JP2016138168A - Adhesive for semiconductor, method of manufacturing semiconductor device, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an adhesive for a semiconductor, which allows a semiconductor device excellent in reflow resistance to be manufactured.SOLUTION: The adhesive for a semiconductor contains an epoxy resin, a curing agent, and a compound represented by general formula (1). [In the general formula (1), Rrepresents a group represented by general formula (2); each Rindependently represents a 1-4C alkyl group; each Rindependently represents a hydroxyl group or a 1-4C alkyl group; a represents an integer of 0-3; and n represents an integer of 1-6.] [In the general formula (2), Rrepresents a hydrogen atom, a 1-10C alkyl group, an organic group derived from an aminoalkylsilane, or a heterocyclic group.]SELECTED DRAWING: None

Description

  The present invention relates to a semiconductor adhesive, a semiconductor device manufacturing method, and a semiconductor device.

  Conventionally, in order to connect a semiconductor chip and a substrate, a wire bonding method using a fine metal wire such as a gold wire has been widely applied. On the other hand, in order to meet the demands for higher functionality, higher integration, higher speed, etc., for semiconductor devices, flip chips that form conductive protrusions called bumps on a semiconductor chip or substrate and directly connect the semiconductor chip to the substrate Connection methods (FC connection methods) are becoming widespread.

  For example, for connection between a semiconductor chip and a substrate, a COB (Chip On Board) type connection method that is actively used in BGA (Ball Grid Array), CSP (Chip Size Package), and the like also corresponds to the FC connection method. The FC connection method is also widely used in a COC (Chip On Chip) type connection method in which connection portions (bumps and wirings) are formed on semiconductor chips to connect the semiconductor chips (for example, the following patents). Reference 1).

  For packages that are required to be further reduced in size, thickness, and functionality, a chip stack type package in which the above-described connection method is stacked and multi-staged, POP (Package On Package), TSV (Through-Silicon Via). Etc. are beginning to spread widely. Such stacking / multi-stage technology arranges semiconductor chips and the like three-dimensionally, so that the package can be made smaller than the two-dimensional arrangement technique. In addition, it is effective as a next-generation semiconductor wiring technology because it is effective for improving the performance of semiconductors, reducing noise, reducing the mounting area, and saving power.

Japanese Patent No. 5263050

  For semiconductor devices manufactured using semiconductor adhesives, excelling in heat resistance and moisture resistance allows sufficient peeling of semiconductor adhesives, poor connection at connection parts, etc. at a reflow temperature of around 260 ° C. It is required to have reflow resistance which is suppressed by the above.

  An object of this invention is to provide the adhesive agent for semiconductors which can produce the semiconductor device excellent in reflow resistance. Another object of the present invention is to provide a semiconductor device manufacturing method and a semiconductor device using such a semiconductor adhesive.

［式中、Ｒ^１１は、下記一般式（２）で表される基を示し、Ｒ^１２は、各々独立に炭素数１〜４のアルキル基を示し、Ｒ^１３は、各々独立に水酸基又は炭素数１〜４のアルキル基を示し、ａは、０〜３の整数を示し、ｎは、１〜６の整数を示す。］

［式中、Ｒ^２は、水素原子、炭素数１〜１０のアルキル基、アミノアルキルシラン由来の有機基、又は、複素環基を示す。］ This invention provides the adhesive agent for semiconductors containing an epoxy resin, a hardening | curing agent, and the compound represented by following General formula (1).

[Wherein R ¹¹ represents a group represented by the following general formula (2), R ¹² each independently represents an alkyl group having 1 to 4 carbon atoms, and R ¹³ each independently represents a hydroxyl group or carbon. The alkyl group of number 1-4 is shown, a shows the integer of 0-3, n shows the integer of 1-6. ]

[Wherein R ² represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an organic group derived from aminoalkylsilane, or a heterocyclic group. ]

  According to the semiconductor adhesive of the present invention, the semiconductor adhesive contains an epoxy resin and a curing agent, and further contains a compound represented by the formula (1), thereby being excellent in reflow resistance. Can be produced. According to the semiconductor adhesive of the present invention, a semiconductor device having excellent reflow resistance can be produced even when applied as a semiconductor adhesive in a flip-chip connection method in which metal bonding is performed. Moreover, according to such a semiconductor adhesive, a semiconductor device having excellent reflow resistance and connection reliability can be produced.

  In order to improve the reflow resistance, it is necessary to suppress a decrease in adhesive strength after moisture absorption at a high temperature. When the adhesion between the semiconductor chip and the substrate or between the two semiconductor chips is lowered, for example, there is a concern that the connectivity and insulation reliability are lowered, and the merit of adopting the flip chip connection method is impaired. Conventionally, the adhesion assistant has been used for the purpose of supplementing the adhesiveness, but the present inventors consider that the adhesion strength of the conventional adhesion assistant is reduced due to the following reasons.

  Usually, the adhesion assistant develops adhesion at the interface between the resin and the substrate, or the resin and the inorganic component contained in the resin, and increases the adhesion between the resin and the substrate or the bulk strength of the resin. , Improve the adhesion. However, when exposed to high temperature and high humidity conditions, the adhesion aid itself has low heat resistance and is decomposed, which is considered to be a cause of a decrease in adhesive strength after moisture absorption.

  On the other hand, the adhesive for semiconductors of the present invention increases the adhesion between the resin and the substrate or the bulk strength of the resin by containing the compound represented by the formula (1). The group represented by 2) is considered to have excellent adhesion even after being exposed to high-temperature and high-humidity conditions by having excellent heat resistance. For these reasons, according to the adhesive for semiconductors of the present invention, composition change due to moisture absorption or the like hardly occurs, and excellent adhesive force is maintained, so that reflow resistance can be improved.

The compound represented by the general formula (1) is a compound represented by the following general formula (3-a), a compound represented by the following general formula (3-b), or the following general formula (3-c). A compound represented by the following general formula (3-d), a compound represented by the following general formula (3-e), and a compound represented by the following general formula (3-f) It is preferable to include at least one selected from the group. By adopting such a configuration, by forming a stronger cross-linked structure, even more excellent adhesion is exhibited even after exposure to high temperature and high humidity conditions.

  The adhesive for semiconductors of this invention may further contain the component (however, except an epoxy resin) whose weight average molecular weight is 10,000 or more.

  The shape of the semiconductor adhesive of the present invention may be a film.

  The present invention also relates to a semiconductor device in which respective connection portions of a semiconductor chip and a printed circuit board are electrically connected to each other, or a semiconductor device in which respective connection portions of a plurality of semiconductor chips are electrically connected to each other. A method for manufacturing a semiconductor device, comprising: a step of sealing at least a part of the connecting portion using the semiconductor adhesive. According to the method for manufacturing a semiconductor device of the present invention, the reflow resistance and the connection reliability of the semiconductor device can be improved by using the semiconductor adhesive.

  Furthermore, this invention provides the semiconductor device obtained by the manufacturing method of the said semiconductor device. The semiconductor device of the present invention is excellent in reflow resistance and connection reliability.

