JP2016181564A - Thermoelectric conversion module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thermoelectric conversion module with higher reliability.SOLUTION: The thermoelectric conversion module includes: a first insulating substrate provided on a high-temperature side of a plurality of thermoelectric conversion elements; a low-temperature side insulating substrate 24 provided on a low-temperature side of the plurality of thermoelectric conversion elements; a plurality of first electrodes electrically connected to one electrode of the plurality of thermoelectric conversion elements through a bonding material; and a plurality of low-temperature side electrodes 21 electrically connected to the other electrode, which has lower temperature than the one electrode, of the plurality of thermoelectric conversion elements through the bonding material. In addition, a low-temperature side electrode 21a positioned at an end of the outermost column among the plurality of low-temperature side electrodes 21 at a corner part of the low-temperature side insulating substrate 24 is electrically connected through a corner wire 28 to a low-temperature side electrode 21b which is different from the low-temperature side electrode 21c opposite to an end face 21aa of the low-temperature side electrode 21a.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a thermoelectric conversion module that converts heat into electricity.

  As a thermoelectric conversion module, what is used, for example, is attached to the piping of industrial furnaces, such as a blast furnace and an incinerator, and the exhaust pipe of a motor vehicle. The thermoelectric conversion module is often used in a high temperature environment of 200 to 900 ° C. Under such an operating environment of the thermoelectric conversion module, stress is generated in the joint due to the difference in thermal expansion between the thermoelectric conversion element and the electrode at the joint between the thermoelectric conversion element and the electrode, and the joint or the thermoelectric conversion element is destroyed. Is concerned.

  As an example of a junction structure of thermoelectric conversion elements, Japanese Patent No. 3223257 (Patent Document 1) discloses that “P-type thermoelectric semiconductor chips and N-type thermoelectric semiconductor chips are arranged vertically and horizontally between a pair of substrates, and the P-type In a method of manufacturing a thermoelectric conversion module in which thermoelectric semiconductor chips and N-type thermoelectric semiconductor chips are alternately electrically connected to absorb heat on one substrate and generate heat on the other substrate, a pair of P-type thermoelectric semiconductors and A length capable of contacting all or a specific number of leads arranged in parallel on a first substrate having a pattern in which a plurality of leads that conduct electricity to an N-type thermoelectric semiconductor are arranged in parallel at predetermined intervals. The rod-shaped P-type thermoelectric semiconductor and the N-type thermoelectric semiconductor are placed in a state where the P-type thermoelectric semiconductor and the N-type thermoelectric semiconductor are mutually conductive by at least some of the leads, and these When Then, the P-type thermoelectric semiconductor and the N-type thermoelectric semiconductor are electrically separated from each other at the position between the parallel leads, and then each P-type thermoelectric semiconductor chip is connected to the P-type thermoelectric semiconductor chip. A manufacturing method is described in which each lead of the second substrate having a pattern different from the above connecting the N-type thermoelectric semiconductor chip is bonded to the P-type thermoelectric semiconductor chip and the N-type thermoelectric semiconductor chip. FIG. 6 of Patent Document 1 describes a module structure in which electrodes on which a P-type thermoelectric semiconductor and an N-type thermoelectric semiconductor are mounted are connected by wiring thinner than the electrode size.

Japanese Patent No. 3223257

  In the thermoelectric conversion module described in Japanese Patent No. 3223257 (Patent Document 1), stress is concentrated on the corners of the ceramic substrate due to thermal stress. As a result, the wiring at the corner of the ceramic substrate is disconnected, or the thermoelectric conversion element disposed at the corner is damaged. As a result, the reliability of the thermoelectric conversion module decreases.

  Japanese Patent No. 3223257 (Patent Document 1) does not describe any relaxation of stress and strain generated in the element portion. In FIG. 6 of Japanese Patent No. 3223257 (Patent Document 1), wiring for connecting the electrodes diagonally is shown. However, stress on the element portion and stress relaxation on the outer peripheral portion of the module are taken into consideration. Absent. Further, since the wiring is on a diagonal line in the electrode, stress concentration on the element corner is inevitable.

  In an environment where the temperature difference during operation / non-operation of an automobile or the like is large, it is essential to reduce thermal stress generated between the electrode and the element.

  The objective of this invention is providing the technique which improves the reliability of a thermoelectric conversion module.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.

  The thermoelectric conversion module according to the present invention is a thermoelectric conversion module in which a P-type thermoelectric element and an N-type thermoelectric element are connected to an insulating substrate, and the insulating substrate includes the P-type thermoelectric element and An electrode member to which any one of the N-type thermoelectric elements is connected is disposed, and one surface of the P-type thermoelectric element is connected to one electrode member, and one of the N-type thermoelectric elements is connected. The one electrode member is connected to another electrode member different from the one electrode member, and the one electrode member and the other electrode member are connected via a wiring, and the one electrode An electrode member adjacent in the horizontal direction of the member and adjacent to the other electrode member in the vertical direction, and disposed closer to the inner periphery of the insulating substrate than the one electrode member and the other electrode member. Of the wirings, the one electrode part The portion connected to the first electrode member is disposed on an extension line of the one electrode member and the vertical adjacent electrode member adjacent to the vertical direction of the one electrode member, and is connected to the other electrode member. The portion is arranged on an extension line of the other electrode member and a horizontal adjacent electrode member that is adjacent to the other electrode member in the horizontal direction and is different from the vertical adjacent electrode member.

  Another thermoelectric conversion module according to the present invention is a thermoelectric conversion module in which a P-type thermoelectric element and an N-type thermoelectric element are connected to an insulating substrate, and the insulating substrate includes the P-type thermoelectric conversion module. An electrode member to which either one of the thermoelectric element and the N-type thermoelectric element is connected is disposed, and one surface of the P-type thermoelectric element is connected to one electrode member, and the N-type thermoelectric element is connected. One surface of the element is connected to another electrode member different from the one electrode member, and the electrode member is arranged in a grid on the insulating substrate, and the electrode member is arranged in a grid Among these, one electrode member and an electrode member different from the electrode member adjacent to the one electrode member are connected via a wiring, and the wiring is the insulating substrate on which the one electrode member is opposed. Facing the vertical end face of the A boundary surface of the other electrode member facing the opposite end surface in the horizontal direction different from the vertical direction and the horizontal direction end surface facing the other electrode member; Between the two regions.

