JP2016170166A - Magnetic sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetic sensor capable of detecting a weak magnetic field with a simple constitution so as to improve its accuracy.SOLUTION: In the magnetic sensor, a magnetic material which changes a direction of a magnetic field to be input to a magnetoresistance element is arranged nearby the magnetoresistance element whose resistance changes according to the direction of the magnetic field to be input. The magnetic material includes at least one or more projection parts in a direction almost parallel to the magneto-sensitive direction of the magnetoresistance element. The projection direction of the projection parts of the magnetic material may be almost parallel to the magnetization fixation direction of the magnetoresistance element.SELECTED DRAWING: Figure 6

Description

  The present invention relates to a magnetic sensor, and more particularly to a magnetic sensor using a magnetoresistive effect element.

  As a measuring device, a magnetic sensor capable of detecting a change in a magnetic field has been developed, and is used for various applications such as an ammeter and a magnetic encoder. An example of such a magnetic sensor is disclosed in Patent Document 1 below, which uses a GMR element (Giant Magneto Resistive Effect Element) as an element for detecting a change in a magnetic field. Is an element whose resistance value that is output changes in accordance with the input magnetism, and the change in the detected magnetic field can be measured based on the output resistance value.

  And as an example of the concrete structure of the magnetic sensor using a GMR element, as shown in patent document 1, four GMR elements are arrange | positioned on a board | substrate and a bridge circuit is comprised. Then, by detecting the differential voltage of the bridge circuit, a change in the resistance value of the GMR element due to a change in the magnetic field to be detected is detected. As a result, a sensor that is highly sensitive to changes in the magnetic field can be configured.

  Specifically, the magnetic sensor disclosed in Patent Document 1 is a spin valve type GMR element (giant to change in output resistance value according to the direction of an input magnetic field, as an element for detecting a change in a magnetic field. A GMR chip (magnetic field detection chip) using a magnetoresistive element is provided. The GMR elements are fixedly magnetized in a predetermined direction on one surface so that a magnetic field in a predetermined direction can be detected. At this time, in order to reduce the size of the GMR chip and reduce variations in individual resistance values, four GMR elements forming a bridge circuit are formed on one GMR chip. For this reason, the magnetization fixed directions of all four GMR elements are all the same direction.

1 and 2 are diagrams for explaining the characteristics of the GMR element. First, characteristics of the GMR element used in the present invention will be described with reference to FIGS. The GMR element is a spin valve type GMR element (giant magnetoresistive effect element) in which the output resistance value changes according to the direction of the input magnetic field. 1 and 2 show the relationship between the penetration angle of the magnetic field H with respect to the GMR element and the resistance value.

The GMR chip 1 in the example of FIG. 1 has a GMR element formed on the upper surface thereof. This GMR element is configured to be fixed in the direction of arrow A so that a magnetic field in the direction of arrow A can be detected.

In FIG. 1, the GMR element is disposed in a magnetic field H that is incident perpendicular to the formation surface of the GMR element. In this case, the resistance value of the GMR element is “Ro” as shown in FIG. On the other hand, when the direction of the magnetic field H is inclined, as shown by the dotted line in FIG. 1, the incident angle of the magnetic field H with respect to the GMR element surface represents −Δθ (Δ (delta): change amount from the vertical direction. Or tilted by an angle of + Δθ. Then, since the GMR element is magnetized and fixed in one direction as described above, the direction of the magnetic field changes in that direction, and the GMR resistance value changes as shown in FIG. As described above, the GMR element has such a characteristic that when the resistance value is set to Ro in a state where the direction of the incident magnetic field is vertical, the resistance value changes greatly when the direction of the magnetic field H is inclined by a minute angle. Have

  3 and 4 are configuration diagrams of a conventional magnetic sensor. When a unidirectional magnetic field is detected using the GMR chip forming the bridge circuit as described above, in Patent Document 1, a pair of GMR elements that are not connected to each other in the bridge circuit are arranged at substantially the same location. A magnetic body 21 that changes the direction of the magnetic field input to the GMR element is disposed in the vicinity of the element forming portion formed in the above.

