JP2016149418A - Magnetic sensor - Google Patents
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- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 8
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 7
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- 229910052737 gold Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 4
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- -1 silicon oxide aluminum Chemical compound 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- YAIQCYZCSGLAAN-UHFFFAOYSA-N [Si+4].[O-2].[Al+3] Chemical compound [Si+4].[O-2].[Al+3] YAIQCYZCSGLAAN-UHFFFAOYSA-N 0.000 claims description 2
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- Electrodes Of Semiconductors (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Description
本発明は、磁気センサに関し、特に、電極パッド間の信頼性の向上に適用して好適な磁気センサに関する。 The present invention relates to a magnetic sensor, and more particularly to a magnetic sensor suitable for application to improvement in reliability between electrode pads.
たとえば、引用文献１には、電磁波ノイズの侵入防止、外的衝撃からの保護、防水性、防食性の確保を目的とした磁気センサが開示されている。引用文献１において、磁気センサが、基板と、基板表面に形成され、外部磁界に応じて抵抗値が変化する感磁素子を有する磁気回路部と、磁気回路部を被覆する第１の無機膜と、第１の無機膜を被覆する第１の有機樹脂層と、感磁領域に対して外部電磁波を遮断するように、第１の有機樹脂層の表面に形成された非磁性導電膜と、非磁性導電膜を被覆する第２の有機樹脂膜と、第２の有機樹脂膜の表面に形成された第２の無機膜とを備えることが開示されている。 For example, Patent Document 1 discloses a magnetic sensor for the purpose of preventing electromagnetic noise from entering, protecting from external impact, waterproofing, and corrosion resistance. In Cited Document 1, a magnetic sensor includes a substrate, a magnetic circuit unit that is formed on the surface of the substrate and has a magnetosensitive element whose resistance value changes according to an external magnetic field, and a first inorganic film that covers the magnetic circuit unit. A first organic resin layer covering the first inorganic film, a nonmagnetic conductive film formed on the surface of the first organic resin layer so as to block external electromagnetic waves with respect to the magnetosensitive region, It is disclosed that a second organic resin film covering a magnetic conductive film and a second inorganic film formed on the surface of the second organic resin film are disclosed.
磁気センサを、たとえば車載用途のような衝撃または振動が加わる環境下で用いようとすると、高い信頼性を確保するために、磁気抵抗効果素子等の感磁素子に加わる衝撃または振動を緩和する必要がある。衝撃緩和手段として、特許文献１に記載の磁気センサのように、感磁素子を柔軟な有機樹脂層で覆う手段が考えられる。しかし、本発明者らの実験検討によれば、感磁素子を単に有機樹脂層で覆うのみでは、以下に説明するような問題があることが判明した。 When using a magnetic sensor in an environment where shock or vibration is applied, for example, for in-vehicle applications, it is necessary to mitigate the shock or vibration applied to the magnetosensitive element such as a magnetoresistive element in order to ensure high reliability. There is. As the impact relaxation means, a means for covering the magnetosensitive element with a flexible organic resin layer, such as the magnetic sensor described in Patent Document 1, can be considered. However, according to the experimental study by the present inventors, it has been found that simply covering the magnetosensitive element with an organic resin layer has the following problems.
すなわち、感磁素子を外部取り出し配線に接続するためには電極パッドが必要であり、当該電極パッドの形成に通常用いられるメッキ法を実施するには、感磁素子をシリコン酸化物等の無機物からなる無機保護層で覆う必要がある。よって、衝撃緩和のための有機樹脂層（有機保護層）は、当該無機保護層の上に形成されることになる。 That is, an electrode pad is required to connect the magnetosensitive element to the external lead-out wiring, and in order to carry out the plating method normally used for forming the electrode pad, the magnetosensitive element is made of an inorganic material such as silicon oxide. It is necessary to cover with an inorganic protective layer. Therefore, the organic resin layer (organic protective layer) for impact relaxation is formed on the inorganic protective layer.
ところが、本発明者らの検討によると、上記無機保護層と有機保護層との接着性が良好でなく、基板（ダイチップ）の全体をエポキシ樹脂等モールド材で囲んだとしても、無機保護層と有機保護層との界面において水分によるリーク電流チャネルが形成され、当該リーク電流により、電極パッドを構成する金属のエレクトロマイグレーションが発生していることを本発明者らは認識した。エレクトロマイグレーションが発生すると、電極パッドを構成する金属のデンドライト（樹枝状結晶）が成長し、電極パッド間の絶縁性能を大きく低下させる恐れが生じる。つまり、無機保護層と有機保護層との接着性の劣化に起因して、磁気センサの信頼性を大きく低下させる可能性があることを本発明者らは認識した。 However, according to the study by the present inventors, the adhesion between the inorganic protective layer and the organic protective layer is not good, and even if the entire substrate (die chip) is surrounded by a mold material such as an epoxy resin, The present inventors have recognized that a leakage current channel due to moisture is formed at the interface with the organic protective layer, and the leakage current causes electromigration of the metal constituting the electrode pad. When electromigration occurs, the metal dendrite (dendritic crystal) that constitutes the electrode pads grows, and there is a risk that the insulation performance between the electrode pads is greatly reduced. That is, the present inventors have recognized that there is a possibility that the reliability of the magnetic sensor may be greatly reduced due to the deterioration of the adhesion between the inorganic protective layer and the organic protective layer.
本発明の目的は、感磁素子に対する耐衝撃性を確保しつつ、電極パッド間のエレクトロマイグレーションに起因する信頼性の低下を生じない磁気センサを提供することにある。 An object of the present invention is to provide a magnetic sensor that does not cause a decrease in reliability due to electromigration between electrode pads while ensuring impact resistance to a magnetosensitive element.