  ADVANTAGE OF THE INVENTION According to this invention, the adhesive agent for semiconductors which can produce the semiconductor device excellent in reflow resistance and connection reliability can be provided. Moreover, according to this invention, the manufacturing method and semiconductor device of a semiconductor device using such an adhesive agent for semiconductors can be provided. Furthermore, according to the present invention, it is possible to provide an adhesion aid that makes it possible to realize the semiconductor adhesive.

It is a schematic cross section showing one embodiment of a semiconductor device of the present invention. It is a schematic cross section which shows other one Embodiment of the semiconductor device of this invention. It is a schematic cross section which shows other one Embodiment of the semiconductor device of this invention. It is process sectional drawing which shows typically one Embodiment of the manufacturing method of the semiconductor device of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings as the case may be. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

<Semiconductor adhesive>
The adhesive for semiconductors of this embodiment includes an epoxy resin (hereinafter sometimes referred to as “component (a)”), a curing agent (hereinafter sometimes referred to as “component (b)”), and a general formula described later. A compound represented by (1) (hereinafter sometimes referred to as “component (c)”).

  The adhesive for semiconductors of this embodiment is a component having a weight average molecular weight of 10,000 or more (excluding an epoxy resin, hereinafter referred to as “component (d)”), a filler (hereinafter referred to as “component”) as necessary. In some cases, it may be further referred to as “component (e)”) and at least one selected from the group consisting of a flux agent (hereinafter sometimes referred to as component (f)).

  Hereinafter, each component which comprises the adhesive agent for semiconductors of this embodiment is demonstrated.

(A) Component: Epoxy Resin As the (a) component, for example, an epoxy resin having two or more epoxy groups in the molecule can be used. As the component (a), for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type epoxy resin, tri Examples thereof include phenylmethane type epoxy resin, triphenolmethane type epoxy resin, dicyclopentadiene type epoxy resin, and various polyfunctional epoxy resins. (A) A component can be used individually by 1 type or in combination of 2 or more types.

  (A) As a component, from the viewpoint of suppressing decomposition at the time of connection at a high temperature and generating volatile components, when the temperature at the time of connection is 250 ° C., the thermal weight loss rate at 250 ° C. is 5% or less. It is preferable to use an epoxy resin, and when the temperature at the time of connection is 300 ° C., it is preferable to use an epoxy resin having a thermal weight loss rate of 5% or less at 300 ° C.

  The content of the component (a) is preferably 5 to 50% by mass, more preferably 10 to 45% by mass, and still more preferably 15 to 40% by mass, based on the total solid content of the semiconductor adhesive.

(B) Component: Curing Agent Examples of the (b) component include a phenol resin curing agent, an acid anhydride curing agent, an amine curing agent, an imidazole curing agent, and a phosphine curing agent. (B) When the component contains a phenolic hydroxyl group, an acid anhydride, an amine or an imidazole, it exhibits a flux activity that suppresses the formation of an oxide film at the connection part, and further improves connection reliability and insulation reliability. Can do. Hereinafter, each curing agent will be described.

(I) Phenolic resin-based curing agent The phenolic resin-based curing agent is not particularly limited as long as it has two or more phenolic hydroxyl groups in the molecule. For example, phenol novolak resin, cresol novolac resin, phenol aralkyl resin Cresol naphthol formaldehyde polycondensate, triphenylmethane type polyfunctional phenol resin and various polyfunctional phenol resins can be used. A phenol resin hardening | curing agent can be used individually by 1 type or in combination of 2 or more types.

  The equivalent ratio of the phenol resin curing agent to the component (a) (phenolic hydroxyl group / epoxy group, molar ratio) is 0.3 to 1. from the viewpoint of obtaining better curability, adhesiveness, and storage stability. 5 is preferable, 0.4 to 1.0 is more preferable, and 0.5 to 1.0 is still more preferable. If the equivalent ratio is 0.3 or more, the curability tends to be improved and the adhesive force tends to be further improved. If the equivalent ratio is 1.5 or less, the unreacted phenolic hydroxyl group does not remain excessively, and the water absorption The rate tends to be kept low, and the insulation reliability tends to further improve.

(Ii) Acid anhydride curing agent Examples of the acid anhydride curing agent include methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic dianhydride, and ethylene glycol bis. Anhydro trimellitate can be used. An acid anhydride type hardening | curing agent can be used individually by 1 type or in combination of 2 or more types.

  The equivalent ratio of the acid anhydride curing agent to the component (a) (acid anhydride group / epoxy group, molar ratio) is 0.3 to 0.3 from the viewpoint of obtaining better curability, adhesion and storage stability. 1.5 is preferable, 0.4 to 1.0 is more preferable, and 0.5 to 1.0 is still more preferable. If the equivalent ratio is 0.3 or more, the curability tends to be improved and the adhesive strength tends to be further improved. If the equivalent ratio is 1.5 or less, the unreacted acid anhydride does not remain excessively, and the water absorption The rate tends to be kept low, and the insulation reliability tends to further improve.

(Iii) Amine-based curing agent As the amine-based curing agent, for example, dicyandiamide can be used.

  The equivalent ratio of the amine curing agent to the component (a) (amine / epoxy group, molar ratio) is preferably 0.3 to 1.5 from the viewpoint of obtaining better curability, adhesiveness and storage stability. 0.4-1.0 is more preferable and 0.5-1.0 is still more preferable. When the equivalence ratio is 0.3 or more, the curability is improved and the adhesive force tends to be further improved. When the equivalent ratio is 1.5 or less, the unreacted amine does not remain excessively, and the insulation reliability There is a tendency to further improve.

(Iv) Imidazole-based curing agent Examples of the imidazole-based curing agent include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1- Cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6 -[2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1')]-ethyl-s-triazine, 2, 4-Diamino-6- [2'-ethyl-4'-methylimidazolyl- (1 ')]-ethyl-s Triazine, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5- Examples include dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and adducts of epoxy resins and imidazoles. Among these, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole from the viewpoint of obtaining further excellent curability, storage stability and connection reliability. Trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine, 2,4-diamino- 6- [2′-Ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s -Triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole and 2- Phenyl-4-methyl-5-hydroxymethylimidazole is preferred. One imidazole curing agent can be used alone, or two or more imidazole curing agents can be used in combination. Moreover, it is good also as a latent hardening | curing agent which encapsulated these.

  0.1-30 mass parts is preferable with respect to 100 mass parts of (a) component, and, as for content of an imidazole type hardening | curing agent, 1-25 mass parts is more preferable. If the content of the imidazole-based curing agent is 0.1 parts by mass or more, the curability tends to be improved, and if it is 30 parts by mass or less, the adhesive for semiconductor is cured before the metal bond is formed. There is a tendency that poor connection is unlikely to occur.

