JP2016091617A - Plasma processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma processing device suitable for processing a surface of a substrate targeted for processing with high uniformity or high degree of freedom without being restricted by a fixed condition of the device.SOLUTION: A plasma processing device 10 comprises: a process chamber 11; a plasma generation chamber 12 having a communicating hole 13 communicating to the process chamber 11; plasma-generation means (including an RF antenna 15 and a plasma-generation-gas introduction part 16) for generating plasma in the plasma generation chamber 12; holding means (substrate holding part 14) provided in the process chamber 11 for holding a substrate (substrate S) to be processed so as to be opposed to the communicating hole 13; and moving means for relatively moving the position of the substrate held by the holding means, and the position of the communicating hole 13.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a plasma processing apparatus that performs processing such as film formation and etching on a surface of a substrate to be processed such as a semiconductor substrate using plasma.

  In a general plasma processing apparatus, a gas is introduced into a processing chamber in which a substrate to be processed is installed, a high-frequency electromagnetic field is formed in the processing chamber to turn the gas into plasma, and dissociated molecules are incident on the substrate to be processed. By doing so, the surface of the substrate to be processed is subjected to processing such as film formation and etching.

  In order to perform processing uniformly regardless of the position of the surface of the substrate to be processed, it is necessary to generate plasma with a uniform density in the processing chamber. Patent Document 1 discloses a plasma having a high-frequency antenna formed by bending an antenna line on an upper surface so that a linear conductor (antenna line) is arranged over substantially the entire upper surface of the upper wall of the processing chamber. A processing device is described. However, in Patent Document 1, the density of arranging the antenna lines is not uniform, and the density is formed according to the distance from the feeding point to the antenna lines, the distance from the side wall of the processing chamber, and the like. Thereby, it is said that the bias of the intensity distribution of the high frequency electromagnetic field can be suppressed and the plasma density can be made more uniform.

Japanese Patent Laid-Open No. 2003-229410 International Publication WO2012 / 018024

  In the apparatus described in Patent Document 1, since the arrangement of antenna lines is fixed, it is difficult to adjust the intensity distribution of the high-frequency electromagnetic field once the apparatus is manufactured. Therefore, in the apparatus described in Patent Document 1, it is difficult to make the plasma density uniform in the processing chamber for various cases. Conversely, processing according to the position of the surface of the substrate to be processed cannot be performed according to the purpose.

  A problem to be solved by the present invention is a plasma processing apparatus suitable for performing processing with high uniformity or high degree of freedom on the surface of a substrate to be processed without being restricted by fixed conditions of the apparatus. Is to provide.

The plasma processing apparatus according to the present invention, which has been made to solve the above problems,
a) a processing chamber;
b) a plasma generation chamber having a communication hole communicating with the processing chamber;
c) plasma generation means for generating plasma in the plasma generation chamber;
d) a substrate-to-be-treated holding means for holding the substrate to be treated so as to face the communication hole provided in the processing chamber;
e) A substrate to be processed held by the substrate to be processed holding means and a moving means for relatively moving the position of the communication hole.

  In the plasma processing apparatus according to the present invention, the plasma generated in the plasma generating chamber by the plasma generating means moves from the communication hole to the processing chamber and is supplied to the surface of the substrate to be processed held by the substrate holding means to be processed. . And the process by a plasma is performed in the predetermined range of the surface of a to-be-processed base | substrate by moving the position of a to-be-processed base | substrate and a communicating hole relatively by a moving means. As a result, depending on the plasma density, the moving speed of the substrate to be processed, etc., the entire substrate to be processed can be processed uniformly or according to the position of the surface of the substrate to be processed. Here, the plasma may be directly applied to the surface of the substrate to be processed (for example, etching), or a gas is supplied between the communication hole and the surface of the substrate to be processed so that the molecules of the gas come into contact with the plasma. The material dissociated by this may act on the surface of the substrate to be processed (for example, film formation by deposition).

