JP2015173271A - Pattern formation device, pattern formation method and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a patter formation device, a pattern formation method and a semiconductor device manufacturing method, which can perform pattern formation in view of displacement of a template uneven pattern.SOLUTION: A pattern formation device 200 comprises: a light irradiation part 210 which can irradiate light having an intensity distribution in an irradiation surface parallel with a principal surface and includes a division part for dividing the light into a plurality of regions in the irradiation surface and an adjustment part for adjusting an intensity of the light with respect to each of the plurality of regions; an input part 230 for inputting data D relevant to a relationship among a quantity and a direction of displacement with respect to the standard of an uneven pattern and a temporal change of the intensity distribution; and a control part 220 for controlling the light irradiation part 210 by the data D to change the intensity distribution depending on time so as to even out an irradiance level of the light in the irradiation surface in a predetermined amount of time.

Description

FIELD Embodiments described herein relate generally to a pattern forming apparatus, a pattern forming method, and a semiconductor device manufacturing method.

In the pattern formation method, attention has been paid to imprints using an original plate (template) provided with a concavo-convex shape of a pattern to be formed. In imprinting, for example, a photocurable organic material is applied on a substrate, a template is brought into contact with the layer of the organic material, and cured by light irradiation. As a result, a pattern in which the uneven shape of the template is transferred to the organic material layer is formed.
In the method of forming a pattern using a template, it is important to form a pattern in consideration of the positional deviation of the uneven pattern of the template.

JP 2010-245094 A

Embodiments of the present invention provide a pattern forming apparatus, a pattern forming method, and a semiconductor device manufacturing method capable of forming a pattern in consideration of a positional deviation of a concavo-convex pattern of a template.

The pattern forming apparatus according to the embodiment is a light irradiation unit capable of irradiating light having an intensity distribution in an irradiation surface parallel to the main surface, and divides the light into a plurality of regions in the irradiation surface. A light irradiation unit including a division unit, an adjustment unit that adjusts the intensity of the light for each of the plurality of regions, an amount and direction of deviation with respect to a reference of the uneven pattern, and a change of the intensity distribution with respect to time. An input unit that inputs data relating to the relationship, and the light irradiation unit is controlled according to the data, and the intensity distribution is adjusted according to time so that the total irradiation amount of the light becomes uniform in the irradiation surface in a certain time. And a control unit for changing.

1 is a schematic view illustrating a pattern forming apparatus according to a first embodiment. It is a schematic diagram which illustrates the structure of a light irradiation part. (A) And (b) is the schematic diagram illustrated about the area | region division of an irradiation surface. It is a figure which illustrates the change by the time of intensity distribution of light. (A)-(c) is a schematic diagram which illustrates the change of the intensity distribution of the light of an irradiation area | region. (A) And (b) is a schematic top view which illustrates about the position shift of the pattern in an irradiation area | region. It is a figure which illustrates the relationship between the intensity | strength of light, and the stress at the time of hardening of a pattern. It is a schematic diagram which shows the other structural example of a light irradiation part. It is a flowchart which illustrates the pattern formation method which concerns on 2nd Embodiment. (A)-(c) is typical sectional drawing which shows the specific example of a pattern formation method.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Further, in the present specification and each drawing, the same reference numerals are given to the same elements as those described above with reference to the previous drawings, and detailed description thereof will be omitted as appropriate.

(First embodiment)
FIG. 1 is a schematic view illustrating a pattern forming apparatus according to the first embodiment.
As shown in FIG. 1, the pattern forming apparatus 200 according to the first embodiment is an apparatus that forms a pattern on the transfer object 70 using the template 110 provided with the uneven pattern 21. That is, the pattern forming apparatus 200 irradiates the transferred object 70 with light C in a state where the uneven pattern 21 of the template 110 is imprinted on the transferred object 70, and cures the transferred object 70 to change the shape of the uneven pattern 21. Transfer to the transfer object 70.