(V) Phosphine-based curing agent Examples of the phosphine-based curing agent include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra (4-methylphenyl) borate and tetraphenylphosphonium (4-fluorophenyl) borate. Can be mentioned. A phosphine type hardening | curing agent can be used individually by 1 type or in combination of 2 or more types.

  0.1-30 mass parts is preferable with respect to 100 mass parts of (a) component, and, as for content of a phosphine type hardening | curing agent, 0.1-25 mass parts is more preferable. When the content of the phosphine-based curing agent is 0.1 parts by mass or more, the curability tends to be improved, and when the content is 30 parts by mass or less, the adhesive for a semiconductor is cured before a metal bond is formed. There is a tendency that poor connection is unlikely to occur.

  A phenol resin hardening | curing agent, an acid anhydride type hardening | curing agent, and an amine hardening | curing agent can each be used individually by 1 type or in combination of 2 or more types. When the adhesive for semiconductor contains a phenol resin curing agent, an acid anhydride curing agent or an amine curing agent as component (b), it exhibits a flux activity to remove the oxide film and further improve the connection reliability. Can do. The imidazole-based curing agent and the phosphine-based curing agent may each be used alone, but may be used together with a phenol resin-based curing agent, an acid anhydride-based curing agent, or an amine-based curing agent.

［式中、Ｒ^１１は、下記一般式（２）で表される基を示し、Ｒ^１２は、各々独立に炭素数１〜４のアルキル基を示し、Ｒ^１３は、各々独立に水酸基又は炭素数１〜４のアルキル基を示し、ａは、０〜３の整数を示し、ｎは、１〜６の整数を示す。］ (C) Component: Compound represented by general formula (1) (adhesion aid)
When the adhesive for semiconductor contains a compound represented by the following general formula (1), the adhesion is improved and the connection reliability can be improved.

[Wherein R ¹¹ represents a group represented by the following general formula (2), R ¹² each independently represents an alkyl group having 1 to 4 carbon atoms, and R ¹³ each independently represents a hydroxyl group or carbon. The alkyl group of number 1-4 is shown, a shows the integer of 0-3, n shows the integer of 1-6. ]

［式中、Ｒ^２は、水素原子、炭素数１〜１０のアルキル基、アミノアルキルシラン由来の有機基（１価の有機基）、又は、複素環基を示す。Ｒ^２は各々置換基を有していてもよい。］

[Wherein, R ² represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an organic group derived from aminoalkylsilane (monovalent organic group), or a heterocyclic group. Each R ² may have a substituent. ]

  By including the group represented by the formula (2), the compound represented by the formula (1) can exhibit good adhesion to a substrate even after being exposed to high temperature and high humidity conditions. This is considered because the group represented by the formula (2) is excellent in heat resistance.

  The compound represented by the formula (1) is a compound represented by the following general formula (3-a), the following general formula (3-b), from the viewpoint of obtaining better adhesiveness and better storage stability. A compound represented by the following general formula (3-c), a compound represented by the following general formula (3-d), a compound represented by the following general formula (3-e), and It is preferable to include at least one selected from the group consisting of compounds represented by the following general formula (3-f). By adopting such a configuration, it is considered that by forming a stronger network, even more excellent adhesion is exhibited even after exposure to high temperature and high humidity conditions.

  In the compound represented by the formula (1), the amide bond is blocked with an amino group, and it is considered that the compound is deblocked during curing to generate a highly reactive isocyanate group. The terminal isocyanate group reacts with an epoxy resin or the like to form a stronger cross-linked structure, and thus it is considered that further excellent adhesion can be maintained even after exposure to high temperature and high humidity conditions. From that viewpoint, the compound represented by the formula (1) is selected from the group consisting of a compound represented by the following general formula (3-a) and a compound represented by the following general formula (3-b). More preferably, at least one kind is included.

  The compound represented by the formula (1) includes a compound represented by the following general formula (4), ammonia, a compound having 1 to 10 carbon atoms having an amino group, an aminoalkylsilane compound, or a complex having an amino group. It can be obtained by mixing with a ring compound and carrying out an addition reaction.

［式中、Ｒ^４１は、炭素数１〜６のアルキレン基を示し、Ｒ^４２は、各々独立に炭素数１〜４のアルキル基を示し、Ｒ^４３は、各々独立に水酸基又は炭素数１〜４のアルキル基を示し、ｂは、０〜３の整数を示す。］

[Wherein, R ⁴¹ represents an alkylene group having 1 to 6 carbon atoms, R ⁴² independently represents an alkyl group having 1 to 4 carbon atoms, and R ⁴³ each independently represents a hydroxyl group or 1 to 6 carbon atoms. 4 represents an alkyl group, and b represents an integer of 0 to 3. ]

  Examples of the compound represented by the formula (4) include 1-isocyanatomethyltrimethylsilane, 1-isocyanatomethyltriethylsilane, 1-isocyanatemethyltripropylsilane, 1-isocyanatemethyltributylsilane, and 1-isocyanatomethyl. Trimethoxysilane, 1-isocyanatomethyldimethoxymethylsilane, 1-isocyanatomethylmethoxydimethylsilane, 1-isocyanatomethyltriethoxysilane, 1-isocyanatomethyltripropoxysilane, 1-isocyanatomethyltributoxysilane, 1 -Isocyanatomethyldiethoxyethylsilane, 3-isocyanatopropyltrimethylsilane, 3-isocyanatopropyltriethylsilane, 3-isocyanatopropyltrimethoxysilane, 3-i Cyanatepropyldimethoxymethylsilane, 3-isocyanatopropylmethoxydimethylsilane, 3-isocyanatopropyltriethoxysilane, 3-isocyanatopropyldiethoxyethylsilane, 3-isocyanatopropylethoxydiethylsilane, 6-isocyanatohexyltri Methoxysilane, 6-isocyanatohexyldimethoxymethylsilane, 6-isocyanatohexylmethoxydimethylsilane, 6-isocyanatohexyltriethoxysilane, 6-isocyanatohexyldiethoxyethylsilane, 6-isocyanatohexylethoxydiethylsilane, etc. From the viewpoint of availability, 3-isocyanatopropyltrimethoxysilane and 3-isocyanatopropyltriethoxysilane are preferable.

  The compound of the formula (1) including the group represented by the formula (2) includes, for example, a compound represented by the formula (4), ammonia, a compound having 1 to 10 carbon atoms having an amino group, and an aminoalkylsilane compound. Or it is a compound obtained by making it react with the heterocyclic compound which has an amino group. This reaction formula is shown as the following formula (5).

When ammonia and a compound represented by formula (4) are reacted, a compound in which R ^{2 of the} group represented by formula (2) is a hydrogen atom (for example, represented by formula (3-a) Compound and a compound represented by formula (3-b)).

When a compound having 1 to 10 carbon atoms having an amino group and a compound represented by formula (4) are reacted, R ^{2 of the} group represented by formula (2) is an alkyl group having 1 to 10 carbon atoms. Is obtained. Examples of the compound having 1 to 10 carbon atoms having an amino group include aminomethane, aminoethane, aminopropane, aminobutane, aminopentane, aminohexane, aminoheptane, aminooctane, aminononane, aminodecane, 2-ethylhexylamine and the like.