上記課題を解決するために、本発明の第１の態様においては、基板と、前記基板の複数の板面のうち少なくとも一つの板面に配置された磁気抵抗効果素子と、前記磁気抵抗効果素子が配置された素子配置面に配置され、前記磁気抵抗効果素子に電気的に接続された第１電極および第２電極と、前記基板の前記素子配置面の側に位置する有機保護層と、を有し、前記素子配置面を平面視した場合の前記第１電極と前記第２電極との間に、前記第１電極または前記第２電極に含まれる材料のエレクトロマイグレーションを阻害する阻害部を有する磁気センサを提供する。 In order to solve the above problems, in the first aspect of the present invention, a substrate, a magnetoresistive effect element disposed on at least one plate surface of the plurality of plate surfaces of the substrate, and the magnetoresistive effect device A first electrode and a second electrode electrically connected to the magnetoresistive element, and an organic protective layer located on the element placement surface side of the substrate, And having an inhibition part that inhibits electromigration of the material contained in the first electrode or the second electrode between the first electrode and the second electrode when the element arrangement surface is viewed in plan A magnetic sensor is provided.
前記基板、前記磁気抵抗効果素子および前記有機保護層を含む面で断面視した場合の前記磁気抵抗効果素子と前記有機保護層との間に位置し、かつ、前記素子配置面を平面視した場合の前記第１電極と前記第２電極との間に少なくとも一部が位置する無機保護層と、前記基板、前記磁気抵抗効果素子、前記無機保護層、前記第１電極、前記第２電極および前記有機保護層の全体を覆うモールド樹脂と、をさらに有してもよく、この場合、前記阻害部を、前記無機保護層と接する前記モールド樹脂の一部とすることができる。 When the substrate, the magnetoresistive effect element, and the organic protective layer are located in a cross-sectional view of the plane, and the element arrangement surface is viewed in plan view An inorganic protective layer at least partially located between the first electrode and the second electrode, the substrate, the magnetoresistive element, the inorganic protective layer, the first electrode, the second electrode, and the It may further include a mold resin that covers the entire organic protective layer. In this case, the inhibition portion can be a part of the mold resin that is in contact with the inorganic protective layer.
前記阻害部を、前記無機保護層と接する前記モールド樹脂の一部とする場合、たとえば、前記阻害部を構成する前記モールド樹脂が、平面視した場合の前記第１電極と前記第２電極との間の全域または一部において前記無機保護層と接している場合を例示できる。あるいは、前記阻害部を構成する前記モールド樹脂が、前記第１電極と前記無機保護層との接触部または前記第２電極と前記無機保護層との接触部で前記無機保護層と接している場合を例示できる。 When the inhibition part is a part of the mold resin in contact with the inorganic protective layer, for example, the mold resin that constitutes the inhibition part includes the first electrode and the second electrode in a plan view. The case where it contacts the said inorganic protective layer in the whole area or a part between can be illustrated. Alternatively, when the mold resin constituting the inhibition portion is in contact with the inorganic protective layer at a contact portion between the first electrode and the inorganic protective layer or a contact portion between the second electrode and the inorganic protective layer. Can be illustrated.
前記無機保護層の前記モールド樹脂との接触部として、酸化シリコン、窒化シリコン、酸窒化シリコン、酸化アルミニウム、窒化アルミニウム、酸窒化アルミニウム、酸化シリコンアルミニウム、窒化シリコンアルミニウムおよび酸窒化シリコンアルミニウムからなる群から選ばれる１種以上の物質からなるものを挙げることができ、前記モールド樹脂として、エポキシ樹脂からなるものを挙げることができる。 The contact portion of the inorganic protective layer with the mold resin is selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, silicon oxide aluminum, silicon aluminum nitride, and silicon aluminum oxynitride. Examples of the molding resin include one made of one or more selected substances, and examples of the mold resin include an epoxy resin.
前記第１電極または前記第２電極と前記有機保護層との接触を阻止する中間層をさらに有してもよく、この場合、前記阻害部を、平面視した場合の前記第１電極と前記第２電極の間に位置する前記中間層とすることができる。前記中間層として、酸化シリコン、窒化シリコン、酸窒化シリコン、酸化アルミニウム、窒化アルミニウム、酸窒化アルミニウム、酸化シリコンアルミニウム、窒化シリコンアルミニウムおよび酸窒化シリコンアルミニウムからなる群から選ばれる１種以上の物質を挙げることができる。 An intermediate layer that prevents contact between the first electrode or the second electrode and the organic protective layer may be further included. In this case, the first electrode and the first electrode when the inhibitor is viewed in a plan view are provided. The intermediate layer located between two electrodes can be used. Examples of the intermediate layer include one or more substances selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, silicon aluminum oxide, silicon aluminum nitride, and silicon oxynitride. be able to.
前記第１電極または前記第２電極が、Ａｕ、ＡｌおよびＣｕからなる群から選ばれる１種以上の原子を含んでもよい。前記有機保護層として、シリコン樹脂およびポリイミド樹脂からなる群から選ばれる１種以上の樹脂を含むものが例示できる。前記有機保護層および前記無機保護層が、透光性を有するものであってもよい。 The first electrode or the second electrode may include one or more atoms selected from the group consisting of Au, Al, and Cu. Examples of the organic protective layer include those containing one or more kinds of resins selected from the group consisting of silicon resins and polyimide resins. The organic protective layer and the inorganic protective layer may be translucent.
なお、上記の発明の概要は、本発明の必要な特徴の全てを列挙したものではない。また、これらの特徴群のサブコンビネーションもまた、発明となりうる。 It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.
以下、発明の実施の形態を通じて本発明を説明するが、以下の実施形態は特許請求の範囲にかかる発明を限定するものではない。また、実施形態の中で説明されている特徴の組み合わせの全てが発明の解決手段に必須であるとは限らない。 Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.
（実施の形態１）
図１は、磁気センサ１００を示し、（ａ）は平面を、（ｂ）は（ａ）におけるＡ−Ａ線一部断面を示す。（ａ）および（ｂ）において、図面を見やすくするため、一部の部材を省略して示している。
(Embodiment 1)
1A and 1B show a magnetic sensor 100, where FIG. 1A shows a plane, and FIG. 1B shows a partial cross section taken along line AA in FIG. In (a) and (b), in order to make the drawings easy to see, some members are omitted.
磁気センサ１００は、基板１０２、基板酸化層１０４、下地絶縁層１０６、磁気抵抗効果素子１０８、配線層１１０、無機保護層１１２、第１電極１１４、第２電極１１６、有機保護層１１８およびモールド樹脂１２０を有する。 The magnetic sensor 100 includes a substrate 102, a substrate oxide layer 104, a base insulating layer 106, a magnetoresistive effect element 108, a wiring layer 110, an inorganic protective layer 112, a first electrode 114, a second electrode 116, an organic protective layer 118, and a mold resin. 120.
