JP2016111059A - Manufacturing method for on-substrate structure, and on-substrate structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method for an on-substrate structure and the on-substrate structure, capable of implementing accurate micro-fabrication at a low cost.SOLUTION: A manufacturing method for an on-substrate structure includes: a step of forming a photosensitive material layer on a substrate surface or a functional material layer surface; a step of generating interference light in which longer directions of interference fringes cross at a predetermined angle by crossing beams of light obtained by dividing output light of a coherent light source into two or more, to perform an interference exposure on the photosensitive material layer by a step-and-repeat method using the interference light; a step of removing an area irradiated with the interference light or a non-irradiated area of the photosensitive material layer after the interference exposure, to form a micro pattern on the photosensitive material layer; and a step of performing etching on the substrate or the functional material layer by using the micro pattern on the photosensitive material layer, to obtain a micro pattern.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a method for manufacturing an on-substrate structure having a fine pattern formed on the surface, and an on-substrate structure.

In various devices such as optical elements such as polarizing elements and anti-reflective elements, or semiconductor light-emitting elements such as fluorescent light sources and LEDs (Light Emitting Diodes), there is an increasing demand for processing fine structures. Technological development is underway to realize the processing of microstructures on the order of smaller than the wavelength (for example, 100 nm or less).
As means for producing such a sub-wavelength order fine pattern, for example, an exposure method using a stepper or electron beam drawing, or a lithography technique using X-rays having a wavelength shorter than ultraviolet light is known (for example, non-patent). Reference 1). However, these methods are not suitable for mass production and have not yet been applied to the mass production process of various devices as described above.

In general, electron beam lithography exposure and X-ray lithography are not suitable for mass production because throughput is low because the area that can be exposed at one time is limited. In particular, in the electron beam drawing exposure, since the workpiece is directly exposed by the electron beam itself, a processing accuracy of several nanometers can be realized, but even if exposure is performed to a dimension of several millimeters square, a huge processing time of several days is required. .
Although exposure by a stepper is a method suitable for mass production, an applicable workpiece needs to conform to the SEMI standard, and cannot be applied to a thick workpiece or a workpiece with a large warp. For example, in the SEMI standard, the thickness of an 8-inch Si substrate is 725 ± 20 μm, and the thickness variation index TTV (Total Thickness Variation) is 10 μm. On the other hand, the substrates of various devices as described above include those with a small diameter of about 1 to 2 inches and those with a large warp because a functional material is formed on the surface. Can not.

As described above, with the existing technology, it is difficult to process fine structures on various device substrates because of limitations on throughput and workpiece shape.
Therefore, recently, a method of processing a fine structure by a nanoimprint method (nanoimprint lithography: NIL) in which a workpiece such as resin or glass is sandwiched between a master mold (mold) and a substrate and a fine uneven pattern is transferred has been proposed. Yes.

“Applied Physics”, Japan Society of Applied Physics, 2004, Vol. 73, No. 4, p. 455-461

  NIL is actively researched and has the advantage that mass production of microfabrication can be easily realized by preparing a master mold. However, in practice, since this method requires contact between the workpiece and the master mold, there are various problems in application. Specifically, there are deterioration of the shape of the master mold, pattern formation failure due to air bubble mixing during filling of the photoresist, transfer failure due to particle contamination, and the like. In principle, it is difficult to apply to workpieces with large warpage. For these reasons, NIL has a low yield during mass production and is not suitable for high-precision patterning.

Furthermore, NIL has a problem in terms of cost. In NIL, every time the workpiece and the master mold come into contact with each other, the master mold deteriorates, and it is necessary to replace it periodically. The master mold has a fine shape formed on a large area with high accuracy, and litho patterning using a relatively expensive processing method such as electron beam processing or a KrF stepper is indispensable. Therefore, an increase in running cost becomes a problem during mass production. In addition, since a new master mold is required every time the design is changed, it is not suitable for development applications and production of a small variety of products.
Then, this invention makes it a subject to provide the manufacturing method of the structure on a board | substrate which can implement | achieve a highly accurate microfabrication at low cost, and a structure on a board | substrate.

  In order to solve the above-described problem, one embodiment of a method for manufacturing a structure on a substrate according to the present invention includes at least one of a plurality of convex portions and concave portions on a surface of a substrate or a functional material layer provided on the substrate. A method for producing a structure on a substrate having a fine pattern in which a photosensitive material layer is formed on the surface of the substrate or the surface of the functional material layer, and the output light of the coherent light source is two or more. Crossing the light branched into a predetermined interference angle to generate interference light in which the longitudinal direction of the interference fringes intersects at a predetermined angle, and using the interference light, performing the interference exposure of the photosensitive material layer And removing the interference light irradiation area or non-irradiation area in the photosensitive material layer after the interference exposure to form a fine pattern on the photosensitive material layer; and With turns, including the steps of obtaining a fine pattern by etching the substrate or the functional material layers. The step of performing the interference exposure is a step of exposing the photosensitive material layer by repeatedly irradiating the photosensitive material layer with the interference light and transporting the substrate, and the interference light is irradiated in one shot. When the photosensitive material layer is exposed while shaping the interference light irradiation area, which is an area on the photosensitive material layer, into a rectangular shape or a substantially rectangular shape, and transporting the substrate stepwise, The interference light irradiation regions are adjacent to each other on the photosensitive material layer without overlapping in the substrate transport direction.

  Thus, a fine pattern is formed by interference exposure. In the interference exposure, fine pattern exposure can be performed without using a fine photomask, and there is no element in contact with the workpiece. Therefore, the yield at the time of mass production can be increased as compared with the conventional nanoimprint method or the like. Further, since an expensive master mold is not required unlike the nanoimprint method, high-accuracy patterning can be performed at low cost. Therefore, as various devices such as optical elements and semiconductor light-emitting elements, structures on the substrate in which a two-dimensional periodic fine pattern is formed on the substrate surface or the surface of the functional material layer formed on the substrate can be manufactured easily and accurately. can do.

  Further, since the substrate is exposed step by step while the substrate is conveyed stepwise, it is possible to expose a large area without increasing the size of the apparatus. Therefore, it is possible to reduce the cost associated with increasing the size of the apparatus. In addition, since the exposure area is shaped into a rectangle in the two-beam interference exposure, the interference light irradiation areas of the respective shots can be arranged on the workpiece without overlapping each other. Therefore, the number of shots can be reduced as compared with the exposure method in which the interference light irradiation regions are overlapped, and the number of settling times of the stage that transports the substrate can be reduced. As a result, the exposure time for the entire workpiece can be shortened and the throughput can be improved.

The method for manufacturing a structure on a substrate may further include a step of performing a heat treatment on the fine pattern formed on the photosensitive material layer and shaping the fine pattern before performing the etching. .
Thus, since the fine pattern is shaped by the heat treatment step, the precision of the fine pattern after formation can be further improved. In addition, this heat treatment step can increase the width of the fine pattern and reduce the interval between the adjacent convex portions. That is, a denser structure can be formed.

