JP2016163105A - High-frequency semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor module capable of enhancing its performance.SOLUTION: A high-frequency semiconductor module according to an embodiment comprises: a cooling body; a high-frequency semiconductor device that has on its surface a high-frequency circuit including a signal processing circuit arranged on the cooling body and configured to perform signal processing to a high-frequency signal; a thermal insulation container that accommodates the cooling body and the high-frequency semiconductor device therein; and a plurality of shielding bodies provided between the high-frequency semiconductor device including the high-frequency circuit and an inner surface of the thermal insulation container. The plurality of shielding bodies electromagnetically-spatially separate a space on the high-frequency circuit and its peripheral space from each other, and are provided so as to electromagnetically-spatially separate the space on the high-frequency circuit into a plurality of spaces.SELECTED DRAWING: Figure 8

Description

  Embodiments described herein relate generally to a high-frequency semiconductor module.

  For example, a low-noise amplification element that amplifies a received high-frequency signal is used in a receiving device or the like used for wireless communication. It is generally known that the NF (Noise Figure) characteristics of a low noise amplifying element are improved as the operating temperature is lowered.

  One means for operating the low noise amplifying element at a low temperature is to arrange the low noise amplifying element on a low temperature cooling body and to cover the low noise amplifying element arranged on the cooling body with a heat insulating container. . The low noise amplification element is cooled by the cooling body. Furthermore, since the low noise amplification element arranged on the cooling body is covered with the heat insulating container, the inflow of heat from the outside is suppressed, and the low temperature state can be efficiently maintained.

  As a high-frequency semiconductor module having such a structure, it is known to use an electromagnetic coupling unit for input / output of a high-frequency signal to / from a low-noise amplification element. The electromagnetic coupling part can make the outside and the inside of the heat insulating container non-contact while maintaining an electrical connection between the outside and the inside of the heat insulating container. Therefore, inflow of heat from the outside to the inside of the heat insulating container is suppressed, and the cooling effect of the low noise amplifying element by the cooling body can be enhanced.

  In recent years, higher performance of this type of high-frequency semiconductor module has been desired.

JP 2014-17598 A

  An object of the embodiment is to provide a high-frequency semiconductor module capable of high performance.

  The high-frequency semiconductor module according to the embodiment includes a cooling body, a high-frequency semiconductor device having a high-frequency circuit disposed on the cooling body and including a signal processing circuit that performs signal processing on a high-frequency signal, and the cooling body. And a heat insulating container that houses the high-frequency semiconductor device therein, and a plurality of shielding bodies provided between the high-frequency semiconductor device including the high-frequency circuit and the inner surface of the heat insulating container. The plurality of shields are provided so as to electromagnetically separate the space on the high-frequency circuit and the surrounding space from each other and to separate the space on the high-frequency circuit into a plurality of electromagnetic spaces.

It is a disassembled perspective view which shows the cooling body and high frequency semiconductor device of the high frequency semiconductor module which concern on 1st Embodiment. It is a perspective view which expands and shows the 1st electromagnetic coupling circuit of a high frequency semiconductor device. It is a perspective view at the time of seeing the 1st height adjustment circuit applied to the high frequency semiconductor module concerning a 1st embodiment from the slanting upper part. It is a perspective view at the time of seeing the 1st height adjustment circuit applied to the high frequency semiconductor module concerning a 1st embodiment from the slanting lower part. It is a disassembled perspective view which shows the 1st height adjustment circuit and 1st electromagnetic coupling circuit which are shown to FIG. 3A and FIG. 3B. FIG. 5 is a partial cross-sectional view of the first height adjustment circuit and the first electromagnetic coupling circuit taken along one-dot chain line XX ′ in FIG. 4. It is a perspective view which shows the cooling body and high frequency semiconductor device of the high frequency semiconductor module which concern on 1st Embodiment. It is a perspective view which shows the principal part of the high frequency semiconductor module which concerns on 1st Embodiment comprised by providing a heat insulation container in a high frequency semiconductor device. FIG. 8 is a cross-sectional view of the entire high-frequency semiconductor module according to the first embodiment, including a cross-section along the alternate long and short dash line YY ′ of FIG. 7. It is a perspective view which shows a part of heat insulation container of the high frequency semiconductor module which concerns on 1st Embodiment. It is a figure which shows typically the positional relationship of the high frequency circuit and the some shielding board of the high frequency semiconductor module which concerns on 1st Embodiment. FIG. 9 is a cross-sectional view of the entire high-frequency semiconductor module according to the second embodiment corresponding to FIG. 8. It is a figure which shows typically the positional relationship of the shielding board and metal body of the high frequency semiconductor module which concern on 2nd Embodiment. It is sectional drawing which expands and shows the shielding board and metal body of the high frequency semiconductor module which concern on 2nd Embodiment. It is a perspective view corresponding to FIG. 9 which shows a part of heat insulation container applied to the high frequency semiconductor module which concerns on 3rd Embodiment. FIG. 9 is a cross-sectional view of the entire high-frequency semiconductor module according to the third embodiment, corresponding to FIG. It is a figure which shows typically the positional relationship of the high frequency circuit of the high frequency semiconductor module which concerns on 2nd Embodiment, a base board, and a metal body. It is sectional drawing which expands and shows the metal body of the high frequency semiconductor module which concerns on 3rd Embodiment. It is sectional drawing corresponding to FIG. 17A which shows the 1st modification of the metal body of the high frequency semiconductor module which concerns on 3rd Embodiment. It is sectional drawing corresponding to FIG. 17A which shows the 2nd modification of the metal body of the high frequency semiconductor module which concerns on 3rd Embodiment. FIG. 9 is a cross-sectional view corresponding to FIG. 8 of the entire high-frequency semiconductor module according to a fourth embodiment. It is a figure which shows typically the positional relationship of the high frequency circuit and base plate of a high frequency semiconductor module which concerns on 4th Embodiment, and a metal body.

  The high-frequency semiconductor module according to the present embodiment includes a cooling body, a high-frequency semiconductor device disposed on the cooling body, and a heat insulating container that houses the cooling body and the high-frequency semiconductor device. The high frequency semiconductor device is cooled to a low temperature by a cooling body. And since the cooling body and the high frequency semiconductor device are covered with the heat insulation container, inflow of the heat from the outside is suppressed and the low temperature state can be efficiently maintained. Therefore, the high-frequency semiconductor device can operate at a low temperature and can improve NF (Noise Figure) characteristics. Hereinafter, a high-frequency semiconductor module according to such an embodiment will be described with reference to the drawings.

<First Embodiment>
FIG. 1 is an exploded perspective view showing a high-frequency semiconductor module cooling body and a high-frequency semiconductor device according to the first embodiment. As shown in FIG. 1, the high-frequency semiconductor device 10 is disposed on the cooling body 11.

  In the high-frequency semiconductor device 10 disposed on the cooling body 11, a signal processing circuit 13 that performs signal processing on a high-frequency signal is disposed on the surface of a base plate 12 that is a carrier plate made of Cu, for example. Yes. The signal processing circuit 13 is provided on the insulating substrate 14, a plurality of high-frequency semiconductor elements 15 (hereinafter sometimes referred to as semiconductor elements) provided on the upper surface of the substrate 14, and the upper surface of the insulating substrate 14. A branch / matching circuit 16 and a synthesis / matching circuit 17 connected to the plurality of semiconductor elements 15.