  Furthermore, the magnetic body 21 can change an external magnetic field in one direction in different directions between the GMR elements. As a result, the four GMR elements in the bridge circuit are arranged so that the magnetic field is derived in the magnetization fixed direction for one and in the opposite direction for the other. As a result, a large differential voltage is output from the bridge circuit to improve the detection accuracy of the magnetic field in one direction.

  FIG. 5 is a schematic diagram of the magnetic field H introduced into the GMR element portions 11 and 12 by the magnetic body 21 in Patent Document 1. The magnetic body 21 bends the magnetic field H and generates a magnetic field component (X-axis direction magnetic field) in the magnetic sensing direction of the GMR element units 11 and 12 in the GMR element units 11 and 12, and the GMR resistance value as described above. Changes. As a result, a sensor that is highly sensitive to changes in the magnetic field can be configured. In all of the following descriptions, the direction parallel to the magnetization fixed direction of the GMR element is the X-axis direction, and the direction perpendicular to the magnetization fixed direction of the GMR element in the GMR element forming surface is the Y-axis direction. The direction orthogonal to the formation surface is defined as the Z-axis direction.

  Further, Patent Document 2 discloses a sensor that detects a vertical magnetic field component by arranging a plurality of magnetic bodies to be applied to a magnetoresistive effect element by converting an external vertical magnetic field into a horizontal magnetic field component. ing.

Japanese Patent No. 5500785 Japanese Patent No. 5597206

  However, in the techniques disclosed in Patent Document 1 and Patent Document 2, the amount of the magnetic field derived to the element portion is insufficient to detect a weak magnetic field, and it is necessary to improve the magnetic detection accuracy. There was a problem.

Therefore, an object of the present invention is to improve the magnetic detection accuracy of the magnetic sensor, which is the above-described problem, with a simple configuration.

  Therefore, a magnetic sensor according to one embodiment of the present invention is a magnetic body that changes the direction of a magnetic field input to the magnetoresistive effect element in the vicinity of the magnetoresistive effect element whose resistance value changes according to the direction of the input magnetic field. The magnetic detection accuracy can be improved by efficiently deriving the detection magnetic field to the magnetoresistive element by arranging at least one protrusion on the magnetic body.

  In addition, since the protruding direction of the protrusion of the magnetic body is substantially parallel to the magnetization fixed direction of the magnetoresistive element, the detection magnetic field is efficiently derived to the magnetoresistive element, thereby improving the magnetic detection accuracy. I can do it.

The end of the protrusion of the magnetic body in the protruding direction is preferably arranged to be closer to the center of the magnetic body than the end of the magnetoresistive element opposite to the center of the magnetic body. It is desirable that the magnetoresistive element does not have an overlapping region in a direction perpendicular to the magnetoresistive element arrangement surface.

  It is desirable that at least a part of the protrusion of the magnetic body is in contact with the magnetic material placement surface.

Furthermore, the magnetic material is preferably a soft magnetic material.

  According to the above invention, the magnetic detection accuracy of the magnetic sensor can be improved by efficiently deriving the detection magnetic field to the magnetoresistive element by the protrusion of the magnetic body.

