JP2016115821A5 - - Google Patents
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- JP2016115821A5 JP2016115821A5 JP2014253611A JP2014253611A JP2016115821A5 JP 2016115821 A5 JP2016115821 A5 JP 2016115821A5 JP 2014253611 A JP2014253611 A JP 2014253611A JP 2014253611 A JP2014253611 A JP 2014253611A JP 2016115821 A5 JP2016115821 A5 JP 2016115821A5
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- 239000010949 copper Substances 0.000 claims description 79
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 76
- 229910052802 copper Inorganic materials 0.000 claims description 76
- 239000000919 ceramic Substances 0.000 claims description 44
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 1
- 239000011224 oxide ceramic Substances 0.000 claims 1
- 229910052574 oxide ceramic Inorganic materials 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000005096 rolling process Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- 229920001721 Polyimide Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 210000001519 tissues Anatomy 0.000 description 1
Description
更に、直接接合法で作製した銅張セラミックス回路基板の場合、ろう付で接合した回路基板のようにＡｇ−Ｃｕ−Ｔｉ層のような金属ろう接合層が存在しない。これらの層は 熱応力の緩衝層としての働きが期待できる。また、ポリイミドと銅箔を張り合わせた可撓性銅張積層回路基板では銅の上に電気めっき等によって銅の凹凸を設ける粗化処理がおこなわれ、界面での機械的、熱的性質の急峻な変化を緩和し、アンカー効果による接合強度の向上が図られている。これに対して直接接合法で接合された銅張セラミックス回路基板では、銅板とセラミックス板が直接、あるいはごく薄い銅酸化物層を介して接合される。したがって、セラミックスと銅との界面での熱伝導、すなわち放熱性では優れているが、接合界面での応力の緩和をするためには、使用するセラミックス板、あるいは銅板で何らかの措置を講じる必要があった。 Further, when the copper-clad ceramic circuit substrate manufactured in direct bonding method, brazing metal bonding layer, such as A g-Cu-Ti layer as the circuit board joined by brazing is not present. These layers can be expected to act as thermal stress buffer layers. In addition, a flexible copper-clad laminated circuit board in which polyimide and copper foil are laminated is subjected to a roughening process in which copper irregularities are formed on the copper by electroplating, etc., and the mechanical and thermal properties at the interface are steep. The change is mitigated and the joint strength is improved by the anchor effect. On the other hand, in the copper-clad ceramic circuit board bonded by the direct bonding method, the copper plate and the ceramic plate are bonded directly or via a very thin copper oxide layer. Therefore, although heat conduction at the interface between ceramic and copper, that is, heat dissipation, is excellent, it is necessary to take some measures on the ceramic plate or copper plate to be used in order to relieve stress at the bonding interface. It was.
また、本発明の銅張セラミックス回路基板上の銅板は、銅板面内で力学的な異方性を有するので、銅張セラミックス回路基板界面において最も大きな応力が発生する方向と銅板の面内方向で軟質にふるまう方向を合わせることで、更に信頼性の高い銅張セラミックス回路基板が得られる。一般的に接合面における最大応力は銅回路の角部の対角線方向になることから、この方向と銅板の面内方向で軟質にふるまう方向を合わせることで高い効果が得られる。 In addition, since the copper plate on the copper-clad ceramic circuit board of the present invention has mechanical anisotropy in the copper plate surface, the direction in which the largest stress is generated at the interface of the copper-clad ceramic circuit substrate and the in-plane direction of the copper plate. A more reliable copper-clad ceramic circuit board can be obtained by matching the direction in which it behaves softly. In general, the maximum stress at the joint surface is in the diagonal direction of the corner of the copper circuit, so that a high effect can be obtained by matching the direction in which this direction and the in-plane direction of the copper plate behave softly.