The insulating substrate 14 is a substrate made of alumina (Al ₂ O ₃ ), for example. Each of the plurality of semiconductor elements 15 is, for example, a low noise amplification element. The branch / matching circuit 16 and the synthesis / matching circuit 17 each include a Lange coupler, a matching line, and the like.

  Although not shown, the signal processing circuit 13 is also provided with a capacitor element and the like.

  A portion for inputting a high frequency signal from the outside of the heat insulating container 18 (FIG. 7 and the like) to the signal processing circuit 13 and a portion for outputting a high frequency signal output from the signal processing circuit 13 to the outside of the heat insulating container 18; Are constituted by electromagnetic coupling portions 19 and 20, respectively. The electromagnetic coupling units 19 and 20 are electrically connected to the signal processing circuit 13. And the electromagnetic coupling parts 19 and 20 make the inside and the outside of the heat insulation container 18 non-contact at the same time to electrically connect the inside and the outside of the heat insulation container 18 by electromagnetic coupling. Below, the electromagnetic coupling parts 19 and 20 are explained in full detail.

  A first electromagnetic coupling unit 19, which is an electromagnetic coupling unit 19 on the input side for inputting a high frequency signal from the outside of the heat insulating container 18 (FIG. 7, etc.) to the signal processing circuit 13, is electrically connected to the signal processing circuit 13. The internal input circuit 21 is an internal circuit and the first electromagnetic coupling circuit 22 disposed above the internal input circuit 21.

  The internal input circuit 21 is, for example, a superconducting circuit, and a YBCO thin film (not shown) and a gold (Au) thin film serving as a protective layer are provided on a superconducting substrate 23 (magnesium oxide (MgO) substrate or the like). The YBCO thin film and the gold thin film on the substrate) are dry-etched to provide the W-shaped wiring 24 on the superconductive substrate 23. The internal input circuit 21 is disposed on the upper surface of the base plate 12 and is pressed against the base plate 12 by a fixture 25 such as a leaf spring provided on the base plate 12. Then, the signal processing circuit 13 is electrically connected to the branching / matching circuit 16 through a connection conductor 26 such as a wire.

  The first electromagnetic coupling circuit 22 is a circuit that is electrically connected to the internal input circuit 21 by electromagnetic coupling, and is a circuit that supplies a high-frequency signal to the wiring 24 of the internal input circuit 21 by electromagnetic coupling. The first electromagnetic coupling circuit 22 is disposed above the internal input circuit 21 so as to be separated from the internal input circuit 21. The first electromagnetic coupling circuit 22 is disposed, for example, at a position spaced about 1 mm above the internal input circuit 21. The first electromagnetic coupling circuit 22 is supported at a predetermined position by a heat insulating container 18 described later (FIGS. 7 and 10). The support structure of the first electromagnetic coupling circuit 22 will be described in detail later.

  FIG. 2 is an enlarged perspective view showing the first electromagnetic coupling circuit 22. As shown in FIG. 2, in the first electromagnetic coupling circuit 22, an I-shaped wiring 28a is provided on the upper surface of an insulating substrate 27 made of alumina or the like having a thickness of about 1 mm. On the upper surface of the insulating substrate 27, a lead-out wiring 28b connected to the I-shaped wiring 28a and a pad electrode 28c connected to the lead-out wiring 28b are provided. Further, a ground metal 29 is provided on the upper surface of the insulating substrate 27 so as to surround the periphery of the I-shaped wiring 28a, the lead-out wiring 28b, and the pad electrode 28c.

  On the other hand, as shown by a dotted line in FIG. 2, a ground metal 30 is provided on the entire lower surface of the insulating substrate 27, and a part of the ground metal 30 is removed in a U shape. A through hole 31 penetrating the substrate 27 is provided in the periphery of the insulating substrate 27, and the ground metal 29 on the upper surface of the insulating substrate 27 and the ground metal 30 on the lower surface are provided in the through hole 31. Are electrically connected by a conductor.

  In the first electromagnetic coupling circuit 22, when a high frequency signal is input to the I-shaped wiring 28 a provided on the upper surface of the insulating substrate 27, the high frequency signal is generated by the electromagnetic coupling. It is transmitted to the W-shaped wiring 24 of the internal input circuit 21 disposed below.

  Next, the second electromagnetic coupling unit 20, which is an output side electromagnetic coupling unit that outputs a high-frequency signal output from the signal processing circuit 13 to the outside of the heat insulating container 18 (FIG. 7, etc.), electrically connects the signal processing circuit 13. The internal output circuit 32 is an internal circuit connected to the internal output circuit 32, and the second electromagnetic coupling circuit 33 is disposed above the internal output circuit 32.

  For example, the internal output circuit 32 is formed on the surface of an insulating substrate 14 such as alumina extending from the signal processing circuit 13 by gold (Au) so as to extend from the synthesis / matching circuit 17 of the signal processing circuit 13. The wiring 34 is provided in a letter shape. The internal output circuit 32 is disposed on the upper surface of the base plate 12 together with the signal processing circuit 13, and is pressed against the base plate 12 together with the signal processing circuit 13 by a fixture 25 such as a leaf spring provided on the base plate 12. ing.

  The second electromagnetic coupling circuit 33 is a circuit electrically connected to the internal output circuit 32 by electromagnetic coupling, and is a circuit to which a high frequency signal is supplied from the wiring 34 of the internal output circuit 32 by electromagnetic coupling. The second electromagnetic coupling circuit 33 is disposed above the internal output circuit 32 so as to be separated from the internal output circuit 32. The second electromagnetic coupling circuit 33 is disposed, for example, at a position spaced about 1 mm above the internal output circuit 32. The specific configuration of the second electromagnetic coupling circuit 33 is the same as that of the first electromagnetic coupling circuit 22 shown in FIG. 2, and an I-shaped wiring 35a and a lead are formed on the upper surface of the insulating substrate. A wiring 35b and a pad electrode 35c are provided, and a ground metal 36 is provided so as to surround these. Similar to the first electromagnetic coupling circuit 22, the second electromagnetic coupling circuit 33 is supported at a predetermined position by a heat insulating container 18 described later (FIGS. 7 and 10). The support structure of the second electromagnetic coupling circuit 33 will be described in detail later.

  When a high-frequency signal is input to the W-shaped wiring 34 of the internal output circuit 32 arranged below the second electromagnetic coupling circuit 33, the high-frequency signal is converted into the second electromagnetic coupling by electromagnetic coupling. This is transmitted to the I-shaped wiring 35 a on the surface of the circuit 33.

  As described above, the first and second electromagnetic coupling portions 19 and 20 electrically connect the inside and the outside of the heat insulating container 18 by electromagnetic coupling. The first and second electromagnetic coupling portions 19 and 20 make the inside and outside of the heat insulating container 18 non-contact as described above, which will be described later.