Furthermore, in the method for manufacturing a structure on a substrate, the photosensitive material layer is made of a material having a glass transition point, and in the step of shaping the fine pattern, the heat treatment exceeds the glass transition temperature. You may perform the process which heats the fine pattern formed in the said photosensitive material layer with temperature.
As described above, by performing the heating at a temperature higher than the glass transition temperature, a fine pattern having an anisotropic shape (for example, an elliptical shape) can be naturally shaped into a perfect circular shape by surface tension. . In addition, this makes it possible to use a fine pattern formed on the photosensitive material layer as a mask and to have a perfect circular bottom when the substrate or the functional material layer provided on the substrate is removed by etching. A moth-eye structure can be formed.

In the method for manufacturing a structure on a substrate described above, in the step of performing the interference exposure, the interference exposure may be performed so that a fine pattern formed on the photosensitive material layer has a square arrangement. That is, if interference exposure is performed so that the longitudinal direction of the interference fringes intersects by 90 °, a square array of moth-eye structures can be obtained.
Furthermore, in the method for manufacturing a structure on a substrate described above, in the step of performing the interference exposure, the interference exposure may be performed so that a fine pattern formed on the photosensitive material layer has a three-way arrangement. That is, if interference exposure is performed so that the longitudinal direction of the interference fringes intersects by 60 °, a three-way moth-eye structure can be obtained. In this case, a fine structure can be obtained as compared with a square-shaped moth-eye structure.

  Further, in the method for manufacturing a structure on a substrate, the step of performing the interference exposure is a step of performing the interference exposure on the photosensitive material layer a plurality of times, and the interference fringes in the second and subsequent interference exposures. May be crossed at a predetermined angle with the longitudinal direction of the interference fringes in the first interference exposure. Thus, a desired fine pattern can be easily formed by performing interference exposure a plurality of times.

Furthermore, in the above-described method for manufacturing a structure on a substrate, in the step of performing the interference exposure, after performing the first interference exposure, the substrate is rotated by the predetermined angle to perform the second and subsequent interferences. Exposure may be performed. Thus, exposure can be easily realized a plurality of times by rotating the substrate.
In the method for manufacturing a structure on a substrate described above, in the step of performing the interference exposure, a light shielding member having a rectangular or substantially rectangular light transmitting portion is disposed on the photosensitive material layer. The interference light irradiation region may be shaped into a rectangular shape or a substantially rectangular shape. Thereby, the interference light irradiation region can be shaped relatively easily.

  Further, in the above-described method for manufacturing a structure on a substrate, in the step of performing the interference exposure, the light shielding member is disposed with a predetermined gap on the photosensitive material layer, whereby an end of the interference light irradiation region is provided. Forming a non-interference light irradiation region irradiated with non-interference light, which is a part of the light branched into two or more, and the exposure adjacent to the substrate transport direction when performing exposure while transporting the substrate stepwise. The non-interference light irradiation regions formed at the ends of the light irradiation regions may be overlapped.

  Thus, since the non-interference light irradiation areas are used for superposition, it is possible to prevent the interference light irradiation areas from being overlapped, that is, overexposure. In addition, the non-interference light irradiation area can be used as an index when arranging the interference light irradiation areas. Furthermore, since a gap is provided between the light shielding member and the photosensitive material layer, it is possible to prevent particles and the like from adhering to each other due to the close contact therebetween.

  Further, in the above-described method for manufacturing a substrate structure, in the step of performing the interference exposure, the light shielding member is arranged with a predetermined gap on the photosensitive material layer, whereby an end of the interference light irradiation region is arranged. Forming a non-interference light irradiation region irradiated with non-interference light, which is a part of the light branched into two or more, and exposing the interference light irradiation region to the substrate while transporting the substrate stepwise. You may superimpose on the said non-interference light irradiation area | region formed in the edge part of the said interference light irradiation area | region adjacent to a conveyance direction.

  Thus, since the non-interference light irradiation areas are used for superposition, it is possible to prevent the interference light irradiation areas from being overlapped, that is, overexposure. Also, since the non-interference light irradiation area and the interference light irradiation area adjacent to each other in the substrate transport direction are overlapped, the non-interference light irradiation area (dead zone) interposed between the interference light irradiation areas adjacent to each other in the substrate transfer direction is minimized. can do. Furthermore, since a gap is provided between the light shielding member and the photosensitive material layer, it is possible to prevent particles and the like from adhering to each other due to the close contact therebetween.

Furthermore, in the method for manufacturing a structure on a substrate, the light shielding member may be directly disposed on the photosensitive material layer in the step of performing the interference exposure.
Thus, by disposing the light shielding member directly on the photosensitive material layer, the non-interference light irradiation region is not formed on both sides of the interference light irradiation region in the substrate transport direction. Therefore, the area of the interference light irradiation region can be increased as compared with the case where the light shielding member is disposed on the photosensitive material layer with a gap. That is, the area that can be exposed by one shot can be widened, and the number of shots necessary for exposure of a certain area can be reduced accordingly.

  Further, one embodiment of the method for manufacturing a structure on a substrate according to the present invention is a fine structure in which at least one of a plurality of convex portions and concave portions is arranged on the surface of the substrate or the surface of the functional material layer provided on the substrate. A method for manufacturing a structure on a substrate having a pattern, wherein interference light in which longitudinal directions of interference fringes intersect at a predetermined angle by intersecting light beams obtained by branching output light of a coherent light source into two or more at a predetermined interference angle Generating a fine pattern by performing interference exposure on the substrate or the functional material layer using the interference light, removing a part of the substrate or the functional material layer, and performing the interference exposure. The performing step is a step of exposing the substrate or the functional material layer by repeatedly irradiating the substrate with the interference light and transporting the substrate, and before irradiating the interference light with one shot. When the interference light irradiation area, which is an area on the substrate or the functional material layer, is shaped into a rectangular shape or a substantially rectangular shape, each shot is exposed when the substrate or the functional material layer is exposed while stepping the substrate. The interfering light irradiation regions are adjacent to each other on the substrate or the functional material layer without overlapping in the substrate transport direction.

  As described above, since a fine pattern is formed by interference exposure, the yield during mass production can be increased and patterning with high accuracy can be achieved at low cost as compared with the conventional nanoimprint method or the like. Therefore, a light-emitting element for a fluorescent light source in which a fine pattern is formed on the surface of the fluorescent substrate or the surface of the functional material layer formed on the fluorescent substrate can be easily and accurately manufactured.

Further, since the substrate is exposed step by step while the substrate is conveyed stepwise, it is possible to expose a large area without increasing the size of the apparatus. Therefore, it is possible to reduce the cost associated with increasing the size of the apparatus. In addition, since the exposure area is shaped into a rectangle in the two-beam interference exposure, the interference light irradiation areas of the respective shots can be arranged on the workpiece without overlapping each other. Therefore, the number of shots can be reduced as compared with the exposure method in which the interference light irradiation regions are overlapped, and the number of settling times of the stage that transports the substrate can be reduced. As a result, the exposure time for the entire workpiece can be shortened and the throughput can be improved.
Furthermore, one aspect of the on-substrate structure according to the present invention is manufactured by any one of the manufacturing methods described above. Thereby, it can be set as the structure on a board | substrate which has a highly accurate fine pattern.