When the aminoalkylsilane compound is reacted with the compound represented by the formula (4), a compound in which R ^{2 of the} group represented by the formula (2) is an organic group derived from the aminoalkylsilane compound is obtained. Examples of aminoalkylsilane compounds include 4-aminobutyltriethoxysilane, 4-amino-3,3-dimethylbutyltrimethoxysiloxane, N- (2-aminoethyl) -3-aminopropylmethyl-dimethoxysilane, N- ( 2-aminoethyl) -4-aminopropylmethyl-triethoxysilane and the like.

When a heterocyclic compound having an amino group is reacted with a compound represented by formula (4), a compound in which R ^{2 of the} group represented by formula (2) is a heterocyclic group is obtained. Examples of the heterocyclic compound having an amino group include 5-aminotetrazole, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, 4-aminopyridine, 2-aminopyridine, 3 -Aminopyridine, 2,6-diaminopyridine, 3,4-diaminopyridine, 2-aminothiazole, 2-aminobenzothiazole and the like.

  Reaction of Formula (5) may be made to react at room temperature (25 degreeC. The following is same), and may be made to react in the temperature range between 50-100 degreeC. Further, the raw materials may be directly mixed, or may be used by dissolving in a solvent such as dimethylformamide, 1,2-diethoxyethane, N-methylpyrrolidone.

  In this way, by blocking isocyanate groups with high reaction activity, it is possible to obtain an adhesion assistant with excellent storage stability. Furthermore, by blocking with amine compounds, thermally stable urea bonds can be obtained. It is possible to obtain an adhesion aid having the same. Thereby, the adhesion assistant which shows favorable adhesiveness after a high temperature, high humidity test can be obtained.

  (C) 0.1-20 mass parts is preferable with respect to 100 mass parts of (a) component, as for content of a component, 1-15 mass parts is more preferable, and 1-10 mass parts is still more preferable. When the content is 0.1 parts by mass or more, sufficient adhesion (for example, adhesion to the substrate) can be imparted, and when the content is 20 parts by mass or less, degassing in the heating process at the time of mounting. Foaming can be suppressed.

(D) Component: a component having a weight average molecular weight of 10,000 or more (polymer component)
The adhesive for semiconductors of this embodiment may contain the component ((d) component) whose weight average molecular weight is 10,000 or more as needed. (D) The adhesive for semiconductors containing a component is further excellent in heat resistance and film formation.

  Examples of the component (d) include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, methacrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, polyetherimide resin, and polyvinyl acetal. Resin, urethane resin, and acrylic rubber are mentioned. Among these, from the viewpoint of excellent heat resistance and film formability, phenoxy resin, polyimide resin, acrylic rubber, cyanate ester resin, and polycarbodiimide resin are preferable, and phenoxy resin, polyimide resin, and acrylic rubber are more preferable. The component (d) can be used alone or as a mixture or copolymer of two or more. However, the (d) component does not include the epoxy resin as the (a) component.

  (D) The weight average molecular weight of a component is 10,000 or more, 20000 or more are preferable and 30000 or more are more preferable. According to such component (d), the heat resistance and film formability of the semiconductor adhesive can be further improved.

  The weight average molecular weight of the component (d) is preferably 1,000,000 or less, more preferably 500,000 or less. According to such a component (d), high heat resistance is obtained.

  In addition, the said weight average molecular weight shows the weight average molecular weight of polystyrene conversion measured using GPC (gel permeation chromatography, Gel Permeation Chromatography).

When the semiconductor adhesive contains the component (d), the ratio C _a / C _d (mass ratio) of the content C _a of the component (a) to the content C _d of the component (d) is 0.01 to 5 is preferable, 0.05 to 4 is more preferable, and 0.1 to 3 is still more preferable. Better curability and adhesive strength can be obtained when the ratio C _a / C _d is 0.01 or more. When the ratio C _a / C _d is 5 or less, better film formability can be obtained.

(E) Component: Filler The semiconductor adhesive of the present embodiment may contain a filler ((e) component) as necessary. The viscosity of the semiconductor adhesive, the physical properties of the cured product of the semiconductor adhesive, and the like can be controlled by the component (e). Specifically, according to the component (e), for example, it is possible to suppress the generation of voids at the time of connection and to reduce the moisture absorption rate of the cured product of the adhesive for semiconductor.

  As the component (e), inorganic fillers (for example, insulating inorganic fillers), whiskers, resin fillers, and the like can be used. (E) A component can be used individually by 1 type or in combination of 2 or more types.

  Examples of the material for the inorganic filler include glass, silica, alumina, titanium oxide, carbon black, mica, and boron nitride. Among these, silica, alumina, titanium oxide, and boron nitride are preferable, and silica, alumina, and boron nitride are more preferable.

  Examples of whisker materials include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, magnesium sulfate, and boron nitride.

  As a resin filler, the filler which consists of resin, such as a polyurethane and a polyimide, is mentioned, for example.

  The shape, particle size and content of the component (e) are not particularly limited. Further, the component (e) may have its physical properties appropriately adjusted by surface treatment.

  As for content of (e) component, 50-300 mass parts is preferable with respect to 100 mass parts of (a) component, and 70-200 mass parts is more preferable.

(F) Component: Flux Agent The (f) component is a compound having flux activity (excluding the (b) component), and functions as a flux agent in the adhesive for semiconductors of this embodiment. (F) A component can be used individually by 1 type or in combination of 2 or more types.

  Examples of the fluxing agent include an electron donating group at the 2-position of a dicarboxylic acid selected from succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid and dodecanedioic acid ( For example, a compound substituted with an alkyl group such as a methyl group can be used.

  The melting point of the fluxing agent is preferably 150 ° C. or lower, more preferably 140 ° C. or lower, and further preferably 130 ° C. or lower. Such a fluxing agent is likely to exhibit sufficient flux activity before the curing reaction between the epoxy resin and the curing agent occurs. Therefore, according to the semiconductor adhesive containing such a fluxing agent, it is possible to realize a semiconductor device that is further excellent in connection reliability. Further, the melting point of the flux agent is preferably 25 ° C. or higher, and more preferably 50 ° C. or higher. The fluxing agent is preferably solid at room temperature.

  (F) As for content of a component, 0.5-20 mass parts is preferable with respect to 100 mass parts of (a) component, and 1-10 mass parts is more preferable.

(Other ingredients)
The adhesive for semiconductors of this embodiment may contain an organosilane compound other than the component (c) in order to further improve the adhesion (for example, adhesion to a cured silicon substrate or the like). Organic silane compounds include γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, vinyltriethoxysilane, vinyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, and γ-glycidoxypropyltrimethoxy. Silane, γ-methacryloxypropyltrimethoxysilane, γ-acryloxypropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, triethoxysilylpropylethylcarbamate, 3- (triethoxysilyl) Propyl succinic anhydride, phenyltriethoxysilane, phenyltrimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-triethoxysilyl-N- (1,3-dimethylbutyryl Emissions) propylamine, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and the like. (C) Content of organosilane compounds other than a component is suitably adjusted so that a desired effect may be acquired.