  Still another thermoelectric conversion module according to the present invention is a thermoelectric conversion module in which a P-type thermoelectric element and an N-type thermoelectric element are connected to an insulating substrate. The insulating substrate includes the P-type thermoelectric conversion module. A plurality of electrode members to which any one of the thermoelectric element and the N-type thermoelectric element is connected, a first electrode member, a second electrode member adjacent to the first electrode member, The third electrode member adjacent to the second electrode member constitutes an L-shape, and the first electrode member is more insulated than the second electrode member and the third electrode member. The third electrode member is disposed at a position closer to the lateral end surface of the insulating substrate than the first electrode member and the second electrode member. The first electrode member and the third electrode member are connected by wiring. And the wiring is opposed to the region formed by the lateral end face and the boundary line of the first electrode member facing the lateral end face, the longitudinal end face, and the longitudinal end face. It is arrange | positioned in the area | region which the boundary line of said 3rd electrode member comprises.

  Of the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  The reliability of the thermoelectric conversion module can be improved.

It is a perspective view which shows an example of the structure of the thermoelectric conversion module in Embodiment 1 of this invention. It is an expanded sectional view which shows the structure cut | disconnected along the AA line of the thermoelectric conversion module shown in FIG. It is a top view which shows an example of the electrode layout of the element joint surface on the high temperature side insulating board | substrate of the thermoelectric conversion module of Example 1 in embodiment of this invention. It is a top view which shows an example of the electrode layout of the element joint surface on the low temperature side insulating substrate of the thermoelectric conversion module of Example 1 in embodiment of this invention. It is the elements on larger scale which extracted the example of the wiring shape by the side of the high temperature joining of the board | substrate corner | angular part of the thermoelectric conversion module of Example 1 in embodiment of this invention. It is a top view which shows the electrode layout of the element joint surface on the high temperature side insulating board | substrate of the thermoelectric conversion module of the modification in embodiment of this invention. It is a top view which shows the electrode layout of the element joint surface on the low temperature side insulating board | substrate of the thermoelectric conversion module of the modification in embodiment of this invention. It is a perspective view which shows the structure of the thermoelectric conversion module of a comparative example. It is an enlarged plan view which shows the structure of the electrode of the thermoelectric conversion module shown in FIG. It is an enlarged plan view which shows the structure of the electrode of the thermoelectric conversion module of the modification in embodiment of this invention. It is an expanded sectional view which shows the structure of the thermoelectric conversion module of the modification in embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted.

  Further, in the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments, but they are not irrelevant to each other unless otherwise specified. The other part or all of the modifications, details, supplementary explanations, and the like are related.

  Also, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), particularly when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and it may be more or less than the specific number.

  Further, in the following embodiments, the constituent elements (including element steps) are not necessarily indispensable unless otherwise specified and clearly considered essential in principle. Needless to say.

(Embodiment)
FIG. 1 is a perspective view showing an example of the structure of a thermoelectric conversion module according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a structure cut along the line AA of the thermoelectric conversion module shown in FIG.

  The thermoelectric conversion module 1 of the present embodiment shown in FIG. 1 generates a current by moving electrons by applying a temperature difference to the upper and lower surfaces of each of P-type and N-type semiconductor thermoelectric conversion elements (thermoelectric elements) 11. The Seebeck effect is used. This movement of electrons has a function of converting heat into electricity. FIG. 2 is a cross-sectional view of the thermoelectric conversion module 1 when the upper surface is at a high temperature and the lower surface is at a low temperature. The electric current forms an electric circuit by joining the P-type thermoelectric conversion element 11 and the N-type thermoelectric conversion element 11 in series. The thermoelectric conversion module 1 is configured by arranging the thermoelectric conversion elements 11 connected in series in this manner in a planar shape (lattice shape), a line shape, a cylindrical shape, or the like.

  Further, the configuration of the thermoelectric conversion module 1 will be described in detail. A high temperature side insulating substrate (first insulating substrate) 25 disposed on each high temperature side (upper surface side, one electrode 11a side) of the plurality of thermoelectric conversion elements 11; A low temperature side insulating substrate (second insulating substrate) 24 disposed on each low temperature side (lower surface side, other electrode 11b side) of the plurality of thermoelectric conversion elements 11. Each thermoelectric conversion element 11 has the other electrode 11b (low temperature side) at a position opposite to one electrode 11a (high temperature side).

  A plurality of high temperatures electrically connected to one electrode 11 a of each of the plurality of thermoelectric conversion elements 11 via the bonding material 30 are formed on the electrode forming surface (lower surface) 25 a of the high temperature side insulating substrate 25. A side electrode (first electrode) 22 is formed.

  In addition, a plurality of low temperature sides electrically connected to the other electrodes 11b of the plurality of thermoelectric conversion elements 11 via the bonding material 30 are formed on the electrode forming surface (upper surface) 24a of the low temperature side insulating substrate 24. An electrode (second electrode) 21 is formed.

  A plurality of P-type and N-type semiconductor thermoelectric conversion elements 11 are alternately electrically connected in series between the high-temperature side insulating substrate 25 and the low-temperature side insulating substrate 24 as shown in FIG. Yes. In other words, a plurality of thermoelectric conversion elements 11 of P-type and N-type semiconductors are alternately connected in series like a single stroke (continuous).

  And these several thermoelectric conversion elements 11 are arrange | positioned at the grid | lattice form, as shown in FIG. Further, as shown in FIGS. 3 and 4, each of the plurality of high-temperature side electrodes 22 and the plurality of low-temperature side electrodes 21 corresponds to the plurality of thermoelectric conversion elements 11 arranged in a lattice pattern. 25 and the low temperature side insulating substrate 24 are arranged in a grid pattern.

  Therefore, the plurality of P-type and N-type thermoelectric conversion elements 11 are aligned and joined in a lattice pattern, and the plurality of P-type and N-type thermoelectric conversion elements 11 are connected to the high temperature side electrode 22 and the low temperature side electrode 21. Are electrically connected in series. Thus, by arranging the thermoelectric conversion elements 11 in a lattice shape, the required area of the substrate can be kept to a minimum, and the thermoelectric conversion module 1 can be miniaturized.

  The thermoelectric conversion element 11 differs in the optimum material depending on the environmental temperature in which the module is used. Examples include silicon-germanium, iron-silicon, bismuth-tellurium, magnesium-silicon, lead-tellurium, cobalt-antimony, bismuth-antimony, Heusler alloy, and half-Heusler alloy. The thermoelectric conversion element 11 is preferably made of any combination of these materials.

  Further, as described above, in the thermoelectric conversion module 1, since it is necessary to make a temperature difference between the upper and lower surfaces of the thermoelectric conversion element 11, the thermoelectric conversion element 11 has an element and an electrode due to a thermal load at the time of joining and a temperature change at the time of operation. It is conceivable that the stress concentrates on the joint portion of this, particularly the joint portion on the high temperature side. That is, a stress is generated at the junction between the element and the electrode, and if this stress exceeds the fracture stress of the element or the junction, a crack occurs at the element or the junction. As a result, there arises a problem that the reliability of bonding between the element and the electrode is greatly lowered and the reliability of the thermoelectric conversion module is lowered.