  The first electromagnetic coupling circuit 22 of the first electromagnetic coupling unit 19 is electrically connected to an external input circuit 38 that is an external circuit having a first external signal line 37 that receives a high-frequency signal from the outside of the module. The second electromagnetic coupling circuit 33 of the second electromagnetic coupling unit 20 is electrically connected to an external output circuit 40 that is an external circuit having a second external signal line 39 for sending a high-frequency signal to the outside of the module. Is done. Each of the external input circuit 38 and the external output circuit 40 is a printed circuit board, and is configured by providing the first external signal line 37 or the second external signal line 39 on the upper surface of the insulating substrate 41. The external input circuit 38 and the external output circuit 40 are respectively disposed on the outer peripheral surface of the heat insulating container 18 described later (FIG. 7). Each of the external input circuit 38 and the external output circuit 40 is also provided with a grounding line 42 that is grounded.

  Note that the positions of the first electromagnetic coupling circuit 22 and the external input circuit 38 in the height direction are different. Although the reason for this will be described later, since the positions in the height direction are different from each other in this way, considering that the circuits 22 and 38 are connected by a first connection conductor such as a wire, the first The length of the connecting conductor is increased. As a result, the inductance (or resistance, radiation loss) in the first connection conductor is increased.

  In general, the wirings 28a and 28b and the pad electrode 28c of the first electromagnetic coupling circuit 22 are designed to have an impedance of 50Ω, and the first external signal line 37 of the external input circuit 38 is similarly 50Ω. It is designed to have an impedance of On the other hand, when the first connecting conductor that connects the pad electrode 28c and the first external signal line 37 is a wire, the impedance deviates from 50Ω. As a result, the pad electrode 28c and the first external signal line 37 Impedance mismatch occurs between the two. When the length of the first connection conductor is short, the impedance mismatch is small. However, when the length of the first connection conductor is increased as described above, the impedance mismatch due to the first connection conductor is increased. Reflection loss increases.

  As described above, if the positions of the first electromagnetic coupling circuit 22 and the external input circuit 38 in the height direction are different from each other, the above problem occurs and input loss increases.

  Therefore, on the upper surface of the first electromagnetic coupling circuit 22, a first height adjustment circuit 44 having a first connection wiring 43 that electrically connects the first electromagnetic coupling circuit 22 and the external input circuit 38. Is fixed by, for example, silver nanoparticles. By providing the first height adjustment circuit 44 on the first electromagnetic coupling circuit 22 so as to be electrically connected to the circuit 22, the first connection wiring 43 is connected to the first electromagnetic coupling circuit 22. The pad electrode 28c is electrically extracted to a height position where the external input circuit 38 is disposed. By designing the impedance of the first connection wiring 43 to, for example, 50Ω so as to match the pad electrode 28 c of the first electromagnetic coupling circuit 22 and the first external signal line 37 of the external input circuit 38, This connection wiring 43 can be aligned with the pad electrode 28 c and the first external signal line 37. Since the first connection wiring 43 and the first external signal line 37 of the external input circuit 38 exist at the same height position, the length of a first connection conductor 45 (to be described later) that electrically connects them. The inductance (or resistance, radiation loss) of the first connection conductor 45 can be reduced, and impedance mismatch between the first connection wiring 43 and the first external signal line 37 can be reduced. . As a result, the impedance is discontinuous in the wiring between the first electromagnetic coupling circuit 22 and the external input circuit 38 (the high-frequency signal line constituted by the first connection wiring 43 and the first connection conductor 45). This can be suppressed.

  FIG. 3A is a perspective view of the first height adjustment circuit applied to the high-frequency semiconductor module according to the first embodiment when viewed obliquely from above. FIG. 3B is a perspective view of the first height adjustment circuit applied to the high-frequency semiconductor module according to the first embodiment when viewed obliquely from below. As shown in FIG. 3A and FIG. 3B, the first height adjustment circuit 44 is connected to the first connection wiring 43 and the ground on the box-shaped first dielectric 60 composed of a cylindrical side wall and a top plate. The metal 51 is provided. The first dielectric 60 is made of, for example, ceramic, alumina, or the like, and the first connection wiring 43 and the ground metal 51 are each made of, for example, a metal thin film such as gold.

  A through hole 92 that penetrates the side wall and the top plate is provided on the side wall of the first dielectric 60. And the inner wall of this through-hole 92 is metallized, and this functions as the wiring 43a. A part of the top surface of the top plate of the first dielectric 60 including the upper end of the through hole 92 is provided with a strip-like wiring 43b connected to the wiring 43a inside the through hole 92. An island-like wiring 43 c connected to the wiring 43 a inside the through hole 92 is provided on a part of the lower surface of the side wall of the first dielectric 60 including the lower end of 92. The first connection wiring 43 includes a wiring 43 a inside the through hole 92, a strip-shaped wiring 43 b on the top surface of the top plate of the first dielectric 60, and an island-shaped wiring on the bottom surface of the side wall of the first dielectric 60. 43c.

  On the other hand, the ground metal 51 is provided on the entire surface of the first dielectric 60 so as not to contact the first connection wiring 43.

  FIG. 4 is an exploded perspective view showing the first height adjustment circuit and the first electromagnetic coupling circuit. FIG. 5 is a partial cross-sectional view of the first height adjustment circuit and the first electromagnetic coupling circuit along the one-dot chain line XX ′ in FIG. 4. As shown in FIGS. 4 and 5, the first height adjusting circuit 44 includes an island-like wiring 43 c on the lower surface of the side wall of the first dielectric 60 and a pad electrode on the upper surface of the first electromagnetic coupling circuit 22. The ground metal 51 on the lower surface of the first dielectric 60 is connected to the ground metal 29 on the upper surface of the first electromagnetic coupling circuit 22, for example, silver nanoparticles. It is provided on the first electromagnetic coupling circuit 22 so as to be connected via (not shown). In this way, the first connection wiring 43 of the first height adjustment circuit 44 is electrically connected to the pad electrode 28 c on the upper surface of the first electromagnetic coupling circuit 22.

  The first signal lead wire 45 (FIG. 1) provided on the first connection substrate 49 described later is connected to the strip-like wiring 43b on the top surface of the top plate of the first dielectric 60. A ground lead wire 50 (FIG. 1) to be described later is connected to the ground metal 51 on the top surface of the top plate of the first dielectric 60. As described above, the first connection wiring 43 of the first height adjustment circuit 44 is connected to the first connection lead 43 of the external input circuit 38 via the first signal lead wire 45 on the first connection board 49. It is electrically connected to the external signal line 37.

  By providing the first height adjusting circuit 44 described above on the first electromagnetic coupling circuit 22 so as to match the first electromagnetic coupling circuit 22, an I-shape of the first electromagnetic coupling circuit 22 is provided. The wiring 28a is drawn out to a height position where the external input circuit 38 is disposed. Then, by connecting the first height adjustment circuit 44 and the external input circuit 38 with the first connection conductor 45, the inductance (or resistance, radiation loss) in the first connection conductor 45 can be reduced, Impedance mismatch between the first height adjustment circuit 44 and the external input circuit 38 can be reduced. As a result, impedance mismatch between the first electromagnetic coupling circuit 22 and the external input circuit 38 can be reduced.