According to the present invention, since interference exposure is performed in the exposure step, it is possible to form a fine pattern made of a photosensitive material layer with high accuracy at low cost. Therefore, the on-substrate structure in which a highly accurate fine pattern is formed on the surface of the substrate or the surface of the functional material layer provided on the substrate can be manufactured at low cost.
In addition, since the so-called step-and-repeat method in which the substrate is exposed while being conveyed stepwise is adopted, the apparatus can be miniaturized and low cost can be realized. In the two-beam interference exposure, the exposure area (interference light irradiation area) of one shot is shaped into a rectangle, so that the exposure can be performed side by side in the substrate transport direction without overlapping the interference light irradiation areas of the shots. Therefore, the number of shots can be reduced as compared with the method of superimposing the interference light irradiation region, and as a result, the throughput can be improved.
In this way, the on-substrate structure can be manufactured with high throughput and low cost.

It is a schematic block diagram which shows the exposure apparatus of 1st Embodiment. It is a figure which shows a mode that an effective irradiation area | region is formed. It is a figure which shows distribution of the interference area | region and non-interference area | region in an effective irradiation area | region. It is an exposure shot layout image. It is a figure which shows the exposure method in 1st Embodiment. It is a figure which shows the exposure pattern of this embodiment. It is a figure which shows the exposure method in 1st Embodiment. It is a figure which shows exposure intensity distribution at the time of 90 degree orientation. It is a figure which shows the resist pattern shape at the time of 90 degree orientation. It is a figure which shows exposure intensity distribution at the time of 60 degree orientation. It is a figure which shows the resist pattern shape at the time of 60 degree orientation. It is a figure which shows the example of shaping of the resist pattern by heat processing. It is a figure which shows the example of shaping of the resist pattern by heat processing. It is sectional drawing which shows an example of the resist pattern before heat processing. It is sectional drawing which shows an example of the resist pattern before heat processing. It is sectional drawing which shows the example of shaping of the resist pattern by heat processing. It is a top view which shows the example of shaping of the resist pattern by heat processing. It is a top view which shows the example of shaping of the resist pattern by heat processing. It is a top view which shows the example of shaping of the resist pattern by heat processing. It is a figure which shows the manufacturing method of the structure on a board | substrate. It is a figure which shows the difference in the light extraction intensity | strength by the presence or absence of the heat processing to a fine pattern. It is a figure which shows another example of the exposure method in 1st Embodiment. It is a figure which shows another example of the exposure method in 1st Embodiment. It is a schematic block diagram which shows the exposure apparatus of 2nd Embodiment. It is a figure which shows an example of the mechanism of a variable angle mirror. It is the schematic of the multi-beam interference exposure method.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(First embodiment)
FIG. 1 is a schematic block diagram that shows the exposure apparatus of the present embodiment.
In the figure, reference numeral 1 denotes an exposure apparatus. The exposure apparatus 1 includes a light source 2, a beam expander 3, a down mirror 4, a shutter 5, a beam branching element 6, folding mirrors 7a and 7b, condenser lenses 8a and 8b, a pinhole 9a, 9b and collimating lenses 10a and 10b. The exposure apparatus 1 further includes a stage 11, a suction disk 12, a mask 13, a gap sensor 14, a controller 20, and a stage drive circuit 21.

The light source 2 is a coherent light source that emits coherent light, and is, for example, a semiconductor-excited solid laser that emits laser light having a wavelength λ of 266 nm. The laser beam B0 emitted from the light source 2 is expanded in beam diameter by the beam expander 3 and its optical path is deflected by the down mirror 4.
The shutter 5 is for switching ON / OFF of laser light emission, and is disposed between the mirror 4 and the beam branching element 6. The controller 20 controls the opening and closing of the shutter 5.

The beam splitter 6 splits one laser beam to generate two laser beams. The beam branching element 6 is a concavo-convex diffractive element that realizes its function using a shape effect due to a fine concavo-convex shape formed on the surface of quartz or the like, for example.
The two laser beams B1 and B2 generated by the beam branching element 6 are optically deflected by the folding mirrors 7a and 7b, respectively, and enter the condenser lenses 8a and 8b.

The laser beam condensed by the condensing lens 8a is incident on the pinhole 9a, the beam diameter is enlarged, and then collimated by the collimating lens 10a. In this way, a collimated laser beam B3 is obtained. Similarly, the laser light after being condensed by the condensing lens 8b is incident on the pinhole 9b, the beam diameter is enlarged, and then collimated by the collimating lens 10b. In this way, a collimated laser beam B4 is obtained.
Here, the pinholes 9a and 9b function as a spatial filter and are used to remove the disturbance of the beam wavefront generated in the optical path to the condenser lenses 8a and 8b. The collimating lenses 10a and 10b are used to make the wavefront of the laser light an ideal plane wave.
As shown in FIG. 2, the two laser beams B3 and B4 are crossed at a predetermined interference angle 2θ. As a result, interference fringes due to interference between the two laser beams B3 and B4 are generated above the workpiece (substrate) W, and this is irradiated onto the workpiece W as exposure light. That is, a striped line-and-space pattern is transferred onto the workpiece W by one exposure.

  In this way, the beam expander 3, the down mirror 4, the shutter 5, the beam branching element 6, the folding mirrors 7a and 7b, the condenser lenses 8a and 8b, the pinholes 9a and 9b, and the collimating lenses 10a and 10b are configured. Interference light is generated by intersecting light, which is obtained by branching the output light of the light source 2 into two, with an interference angle 2θ by the optical system element. Among these optical system elements, a set of elements between the beam branching element 6 and the workpiece W are provided as a pair, and the two laser beams branched by the beam branching element 6 are guided to the workpiece W, It is shaped and made to interfere on the workpiece W.

Returning to FIG. 1, the workpiece W is fixed on a suction disk 12 provided on the stage 11. Here, as the workpiece W, for example, a substrate on which a photosensitive material layer (for example, a photoresist) is formed can be used. As the workpiece W, a substrate in which a photosensitive material layer is formed on a substrate having a functional material layer on the surface can be used.
By exposing and developing such a workpiece W with interference light, it is possible to form a fine pattern in which a plurality of convex portions and / or concave portions are arranged in a photosensitive material layer (photoresist or the like). At this time, when the resist applied to the substrate is a positive type in which the light irradiated portion is dissolved in the developer, the resist where the light is not irradiated remains by exposing and developing using the above exposure method. A pattern can be obtained. On the other hand, when the resist is a negative type in which the light-irradiated part is crosslinked and does not dissolve in the developer, the light-irradiated portion remains after development by exposing and developing using the above exposure method. A resist pattern can be obtained.

  The stage 11 has a degree of freedom to move in the XY direction with respect to the workpiece W surface, and the controller 20 can move the stage 11 in the XY direction by controlling the drive of the stage drive circuit 21. It has become. That is, the workpiece W moves in the XY direction by moving the stage 11 in the XY direction. Here, the X direction is the left-right direction in FIG. 1, and the Y direction is the direction perpendicular to the plane of FIG.