  For this reason, hard solder, solder, soft solder or the like is often used as a joining material for joining the thermoelectric conversion element 11 and the electrode. For example, in the case of a hard solder, the bonding temperature is as high as 600 to 800 ° C., and a structure that reduces the stress generated in the bonded portion during the cooling process of the bonding process is required. On the other hand, in the case of soft solder, since the joining temperature is 300 ° C. or lower, the stress of the joining process can be reduced as compared with hard solder, but since the melting point is 300 ° C. or lower, the use is limited to low-temperature thermoelectric conversion modules.

  In addition, the low-temperature side insulating substrate 24 and the high-temperature side insulating substrate 25 in the thermoelectric conversion module 1 are suitably made of an insulating material made of ceramic such as alumina, silicon nitride, or silicon nitride, or a resin such as a printed board or a flexible board. . Furthermore, the smaller the difference between the linear expansion coefficient of the low-temperature side insulating substrate 24 and the linear expansion coefficient of the high-temperature side insulating substrate 25 is, the smaller the stress generated at the junction with the element and the entire module is reduced, and the module warpage is suppressed. Therefore, the same material is desirable.

  Moreover, in the thermoelectric conversion module 1 of this Embodiment, as shown in FIG.1 and FIG.2, several high temperature side electrode 22 mentioned later is provided in the surface 25b on the opposite side to the electrode formation surface 25a of the high temperature side insulating substrate 25. A high-temperature side conductor pattern 27 which is a conductor pattern having the same size and the same arrangement is formed. Similarly, on the surface 24b opposite to the electrode forming surface 24a of the low temperature side insulating substrate 24, a low temperature side conductor pattern 26 which is the same size and the same arrangement as a plurality of low temperature side electrodes 21 described later is formed. ing.

  The low temperature side electrode 21 and the low temperature side conductor pattern 26 formed on the low temperature side insulating substrate 24 and the high temperature side electrode 22 and the high temperature side conductor pattern 27 formed on the high temperature side insulating substrate 25 are nickel, molybdenum, titanium, iron, copper, It is desirable to use manganese, tungsten, or an alloy containing either of these metals as a main component. In particular, if the linear expansion coefficient of the material of the thermoelectric conversion element 11 and the linear expansion coefficient of the electrode are different, stress is generated in the joint and the element when a temperature change occurs.

  Therefore, for the purpose of reducing the stress applied to the joint and the element, it is possible to improve the joint reliability by selecting a material having a smaller linear expansion coefficient difference from that of the thermoelectric conversion element 11 as the electrode. Furthermore, by making the conductor pattern of the low temperature side electrode 21 and the low temperature side conductor pattern 26 the same, it is possible to suppress the warp that occurs when the temperature of the low temperature side insulating substrate 24 changes.

  On the other hand, the same applies to the high temperature side electrode 22 on the electrode forming surface 25a of the high temperature side insulating substrate 25 and the high temperature side conductor pattern 27 on the surface 25b. That is, by making the high-temperature side electrode 22 and the high-temperature side conductor pattern 27 the same conductor pattern, it is possible to suppress warping that occurs when the temperature of the high-temperature side insulating substrate 25 changes.

  Further, the bonding material 30 is a hard solder or a solder, but finely, aluminum, nickel, tin, copper, zinc, germanium, magnesium, gold, silver, indium, lead, bismuth, tellurium, or any of these metals It is desirable that the alloy is mainly composed of either one.

  The linear expansion coefficient of a silicon-germanium element as an example of the thermoelectric conversion element 11 is 4.5 ppm / ° C., and the linear expansion coefficient of the silicon-magnesium element is 15.5 ppm / ° C. Then, the linear expansion coefficient of the thermoelectric conversion element 11 is described as α ppm / ° C. Similarly, the materials of the low temperature side electrode 21 and the high temperature side electrode 22 include molybdenum (linear expansion coefficient 5.8 ppm / ° C.), nickel (linear expansion coefficient 15.2 ppm / ° C.), and the like in the first embodiment. It is described as a composite material having a linear expansion coefficient β ppm / ° C. including an insulating substrate and electrodes.

  Next, the assembly method of the thermoelectric conversion module 1 of this Embodiment is demonstrated.

  First, as shown in FIG. 2, a plurality of low temperature side electrodes 21 are formed on the electrode forming surface 24a, while a plurality of low temperature side conductor patterns 26 are formed on the surface 24b opposite to the electrode forming surface 24a. An insulating substrate 24 is disposed.

  After the arrangement, the bonding material 30 is arranged on each low temperature side electrode 21. The bonding material 30 is, for example, a hard solder, and the hard solder is transferred onto the low temperature side electrode 21 by printing.

  Next, the thermoelectric conversion elements 11 are alternately arranged in a P-type and an N-type on the transferred hard solder.

  After the arrangement, a printing mask having an opening corresponding to the element is arranged on the element. At this time, a printing mask is arranged so that the opening is located above the element. Then, a hard solder is printed on the element using a printing mask.

  After printing, the high temperature side insulating substrate 25 is arranged on the element through the hard solder by aligning each of the plurality of hard solders and the position of the high temperature side electrode 22.

  Thus, as shown in FIG. 2, a bonding material is provided between the high temperature side insulating substrate 25 on which the plurality of high temperature side electrodes 22 are formed and the low temperature side insulating substrate 24 on which the plurality of low temperature side electrodes 21 are formed. The plurality of thermoelectric conversion elements 11 are arranged via 30.

  In this state, the bonding material 30 is heated through the assembly in a high-temperature furnace. Then, by this heating, the bonding material 30 is melted, and one electrode (high temperature side) 11 a of each of the plurality of thermoelectric conversion elements 11 and the plurality of high temperature side electrodes 22 are electrically connected via the bonding material 30. . Further, the other electrode (low temperature side) 11 b of each of the plurality of thermoelectric conversion elements 11 and the plurality of low temperature side electrodes 21 are electrically connected through the bonding material 30.

  Thereby, the thermoelectric conversion module 1 in which the P-type and N-type thermoelectric conversion elements 11 are electrically connected alternately via the plurality of high temperature side electrodes 22 and the low temperature side electrodes 21 can be assembled.

<Example 1>
FIG. 3 is a plan view showing an example of the electrode layout of the element bonding surface on the high temperature side insulating substrate of the thermoelectric conversion module of Example 1 according to the embodiment of the present invention, and FIG. 4 is Example 1 according to the embodiment of the present invention. The top view which shows an example of the electrode layout of the element joint surface on the low temperature side insulation board | substrate of the thermoelectric conversion module of FIG. 5, FIG. 5 is an example of the wiring shape by the side of the high temperature junction of the thermoelectric conversion module of Example 1 in embodiment of this invention FIG.