  The first height adjusting circuit 44 provided in this way is configured to be a back short circuit between the lead-out wiring 28b and the I-shaped wiring 28a on the upper surface of the first electromagnetic coupling circuit 22. That is, as shown in FIG. 5, the height H of the side wall of the first dielectric 60 (the length H from the lower end of the side wall to the bottom surface of the top plate) is the lead wire 28b of the first electromagnetic coupling circuit 22 and the I-shape. The high-frequency signal transmitted through the wire 28a is suppressed from being radiated to the space S surrounded by the ground metal 51 on the inner surface of the first dielectric 60. Therefore, it is possible to suppress loss in the high-frequency signal lead-out wiring 28b and the I-shaped wiring 28a.

  Here, when the wavelength of the high-frequency signal is λ and the height H is λ / 4, the radiation of the high-frequency signal transmitted through the lead-out wiring 28b and the I-shaped wiring 28a into the space S is most suppressed. Is done. Therefore, the first dielectric 60 is configured such that the height H is substantially λ / 4. Here, the fact that the height H is substantially λ / 4 includes a case where the height H is shifted by α from λ / 4 due to a manufacturing error or the like. That is, the fact that the height H is substantially λ / 4 means that H = (λ / 4) ± α.

  Such a structure is the same on the output side. That is, on the upper surface of the second electromagnetic coupling circuit 33, the second height adjustment circuit 47 having the second connection wiring 46 that electrically connects the second electromagnetic coupling circuit 33 and the external output circuit 40. Is fixed by, for example, silver nanoparticles. By providing the second height adjusting circuit 47 on the second electromagnetic coupling circuit 33 so as to be electrically connected in a matched state with the circuit 33, the I-shape of the second electromagnetic coupling circuit 33 is obtained. The wiring 35a is drawn out to a height position where the external output circuit 40 is disposed. Then, by connecting the second height adjustment circuit 47 and the external output circuit 40 with the second connection conductor 48, the length of the second connection conductor 48 can be shortened, and inductance (or resistance, radiation loss) can be reduced. As well as impedance mismatch between the second height adjustment circuit 47 and the external output circuit 40 can be reduced. As a result, impedance mismatch between the second electromagnetic coupling circuit 33 and the external output circuit 40 can be reduced. Further, the second height adjustment circuit 47 is configured to be a back short of the lead-out wiring 35b and the I-shaped wiring 35a on the upper surface of the second electromagnetic coupling circuit 33. Accordingly, loss in the high-frequency signal lead-out wiring 35b and the I-shaped wiring 35a is also suppressed.

  Please refer to FIG. Since the first height adjustment circuit 44 and the external input circuit 38 are provided at the same height, a wire may be applied as the first connection conductor 45 that connects them. However, in the present embodiment, the first signal lead wire 45 provided on the first connection substrate 49 disposed on the outer peripheral surface of the heat insulating container 18 described later is applied as the first connection conductor 45. Has been. The first signal lead wire 45 connects the first connection wiring 43 of the first height adjustment circuit 44 and the first external signal line 37 of the external input circuit 38. Note that ground lead wires 50 are also provided on both sides of the first signal lead wire 45 on the first connection substrate 49, and these ground lead wires 50 have a first height. The ground metal 51 of the adjustment circuit 44 is connected to the ground line 42 of the external input circuit 38.

  Similarly, since the second height adjustment circuit 47 and the external output circuit 40 are provided at the same height, a wire may be applied as the second connection conductor 48 that connects them. However, in this embodiment, the second signal lead wire 48 provided on the second connection substrate 52 disposed on the outer peripheral surface of the heat insulating container 18 described later is applied as the second connection conductor 48. Has been. The second signal lead wire 48 connects the second connection wiring 46 of the second height adjustment circuit 47 and the second external signal line 39 of the external output circuit 40. Note that ground lead wires 53 are also provided on both sides of the second signal lead wire 48 on the second connection substrate 52, and these ground lead wires 53 have a second height. The ground metal 54 of the adjustment circuit 47 and the grounding line 42 of the external output circuit 40 are connected.

  FIG. 6 is a perspective view showing the cooling body 11 and the high-frequency semiconductor device 10 of the high-frequency semiconductor module according to the first embodiment. The high-frequency semiconductor device 10 described above (hereinafter sometimes referred to as the semiconductor device 10) is actually assembled and configured as shown in FIG. Such a semiconductor device 10 is disposed on the cooling body 11. Therefore, the semiconductor device 10 can operate at a low temperature and can improve the NF characteristics.

  FIG. 7 is a perspective view showing a main part of the high-frequency semiconductor module according to the first embodiment configured by providing a heat insulating container in the semiconductor device. FIG. 8 is a cross-sectional view of the entire high-frequency semiconductor module according to the first embodiment, including a cross section taken along the alternate long and short dash line YY ′ of FIG. 7. As shown in FIG. 8, in the high-frequency semiconductor module 100 according to the first embodiment, the semiconductor device 10 disposed on the cooling body 11 is substantially in a vacuum state except for a part thereof. It is covered so that it does not substantially contact the insulated container 18 that is present. The heat insulation container 18 is a metal container comprised, for example by stainless steel (SUS).

  A pipe 55 serving as a flow path for a cooling medium (for example, liquid nitrogen) is provided in the cooling body 11, and the pipe 55 extends from the side surface of the cooling body 11 to the outside. The heat insulating container 18 is fixed to a pipe 55 extending from the cooling body 11 via a heat insulating material 56. That is, the semiconductor device 10 including the cooling body 11 is fixed at a predetermined position in the heat insulating container 18 by the pipe 55. The cooling body 11 may be a so-called refrigerator that actively dissipates heat to the outside.

  As shown in FIGS. 7 and 8, openings 57 are provided at two locations of the heat insulating container 18. The heat insulating container 18 is arranged on the semiconductor device 10 so that each of the first and second height adjusting circuits 44 and 47 is disposed in the opening 57 so as to be separated from the side wall of the opening 57. Is arranged. As shown in FIG. 8, the first and second electromagnetic coupling circuits 22 and 33 are arranged so as to seal the opening 57 of the heat insulating container 18 and are fixed by, for example, silver nanoparticles. By fixing the first and second electromagnetic coupling circuits 22 and 33 in this way, the first and second electromagnetic coupling circuits 22 and 33 are disposed above the internal input circuit 21 and the internal output circuit 32, respectively. The circuits 21 and 32 are arranged apart from each other. Further, by fixing the first and second electromagnetic coupling circuits 22 and 33 in this way, the inside of the heat insulating container 18 is sealed.

  Further, as shown in FIGS. 7 and 8, the first and second connection boards 49 and 52 and the external input / output circuits 38 and 40 are arranged on the outer peripheral surface of the heat insulating container 18 in the vicinity of the opening 57. ing.

  Here, the upper surfaces of the first and second electromagnetic coupling circuits 22 and 33 and the upper surfaces of the external input / output circuits 38 and 40 disposed on the outer peripheral surface of the heat insulating container 18 are of the same height. If the thickness of the heat insulation container 18 is thin, the first and second height adjustment circuits 44 and 47 described above are not necessary. However, if the heat insulating container 18 is made thin in this way, not only a sufficient heat insulating effect is not compensated, but also the mechanical strength of the heat insulating container 18 becomes extremely weak, which may impair the reliability of the high-frequency semiconductor module 100. Therefore, the heat insulation container 18 needs to be comprised with a sufficiently thick metal. As a result, the height positions of the upper surfaces of the first and second electromagnetic coupling circuits 22 and 33 and the upper surfaces of the external input / output circuits 38 and 40 disposed on the outer peripheral surface of the heat insulating container 18 are different. Therefore, as described above, the first and second height adjustment circuits 44 and 47 are required.