また、結晶学的な方位関係で、降伏応力が高い方位が少なくなるので、銅板１２板面内あらゆる方向に軟質にふるまう。以下、具体的に説明する。
図２は、銅を始めとする面心立方金属の方位を表す単位ステレオ三角形上にシュミット因子を等高線で表示したものである（非特許文献１参照）。
本発明の銅張セラミックス回路基板１０上の銅板１２は、単位格子を構成する[１００]、[０１０]、[００１]（総称して＜１００＞と表記される）の３軸が揃った単結晶に近い材料であり、一つの＜１００＞主方位が銅板１２の法線方向を向いていることから、銅板１２の面内の方位は、図２で示されるステレオ三角形の１００と１１０を結ぶ線上で示される方位のいずれかになる。一般的な圧延で作製した銅の場合、圧延方向、すなわち板面内で通常長手方向に＜１１１＞が配向し易いが、＜１１１＞方向に変形を加えたときのシュミット因子は約０．２７２であり、その値が小さく、降伏に高い応力が必要な方位である。一方、本発明の銅張セラミックス回路基板１０上の銅板１２における面内方向における一次すべり系のシュミット因子の最小値は約０．４０８であり、面内方向の降伏応力は＜１１１＞方向に変形を加えたときに比較して小さくなる。なお、一次すべり系とは、複数のすべり系のうち最も容易にすべり変形がおきる系、すなわちシュミット因子が最大になる系をいう。
In addition, because of the crystallographic orientation relationship, the orientation with high yield stress is reduced, so that it behaves softly in all directions within the copper plate 12 plane. This will be specifically described below.
FIG. 2 shows a Schmid factor displayed by contour lines on a unit stereo triangle representing the orientation of a face-centered cubic metal such as copper (see Non-Patent Document 1).
The copper plate 12 on the copper-clad ceramic circuit board 10 of the present invention has a single axis with three axes [100], [010], and [001] (collectively denoted as <100>) constituting a unit cell. Since it is a material close to a crystal and one < 100 > main orientation faces the normal direction of the copper plate 12, the in-plane orientation of the copper plate 12 connects the stereo triangles 100 and 110 shown in FIG. One of the orientations shown on the line. In the case of copper produced by general rolling, <111> tends to be oriented in the rolling direction, that is, the normal longitudinal direction in the plate surface, but the Schmid factor when deformed in the <111> direction is about 0.272. The value is small and the direction requires high stress for yielding. On the other hand, the minimum value of the Schmid factor of the primary slip system in the in-plane direction of the copper plate 12 on the copper-clad ceramic circuit board 10 of the present invention is about 0.408, and the yield stress in the in-plane direction is deformed in the <111> direction. It becomes smaller compared to when adding. The primary slip system is a system in which slip deformation occurs most easily among a plurality of slip systems, that is, a system in which the Schmid factor is maximized.
セラミックス板１１と銅板１２の接合方法としては、ＴｉやＺｒの活性化金属を含む銅より融点の低い例えばＡｇ−Ｃｕ合金のような金属ろう材をセラミックス板１１と銅板１２の間に挟んで液相接合する活性金属法や、セラミックス板１１と銅板１２の面同士を対向、接触させて、１０５０℃以上の温度で界面にＣｕ−Ｃｕ２Ｏ共晶体を生成せしめ、その後冷却することによって接合する直接接合法がある。いずれの場合でも、銅張セラミックス回路基板１０の製造工程では、銅とセラミックスの接合工程で非常に高い温度が必要であるから、銅板１２の最終再結晶熱処理は接合工程で同時に行うことができる。本発明の銅張セラミックス回路基板１０の作製で想定している比較的純度の高い銅板１２では４００℃以下、無酸素銅板であれば２００℃以下で再結晶するため、最終再結晶熱処理前の銅板１２をセラミックス板１１に対向、接触させておくことで、高温で接合が形成される時には、銅板１２も所定の組織が形成されている。 As the bonding method of the ceramics plate 11 and the copper plate 12, sandwiching the metal brazing material such as Ti and Zr activated metal lower e.g. Ag-Cu alloy having a melting point of copper containing between ceramic plate 11 and the copper plate 12 By the active metal method in which liquid phase bonding is performed, or by causing the surfaces of the ceramic plate 11 and the copper plate 12 to face and contact each other to form a Cu—Cu 2 O eutectic at the interface at a temperature of 1050 ° C. or higher, and then cooling. There is a direct joining method to join. In any case, since the manufacturing process of the copper-clad ceramic circuit board 10 requires a very high temperature in the copper-ceramic bonding process, the final recrystallization heat treatment of the copper plate 12 can be performed simultaneously in the bonding process. Since the copper plate 12 of relatively high purity assumed in the production of the copper-clad ceramic circuit board 10 of the present invention is recrystallized at 400 ° C. or lower and the oxygen-free copper plate at 200 ° C. or lower, the copper plate before the final recrystallization heat treatment When the bond is formed at a high temperature by facing and contacting the ceramic plate 12 with the ceramic plate 11, the copper plate 12 also has a predetermined structure.