  For example, the parameters such as the plasma density and the moving speed of the substrate to be processed are made constant over time, and the parameters that can cause a spatial distribution, such as the plasma density, are made spatially constant, so that On the other hand, uniform processing can be performed regardless of the position of the surface. Here, the spatial distribution of the plasma density may be controlled in a portion in the vicinity of the communication hole smaller than the surface of the substrate to be processed in the present invention, so that the entire surface of the substrate to be processed has a uniform density as in the past. Uniform treatment can be realized more easily than when plasma is generated. On the other hand, by changing various parameters spatially and / or temporally, processing according to the position of the surface of the substrate to be processed can be performed.

  The communication hole may be a spot (dot) shape or a slit (linear shape). The spot-shaped communication hole is suitable for fine control according to the position of the surface of the substrate to be processed. On the other hand, the communication hole, which is a slit, is suitable for processing a wide range of the surface of the substrate to be processed in a shorter time.

  In the present invention, the type of plasma generating means is not particularly limited, and various types such as inductively coupled plasma generating means, capacitively coupled plasma generating means, and electron cyclotron resonance (ECR) plasma generating means can be used. The plasma generation means includes a gas supply means for supplying a gas to a predetermined area in the plasma generation chamber, and a high frequency electromagnetic field generation means for generating a high frequency electromagnetic field in the predetermined area. The high frequency electromagnetic field generating means includes a high frequency antenna through which a high frequency current flows in the inductively coupled plasma generating means, a pair of electrodes to which a high frequency voltage is applied in the capacitively coupled plasma generating means, and a microwave generating apparatus in the ECR plasma generating means, and It is a waveguide. The high-frequency electromagnetic field generation means may be in the plasma generation chamber or outside the plasma generation chamber.

  When using the communication hole which is a slit, it is desirable that the plasma generating means includes a high-frequency antenna having a working portion which is made of a linear linear conductor and is arranged in parallel to the slit. Here, the “action part” refers to a part that contributes to the generation of a high-frequency electromagnetic field in the plasma generation chamber among the linear conductors constituting the high-frequency antenna. By using such a high-frequency antenna, the uniformity of the intensity distribution of the high-frequency electromagnetic field in the direction parallel to the slit is increased, and thereby plasma can be uniformly supplied from the communication hole to the surface of the substrate to be processed. Therefore, the uniformity of processing on the substrate to be processed can be further increased.

  Moreover, when using the high frequency antenna which has the said action | operation part, you may use only one high frequency antenna, and may arrange and use two or more action | operation parts in the longitudinal direction of a slit. In this way, since the impedance is reduced by shortening the linear conductor per high-frequency antenna, strong high-frequency power can be supplied, and thereby high-density plasma can be generated. However, while it is difficult to arrange a plurality of high-frequency antennas without gaps, when only one high-frequency antenna is used, such gaps do not occur, so that the uniformity of plasma density is increased. be able to.

  In the plasma processing apparatus according to the present invention, the wall defining the plasma generation chamber has a linear recess parallel to the slit, which is recessed from the outside to the inside of the plasma generation chamber, and the plasma generation means However, it is desirable to provide the high frequency antenna arrange | positioned at the said recessed part. Note that the high-frequency antenna in this case may have an action portion made of the linear linear conductor described above, or may be other than that. With this configuration, a space in the plasma generation chamber exists around the high-frequency antenna with the wall of the recess therebetween, so that plasma can be generated efficiently in the plasma generation chamber.

In the plasma processing apparatus according to the present invention, the plasma generation unit includes a high-frequency antenna, and shields the high-frequency electromagnetic field between the high-frequency antenna and the processing target substrate holding unit and at a position other than the communication hole. It is desirable to provide a shield. This suppresses the high-frequency electromagnetic field formed by the high-frequency antenna from reaching the vicinity of the surface of the substrate to be processed, so that ions and plasma in the plasma come into contact with gas molecules (other than plasma molecules) in the processing chamber. It is possible to prevent radicals generated in this way from being dissociated more than necessary. For example, when a silicon (Si) thin film is formed using silane (SiH ₄ ) gas, it is desirable to dissociate SiH ₄ molecules into SiH ₃ radicals and hydrogen (H) radicals by contact with plasma. It is known that when dissociation further proceeds by a high-frequency electromagnetic field and SiH ₂ , SiH or Si radicals are generated, defects are formed in the film or the film density is reduced (for example, Patent Document 2). ). By using the shield in the present invention, it is possible to suppress excessive dissociation of SiH ₄ molecules.