  In the thermoelectric conversion module of the first embodiment, a countermeasure against stress is applied to a corner portion (corner portion) of a substrate (either the high temperature side insulating substrate 25 or the low temperature side insulating substrate 24). That is, in the above-described embodiment, the structure in which the thermoelectric conversion element 11 is arranged also in the module corner as shown in FIG. It is considered that stress tends to concentrate on the module corner portion, and the module corner portion is a place where the stress tends to increase.

  Therefore, in the first embodiment, as shown in FIG. 3, the thermoelectric conversion element 11 shown in FIG. 1 is not arranged at the corner (corner) of the thermoelectric conversion module, and the corner wiring ( The first wiring) 28 is formed and connected.

  In the first embodiment, the case where the corner wiring 28 is formed at the corner portion of the low temperature side insulating substrate 24 among the high temperature side and low temperature side substrates will be described. It may be formed in the part.

  As shown in FIG. 4, a low temperature side electrode (first electrode) disposed at an end of a plurality of low temperature side electrodes 21 at a corner portion of the low temperature side insulating substrate 24 opposite to the corner portion where the lead wiring 23 is provided. 3 electrodes) 21a (P: one electrode member) and a low temperature side electrode (fourth electrode) 21b (Q: another electrode member) different from the low temperature side electrode 21c facing the end surface 21aa of the low temperature side electrode 21a. These are electrically connected via a corner wiring (first wiring) 28. One surface of the P-type thermoelectric element is connected to the low-temperature side electrode (P: one electrode member, third electrode) 21a, and one surface of the N-type thermoelectric element is connected to the low-temperature side electrode (P: It is connected to a low temperature side electrode (Q: another electrode member, fourth electrode) 21b different from one electrode member, third electrode) 21a. Here, the low temperature side electrode 21a and the low temperature side electrode 21b may be arranged so that they are interchanged (hereinafter the same).

  The low temperature side insulating substrate 24 is adjacent to the horizontal direction X of the low temperature side electrode (P: one electrode member, third electrode) 21a, and the low temperature side electrode (Q: other electrode member, fourth electrode) 21b. Is provided with a low temperature side electrode (R: adjacent electrode member) 21c adjacent in the vertical direction Y. The low temperature side electrode (R: adjacent electrode member) 21c is more than the low temperature side electrode (P: one electrode member, third electrode) 21a and the low temperature side electrode (Q: other electrode member, fourth electrode) 21b. It is arranged on the inner peripheral side of the low temperature side insulating substrate 24.

  In the corner wiring 28, a portion connected to the low temperature side electrode (P: one electrode member, third electrode) 21 a is connected to the low temperature side electrode (P: one electrode member, third electrode) 21 a and the low temperature side electrode (P: one electrode member, third electrode) 21 a. The side electrode (P: one electrode member, the third electrode) 21a is arranged on an extension line of the low temperature side electrode (S: vertical direction adjacent electrode member) 21 adjacent to the vertical direction Y of the side electrode 21a. On the other hand, the portions connected to the low temperature side electrode (Q: other electrode member, fourth electrode) 21b are the low temperature side electrode (Q: other electrode member, fourth electrode) 21b and the low temperature side electrode (Q: other). On the extension line of the low temperature side electrode (horizontal adjacent electrode member) T different from the low temperature side electrode (S: vertical adjacent electrode member) 21 adjacent to the horizontal direction X of the electrode member, the fourth electrode) 21b. Has been placed.

  In the low temperature side insulating substrate 24, the low temperature side electrode (P: one electrode member, third electrode) 21 a and the low temperature side electrode (S: vertical adjacent electrode member) 21 are arranged in the vertical direction Y of the low temperature side insulating substrate 24. This is an electrode member adjacent to the end face U of the electrode. On the other hand, the low temperature side electrode (Q: other electrode member, fourth electrode) 21b and the low temperature side electrode (horizontal adjacent electrode member) T are adjacent to the end surface V in the horizontal direction X different from the end surface U in the vertical direction Y. It is a suitable electrode member.

  Further, in the corner wiring 28, the portion connected to the low temperature side electrode (P: one electrode member, the third electrode) 21 a includes the end face V in the horizontal direction X of the low temperature side insulating substrate 24 and the low temperature side electrode (P: One electrode member, the third electrode) 21a is disposed between the regions constituted by the boundary line P1 facing the horizontal direction X. On the other hand, the portion connected to the low temperature side electrode (Q: other electrode member, fourth electrode) 21b of the corner wiring 28 is the end face U in the vertical direction Y of the low temperature side insulating substrate 24 and the low temperature side electrode (Q: other). Electrode member, the fourth electrode) 21b is disposed between the regions constituted by the boundary line Q1 facing the vertical direction Y.

  Further, in the corner wiring 28, the connection portion with the low temperature side electrode (P: one electrode member, third electrode) 21 a is connected to the end surface V in the horizontal direction X of the low temperature side insulating substrate 24 and the low temperature side electrode (P: One electrode member, the third electrode) 21a is disposed between the boundary surface (boundary line P1) and the boundary line P1 facing the end surface V in the horizontal direction X. On the other hand, in the corner wiring 28, the connection portion with the low temperature side electrode (Q: other electrode member, fourth electrode) 21 b is connected to the end face U in the vertical direction Y of the low temperature side insulating substrate 24 and the low temperature side electrode (Q: Of the boundary surface (boundary line Q1) of the other electrode member (fourth electrode) 21b, it is disposed between the boundary line Q1 facing the end surface U in the vertical direction Y.

  In other words, the corner wiring 28 is located on the low temperature side facing the end surface U in the vertical direction Y and the end surface U in the vertical direction Y of the low temperature side insulating substrate 24 facing the low temperature side electrode (P: one electrode member, third electrode) 21a. A region formed by the boundary surface (boundary line P1) of the electrode (P: one electrode member, the third electrode) 21a and the low-temperature side electrode (Q: another electrode member, the fourth electrode) 21b face each other. A region constituted by an end surface V in the horizontal direction X different from the direction Y and a boundary surface (boundary line Q1) of the low-temperature side electrode (Q: other electrode member, fourth electrode) 21b facing the end surface V in the horizontal direction X; , Is placed between.

  The corner wiring 28 is adjacent to the low temperature side electrode (P: one electrode member, third electrode) 21a in the lateral direction (horizontal direction X), and further, the low temperature side electrode (Q: other electrode member, fourth electrode). ) 21b and the low temperature side electrode (adjacent electrode member) R adjacent in the vertical direction (vertical direction Y) passes through different positions.

  In other words, in the low temperature side insulating substrate 24, the first electrode member P, the second electrode member R adjacent to the first electrode member P, and the second electrode member R are adjacent to each other. The third electrode member Q forms an L shape in the arrangement in plan view.