本発明の銅張セラミックス回路基板上の銅板は、銅板面内で力学的な異方性を有するので、セラミックス回路基板界面において最も大きな応力が発生する方向と銅板の面内方向で軟質にふるまう方向を合わせることで、更に信頼性の高い銅張セラミックス回路基板が得られる。一般的に接合面における最大応力は銅回路の角部の対角線方向になることから、この方向と銅板の面内方向で軟質にふるまう方向を合わせることで高い効果が得られる。 Since the copper plate on the copper-clad ceramic circuit board of the present invention has mechanical anisotropy in the copper plate surface, the direction in which the greatest stress is generated at the interface of the ceramic circuit substrate and the direction in which the copper plate softly behaves in the in-plane direction of the copper plate. By combining the above, a more reliable copper-clad ceramic circuit board can be obtained. In general, the maximum stress at the joint surface is in the diagonal direction of the corner of the copper circuit, so that a high effect can be obtained by matching the direction in which this direction and the in-plane direction of the copper plate behave softly.
図６に示す寸法の銅張セラミックス回路基板を作製して、本発明の更なる効果を調べた。図中の寸法数値の単位はｍｍである。セラミックス板はサイズが４０ｍｍ×１０ｍｍ×０．２５ｍｍ厚の市販の純度９６％のアルミナ板を使用した。
実施例における銅板Ａの切り出し方向を変えてその効果を調べた。銅板回路コーナー部を形成する互いに９０°の角度をなす２辺と４５°を成す直線に対する圧延方向の角度（α）を様々に変えて銅張セラミックス回路基板を作製し、その角度の効果を調べた。比較のために銅板Ｂを接合した銅張セラミックス回路基板も作製した。
冷間加工後の板厚０．２ｍｍの銅板Ａを圧延方向に対して様々な角度をつけて４０ｍｍ×１０ｍｍに切断した後、２００℃で１時間熱処理して表面を酸化させた後、同じ種類の２枚の銅板でアルミナ板を挟んで、接合熱処理を行った。また、銅板Ｂは、圧延方向と１０ｍｍの長さの辺の角度を４５°、０°にした２種類の銅板を切り出し、接合用銅板とした。
接合熱処理は、窒素ガスと乾燥空気の流量を制御できる電気炉で行った。始め酸素分圧を２００ｐｐｍに調整した窒素ガスを通気させながら１０７０℃まで昇温し、１時間保定した後、０．５℃／分で１０２０℃まで降温し、その後炉冷却した。途中、１０５０℃で乾燥空気を遮断し、１００％窒素中で熱処理した。作製した接合体は、酸によるエッチング処理によって図６に示すような銅張セラミックス回路基板試料とした。
銅板Ａ、銅板Ｂについて、同じ切断角度条件の銅張セラミックス回路基板試料をそれぞれ３０枚づつ作製し、銅板組織、接合信頼性の評価を行った。
A copper-clad ceramic circuit board having the dimensions shown in FIG. The unit of the numerical value in the figure is mm. As the ceramic plate, a commercially available alumina plate having a size of 40 mm × 10 mm × 0.25 mm and having a purity of 96% was used.
The effect was investigated by changing the cutting direction of the copper plate A in the examples . Angle in the rolling direction with respect to the straight line forming the two sides and 45 ° an angle of one another 90 ° to form a copper plate circuit corner portion (alpha) variously changed to prepare a copper-clad ceramic circuit board, the effect of the angle Examined. For comparison, a copper-clad ceramic circuit board joined with a copper plate B was also produced.
After the cold-worked copper plate A having a thickness of 0.2 mm is cut into 40 mm × 10 mm at various angles with respect to the rolling direction, the surface is oxidized by heat treatment at 200 ° C. for 1 hour, and then the same type These two copper plates were sandwiched between alumina plates and subjected to bonding heat treatment. Moreover, the copper plate B cut out the two types of copper plates which made the angle of the side of a rolling direction and the length of 10 mm 45 degrees and 0 degrees, and was set as the copper plate for joining.
The bonding heat treatment was performed in an electric furnace capable of controlling the flow rates of nitrogen gas and dry air. First, the temperature was raised to 1070 ° C. while a nitrogen gas whose oxygen partial pressure was adjusted to 200 ppm was passed, maintained for 1 hour, then lowered to 1020 ° C. at 0.5 ° C./min, and then cooled in the furnace. In the middle, dry air was shut off at 1050 ° C. and heat treatment was performed in 100% nitrogen. The produced joined body was made into a copper-clad ceramic circuit board sample as shown in FIG. 6 by etching with acid.