  The plasma processing apparatus according to the present invention can process various substrates to be processed such as a plate-like (substrate) and a block-like one. The plasma processing apparatus according to the present invention can also process a flexible substrate having flexibility such as a plastic film. In this case, the to-be-processed substrate holding means can be composed of a first roll for winding the flexible substrate before processing and a second roll for winding the flexible substrate after processing. At the time of processing, the flexible substrate is sent from the first roll to the second roll and wound around the second roll. Therefore, such a target substrate holding means also serves as a moving means.

  According to the present invention, it is possible to obtain a plasma processing apparatus suitable for performing processing with high uniformity or high degree of freedom on the surface of a substrate to be processed.

It is a figure which shows 1st Example of the plasma processing apparatus which concerns on this invention, Comprising: (a) One longitudinal section and (b) The figure in a longitudinal cross section perpendicular | vertical to this longitudinal section. The longitudinal cross-sectional view which shows 2nd Example of the plasma processing apparatus which concerns on this invention. It is a figure which shows 3rd Example of the plasma processing apparatus which concerns on this invention, Comprising: (a) One longitudinal section and (b) The figure in a longitudinal section perpendicular | vertical to this longitudinal section. It is a figure which shows 4th Example of the plasma processing apparatus which concerns on this invention, Comprising: (a) One longitudinal section and (b) The figure in a longitudinal section perpendicular | vertical to this longitudinal section. The longitudinal cross-sectional view which shows 5th Example of the plasma processing apparatus which concerns on this invention.

  An embodiment of a plasma processing apparatus according to the present invention will be described with reference to FIGS.

(First embodiment)
FIG. 1A is a cross-sectional view in one longitudinal section (hereinafter referred to as “AA ′ longitudinal section”) of the plasma processing apparatus 10 of the first embodiment, and FIG. 1B is an AA ′ longitudinal section. FIG. 5 is a cross-sectional view taken along the line BB ′ vertical to FIG. FIG. 1 (a) shows a BB ′ longitudinal section, and FIG. 1 (b) shows an AA ′ longitudinal section by an alternate long and short dash line.

  The plasma processing apparatus 10 includes a processing chamber 11 and a plasma generation chamber 12. The plasma generation chamber 12 is provided on the upper wall of the processing chamber 11 and communicates with the inside of the processing chamber 11 through a slit-like communication hole (hereinafter referred to as “slit”) 13. The slit 13 extends in a direction perpendicular to the AA ′ longitudinal section (parallel to the BB ′ longitudinal section).

  A substrate holder 14 is provided in the processing chamber 11. The substrate holding part 14 has a flat plate shape, and the substrate S is held on the upper surface of the flat plate so as to face the slit 13. The substrate holding part 14 has a moving mechanism that moves in the left-right direction of the AA ′ longitudinal section, that is, in a direction perpendicular to the slit 13. The left end of the movement range of the substrate holding unit 14 is a position where the right end of the substrate S deviates from a position immediately below the left end of the slit 13 (see the broken line portion shown in the processing chamber 11 in FIG. 1A). The right end of the substrate S is a position where the left end of the substrate S deviates from the position immediately below the right end of the slit 13 (same as above).

  The upper wall of the plasma generation chamber 12 is provided with a recess 121 that is recessed from the outside to the inside of the plasma generation chamber 12. The recess 121 extends over the entire length of the plasma generation chamber 12 perpendicular to the AA ′ longitudinal section, that is, parallel to the slit 13. The high frequency antenna 15 is accommodated in the recess 121 (that is, outside the plasma generation chamber 12). The high-frequency antenna 15 has an action portion made of a tubular linear conductor that extends in parallel to the recess 121 (that is, to the slit 13) over the entire length of the recess 121. At both ends of the action portion, the linear conductor is bent by 90 °, and the entire high-frequency antenna 15 has a U-shape. One end of the high-frequency antenna 15 is connected to a high-frequency power source via a matching unit 151, and the other end is grounded. A coolant such as water can flow through the tube of the high-frequency antenna 15.