基板１０２は、基板１０２上に形成される、磁気抵抗効果素子１０８、配線層１１０、第１電極１１４または第２電極１１６等の磁気センサ１００を構成する部材の支持基板である。基板１０２は、前記部材を支持できる機械的強度を有する限り、材料、寸法、形状等の機械要素に制限は無い。また、基板１０２の電気的、機械的および化学的な特性、性能にも制限は無い。ただし、基板１０２は、磁気抵抗効果素子１０８の磁気特性に影響を及ぼさない非磁性材料であることが好ましい。基板１０２として、たとえばシリコン基板を例示することができる。 The substrate 102 is a support substrate for members constituting the magnetic sensor 100 such as the magnetoresistive effect element 108, the wiring layer 110, the first electrode 114, or the second electrode 116 formed on the substrate 102. As long as the board | substrate 102 has the mechanical strength which can support the said member, there is no restriction | limiting in mechanical elements, such as a material, a dimension, a shape. Further, there are no restrictions on the electrical, mechanical and chemical characteristics and performance of the substrate 102. However, the substrate 102 is preferably made of a nonmagnetic material that does not affect the magnetic characteristics of the magnetoresistive element 108. An example of the substrate 102 is a silicon substrate.
基板酸化層１０４は、基板１０２としてシリコン基板を採用した場合の表面酸化層である。基板酸化層１０４は、シリコン基板表面の熱酸化により形成できる。基板酸化層１０４を形成することにより、基板１０２の表面に形成される磁気抵抗効果素子１０８と基板１０２との間の電気的絶縁性を確保することができ、基板酸化層１０４の厚さを適切な厚さにすることで、磁気抵抗効果素子１０８、配線層１１０、第１電極１１４および第２電極１１６の浮遊容量を小さくすることができる。基板酸化層１０４は、磁気センサ１００の構成に必須ではなく、基板１０２が絶縁体からなる場合には必要ない。基板１０２が導電体または半導体からなる場合には、基板酸化層１０４を有する方が好ましい。基板酸化層１０４が熱酸化法による酸化シリコンである場合、基板酸化層１０４の厚さとして、１μｍを例示することができる。 The substrate oxide layer 104 is a surface oxide layer when a silicon substrate is employed as the substrate 102. The substrate oxide layer 104 can be formed by thermal oxidation of the silicon substrate surface. By forming the substrate oxide layer 104, electrical insulation between the magnetoresistive effect element 108 formed on the surface of the substrate 102 and the substrate 102 can be ensured, and the thickness of the substrate oxide layer 104 is set appropriately. By using a large thickness, the stray capacitance of the magnetoresistive effect element 108, the wiring layer 110, the first electrode 114, and the second electrode 116 can be reduced. The substrate oxide layer 104 is not essential for the configuration of the magnetic sensor 100 and is not necessary when the substrate 102 is made of an insulator. In the case where the substrate 102 is made of a conductor or a semiconductor, it is preferable to have the substrate oxide layer 104. When the substrate oxide layer 104 is silicon oxide formed by a thermal oxidation method, 1 μm can be exemplified as the thickness of the substrate oxide layer 104.
下地絶縁層１０６は、基板１０２または基板酸化層１０４と磁気抵抗効果素子１０８との間に形成され、基板１０２と基板酸化層１０４との間の電気的絶縁性を確保し、さらに高める。また、下地絶縁層１０６は、磁気抵抗効果素子１０８を経時的化学的変化から保護する。下地絶縁層１０６は、磁気抵抗効果素子１０８との反応性が低い物質で構成されることが好ましく、下地絶縁層１０６の構成物質として、たとえば、酸化アルミニウムを例示することができる。下地絶縁層１０６が酸化アルミニウムからなる場合、下地絶縁層１０６の厚さとして、１００ｎｍを例示することができる。 The base insulating layer 106 is formed between the substrate 102 or the substrate oxide layer 104 and the magnetoresistive effect element 108 to ensure and further improve electrical insulation between the substrate 102 and the substrate oxide layer 104. In addition, the base insulating layer 106 protects the magnetoresistive element 108 from chemical changes with time. The base insulating layer 106 is preferably made of a material having low reactivity with the magnetoresistive effect element 108. As a constituent material of the base insulating layer 106, for example, aluminum oxide can be exemplified. When the base insulating layer 106 is made of aluminum oxide, the thickness of the base insulating layer 106 can be exemplified as 100 nm.
磁気抵抗効果素子１０８は、磁界に応じて抵抗率が変化する感磁素子であり、基板１０２の複数の板面のうち少なくとも一つの板面に配置される。磁気抵抗効果素子１０８として、セルフピン止め型のＧＭＲ（Giant Magneto Resistive effect）素子を例示することができる。セルフピン止め型のＧＭＲ素子である場合、基板１０２の側から順に、シード層、固定磁性層、非磁性材料層、フリー磁性層および保護層の順に積層された積層構造を有することができる。シード層として、ニッケル−鉄−クロム合金あるいはＣｒ等が例示できる。シード層の基板１０２の側にＴａ，Ｈｆ，Ｎｂ，Ｚｒ，Ｔｉ，Ｍｏ，Ｗ等からなる下地層が形成されてもよい。固定磁性層は、第１磁性層と第２磁性層と、第１磁性層及び第２磁性層の間に介在する非磁性中間層との、人工反強磁性（ＡＡＦ（Artificial-AntiFerro magnetic））構造とすることができる。磁性層の各層は、コバルト−鉄合金などの軟磁性材料で形成でき、非磁性中間層は、ＲｕやＲｈ等で構成できる。非磁性材料層は、Ｃｕなどの非磁性材料で形成され、フリー磁性層は、ニッケル−鉄合金などの軟磁性材料で形成できる。保護層としてＴａを例示できる。 The magnetoresistive effect element 108 is a magnetosensitive element whose resistivity changes according to a magnetic field, and is arranged on at least one of the plurality of plate surfaces of the substrate 102. As the magnetoresistive effect element 108, a self-pinned GMR (Giant Magneto Resistive effect) element can be exemplified. In the case of a self-pinned GMR element, it can have a stacked structure in which a seed layer, a pinned magnetic layer, a nonmagnetic material layer, a free magnetic layer, and a protective layer are stacked in this order from the substrate 102 side. Examples of the seed layer include nickel-iron-chromium alloy or Cr. An underlayer made of Ta, Hf, Nb, Zr, Ti, Mo, W, or the like may be formed on the substrate 102 side of the seed layer. The pinned magnetic layer is composed of a first magnetic layer, a second magnetic layer, and a nonmagnetic intermediate layer interposed between the first magnetic layer and the second magnetic layer (AAF (Artificial-AntiFerro magnetic)). It can be a structure. Each layer of the magnetic layer can be made of a soft magnetic material such as a cobalt-iron alloy, and the nonmagnetic intermediate layer can be made of Ru, Rh, or the like. The nonmagnetic material layer can be formed of a nonmagnetic material such as Cu, and the free magnetic layer can be formed of a soft magnetic material such as a nickel-iron alloy. Ta can be exemplified as the protective layer.
