JP2016115688A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
JP2016115688A
JP2016115688A JP2013079219A JP2013079219A JP2016115688A JP 2016115688 A JP2016115688 A JP 2016115688A JP 2013079219 A JP2013079219 A JP 2013079219A JP 2013079219 A JP2013079219 A JP 2013079219A JP 2016115688 A JP2016115688 A JP 2016115688A
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Prior art keywords
light emitting
light
element
emitting element
formed
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JP2013079219A
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Japanese (ja)
Inventor
毅斉 尾之江
毅斉 尾之江
良幸 則光
良幸 則光
明浩 中村
明浩 中村
雅弘 林
雅弘 林
康宏 柳樂
康宏 柳樂
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パナソニック株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 and H01L51/00, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 and H01L51/00, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/10155Shape being other than a cuboid
    • H01L2924/10158Shape being other than a cuboid at the passive surface
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements

Abstract

A light emitting device capable of reducing the influence of other elements on light emission of a light emitting element while maintaining the size is provided. A light-emitting device includes a flip-chip light-emitting element that is supplied with power by a p-side terminal and an n-side terminal to emit light from a light-emitting region corresponding to the p-side terminal, and the light-emitting element. 30, a protection element 40 for protecting the light emitting element 30, and a submount substrate 20 on which the light emitting element 30 and the protection element 40 are mounted as mounting elements. Since the protection element 40 is mounted on the submount substrate 20 adjacent to the non-light emitting area S2 formed by forming the n-side terminal 33 on the light emitting element 30, it is emitted from the light emitting area S1 of the light emitting element 30. It does not block or absorb the light to the side, and does not affect it. [Selection] Figure 2

Description

  In the present invention, a flip chip type light emitting element that emits light when power is supplied from a plurality of electrodes, and one or more other elements arranged adjacent to the light emitting element are mounted on a substrate and sealed. The present invention relates to a light emitting device.

  As a light emitting device, for example, for the purpose of protecting a light emitting element, other elements are also mounted on a substrate together and sealed in a resin sealing portion for the purpose of protecting the light emitting element (Patent Document). 1 and 2).

  The semiconductor light-emitting device described in Patent Document 1 is an LED element and a Zener diode that are flip-mounted on the upper surface of a circuit board, and is formed of a white ink obtained by kneading a metal film, reflective fine particles, and a binder. The reflective layer is provided on the surface opposite to the surface where the circuit board and the Zener diode are connected.

  In the light emitting device described in Patent Document 2, a light emitting element and a Zener diode are mounted on an insulating substrate formed by bonding a first substrate and a second substrate, and the light emitting element is mounted on the first substrate. By mounting the diode on the second substrate, a storage portion for storing the Zener diode is formed, and the light emitted from the light emitting element to the side is prevented from being obstructed by the Zener diode.

JP 2012-15437 A JP 2008-85113 A

  However, in the semiconductor light emitting device described in Patent Document 1, since the Zener diode is not optically considered and is mounted adjacent to the LED element, the Zener diode is mounted on the side of the LED element. ing. In such a mounting position, the lateral light emitted from the LED element is blocked by the Zener diode.

  In the light emitting device described in Patent Document 2, the Zener diode is mounted at a position one step lower than the light emitting element due to optical considerations. However, in order to lower the Zener diode by one step from the mounting position of the light emitting element, the thickness of the insulating substrate needs to be equal to or greater than the thickness of the Zener diode. Therefore, the light emitting device described in Patent Document 2 is thicker than the semiconductor light emitting device described in Patent Document 1.

  In view of the above, an object of the present invention is to provide a light emitting device capable of reducing the influence of other elements on the light emission of the light emitting element while maintaining the size.

  The light-emitting device of the present invention includes a flip-chip light-emitting element that is supplied with power by the first electrode and the second electrode and emits light from a light-emitting region corresponding to the first electrode, and adjacent to the light-emitting element. And a base on which the light emitting element and the other element are mounted as a mounting element, and the other element is formed by forming the second electrode on the light emitting element. It is mounted on the substrate so as to be adjacent to a non-light emitting region that can be formed.