  A plasma generation gas introduction unit 16 that introduces a plasma generation gas for generating plasma into the plasma generation chamber 12 is provided in the space 122 on both sides of the recess 121 in the plasma generation chamber 12. On the other hand, in the processing chamber 11, film raw material gas introduction portions 17 for introducing a film raw material gas, which is a raw material of a film formed on the substrate S, directly below the slit 13 are provided on both sides immediately below the slit 13. . Both the plasma generation gas introduction section 16 and the film source gas introduction section 17 are formed by providing a large number of holes on the surface of a quartz tube, and these tubes are provided over the entire length of the slit 13 in the longitudinal direction. It has been.

  A metal shield 18 that shields the high-frequency electromagnetic field is provided on the upper wall of the processing chamber 11 and around the plasma generation chamber 12. The shield 18 is located between the high frequency antenna 15 and the processing chamber 11.

  In addition, the plasma processing apparatus 10 of the present embodiment is provided with a vacuum pump (not shown) for exhausting the gas in the processing chamber 11. The inside of the plasma generation chamber 12 is exhausted by this vacuum pump through the processing chamber 11 and the slit 13.

  The operation of the plasma processing apparatus 10 of this embodiment will be described. First, after the substrate S is placed on the substrate holder 14, a gas such as air in the processing chamber 11 and the plasma generation chamber 12 is exhausted by a vacuum pump. Then, the plasma generation gas is introduced into the plasma generation chamber 12 from the plasma generation gas introduction unit 16. Since the plasma generation gas introduction section 16 is provided in the direction parallel to the slit 13 over the entire length in the longitudinal direction of the slit 13, the plasma generation gas is uniformly distributed in the direction parallel to the slit 13 in the plasma generation chamber 12. Supplied. On the other hand, in the processing chamber 11, the film source gas is introduced from the film source gas introduction unit 17 immediately below the slit 13.

  In addition, a high-frequency current is caused to flow through the high-frequency antenna 15 from the high-frequency power source 152 while flowing a refrigerant through the tube of the high-frequency antenna 15. Thereby, a high frequency electromagnetic field is formed in the plasma generation chamber 12 by the high frequency antenna 15. Due to this high frequency electromagnetic field, molecules of the plasma generation gas introduced into the plasma generation chamber 12 are dissociated into plasma. Here, since the high-frequency antenna 15 extends over the entire length of the plasma generation chamber 12 in parallel with the slit 13, the strength of the high-frequency electromagnetic field becomes uniform in the direction parallel to the slit 13.

  Thus, since the supply amount of the plasma generation gas and the strength of the high-frequency electromagnetic field are both uniform in the direction parallel to the slit 13, the density of the generated plasma is uniform in the same direction. The generated plasma is introduced into the processing chamber 11 through the slit 13 and comes into contact with the film source gas immediately below the slit 13. As a result, the molecules of the film source gas are dissociated, reach the surface of the substrate S held by the substrate holding unit 14, and a thin film is formed on the surface of the substrate S. Meanwhile, the moving mechanism moves the substrate holding part 14 at a constant speed in a direction perpendicular to the slit 13.

  As described above, plasma is generated at a uniform density in the direction parallel to the slit 13, and the film source gas is supplied at a uniform density, and the substrate holder 14 ( That is, when the substrate S moves at a constant speed, a thin film can be uniformly formed on the surface of the substrate S in any direction.

  In this embodiment, since the high-frequency antenna 15 is provided in the recess 121, the high-frequency electromagnetic field formed not only below but also on the side of the high-frequency antenna 15 enters the space 122 on both sides of the recess 121. Therefore, plasma is generated efficiently because it contributes to the generation of plasma.

  In the present embodiment, the shield 18 is provided between the high frequency antenna 15 and the processing chamber 11, so that the high frequency electromagnetic field generated in the high frequency antenna 15 can be prevented from entering the processing chamber 11. Therefore, the film source gas molecules in the processing chamber 11 are prevented from being excessively dissociated by the plasma.

  Up to this point, the case where film formation is performed on the substrate S using the plasma processing apparatus 10 according to the first embodiment has been described. However, the plasma processing apparatus 10 may perform other processes such as etching on the substrate S. It can also be used for applications. In the case of etching, the film source gas introduction part 17 is unnecessary.