  And the 1st electrode member P is arrange | positioned in the position near the end surface U of the vertical direction (vertical direction Y) of the low temperature side insulating substrate 24 rather than the 2nd electrode member R and the 3rd electrode member Q. On the other hand, the third electrode member Q is disposed closer to the end face V in the lateral direction (horizontal direction X) of the low temperature side insulating substrate 24 than the first electrode member P and the second electrode member R. Yes. Further, the first electrode member P and the third electrode member Q are connected by a corner wiring 28.

  The corner wiring 28 includes a region formed by a boundary line P1 of the first electrode member P facing the end face V in the horizontal direction (horizontal direction X) and the end face V in the horizontal direction (horizontal direction X), and the vertical direction. It is arranged in a region formed by an end face U in the (vertical direction Y) and a boundary line Q1 of the third electrode member Q facing the end face U in the vertical direction (vertical direction Y).

  More specifically, among the electrode rows of the plurality of low temperature side electrodes 21 arranged in a lattice pattern on the low temperature side insulating substrate 24, the low temperature side electrode 21a at the end of the outermost row faces the end surface 21aa. Unlike the low temperature side electrode 21c, the low temperature side electrode 21b at the end of the column outside the column of the low temperature side electrode 21c and the low temperature side electrode 21a are electrically connected by the corner wiring 28. The end surface 21aa of the low temperature side electrode 21a is a surface located on the inner side of two opposing end surfaces in the direction along the electrode connection direction including the low temperature side electrode 21a.

  In other words, among the electrode rows of the plurality of low temperature side electrodes 21 arranged in a grid pattern, the low temperature side electrode 21a at the end of the outermost row and the plurality of electrode rows intersecting with this row are arranged. Among them, the low temperature side electrode 21b at the position of the end of the outermost electrode row is electrically connected by the corner wiring 28 formed in the corner portion of the substrate. Note that the corner wiring 28 has a width narrower than the width of the electrode, and as in the first embodiment, relieves stress and strain generated in the element and in the joint, and cracks in the element and breakage of the joint. Can be suppressed.

  As described above, the thermoelectric conversion element 11 is not disposed at the corner portion of the module, but the corner wiring 28 is provided at the corner portion, and the low-temperature side electrode 21a and the low-temperature side electrode 21b at the end of the electrode row are respectively connected to the corner wiring 28. As a result of the connection, the maximum stress value generated in the thermoelectric conversion element 11 in the module can be reduced, and the bonding reliability of the bonding portion between the element and the electrode can be improved.

  As a result, similarly to the thermoelectric conversion module 1 of the embodiment, the reliability can be improved also in the thermoelectric conversion module of the first embodiment.

  Even when the thermoelectric conversion element layout of Example 1 is used, the thermoelectric conversion module of Example 1 can be manufactured using an assembly process similar to the assembly process described in the above embodiment (this embodiment). There is no process (step) newly required by the thermoelectric conversion element layout of Example 1).

  The shape of the corner wiring 28 is preferably an arc as shown in FIG. In other words, it is preferable that the planar shape (the shape viewed from above) of the corner wiring 28 is an arc shape. By making the arc shape, stress concentration in the wiring in the corner wiring 28 can be reduced. As a result, disconnection of the corner wiring 28 can be reduced.

  Note that the electrode and wiring forming method of the first embodiment, that is, the method of forming the low temperature side electrode 21a, the low temperature side electrode 21b, the low temperature side electrode 21c, and the corner wiring 28 on the low temperature side insulating substrate 24 is modified as described later. This is the same as the electrode and wiring formation method described above, in which a metal is bonded to the entire surface of the low temperature side insulating substrate 24 and then patterned by etching. In this etching step, patterning is performed by masking a portion where the metal is to remain, as in the electrode and wiring formation method of the modification described later. Thus, by using a mask for connecting with the corner wiring 28, the corner wiring 28 having a width smaller than the width of the electrode can be formed in the corner portion of the substrate.

<Modification>
Next, the electrode shape and wiring shape of the modification of the thermoelectric conversion module 1 of this Embodiment are demonstrated in detail.

  FIG. 6 is a plan view showing an electrode layout of an element bonding surface on a high temperature side insulating substrate of a thermoelectric conversion module according to a modification of the embodiment of the present invention, and FIG. 7 is a low temperature side of the thermoelectric conversion module according to the embodiment of the present invention. It is a top view which shows the electrode layout of the element joint surface on an insulated substrate.

  8 is a perspective view showing the structure of the thermoelectric conversion module of the comparative example, FIG. 9 is an enlarged plan view showing the structure of the electrodes of the thermoelectric conversion module shown in FIG. 8, and FIG. 10 is the thermoelectric according to Embodiment 1 of the present invention. It is an enlarged plan view which shows the structure of the electrode of a conversion module.

  In the thermoelectric conversion module 1 of this modification, as shown in FIG. 6 and FIG. 7, a high temperature side inter-electrode wiring (second wiring) 221 that connects the high temperature side electrodes 22 and a low temperature that connects the low temperature side electrodes 21. The inter-electrode wiring (second wiring) 211 is thinner than the high temperature side electrode 22 and the low temperature side electrode 21.

  In other words, each of the plurality of high temperature side electrodes 22 and the low temperature side electrode 21 is configured such that the electrodes adjacent to each other along the connection direction S of the plurality of thermoelectric conversion elements 11 are the second wiring (high temperature side inter-electrode wiring 221, low temperature side electrode). They are electrically connected by the inter-wiring 211). The width of each of the high temperature side interelectrode wiring 221 and the low temperature side interelectrode wiring 211 is formed to be narrower than the width of each of the high temperature side electrode 22 and the low temperature side electrode 21 in the same direction as this width.

  That is, in two adjacent high temperature side electrodes 22 and low temperature side electrodes 21 connected by the high temperature side interelectrode wiring 221 or the low temperature side interelectrode wiring 211, the width in the direction intersecting the connection direction S is the high temperature side electrode. The respective widths of the high-temperature side inter-electrode wiring 221 and the low-temperature side inter-electrode wiring 211 are narrower than the respective widths of the low-temperature side electrode 21 and the low-temperature side electrode 21.

  Here, the reason why the width of each of the high temperature side interelectrode wiring 221 and the low temperature side interelectrode wiring 211 is made narrower than the width of each of the high temperature side electrode 22 and the low temperature side electrode 21 and the size of the width will be described.

  FIG. 8 shows the structure of the thermoelectric conversion module 50 compared and examined by the inventor of the present application. Each of the high temperature side electrode 22 and the low temperature side electrode 21 connecting two adjacent elements with respect to the connection direction S of the thermoelectric conversion element 11. However, as shown in FIG. 9, it is formed in a rectangular shape in plan view (viewed from above).