  In the high-frequency semiconductor module 100 according to the first embodiment described above, the high-frequency circuit 61 on the base plate 12 constituted by the internal input / output circuits 21 and 32 and the signal processing circuit 13 of the semiconductor device 10, and a heat insulating container 18, the space on the high-frequency circuit 61 and the space around the space are separated electromagnetically in space, and the space on the high-frequency circuit 61 is finely separated in electromagnetic space. In addition, a shield is provided.

  FIG. 9 is a perspective view showing a part of a heat insulating container applied to the high-frequency semiconductor module according to the first embodiment. Note that a part of the heat insulating container illustrated in FIG. 9 is a heat insulating container disposed on the semiconductor device. As shown in FIG. 8 and FIG. 9 described above, a plurality of shields in the high-frequency semiconductor module 100 according to the present embodiment are provided on the inner surface of the heat insulating container 18 so as to extend in the inner direction of the heat insulating container 18. The shielding plates 58 and 62.

  FIG. 10 is a diagram schematically illustrating a positional relationship between the high-frequency circuit and the plurality of shielding plates. As shown in FIG. 10, in the present embodiment, the shielding plate 58 that finely separates the space on the high-frequency circuit 61 in terms of electromagnetic space is provided on the internal input circuit 21, the signal processing circuit 13, and the internal output circuit 32. Are separated from each other in terms of electromagnetic space. In addition, a shielding plate 62 that electromagnetically separates the space on the high-frequency circuit 61 and the space around the space is provided so as to surround the space on the high-frequency circuit 61. In the present embodiment, the shielding plate 58 is not provided to electromagnetically separate the space on the signal processing circuit 13 and the space on the internal output circuit 32. However, the shielding plate 58 may be provided to electromagnetically separate the space on the internal input circuit 21, the space on the signal processing circuit 13, and the space on the internal output circuit 32 from each other.

  On the other hand, as shown in FIG. 10 and the like, a plurality of grooves 59 are provided at predetermined positions of the base plate 12. Each groove 59 is a place where the shielding plates 58 and 62 are inserted. Therefore, the plurality of grooves 59 are provided at predetermined locations on the base plate 12 according to the locations where the shielding plates 58 and 62 are provided.

  In the present embodiment, the grooves 59 are formed in the base plate 12 between the internal input circuit 21 and the signal processing circuit 13 and at a plurality of locations substantially surrounding the high-frequency circuit 61 according to the positions of the shielding plates 58 and 62. Is provided.

  As shown in FIG. 8, the heat insulating container 18 is arranged so that the shielding plates 58 and 62 are inserted into the grooves 59 of the base plate 12 so as not to contact the grooves 59. By disposing the heat insulating container 18 having the shielding plates 58 and 62 in this way, the space on the high-frequency circuit 61 and the space around this space can be obtained without contacting the heat insulating container 18 and the semiconductor device 10. The space on the high-frequency circuit 61 is separated in terms of electromagnetic space and finely separated in terms of electromagnetic space.

  According to the high-frequency semiconductor module 100 according to the first embodiment described above, the space on the high-frequency circuit 61 and the space between the high-frequency circuit 61 on the base plate 12 and the inner surface of the heat insulating container 18. Is provided with a shielding plate 62 that separates the surrounding space in an electromagnetic space. Therefore, it is possible to suppress a high frequency signal from being released from the space on the high frequency circuit 61 to the surrounding space.

  A shielding plate 58 is provided between the high-frequency circuit 61 on the base plate 12 and the inner surface of the heat insulating container 18 so as to finely separate the space on the high-frequency circuit 61 in terms of electromagnetic space. Accordingly, it is possible to suppress the high-frequency signals from being spatially propagated and affecting each other among a plurality of circuits included in the high-frequency circuit 61 (between the internal input circuit 21, the signal processing circuit 13, and the internal output circuit 32). Can do.

  Since the space between the high-frequency circuit 61 on the base plate 12 and the inner surface of the heat insulating container 18 is finely separated electromagnetically as described above, the resonance frequency of this space is ignored in the used frequency band. It can be as high as possible. Therefore, even if a high frequency signal is emitted into the space and resonance occurs, deterioration of characteristics of the high frequency semiconductor module 100 due to resonance can be suppressed.

  Therefore, the high-frequency semiconductor module 100 can be improved in performance.

  Further, according to the high frequency semiconductor module 100 according to the first embodiment, the heat insulating container 18 including the shielding plates 58 and 62 described above is arranged so as not to contact the semiconductor device 10. Therefore, it is possible to suppress heat from flowing into the semiconductor device 10 from the heat insulating container 18 through the shielding plates 58 and 62.

<Second Embodiment>
FIG. 11 is a cross-sectional view of the entire high-frequency semiconductor module according to the second embodiment corresponding to FIG. As shown in FIG. 11, the high-frequency semiconductor module 200 according to the second embodiment differs from the high-frequency semiconductor module 100 according to the first embodiment in the configuration of the shield. Below, with reference to FIG. 11, the shielding body applied to the high frequency semiconductor module 200 which concerns on 2nd Embodiment is demonstrated. In the following description, the same parts as those of the high-frequency semiconductor module 100 according to the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 11, the shield applied to the high-frequency semiconductor module 200 according to the second embodiment is a shield provided in the same manner as the shielding plates 58 and 62 of the high-frequency semiconductor module 100 according to the first embodiment. It is comprised by the board 71,72 and the metal body 73 provided in this lower end so that the lower end of the groove | channel 59 may be contacted.

  FIG. 12 is a diagram schematically illustrating the positional relationship between the shielding plate and the metal body. As shown in FIG. 12, the metal body 73 is provided at the lower ends of the shielding plates 71 and 72 so that the distance between them is substantially λ / 4. By providing the plurality of metal bodies 73 in this manner, the gap between the groove 59 and the shielding plates 71 and 72 is separated in an electromagnetic space, so that the performance of the shielding body can be improved. This will be described in more detail below.

  FIG. 13 is an enlarged cross-sectional view of the shielding plate and the metal body. As shown in FIG. 13, the metal body 73 is provided such that one end thereof is in contact with the lower end of the shielding plate 71 and the other end is in contact with the lower end of the groove 59. Thus, the metal body 73 electromagnetically separates the gap between the shielding plate 71 and the groove 59. Although not shown in the drawings, the metal body 73 is provided such that one end thereof is in contact with the lower end of the shielding plate 72 and the other end is in contact with the lower end of the groove 59. 73 electromagnetically separates the gap between the shielding plate 72 and the groove 59.