(Second embodiment)
Next, a second embodiment of the plasma processing apparatus according to the present invention will be described with reference to FIG. FIG. 2 shows the configuration of the plasma processing apparatus 20 of the present embodiment in a cross section corresponding to the BB ′ cross section of FIG. The configuration of the plasma processing apparatus 20 in the cross section corresponding to the AA ′ cross section of FIG. 1A is the same except for the reference numerals of the high frequency antenna (15 in the first embodiment, 25 in the second embodiment). Therefore, the illustration is omitted. Further, since the configuration of the plasma processing apparatus 20 other than the following high-frequency antenna 25, matching unit 251 and high-frequency power source 252 is the same as that of the plasma processing apparatus 10 of the first embodiment, it is the same as that of the first embodiment in FIG. The description will be omitted after the reference numerals are attached.

  The plasma processing apparatus 20 of this embodiment includes a plurality of high frequency antennas 25 in the recess 121. The high-frequency antenna 25 is the same as the high-frequency antenna 15 of the first embodiment in that it has an action part made of a linear conductor parallel to the slit 13, but the length of the linear conductor of the action part in each individual high-frequency antenna 25. Is shorter than the high-frequency antenna 15 of the first embodiment. Each high-frequency antenna 25 is provided so that the action portions are arranged in a line in the longitudinal direction of the slit. One end of each high frequency antenna 25 is connected in parallel to one high frequency power source 252. A matching unit 251 is connected between the high-frequency antenna 25 and the high-frequency power source 252 for each high-frequency antenna 25. The other end of each high frequency antenna 25 is grounded. Note that the same number of high-frequency power sources 252 as the high-frequency antennas 25 may be used and connected to one high-frequency antenna 25 one by one.

  The method of using the plasma processing apparatus 20 of this embodiment is the same as that of the high-frequency antenna 15 of the first embodiment except that a high-frequency current is supplied from the high-frequency power source 252 to the plurality of high-frequency antennas 25.

  Comparing the first embodiment and the second embodiment, the first embodiment is superior in that there is no break in the linear conductor of the working part in terms of high uniformity of plasma in the direction parallel to the slit 13. ing. On the other hand, in the second embodiment, the length of the linear conductor of the action part in each high frequency antenna 25 is shorter than that of the high frequency antenna 15 of the first embodiment, so that the impedance of the high frequency antenna 25 is low and stronger high frequency power is obtained. Can be supplied. Therefore, the second embodiment can generate a plasma with a higher density, and can form a film at a higher speed.

(Third embodiment)
Next, a third embodiment of the plasma processing apparatus according to the present invention will be described with reference to FIG. The plasma processing apparatus 30 according to the third embodiment is an apparatus that performs processing such as coating and sputtering on the surface of a film corresponding to the above-described flexible substrate (hereinafter referred to as “film-like substrate FS”). Such an apparatus is, for example, a gas such as oxygen by applying a coating made of a metal oxide such as silicon oxide or aluminum oxide on the surface of a plastic film substrate FS such as polyethylene terephthalate (PET) or nylon. Is used to produce a film suitable for applications such as food packaging.

  The plasma processing apparatus 30 according to this embodiment includes a film-like substrate holding unit 34 in the processing chamber 31. Since the configuration of the plasma processing apparatus 30 other than the processing chamber 31 and the film-like substrate holder 34 described below is the same as that of the plasma processing apparatus 10 of the first embodiment, the same reference numerals as those of the first embodiment are given in FIG. In addition, explanation is omitted.

  The film-like substrate holding unit 34 has two rolls, a first roll 341 and a second roll 342. A film-like substrate FS before processing is wound around the first roll 341, and a film-like substrate FS after processing is wound around the second roll 342. The film-like substrate holding part 34 also has a function as a substrate moving means for moving the film-like substrate FS by sending the film-like substrate FS from the first roll 341 and winding it around the second roll 342. The film-like substrate holding part 34 is arranged so that the film-like substrate FS moving from the first roll 341 to the second roll 342 passes through a position facing the slit 13 in a direction perpendicular to the slit 13. Compared with the processing chamber 11 in the first embodiment, the processing chamber 31 has a smaller size in the horizontal direction by an amount that does not require a space for the substrate on the flat plate to move in the horizontal direction. Is the same.