  Since the thermoelectric conversion module 50 receives heat from the high temperature side, the high temperature side thermoelectric conversion element 11, the high temperature side insulating substrate 25, the high temperature side electrode 22, and the high temperature side conductor pattern 27 (see FIG. 2) are elongated as the temperature rises. Occurs. As shown in FIG. 9, the length that the thermoelectric conversion module 50 and the high temperature side electrode 22 extend when the temperature rises is represented by L as the distance from the center C1 of the high temperature side electrode 22 to the corner C2 of the element bonding region 40. Then, α (thermal expansion coefficient) × ΔT × L and β (thermal expansion coefficient) × ΔT × L, respectively. The center C1 of the high temperature side electrode 22 is, for example, the intersection of two diagonal lines in the rectangular high temperature side electrode 22. ΔT is the elongation of the electrode. | (Α−β) × ΔT × L |, which is a difference in elongation between the element and the electrode, causes a stress to be generated in the joint and the element. Since the material and use environment temperature of the thermoelectric conversion element 11 are determined by the target product, α, β, and ΔT are determined by the product.

  Therefore, in order to reduce the stress generated due to the high temperature side electrode 22, it is effective to shorten the distance L.

  Specifically, in the case of a structure in which the P-type thermoelectric conversion element D and the N-type thermoelectric conversion element E as shown in FIG. 9 are bonded onto the rectangular high-temperature side electrode 22, L = a. The difference in elongation caused by the stress generated at the corner (corner) of the joint portion of the element where the stress is most concentrated is | (α−β) × ΔT × a |. In other words, the magnitude of stress applied to the joint due to the difference in thermal expansion coefficient between the element and the electrode is proportional to the distance a.

  Therefore, in the thermoelectric conversion module 1 of the present modification, as shown in FIGS. 6, 7, and 10, between the two adjacent high temperature side electrodes 22, the high temperature side having a width L <b> 2 narrower than the width L <b> 1 of the high temperature side electrode 22. By connecting with the inter-electrode wiring (second wiring) 221, the center C1 of expansion and contraction of the high temperature side electrode 22 of FIG. 9 approaches toward the corner (corner portion) C2 of the element junction. As a result, as shown in FIG. 10, the center of expansion and contraction of the high temperature side electrode 22 is C3, and the distance between C1 and C2 in FIG. 9> the distance between C3 and C4 in FIG. Therefore, in the structure of FIG. 10, the difference in elongation between the element and the electrode is | (α−β) × ΔT × b | (where (a in FIG. 9> b in FIG. 10)). Stress to be reduced. Thereby, the joining reliability in a joined part can be improved, and the reliability of the thermoelectric conversion module 1 can be improved.

  On the other hand, since the low temperature side is cooled, the temperature rise is suppressed compared to the high temperature side joint. In this modification, the low temperature side is illustrated with the same connection as the high temperature side in order to suppress warpage, but the low temperature side may not have the structure as illustrated.

  And in order to prevent the crack in a thermoelectric conversion element (P type thermoelectric conversion element D and N type thermoelectric conversion element E of FIG. 10), temperature difference (DELTA) T with use environment temperature, and linear expansion coefficient difference (alpha)-. The distance b (the distance between C3 and C4) in FIG. 10 may be determined so that the stress generated in the element is derived from β and the stress value is smaller than the fracture stress of the thermoelectric conversion element 11. That is, by making the electrode shape such that the distance b shown in FIG. 10 is smaller than the distance a shown in FIG. 9 (the electrode shape is separated for each element), the stress generated at the junction of each element is reduced. Can be reduced.

  As a result, the reliability of the thermoelectric conversion module 1 can be improved.

  The lead wiring 23 shown in FIG. 1 and FIG. 7 takes out the electric power generated in the element to the outside, and may be any conductive material such as copper, copper alloy, aluminum or aluminum alloy, and the low temperature side electrode 21. Any method may be used for the bonding as long as the bonding is maintained in the use environment such as soldering, ultrasonic bonding, diffusion bonding, and conductive paste. Further, in the present embodiment, the lead-out wiring 23 is shown connected to the low temperature side electrode 21, but it may be connected to the high temperature side electrode 22 and electric power may be taken out from the high temperature side.

  Next, an example of a method of forming the low temperature side inter-electrode wiring 211 and the high temperature side inter-electrode wiring 221 of the thermoelectric conversion module 1 of the present modification will be described below using the low temperature side insulating substrate 24 and the high temperature side insulating substrate 25 as ceramic substrates. .

  An electrode forming method of a ceramic substrate (low temperature side insulating substrate 24, high temperature side insulating substrate 25) having metal wiring (conductor pattern) formed on the front and back is a method of patterning by etching after bonding a metal to the entire surface of the ceramic substrate. Is the mainstream. In this etching step, patterning is performed by masking the portion where the metal is to remain, and by using a mask for connecting the electrodes with fine wiring, the width L2 in FIGS. A narrow wiring pattern as shown in the pattern can be formed.

  Thus, formation of the low temperature side interelectrode wiring 211 and the high temperature side interelectrode wiring 221 can be realized without adding a new wiring formation process. Note that the width L2 of the inter-electrode wiring shown in FIG. 10 is set to 0.05 mm ≦ L2 ≦ 0 with respect to the electrode width L1 in order to set the expansion / contraction reference point (C3 in FIG. 10) immediately below the element junction. .5 × L1 is desirable. Alternatively, the width L2 is desirably 1% to 50% of the width L1.

  The above 0.05 mm is a numerical value based on the fact that the minimum value capable of forming the wiring width of the etching processing technique is 0.05 mm, for example, when the thickness of the electrode is 0.3 mm. In addition, the above 0.5 × L1 is considered that the width of L2, which has little influence for separating the heat shrinkage of the electrode into two electrode pattern regions as shown in FIG. 10, is less than half of L1, Accordingly, the width L2 is desirably 0.05 mm ≦ L2 ≦ 0.5 × L1.

  The thermoelectric conversion module 1 assembled in the present embodiment may be used by being enclosed in a case, or may be used with the structure shown in FIG. In the structure shown in FIG. 1, the thermoelectric conversion elements 11 are alternately connected to the low temperature side electrodes 21 and the high temperature side electrodes 22 (see FIG. 2), and are further electrically connected in series. A lead wire 23 is connected to the electrodes at both ends of the series connection, and an electromotive force is taken out from the electrodes at both ends via the lead wire 23. Moreover, in the thermoelectric conversion module 1 shown in FIG. 1, although the thermoelectric conversion element 11 is represented as a square pole, the shape of the thermoelectric conversion element 11 is not restricted to a square pole, a triangular prism, a polygonal cylinder, a cylinder, an elliptical cylinder, etc. A columnar shape is preferable.