About the copper plate A and the copper plate B, the copper-clad ceramic circuit board sample of the same cutting angle conditions was produced 30 sheets each, and the copper plate structure | tissue and joining reliability were evaluated.
Claims (7)
前記銅回路を備えている前記銅板は、結晶軸＜１００＞を主方位とし、かつ銅の結晶軸＜１００＞が前記銅板の法線方向に方位差１５°以内でありかつ前記銅板の面内特定方向に１５°以内である＜１００＞優先配向領域の面積率が８０％以上１００％以下の配向銅板であることを特徴とする銅張セラミックス回路基板。 Piece Menmata ceramic plate is joined copper plate on both sides, and at least a portion of the copper plate in a copper-clad ceramic circuit board comprises a copper circuit,
The copper plate provided with the copper circuit has a crystal axis <100> as a main orientation, a copper crystal axis <100> having an orientation difference within 15 ° in the normal direction of the copper plate, and an in-plane of the copper plate A copper-clad ceramic circuit board characterized by being an oriented copper plate in which the area ratio of the <100> preferentially oriented region that is within 15 ° in a specific direction is 80% or more and 100% or less.
熱処理済の前記セラミックス板と前記配向銅板とを冷却してこれらを接合させる接合工程と、A bonding step of cooling and bonding the heat-treated ceramic plate and the oriented copper plate;
前記配向銅板にエッチング処理により銅回路を形成する銅回路形成工程と、を備え、A copper circuit forming step of forming a copper circuit by etching treatment on the oriented copper plate,
前記セラミックス板は、ケイ素、マグネシウム、希土類元素から選択される少なくとも１の成分を５質量％以下含有している窒化ケイ素又は窒化アルミニウムからなる窒化物セラミックス、又は、酸化物セラミックスであり、The ceramic plate is a nitride ceramic made of silicon nitride or aluminum nitride containing 5% by mass or less of at least one component selected from silicon, magnesium, and a rare earth element, or an oxide ceramic.
前記配向銅板は、結晶軸＜１００＞を主方位とし、かつ銅の結晶軸＜１００＞が前記銅板の法線方向に方位差１５°以内でありかつ前記銅板の面内特定方向に１５°以内である＜１００＞優先配向領域の面積率が８０％以上１００％以下であることを特徴とする銅張セラミックス回路基板の製造方法。The oriented copper plate has a crystal axis <100> as a main orientation, and the copper crystal axis <100> has an orientation difference within 15 ° in the normal direction of the copper plate and within 15 ° in a specific direction within the plane of the copper plate. <100> The method for producing a copper-clad ceramic circuit board, wherein the area ratio of the preferentially oriented region is 80% or more and 100% or less.
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| US20220009842A1 (en) * | 2018-11-22 | 2022-01-13 | Denka Company Limited | Ceramic-copper composite, method of producing ceramic-copper composite, ceramic circuit board, and power module |
| JP7212700B2 (en) * | 2018-12-28 | 2023-01-25 | デンカ株式会社 | CERAMIC-COPPER COMPOSITE, CERAMIC CIRCUIT BOARD, POWER MODULE, AND CERAMIC-COPPER COMPOSITE MANUFACTURING METHOD |
| EP3922391B1 (en) * | 2019-02-04 | 2023-09-20 | Mitsubishi Materials Corporation | Production method for copper/ceramic joined body, production method for insulated circuit board, copper/ceramic joined body, and insulated circuit board |
| CN117457504B (en) * | 2023-12-22 | 2024-03-08 | 成都万士达瓷业有限公司 | Production method for copper-clad ceramic packaging surface |
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| JP3211856B2 (en) * | 1994-11-02 | 2001-09-25 | 電気化学工業株式会社 | Circuit board |
| JP2002043481A (en) * | 2000-07-19 | 2002-02-08 | Sumitomo Metal Ind Ltd | Ceramic module and its manufacturing method |
| JP4763068B2 (en) * | 2008-06-30 | 2011-08-31 | 新日鐵化学株式会社 | Flexible circuit board, manufacturing method thereof, and bent portion structure of flexible circuit board |
| JP2013055264A (en) * | 2011-09-05 | 2013-03-21 | Toshiba Corp | Manufacturing method of ceramic copper circuit board |
| JP6425404B2 (en) * | 2014-04-16 | 2018-11-21 | 株式会社Ｓｈカッパープロダクツ | Copper alloy material for ceramic wiring substrate, ceramic wiring substrate, and method of manufacturing ceramic wiring substrate |
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