In the present embodiment, in consideration of lens aberration, the workpiece W is exposed using only light extracted from the vicinity of the center of the collimating lenses 10a and 10b. Specifically, a mask 13 having a rectangular opening (light transmission part) is arranged on the upper surface of the workpiece W, and interference light formed only by the vicinity of the center of the light passing through the collimating lenses 10a and 10b via the mask 13. Is irradiated to the workpiece W as exposure light.
The mask 13 is composed of a light shielding member having a rectangular light transmission part. Here, as the mask 13, a mask in which a rectangular opening is formed in the approximate center of a metal substrate is used. In addition, as the mask 13, what formed the light shielding film which formed the rectangular-shaped light transmission part which the said transparent substrate exposes on transparent substrates, such as glass, can also be used. Here, as the light shielding film, for example, a film made of chromium is used. Moreover, the light transmission part should just be a shape (substantially rectangular shape) near a rectangle.

By arranging such a mask 13 on the workpiece W, when a two-beam is incident on the mask 13 at an interference angle 2θ, the area on the workpiece W irradiated with the interference light in one shot is shaped into a rectangle. can do. The area that is divided by the rectangular opening of the mask 13 and is irradiated with light on the workpiece W is hereinafter referred to as an effective irradiation area.
The rectangular opening of the mask 13 is formed smaller than the irradiation area on the workpiece W of the light that has passed through the collimating lenses 10a and 10b. The size of this rectangular opening is substantially the same size as the effective irradiation area, and is 20.5 mm × 13.8 mm, for example.

The optimal size of the rectangular opening of the mask varies depending on the exposure conditions. For example, wavelength λ = 266 nm, interference angle θ = 47.6 ° (interference pattern L & S pitch 180 nm), irradiation area (1 / e ² diameter of beam) φ82 mm, interference pattern contrast 70%, laser output 100 mW, resist photosensitivity A threshold is 5 mJ / cm ² , an 8-inch wafer is used as a workpiece, and 90% of the area is an exposure area. When the target line width is L = 60 ± 10 nm, the size of the rectangular opening of the mask is preferably in the range of 8 mm × 5 mm to 36 mm × 24 mm. In particular, when the target line width is L = 60 ± 5 nm and the tact is 10 min / sheet or less, it is more preferably in the range of 18 mm × 12 mm to 24 mm × 16 mm.
If the long side of the rectangular opening of the mask is A and the short side is B, the area of the effective irradiation area of one shot can be maximized when the relationship of A = B / cos θ is satisfied.
The beam diameter (1 / e ² ) of the laser beams B3 and B4 can be arbitrarily determined according to the magnification of the beam expander 3, the condensing lenses 8a and 8b, and the collimating lenses 10a and 10b. Therefore, the size of the mask 13 is appropriately changed according to the application including the size of the beam diameter.

Further, the mask 13 is arranged with a gap D with respect to the workpiece W as shown in FIG. As shown in FIG. 1, a gap sensor 14 is embedded in the stage 11 and the suction disk 12, and the distance between the suction disk 12 and the mask 13 can be measured by the gap sensor 14.
Further, the mask 13 is held by a holder whose distance from the suction disk 12 can be adjusted, and an arbitrary gap D is set according to the thickness of the work W fixed to the suction disk 12 prior to exposure to the work W. The distance between the suction disk 12 and the mask 13 is adjusted so as to be provided.

  By disposing the mask 13 with a gap D on the workpiece W, as shown in FIG. 2, the workpiece W is irradiated with the interference light beams of the laser beams B3 and B4 and the laser beams B3 and B4. An area where only one of the two is irradiated occurs. That is, the effective irradiation area is an interference light irradiation area E1 (hereinafter, simply referred to as “interference area”) where the interference light is irradiated, and a non-radiation area formed by geometric wrapping of light rays formed on both sides of the interference area E1 in the X direction. It consists of an interference light irradiation area E2 (hereinafter simply referred to as “non-interference area”). The width of the non-interference area E2 depends on the gap D and the interference angle θ, and is 2D · tan θ.

FIG. 3 is a plan view showing an effective irradiation area E0 on the workpiece W. FIG. Here, the horizontal direction in FIG. 3 is the X direction, and the vertical direction in FIG. 3 is the Y direction. As shown in FIG. 3, an interference region E1 is formed at the center of the effective irradiation region E0 in the X direction, and non-interference regions E2 are formed on both sides thereof. Interference fringes are formed in the interference region E1, and no interference fringes are formed in the non-interference region.
For example, when the wavelength λ of the light source 2 is 266 nm and the interference angle is 15 ° ≦ θ ≦ 60 °, a stripe-shaped interference fringe having a pitch between adjacent lines of 154 nm to 514 nm is formed in the interference region E1. The pitch of the interference fringes depends on the interference angle θ, the wavelength λ of the light source 2 and the refractive index n of the exposure environment, and is λ / (2n · sin θ). That is, if the interference fringe pitch is n = 1 (exposure in air), the interference fringe pitch can be shortened to nearly half the wavelength λ of the laser light from the light source 2.

In the present embodiment, the entire workpiece W is exposed by the step-and-repeat method. Here, the step-and-repeat method is a method in which the exposure area of the substrate is divided into a plurality of small sections, the substrate is transported and exposed repeatedly, and the divided small sections are sequentially exposed.
In the exposure process employing the step-and-repeat method, the controller 20 performs step driving of the stage 11 and opening / closing control of the shutter 5. That is, the controller 20 moves the stage 11 on which the workpiece W is mounted to a predetermined position, opens the shutter 5, performs step exposure, closes the shutter 5, ends step exposure, and moves the stage 11 by a certain distance. This operation is repeated until a preset exposure area is exposed. The controller 20 operates as a substrate transfer control unit.

  For example, as shown in FIG. 4, exposure is started from the upper right position of the workpiece W, and the workpiece W is first transported in the + X direction (right direction in FIG. 4), and the effective irradiation area E0 is relative to the workpiece W. The first row is exposed while moving it periodically. That is, the first row is exposed while sequentially moving the exposure area in the −X direction from the upper right position of the workpiece W. At this time, as shown in FIG. 5A, the interference area E1 in the effective irradiation area E0 in the m-th exposure and the interference area E1 in the effective irradiation area E0 in the (m-1) -th exposure are the workpieces. The non-interference area E2 in the effective irradiation area E0 in the m-th exposure and the non-interference area E2 in the effective irradiation area E0 in the (m−1) -th exposure are not superimposed on the W. The workpiece W is conveyed so as to overlap.

  In this way, exposure is performed by arranging in the substrate transport direction (X direction) without overlapping the interference area E1 shaped in a rectangular shape by the step-and-repeat method. At this time, the non-interference regions E2 formed in the interference region E1 are overlapped with each other in the X direction. That is, the non-interference area E2 is interposed between the interference areas E1 adjacent in the X direction. As shown in FIG. 5B, the illuminance distribution of the interference pattern, the non-interference area E2 is an area that becomes a dead zone, and if it is extremely large, it causes a reduction in product performance. Therefore, when the area of the non-interference area E2 is A and the area of the interference area E1 is B, the dead zone area ratio = [(A / B) × 100] (%) is a value that does not cause a problem in practice. The gap D and the interference angle θ are set according to the application.