  In the thermoelectric conversion module 1, as shown in FIGS. 6 and 7, a high temperature side inter-electrode wiring (second wiring) 221 that connects the high temperature side electrodes 22 and a low temperature side electrode that connects the low temperature side electrodes 21 to each other. The inter-layer wiring (second wiring) 211 is a wiring that is narrower than the high temperature side electrode 22 and the low temperature side electrode 21.

  That is, in two adjacent high temperature side electrodes 22 and low temperature side electrodes 21 connected by the high temperature side interelectrode wiring 221 or the low temperature side interelectrode wiring 211, the width in the direction intersecting the connection direction S is the high temperature side electrode. The respective widths of the high-temperature side inter-electrode wiring 221 and the low-temperature side inter-electrode wiring 211 are narrower than the respective widths of the low-temperature side electrode 21 and the low-temperature side electrode 21.

  The high temperature side electrode 22, the low temperature side electrode 21, the high temperature side interelectrode wiring 221 and the low temperature side interelectrode wiring 211 are etched after bonding a metal to the low temperature side insulating substrate 24 and the high temperature side insulating substrate 25, respectively. It is formed by patterning. In this etching process, the portion where the metal is desired to remain is masked to perform patterning. Therefore, by using a mask for connecting the electrodes with thin wires, the high temperature side inter-electrode wires 221 and the low temperature side inter-electrode wires 211 are used. This pattern can be a narrow wiring pattern.

  According to the thermoelectric conversion module 1 and the method of manufacturing the same of the present embodiment, the inter-electrode wiring that connects the electrode joined to the P-type thermoelectric conversion element 11 and the electrode joined to the N-type thermoelectric conversion element 11 ( The width of the electrode where the second wiring, the high temperature side inter-electrode wiring 221 and the low temperature side inter-electrode wiring 211) are joined to the P-type thermoelectric conversion element 11 or the width of the electrode joined to the N-type thermoelectric conversion element 11 It is thinner than. By adopting such a structure, it is possible to suppress thermal stress generated between the thermoelectric element and the electrode even in a high temperature environment or a temperature fluctuation environment, and to ensure high reliability even in an actual use environment.

  In other words, by reducing the width of the inter-electrode wiring connecting the electrodes to be smaller than the width of the electrodes, the stress and strain generated in the element and the junction at the junction between the element and the electrode where stress is concentrated are alleviated. Cracks and breakage of the joint can be suppressed. As a result, the reliability of the thermoelectric conversion module 1 can be improved.

  Therefore, the thermoelectric conversion module 1 according to the present embodiment can be used for power generation under a high-temperature environment, for example, by being attached to a piping of an industrial furnace such as a blast furnace or an incinerator or an exhaust pipe of an automobile.

  Next, FIG. 11 is sectional drawing which shows the structure of the thermoelectric conversion module of the modification in embodiment of this invention.

  The thermoelectric conversion module of the modification shown in FIG. 11 is configured such that the thickness of the high-temperature side inter-electrode wiring (second wiring) 221 or the low-temperature side inter-electrode wiring (second wiring) 211 that connects the electrodes is the electrode (high-temperature side electrode). 22 or the low temperature side electrode 21).

  That is, in the modification shown in FIG. 11, the low temperature side interelectrode wiring 211 and the high temperature side interelectrode wiring 221 are made thinner than the low temperature side electrode 21 and the high temperature side electrode 22 in the first embodiment (FIG. 3). The same effect as 5) and the modified examples (FIGS. 6 to 10) can be obtained.

  As shown in FIG. 11, the thickness D1 of each of the low temperature side interelectrode wiring 211 and the high temperature side interelectrode wiring 221 is half (1/2) of the thickness D2 of the low temperature side electrode 21 and the high temperature side electrode 22. The following is desirable. Alternatively, the thickness D1 is desirably 1% to 50% of the thickness D2.

  This is for concentrating the stress applied to the electrodes on a portion of the high temperature side electrode 22 or the low temperature side electrode 21 that is thicker than the thickness of the high temperature side interelectrode wiring 221 or the low temperature side interelectrode wiring 211. In other words, the thickness of the wiring connecting the electrodes (second wiring) is set to 1/2 or less (preferably 1% to 50%) of the thickness of the electrodes, so that the electrode shape is separated for each element. It is possible to reduce the stress generated at the joint portion of each element.

  In the modification shown in FIG. 11, it is not always necessary to make the wiring width L2 narrower than the electrode width L1 as in the first embodiment (FIGS. 3 to 5) and the modification (FIGS. 6 to 10). Since the high temperature side inter-electrode wiring 221 and the low temperature side inter-electrode wiring 211 have a horizontally long cross-sectional shape, the cross-sectional area in the vertical direction of the inter-electrode wiring can be increased. Therefore, in the thermoelectric conversion module 1 of the modification shown in FIG. 11, in addition to the effects of the first embodiment (FIGS. 3 to 5) and the modification (FIGS. 6 to 10), the inter-electrode wiring (high-temperature side inter-electrode wiring 221, low temperature Since the cross-sectional area of the inter-electrode wiring 211) can be increased, a larger amount of current can flow.

  And even if it is a case where the shape of the wiring between electrodes is made into the wiring between electrodes which made the thickness of the modification shown in FIG. 11 thin, the electrode on an insulating substrate by the process shown in the modification (FIGS. 6-10) The inter-wiring can be formed, and there is no new process (process) required.

  In addition, the formation method of the electrode and interelectrode wiring of the modification shown in FIG. 11, ie, the formation method of the low temperature side electrode 21a, the low temperature side electrode 21b, the low temperature side electrode 21c, and the low temperature side interelectrode wiring 211 in the low temperature side insulating substrate 24. Is similar to the modification (FIGS. 6 to 10), and is formed by patterning by etching after bonding a metal to the entire surface of the low-temperature side insulating substrate 24. In the etching process at this time, patterning is performed by masking a portion where the metal is to remain as in the modification (FIGS. 6 to 10). Thus, by using a mask for connecting the electrodes with a thin wiring, the pattern of the low temperature side inter-electrode wiring 211 and the high temperature side inter-electrode wiring 221 can be a thin wiring pattern. Is possible.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments of the invention. However, the present invention is not limited to the embodiments of the invention, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.

  In addition, this invention is not limited to above-described embodiment, Various modifications are included. For example, the above-described embodiment has been described in detail for easy understanding of the present invention, and is not necessarily limited to one having all the configurations described.

  Further, a part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment. . In addition, it is possible to add, delete, and replace other configurations for a part of the configuration of each embodiment. In addition, each member and relative size which were described in drawing are simplified and idealized in order to demonstrate this invention clearly, and it becomes a more complicated shape on mounting.