Here, the template 110 has the base material 10 and the uneven | corrugated pattern 21 provided on the main surface 10a of the base material 10. FIG. The template 110 is formed using, for example, a master serving as an original plate. For example, quartz is used for the substrate 10. For example, a photocurable organic material is used for the uneven pattern 21. When forming the template 110 from the master,
A photocurable organic material is applied on the base material 10, and the concave / convex pattern of the master is transferred to the photocurable organic material. The uneven pattern 21 is formed by curing the photocurable organic material.

The pattern forming apparatus 200 includes a light irradiation unit 210 and a control unit 220.
The light irradiation unit 210 irradiates light C having an intensity distribution in an irradiation surface R parallel to the main surface 10a of the substrate 10 of the template 110. Here, the irradiation surface R means a surface parallel to the main surface 10a in the region irradiated with the light C of the transferred object 70. The intensity of light refers to the energy density of light. The light irradiation unit 210 includes a mechanism that can change the intensity distribution of the light C within the irradiation surface R.
The control unit 220 controls the light irradiation unit 210 to change the intensity distribution of the light C in the irradiation surface R according to time.

In the pattern forming apparatus 200 according to this embodiment, by changing the intensity distribution of the light C in the irradiation surface R according to time, the distortion generated by the curing of the transfer object 70 by the light C is controlled. That is, when the intensity distribution of the light C in the irradiation surface R is changed according to time, the transferred object 7
The balance in the irradiation surface R of the shrinkage distortion generated by curing with 0 light C is adjusted. Thereby, the position in the irradiation surface R of the pattern formed when the to-be-transferred object 70 hardens | cures is adjusted. Therefore, even when the uneven pattern 21 of the template 110 has a positional deviation with respect to the reference, the positional deviation is suppressed from being reflected in the pattern formed on the transferred object 70.

The pattern forming apparatus 200 may be provided with an input unit 230. The input unit 230 is a part for inputting data D indicating a change according to the time of the intensity distribution of the light C in the irradiation surface R. The input unit 230 includes various input devices such as a keyboard and a pointing device, an input interface of a nonvolatile memory, and an interface with a network. That is, the data D is input by an input device, input from a nonvolatile memory, or input from an external device (computer, database, etc.) via a network.

Here, the data D includes information representing the relationship between the deviation amount and direction of the uneven pattern 21 of the template 110 with respect to the reference and the change with time of the intensity distribution of the light C in the irradiation surface R. The reference of the concavo-convex pattern 21 includes the design value of the concavo-convex pattern 21 and the position of the base pattern.

The pattern forming apparatus 200 includes a holding unit 240 that holds the template 110, and the substrate 60.
And a stage 250 on which is mounted. The holding part 240 is the base material 1 of the template 110.
For example, the opposite side of the zero uneven pattern 21 is sucked and held.
The stage 250 fixes the substrate 60 at a predetermined position. A transfer object 70 is provided on the substrate 60.

The controller 220 controls the distance between the holding unit 240 and the stage 250. That is,
At least one of the holding unit 240 and the stage 250 is provided with a moving mechanism (not shown). The control unit 220 controls the moving mechanism to hold the holding unit 240, the stage 250,
Control the interval. As a result, the transferred object 70 of the uneven pattern 21 of the template 110 is obtained.
And the template 110 is released from the transfer target 70.

FIG. 2 is a schematic view illustrating the configuration of the light irradiation unit.
FIG. 2 illustrates the light irradiation unit 210, the holding unit 24, and the stage 250 in the configuration of the pattern forming apparatus 200.

The light irradiation unit 210 includes a dividing unit 211 and an adjusting unit 215.
The dividing unit 211 divides the irradiation region of the light C into a plurality of regions in the irradiation surface R parallel to the main surface 10a. For the dividing unit 211, for example, a plurality of optical fibers are used. In this case, the dividing unit 211 divides the light emitted from the light source 217 by a plurality of optical fibers and irradiates each of the plurality of regions in the irradiation surface R. For example, a high-pressure mercury lamp is used as the light source 217. The light emitted from the light source 217 is, for example, ultraviolet light having a wavelength of about 310 nanometers (nm).