  The operation of the plasma processing apparatus 30 of the present embodiment is the same as that of the plasma processing apparatus 10 of the first embodiment except for the following two points. The first point is that the operation of moving the substrate (film substrate FS) is different as described above. Second, since the material of the coating is a metal oxide, the gas of the metal material (for example, silane gas in the case of coating silicon oxide) is supplied from the film raw material gas introduction portion 17 into the processing chamber 31. It is to supply oxygen.

  In all of the first to third embodiments described so far, the substrate (including the film-like substrate) is moved in the direction perpendicular to the slit, but the direction of movement may be other than that. Good. However, in order to process the surface of the substrate in a planar shape, it is necessary to move the substrate non-parallel to the slit.

(Fourth embodiment)
Up to this point, an example in which a slit-shaped communication hole is used has been described. However, in the fourth embodiment, a spot (dot) -shaped communication hole is used. The configuration of the plasma processing apparatus 40 of this embodiment is shown in FIG. The plasma processing apparatus 40 includes a plasma generation chamber 42 on a processing chamber 41, and a spot-shaped communication hole 43 between the processing chamber 41 and the plasma generation chamber 42.

  In the present embodiment, the plasma generation chamber 42 is narrower in the BB ′ longitudinal section than the plasma generation chamber 12 of the first embodiment. The communication hole 43 is provided at a position passing through the AA ′ longitudinal section and the BB ′ longitudinal section of FIG. 4. The upper wall of the plasma generation chamber 42 is provided with a recess 421 that is recessed from the outside to the inside of the plasma generation chamber 42. The recess 421 extends linearly perpendicular to the AA ′ longitudinal section, and the high frequency antenna 45 is accommodated therein. In this embodiment, the concave portions 421 and the action portions of the high-frequency antenna 45 have a shorter length in the BB ′ vertical section than that of the first embodiment. In the space 422 on both sides of the concave portion 421, a plasma generation gas introduction portion 46 made of a tube extending from the upper wall into the plasma generation chamber 12 is provided in the AA ′ longitudinal section.

  A substrate holding unit 44 is provided in the processing chamber 41. The substrate holding unit 44 is movable on the X stage 44X movable in the direction perpendicular to the BB ′ longitudinal section (X direction) and movable in the direction perpendicular to the AA ′ longitudinal section (Y direction). There is a stage 44Y, and the substrate S is placed on the Y stage 44Y. Therefore, the substrate holding part 44 also has a function as a moving means. Further, in the processing chamber 41, film source gas introduction portions 47 for introducing a film source gas directly below the communication hole 43 are provided on both sides immediately below the communication hole 43.

  The operation of the plasma processing apparatus 40 of the present embodiment is the same as the operation of the plasma processing chamber 40 except for the spatial range of the plasma supplied from the plasma generation chamber 42 through the communication hole 43 into the processing chamber 41 and the movement of the substrate holder 44. This is the same as the plasma processing apparatus 10 of one embodiment. The space range of the supplied plasma has a spot shape corresponding to the shape of the communication hole 43. Therefore, on the surface of the substrate S, the molecules of the film source gas dissociated by the plasma reach the spot-shaped range. Then, the substrate holding part 44 moves the substrate S in the X direction and the Y direction, so that the film material can be deposited at an arbitrary position on the substrate S. At that time, a uniform film can be produced by making the supply amount of the plasma generating gas and the film source gas, the strength of the high frequency electromagnetic field, and the moving speed of the substrate S constant. In addition, by changing these parameters over time, films having different thicknesses depending on the position on the substrate S can be produced.

(5th Example)
Next, a fifth embodiment of the plasma processing apparatus according to the present invention will be described with reference to FIG. In the plasma processing apparatus 50 of this embodiment, the plasma generation chamber 52 is accommodated in the processing chamber 51 and is suspended from the upper wall of the processing chamber 51. A slit 53 is provided in the lower wall of the plasma generation chamber 52. Further, the plasma processing apparatus 50 includes a moving mechanism (not shown) that moves the plasma generation chamber 52 along the upper wall of the processing chamber 51 in a direction perpendicular to the slit 53. A concave portion 521 and a high-frequency antenna 55 similar to those in the first embodiment are provided on the upper wall of the plasma generation chamber 52, and a plasma generation gas introduction portion 56 similar to that in the first embodiment is provided in the plasma generation chamber 52. It has been. A shield 58 similar to that of the first embodiment is provided around the plasma generation chamber 52.