  According to the light emitting device of the present invention, the other elements do not block or absorb the light emitted from the light emitting region of the light emitting elements and do not affect them, so that the mounting position of the other elements is not affected. There is no need to lower the light emitting element by one step, and the thickness of the substrate need not be increased. Therefore, the light emitting device of the present invention can reduce the influence of other elements on the light emission of the light emitting element while maintaining the size.

The front view of the light-emitting device which concerns on Embodiment 1 of this invention FIG. 1 is a plan view of the light emitting device shown in FIG. The top view which shows the submount board | substrate of the light-emitting device shown in FIG. The front view of the light emitting element of the light-emitting device shown in FIG. The bottom view of the light emitting element of the light-emitting device shown in FIG. 1 is a circuit diagram for explaining a connection between a light emitting element and a protective element of the light emitting device shown in FIG. Front view of light-emitting device according to Embodiment 2 of the present invention

  According to a first aspect of the present invention, a flip-chip light emitting element in which power is supplied by a first electrode and a second electrode and a light emitting region corresponding to the first electrode emits light, and the light emitting element Another element disposed adjacent to the light emitting element and a base on which the other element is mounted as a mounting element, wherein the second electrode is formed on the light emitting element. The light-emitting device is mounted on the base so as to be adjacent to a non-light-emitting region.

  According to the first invention, since the other element is disposed adjacent to the non-light emitting region formed by forming the second electrode on the light emitting element, the other element is separated from the light emitting region of the light emitting element. There is no effect because the emitted light to the side is not blocked or absorbed. Therefore, it is not necessary to lower the mounting position of other elements from that of the light emitting element, so that the thickness of the substrate does not have to be increased.

  According to a second invention of the present application, in the first invention, the light emitting element is formed in a rectangular shape, the second electrode is formed in a corner portion, and the other elements are on a virtual extension line of a diagonal line of the light emitting element. A light-emitting device that is mounted.

  According to the second invention, since the second electrode is formed at the corner of the light emitting element formed in the rectangular shape, if another element is mounted on the virtual extension line of the diagonal line of the light emitting element, When the element is disposed adjacent to the light emitting element, it can correspond to a non-light emitting region.

  According to a third invention of the present application, in the first or second invention, a fluorescent part containing a phosphor is formed in a wider range than the light emitting element, and the fluorescent part includes a part or all of other elements. It is the light-emitting device characterized by this.

  According to the third invention, when the fluorescent portion receives light from the light emitting element, not only the periphery of the light emitting element but also the phosphor around the other element emits light. Can also emit light brightly. Therefore, even if the protective element is disposed adjacent to the non-light emitting region of the light emitting element, the phosphor in the resin sealing portion emits light, so that a light emitting device with high light emission efficiency can be obtained.

  A fourth invention of the present application is the light emitting device according to the third invention, wherein the fluorescent part contains a phosphor in a resin sealing part for sealing the light emitting element and other elements.

  According to the fourth invention, if a phosphor is contained in the resin sealing portion that seals the light emitting element and the other element, the fluorescent part containing the phosphor around the light emitting element and the other element is provided. It can be formed, and the phosphors above the other elements can be made to emit light brighter.

  According to a fifth invention of the present application, in the third invention, the fluorescent part is formed by a sheet member that covers the top surface of the light emitting element and a part or all of the top surface of the other element. A light emitting device.

  According to the fifth invention, the fluorescent part is formed by the sheet member that covers the top surface of the light emitting element and a part or all of the top surface of the other element, so that the fluorescent material in which the phosphor is uniformly dispersed is provided. Since the thickness of the part can be made uniform, variation in wavelength conversion of light can be suppressed.

  A sixth invention of the present application is the light emitting device according to the fifth invention, wherein a reflecting portion is formed around the light emitting element and other elements.