配線層１１０は、磁気抵抗効果素子１０８を第１電極１１４および第２電極１１６に接続する。配線層１１０の構成材料として、Ｃｒ等の金属または銅−アルミニウム等の合金を挙げることができる。配線層１１０の厚さは、５０ｎｍ〜１００ｎｍが好ましく、配線層１１０としてＣｒを用いた場合には、厚さを７０ｎｍとすることができる。 The wiring layer 110 connects the magnetoresistive effect element 108 to the first electrode 114 and the second electrode 116. Examples of the constituent material of the wiring layer 110 include a metal such as Cr or an alloy such as copper-aluminum. The thickness of the wiring layer 110 is preferably 50 nm to 100 nm. When Cr is used as the wiring layer 110, the thickness can be set to 70 nm.
無機保護層１１２は、磁気抵抗効果素子１０８および配線層１１０を覆って形成される。すなわち、無機保護層１１２は、基板１０２、磁気抵抗効果素子１０８および有機保護層１１８を含む面で断面視した場合の磁気抵抗効果素子１０８と有機保護層１１８との間に位置し、かつ、素子配置面を平面視した場合の第１電極１１４と第２電極１１６との間に少なくとも一部が位置する。 The inorganic protective layer 112 is formed so as to cover the magnetoresistive effect element 108 and the wiring layer 110. That is, the inorganic protective layer 112 is located between the magnetoresistive effect element 108 and the organic protective layer 118 when viewed in a cross section in the plane including the substrate 102, the magnetoresistive effect element 108, and the organic protective layer 118. At least a portion is located between the first electrode 114 and the second electrode 116 when the arrangement surface is viewed in plan.
無機保護層１１２は、主に、磁気抵抗効果素子１０８への水分や酸素の侵入を阻止し、磁気抵抗効果素子１０８を、環境から受ける経時変化から保護する。また、無機保護層１１２は、第１電極１１４および第２電極１１６をメッキ法で形成する際のメッキ液から磁気抵抗効果素子１０８を保護する。無機保護層１１２は、酸化シリコン、窒化シリコン、酸窒化シリコン、酸化アルミニウム、窒化アルミニウム、酸窒化アルミニウム、酸化シリコンアルミニウム、窒化シリコンアルミニウムおよび酸窒化シリコンアルミニウムからなる群から選ばれる１種以上の物質とすることができる。 The inorganic protective layer 112 mainly prevents moisture and oxygen from entering the magnetoresistive effect element 108 and protects the magnetoresistive effect element 108 from changes over time from the environment. In addition, the inorganic protective layer 112 protects the magnetoresistive effect element 108 from a plating solution used when the first electrode 114 and the second electrode 116 are formed by a plating method. The inorganic protective layer 112 includes one or more substances selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, silicon aluminum aluminum, silicon aluminum nitride, and silicon oxynitride. can do.
無機保護層１１２は、磁気抵抗効果素子１０８との反応性が低い物質で構成されることが好ましく、また、磁気抵抗効果素子１０８に及ぼす応力が低くなるような物質で構成されることが好ましい。反応性が低くなる観点から酸化アルミニウムが例示でき、応力を低くする観点から酸化シリコンを例示することができる。 The inorganic protective layer 112 is preferably made of a material that has low reactivity with the magnetoresistive effect element 108, and is preferably made of a material that reduces the stress exerted on the magnetoresistive effect element 108. Aluminum oxide can be exemplified from the viewpoint of low reactivity, and silicon oxide can be exemplified from the viewpoint of reducing stress.
無機保護層１１２は、２層以上の積層構造とすることができる。無機保護層１１２を２層以上の積層構造とする場合、複数積層のうち磁気抵抗効果素子１０８と接する層を酸化アルミニウム層とし、その他の層を酸化シリコン層または酸窒化シリコン層とすることができる。無機保護層１１２を酸化アルミニウム層と酸化シリコン層との２層構造とする場合、酸化アルミニウム層の厚さを１００ｎｍ〜３００ｎｍ（代表的には２０５ｎｍ）、酸化シリコン層の厚さを１００ｎｍ〜３００ｎｍ（代表的には２３５ｎｍ）とすることができる。 The inorganic protective layer 112 can have a laminated structure of two or more layers. When the inorganic protective layer 112 has a stacked structure of two or more layers, a layer in contact with the magnetoresistive effect element 108 among the plurality of stacked layers can be an aluminum oxide layer, and the other layers can be a silicon oxide layer or a silicon oxynitride layer. . In the case where the inorganic protective layer 112 has a two-layer structure of an aluminum oxide layer and a silicon oxide layer, the thickness of the aluminum oxide layer is 100 nm to 300 nm (typically 205 nm), and the thickness of the silicon oxide layer is 100 nm to 300 nm ( (Typically 235 nm).
