JP2016164986A5 - - Google Patents
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- Publication number
- JP2016164986A5 JP2016164986A5 JP2016043106A JP2016043106A JP2016164986A5 JP 2016164986 A5 JP2016164986 A5 JP 2016164986A5 JP 2016043106 A JP2016043106 A JP 2016043106A JP 2016043106 A JP2016043106 A JP 2016043106A JP 2016164986 A5 JP2016164986 A5 JP 2016164986A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- waveguide
- region
- gain
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP15157905.9A EP3065237B1 (en) | 2015-03-06 | 2015-03-06 | A temperature insensitive laser |
| EP15157905.9 | 2015-03-06 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016164986A JP2016164986A (ja) | 2016-09-08 |
| JP2016164986A5 true JP2016164986A5 (cg-RX-API-DMAC7.html) | 2017-07-13 |
| JP6300846B2 JP6300846B2 (ja) | 2018-03-28 |
Family
ID=52627081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016043106A Active JP6300846B2 (ja) | 2015-03-06 | 2016-03-07 | 温度無依存レーザ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20160261092A1 (cg-RX-API-DMAC7.html) |
| EP (1) | EP3065237B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6300846B2 (cg-RX-API-DMAC7.html) |
| CN (1) | CN105938975B (cg-RX-API-DMAC7.html) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11239634B2 (en) * | 2016-02-29 | 2022-02-01 | Unm Rainforest Innovations | Ring laser integrated with silicon-on-insulator waveguide |
| CN108075355A (zh) * | 2016-11-16 | 2018-05-25 | 苏州旭创科技有限公司 | 基于soi结构的热不敏感激光器 |
| CN108075356A (zh) * | 2016-11-16 | 2018-05-25 | 苏州旭创科技有限公司 | 基于soi结构的热不敏感激光器 |
| CN106848813B (zh) * | 2017-03-27 | 2019-10-29 | 武汉电信器件有限公司 | 一种基于soi混合集成热不敏感激光器结构和制作方法 |
| CN106877169B (zh) * | 2017-03-31 | 2019-10-29 | 武汉电信器件有限公司 | 一种基于soi的异质结热不敏感激光器结构和制造方法 |
| CN108123365A (zh) * | 2017-12-25 | 2018-06-05 | 武汉邮电科学研究院 | 一种无温漂的片上集成激光器及其制备方法 |
| KR102074172B1 (ko) | 2018-03-30 | 2020-02-06 | 경북대학교 산학협력단 | 원형 공진기, 이를 포함하는 광 변환기 및 광학 소자 |
| WO2020096950A1 (en) * | 2018-11-06 | 2020-05-14 | The Regents Of The University Of California | Heterogeneously integrated indium gallium nitride on silicon photonic integrated circuits |
| FR3088776B1 (fr) | 2018-11-15 | 2020-11-20 | Commissariat Energie Atomique | Source laser a semi-conducteur |
| FR3088777B1 (fr) | 2018-11-15 | 2020-11-20 | Commissariat Energie Atomique | Source laser a semi-conducteur et procede d'emission avec cette source laser |
| CN113126217B (zh) * | 2020-01-16 | 2022-11-11 | 华为技术有限公司 | 一种光发端器件、光发端器件的制备方法及光通信设备 |
| CN116045954B (zh) * | 2023-03-31 | 2023-06-09 | 中国船舶集团有限公司第七〇七研究所 | 光学陀螺用混合谐振腔及光学陀螺 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
| GB9710062D0 (en) * | 1997-05-16 | 1997-07-09 | British Tech Group | Optical devices and methods of fabrication thereof |
| JP2000352633A (ja) * | 1999-04-05 | 2000-12-19 | Nec Corp | 光導波路、それを用いた導波路型光デバイス、及び導波路型光デバイスの製造方法 |
| JP2002190643A (ja) * | 2000-12-20 | 2002-07-05 | Nippon Telegr & Teleph Corp <Ntt> | 温度無依存型レーザ |
| US20040105476A1 (en) * | 2002-08-19 | 2004-06-03 | Wasserbauer John G. | Planar waveguide surface emitting laser and photonic integrated circuit |
| CN1306624C (zh) * | 2003-07-16 | 2007-03-21 | 璨圆光电股份有限公司 | 选择性生长的发光二极管结构 |
| US7750356B2 (en) * | 2005-05-04 | 2010-07-06 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Silicon optical package with 45 degree turning mirror |
| US20080002929A1 (en) * | 2006-06-30 | 2008-01-03 | Bowers John E | Electrically pumped semiconductor evanescent laser |
| US7831123B2 (en) * | 2006-09-07 | 2010-11-09 | Massachusetts Institute Of Technology | Microphotonic waveguide including core/cladding interface layer |
| JP5038371B2 (ja) * | 2008-09-26 | 2012-10-03 | キヤノン株式会社 | 面発光レーザの製造方法 |
| JPWO2011108617A1 (ja) * | 2010-03-05 | 2013-06-27 | 日本電気株式会社 | アサーマル光導波素子 |
| JP5764875B2 (ja) * | 2010-06-02 | 2015-08-19 | 富士通株式会社 | 半導体光装置 |
| WO2013119981A1 (en) * | 2012-02-10 | 2013-08-15 | Massachusetts Institute Of Technology | Athermal photonic waveguide with refractive index tuning |
| US9638858B2 (en) * | 2014-08-04 | 2017-05-02 | Oracle International Corporation | Athermal hybrid optical source |
-
2015
- 2015-03-06 EP EP15157905.9A patent/EP3065237B1/en active Active
-
2016
- 2016-02-22 CN CN201610096175.6A patent/CN105938975B/zh active Active
- 2016-03-04 US US15/061,454 patent/US20160261092A1/en not_active Abandoned
- 2016-03-07 JP JP2016043106A patent/JP6300846B2/ja active Active
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