It is a figure which shows the structure of a GMR chip | tip. It is a figure explaining the characteristic of a GMR element. It is a figure which shows the conventional magnetic sensor structure (XZ axial surface). It is a figure which shows the conventional magnetic sensor structure (XY axis surface). It is the schematic of the magnetic flux introduced into the GMR element part in a prior art example. It is a figure which shows the structure (XZ axial surface) of the magnetic sensor in Embodiment 1. FIG. It is a figure which shows the structure (XY axis surface) of the magnetic sensor in Embodiment 1. FIG. FIG. 3 is a schematic diagram of magnetic flux introduced into the GMR element unit in the first embodiment. It is an enlarged view of the GMR element part in a prior art example. FIG. 3 is an enlarged view of a GMR element unit in the first embodiment. It is a simulation result of the magnetic field amount of the X-axis direction of the magnetoresistive element part in a prior art example and Embodiment 1. FIG. It is a figure which shows the structure (XZ axial surface) of the magnetic sensor in Embodiment 2. FIG. It is a figure which shows the structure (XY axis surface) of the magnetic sensor in Embodiment 2. FIG. FIG. 6 is a schematic diagram of magnetic flux introduced into the GMR element unit in the second embodiment. It is a simulation result of the magnetic field amount of the X-axis direction of the magnetoresistive element part in a prior art example and Embodiment 2. FIG. It is a figure which shows the structure (XZ axial surface) of the magnetic sensor in Embodiment 3. FIG. It is a figure which shows the structure (XY axis surface) of the magnetic sensor in Embodiment 3. FIG. It is the schematic of the magnetic flux introduced into the GMR element part in Embodiment 3. It is a simulation result of the magnetic field amount of the X-axis direction of the magnetoresistive element part in a prior art example and Embodiment 3. FIG. It is a figure which shows the structure (XZ axial surface) of the magnetic sensor in Embodiment 4. It is a figure which shows the structure (XY axis surface) of the magnetic sensor in Embodiment 4. It is the schematic of the magnetic flux introduced into the GMR element part in Embodiment 4. It is a simulation result of the magnetic field amount of the X-axis direction of the magnetoresistive element part in a prior art example and Embodiment 4. It is a figure which shows the structure (XZ axial surface) of the magnetic sensor in Embodiment 5. It is a figure which shows the structure (XY axis surface) of the magnetic sensor in Embodiment 5. FIG. 10 is a schematic diagram of magnetic flux introduced into the GMR element unit in the fifth embodiment. It is a simulation result of the magnetic field amount of the X-axis direction of the magnetoresistive element part in a prior art example and Embodiment 5. FIG.

  A specific configuration of the present invention will be described in the embodiment. Hereinafter, in Embodiment 1, the basic configuration of the magnetic sensor in the present invention will be described, and in Embodiments 2 to 5, the applied configuration of the magnetic sensor in the present invention will be described.

In addition, although GMR is demonstrated as an example as a magnetoresistive element, it is applicable also to an element with a magnetoresistive effect including TMR, AMR, etc.

(Embodiment 1)
A first embodiment of the present invention will be described with reference to FIGS. FIG. 6 is a configuration diagram in the XZ axis direction of the magnetic sensor according to the present embodiment. FIG. 7 is a configuration diagram in the XY axis direction in the magnetic sensor according to the present embodiment. FIG. 8 is a schematic diagram of a magnetic field incident on the GMR element portion by the magnetic material in the present embodiment. FIG. 9 is an enlarged view of the GMR element portion in the schematic diagram of the magnetic field incident on the GMR element portion by the magnetic material in the conventional example. FIG. 10 is an enlarged view of the GMR element portion in the schematic view of the magnetic field incident on the GMR element portion by the magnetic material in the present embodiment. FIG. 11 is a simulation result of the magnetic field amount in the X-axis direction of the magnetoresistive element portion in the conventional example and this embodiment.

[Constitution]
With reference to FIG. 6 and FIG. 7, the shape of the soft magnetic body of this embodiment is demonstrated. GMR elements 111 and 112 are formed on the GMR chip 110. Further, these GMR elements constitute a bridge circuit, and a magnetic body 121 for changing the direction of a magnetic field input to the magnetoresistive element is disposed in the vicinity of the bridge circuit. The magnetic body 121 has protrusions 122a and 122b in a direction substantially parallel to the magnetic sensing direction A of the magnetoresistive element.

Further, the end portion in the X-axis direction of the protrusion 122 of the magnetic body 121 is the center of the magnetic body 121 in the X-axis direction of the GMR elements 111 and 112, rather than the end portion on the opposite side to the magnetic body center side. It is desirable that the magnetic material and the magnetoresistive effect element are disposed on the inner side, that is, on the inner side. Further, it is desirable that the magnetic body and the magnetoresistive effect element have no overlapping region in a direction perpendicular to the magnetoresistive effect element arrangement surface.

  The magnetic body 121 is, for example, a soft magnetic body such as ferrite, permalloy (Ni—Fe alloy), or sendust (Fe—Si—Al alloy). As a function of the magnetic body 121, the direction of the magnetic field H is changed. The material is not limited as long as it can be used.

  Further, in configuring the magnetic body 121, it is desirable that the magnetic body 121 is composed of one component. However, the number of components is not limited as long as the direction of the magnetic field H can be changed as a function of the magnetic body 121.