A plurality of reflecting mirrors may be used for the dividing unit 211. In this case, the light emitted from the light source 217 is irradiated to each of a plurality of regions in the irradiation surface R by a plurality of reflecting mirrors.

The adjusting unit 215 adjusts the intensity of the light C for each of the plurality of regions divided by the dividing unit 211 according to the intensity distribution. For example, a liquid crystal element is used for the adjustment unit 215. When an optical fiber is used as the dividing unit 211, a liquid crystal element is provided for each of the plurality of optical fibers.
The adjustment unit 215 adjusts the light transmittance of each liquid crystal element. Thereby, the intensity | strength of the light C irradiated for every some area | region in the irradiation surface R from each optical fiber is adjusted. The adjustment unit 215 adjusts the intensity of the light C for each of a plurality of regions in the irradiation surface R according to the intensity distribution in accordance with an instruction from the control unit 220.

Specific configurations of the dividing unit 211 and the adjusting unit 215 may be other than the above. For example,
As the dividing unit 211, a plurality of independent light sources 217 may be used for each of a plurality of regions. In this case, the adjusting unit 215 adjusts the light intensity of the light C emitted from each of the plurality of regions in the irradiation surface R by adjusting the light amounts of the plurality of independent light sources 217.

FIGS. 3A and 3B are schematic views illustrating the region division of the irradiation surface.
3A is a schematic plan view illustrating the irradiation surface R, and FIG. 3B is a schematic plan view illustrating the intensity distribution of the light C in the irradiation surface R.

As shown in FIG. 3A, the light C irradiated on the irradiation surface R is divided into a plurality of regions r <b> 1, r <b> 2,. In the example shown in FIG. 3A, the surface of the irradiation surface R is divided into a plurality of regions in the vertical and horizontal directions, but may be divided in either the vertical or horizontal direction, for example.
The adjustment unit 215 illustrated in FIG. 2 includes a plurality of regions r1, r2,..., Rn− illustrated in FIG.
The intensity of light C irradiation is adjusted for each of 1 and rn.

In this way, the light irradiation unit 210 causes a plurality of regions r1, r2,.
When the intensity of the light C is adjusted for rn, the intensity distribution of the light C can be set in the irradiation surface R, for example, as shown in FIG. In FIG. 3B, the darker the dot, the light C
This means that the strength of is high.

In the example of the intensity distribution shown in FIG. 3B, for example, when the irradiation surface R is divided into a left region RL and a right region RR, the light C in the region A1 that is a portion of the left region RL. Is high, and the intensity of the light C in the region B1 which is the portion of the right region RR is low. Further, the intensity of the light C decreases in the order of the peripheral area A2 and the area A3 with the area A1 as the center, and the intensity of the light C increases in the order of the peripheral area B2 and the area B3 with the area B1 as the center. .

The light irradiation unit 210 converts the intensity of the light C within the irradiation surface R into a plurality of regions r1, r2,.
Adjustment is made for each of rn−1 and rn, and for example, an intensity distribution as shown in FIG. Further, the light irradiation unit 210 changes the intensity distribution according to time in accordance with an instruction from the control unit 220.

FIG. 4 is a diagram illustrating the change of the light intensity distribution with time.
In FIG. 4, the horizontal axis indicates time, and the vertical axis indicates light intensity. FIG. 4 shows changes in light intensity in the area A1 and the area B1 shown in FIG.
In the example shown in FIG. 4, the light intensity in the region A1 increases rapidly from the time ts of the irradiation start of the light C to the time t1, and gradually decreases from the time t1 to the times t2 and t3. On the other hand, the light intensity in the region B1 gradually increases from the time ts at the start of irradiation of the light C to the times t1, t2, and t3, and rapidly decreases from the time t3 to the time te at the end of irradiation.

In FIG. 4, the change in the light intensity of the region A1 and the region B1 is shown, but the light intensity of each region of the irradiation surface R is changed according to time.