  Further, in the modification shown in FIGS. 6 to 10, a plurality of high temperature sides having the same shape as the high temperature side electrode 22 and the low temperature side electrode 21 are provided on the surfaces 25 b and 24 b of the high temperature side insulating substrate 25 and the low temperature side insulating substrate 24, respectively. Although the case where the conductor pattern 27 and the low temperature side conductor pattern 26 were formed was demonstrated, the said high temperature side conductor pattern 27 and the low temperature side conductor pattern 26 do not necessarily need to be formed.

DESCRIPTION OF SYMBOLS 1 Thermoelectric conversion module 11 Thermoelectric conversion element 21 Low temperature side electrode (2nd electrode)
21a End face 21b, 21c Low temperature side electrode 21aa Low temperature side electrode 22 High temperature side electrode (1st electrode)
24 Low temperature side insulating substrate (second insulating substrate)
25 High temperature side insulating substrate (first insulating substrate)
28 Corner wiring (first wiring)
211 Low-temperature inter-electrode wiring (second wiring)
221 High-temperature inter-electrode wiring (second wiring)

Claims (15)

A thermoelectric conversion module in which a P-type thermoelectric element and an N-type thermoelectric element are connected to an insulating substrate,
An electrode member to which either one of the P-type thermoelectric element and the N-type thermoelectric element is connected is disposed on the insulating substrate,
One surface of the P-type thermoelectric element is connected to one electrode member, and one surface of the N-type thermoelectric element is connected to another electrode member different from the one electrode member,
The one electrode member and the other electrode member are connected via wiring,
The electrode member adjacent in the horizontal direction of the one electrode member and vertically adjacent to the other electrode member, wherein the inner periphery of the insulating substrate is more than the one electrode member and the other electrode member. Having an adjacent electrode member disposed on the side;
A portion of the wiring connected to the one electrode member is disposed on an extension line of the one electrode member and a vertical adjacent electrode member adjacent to the vertical direction of the one electrode member. The portion connected to the other electrode member is an extension line of the other electrode member and a horizontally adjacent electrode member that is adjacent to the other electrode member in the horizontal direction and is different from the vertically adjacent electrode member. A thermoelectric conversion module, which is arranged in The thermoelectric conversion module according to claim 1,
The one electrode member and the vertical electrode member are electrode members adjacent to a vertical end surface of the insulating substrate,
The other electrode member and the horizontal adjacent electrode member are electrode members adjacent to a horizontal end face different from the vertical end face. The thermoelectric conversion module according to claim 1,
A portion of the wiring connected to the one electrode member is disposed between a region formed by a horizontal end face of the insulating substrate and a boundary line facing the horizontal direction of the one electrode member. ,
A portion of the wiring connected to the other electrode member is disposed between a region constituted by a vertical end face of the insulating substrate and a boundary line of the other electrode member facing the vertical direction. A thermoelectric conversion module characterized by that. The thermoelectric conversion module according to claim 1,
A connection portion with one electrode member of the wiring is disposed between the horizontal end surface of the insulating substrate and a boundary line facing the horizontal end surface of the boundary surface of the one electrode member. Has been
The connection part with the other electrode member of the wiring is arranged between the vertical end surface of the insulating substrate and a boundary line facing the vertical end surface of the boundary surface of the other electrode member. The thermoelectric conversion module characterized by being made. The thermoelectric conversion module according to claim 1,
A thermoelectric conversion module, wherein the wiring has a planar shape formed in an arc shape. The thermoelectric conversion module according to claim 1,
The thermoelectric conversion module according to claim 1, wherein a thickness of the wiring is thinner than a thickness of the one electrode member. The thermoelectric conversion module according to claim 1,
The P-type thermoelectric element and the N-type thermoelectric element are configured in a columnar shape. The thermoelectric conversion module according to claim 1,
The P-type thermoelectric element and the N-type thermoelectric element are silicon-germanium-based, iron-silicon-based, bismuth-tellurium-based, magnesium-silicon-based, lead-tellurium-based, cobalt-antimony-based, bismuth-antimony-based. Alternatively, a thermoelectric conversion module comprising any combination of Heusler alloy-based and half-Heusler alloy-based materials. The thermoelectric conversion module according to claim 1,
2. The thermoelectric conversion module according to claim 1, wherein the wiring is constituted by a line thinner than the length of one side of the one electrode member. A thermoelectric conversion module in which a P-type thermoelectric element and an N-type thermoelectric element are connected to an insulating substrate,
An electrode member to which either one of the P-type thermoelectric element and the N-type thermoelectric element is connected is disposed on the insulating substrate,
One surface of the P-type thermoelectric element is connected to one electrode member, and one surface of the N-type thermoelectric element is connected to another electrode member different from the one electrode member,
The electrode members are arranged in a grid pattern on the insulating substrate,
Among the electrode members arranged in a lattice shape, one electrode member and an electrode member different from the electrode member adjacent to the one electrode member are connected via wiring,
The wiring includes a region constituted by a vertical end surface of the insulating substrate facing the one electrode member and a boundary surface of the one electrode member facing the vertical end surface, and the other electrode member A thermoelectric conversion module, which is disposed between an opposing end surface in a horizontal direction different from the vertical direction and a region formed by a boundary surface of the other electrode member facing the end surface in the horizontal direction. . In the thermoelectric conversion module according to claim 10,
The thermoelectric conversion module, wherein the wiring passes at a position different from the adjacent electrode member adjacent to the one electrode member in the horizontal direction and further adjacent to the other electrode member in the vertical direction. In the thermoelectric conversion module according to claim 10,
A thermoelectric conversion module, wherein the wiring has a planar shape formed in an arc shape. In the thermoelectric conversion module according to claim 10,
The thermoelectric conversion module according to claim 1, wherein a thickness of the wiring is thinner than a thickness of the one electrode member. A thermoelectric conversion module in which a P-type thermoelectric element and an N-type thermoelectric element are connected to an insulating substrate,
The insulating substrate is provided with a plurality of electrode members to which one of the P-type thermoelectric element and the N-type thermoelectric element is connected,
The first electrode member, the second electrode member adjacent to the first electrode member, and the third electrode member adjacent to the second electrode member constitute an L-shape,
The first electrode member is disposed at a position closer to an end surface in the vertical direction of the insulating substrate than the second electrode member and the third electrode member,
The third electrode member is disposed at a position closer to the lateral end face of the insulating substrate than the first electrode member and the second electrode member,
The first electrode member and the third electrode member are connected by wiring,
The wiring includes a region formed by the lateral end face and a boundary line of the first electrode member facing the lateral end face, and the longitudinal end face and the longitudinal end face. A thermoelectric conversion module, wherein the thermoelectric conversion module is disposed in a region formed by a boundary line of three electrode members. The thermoelectric conversion module according to claim 14,
A thermoelectric conversion module, wherein the wiring has a planar shape formed in an arc shape.

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