  After the exposure of the first row of the workpieces W, the workpieces W are transported in the + X direction and the + Y direction (downward in FIG. 4) so that the effective irradiation area E0 is positioned at the left end of the second row. Then, the work W is transported in the −X direction (left direction in FIG. 4), and the second row is exposed while moving the effective irradiation region E0 relative to the work W. That is, the second row is exposed while sequentially moving the exposure area in the + X direction from the left end position. At this time, similarly to the exposure in the first row, the interference region E1 is not superimposed in the X direction. Also, the interference region E1 is not overlapped in the Y direction. A slight gap may be provided between the effective irradiation areas E0 (interference areas E1) adjacent in the Y direction.

The above operation is repeated from the upper end to the lower end of the workpiece W in the Y direction to expose the entire workpiece W. In this exposure method, the conveyance direction of the workpiece W in the n-th column exposure differs from the conveyance direction of the workpiece W in the (n−1) -th column exposure.
As described above, in the present embodiment, in the two-beam interference exposure, the interference region E1 is shaped into a rectangle, and the substrate (work W) placed on the stage 11 by the step-and-repeat method is conveyed by stage driving. Interference exposure over a large area is possible. Since the interference area E1 is rectangular, pattern exposure onto a large-area substrate can be easily performed as shown in FIG.

  6A and 6B are diagrams showing the exposure method of the present embodiment, where FIG. 6A shows the apparatus configuration, FIG. 6B shows the exposure pattern, and FIG. 6C shows the illuminance distribution. In this way, the mask 13 is provided on the workpiece W, and the pattern effective area (interference area E1) is shaped into a rectangle. Therefore, as shown in FIG. Pattern effective areas can be arranged in the substrate transport direction. Thereby, as shown in FIG.6 (c), substantially constant illumination intensity distribution can be obtained.

  In the present embodiment, the workpiece W is exposed multiple times. At that time, in the first exposure (outward path), the interference pattern is irradiated along the path indicated by the solid line arrow in FIG. 7A, and in the second exposure (return path), the path indicated by the broken line arrow in FIG. Irradiate the interference pattern with. In the forward path, as shown in FIG. 7B, for example, the entire workpiece W is irradiated with a stripe-like interference pattern extending in the Y direction. In the second exposure, the stripe-shaped interference pattern is rotated by a predetermined angle with respect to the first interference pattern (first interference pattern), and this is irradiated onto the workpiece W as the second interference pattern.

That is, when the second rotation angle (orientation angle) is 90 °, for example, as shown in FIG. 7C, a striped interference pattern extending in the X direction is applied to the entire work W as the second interference pattern. Will be irradiated. Thereby, the workpiece W is irradiated with a pattern in which the first interference pattern and the second interference pattern are superimposed.
Here, the orientation angle δ is not limited to 90 °, and can be arbitrarily set within a range of 0 ° <δ ≦ 90 °. By changing the orientation angle, the shape of the pattern irradiated onto the workpiece W can be changed.
When performing the second and subsequent exposures, the interference pattern may be rotated, or the stage 11 that holds the workpiece W may be rotated. The method of rotating the stage 11 is preferable because interference exposure can be easily realized a plurality of times.

FIG. 8 is a diagram showing the result of desktop calculation of the exposure intensity distribution when the orientation angle is 90 °. In FIG. 8, the upper part schematically shows the three-dimensional intensity distribution, and the lower part schematically shows the two-dimensional intensity distribution. Yes. In this way, when the longitudinal direction of the interference fringes intersects by 90 ° between the first exposure and the second exposure, the irradiation pattern becomes a lattice shape by a total of two exposures, and the shape (dot pattern) of the non-irradiated portion P1 Is substantially a perfect circle in the XY plan view.
Therefore, when the resist is positive, a resist pattern in which the cylinder remains after development can be obtained. In this case, as shown in FIG. 9, the cylindrical fine patterns (dots) P1 are arranged in a square arrangement.

FIG. 10 is a diagram showing the result of desktop calculation of the exposure intensity distribution when the orientation angle is 60 °. Similarly to FIG. 8, FIG. 10 schematically shows the three-dimensional intensity distribution in the upper part and the two-dimensional intensity distribution in the lower part. As described above, when the longitudinal direction of the interference fringes intersects by 60 ° between the first exposure and the second exposure, the shape (dot pattern) of the non-irradiated portion P1 is substantially elliptical in the XY plan view.
Therefore, when the resist is a positive type, a resist pattern in which elliptical columns remain after development can be obtained. In this case, as shown in FIG. 11, the elliptic columnar fine patterns (dots) P1 are arranged in a three-way array.
Thus, when the orientation angle is 60 °, the dot pitch is narrower than when the orientation angle is 90 °. That is, a resist pattern having an arbitrary in-plane density can be produced by changing the orientation angle.

In the present embodiment, the obtained resist pattern is subjected to a heat treatment to shape the pattern shape.
The present inventors have found that the pattern shape can be shaped into a perfect circle by applying heat treatment to the resist pattern obtained by the above exposure and development. Therefore, in this embodiment, the resist pattern is heated at a temperature higher than the glass transition temperature of the resist, and the resist pattern is shaped into a perfect circle.
FIG. 12 is a diagram showing a result of heat treatment performed on the resist pattern shown in FIG. 11 at a temperature lower than the glass transition temperature. Here, heat treatment was performed on a resist having a glass transition temperature of approximately 140 ° C. to 150 ° C. with a heating temperature of 150 ° C. and a heating time of 10 minutes. As shown in FIG. 11, in the heat treatment below the glass transition temperature, the pattern P2 after the heat treatment did not change from the pattern P1 before the heat treatment, and the shaping was not performed.

On the other hand, it was confirmed that when the heat treatment was performed on the resist pattern shown in FIG. 11 at a temperature exceeding the glass transition temperature, the resist pattern was shaped. The result is shown in FIG.
Here, heat treatment was performed on a resist having a glass transition temperature of approximately 140 ° C. to 150 ° C. with a heating temperature of 200 ° C. and a heating time of 10 minutes. Thus, in the heat treatment at a temperature exceeding the glass transition temperature, the resist pattern was shaped, and the pattern P2 after the heat treatment had a perfect circular shape. That is, the elliptical resist pattern can be shaped into a perfect circle by heat treatment, and a perfect circle shaped dot pattern can be obtained in a three-way array.
As described above, a resist pattern having an arbitrary in-plane density can be produced by setting the orientation angle to an arbitrary angle. Therefore, a resist pattern having a circular shape with an arbitrary in-plane density can be produced by performing exposure at an arbitrary orientation angle and heat treatment after development.

  Then, using the resist after heat treatment obtained in this way as a mask, the substrate located immediately below the resist or the functional material layer provided on the substrate is removed by etching, so that the substrate surface or the functional material layer is removed. A structure on a substrate having a moth-eye structure in which convex structures are two-dimensionally arranged on the surface of the substrate can be manufactured. As described above, since the resist pattern after the heat treatment is shaped into a perfect circle, it is possible to manufacture a highly accurate moth-eye structure having a perfect circle bottom.