[Operation]
Next, the magnetic field H introduced into the GMR element portions 111 and 112 having the above-described configuration will be described with reference to FIGS. A magnetic field from the top of the drawing in the Z-axis direction that is incident on the magnetic body 121 is bent by the magnetic body 121 and introduced into the magnetic body 121 in the same manner as in the conventional example.

  The magnetic field H introduced into the magnetic body 121 is led out in the vicinity of the protrusion 122 of the magnetic body 121 toward the outer side in the X-axis direction of the magnetic body 121 due to the shape of the protrusion. As a result, the magnetic field H collected in the vicinity of the GMR elements 111 and 112 is incident, so that the amount of magnetic field to be detected increases. Further, referring to FIG. 9 and FIG. 10, when comparing the incident angle of the magnetic field H incident on the GMR element part by the above-described operation from the enlarged views of the GMR element part in the conventional example and this example, In the embodiment, it can be confirmed that the magnetic field H is greatly bent in the X-axis direction. As a result, the magnetic field H incident on the GMR element 111 is not only an increase in the amount of magnetic field but also the magnetic sensing direction of the GMR element by bending the magnetic field H due to the action of the magnetic body 121 and the protrusion 122a. The X-axis direction component of the magnetic field H increases, and the detection accuracy of the magnetic sensor can be improved. Although not shown, even on the opposite side on the X-axis, the magnetic field H incident on the GMR element 112 by the action of the magnetic body 121 and the protrusion 122b has a similar action, and the GMR element is sensitive to magnetism. The detection accuracy of the magnetic sensor can be improved by increasing the X-axis direction component of the magnetic field H, which is the direction.

  With reference to FIG. 11, the result of comparing the strength of the magnetic field H introduced into the GMR element portions 111 and 112 having the above-described configuration with a conventional example will be described. In the first embodiment, it can be confirmed that the strength of the magnetic field H introduced into the GMR element portions 111 and 112 is increased as compared with the conventional example.

  Since it acts as described above, the magnetic detection accuracy of the magnetic sensor can be improved by increasing the amount of magnetic field in the GMR element as a result.

(Embodiment 2)
A second embodiment of the present invention will be described with reference to FIGS. FIG. 12 is a configuration diagram in the XZ axis direction of the magnetic sensor according to the present embodiment. FIG. 13 is a configuration diagram in the XY axis direction in the magnetic sensor according to the present embodiment. FIG. 14 is a schematic diagram of a magnetic field incident on the GMR element portion by the magnetic material in the present embodiment. FIG. 15 is a simulation result of the magnetic field amount in the X-axis direction of the magnetoresistive element portion in the conventional example and this embodiment.

[Constitution]
The shape of the soft magnetic material of this embodiment will be described with reference to FIGS. GMR elements 211 and 212 are formed on the GMR chip 210. Further, these GMR elements constitute a bridge circuit, and a magnetic body 221 for changing the direction of a magnetic field input to the magnetoresistive element is disposed in the vicinity of the bridge circuit. The magnetic body 221 has protrusions 222a and 222b in a direction substantially parallel to the magnetic sensing direction A of the magnetoresistive element.

  Further, the tip of the protrusion 222 of the magnetic body 221 has protrusions chamfered portions 223a and 223b facing the GMR element arrangement surface.

  Further, the end portion in the X-axis direction of the protrusion 222 of the magnetic body 221 is the center of the magnetic body 221 in the X-axis direction of the GMR elements 211 and 212 more than the end on the opposite side to the magnetic body center side. It is desirable that the magnetic material and the magnetoresistive effect element are disposed on the inner side, that is, on the inner side. Further, it is desirable that the magnetic body and the magnetoresistive effect element have no overlapping region in a direction perpendicular to the magnetoresistive effect element arrangement surface.

  The magnetic body 221 is a soft magnetic body such as ferrite, permalloy (Ni—Fe alloy), or sendust (Fe—Si—Al alloy), but the direction of the magnetic field H is changed as a function of the magnetic body 221. The material is not limited as long as it can be used.

  Further, in configuring the magnetic body 221, it is desirable that the magnetic body 221 be configured by one component, but the number of components is not limited as long as the direction of the magnetic field H can be changed as a function of the magnetic body 221.