  In the processing chamber 51, film raw material gas introducing portions 57 for introducing a film raw material gas, which is a raw material of a film to be formed on the substrate S, directly below the slit 53 are provided on both sides immediately below the slit 53. The film source gas introduction unit 57 is fixed to the lower surface of the lower wall of the plasma generation chamber 52 so that the film source gas introduction unit 57 also moves as the plasma generation chamber 52 moves. A substrate holder 54 on which the substrate S is placed is fixed to the bottom surface of the processing chamber 51.

  Both ends of the high-frequency antenna 55 are connected to flexible cables, and these cables are led out of the processing chamber 51 through feedthroughs. With these cables, one end of the high-frequency antenna 55 is connected to a high-frequency power source via a matching unit provided outside the processing chamber 51, and the other end is grounded. Instead of grounding outside the processing chamber 51 in this way, a conductive material is used for the wall of the processing chamber 51, the other end is connected to the wall in the processing chamber 51, and then the wall is It may be grounded. In addition, each of the plasma generation gas introduction section 56 and the film source gas introduction section 57 is connected to a flexible pipe that is drawn out to the outside through a feedthrough. By using these flexible cables and tubes, it is possible to move the high-frequency antenna 55, the plasma generation gas introduction part 56, and the film source gas introduction part 57 together with the plasma generation chamber 52 without any trouble.

  The operation of the plasma processing apparatus 50 of the present embodiment is the same as the operation of the plasma processing apparatus 10 of the first embodiment, except that the plasma generation chamber 52 is moved instead of the substrate holder.

  In all of the first to fifth embodiments described so far, the substrate to be processed is a plate-like substrate or a film-like substrate, but the same plasma is applied to the block-like substrate to be processed. Processing can be performed. In any of these embodiments, the high-frequency antenna is provided in the recess, but it may be disposed outside the plasma generation chamber without providing the recess, or may be disposed in the plasma generation chamber. Furthermore, instead of the high-frequency antenna (inductive coupling type), a pair of electrodes (capacitive coupling type), a microwave generation device, and a waveguide (ECR type) may be used.

10, 20, 30, 40, 50 ... plasma processing apparatuses 11, 31, 41, 51 ... processing chambers 12, 42, 52 ... plasma generation chambers 121, 421, 521 ... concave portions 122, 422 ... spaces 13 on both sides of the concave portions, 53 ... Communication hole (slit)
14, 44, 54 ... substrate holders 15, 25, 45, 55 ... high frequency antennas 151, 251 ... matching units 152, 252 ... high frequency power sources 16, 46, 56 ... plasma generation gas introduction parts 17, 47, 57 ... film raw materials Gas introduction part 18, 58 ... Shield 34 ... Film-like substrate holding part 341 ... First roll 342 ... Second roll 43 ... Communication hole (spot shape)
44X ... X stage 44Y ... Y stage FS ... film substrate S ... substrate

Claims (5)

a) a processing chamber;
b) a plasma generation chamber having a communication hole communicating with the processing chamber;
c) plasma generation means for generating plasma in the plasma generation chamber;
d) a substrate-to-be-treated holding means for holding the substrate to be treated so as to face the communication hole provided in the processing chamber;
e) A plasma processing apparatus comprising a substrate to be processed held by the substrate to be processed holding means and a moving means for relatively moving the position of the communication hole.   The plasma processing apparatus according to claim 1, wherein the communication hole is a slit.   3. The plasma processing apparatus according to claim 2, wherein the plasma generation unit includes a high-frequency antenna having an action portion which is formed of a linear wire conductor and is arranged in parallel to the slit. The wall defining the plasma generation chamber has a linear recess recessed inward from the outside of the plasma generation chamber and parallel to the slit;
The plasma processing apparatus according to claim 2, wherein the plasma generation unit includes a high-frequency antenna disposed in the recess.   2. The plasma generating means includes a high frequency antenna, and a shield for shielding a high frequency electromagnetic field is provided between the high frequency antenna and the target substrate holding means and at a position other than the communication hole. The plasma processing apparatus in any one of -4.

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