Furthermore, in the above heat treatment, the heating conditions such as the heating temperature and the heating time may be adjusted to adjust the dot size of the resist pattern.
FIG. 14 is a cross-sectional view showing an example of a resist pattern before heat treatment. For example, when the orientation angle is 60 °, as shown in FIG. 15, the resist pattern has an elliptical shape in a three-way array on the XY plane. Thus, when the orientation angle is 60 °, the shape of the dot (fine structure) P1 before the heat treatment is an elliptic cylinder, and its cross-sectional shape is a substantially square shape as shown in FIG.
When the above heat treatment is performed from this state, the fine structure P1 is shaped into a hemispherical fine structure P2 whose width in the radial direction increases as it approaches the substrate from the apex, as shown in FIG. Here, the heating conditions for the heat treatment were a heating temperature of 185 ° C. and a heating time of 10 minutes. Since the shape of the fine structure P2 in the XY plane at this time is a perfect circle as shown in FIG. 17, the interval between adjacent fine structures is narrow, and the fine structure is smaller than the elliptical pattern shown in FIG. The body can be placed closely.

FIG. 18 is a cross-sectional view of the resist pattern after the heat treatment when the heating conditions for the heat treatment are adjusted, the heating temperature is 215 ° C., and the heating time is 10 minutes. The microstructure P2 after the heat treatment shown in FIG. 18 has a collapsed hemispherical shape that is lower in height than the microstructure P2 after the heat treatment shown in FIG. Further, as shown in FIG. 19, the shape of the fine structure P2 in the XY plane is a perfect circle having a larger radius than the fine structure P2 shown in FIG.
As described above, when the heating temperature is increased, the dot diameter is increased even if the heating time is the same, and the interval between the adjacent fine structures is narrowed. In other words, the distance between adjacent fine structures in the resist pattern can be narrowed to provide a closer arrangement.
Thus, by adjusting the heating conditions, the dot diameter after the heat treatment can be adjusted, and the in-plane density of the fine structure can be adjusted.
Although the case where the heating temperature is changed has been described here, the dot diameter after the heat treatment can be similarly adjusted by changing the heating time. The heating conditions for obtaining a desired dot diameter (in-plane density) can be appropriately set according to the resist material, the material of the substrate under the resist, and the like.

FIG. 20 is a diagram showing a flow of a manufacturing method of a structure on a substrate having a moth-eye structure.
First, as shown in FIG. 20A, a substrate 30 having a functional material layer 40 provided on the surface is prepared. Here, the substrate 30 is, for example, a quartz substrate (SiO ₂ ), and the functional material layer 40 is, for example, zirconia (ZrO ₂ ). The functional material layer 40 is formed on the substrate 30 by sputtering, for example. In addition, the material of the board | substrate 30 and the functional material layer 40 can be suitably set according to a use etc.

As the first step, as shown in FIG. 20B, a photosensitive material layer (for example, a photoresist) 50 is formed on the surface of the functional material layer 40, and as the second step, the above-described two-beam interference is performed. Exposure is performed a plurality of times to expose the photoresist 50.
Next, as a third step, the exposed photoresist 50 is developed. Thereby, for example, the irradiation area of the interference light in the photoresist 50 is removed, and the fine pattern 51 shown in FIG. 20C is formed. The fine pattern 51 has a dot pattern.
Next, as a fourth step, the fine pattern 51 of the photoresist 50 obtained in the third step is subjected to heat treatment (elliptic correction) to shape the fine pattern 51. At this time, for example, heat treatment is performed using a hot plate or the like. As a result, a fine pattern 52 having a hemispherical cross section shown in FIG.

Next, as a fifth step, the functional material layer 40 is etched using the fine pattern 52 obtained in the fourth step as a mask. Thereafter, the fine pattern 52 of the photoresist 50 is removed to obtain a fine pattern 41 shown in FIG.
Next, as a final step, sputtering is performed on the fine pattern 41 of the functional material layer 40 obtained in the fifth step to obtain the on-substrate structure having the moth-eye structure 42 shown in FIG.
In the example shown in FIG. 20, the case where the fine pattern is formed on the surface of the functional material layer 40 provided on the substrate 30 has been described. However, the fine pattern 52 of the photoresist 50 is formed on the surface of the substrate 30, If the substrate 30 is etched using the fine pattern 52 as a mask, a moth-eye structure can be formed on the surface of the substrate 30.
The on-substrate structure manufactured as described above can be used as various devices such as an optical element such as a polarizing element and an antireflection element, or a semiconductor light emitting element typified by a fluorescent light source and an LED.

As described above, in this embodiment, the interference exposure of the photoresist is performed using the interference light generated by intersecting the light branched from the output light of the coherent light source at a predetermined interference angle. At this time, two-beam interference exposure is performed a plurality of times so that the longitudinal direction of the interference fringes irradiated in the second and subsequent interference exposures intersects with the longitudinal direction of the interference fringes irradiated in the first interference exposure at a predetermined orientation angle. To. Then, after the exposure, a development process is performed to obtain a fine resist pattern.
In the two-beam interference exposure, fine pattern exposure can be performed without using a fine photomask, and there is no element in contact with the workpiece. Therefore, the yield can be increased as compared with a method such as NIL (nanoimprint lithography) that requires contact between the workpiece and the master mold each time.

In addition, since the two-beam interference exposure can be performed at a very deep depth of focus, the flatness of the workpiece is not an issue. For example, in the nanoimprint method, if a workpiece is warped, the workpiece may be damaged or a transfer failure may occur. Therefore, by adopting the two-beam interference exposure, it is possible to expose with high accuracy even if the workpiece is warped.
In the nanoimprint method, the master mold is deteriorated due to contact between the workpiece and the master mold every time. Therefore, the master mold needs to be managed. However, in the two-beam interference exposure, the management as described above is not required. Quality stability can be ensured. Furthermore, the two-beam interference exposure does not require an expensive master mold that is a consumable like the nanoimprint method, so that the cost can be reduced accordingly.

Moreover, if the fine pattern obtained by performing the development process is subjected to heat treatment to shape the fine pattern, the accuracy of the resist pattern can be further improved. At this time, by performing a heat treatment at a temperature higher than the glass transition temperature as the heat treatment, an anisotropic fine pattern can be naturally shaped into an isotropic fine pattern by surface tension.
Therefore, by performing etching using the above-described photoresist, a fine structure having a controlled shape can be manufactured in which fine convex portions and / or concave portions are arranged two-dimensionally and periodically. As described above, in particular, when the resist pattern is a dot pattern, a fine structure having a highly accurate moth-eye structure can be manufactured.

  FIG. 21 is a diagram showing the light distribution characteristics of a light-emitting element having a moth-eye structure on the surface, and shows that a difference occurs in the characteristics due to the difference in the shape of the moth-eye. In FIG. 21, the solid line shows the light distribution characteristics of a moth-eye structure with a three-way arrangement and a perfect circle (with heat treatment), and the broken line shows the light distribution characteristic with a moth-eye structure with a three-way arrangement and an ellipse (without heat treatment). Thus, it can be confirmed that the light intensity in the vicinity of θ = 0 ° of the light emitting element is increased by performing heat treatment to shape the ellipse into a perfect circle.