[Operation]
Next, with reference to FIG. 14, the magnetic field H introduced into the GMR element sections 211 and 212 having the above configuration will be described. The magnetic field from the top of the paper surface in the Z-axis direction incident on the magnetic body 221 is bent by the magnetic body 221 and introduced into the magnetic body 221 in the same manner as in the conventional example.

  The magnetic field H introduced into the magnetic body 221 is led out in the X-axis direction of the magnetic body 221 by the shape of the protrusion in the vicinity of the protrusion 222 of the magnetic body 221. Further, the magnetic field H is collected at the end of the protrusion 222 in the Y-axis direction by the action of the protrusion chamfered portions 223a and 223b. As a result, the magnetic field H collected in the vicinity of the GMR elements 211 and 212 is incident, so that the amount of magnetic field to be detected increases. Further, also in the present embodiment, as in the first embodiment, the incident angle of the magnetic field H incident on the GMR element portion is greatly bent in the magnetosensitive direction (X-axis direction) of the GMR element. As a result, the magnetic field H incident on the GMR element 211 is not only an increase in the amount of magnetic field, but also the magnetic sensing direction of the GMR element due to the bending of the magnetic field H by the action of the magnetic body 221 and the protrusion 222. By increasing the X-axis direction component of the magnetic field H, the detection accuracy of the magnetic sensor can be improved.

  With reference to FIG. 15, the result of comparing the strength of the magnetic field H introduced into the GMR element portions 211 and 212 having the above-described configuration with a conventional example will be described. In the second embodiment, it can be confirmed that the strength of the magnetic field H introduced into the GMR element portions 211 and 212 is increased as compared with the conventional example.

  Since it acts as described above, the magnetic detection accuracy of the magnetic sensor can be improved by increasing the amount of magnetic field in the GMR element as a result.

(Embodiment 3)
A third embodiment of the present invention will be described with reference to FIGS. FIG. 16 is a configuration diagram in the XZ axis direction of the magnetic sensor according to the present embodiment. FIG. 17 is a configuration diagram in the XY axis direction in the magnetic sensor according to the present embodiment. FIG. 18 is a schematic diagram of a magnetic field incident on the GMR element portion by the magnetic material in the present embodiment. FIG. 19 is a simulation result of the magnetic field amount in the X-axis direction of the magnetoresistive element portion in the conventional example and this embodiment.

[Constitution]
The shape of the soft magnetic body of the present embodiment will be described with reference to FIGS. GMR elements 311 and 312 are formed on the GMR chip 310. Further, these GMR elements constitute a bridge circuit, and a magnetic body 321 for changing the direction of a magnetic field input to the magnetoresistive element is disposed in the vicinity of the bridge circuit. The magnetic body 321 has protrusions 322a and 322b in a direction substantially parallel to the magnetic sensing direction A of the magnetoresistive element.

  Further, the magnetic body 321 and the protrusion 322 are connected by the protrusion inclined connection portions 324a and 324b having an inclination.

  Further, the end of the protrusion 322 of the magnetic body 321 in the X-axis direction is the center of the magnetic body 321 in the X-axis direction of the GMR elements 311 and 312, rather than the end opposite to the center of the magnetic body. It is desirable that the magnetic material and the magnetoresistive effect element are disposed on the inner side, that is, on the inner side. Further, it is desirable that the magnetic body and the magnetoresistive effect element have no overlapping region in a direction perpendicular to the magnetoresistive effect element arrangement surface.

  The magnetic body 321 is, for example, a soft magnetic body such as ferrite, permalloy (Ni—Fe alloy), or sendust (Fe—Si—Al alloy). As a function of the magnetic body 321, the direction of the magnetic field H is changed. The material is not limited as long as it can be used.

  Further, in configuring the magnetic body 321, it is desirable that the magnetic body 321 is composed of one component. However, the number of components is not limited as long as the direction of the magnetic field H can be changed as a function of the magnetic body 321.

[Operation]
Next, the magnetic field H introduced into the GMR element units 311 and 312 having the above-described configuration will be described with reference to FIG. The magnetic field from the top of the drawing in the Z-axis direction that is incident on the magnetic body 321 is bent by the magnetic body 321 and introduced into the magnetic body 321 in the same manner as in the conventional example.