  Here, if the metal body 73 does not exist, the gap between the groove 59 and the shielding plates 71 and 72 is continuous in electromagnetic space. Therefore, when the metal body 73 does not exist at the lower end of the shielding plate 71, for example, the space on the internal input circuit 21 and the space on the signal processing circuit 13 communicate with each other through the gap between the groove 59 and the shielding plate 71. To do. Further, when the metal body 73 is not present at the lower end of the shielding plate 72, the space on the high frequency circuit 61 and the surrounding space communicate with each other through the gap between the groove 59 and the shielding plate 72. Thus, when the metal body 73 is not present at the lower ends of the shielding plates 71 and 72, the reliability of electromagnetic spatial separation by the shielding plates 71 and 72 is lowered (performance as a shielding body is lowered).

  However, by providing the metal body 73 at the lower ends of the shielding plates 71 and 72, the gap between the groove 59 and the shielding plates 71 and 72 is separated electromagnetically, so that the performance as a shielding body can be improved. .

  Here, if the distance between the metal bodies 73 is narrower than λ, the gap between the groove 59 and the shielding plates 71 and 72 can be separated electromagnetically. However, the smaller the distance between the metal bodies 73, the more effective the effect is. Get higher. However, as the interval between the metal bodies 73 is narrowed, the number of metal bodies 73 to be provided increases, so that the amount of heat flowing through these metal bodies 73 increases. Therefore, in order to suppress the inflow amount of heat through the metal body 73 and sufficiently separate the gap between the groove 59 and the shielding plates 71 and 72 electromagnetically, in the present embodiment, the metal body 73 is: The distance between each other is substantially λ / 4. Note that λ / 4 substantially includes a case where the interval between the metal bodies 73 is shifted by β from the design value λ / 4 due to manufacturing errors such as the placement accuracy of the metal bodies 73. Therefore, substantially λ / 4 means (λ / 4) ± β.

  Such a metal body 73 may be anything as long as it is configured to have the same potential (ground potential) as the shielding plates 72, 72. In the present embodiment, the metal body 73 is, for example, a thread-like metal A metal spring 73 configured by winding is applied. The metal spring 73 is made of a metal material having poor thermal conductivity, such as stainless steel (SUS). Thereby, the thermal resistance of the metal body 73 can be made high, and it can suppress that heat flows in from the metal body 73 through the heat insulation container 18 and the shielding plates 71 and 72.

  In the present embodiment, a groove 74 is provided at the lower end of the shielding plate 71, and a metal body 73 (for example, a metal spring 73) is provided inside the groove 74. Although illustration is omitted, a groove is similarly provided at the lower end of the shielding plate 72, and a metal body 73 (for example, a metal spring 73) is provided in the groove. As described above, the grooves 74 are provided at the lower ends of the shielding plates 71 and 72, and the metal bodies 73 (for example, the metal springs 73) are provided in the grooves 74, whereby the lower ends of the shielding plates 71 and 72 and the grooves of the semiconductor device 10 are provided. The distance from the lower end of 59 can be lengthened, and the inflow of heat from the shielding plates 71 and 72 can be further suppressed.

  Also in the high-frequency semiconductor module 200 according to the second embodiment described above, similarly to the shielding plates 58 and 62 of the high-frequency semiconductor module 100 according to the first embodiment, the insulating plates 18 are provided with the shielding plates 71 and 72. It has been. Therefore, similarly to the high-frequency semiconductor module 100 according to the first embodiment, the high-frequency semiconductor module 200 can be improved in performance.

  Furthermore, according to the high-frequency semiconductor module 200 according to the second embodiment, the metal body 73 that electromagnetically separates the gap between the shielding plates 71 and 72 and the groove 59 at the lower end of the shielding plates 71 and 72. Is provided. Therefore, the reliability of the electromagnetic spatial separation between the space on the high-frequency circuit 61 and the surrounding space can be improved, and the reliability of the electromagnetic spatial subdivision of the space on the high-frequency circuit 61 can be improved. .

  In the high-frequency semiconductor module 200 according to the second embodiment, the shielding plates 71 and 72 of the heat insulating container 18 and the semiconductor device 10 are in contact with each other through the metal body 73. Such a contact region is locally present. Since this is a very narrow area, the inflow of heat through the metal body 73 can be almost ignored. If it cannot be ignored, a groove 74 is provided at the lower end of the shielding plates 71 and 72, and a metal spring 73 made of a metal having poor thermal conductivity such as SUS is provided as a metal body 73 in the groove 74. The inflow of heat from the heat insulating container 18 to the semiconductor device 10 may be suppressed.

<Third Embodiment>
FIG. 14 is a perspective view corresponding to FIG. 9 and showing a part of a heat insulating container applied to the high-frequency semiconductor module according to the third embodiment. FIG. 15 is a cross-sectional view of the entire high-frequency semiconductor module according to the third embodiment corresponding to FIG. As shown in FIGS. 14 and 15, the high-frequency semiconductor module 300 according to the third embodiment is different in the configuration of the shield from the high-frequency semiconductor module 100 according to the first embodiment. Below, with reference to FIG. 14 and FIG. 15, the shielding body applied to the high frequency semiconductor module 300 which concerns on 3rd Embodiment is demonstrated. In the following description, the same parts as those of the high-frequency semiconductor module 100 according to the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 14, in the high-frequency semiconductor module 300 according to the third embodiment, no shielding plate is provided on the inner surface of the heat insulating container 81. Therefore, as shown in FIG. 15, the base plate 83 is not provided with a groove. As shown in FIGS. 14 and 15, the shield applied to the high-frequency semiconductor module 300 according to the third embodiment is provided between the inner surface of the heat insulating container 81 and the high-frequency circuit 61 and the base plate 83. The plurality of metal bodies 82 are included. One end of each metal body 82 is in contact with the inner surface of the heat insulating container 81, and the other end is in contact with the high frequency circuit 61 or the base plate 83.

  FIG. 16 is a diagram schematically illustrating the positional relationship between the high-frequency circuit, the base plate, and the metal body. As shown in FIG. 16, the metal body 82 is provided on the base plate 83 so as to surround the entire high-frequency circuit 61, and the internal input circuit 21 and the signal processing circuit 13 are provided on the base plate 83 and the high-frequency circuit 61. And the internal output circuit 32 are provided so as to surround each of them. For the same reason as the arrangement interval of the metal bodies 73 of the second embodiment, the plurality of metal bodies 82 are provided so that the interval between them is substantially λ / 4. By providing a plurality of metal bodies 82 in this way, the space on the high-frequency circuit 61 and the space around the space can be separated electromagnetically, and the space on the high-frequency circuit 61 is electromagnetically separated. Can be subdivided spatially.

  Such a metal body 82 may be anything as long as it is configured to have the same potential (ground potential) as the heat insulating container 81, but as shown in FIG. A metal spring 82 made of a metal material having poor thermal conductivity, such as stainless steel (SUS), is applied. Thereby, the thermal resistance of the metal body 82 can be increased, and heat can be prevented from flowing into the semiconductor device 10 from the heat insulating container 81 through the metal body 82.

  When the metal spring 82 is applied as the metal body 82, the uppermost turn is fixed to the shallow groove 84 provided at a predetermined position on the inner surface of the heat insulating container 81, and the lowermost turn is the high-frequency circuit 61 or It is provided so as to contact the base plate 83.