When the intensity distribution of the light C is changed according to time, the amount of shrinkage that occurs when the transfer target 70 is cured changes. For example, when the light intensity is increased in a short time from the irradiation start time ts like the light intensity in the region A1, the transfer target 70 is rapidly cured from the soft state. For this reason, the amount of shrinkage accompanying the curing of the transfer object 70 increases. On the other hand, when the light intensity is slowly increased from the irradiation start time ts like the light intensity in the region B1, the transfer target 70 is gradually cured from the soft state. For this reason, the amount of shrinkage accompanying the curing of the transfer object 70 is reduced.

As described above, the intensity distribution of the light C is provided in the irradiation surface R, and the amount of contraction on the irradiation surface R of the transfer object 70 is adjusted by changing the intensity distribution according to time. Thereby, the position after the curing of the pattern transferred to the transfer object 70 is adjusted.

FIG. 5A to FIG. 5C are schematic views illustrating changes in the light intensity distribution on the irradiated surface.
5A shows the intensity distribution at time t1 shown in FIG. 4, FIG. 5B shows the intensity distribution at time t2 shown in FIG. 4, and FIG. 5C shows the intensity distribution shown in FIG. An example of the intensity distribution at time t3 is shown.

At time t1, as shown in FIG. 5A, in the region RL on the left side of the irradiation surface R, the intensity of the light C in the region A1 is high, and the intensity of the light C is low in the surrounding regions A2 and A3. It has become. Further, in the region RR on the right side of the irradiation surface R, the intensity of the light C in the region B1 is low, and the intensity of the light C increases in the surrounding regions B2 and B3.

From time t1 to time t2, as shown in FIG. 5B, the region R on the left side of the irradiation surface R
In L, the intensity of the light C in the areas A1 and A2 decreases, and in the area RR on the right side of the irradiation surface R, the intensity of the light C in the areas B1 and B2 increases. Thereby, the intensity distribution of the light C in the region RL on the left side of the irradiation surface R becomes substantially equal to the intensity distribution of the light C in the region RR on the right side of the irradiation surface R.

Further, from time t2 to time t3, as shown in FIG. 5C, in the region RL on the left side of the irradiation surface R, the intensity of the light C in the region A1 is low, and light is applied to the surrounding regions A2 and A3. The strength of C is high. In the region RR on the right side of the irradiation surface R, the region B1
The intensity of the light C is high, and the intensity of the light C decreases in the surrounding areas B2 and B3.

That is, as shown in FIGS. 5A to 5C, the intensity distributions of the light C in the left region RL and the right region RR of the irradiation surface R are opposite to each other from time t1, t2, and t3. become. Due to the change of the intensity distribution with time, the total irradiation amount of the light C in the surface of the irradiation surface R becomes substantially equal. That is, even if the intensity of the light C is changed with time for each of the regions A1, A2, A3, B1, B2, and B3, the total irradiation amount of the light C on the irradiation surface R becomes uniform. When the pattern is transferred to the transfer object 70, the irradiation amount of the light C affects the dimension of the pattern. Therefore, when the total irradiation amount of the light C on the irradiation surface R is made uniform, the dimension after curing of the pattern transferred to the transfer target 70 becomes as designed.

FIGS. 6A and 6B are schematic plan views illustrating the positional deviation of the pattern within the irradiation region.
FIG. 6A shows a positional deviation when a pattern is formed by irradiating light with uniform intensity.
FIG. 6B shows the positional deviation when the pattern is formed by changing the intensity distribution.
In any of the figures, the length of the arrow represents the amount of pattern displacement, and the direction of the arrow represents the direction of pattern displacement. The pattern displacement is, for example, a displacement based on the base pattern.