  The magnetic field H introduced into the magnetic body 321 is led out in the X-axis direction of the magnetic body 321 by the shape of the protrusion in the vicinity of the protrusion 322 of the magnetic body 321. Further, the magnetic field H is collected at the end of the protrusion 322 in the Y-axis direction by the action of the protrusion inclined connection portions 324a and 324b. As a result, the magnetic field H collected in the vicinity of the GMR elements 311 and 312 is incident, so that the amount of magnetic field to be detected increases. Further, also in the present embodiment, as in the first embodiment, the incident angle of the magnetic field H incident on the GMR element portion is greatly bent in the magnetosensitive direction (X-axis direction) of the GMR element. As a result, the magnetic field H incident on the GMR element 311 is not only increased in the amount of magnetic field, but also the magnetic field H is bent by the action of the magnetic body 321 and the protrusions 322, so that the magnetic field that is in the magnetosensitive direction of the GMR element. The increase in the X-axis direction component of H can improve the detection accuracy of the magnetic sensor.

  With reference to FIG. 19, the result of comparing the strength of the magnetic field H introduced into the GMR element units 311 and 312 having the above-described configuration with a conventional example will be described. In the third embodiment, it can be confirmed that the strength of the magnetic field H introduced into the GMR element portions 311 and 312 is increased as compared with the conventional example.

  Since it acts as described above, the magnetic detection accuracy of the magnetic sensor can be improved by increasing the amount of magnetic field in the GMR element as a result.

(Embodiment 4)
A fourth embodiment of the present invention will be described with reference to FIGS. FIG. 20 is a configuration diagram in the XZ axis direction of the magnetic sensor according to the present embodiment. FIG. 21 is a configuration diagram in the XY axis direction in the magnetic sensor according to the present embodiment. FIG. 22 is a schematic diagram of a magnetic field incident on the GMR element portion by the magnetic material in the present embodiment. FIG. 23 is a simulation result of the magnetic field amount in the X-axis direction of the magnetoresistive element portion in the conventional example and this embodiment.

[Constitution]
The shape of the soft magnetic material of the present embodiment will be described with reference to FIGS. GMR elements 411 and 412 are formed on the GMR chip 410. Further, these GMR elements constitute a bridge circuit, and a magnetic body 421 for changing the direction of a magnetic field input to the magnetoresistive element is disposed in the vicinity of the bridge circuit. The magnetic body 421 has protrusions 422a and 422b in a direction substantially parallel to the magnetic sensing direction A of the magnetoresistive element.

  Furthermore, the tip of the protrusion 422 of the magnetic body 421 has protrusion tip narrowing portions 425a, 425b, 425c, and 425d that face the protrusion direction of the protrusion 422 of the magnetic bodies 421 and 412.

  Further, the end portion in the X-axis direction of the protrusion 422 of the magnetic body 421 is the center of the magnetic body 421 in the X-axis direction of the GMR elements 411 and 412 rather than the end on the opposite side to the magnetic body center side. It is desirable that the magnetic material and the magnetoresistive effect element are disposed on the inner side, that is, on the inner side. Further, it is desirable that the magnetic body and the magnetoresistive effect element have no overlapping region in a direction perpendicular to the magnetoresistive effect element arrangement surface.

  The magnetic body 421 is, for example, a soft magnetic body such as ferrite, permalloy (Ni—Fe alloy), or sendust (Fe—Si—Al alloy). As a function of the magnetic body 421, the direction of the magnetic field H is changed. The material is not limited as long as it can be used.

  Further, in configuring the magnetic body 421, it is desirable that the magnetic body 421 is composed of one component. However, the number of components is not limited as long as the direction of the magnetic field H can be changed as a function of the magnetic body 421.

[Operation]
Next, with reference to FIG. 22, the magnetic field H introduced to the GMR element part 411 by the said structure is demonstrated. A magnetic field from the upper side of the drawing in the Z-axis direction that is incident on the magnetic body 421 is bent by the magnetic body 421 and introduced into the magnetic body 421 in the same manner as in the conventional example.