  The semiconductor adhesive of this embodiment may contain additives such as an antioxidant, a silane coupling agent, a titanium coupling agent, a leveling agent, and an ion trap agent. These additives can be used alone or in combination of two or more. What is necessary is just to adjust suitably about content of these additives so that the effect of each additive may express.

  The shape of the semiconductor adhesive of the present embodiment may be a film or a paste. An example of a method for producing a film adhesive using the semiconductor adhesive of this embodiment is shown below.

  First, component (a), component (b) and component (c), and component (d), component (e) and component (f), which are added as necessary, are added to an organic solvent and stirred and mixed. The resin varnish is prepared by dissolving or dispersing by kneading or the like. Then, after applying the resin varnish using a knife coater, roll coater, applicator, etc. on the base film subjected to the mold release treatment, the film-like adhesive is applied on the base film by removing the organic solvent by heating. Can be formed.

  As the organic solvent used for preparing the resin varnish, those having properties capable of uniformly dissolving or dispersing each component are preferable. For example, dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether, Examples include toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, and ethyl acetate. An organic solvent can be used individually by 1 type or in combination of 2 or more types. Stir mixing and kneading at the time of preparing the resin varnish can be performed using, for example, a stirrer, a raking machine, a three roll, a ball mill, a bead mill, or a homodisper.

  The base film is not particularly limited as long as it has heat resistance capable of withstanding the heating conditions when the organic solvent is volatilized. Polyolefin film such as polypropylene film and polymethylpentene film; polyethylene terephthalate film, polyethylene naphthalate Examples thereof include polyester films such as films; polyimide films; polyetherimide films. The base film is not limited to a single layer made of these films, and may be a multilayer film made of two or more materials.

  The drying conditions for volatilizing the organic solvent from the resin varnish applied to the base film are preferably those for sufficiently volatilizing the organic solvent. Specifically, heating is performed at 50 to 200 ° C. for 0.1 to 90 minutes. Is preferred. The organic solvent is preferably removed to 1.5% by mass or less based on the total amount of the film adhesive.

  The semiconductor adhesive of this embodiment may be directly formed on a substrate (wafer). Specifically, for example, the resin varnish may be directly spin coated on the substrate to form a film, and then the organic solvent may be removed to form the semiconductor adhesive directly on the substrate.

<Semiconductor device>
The semiconductor device of this embodiment will be described below with reference to FIGS. FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device. As shown in FIG. 1A, a semiconductor device 100 includes a semiconductor chip 10 and a substrate (circuit wiring board) 20 that face each other, and wirings 15 that are respectively disposed on mutually facing surfaces of the semiconductor chip 10 and the substrate 20. The connection bump 30 connects the semiconductor chip 10 and the wiring 15 of the substrate 20 to each other, and the adhesive material 40 is filled in the gap between the semiconductor chip 10 and the substrate 20 without any gap. The semiconductor chip 10 and the substrate 20 are flip-chip connected by wiring 15 and connection bumps 30. The wiring 15 and the connection bump 30 are sealed with an adhesive material 40 and are shielded from the external environment.

  As shown in FIG. 1B, the semiconductor device 200 includes a semiconductor chip 10 and a substrate 20 that face each other, a bump 32 that is disposed on a surface that faces the semiconductor chip 10 and the substrate 20, respectively, It has the adhesive material 40 with which the space | gap between the board | substrates 20 was filled without the clearance gap. The semiconductor chip 10 and the substrate 20 are flip-chip connected by connecting opposing bumps 32 to each other. The bumps 32 are sealed with an adhesive material 40 and are shielded from the external environment. In the semiconductor devices 100 and 200, the adhesive material 40 is a cured product of the semiconductor adhesive of the present embodiment.

  FIG. 2 is a schematic cross-sectional view showing another embodiment of the semiconductor device. As shown in FIG. 2A, the semiconductor device 300 is the same as the semiconductor device 100 except that two semiconductor chips 10 are flip-chip connected by wirings 15 and connection bumps 30. As shown in FIG. 2B, the semiconductor device 400 is the same as the semiconductor device 200 except that the two semiconductor chips 10 are flip-chip connected by the bumps 32.

  The semiconductor chip 10 is not particularly limited, and an elemental semiconductor composed of the same kind of element such as silicon or germanium, a compound semiconductor such as gallium arsenide, or indium phosphide can be used.

  The substrate 20 is not particularly limited as long as it is a circuit substrate, and an unnecessary portion of a metal film is formed on the surface of an insulating substrate mainly composed of glass epoxy resin, polyimide, polyester, ceramic, epoxy resin, bismaleimide triazine, or the like. A circuit board having wiring (wiring pattern) 15 formed by etching away, a circuit board having wiring 15 formed on the surface of the insulating substrate by metal plating or the like, and a conductive material printed on the surface of the insulating substrate A circuit board on which the wiring 15 is formed can be used.

  The connection parts such as the wiring 15 and the bumps 32 are gold, silver, copper, and solder as main components (the main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper). Nickel, tin, lead, etc., and may contain a plurality of metals.

  Among the above metals, gold, silver and copper are preferable, and silver and copper are more preferable from the viewpoint of providing a package with excellent electrical conductivity and thermal conductivity of the connection portion. Silver, copper, and solder are preferable, copper and solder are more preferable, and solder is still more preferable from the viewpoint of providing a package with reduced cost due to being inexpensive. When an oxide film is formed on the surface of the metal at room temperature, productivity may decrease or the cost may increase. From the viewpoint of suppressing the formation of the oxide film, gold, silver, copper and solder are preferable, Gold, silver and solder are more preferable, and gold and silver are still more preferable.

  Gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), tin, nickel, etc. are the main components on the surface of the wiring 15 and the bump 32. For example, the metal layer may be formed by plating. This metal layer may be composed of only a single component, or may be composed of a plurality of components. The metal layer may have a structure in which a single layer or a plurality of metal layers are stacked.

  Further, in the semiconductor device of this embodiment, a plurality of structures (packages) as shown in the semiconductor devices 100 to 400 may be stacked. In this case, the semiconductor devices 100 to 400 include gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper), tin, nickel, and the like. May be electrically connected to each other by a bump or wiring including

  As a method of stacking a plurality of semiconductor devices, as shown in FIG. 3, for example, a TSV (Through-Silicon Via) technique is cited. FIG. 3 is a schematic cross-sectional view showing another embodiment of the semiconductor device, which is a semiconductor device using TSV technology. In the semiconductor device 500 shown in FIG. 3, the wiring 15 formed on the interposer 50 is connected to the wiring 15 of the semiconductor chip 10 via the connection bumps 30, so that the semiconductor chip 10 and the interposer 50 are flip-chip connected. ing. The gap between the semiconductor chip 10 and the interposer 50 is filled with the adhesive material 40 without a gap. On the surface of the semiconductor chip 10 opposite to the interposer 50, the semiconductor chip 10 is repeatedly stacked via the wiring 15, the connection bumps 30, and the adhesive material 40. The wirings 15 on the pattern surface on the front and back sides of the semiconductor chip 10 are connected to each other by through electrodes 34 filled in holes that penetrate the inside of the semiconductor chip 10. In addition, as a material of the penetration electrode 34, copper, aluminum, etc. can be used.