  According to the sixth invention, since the reflection portion is formed around the light emitting element and the other elements, the light from the light emitting element can be returned to the light emitting element side without being influenced by the other elements. it can. In addition, even if the reflection part is formed, for example, if another element is adjacent to the light emitting region of the light emitting element, the other element absorbs light from the fluorescent part located immediately above, and the fluorescent part By reducing the light emission of the part, it becomes a dark part. However, since the other elements are arranged adjacent to the non-light emitting area of the light emitting element, the light emission of the fluorescent part outside the light emitting area is not hindered, so that the light emission efficiency of the fluorescent part can be prevented from being lowered. .

  A seventh invention of the present application is the light emitting device according to any one of the first to sixth inventions, wherein the fluorescent part is formed with a diffusion part for scattering light from the light emitting element.

  According to the seventh invention, by diffusing the light from the fluorescent part, the light from the light emitting element that has passed through the fluorescent part and the yellow light emitted in all directions by the fluorescent substance can be mixed in a balanced manner. Therefore, it can be white with suppressed color unevenness.

(Embodiment 1)
A light emitting device according to Embodiment 1 of the present invention will be described with reference to the drawings.

  The light emitting device 10 shown in FIGS. 1 and 2 includes a submount substrate 20 that is a base, a light emitting element 30, a protective element 40 that is another element, a resin sealing portion 50, and a diffusion portion 60. Yes.

  As shown in FIG. 3, the submount substrate 20 has a wiring pattern 22 formed on the mounting surface of the insulating substrate 21. The wiring pattern 22 is formed by a first U-shaped pattern 22a and a second U-shaped pattern 22b. In FIG. 1, the wiring pattern 22 is not shown.

  The submount substrate 20 uses the wiring pattern 22 as an element electrode, and the light emitting element 30 and the protection element 40 are mounted on the element electrode as a mounting element. The element electrode is connected to a connection electrode (not shown) formed on the bottom surface of the insulating substrate 21 via a through-hole electrode. As the insulating substrate 21, for example, glass epoxy resin, BT resin (bismaleimide triazine resin-based thermosetting resin), ceramic, or the like can be used.

  The light emitting element 30 is a flip chip type light emitting diode. The light emitting element 30 is conductively mounted on the element electrode formed on the mounting surface of the submount substrate 20 via the bumps B.

  As shown in FIG. 4, the light emitting element 30 includes a substrate 31, a semiconductor layer 32, an n-side terminal 33 (second electrode), and a p-side terminal 34 (first electrode). The substrate 31 serves to hold the semiconductor layer, and a surface opposite to the surface on which the semiconductor layers are stacked is a light emitting surface that emits light. As the material of the substrate, insulating sapphire, GaN, SiC, AlGaN, AlN, or the like can be used. The top surface of the substrate 31 has a microtexture structure by making it a rough surface with minute irregularities by etching, blasting, processing with a laser or a dicing blade, or the like. When the substrate 31 is made of sapphire or the like and has a lower refractive index than GaN, the substrate 31 may be formed with a flat surface.

  The semiconductor layer 32 is formed by sequentially stacking an n-type layer 32 a, a light emitting layer 32 b, and a p-type layer 32 c on the substrate 31. The material of the semiconductor layer 32 is preferably a gallium nitride compound. Specifically, the n-type layer 32a is GaN, the light-emitting layer 32b is InGaN, the p-type layer 32c is GaN, and the like. As the n-type layer 32a and the p-type layer 32c, Al, In, Ga, and N-based materials can also be used. It is also possible to form a buffer layer made of GaN or InGaN between the n-type layer 32a and the substrate 31. Further, for example, the light emitting layer 32b may have a multilayer structure (quantum well structure) in which InGaN and GaN are alternately stacked.

  The n-side terminal 33 removes the light-emitting layer 32b and the p-type layer 32c from a part of the n-type layer 32a, the light-emitting layer 32b, and the p-type layer 32c laminated on the substrate 31, and exposes the n-type layer 32a. It is formed on this exposed n-type layer 32a. The p-side terminal 34 is formed on the p-type layer 32c. The p-side terminal 34 is a terminal formed of Ag, Al, Rh or the like having a high reflectivity in order to reflect the light emitted from the light emitting layer 32b to the substrate 31 side.