  The metal spring applied as the metal body 82 may be a metal spring 82 having a constant outer diameter as shown in FIG. 17A, but is fixed to the groove 84 of the heat insulating container 81 as shown in FIG. 17B. Alternatively, a metal spring 82 ′ whose outer diameter changes from one end to the other end may be used. In this case, the other end with a small diameter of the metal spring 82 ′ contacts the signal processing circuit 13, but since the contact area between both is small, heat transfer here can be suppressed.

  Further, as shown in FIG. 17C, the metal spring applied as the metal body 82 has a small outer diameter that changes from one end fixed to a groove 84 ′ formed in a part of the base plate 83 toward the other end. A metal spring 82 '' may be used. In this case, the other end with a small diameter of the metal spring 82 ″ is in contact with the heat insulating container 81. However, since the contact area between the two is small, heat transfer here can be suppressed.

  In the high-frequency semiconductor module 300 according to the third embodiment described above, the space on the high-frequency circuit 61 and the space around this space between the base plate 83 and the inner surface of the heat insulating container 81, A plurality of metal bodies 82 are provided so as to separate them in electromagnetic space. Therefore, it is possible to suppress a high frequency signal from being released from the space on the high frequency circuit 61 to the surrounding space.

  A plurality of metal bodies 82 are provided between the base plate 83 and the high-frequency circuit 61 and the inner surface of the heat insulating container 18 so as to finely separate the space on the high-frequency circuit 61 in terms of electromagnetic space. Therefore, the high-frequency signals are spatially propagated between a plurality of circuits included in the high-frequency circuit 61 (between the internal input circuit 21, the signal processing circuit 13, and the internal output circuit 32) and affect each other. Can be suppressed.

  Since the space between the base plate 83 and the high frequency circuit 61 and the inner surface of the heat insulating container 18 is finely separated electromagnetically as described above, the resonance frequency of this space can be ignored in the use frequency band. Can be as high as possible. Therefore, even if a high frequency signal is emitted into the space and resonance occurs, deterioration of characteristics of the high frequency semiconductor module 300 due to resonance can be suppressed.

  Therefore, the high-frequency semiconductor module 300 can be improved in performance.

  Furthermore, according to the high-frequency semiconductor module 300 according to the third embodiment, the heat insulating container 81 is not provided with a shielding plate, and the base plate 83 is not provided with a groove. Therefore, inflow of heat from the heat insulating container 81 to the semiconductor device 10 can be further suppressed as compared with the high-frequency semiconductor module 100 according to the first embodiment.

  That is, in the high-frequency semiconductor module 100 according to the first embodiment, the heat insulating container 18 and the semiconductor device 10 are close to each other in the gap between the shielding plates 58 and 62 of the heat insulating container 18 and the groove 59 of the base plate 12. . And such a proximity | contact area | region substantially corresponds to the surface area of the shielding plates 58 and 62, and is wide. As described above, in the high-frequency semiconductor module 100 according to the first embodiment, the shielding plates 58 and 62 of the heat insulating container 18 and the semiconductor device 10 are not in contact with each other, but the proximity region exists and the region is wide. There is a concern that such a proximity region becomes a heat inflow path.

  However, in the high-frequency semiconductor module 300 according to the third embodiment, as described above, the heat insulating container 81 is not provided with a shielding plate, and the base plate 83 is not provided with a groove. Therefore, there is no region where the heat insulating container 81 and the semiconductor device 10 are close to each other. The heat insulating container 81, the base plate 83, and the high-frequency circuit 61 are in contact with each other via a plurality of metal bodies 82. However, since the contact area is only a local narrow area, the heat insulating container 81 is connected to the semiconductor device 10. The inflow of heat through the metal body 82 is suppressed. Therefore, inflow of heat from the heat insulating container 81 to the semiconductor device 10 can be further suppressed as compared with the high-frequency semiconductor module 100 according to the first embodiment. By applying a metal spring 82 made of a metal having poor thermal conductivity such as SUS as the metal body 82, the inflow of heat from the heat insulating container 81 to the semiconductor device 10 can be further suppressed.

<Fourth Embodiment>
FIG. 18 is a cross-sectional view of the entire high-frequency semiconductor module according to the fourth embodiment, corresponding to FIG. As illustrated in FIG. 18, the high-frequency semiconductor module 400 according to the fourth embodiment is different from the high-frequency semiconductor module 300 according to the third embodiment in the configuration of the metal body serving as a shield. Below, with reference to FIG. 18, the shielding body applied to the high frequency semiconductor module 400 which concerns on 4th Embodiment is demonstrated. In the following description, the same parts as those of the high-frequency semiconductor module 300 according to the third embodiment are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 18, the shield applied to the high-frequency semiconductor module 400 according to the fourth embodiment includes a plurality of metal bodies 82 provided between the inner surface of the heat insulating container 81 and the high-frequency circuit 61, and heat insulation. It is comprised by the metal body 91 provided between the inner surface of the container 81 and the base board 83 so that both may be contacted. About the some metal body 82 provided between the inner surface of the heat insulation container 81 and the high frequency circuit 61, since it is the same as that of the high frequency semiconductor module 300 which concerns on 3rd Embodiment, description is abbreviate | omitted here and it demonstrates below. The metal body 91 provided between the inner surface of the heat insulating container 81 and the base plate 83 will be described.

  FIG. 19 is a diagram schematically illustrating the positional relationship between the high-frequency circuit, the base plate, and the metal body. As shown in FIG. 19, a single metal body 91 is provided on the base plate 83 around the high-frequency circuit 61 so as to surround the circuit 61. The plurality of metal bodies 82 provided between the inner surface of the heat insulating container 81 and the high frequency circuit 61 are provided at positions substantially separated from the single metal body 91 by λ / 4. By providing the plurality of metal bodies 82 and 91 as described above, the space on the high-frequency circuit 61 and the space around the space can be separated electromagnetically, and the space on the high-frequency circuit 61 is also provided. Can be subdivided electromagnetically.

  In particular, the metal body 91 may be anything as long as it is configured to have the same potential (ground potential) as the heat insulating container 81. However, as shown in FIG. A long metal spring 91 is applied.

  Also in the high-frequency semiconductor module 400 according to the fourth embodiment described above, the space on the high-frequency circuit 61 and the space around this space between the base plate 83 and the inner surface of the heat insulating container 81, Are separated from each other in electromagnetic space. Therefore, it is possible to suppress a high frequency signal from being released from the space on the high frequency circuit 61 to the surrounding space.

  A plurality of metal bodies 82 are provided between the base plate 83 and the high-frequency circuit 61 and the inner surface of the heat insulating container 18 so as to finely separate the space on the high-frequency circuit 61 in terms of electromagnetic space. Therefore, the high-frequency signals are spatially propagated between a plurality of circuits included in the high-frequency circuit 61 (between the internal input circuit 21, the signal processing circuit 13, and the internal output circuit 32) and affect each other. Can be suppressed.

  Since the space between the base plate 83 and the high frequency circuit 61 and the inner surface of the heat insulating container 18 is finely separated electromagnetically as described above, the resonance frequency of this space can be ignored in the use frequency band. Can be as high as possible. Therefore, even if a high frequency signal is emitted into the space and resonance occurs, deterioration of characteristics of the high frequency semiconductor module 400 due to resonance can be suppressed.