  Such a TSV technique makes it possible to acquire signals from the back surface of a semiconductor chip that is not normally used. Furthermore, since the through electrode 34 passes vertically through the semiconductor chip 10, the distance between the semiconductor chips 10 facing each other and between the semiconductor chip 10 and the interposer 50 can be shortened, and flexible connection is possible. The semiconductor adhesive of the present embodiment can be applied as a semiconductor adhesive between the semiconductor chips 10 facing each other, or between the semiconductor chip 10 and the interposer 50 in such a TSV technology.

  In addition, in a bump forming method with a high degree of freedom such as an area bump chip technology, a semiconductor chip can be directly mounted on a mother board without using an interposer. The semiconductor adhesive of this embodiment can also be applied when such a semiconductor chip is directly mounted on a mother board. In addition, the adhesive for semiconductors of this embodiment can be applied also when sealing the space | gap between board | substrates, when laminating | stacking two wiring circuit boards.

<Method for Manufacturing Semiconductor Device>
In the method for manufacturing a semiconductor device according to the present embodiment, for example, a semiconductor device in which connection portions of a semiconductor chip and a printed circuit board are electrically connected to each other, or connection portions of a plurality of semiconductor chips are electrically connected to each other. A method of manufacturing a semiconductor device connected to a semiconductor device, comprising the step of sealing at least a part of the connection portion using the semiconductor adhesive. A method for manufacturing the semiconductor device of this embodiment will be described below with reference to FIGS. FIG. 4 is a process cross-sectional view schematically showing one embodiment of a method for manufacturing a semiconductor device.

  First, as shown in FIG. 4A, a solder resist 60 having openings at positions where connection bumps 30 are formed is formed on a substrate 20 having wirings 15. The solder resist 60 is not necessarily provided. However, by providing the solder resist 60 on the substrate 20, it is possible to suppress the occurrence of a bridge between the wirings 15 and further improve the connection reliability and the insulation reliability. The solder resist 60 can be formed using, for example, a commercially available solder resist ink for packaging. Specific examples of commercially available solder resist inks for packages include SR series (trade name, manufactured by Hitachi Chemical Co., Ltd.) and PSR4000-AUS series (trade name, manufactured by Taiyo Ink Manufacturing Co., Ltd.).

  Next, as shown in FIG. 4A, connection bumps 30 are formed in the openings of the solder resist 60. Then, as shown in FIG. 4B, a film-like adhesive for semiconductor (hereinafter referred to as “film-like adhesive” in some cases) 41 is formed on the substrate 20 on which the connection bumps 30 and the solder resist 60 are formed. Affix. The film adhesive 41 can be attached by a hot press, roll lamination, vacuum lamination, or the like. The supply area and thickness of the film adhesive 41 are appropriately set according to the size of the semiconductor chip 10 and the substrate 20 and the height of the connection bump 30.

  After the film-like adhesive 41 is attached to the substrate 20 as described above, the wiring 15 of the semiconductor chip 10 and the connection bumps 30 are aligned using a connection device such as a flip chip bonder. Subsequently, the semiconductor chip 10 and the substrate 20 are pressure-bonded while being heated at a temperature equal to or higher than the melting point of the connection bump 30 to connect the semiconductor chip 10 and the substrate 20 as shown in FIG. A gap between the semiconductor chip 10 and the substrate 20 is sealed and filled with an adhesive material 40 that is a cured product of the adhesive 41. Thus, the semiconductor device 600 is obtained.

  In the manufacturing method of the semiconductor device according to the present embodiment, after the alignment, the semiconductor chip 10 is temporarily fixed (in a state where the adhesive for semiconductor is interposed) and heated in a reflow furnace to melt the connection bumps 30. And the substrate 20 may be connected. Since it is not always necessary to form a metal joint at the temporary fixing stage, it can be crimped with a low load, in a short time, and at a low temperature as compared with the above-mentioned method of crimping while heating. Deterioration of the part can be suppressed.

  Further, after the semiconductor chip 10 and the substrate 20 are connected, heat treatment may be performed in an oven or the like to further improve connection reliability and insulation reliability. As the heating temperature, a temperature at which the curing of the film adhesive proceeds is preferable, and a temperature at which it is completely cured is more preferable. The heating temperature and the heating time are appropriately set.

  In the method for manufacturing a semiconductor device according to the present embodiment, the substrate 20 may be connected after the film adhesive 41 is attached to the semiconductor chip 10. Alternatively, after the semiconductor chip 10 and the substrate 20 are connected by the wiring 15 and the connection bumps 30, the gap between the semiconductor chip 10 and the substrate 20 may be filled with a paste-like semiconductor adhesive and cured.

  From the viewpoint of improving productivity, the semiconductor adhesive is supplied onto the semiconductor chip 10 by supplying the semiconductor adhesive to the semiconductor wafer to which the plurality of semiconductor chips 10 are connected, and then dicing into pieces. The obtained structure may be obtained. Further, when the adhesive for semiconductor is in a paste form, it is not particularly limited, but it is sufficient to embed wirings and bumps on the semiconductor chip 10 and make the thickness uniform by a coating method such as spin coating. In this case, since the supply amount of the resin becomes constant, productivity is improved and generation of voids due to insufficient embedding and a decrease in dicing property can be suppressed. On the other hand, when the adhesive for semiconductor is in the form of a film, it is not particularly limited, but the film-like so as to embed wiring and bumps on the semiconductor chip 10 by a sticking method such as heating press, roll lamination, and vacuum lamination. A semiconductor adhesive may be supplied. In this case, since the supply amount of the resin is constant, productivity is improved, and generation of voids due to insufficient embedding and a decrease in dicing property can be suppressed.

  The connection load is set in consideration of variations in the number and height of the connection bumps 30, the amount of deformation due to pressurization of the connection bumps 30 or the wiring that receives the bumps of the connection portions. The connection temperature is preferably such that the temperature of the connection portion is equal to or higher than the melting point of the connection bump 30, but may be any temperature at which metal connection of each connection portion (bump or wiring) is formed. When the connection bump 30 is a solder bump, about 240 ° C. or higher is preferable.

  The connection time at the time of connection varies depending on the constituent metal of the connection part, but a shorter time is preferable from the viewpoint of improving productivity. When the connection bump 30 is a solder bump, the connection time is preferably 20 seconds or less, more preferably 10 seconds or less, and even more preferably 5 seconds or less. In the case of copper-copper or copper-gold metal connection, the connection time is preferably 60 seconds or less.