  Here, the p-side terminal 34 and the n-side terminal 33 will be described with reference to FIG.

  As shown in FIG. 5, the n-side terminal 33 is formed at each corner of the rectangular substrate so that the circular arc side of the fan faces inward. The p-side terminal 34 is formed in a region excluding the corner fan from the rectangle. Accordingly, the area of the top surface of the substrate 31 corresponding to the p-side terminal 34 and the side surface of the semiconductor layer 32 becomes the light-emitting region S1, and the light-emitting layer 32b is removed by the n-side terminal 33, thereby corresponding to the n-side terminal 33. The area | region of the top | upper surface of the board | substrate 31 and the side surface of the board | substrate 31 becomes non-light-emission area | region S2.

  The protection element 40 is for preventing an excessive voltage from being applied to the light emitting element 30 as shown in FIGS. 1 and 2. In the present embodiment, a Zener diode is connected to the light emitting element 30 as the protection element 40. Since the n-side terminal 33 is formed at the corner portion of the light emitting element 30 that is formed in a rectangular shape, the protection element 40 is mounted on the diagonally extending virtual extension line L of the light emitting element 30. A circuit diagram in a state where the light emitting element 30 is connected to the protective element 40 is shown in FIG. In the first embodiment, the protective element 40 is the Zener diode ZD, but it may be a diode, a varistor, a capacitor, a resistor, or the like.

  As shown in FIGS. 1 and 2, the resin sealing portion 50 is formed so as to cover the entirety of the light emitting element 30 and the protection element 40. The resin sealing portion 50 includes a phosphor that converts a wavelength to light that is excited by light from the light emitting element 30 and becomes complementary color in a transparent medium that is a main material such as resin or glass or ceramics. Functions as a fluorescent part.

  For example, if the light emitting element 30 is a blue light emitting element that emits blue light, the phosphor may emit yellow light. By including the phosphor that emits yellow light in the resin sealing portion 50, the blue light from the light emitting element 30 and the yellow light from the phosphor are mixed, so that white light can be obtained. As the phosphor, a silicate phosphor or a YAG phosphor can be used.

  As the transparent medium, for example, a resin mainly composed of a silicone resin, an epoxy resin, and a fluororesin, or a glass material produced by a sol-gel method can be used. Some glass materials have a curing reaction temperature of about 200 degrees Celsius, and can be said to be a suitable material in consideration of heat resistance of materials used for bumps and terminals.

  The diffusing portion 60 contains a diffusing material that diffuses light from the resin sealing portion 50 in a transparent medium mainly composed of resin. The diffusing material can be, for example, particulate silicon dioxide or ceramic. The transparent medium can be a silicone resin, glass, acrylic resin, or the like. The diffusing unit 60 can be formed by attaching a sheet member containing a diffusing material in a transparent medium to the resin sealing unit 50 or applying a transparent medium containing a diffusing material by a printing method.

  The usage state of the light-emitting device 10 according to Embodiment 1 of the present invention configured as described above will be described.

  When power is supplied to the light emitting device 10 shown in FIGS. 1 and 2, the light emitting region S1 of the light emitting element 30 emits light. The light emitting device 10 is equipped with a protective element 40 for protecting the light emitting element 30. The protective element 40 is formed by removing the light emitting layer 32b when the n-side terminal 33 is formed on the light emitting element 30. Since the protective element 40 is arranged adjacent to the non-light emitting region S2, the protective element 40 does not block or absorb the light emitted from the light emitting region S1 of the light emitting element 30 to the side, so that there is no influence.

  In particular, in the light emitting device 10 according to the first embodiment, the n-side terminal 33 is formed at the corner of the light emitting element 30 formed in a rectangular shape. Therefore, by mounting the protection element 40 on the virtual extension line L of the diagonal line of the light emitting element 30, it is possible to correspond to the non-light emitting region S2 when the protection element 40 is disposed adjacent to the light emitting element 30. .