As shown in FIG. 6A, when the irradiated surface R is irradiated with light with uniform intensity and the transfer target 70 is cured, the positional deviation of the uneven pattern 21 of the template 110 can be corrected sufficiently. Absent. When the uneven pattern 21 of the template 110 is misaligned, for example, the template 1
Rotation is performed when 10 is held by the holding unit 240, or magnification correction (reduction) and orthogonality correction are performed by pressing the end of the base material 10. Even if such correction is performed, the uneven pattern 21
This positional deviation cannot be sufficiently corrected, leading to a positional deviation of the pattern formed by the transfer.

For example, in the example shown in FIG. 6A, in the region RL on the left side of the irradiation surface R, the pattern is displaced from the central portion toward the peripheral portion. Further, in the region RR on the right side of the irradiation surface R, a pattern displacement occurs from the peripheral part toward the central part.

As shown in FIG. 6B, when the irradiation surface R has an intensity distribution of the light C and this intensity distribution is changed according to time, the positional deviation of the uneven pattern 21 of the template 110 is sufficiently corrected. Is done. In this case, not the overall correction of the pattern formation region formed by the concave / convex pattern 21, but the positional deviation of the pattern formed in the fine region is corrected.

In the example shown in FIG. 6B, the intensity distribution of the light C on the irradiation surface R is changed according to time as illustrated in FIGS. Forming. By such a change in the intensity distribution of the light C, the position of the pattern moves from the peripheral portion toward the central portion in the region RL on the left side of the irradiation surface R, and the position of the pattern in the region RR on the right side of the irradiation surface R. Will move from the central part toward the peripheral part. For this reason, the pattern formation position moves in a direction to cancel the positional deviation shown in FIG. 6A, and the positional deviation of the pattern can be sufficiently corrected as shown in FIG. 6B. That is, the positional deviation of the pattern that cannot be corrected by the correction performed by pressing the end portion of the substrate 10 is corrected.

FIG. 7 is a diagram illustrating the relationship between the light intensity and the stress at the time of curing the pattern.
The horizontal axis in FIG. 7 represents the intensity of the light C applied to the transfer object 70, and the vertical axis represents the stress at the time of curing the pattern. FIG. 7 shows the relationship between the intensity of the light C and the stress at the time of pattern hardening, using the rate of change of the intensity of the light C (the amount of increase in intensity per unit time) as a parameter. Here, the rate of change of the intensity of light C increases in the order from CR1 to CR4.

As shown in FIG. 7, the higher the rate of change in the intensity of light C, the greater the stress during pattern curing. The pattern forming apparatus 200 according to the present embodiment adjusts the intensity distribution of the light C on the irradiation surface R using the relationship shown in FIG.

For example, when irradiating two adjacent regions (first region r1 and second region r2) with a predetermined light intensity L1 among a plurality of regions obtained by dividing the irradiation surface R in the first region r1, The change rate of the intensity of the light C to be irradiated is a first change rate CR1, and the change rate of the intensity of the light C to be irradiated to the second region r2 is a fourth change rate CR4. From the relationship shown in FIG. 7, the change rate C in the light intensity L1.
In R1 and rate of change CR4, the stress at the time of hardening of the pattern is SR1 and SR4, respectively. Due to this stress difference (SR4-SR1), the pattern of the first region r1 moves in the direction of the second region r2 where the stress is large by an amount corresponding to the magnitude of the stress difference (SR4-SR1). become.

In the pattern forming apparatus 200 according to the present embodiment, the uneven pattern 2 of the template 110.
The transferred object 70 is based on data D representing the relationship between the amount and direction of positional deviation with respect to one reference (for example, the ground pattern) and the change in the intensity distribution of the light C irradiating the irradiation surface R with respect to time.
Controls the irradiation of light C to the light source.

This data D may be obtained by calculation by the control unit 220 or may be input from the outside by the input unit 230.

The pattern forming apparatus 200 according to the present embodiment corrects the misalignment of the uneven pattern of the template 110 when it is transferred to the transfer target 70 and cured. As a result, a pattern is formed at an accurate position with respect to a reference (for example, a ground pattern) by imprinting using the template 110.