第１電極１１４および第２電極１１６は、磁気抵抗効果素子１０８が配置された側の基板１０２の素子配置面に配置され、配線層１１０を介して磁気抵抗効果素子１０８に電気的に接続される。第１電極１１４および第２電極１１６は、磁気抵抗効果素子１０８を外部取り出し配線に接続するための電極パッドであり、ワイアボンディングに必要な程度の厚さを有する。第１電極１１４および第２電極１１６は、後に説明するようにメッキ法で形成され、たとえばＡｕ、ＡｌおよびＣｕからなる群から選ばれる１種以上の原子を含む。第１電極１１４および第２電極１１６がＡｕメッキ法で形成された金膜である場合、第１電極１１４および第２電極１１６の厚さとして２．４μｍを例示することができる。 The first electrode 114 and the second electrode 116 are arranged on the element arrangement surface of the substrate 102 on the side where the magnetoresistive effect element 108 is arranged, and are electrically connected to the magnetoresistive effect element 108 via the wiring layer 110. . The first electrode 114 and the second electrode 116 are electrode pads for connecting the magnetoresistive effect element 108 to an external lead-out wiring, and have a thickness necessary for wire bonding. The first electrode 114 and the second electrode 116 are formed by plating as will be described later, and include one or more atoms selected from the group consisting of, for example, Au, Al, and Cu. When the first electrode 114 and the second electrode 116 are gold films formed by an Au plating method, the thickness of the first electrode 114 and the second electrode 116 can be exemplified as 2.4 μm.
有機保護層１１８は、基板１０２の素子配置面の側に位置する。有機保護層１１８は、磁気抵抗効果素子１０８を衝撃、振動等から保護する耐衝撃層である。有機保護層１１８は、耐衝撃層の要求を満足する限り材料、構造、厚さ等に制限はないが、無機保護層１１２とともに透光性を有しているものであれば、磁気抵抗効果素子１０８の外観検査が容易になり、好ましい。有機保護層１１８として、シリコン樹脂およびポリイミド樹脂からなる群から選ばれる１種以上の樹脂を含むものを例示することができる。 The organic protective layer 118 is located on the element arrangement surface side of the substrate 102. The organic protective layer 118 is an impact resistant layer that protects the magnetoresistive effect element 108 from impact, vibration, and the like. The organic protective layer 118 is not limited in material, structure, thickness, and the like as long as the requirements of the impact resistant layer are satisfied. However, if the organic protective layer 118 has translucency together with the inorganic protective layer 112, the magnetoresistive effect element The appearance inspection 108 is easy and preferable. Examples of the organic protective layer 118 include those containing one or more kinds of resins selected from the group consisting of silicon resins and polyimide resins.
モールド樹脂１２０は、基板１０２、磁気抵抗効果素子１０８、無機保護層１１２、第１電極１１４、第２電極１１６および有機保護層１１８の全体を覆う。モールド樹脂１２０は、基板１０２、磁気抵抗効果素子１０８、無機保護層１１２、第１電極１１４、第２電極１１６および有機保護層１１８の全体を保護する。モールド樹脂１２０として、たとえばエポキシ樹脂を例示することができる。 The mold resin 120 covers the entire substrate 102, the magnetoresistive effect element 108, the inorganic protective layer 112, the first electrode 114, the second electrode 116, and the organic protective layer 118. The mold resin 120 protects the entire substrate 102, the magnetoresistive effect element 108, the inorganic protective layer 112, the first electrode 114, the second electrode 116, and the organic protective layer 118. An example of the mold resin 120 is an epoxy resin.
本実施形態の磁気センサ１００においては、素子配置面を平面視した場合の第１電極１１４と第２電極１１６との間に、第１電極１１４または第２電極１１６に含まれる材料、たとえばＡｕのエレクトロマイグレーションを阻害する阻害部を有する。阻害部として、無機保護層１１２と接するモールド樹脂１２０の一部を例示することができる。なお、第１電極１１４または第２電極１１６にＡｕの他、ＡｌやＣｕが含まれる場合には、阻害部は、Ａｕ、ＡｌまたはＣｕのエレクトロマイグレーションを阻害するものであってもよい。 In the magnetic sensor 100 according to the present embodiment, a material contained in the first electrode 114 or the second electrode 116, for example, Au, between the first electrode 114 and the second electrode 116 when the element arrangement surface is viewed in plan view. It has an inhibitory part that inhibits electromigration. As the inhibition part, a part of the mold resin 120 in contact with the inorganic protective layer 112 can be exemplified. When the first electrode 114 or the second electrode 116 contains Al or Cu in addition to Au, the inhibiting portion may inhibit the electromigration of Au, Al, or Cu.
阻害部である、無機保護層１１２と接するモールド樹脂１２０の一部として、図１（ａ）における領域１２２、すなわち、第１電極１１４と第２電極１１６との間の全域でモールド樹脂１２０が無機保護層１１２と接している領域１２２を例示することができる。 As a part of the mold resin 120 in contact with the inorganic protective layer 112, which is an inhibition part, the mold resin 120 is inorganic in the region 122 in FIG. 1A, that is, in the entire region between the first electrode 114 and the second electrode 116. The region 122 that is in contact with the protective layer 112 can be illustrated.
当該領域１２２が阻害部として機能することは、本発明者らの実験検討による知見により得られたものである。すなわち、従来、第１電極１１４と第２電極１１６との間の全域には有機保護層１１８が形成されており、有機保護層１１８と無機保護層１１２との接着性は良好ではなかった。そのため、有機保護層１１８と無機保護層１１２と界面に水分が侵入し、リーク電流を生じ、結果としてエレクトロマイグレーションが発生して、Ａｕ、Ａｌ、Ｃｕ等のデンドライトが成長し、信頼性を低下させていたことを本発明者らは発見した。そこで、無機保護層１１２とモールド樹脂１２０との接着性が良好であることに鑑み、エレクトロマイグレーションが生じる第１電極１１４と第２電極１１６との間に、無機保護層１１２とモールド樹脂１２０とが直接接触する領域１２２を設け、これを阻害部としたものである。 The fact that the region 122 functions as an inhibitory part has been obtained by knowledge obtained by the present inventors through experiments. That is, conventionally, the organic protective layer 118 is formed in the entire region between the first electrode 114 and the second electrode 116, and the adhesion between the organic protective layer 118 and the inorganic protective layer 112 is not good. Therefore, moisture enters the interface between the organic protective layer 118 and the inorganic protective layer 112, resulting in leakage current, resulting in electromigration, and dendrites such as Au, Al, and Cu grow and reduce reliability. The present inventors have discovered that this was the case. Therefore, in view of the good adhesion between the inorganic protective layer 112 and the mold resin 120, the inorganic protective layer 112 and the mold resin 120 are interposed between the first electrode 114 and the second electrode 116 where electromigration occurs. A region 122 that is in direct contact is provided, and this is used as an obstruction.