  Therefore, since it is not necessary to lower the mounting position of the protection element 40 from the light emitting element 30, the thickness of the submount substrate 20 does not need to be increased. Therefore, the light emitting device 10 maintains the size of the conventional light emitting device. However, the influence of the protective element 40 on the light emission of the light emitting element 30 can be reduced.

  By making the resin sealing portion 50 contain a fluorescent substance and function as a fluorescent part, a fluorescent part containing the fluorescent substance around the light emitting element 30 and the protective element 40 can be formed. Blue light from the light emitting element 30 enters the resin sealing portion 50 and becomes light that passes through the diffusion portion 60 and light that excites the phosphor in the resin sealing portion 50.

  Since the resin sealing portion 50 containing the phosphor is wider than the light emitting element 30 and is formed so as to include all of the protective element 40, when the light from the light emitting element 30 is received, the light emitting element 30. Since the phosphor around the protective element 40 is excited and emits light, not only around the light emitting element 30, but also around the n-side terminal 33 of the light emitting element 30 emits light brightly. Therefore, even if the protective element 40 is disposed adjacent to the non-light emitting region S2 of the light emitting element 30, the phosphor of the resin sealing portion 50 emits light, so that a wide light emitting area can be secured and the light emitting efficiency can be increased. A good light emitting device 10 can be obtained.

  Further, since the diffusion portion 60 is formed on the top surface of the light emitting device 10 and on the upper surface of the resin sealing portion 50, the resin sealing portion 50 is diffused by diffusing light from the resin sealing portion 50. Since the blue light that has passed through and the yellow light emitted in all directions by the phosphor can be mixed in a well-balanced manner, the color can be white with reduced color unevenness. Therefore, the light emitting device 10 can suppress uneven color of light emitted from the diffusion unit 60 to the outside while suppressing variations in wavelength conversion in the resin sealing unit 50.

  Furthermore, if the diffusion part 60 is formed of a sheet member, the sheet member having a predetermined thickness is only pasted, so that the degree of diffusion can be made uniform.

  In addition, since the top surface of the substrate of the light emitting element 30 is formed as a concavo-convex surface by the microtexture structure, the return light that is totally reflected by the top surface of the light emitting element 30 and returns to the light emitting element 30 may be reduced. Therefore, the light extraction efficiency of the light emitting element 30 can be improved. Accordingly, the light emission intensity in the direction directly above the light emitting element 30 can be increased.

(Embodiment 2)
Next, a light-emitting device according to Embodiment 2 of the present invention will be described with reference to the drawings. In FIG. 7, the same components as those in FIG.

  As shown in FIG. 7, in the light emitting device 10 x, the fluorescent part 70 and the diffusing part 60 are formed on the top surface of the light emitting element 30, and the reflecting part 80 is formed around the light emitting element 30 and the protective element 40. Yes.

  The fluorescent part 70 and the diffusing part 60 have a two-layer structure in which a sheet-like light-transmitting member contains a phosphor and a diffusing material, respectively, and is bonded to the top surface of the light emitting element 30 with an adhesive. This is a sheet member. The fluorescent part 70 and the diffusing part 60 are bonded together in a manufacturing process in a state where they are in close contact with each other by being laminated on the other layer. The sheet member is formed so as to be larger than the top surface of the light emitting element 30 and partially cover the protection element 40.

  As the adhesive for bonding the fluorescent part 70 and the diffusion part 60 together, a silicone resin material can be used. If the diffusion part 60 is formed of a silicone resin and the adhesive is made of a silicone resin, refraction and reflection upon incidence on the diffusion part 60 can be reduced.

  The reflection unit 80 is a region on the submount substrate 20 on which the light emitting element 30 is mounted, and is a region around the light emitting element 30, the fluorescent unit 70, and the diffusion unit 60 in the remaining region of the mounting region of the light emitting element 30. Is formed so as to surround the protective element 40 and to have a height at which the diffusion portion 60 is exposed. The reflecting portion 80 is a granular reflecting material that reflects light from the light emitting element 30 in a transparent medium such as epoxy resin, acrylic resin, polyimide resin, urea resin, silicone resin, fluororesin, or a main material such as glass. Are dispersed. The reflecting part 80 can be formed by curing a liquid resin containing titanium oxide or zinc oxide particles and a dispersant as a reflecting material that reflects light. By forming the reflecting portion 80 by curing a liquid resin containing powdered titanium oxide and a dispersant, the reflecting portion 80 can be provided with a reflecting function while maintaining insulation. Moreover, when forming the reflection part 80, you may add a thixotropy imparting agent to liquid resin for the purpose of improving fluidity | liquidity. As the thixotropy-imparting agent, for example, fine powder silica can be used.