FIG. 8 is a schematic diagram illustrating another configuration example of the light irradiation unit.
FIG. 8 illustrates the light irradiation unit 210 </ b> A, the holding unit 24, and the stage 250 in the configuration of the pattern forming apparatus 200.

The light irradiation unit 210 </ b> A includes a scanning unit 212 and an adjustment unit 215.
The scanning unit 212 is a part that sequentially moves the irradiation position of the light C within the irradiation surface parallel to the main surface 10 a of the base material 10 of the template 110. The scanning unit 212 is provided with, for example, a movable mirror that changes the traveling direction of the light C emitted from the light source 217.

The adjustment unit 215 adjusts the intensity of the light C scanned by the scanning unit 212 in accordance with an instruction from the control unit 220. For example, the adjustment unit 215 directly controls the light source 217 to adjust the intensity of the light C emitted from the light source 217. The adjustment unit 215 is connected to the light source 2 via a light control device such as a liquid crystal element.
The amount of light emitted from 17 may be adjusted. The adjustment unit 215 includes a scanning unit 212.
The intensity of the light C is adjusted in accordance with the irradiation position of the light C scanned by. Thereby, a predetermined intensity distribution is obtained in the plane of the irradiation surface R.

The scanning unit 212 repeats scanning of the light C on the irradiation surface R. The adjustment unit 215 has an irradiation surface R
The amount of light is adjusted so that one intensity distribution is obtained by at least one scan of the light C. The adjustment unit 215 adjusts the amount of light so that the intensity distribution changes according to the repeated scanning of the light C on the irradiation surface R by the scanning unit 212. A change corresponding to the time of the intensity distribution is generated by scanning the irradiation surface R a plurality of times.

Even when the intensity distribution is obtained by scanning the light C, the intensity of the light C is adjusted so that the total irradiation amount of the light C on the irradiation surface R (cumulative irradiation amount by a plurality of scans) is uniform. The

In the scanning of the light C by the scanning unit 212, the light amount is adjusted in a finer region with respect to the irradiation surface R, and the continuous light amount is adjusted in the scanning direction.

(Second Embodiment)
FIG. 9 is a flowchart illustrating the pattern forming method according to the second embodiment.
In the pattern forming method according to the present embodiment, the template 110 having the concavo-convex pattern 21 is used.
This is an imprint method in which the concavo-convex pattern 21 is transferred to the transfer object 70.
A template 110 used in the pattern forming method according to the present embodiment includes a base material 10 having a main surface 10a and an uneven pattern 21 provided on the main surface 10a of the base material 10.
FIG. 9 shows a pattern forming method using the template 110 in order.

First, as shown in step S <b> 101, the transfer target 70 is applied on the substrate 60. The transfer object 70 is a photosensitive material. A photocurable organic material is used as the photosensitive material.

Next, as shown in step S <b> 102, the template 110 is brought into contact with the transfer object 70. As a result, the transferred object 70 enters the concave pattern 21 b of the template 110.

Next, as shown in step S <b> 103, the transferred object 70 is cured in a state where the template 110 is in contact with the transferred object 70. In this embodiment, since a photocurable organic material is used, the transfer object 70 is irradiated with light (for example, ultraviolet light) C to be cured.

Next, as shown in step S <b> 104, the template 110 is released after the transfer target 70 is cured. As a result, the uneven pattern 21 of the template 110 is formed on the transfer object 70.
Is transcribed. A transfer pattern 70 a in which the uneven shape of the uneven pattern 21 is reversed is formed on the transfer object 70.

In the pattern forming method according to the present embodiment, the transferred object 70 shown in step S103 above.
In the step of curing, the intensity distribution of the light C in the plane of the irradiation surface R parallel to the main surface 10a is changed according to time.

10A to 10C are schematic cross-sectional views showing specific examples of the pattern forming method.
10A to 10C, the semiconductor device 3 is formed by the pattern forming method according to this embodiment.
An example of manufacturing 00 is shown.