  Even in the above-described flip-chip connection portions having various package structures, the semiconductor adhesive of the present embodiment exhibits excellent reflow resistance and connection reliability.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment.

  For example, one aspect of the present invention relates to the use of a compound represented by the formula (1) as an adhesion aid blended in a semiconductor adhesive. Another aspect of the present invention relates to the use of the compound represented by formula (1) for the production of a semiconductor adhesive.

  The other side surface of this invention is related with the contact | adherence adjuvant containing the compound represented by Formula (1). Another aspect of the present invention can be said to be the use of an adhesion assistant containing a compound represented by formula (1) for the production of a semiconductor adhesive.

  Another aspect of the present invention can be said to be the use of a composition containing an epoxy resin, a curing agent, and a compound represented by formula (1) as an adhesive for semiconductors. Another aspect of the present invention can also be said to be the use of a composition containing an epoxy resin, a curing agent, and a compound represented by formula (1) for the production of a semiconductor adhesive. .

  EXAMPLES Hereinafter, although an Example demonstrates this invention more concretely, this invention is not limited to an Example.

  The compounds used in each example and comparative example are as follows.

(A) Epoxy resin ・ Trifunctional methane skeleton-containing polyfunctional solid epoxy (manufactured by Japan Epoxy Resin Co., Ltd., trade name “EP1032H60”, hereinafter referred to as “EP1032”)
-Bisphenol F type liquid epoxy (manufactured by Japan Epoxy Resin Co., Ltd., trade name “YL983U”, hereinafter referred to as “YL983”)
Flexible epoxy (made by Japan Epoxy Resin Co., Ltd., trade name “YL7175”, hereinafter referred to as “YL7175”)

(B) Curing agent 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid adduct (manufactured by Shikoku Kasei Co., Ltd., trade name “2MAOK-PW”, Hereinafter referred to as “2MAOK”.)

(C) Compound represented by formula (1) (adhesion aid)
3-ureidopropyltrimethoxysilane (manufactured by Shin-Etsu Silicone, KBM-585, hereinafter referred to as “KBM-585”), a compound represented by the formula (3-b) 3-ureidopropyltriethoxysilane (Shin-Etsu Silicone) Manufactured by KBE-585, hereinafter referred to as “KBE-585”), a compound represented by the formula (3-a): a component of the following synthesis example 1, a compound represented by the formula (3-c): the following synthesis example 2 A compound represented by formula (3-e):

Synthesis example 1
To a 0.1 L separable flask equipped with a cooler, a stirrer, and a dropping funnel, 8.16 g (35 mmol) of 3-isocyanatopropyltriethoxysilane (manufactured by Shin-Etsu Silicone; KBE-9007) was added dropwise. From the funnel, 4.524 g (35 mmol) of 2-ethylhexylamine (made by Merck) was added dropwise at a rate such that the reaction proceeded at a temperature of the reaction solution of 50 ° C. or less. After completion of the dropwise addition, the disappearance of the peak of isocyanate group near 2260 cm ⁻¹ and the peak due to NH group were observed near 3370 cm ⁻¹ from the IR spectrum of the reaction solution. The reaction product was confirmed by the disappearance of KBE-9007 by thin layer column chromatography on carrier silica gel (developing solvent was hexane, color former was iodine). From these, it was confirmed that an addition product (hereinafter referred to as “C1”) of 2-ethylhexylamine and 3-isocyanatopropyltriethoxysilane was obtained.

Synthesis example 2
To a 0.1 L separable flask equipped with a cooler, a stirrer, and a dropping funnel, 8.16 g (35 mmol) of 3-isocyanatopropyltriethoxysilane (manufactured by Shin-Etsu Silicone; KBE-9007) was added dropwise. From the funnel, 11.56 g of an N-methylpyrrolidone solution containing 2.979 g (35 mmol) of 5-aminotetrazole was added dropwise at such a rate that the reaction proceeded when the temperature of the reaction solution was 50 ° C. or lower. After completion of the dropwise addition, the disappearance of the peak of isocyanate group near 2260 cm ⁻¹ and the peak due to NH group were observed near 3370 cm ⁻¹ from the IR spectrum of the reaction solution. The reaction product was confirmed by the disappearance of KBE-9007 by thin layer column chromatography on carrier silica gel (developing solvent was hexane, color former was iodine). From these, it was confirmed that an addition product (hereinafter referred to as “C2”) of 5-aminotetrazole and 3-isocyanatopropyltriethoxysilane was obtained.

(D) Component having a weight average molecular weight of 10,000 or more Phenoxy resin (manufactured by Tohto Kasei Co., Ltd., trade name “ZX1356-2”, Tg: about 71 ° C., Mw: about 63000, hereinafter referred to as “ZX1356”)

(E) Filler (e-1) Inorganic filler Silica filler (trade name “SE2050” manufactured by Admatechs Co., Ltd., average particle size: 0.5 μm, hereinafter referred to as “SE2050”)
Epoxy silane-treated silica filler (manufactured by Admatechs Co., Ltd., trade name “SE2050-SEJ”, average particle size: 0.5 μm, hereinafter referred to as “SE2050-SEJ”)
Acrylic surface-treated nano silica filler (manufactured by Admatechs Co., Ltd., trade name “YA050C-SM”, average particle size: about 50 nm, hereinafter referred to as “SM nano silica”)
(E-2) Resin filler Organic filler (Rohm and Haas Japan, trade name “EXL-2655”, core-shell type organic fine particles, hereinafter referred to as “EXL-2655”)

(F) Flux agent 2-Methylglutaric acid (manufactured by Aldrich, melting point: about 78 ° C.)

(G) Coupling agent G1: Triethoxysilylpropyl ethyl carbamate (Gelest, SIT-8188.0)

<Production of film-like semiconductor adhesive>
Example 1
3 g of epoxy resin (2.4 g of “EP1032”, 0.45 g of “YL983”, 0.15 g of “YL7175”), 0.1 g of curing agent “2MAOK”, 0.1 g of 2-methylglutaric acid (0.69 mmol) ), 1.9 g of inorganic filler (0.38 g of “SE2050”, 0.38 g of “SE2050-SEJ”, 1.14 g of “SM nanosilica”), 0.25 g of resin filler (EXL-2655), and methyl ethyl ketone (Solid content is 63% by mass), 0.05g of coupling agent, and 0.8mm diameter beads and 2.0mm diameter beads are added in the same mass as the solid content. The mixture was stirred for 30 minutes with a company, planetary pulverizer P-7). Thereafter, 1.7 g of phenoxy resin (ZX1356) was added and stirred again for 30 minutes with a bead mill, and then the beads used for stirring were removed by filtration to obtain a resin varnish.

  The obtained resin varnish is coated on a base film (trade name “Purex A53” manufactured by Teijin DuPont Films Ltd.) with a small precision coating device (Yurui Seiki) and dried in a clean oven (ESPEC). (70 ° C./10 minutes) to obtain a film adhesive.