  In Embodiment 2, titanium oxide is used as the reflective material, but zinc oxide, aluminum oxide, silicon dioxide, boron nitride, or the like can also be used as the reflective material. That is, the reflective material can be used as long as it is a metal oxide having an insulating property and a reflective function.

  A method for manufacturing the light emitting device 10x according to Embodiment 2 of the present invention configured as described above will be described.

  First, the light emitting element 30 and the protection element 40 are mounted on the submount substrate 20 via the bumps B. Next, an adhesive is applied to the top surface of the light emitting element 30, and the single fluorescent part 70 and the diffusing part 60 formed in a size larger than the light emitting element 30 are attached. Since the fluorescent part 70 and the diffusing part 60 are a single sheet member, they can be easily attached to the light emitting element 30.

  Next, a resin (reflective material-containing resin) containing a reflective material that becomes the reflective portion 80 is filled and cured by a printing method or a potting method. At this time, the reflecting material-containing resin is filled so that the fluorescent part 70 and the diffusing part 60 are covered.

  Then, until the diffusing portion 60 is exposed, the cured reflective material-containing resin is cut to form the reflecting portion 80, and the height positions of the diffusing portion 60 and the reflecting portion 80 are aligned.

  Thus, by cutting and matching the height positions of the diffusing unit 60 and the reflecting unit 80, the reflecting unit 80 becomes lower than the diffusing unit 60, and light leaks from the side surface of the diffusing unit 60. It can be prevented that the diffusion part 60 is covered and the emission of light is blocked.

  Thus, by covering the periphery of the protective element 40 which is another element with the reflecting portion 80, the light traveling from the light emitting element 30 toward the protective element 40 can be returned to the light emitting element 30, and from the top surface of the light emitting element 30. Can be emitted.

  Even if the reflection part 80 is formed, for example, if the protection element 40 is adjacent to the light emitting region S1 of the light emitting element 30, the protection element 40 absorbs light from the fluorescent part 70 located immediately above. By reducing the light emission of the fluorescent part 70, it becomes a dark part. However, since the protective element 40 is disposed adjacent to the non-light emitting area S2 of the light emitting element 30, it does not hinder the light emission of the fluorescent portion 70 outside the light emitting area S1. Therefore, it is possible to prevent a decrease in the light emission efficiency of the fluorescent part 70.

  The blue light from the light emitting element 30 is incident on the fluorescent portion 70 and becomes light that passes through the fluorescent portion 70 and passes through the diffusing portion 60 and light that excites the phosphor. The fluorescent portion 70 is a part of the sheet member. Since the thickness of the fluorescent part 70 can be made uniform because it is formed in a sheet shape, variations in the degree of wavelength conversion by the phosphor can be suppressed. Moreover, since the diffusion part 60 is formed in a sheet shape as a part of the sheet member, the thickness of the diffusion part 60 can be made uniform. Accordingly, since the degree of diffusion by the diffusion unit 60 can be made uniform as a whole, color unevenness can be further suppressed. Therefore, the light emitting device 10x can suppress color unevenness of light emitted from the diffusion unit 60 to the outside while suppressing variation in wavelength conversion in the fluorescent unit 70.

  Since the sheet member is larger than the top surface of the light emitting element 30, it is possible to secure a wide area of light emission by the fluorescent portion 70. Therefore, the light emitting device 10x with high luminance can be obtained.