First, as shown in FIG. 10A, the transfer target 70 is provided on the substrate 60. In the method for manufacturing the semiconductor device 300, for example, the semiconductor layer 60S is included in the substrate 60. Semiconductor layer 60
In S, an element such as a transistor may be formed.

As the transfer object 70, for example, a photocurable organic material is used. The transfer object 70 is dropped onto the substrate 60 from the nozzle N by an inkjet method, for example. The transferred object 70 may be provided uniformly by spin coating or the like.

Next, as shown in FIG. 10B, a template 110 is prepared. The template 110 used in the pattern forming method according to the present embodiment includes a concavo-convex pattern 21 provided on the main surface 10a of the substrate 10.

Then, the uneven pattern 21 of the template 110 is brought into contact with the transfer object 70.
The transferred object 70 enters the concave pattern 21b of the concave / convex pattern 21 by a capillary phenomenon and fills the concave pattern 21b.

Next, the light C is irradiated from the substrate 10 side of the template 110 in a state where the uneven pattern 21 of the template 110 is in contact with the transfer target 70. The light C is, for example, ultraviolet light.
The light C passes through the substrate 10 and the concave / convex pattern 21 and is irradiated onto the transfer object 70. The transfer object 70 made of a photocurable organic material is cured by being irradiated with the light C.

In the irradiation of the light C, as described above, the intensity distribution of the light C in the surface of the irradiation surface R parallel to the main surface 10a is changed according to time. As a result, the stress due to the shrinkage during the curing of the transfer object 70 is adjusted.

Next, as illustrated in FIG. 10C, the template 110 is released from the transfer target 70. As a result, a transfer pattern 70 a is formed on the transfer object 70 by transferring the uneven shape of the uneven pattern 21 of the template 110.

When the template 110 is brought into contact with the transferred object 70, the convex pattern 21a of the concave / convex pattern 21 and the surface of the substrate 60 may not be completely in contact with each other. At this time, the transferred object 70 is interposed between the convex pattern 21a and the surface of the substrate 60, and after the template 110 is released, it remains at the bottom of the concave portion of the transferred pattern 70a.

Further, when the substrate 60 is processed using the transfer pattern 70a as a mask, the substrate 60 is etched by, for example, anisotropic RIE (Reactive Ion Etching). After the etching, the transfer pattern 70a is removed. Thereby, the transfer pattern 70 is formed on the substrate 60.
A pattern corresponding to a is formed. By forming a pattern on the substrate 60 including the semiconductor layer 60S, the semiconductor device 300 is completed.

In the imprint method, the same template 110 is used to transfer another transfer object 70 as shown in FIG.
Each step represented by 0 (a) to (c) is repeated. Thus, one template 11
The same pattern is repeatedly formed using 0. Therefore, the productivity of the semiconductor device 300 is improved.

In the manufacturing method of the semiconductor device 300 to which such a pattern forming method is applied, the transfer in which the positional deviation with respect to the reference of the concave-convex pattern 21 of the template 110 (for example, the position of the element or base pattern formed in the semiconductor layer 60S) is corrected. A pattern such as the pattern 70a is formed. When a pattern such as the transfer pattern 70a is formed on the base pattern, alignment with the base pattern is accurately performed. Thereby, the semiconductor device 300 with high alignment accuracy of the upper and lower patterns is provided.

As described above, according to the pattern forming apparatus, the pattern forming method, and the semiconductor device manufacturing method according to the embodiment, it is possible to perform pattern formation in consideration of the positional deviation of the uneven pattern of the template.

Although the present embodiment has been described above, the present invention is not limited to these examples. For example, the intensity distribution of the light C described above is an example, and is appropriately set according to the amount of deviation and the direction of deviation of the uneven pattern 21 with respect to the reference. Further, those in which those skilled in the art appropriately added, deleted, and changed the design of the above-described embodiments, and combinations of the features of each embodiment as appropriate also include the gist of the present invention. As long as it is included, it is included in the scope of the present invention.

Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 10 ... Base material, 10a ... Main surface, 21 ... Uneven pattern, 24 ... Holding part, 60 ... Substrate, 60S
... Semiconductor layer, 70 ... Transfer object, 70a ... Transfer pattern, 110 ... Template, 200 ...
Pattern forming apparatus, 210, 210A ... light irradiation unit, 211 ... dividing unit, 212 ... scanning unit, 2
DESCRIPTION OF SYMBOLS 15 ... Adjustment part, 217 ... Light source, 220 ... Control part, 230 ... Input part, 240 ... Holding part, 25
0 ... stage, 300 ... semiconductor device, C ... light, D ... data, R ... irradiated surface

Claims (9)

Using a template provided with a concavo-convex pattern on the main surface of the substrate, the transferred object is irradiated with light in a state where the template is imprinted on the transferred object, and the transferred object is cured to form the concavo-convex pattern. A pattern forming apparatus for transferring a shape to the transfer object,
A light irradiating unit capable of irradiating the light having an intensity distribution in an irradiation surface parallel to the main surface, the dividing unit dividing the light into a plurality of regions in the irradiation surface; A light irradiation unit including an adjustment unit that adjusts the intensity of the light for each region;
An input unit for inputting data regarding the relationship between the amount and direction of deviation with respect to the reference of the uneven pattern and the change in the intensity distribution with respect to time;
A control unit that controls the light irradiation unit according to the data and changes the intensity distribution according to time so that the total irradiation amount of the light is uniform within the irradiation surface in a certain time;
A pattern forming apparatus comprising: Using a template provided with a concavo-convex pattern on the main surface of the substrate, the transferred object is irradiated with light in a state where the template is imprinted on the transferred object, and the transferred object is cured to form the concavo-convex pattern. A pattern forming apparatus for transferring a shape to the transfer object,
A light irradiation unit capable of irradiating the light having an intensity distribution in an irradiation surface parallel to the main surface;
An input unit for inputting data regarding the relationship between the amount and direction of deviation with respect to the reference of the uneven pattern and the change in the intensity distribution with respect to time;
A control unit that controls the light irradiation unit according to the data and changes the intensity distribution according to time;
A pattern forming apparatus comprising: The pattern forming apparatus according to claim 2, wherein the control unit changes the intensity distribution so that a total irradiation amount of the light becomes uniform within the irradiation surface in a predetermined time. The light irradiator is
A dividing unit that divides the light into the plurality of regions in the irradiation surface;
An adjustment unit for adjusting the intensity of the light for each of the plurality of regions;
The pattern formation apparatus of Claim 2 or 3 containing this. The light irradiator is
A scanning unit that sequentially moves the irradiation position of the light within the irradiation surface;
An adjustment unit that adjusts the irradiation position and the intensity distribution that are moved by the scanning unit, and adjusts the intensity of the light;
The pattern formation apparatus as described in any one of Claims 2-4 containing these. Using a template provided with a concavo-convex pattern on the main surface of the substrate, and imprinting the template on the transfer object;
Irradiating the transferred object with light in a state where the template is imprinted on the transferred object, and curing the transferred object;
Releasing the template from the transferred material;
With
The step of curing the object to be transferred includes irradiating the object to be transferred with the light having an intensity distribution in an irradiation surface parallel to the main surface, and the amount and direction of deviation with respect to the reference of the concavo-convex pattern. , Inputting data relating to a change in the intensity distribution with respect to time, controlling the intensity of the light applied to the transfer object according to the data, and changing the intensity distribution of the light according to time. A pattern forming method including: The pattern forming method according to claim 6, wherein the step of curing the transfer object includes changing the intensity distribution so that the total irradiation amount of the light becomes uniform within the irradiation surface in a predetermined time. The pattern according to claim 7, wherein the step of curing the transfer object includes dividing the light into a plurality of regions in the irradiation surface and adjusting the intensity of the light for each of the plurality of regions. Forming method. The manufacturing method of a semiconductor device provided with the process of forming a pattern by the pattern formation method as described in any one of Claims 6-8 on a semiconductor layer.

Images