本実施形態の磁気センサ１００においては、阻害部である領域１２２を第１電極１１４と第２電極１１６との間に積極的に設けるため、エレクトロマイグレーションが発生せず、結果として、磁気センサ１００の高い信頼性を確保することが可能になる。なお、従来技術において信頼性低下の原因となっていた有機保護層１１８は、その主な目的である磁気抵抗効果素子１０８の耐衝撃性向上のため、磁気抵抗効果素子１０８の上部に従来と同様に配置されている。よって、磁気センサ１００の耐衝撃性は、従来同様確保されている。つまり、本実施形態の磁気センサ１００によれば、磁気抵抗効果素子１０８に対する耐衝撃性を確保しつつ、第１電極１１４と第２電極１１６との間のエレクトロマイグレーションに起因する信頼性の低下を生じない。 In the magnetic sensor 100 of the present embodiment, since the region 122 that is an inhibition portion is actively provided between the first electrode 114 and the second electrode 116, electromigration does not occur, and as a result, the magnetic sensor 100 It becomes possible to ensure high reliability. In addition, the organic protective layer 118 that has caused a decrease in reliability in the prior art is the same as that in the past on the magnetoresistive effect element 108 in order to improve the impact resistance of the magnetoresistive effect element 108 which is the main purpose. Is arranged. Therefore, the impact resistance of the magnetic sensor 100 is ensured as in the prior art. That is, according to the magnetic sensor 100 of the present embodiment, reliability is reduced due to electromigration between the first electrode 114 and the second electrode 116 while ensuring impact resistance to the magnetoresistive effect element 108. Does not occur.
磁気センサ１００の製造方法を説明する。図２〜図５は、磁気センサ１００の製造途中における平面および一部断面または一部平面図のみを工程順に示す。図２、３、５においては、図１と同様、（ａ）は平面を、（ｂ）は（ａ）におけるＡ−Ａ線一部断面を示す。（ａ）および（ｂ）において、図面を見やすくするため、一部の部材を省略して示している。 A method for manufacturing the magnetic sensor 100 will be described. 2 to 5 show only a plan and a partial cross-section or a partial plan view in the process of manufacturing the magnetic sensor 100 in the order of steps. 2, 3, and 5, as in FIG. 1, (a) shows a plane, and (b) shows a partial cross section along line AA in (a). In (a) and (b), in order to make the drawings easy to see, some members are omitted.
図２に示すように、基板１０２の表面に、たとえば、熱酸化法による酸化シリコン層を基板酸化層１０４として形成し、基板酸化層１０４上に、たとえばスパッタ法による酸化アルミニウム層を下地絶縁層１０６として形成する。さらに、下地絶縁層１０６上に磁気抵抗効果素子１０８を形成する。磁気抵抗効果素子１０８を構成する各層の成膜にはスパッタ法を用いることができ、成膜した各層のパターニングには、成膜後にレジストパターンを形成し、レジストパターンをマスクとして各層をエッチングする方法、または、マスクパターンを形成した後に各層の成膜を行い、その後マスクパターンを除去するとともにマスクパターン部分に成膜された各層を同時に除去するリフトオフ法を用いることができる。 As shown in FIG. 2, for example, a silicon oxide layer by a thermal oxidation method is formed as a substrate oxide layer 104 on the surface of the substrate 102, and an aluminum oxide layer by, for example, a sputtering method is formed on the substrate oxide layer 104. Form as. Further, the magnetoresistive effect element 108 is formed on the base insulating layer 106. A sputtering method can be used for film formation of each layer constituting the magnetoresistive effect element 108. For patterning each of the formed layers, a resist pattern is formed after film formation, and each layer is etched using the resist pattern as a mask. Alternatively, it is possible to use a lift-off method in which each layer is formed after the mask pattern is formed, and then the mask pattern is removed and each layer formed on the mask pattern portion is simultaneously removed.
次に、図３に示すように、配線層１１０を形成する。配線層１１０を構成するＣｒ等の導電層の成膜にはスパッタ法を用いることができ、導電層のパターニングには、磁気抵抗効果素子１０８の場合と同様、マスクを用いたエッチング法またはリフトオフ法を用いることができる。なお、磁気抵抗効果素子１０８または配線層１１０の形成と同時に、領域１１０ｂに、製造ロット番号等の情報を書き込んでもよい。 Next, as shown in FIG. 3, a wiring layer 110 is formed. A sputtering method can be used for forming a conductive layer such as Cr constituting the wiring layer 110, and the conductive layer is patterned by an etching method or a lift-off method using a mask, as in the case of the magnetoresistive element 108. Can be used. Note that information such as a manufacturing lot number may be written in the region 110b simultaneously with the formation of the magnetoresistive effect element 108 or the wiring layer 110.
次に、図４に示すように、無機保護層１１２を、たとえばスパッタ法により形成し、第１電極１１４および第２電極１１６の形成領域の無機保護層１１２を除去した後、図５に示すように、第１電極１１４および第２電極１１６をメッキ法により形成する。メッキ法を適用する際、無機保護層１１２はメッキ液から磁気抵抗効果素子１０８を保護する。なお、メッキ法には電解メッキまたは無電解メッキを採用できる。また、必要に応じてメッキシード膜を形成してもよい。 Next, as shown in FIG. 4, the inorganic protective layer 112 is formed by sputtering, for example, and after removing the inorganic protective layer 112 in the formation region of the first electrode 114 and the second electrode 116, as shown in FIG. In addition, the first electrode 114 and the second electrode 116 are formed by a plating method. When applying the plating method, the inorganic protective layer 112 protects the magnetoresistive effect element 108 from the plating solution. The plating method can be electrolytic plating or electroless plating. Further, a plating seed film may be formed as necessary.