  In the first and second embodiments, the submount substrate 20 is described as an example of the base body. However, a lead frame formed of a thin metal plate may be used. In addition, although one protection element 40 is mounted on the submount substrate 20 as another element, two to four protection elements are provided adjacent to the n-side terminal 33 at each corner of the light emitting element 30. Other elements may be arranged.

  Further, although the protection element 40 is disposed on the diagonal virtual extension line L of the light emitting element 30, the light from the light emitting area S 1 is adjacent to the non-light emitting area S 2 of the light emitting element 30 even if there is a slight deviation. Any position that does not shield or absorb the light may be used.

  Further, the light emitting element 30 emits blue light and the phosphor emits yellow light which is a complementary color of blue light. However, the light emitting element emits ultraviolet light or other colors. Can emit light. In addition, the phosphor may emit other colors.

  Further, in the first and second embodiments, the light emitting element 30 has four n-side terminals 33 as an example, but one to three light emitting elements having five or more n-side terminals may be used. In addition, the first electrode is an n-side terminal and the second electrode is a p-side terminal. However, if the non-light-emitting region is a light-emitting element corresponding to the p-side terminal, the first electrode is a p-side terminal. The second electrode may be an n-side terminal.

  The present invention can reduce the influence of other elements on the light emission of the light emitting element while maintaining the size. Therefore, a flip chip type light emitting element that emits light by being supplied with power by a plurality of electrodes, It is suitable for a light emitting device in which one or more other elements arranged adjacent to the light emitting element are mounted on a base and sealed.

10, 10x light emitting device 20 submount substrate 21 insulating substrate 22 wiring pattern 22a first pattern 22b second pattern 30 light emitting element 31 substrate 32 semiconductor layer 32a n type layer 32b light emitting layer 32c p type layer 33 n side terminal 34 p side Terminal 40 Protection element 50 Resin sealing part 60 Diffusion part 70 Fluorescence part 80 Reflection part B Bump S1 Light emission area S2 Non-light emission area L Virtual extension line ZD Zener diode

Claims (7)

  1. A flip-chip type light emitting element in which power is supplied by the first electrode and the second electrode, and a light emitting region corresponding to the first electrode emits light;
    Another element disposed adjacent to the light emitting element;
    A substrate on which the light emitting element and the other element are mounted as a mounting element;
    The other element is mounted on the substrate adjacent to a non-light-emitting region formed by forming the second electrode on the light-emitting element.
  2. The light emitting element is formed in a rectangular shape,
    The second electrode is formed at a corner,
    The light emitting device according to claim 1, wherein the other element is mounted on a virtual extension line of a diagonal line of the light emitting element.
  3. A fluorescent part containing a phosphor is formed in a wider range than the light emitting element,
    The light emitting device according to claim 1, wherein the fluorescent part includes a part or all of the other element.
  4. The light-emitting device according to claim 3, wherein the fluorescent part is a resin sealing part that seals the light-emitting element and the other elements.
  5. The light emitting device according to claim 3, wherein the fluorescent portion is formed by a sheet member that covers a top surface of the light emitting element and a part or all of the top surface of the other element.
  6. The light emitting device according to claim 5, wherein a reflection portion is formed around the light emitting element and the other element.
  7. The light emitting device according to any one of claims 1 to 6, wherein a diffusion part that scatters light from the light emitting element is formed in the fluorescent part.
JP2013079219A 2013-04-05 2013-04-05 Light-emitting device Pending JP2016115688A (en)

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JP2013079219A JP2016115688A (en) 2013-04-05 2013-04-05 Light-emitting device
PCT/JP2014/000784 WO2014162650A1 (en) 2013-04-05 2014-02-17 Light-emitting device

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JP6352551B2 (en) 2015-10-27 2018-07-04 創光科学株式会社 Nitride semiconductor ultraviolet light emitting device and method for manufacturing the same
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JP3673621B2 (en) * 1997-07-30 2005-07-20 ローム株式会社 Chip light emitting device
JP2002314138A (en) * 2001-04-09 2002-10-25 Toshiba Corp Light emitting device
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US8084780B2 (en) * 2009-08-13 2011-12-27 Semileds Optoelectronics Co. Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC)
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