In the present embodiment, in the interference exposure process, the alignment of the resist pattern can be changed by adjusting the orientation angle. Furthermore, in the above heat treatment step, the shape of the resist pattern can be changed by adjusting the heating conditions. Therefore, a moth-eye structure having an arbitrary arrangement and an arbitrary in-plane density can be produced.
Note that the material of the substrate on which the fine structure is formed can be appropriately selected depending on the application. For example, the structure having a moth-eye structure manufactured according to this embodiment can be used as a master mold used in the nanoimprint method.

Furthermore, in this embodiment, since the step-and-repeat method is adopted in the two-beam interference exposure, it is possible to expose a large area without increasing the size of the apparatus. Therefore, it is possible to reduce the cost associated with increasing the size of the apparatus.
In addition, since the interference area irradiated with the interference light in the two-beam interference exposure is shaped into a rectangle, the step-and-repeat exposure can be performed without superimposing the interference area in the substrate transport direction. Therefore, the number of shots on the substrate can be reduced as compared with the method of overlapping the interference region, and the throughput can be improved. As described above, it is possible to realize fine processing on the workpiece W with high throughput and low cost.

Furthermore, since the non-interference area is formed on both sides of the interference area in the substrate transport direction, and the non-interference area is used for superposition during the substrate transport, it is possible to prevent overexposure due to the overlap of the interference areas. . In addition, since the non-interference area can be used as an index when the interference areas are arranged side by side on the substrate, the substrate can be easily and appropriately exposed.
In addition, since the mask 13 which is a light shielding member having a rectangular light transmission part is disposed on the substrate, the interference region can be shaped into a rectangle relatively easily. Further, at this time, since the gap D is provided between the substrate and the mask 13, adhesion of particles or the like due to the close contact between the two can be prevented.

In the above embodiment, when the effective irradiation areas E0 are arranged in the plate conveyance direction, the interference areas E1 are not overlapped but the non-interference areas E2 are overlapped. However, the non-interference areas E2 are adjacent to each other. You may make it overlap on the interference area | region E1.
That is, as shown in FIG. 22A, the interference area E1 in the effective irradiation area E0 in the m-th exposure is overlapped with the interference area E1 in the effective irradiation area E0 in the (m-1) -th exposure. In addition, the interference area E1 in the effective irradiation area E0 in the m-th exposure, the non-interference area E2 in the effective irradiation area E0 in the (m−1) -th exposure, and the effective irradiation area E0 in the m-th exposure. The workpiece W is transported so that the non-interference area E2 and the interference area E1 in the effective irradiation area E0 in the (m−1) th exposure overlap.

In this case, as shown in the illuminance distribution of the interference pattern in FIG. 22B, there is a pattern in the region E3 where the interference region E1 and the non-interference region E2 overlap depending on the resist exposure threshold and the illuminance distribution conditions. It is formed.
Thereby, compared with the exposure method shown in FIG. 5, a dead thorn can be made small and product performance can be ensured. In this case as well, a non-interference area E2 may be interposed between the interference areas E1 adjacent in the substrate transport direction. Since the non-interference area E2 becomes a dead zone, it is desirable to make the non-interference area E2 as small as possible in applications where the presence of dead thorn is regarded as a problem.

In the above-described embodiment, the case where the mask 13 is arranged with the gap D provided on the workpiece W has been described. However, the mask 13 may be arranged directly on the workpiece W without providing the gap D.
That is, exposure is performed with the mask 13 in contact with the workpiece W. In this case, since the wraparound of the light beam as described with reference to FIG. 2 is not performed, the non-interference area E2 is not formed at both edges of the interference area E1. Therefore, the effective irradiation area E0 and the interference area E1 have the same area.

When exposure is performed by the step-and-repeat method, as shown in FIG. 23, adjacent interference areas E1 (= effective irradiation areas E0) are prevented from being superimposed in the substrate transport direction. At this time, a slight gap may be provided between the adjacent interference regions E1. Since this gap becomes a dead thorn, it is desirable to make this gap as small as possible in applications where the presence of dead thorn is regarded as a problem.
Thereby, compared with the exposure method shown in FIG.5 and FIG.22, the exposure effective area can be enlarged only by the non-interference area | region E2. Therefore, the number of shots can be reduced accordingly, and the throughput can be improved.

(Second Embodiment)
Next, a second embodiment of the present invention will be described.
In the second embodiment, the folding mirrors 7a and 7b are fixed mirrors in the first embodiment described above, but are variable angle mirrors.
FIG. 24 is a schematic block diagram that shows the exposure apparatus of the second embodiment.
The exposure apparatus 1 has the same configuration as the exposure apparatus 1 shown in FIG. 1 except that the folding mirrors 7a and 7b are variable angle mirrors 17a and 17b in the exposure apparatus 1 of FIG. Therefore, here, the same reference numerals are given to the parts having the same configuration as in FIG.

The variable angle mirrors 17a and 17b are configured to be able to change the angle of the light incident surface, and change the interference angle θ to a desired angle by changing the angle of the light incident surface. By changing the interference angle θ, the pitch of the stripe-like interference pattern formed on the substrate can be freely changed.
FIG. 25 is a diagram showing the mechanism of the variable angle mirrors 17a and 17b. Since the variable angle mirrors 17a and 17b have the same configuration, only the mechanism of the variable angle mirror 17a is shown here.

  The variable angle mirror 17a (hereinafter simply referred to as “mirror”) is an element for adjusting the interference angle θ to an arbitrary angle, and moves on a straight line formed by the beam (branched beam) B1 branched by the beam branching element 6. In addition, the angle can be changed around the vertical axis of the paper. The beam (mirror reflected beam) B5 reflected by the mirror 17a is directed to a predetermined position on the workpiece W, and is combined with the mirror reflected beam from the other mirror on the workpiece W to form interference fringes. That is, the normal line of the mirror 17a is a bisector of the angle formed by the branched beam B1 and the mirror reflected beam B5.

  As a method for adjusting the interference angle θ while keeping the normal line of the mirror 17a in a predetermined direction, for example, a method using a link mechanism having a T-shaped frame T as shown in FIGS. 25 (a) and 25 (b). There is. The T-shaped frame T is provided with three sliders S, two of which move on the straight lines formed by the branched beam B1 and the mirror reflected beam B5, and the other one is provided with a mirror 17a. Move on frame T.

Further, the rotation axis of the mirror 17a is constrained at the intersection of the branch beam B1 and the mirror reflected beam B5. When adjusting the interference angle θ, as shown in FIGS. 25 (a) to 25 (b), the normal direction of the mirror 17a is a bisector of an angle formed by the branched beam B1 and the mirror reflected beam B5. While maintaining the above, it changes in a predetermined direction.
The interference angle θ is adjusted by using a drive unit (actuator) 22. The drive unit 22 acts on the frame arranged on the straight line formed by the mirror reflected beam B5, and adjusts the interference angle θ. The drive unit 22 may be configured to adjust the interference angle θ by acting on the T-shaped frame T.