さらに有機保護層１１８を形成し、必要な検査工程、ダイボンティング工程、ワイアボンディング工程を経た後、基板の全体をモールド樹脂１２０で囲み、図１に示す磁気センサ１００が製造できる。 Further, after forming the organic protective layer 118 and performing the necessary inspection process, die bonding process, and wire bonding process, the entire substrate is surrounded by the mold resin 120, and the magnetic sensor 100 shown in FIG. 1 can be manufactured.
（実施の形態２）
図６は、磁気センサ２００の平面および一部断面を示す。図１と同様、（ａ）は平面を、（ｂ）は（ａ）におけるＡ−Ａ線一部断面を示す。（ａ）および（ｂ）において、図面を見やすくするため、一部の部材を省略して示している。磁気センサ２００を構成する部材は、磁気センサ１００とほぼ同様であるため、同様の部材については説明を省略する。
(Embodiment 2)
FIG. 6 shows a plan view and a partial cross section of the magnetic sensor 200. As in FIG. 1, (a) shows a plane, and (b) shows a partial cross section along line AA in (a). In (a) and (b), in order to make the drawings easy to see, some members are omitted. Since the members constituting the magnetic sensor 200 are substantially the same as those of the magnetic sensor 100, the description of the same members is omitted.
磁気センサ２００においては、阻害部を構成するモールド樹脂１２０が、平面視した場合の第１電極１１４と第２電極１１６との間の一部において無機保護層１１２と接している。すなわち、図６において、第１電極１１４と第２電極１１６との間に有機保護層１１８の孔２０２を設け、当該孔２０２の底面において、モールド樹脂１２０と無機保護層１１２とが接する領域２０４を形成している。当該領域２０４は、磁気センサ１００における領域１２２と同様、阻害部として機能する。よって、磁気センサ２００は、実施の形態１と同様の効果を奏する。 In the magnetic sensor 200, the mold resin 120 constituting the inhibition portion is in contact with the inorganic protective layer 112 at a part between the first electrode 114 and the second electrode 116 when viewed in plan. That is, in FIG. 6, a hole 202 of the organic protective layer 118 is provided between the first electrode 114 and the second electrode 116, and a region 204 where the mold resin 120 and the inorganic protective layer 112 are in contact with each other on the bottom surface of the hole 202. Forming. Similar to the region 122 in the magnetic sensor 100, the region 204 functions as an obstruction. Therefore, the magnetic sensor 200 has the same effect as that of the first embodiment.
（実施の形態３）
図７は、磁気センサ３００の平面および一部断面を示す。図１と同様、（ａ）は平面を、（ｂ）は（ａ）におけるＡ−Ａ線一部断面を示す。（ａ）および（ｂ）において、図面を見やすくするため、一部の部材を省略して示している。磁気センサ３００を構成する部材は、磁気センサ１００とほぼ同様であるため、同様の部材については説明を省略する。
(Embodiment 3)
FIG. 7 shows a plan view and a partial cross section of the magnetic sensor 300. As in FIG. 1, (a) shows a plane, and (b) shows a partial cross section along line AA in (a). In (a) and (b), in order to make the drawings easy to see, some members are omitted. Since the members constituting the magnetic sensor 300 are substantially the same as those of the magnetic sensor 100, the description of the same members is omitted.
磁気センサ３００においては、阻害部を構成するモールド樹脂１２０が、第１電極１１４と無機保護層１１２との接触部または第２電極１１６と無機保護層１１２との接触部で無機保護層１１２と接している。すなわち、図７において、第１電極１１４と無機保護層１１２との接触部および第２電極１１６と無機保護層１１２との接触部に有機保護層１１８の孔３０２を設け、当該孔３０２の底面において、モールド樹脂１２０と無機保護層１１２とが接する領域３０４を形成している。当該領域３０４は、磁気センサ１００における領域１２２と同様、阻害部として機能する。よって、磁気センサ３００は、実施の形態１と同様の効果を奏する。 In the magnetic sensor 300, the mold resin 120 constituting the inhibition portion is in contact with the inorganic protective layer 112 at the contact portion between the first electrode 114 and the inorganic protective layer 112 or the contact portion between the second electrode 116 and the inorganic protective layer 112. ing. That is, in FIG. 7, the hole 302 of the organic protective layer 118 is provided in the contact portion between the first electrode 114 and the inorganic protective layer 112 and the contact portion between the second electrode 116 and the inorganic protective layer 112. A region 304 where the mold resin 120 and the inorganic protective layer 112 are in contact with each other is formed. Similar to the region 122 in the magnetic sensor 100, the region 304 functions as an obstruction. Therefore, the magnetic sensor 300 has the same effect as that of the first embodiment.
（実施の形態４）
図８は、磁気センサ４００の一部断面を示す。磁気センサ４００を構成する部材は、磁気センサ１００とほぼ同様であるため、同様の部材については説明を省略する。
(Embodiment 4)
FIG. 8 shows a partial cross section of the magnetic sensor 400. Since members constituting the magnetic sensor 400 are substantially the same as those of the magnetic sensor 100, the description of the same members is omitted.
磁気センサ４００においては、第１電極１１４または第２電極１１６と有機保護層１１８との接触を阻止する中間層４０２を有する。中間層４０２は、平面視した場合の第１電極１１４と第２電極１１６の間に位置する。中間層４０２は、第１電極１１４と第２電極１１６の間において第１電極１１４または第２電極１１６と有機保護層１１８との接触を阻止していることから、有機保護層１１８と無機保護層１１２との界面のリーク電流チャネルの形成を阻害し、阻害部として機能する。よって、磁気センサ４００は、実施の形態１〜３と同様の効果を奏する。中間層４０２として、酸化シリコン、窒化シリコン、酸窒化シリコン、酸化アルミニウム、窒化アルミニウム、酸窒化アルミニウム、酸化シリコンアルミニウム、窒化シリコンアルミニウムおよび酸窒化シリコンアルミニウムからなる群から選ばれる１種以上の物質を例示することができる。 The magnetic sensor 400 includes an intermediate layer 402 that prevents contact between the first electrode 114 or the second electrode 116 and the organic protective layer 118. The intermediate layer 402 is located between the first electrode 114 and the second electrode 116 when viewed in plan. Since the intermediate layer 402 prevents contact between the first electrode 114 or the second electrode 116 and the organic protective layer 118 between the first electrode 114 and the second electrode 116, the organic protective layer 118 and the inorganic protective layer 112 inhibits the formation of a leak current channel at the interface with 112 and functions as an inhibition part. Therefore, the magnetic sensor 400 has the same effect as the first to third embodiments. Examples of the intermediate layer 402 include one or more substances selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, silicon aluminum aluminum, silicon aluminum nitride, and silicon oxynitride can do.