  The magnetic field H introduced into the magnetic body 421 is led out toward the outer side in the X-axis direction of the magnetic body 421 by the shape of the protrusion in the vicinity of the protrusion 422 of the magnetic body 421. Further, the magnetic field H is collected at the end of the protrusion 422 in the Y-axis direction by the action of the protrusion-end throttle portions 425a, 425b, 425c, and 425d. As a result, the magnetic field H collected in the vicinity of the GMR elements 411 and 412 is incident, so that the amount of magnetic field to be detected increases. Further, also in the present embodiment, as in the first embodiment, the incident angle of the magnetic field H incident on the GMR element portion is greatly bent in the magnetosensitive direction (X-axis direction) of the GMR element. As a result, the magnetic field H incident on the GMR element 411 is not only an increase in the amount of magnetic field but also the magnetic sensing direction of the GMR element due to the bending of the magnetic field H by the action of the magnetic body 421 and the protrusion 422. By increasing the X-axis direction component of the magnetic field H, the detection accuracy of the magnetic sensor can be improved.

  With reference to FIG. 23, the result of comparing the strength of the magnetic field H introduced into the GMR element portions 411 and 412 having the above-described configuration with a conventional example will be described. In the fourth embodiment, it can be confirmed that the strength of the magnetic field H introduced into the GMR element portions 411 and 412 is increased as compared with the conventional example.

  Since it acts as described above, the magnetic detection accuracy of the magnetic sensor can be improved by increasing the amount of magnetic field in the GMR element as a result.

(Embodiment 5)
A fifth embodiment of the present invention will be described with reference to FIGS. FIG. 24 is a configuration diagram in the XZ axis direction of the magnetic sensor according to the present embodiment. FIG. 25 is a configuration diagram in the XY axis direction in the magnetic sensor according to the present embodiment. FIG. 26 is a schematic diagram of a magnetic field incident on the GMR element portion by the magnetic material in the present embodiment. FIG. 27 is a simulation result of the magnetic field amount in the X-axis direction of the magnetoresistive element portion in the conventional example and this embodiment.

[Constitution]
With reference to FIG. 24 and FIG. 25, the shape of the soft magnetic body of this embodiment is demonstrated. GMR elements 511 and 512 are formed on the GMR chip 510. Further, these GMR elements constitute a bridge circuit, and a magnetic body 521 for changing the direction of a magnetic field input to the magnetoresistive element is disposed in the vicinity of the bridge circuit. The magnetic body 521 has protrusions 522a and 522b in a direction substantially parallel to the magnetic sensing direction A of the magnetoresistive element.

  Further, the magnetic body 521 has a cross-sectional area in the XY plane that is larger on the surface opposite to the surface having the protrusion 522 than on the protrusion start portion of the protrusion 522. Inclined portions 526a and 526b are provided. Further, although not shown, the magnetic body inclined portion 526 is not limited to the shape extending in the X-axis direction as shown in FIG. 24, and may have a shape extending in the Y-axis direction. The shape may include the direction of the part.

  Further, the end portion in the X-axis direction of the protrusion 522 of the magnetic body 521 is the center of the magnetic body 521 in the X-axis direction of the GMR elements 511 and 512 more than the end on the opposite side to the magnetic body center side. It is desirable that the magnetic material and the magnetoresistive effect element are disposed on the inner side, that is, on the inner side. Further, it is desirable that the magnetic body and the magnetoresistive effect element have no overlapping region in a direction perpendicular to the magnetoresistive effect element arrangement surface.

  The magnetic body 521 is, for example, a soft magnetic body such as ferrite, permalloy (Ni—Fe alloy), or sendust (Fe—Si—Al alloy). As a function of the magnetic body 521, the direction of the magnetic field H is changed. The material is not limited as long as it can be used.

  Further, in configuring the magnetic body 521, it is desirable that the magnetic body 521 be composed of one component. However, the number of components is not limited as long as the direction of the magnetic field H can be changed as a function of the magnetic body 521.

[Operation]
Next, the magnetic field H introduced into the GMR element portions 511 and 512 having the above configuration will be described with reference to FIG. The magnetic field from the top of the drawing in the Z-axis direction incident on the magnetic body 521 is bent by the magnetic body 321 and introduced into the magnetic body 521 in the same manner as in the conventional example.