  Therefore, the high-frequency semiconductor module 400 can be improved in performance.

  In the high-frequency semiconductor module 400 according to the fourth embodiment, the heat insulating container 81, the base plate 83, and the high-frequency circuit 61 are in contact with each other via the plurality of metal bodies 82 and the metal bodies 91. Since it is only a local narrow region, the inflow of heat from the heat insulating container 81 to the semiconductor device 10 through the metal bodies 82 and 91 is suppressed. Therefore, similarly to the high-frequency semiconductor module 300 according to the third embodiment, the inflow of heat from the heat insulating container 81 to the semiconductor device 10 can be suppressed. By applying the metal springs 82 and 91 made of a metal having poor thermal conductivity such as SUS as the metal bodies 82 and 91, the inflow of heat from the heat insulating container 81 to the semiconductor device 10 can be further suppressed. .

  Furthermore, according to the high-frequency semiconductor module 400 according to the fourth embodiment, the high-frequency circuit 61 is surrounded by one long metal body 91. Therefore, as compared with the high-frequency semiconductor module 300 according to the third embodiment, the reliability of electromagnetic spatial separation between the space on the high-frequency circuit 61 and the surrounding space can be improved.

  Although the embodiment of the present invention has been described above, this embodiment is presented as an example and is not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  For example, the ground metal 51 of the first height adjustment circuit may not be provided on the inner surface of the first dielectric 60. Further, a dielectric may be further provided inside the first dielectric 60. Further, the shape of the first dielectric is not limited to a box shape, and may be a cylindrical shape or a plate shape. Furthermore, the first connection wiring 43 may not be provided so as to penetrate the first dielectric 60, and may be provided on the surface of the first dielectric, for example. Thus, the structure of the first height adjustment circuit is not limited to the structure described above. The same applies to the structure of the second height adjustment circuit.

  Depending on the structure of the first and second height adjustment circuits, the first and second electromagnetic coupling circuits 22 and 33 may not have an electromagnetic shielding effect. The first and second electromagnetic coupling circuits 22 and 33 may be provided with electromagnetic shields.

  Further, although a superconducting circuit is used for the internal input circuit 21 and the internal output circuit 32 is provided integrally with the signal processing circuit 13, a superconducting circuit may be used for the internal output circuit 32 together with the internal input circuit 21. Alternatively, the internal input circuit 21 may be provided integrally with the signal processing circuit 13 and a superconducting circuit may be used only for the internal output circuit 32.

  The internal input circuit 21, the signal processing circuit 13, and the internal output circuit 32 are each disposed on the base plate 12, and are fixed to the base plate 12 by being pressed from above by a fixture 25. Each circuit 21, 13, 32 may be fixed to the base plate 12 with an adhesive or the like.

10 ... High-frequency semiconductor device (semiconductor device)
DESCRIPTION OF SYMBOLS 11 ... Cooling body 12, 83 ... Base board 13 ... Signal processing circuit 14 ... Insulating substrate 15 ... High frequency semiconductor element (semiconductor element)
16 ... branch / matching line 17 ... synthesis / matching circuit 18, 81 ... heat insulation container 19 ... (first) electromagnetic coupling part 20 ... (second) electromagnetic coupling part 21- ..Internal input circuit 22 ... first electromagnetic coupling circuit 23 ... superconducting substrate 24 ... wiring 25 ... fixing tool 26 ... connecting conductor 27 ... insulating substrate 28a ... I Character-like wiring 28b ... leading wiring 28c ... pad electrode 29 ... ground metal 30 ... ground metal 31 ... through hole 32 ... internal output circuit 33 ... second electromagnetic coupling Circuit 34 ... Wiring 35a ... I-shaped wiring 35b ... Lead-out wiring 35c ... Pad electrode 36 ... Ground metal 37 ... First external signal line 38 ... External input circuit 39 ... second external signal line 40 ... external output circuit 41 ... insulating substrate 42 · Grounding line 43 ... first connecting wires 43a, 43b, 43c ··· wiring 44 ... first height adjustment circuit 45 ... first connecting conductor (first lead)
46 ... second connection wiring 47 ... second height adjustment circuit 48 ... second connection conductor (second lead wire)
49... First connection substrate 50... Ground lead wire 51... Ground metal 52... Second connection substrate 53... Ground lead wire 54. .... Pipe 56 ... Insulator 57 ... Openings 58, 62, 71, 72 ... Shielding plate 59 ... Groove 60 ... First dielectric 61 ... High frequency circuit 73, 82 , 82 ′, 82 ″, 91... Metal body (metal spring)
74 ... grooves 84, 84 '... grooves 92 ... through holes 100, 200, 300, 400 ... high frequency semiconductor modules

Claims (10)

A cooling body;
A high-frequency semiconductor device having a high-frequency circuit disposed on the cooling body and including a signal processing circuit that performs signal processing on a high-frequency signal on a surface;
A heat insulating container that houses the cooling body and the high-frequency semiconductor device;
A plurality of shields provided between a high-frequency semiconductor device including the high-frequency circuit and an inner surface of the heat insulating container;
Comprising
The plurality of shields are provided so as to electromagnetically separate the space on the high-frequency circuit and the surrounding space, and to separate the space on the high-frequency circuit into a plurality of electromagnetic spaces. A featured high-frequency semiconductor module. The high-frequency circuit has the signal processing circuit, and an input circuit and an output circuit electrically connected to the signal processing circuit,
The plurality of shields electromagnetically separate the space on the high-frequency circuit and the surrounding space, and at least electromagnetically separate the space on the input circuit and the space on the signal processing circuit. The high frequency semiconductor module according to claim 1, wherein the high frequency semiconductor module is provided. The shield is a shielding plate provided on the inner surface of the heat insulating container,
The high-frequency semiconductor module according to claim 1, wherein the heat insulating container is provided so that the shielding plate is inserted into a groove provided in the high-frequency semiconductor device without being in contact therewith.   The high-frequency semiconductor module according to claim 3, wherein a metal body is provided at a lower end of the shielding plate so as to be in contact with the groove.   The high-frequency semiconductor module according to claim 4, wherein the metal body is a metal spring.   3. The high-frequency semiconductor module according to claim 1, wherein the shielding body is a metal body provided so as to be in contact with an inner surface of the heat insulating container and the high-frequency semiconductor device.   7. The high-frequency semiconductor module according to claim 6, wherein the plurality of metal bodies are arranged at an interval of substantially [lambda] / 4, where [lambda] is the wavelength of the high-frequency signal.   The high-frequency semiconductor module according to claim 7, wherein each of the plurality of metal bodies is a metal spring.   The metal body that electromagnetically separates the space on the high-frequency circuit and the surrounding space from each other is provided such that one end thereof is in contact with the inner surface of the heat insulating container and the other end is in contact with the high-frequency semiconductor device. The high-frequency semiconductor module according to claim 8, wherein the plurality of metal springs are provided.   The metal body that electromagnetically separates the space on the high-frequency circuit and the surrounding space from each other is a single metal spring provided so as to surround the high-frequency circuit. Item 9. The high-frequency semiconductor module according to Item 8.

Images