  As described above, the exposure apparatus according to the present embodiment has the variable angle mirror 17a that deflects each branched light toward the substrate so that the light branched into two or more by the beam branching element 6 intersects at a desired angle. 17b is provided, the pitch of the stripe-shaped interference pattern formed on the substrate can be freely changed. That is, the pitch (in-plane density) of the resist pattern obtained by multiple exposures can be freely changed.

(Modification)
In the above-described embodiment, two-beam interference exposure has been described. However, so-called multi-beam interference exposure may be employed in which a beam is split into two or more and irradiated onto the substrate at one time. As the beam branching means, for example, a diffractive optical element that splits a laser into a plurality of beams may be used. In multibeam interference exposure, for example, in order to obtain the same result as the method of overlapping the interference pattern of two beams by rotating 90 °, as shown in FIG. The optical components may be arranged so that the four planes formed by the normal lines of the substrate are oriented 90 ° at a time, and the angle formed by the two branched beams facing each other when entering the substrate is a predetermined interference angle.

  In the above embodiment, the case where the resist pattern is a dot pattern has been described. However, the present invention is not limited to this. For example, when the resist is a negative type, the portion irradiated with light in a lattice shape remains after development, and a pattern having a hole-like recess can be formed. Then, by applying the above-described heat treatment to the developed resist pattern, the resist pattern can be shaped into a recess having no anisotropy.

  DESCRIPTION OF SYMBOLS 1 ... Exposure apparatus, 2 ... Light source, 3 ... Beam expander, 4 ... Downward mirror, 5 ... Shutter, 6 ... Beam branching element, 7a, 7b ... Folding mirror, 8a, 8b ... Condensing lens, 9a, 9b ... Pinhole, 10a, 10b ... collimating lens, 11 ... stage, 12 ... suction disk, 20 ... controller, 21 ... stage drive circuit, 30 ... substrate, 40 ... functional material layer, 41 ... fine pattern, 42 ... moth eye structure, 50 ... Photoresist, 51 ... Fine pattern (before heat treatment), 52 ... Fine pattern (after heat treatment), W ... Work (substrate)

Claims (13)

A method for producing a structure on a substrate having a fine pattern in which at least one of a plurality of convex portions and concave portions is arranged on the surface of a substrate or the surface of a functional material layer provided on the substrate,
Forming a photosensitive material layer on the surface of the substrate or the surface of the functional material layer;
Interfering light beams obtained by branching the output light of the coherent light source into two or more at a predetermined interference angle to generate interference light in which the longitudinal direction of the interference fringes intersects at a predetermined angle, and using the interference light, the photosensitive property Performing interference exposure of the material layer;
Removing the interference light irradiation area or non-irradiation area in the photosensitive material layer after the interference exposure, and forming a fine pattern on the photosensitive material layer;
Using the fine pattern of the photosensitive material layer to etch the substrate or the functional material layer to obtain a fine pattern,
Performing the interference exposure,
Exposing the photosensitive material layer by repeatedly irradiating the substrate with the interference light and transporting the substrate,
Shaping the interference light irradiation region, which is a region on the photosensitive material layer irradiated with the interference light in one shot, into a rectangular shape or a substantially rectangular shape,
When exposing the photosensitive material layer while stepwise transporting the substrate, the interference light irradiation regions in each shot are adjacent to each other without overlapping in the substrate transport direction on the photosensitive material layer. A method for manufacturing a structure on a substrate, which is characterized.   2. The on-substrate structure according to claim 1, further comprising a step of performing a heat treatment on the fine pattern formed on the photosensitive material layer to shape the fine pattern before the etching. Manufacturing method. The photosensitive material layer is made of a material having a glass transition point,
3. The substrate according to claim 2, wherein in the step of shaping the fine pattern, the heat treatment is performed by heating the fine pattern formed on the photosensitive material layer at a temperature higher than a glass transition temperature. Manufacturing method of structure. In the step of performing the interference exposure,
The method for manufacturing a structure on a substrate according to any one of claims 1 to 3, wherein the interference exposure is performed so that the fine pattern formed on the photosensitive material layer has a square arrangement. In the step of performing the interference exposure,
The method for manufacturing a structure on a substrate according to any one of claims 1 to 3, wherein the interference exposure is performed so that the fine pattern formed on the photosensitive material layer has a three-way arrangement. The step of performing the interference exposure is a step of performing a plurality of times of interference exposure on the photosensitive material layer,
The longitudinal direction of the interference fringes in the second and subsequent interference exposures intersects with the longitudinal direction of the interference fringes in the first interference exposure at a predetermined angle. Method for manufacturing a structure on a substrate. In the step of performing the interference exposure,
The method for manufacturing an on-substrate structure according to claim 6, wherein after the first interference exposure, the substrate is rotated by the predetermined angle to perform the second and subsequent interference exposures. In the step of performing the interference exposure,
The interference light irradiation region is shaped into a rectangular shape or a substantially rectangular shape by disposing a light shielding member having a rectangular or substantially rectangular light transmitting portion on the photosensitive material layer. The manufacturing method of the structure on a board | substrate of any one of 1-7. In the step of performing the interference exposure,
By disposing the light shielding member on the photosensitive material layer with a predetermined gap, a non-interference light that is a part of the light branched into two or more is irradiated to the end of the interference light irradiation region. Forming an interference light irradiation area,
The non-interference light irradiation regions formed at the end portions of the interference light irradiation regions adjacent to each other in the substrate transfer direction are overlapped when the substrate is exposed while being transferred stepwise. Method for manufacturing a structure on a substrate. In the step of performing the interference exposure,
By disposing the light shielding member on the photosensitive material layer with a predetermined gap, a non-interference light that is a part of the light branched into two or more is irradiated to the end of the interference light irradiation region. Forming an interference light irradiation area,
When the substrate is exposed while being conveyed stepwise, the interference light irradiation region is superimposed on the non-interference light irradiation region formed at an end of the interference light irradiation region adjacent to the substrate conveyance direction. The manufacturing method of the structure on a board | substrate of Claim 8. In the step of performing the interference exposure,
9. The method for manufacturing an on-substrate structure according to claim 8, wherein the light shielding member is directly disposed on the photosensitive material layer. A method for producing a structure on a substrate having a fine pattern in which at least one of a plurality of convex portions and concave portions is arranged on the surface of a substrate or the surface of a functional material layer provided on the substrate,
Interfering the output light of the coherent light source into two or more at a predetermined interference angle to generate interference light in which the longitudinal directions of the interference fringes intersect at a predetermined angle, and using the interference light, the substrate or Interference exposure of the functional material layer, and removing the substrate or a part of the functional material layer to obtain the fine pattern,
Performing the interference exposure,
Exposing the substrate or the functional material layer by repeatedly irradiating the substrate with the interference light and transporting the substrate;
Shaping the interference light irradiation region, which is the region on the substrate or the functional material layer irradiated with the interference light in one shot, into a rectangular shape or a substantially rectangular shape,
When exposing the substrate or the functional material layer while transporting the substrate stepwise, the interference light irradiation regions in each shot are not superimposed on the substrate or the functional material layer in the substrate transport direction. A manufacturing method of a structure on a substrate, which is adjacent to each other. A structure on a substrate manufactured by the manufacturing method according to claim 1.

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