  The magnetic field H introduced into the magnetic body 521 is led out toward the outer side in the X-axis direction of the magnetic body 521 by the shape of the protrusion near the protrusion 522 of the magnetic body 521. Furthermore, the magnetic field H incident on the magnetic body 521 is converged to the center of the magnetic body 521 in the X-axis direction in the process toward the protrusion 522 by the action of the magnetic body inclined portion 526, thereby strengthening the magnetic field H. The effect that works. Then, the magnetic field H converged on the center of the magnetic body 521 in the X-axis direction is collected at the end of the protrusion 522 in the Y-axis direction. Thereby, as a result, the magnetic field H collected by the GMR elements 511 and 512 is incident, so that the amount of magnetic field to be detected increases. Further, also in the present embodiment, as in the first embodiment, the incident angle of the magnetic field H incident on the GMR element portion is greatly bent in the magnetosensitive direction (X-axis direction) of the GMR element. As a result, the magnetic field H incident on the GMR element 511 is not only an increase in the amount of magnetic field, but also the magnetic sensing direction of the GMR element by bending the magnetic field H due to the action of the magnetic body 521 and the protrusion 522. By increasing the X-axis direction component of the magnetic field H, the detection accuracy of the magnetic sensor can be improved.

  With reference to FIG. 27, the result of comparing the strength of the magnetic field H introduced into the GMR element portions 511 and 512 having the above-described configuration with a conventional example will be described. In the fifth embodiment, it can be confirmed that the strength of the magnetic field H introduced into the GMR element portions 511 and 512 is increased as compared with the conventional example.

  Since it acts as described above, the magnetic detection accuracy of the magnetic sensor can be improved by increasing the amount of magnetic field in the GMR element as a result.

  The present invention can be used for various measuring devices such as a magnetic sensor, an ammeter, an encoder, and has industrial applicability.

DESCRIPTION OF SYMBOLS 1 GMR chip 10 GMR chip in conventional example 11,12 Element forming portion in conventional example 21 Magnetic material in conventional example 110 GMR chip in first embodiment 111,112 Element forming portion in first embodiment 121 Magnetic material in first embodiment 122 Implementation Protrusion part in embodiment 1 210 GMR chip in embodiment 2 211, 212 Element formation part in embodiment 2 221 Magnetic material in embodiment 2 222 Projection part in embodiment 2 222 Projection tip chamfering part in embodiment 2 310 Embodiment 3 GMR chips 311 and 312 in Embodiment 3 Element formation portion in Embodiment 3 321 Magnetic material in Embodiment 3 322 Protrusion portion in Embodiment 3 324 Protrusion portion inclined connection portion in Embodiment 3 410 GMR chip 411 in Embodiment 4 412 Element Forming Unit in Embodiment 4 421 Magnetic Material in Embodiment 4 422 Projecting Part in Embodiment 4 425 Projecting Part Tip Restriction Part in Embodiment 4 510 GMR Chip in Embodiment 5 511 512 Element Forming Part in Embodiment 5 521 Magnetic body in Embodiment 5 522 Protrusion part in Embodiment 5 526 Magnetic body inclined part in Embodiment 5 A Magnetization fixed direction H Magnetic field

Claims (5)

  A magnetic body that changes the direction of the magnetic field input to the magnetoresistive effect element is disposed in the vicinity of the magnetoresistive effect element whose resistance value changes according to the direction of the input magnetic field, and the magnetic body is at least A magnetic sensor having one or more protrusions.   2. The magnetic sensor according to claim 1, wherein a protruding direction of the protruding portion of the magnetic body is substantially parallel to a magnetization fixed direction of the magnetoresistive effect element.   An end portion of the magnetic body in the protruding direction of the protruding portion is closer to the magnetic body center side than an end portion on the opposite side to the magnetic body central side in the protruding direction of the protruding portion of the magnetoresistive element. The magnetic sensor according to claim 1, wherein the magnetic sensor is arranged to be. 4. The magnetic sensor according to claim 1, wherein at least a part of the projecting portion of the magnetic body is in contact with an arrangement surface of the magnetic body. 5. The magnetic sensor according to claim 1, wherein the magnetic body is a soft magnetic body.

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