(Examples 2 to 4, Comparative Example 1)
Film adhesives of Examples 2 to 4 and Comparative Example 1 were produced in the same manner as in Example 1 except that the adhesion assistant (component (c)) was changed as shown in Table 1 below.

(Comparative Example 2)
A film-like adhesive of Comparative Example 2 was produced in the same manner as in Example 1 except that the adhesion assistant (component (c)) was changed to G1 described in Table 1 below.

<Evaluation>
Hereafter, the evaluation method of the film adhesive obtained by the Example and the comparative example is shown.

(Measurement of adhesive strength at 260 ° C before moisture absorption)
The film-like adhesive prepared in the example or comparative example is cut into a predetermined size (vertical 5 mm × horizontal 5 mm × thickness 0.045 mm), and silicon chip (vertical 5 mm × horizontal 5 mm × thickness 0.725 mm, oxide film coating) ) A glass epoxy substrate (thickness 0.02 mm) coated with solder resist (manufactured by Taiyo Ink, trade name “AUS308”) using a thermocompression tester (manufactured by Hitachi Chemical Technoplant Co., Ltd.) (Press-bonding conditions: pressure-bonding head temperature 250 ° C., pressure-bonding time 5 seconds, pressure-bonding pressure 0.5 MPa). Next, after cure (175 ° C., 2 h) in a clean oven (manufactured by ESPEC), a semiconductor device as a test sample was obtained.

  Using an adhesive force measuring device (manufactured by DAGE, universal bond tester DAGE 4000), on the hot plate at 260 ° C., the tool height from the substrate was 0.05 mm and the tool speed was 0.05 mm / s. The adhesive force was measured. The number of measurements was 5 and the average value was determined. The case where the average value was 25 g or more was evaluated as “A”, the case where it was 15 g or more and less than 25 g was evaluated as “B”, and the case where it was less than 15 g was evaluated as “C”.

(Measurement of adhesive strength at 260 ° C after moisture absorption)
A test sample (semiconductor device) produced by the same method as described above was left for 48 hours in a high-temperature humidifier (manufactured by ESPEC, PR-2KP) at 85 ° C. and 60% relative humidity, and then taken out. Next, using an adhesive force measuring device (manufactured by DAGE, universal bond tester DAGE 4000) on a hot plate at 260 ° C. under the conditions of a tool height of 0.05 mm from the substrate and a tool speed of 0.05 mm / s. The adhesion of the test sample was measured. The number of measurements was 5 and the average value was determined. The case where the average value was 25 g or more was evaluated as “A”, the case where it was 15 g or more and less than 25 g was evaluated as “B”, and the case where it was less than 15 g was evaluated as “C”.

(Void evaluation)
About the semiconductor device produced by the method similar to the measurement of the adhesive force, an appearance image was taken with an ultrasonic diagnostic imaging apparatus (trade name “Insight-300”, manufactured by Insight), and scanner GT-9300UF (manufactured by EPSON, The product name) captures an image of the adhesive material layer on the chip (a layer made of a cured product of an adhesive for semiconductors), and uses image processing software Adobe Photoshop to identify voids by color correction and two-level gradation. Was used to calculate the proportion of voids. When the area of the adhesive material portion on the chip is 100%, the void generation rate is 10% or less “A”, the case of more than 10% and 20% or less is “B”, and the case of more than 20% is “C”. As evaluated.

(Reflow resistance evaluation)
A semiconductor device manufactured by the same method as the measurement of the adhesive force was molded using a sealing material (trade name “CEL9750ZHF10” manufactured by Hitachi Chemical Co., Ltd.) under the conditions of 180 ° C., 6.75 MPa, 90 seconds. Then, after-curing at 175 ° C. for 5 hours in a clean oven (manufactured by ESPEC), a package was obtained. Next, this package was subjected to high temperature moisture absorption under JEDEC level 2 conditions, and then passed through an IR reflow furnace (manufactured by FURUKAWA ELECTRIC, trade name “SALAMANDER”) three times. The connectivity of the package after reflow was evaluated by the same method as the void evaluation described above, and the reflow resistance was evaluated. The case where there was no peeling (void) and good adhesiveness was evaluated as “A”, and the case where peeling (void) occurred was evaluated as “B”.

  In the semiconductor device produced using the adhesives for semiconductors of Examples 1 to 4, it was confirmed that the generation of voids was sufficiently suppressed and the reflow resistance was superior to those of Comparative Examples 1 and 2. Moreover, as shown in Comparative Example 2, when a compound having a structure in which an isocyanate group was blocked with an alcohol (urethane bond) was used, adhesion deterioration after moisture absorption was confirmed. This is because the deblocking reaction proceeds during heating in the urethane bond, and the alcohol is desorbed. That is, in the case of the G1 component, when ethanol is generated during deblocking and ethanol volatilizes, This is thought to be because stress was applied in the direction of peeling to the interface between the chip and the substrate. On the other hand, it was confirmed that the adhesives for semiconductors of Examples 1 to 4 have high adhesive strength at 260 ° C. both before and after moisture absorption.

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor chip, 15 ... Wiring (connection part), 20 ... Board | substrate (wiring circuit board), 30 ... Connection bump, 32 ... Bump (connection part), 34 ... Through-electrode, 40 ... Adhesive material, 41 ... Adhesion for semiconductors Agent (film adhesive), 50 ... interposer, 60 ... solder resist, 100, 200, 300, 400, 500, 600 ... semiconductor device.

Claims (6)

The adhesive for semiconductors containing an epoxy resin, a hardening | curing agent, and the compound represented by following General formula (1).

[Wherein R ¹¹ represents a group represented by the following general formula (2), R ¹² each independently represents an alkyl group having 1 to 4 carbon atoms, and R ¹³ each independently represents a hydroxyl group or carbon. The alkyl group of number 1-4 is shown, a shows the integer of 0-3, n shows the integer of 1-6. ]

[Wherein R ² represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an organic group derived from aminoalkylsilane, or a heterocyclic group. ] The compound represented by the general formula (1) is a compound represented by the following general formula (3-a), a compound represented by the following general formula (3-b), and the following general formula (3-c). A compound represented by the following general formula (3-d), a compound represented by the following general formula (3-e), and a compound represented by the following general formula (3-f) The adhesive for semiconductors of Claim 1 containing at least 1 sort (s) chosen from a group.

  The adhesive for semiconductors of Claim 1 or 2 which further contains the component (however, except an epoxy resin) whose weight average molecular weight is 10,000 or more.   The adhesive for semiconductors as described in any one of Claims 1-3 whose shape is a film form. A semiconductor device in which respective connection portions of a semiconductor chip and a printed circuit board are electrically connected to each other, or a manufacturing method of a semiconductor device in which respective connection portions of a plurality of semiconductor chips are electrically connected to each other,
The manufacturing method of a semiconductor device provided with the process of sealing at least one part of the said connection part using the adhesive agent for semiconductors as described in any one of Claims 1-4.   A semiconductor device obtained by the manufacturing method according to claim 5.

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