以上、本発明を実施の形態を用いて説明したが、本発明の技術的範囲は上記実施の形態に記載の範囲には限定されない。上記実施の形態に、多様な変更または改良を加えることが可能であることが当業者に明らかである。その様な変更または改良を加えた形態も本発明の技術的範囲に含まれ得ることが、特許請求の範囲の記載から明らかである。 As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.
１００…磁気センサ、１０２…基板、１０４…基板酸化層、１０６…下地絶縁層、１０８…磁気抵抗効果素子、１１０…配線層、１１２…無機保護層、１１４…第１電極、１１６…第２電極、１１８…有機保護層、１２０…モールド樹脂、１２２…領域、２００…磁気センサ、２０２…孔、２０４…領域、３００…磁気センサ、３０２…孔、３０４…領域、４００…磁気センサ、４０２…中間層。 DESCRIPTION OF SYMBOLS 100 ... Magnetic sensor, 102 ... Substrate, 104 ... Substrate oxide layer, 106 ... Base insulating layer, 108 ... Magnetoresistive element, 110 ... Wiring layer, 112 ... Inorganic protective layer, 114 ... First electrode, 116 ... Second electrode 118 ... Organic protective layer, 120 ... Mold resin, 122 ... Region, 200 ... Magnetic sensor, 202 ... Hole, 204 ... Region, 300 ... Magnetic sensor, 302 ... Hole, 304 ... Region, 400 ... Magnetic sensor, 402 ... Middle layer.
Claims (10)
前記基板の複数の板面のうち少なくとも一つの板面に配置された磁気抵抗効果素子と、
前記磁気抵抗効果素子が配置された素子配置面に配置され、前記磁気抵抗効果素子に電気的に接続された第１電極および第２電極と、
前記基板の前記素子配置面の側に位置する有機保護層と、を有し、
前記素子配置面を平面視した場合の前記第１電極と前記第２電極との間に、前記第１電極または前記第２電極に含まれる材料のエレクトロマイグレーションを阻害する阻害部を有する
磁気センサ。 A substrate,
A magnetoresistive element disposed on at least one of the plurality of plate surfaces of the substrate;
A first electrode and a second electrode arranged on an element arrangement surface on which the magnetoresistive element is arranged, and electrically connected to the magnetoresistive element;
An organic protective layer located on the element arrangement surface side of the substrate,
The magnetic sensor which has the inhibition part which inhibits the electromigration of the material contained in the said 1st electrode or the said 2nd electrode between the said 1st electrode and the said 2nd electrode when planarly viewing the said element arrangement | positioning surface.
前記基板、前記磁気抵抗効果素子、前記無機保護層、前記第１電極、前記第２電極および前記有機保護層の全体を覆うモールド樹脂と、をさらに有し、
前記阻害部が、前記無機保護層と接する前記モールド樹脂の一部である
請求項１に記載の磁気センサ。 When the substrate, the magnetoresistive effect element, and the organic protective layer are located in a cross-sectional view of the plane, and the element arrangement surface is viewed in plan view An inorganic protective layer at least partially located between the first electrode and the second electrode;
The substrate, the magnetoresistive effect element, the inorganic protective layer, the first electrode, the second electrode, and a mold resin that covers the entire organic protective layer, and
The magnetic sensor according to claim 1, wherein the inhibition part is a part of the mold resin in contact with the inorganic protective layer.
請求項２に記載の磁気センサ。 3. The magnetic sensor according to claim 2, wherein the molding resin constituting the inhibition part is in contact with the inorganic protective layer in a whole region or a part between the first electrode and the second electrode when seen in a plan view. .
請求項２に記載の磁気センサ。 The mold resin constituting the inhibition part is in contact with the inorganic protective layer at a contact part between the first electrode and the inorganic protective layer or a contact part between the second electrode and the inorganic protective layer. The magnetic sensor described in 1.
前記モールド樹脂が、エポキシ樹脂からなる
請求項２から請求項４の何れか一項に記載の磁気センサ。 The contact portion of the inorganic protective layer with the mold resin is selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, silicon oxide aluminum, silicon aluminum nitride, and silicon oxynitride aluminum. Consists of one or more selected substances,
The magnetic sensor according to any one of claims 2 to 4, wherein the mold resin is made of an epoxy resin.
請求項２から請求項５の何れか一項に記載の磁気センサ。 The magnetic sensor according to any one of claims 2 to 5, wherein the organic protective layer and the inorganic protective layer have translucency.
前記阻害部が、平面視した場合の前記第１電極と前記第２電極の間に位置する前記中間層である
請求項１に記載の磁気センサ。 An intermediate layer for preventing contact between the first electrode or the second electrode and the organic protective layer;
The magnetic sensor according to claim 1, wherein the inhibition portion is the intermediate layer positioned between the first electrode and the second electrode when viewed in plan.
請求項７に記載の磁気センサ。 The intermediate layer is made of one or more substances selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, silicon aluminum oxide, silicon aluminum nitride, and silicon oxynitride. The magnetic sensor according to claim 7.
請求項１から請求項８の何れか一項に記載の磁気センサ。 The magnetic sensor according to any one of claims 1 to 8, wherein the first electrode or the second electrode includes one or more kinds of atoms selected from the group consisting of Au, Al, and Cu.
請求項１から請求項９の何れか一項に記載の磁気センサ。 The magnetic sensor according to any one of claims 1 to 9, wherein the organic protective layer includes one or more resins selected from the group consisting of a silicon resin and a polyimide resin.
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