JP2016082180A - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP2016082180A
JP2016082180A JP2014214964A JP2014214964A JP2016082180A JP 2016082180 A JP2016082180 A JP 2016082180A JP 2014214964 A JP2014214964 A JP 2014214964A JP 2014214964 A JP2014214964 A JP 2014214964A JP 2016082180 A JP2016082180 A JP 2016082180A
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Japan
Prior art keywords
frequency power
plasma
plasma processing
processing apparatus
induction coil
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Pending
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JP2014214964A
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English (en)
Japanese (ja)
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JP2016082180A5 (enrdf_load_stackoverflow
Inventor
ゼ 申
Ze Shen
ゼ 申
哲郎 小野
Tetsuo Ono
哲郎 小野
久夫 安並
Hisao Yasunami
久夫 安並
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Priority to JP2014214964A priority Critical patent/JP2016082180A/ja
Publication of JP2016082180A publication Critical patent/JP2016082180A/ja
Publication of JP2016082180A5 publication Critical patent/JP2016082180A5/ja
Pending legal-status Critical Current

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  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2014214964A 2014-10-22 2014-10-22 プラズマ処理装置 Pending JP2016082180A (ja)

Priority Applications (1)

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JP2014214964A JP2016082180A (ja) 2014-10-22 2014-10-22 プラズマ処理装置

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JP2014214964A JP2016082180A (ja) 2014-10-22 2014-10-22 プラズマ処理装置

Publications (2)

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JP2016082180A true JP2016082180A (ja) 2016-05-16
JP2016082180A5 JP2016082180A5 (enrdf_load_stackoverflow) 2017-08-17

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190100395A (ko) * 2017-01-17 2019-08-28 램 리써치 코포레이션 ICP (Inductively Coupled Plasma) 프로세싱 챔버 내에서 저 바이어스 전압을 사용하여 기판 근방에서 보충 플라즈마 밀도 생성
JP2020161541A (ja) * 2019-03-25 2020-10-01 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
JP2023534801A (ja) * 2020-07-15 2023-08-14 ラム リサーチ コーポレーション プラズマチャンバのｒｆコイルを逆同期でパルシングすること

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005111293A (ja) * 2003-10-02 2005-04-28 Seiko Epson Corp 表面処理装置および表面処理方法
JP2007158373A (ja) * 2007-02-13 2007-06-21 Hitachi High-Technologies Corp プラズマ処理装置
JP2008541367A (ja) * 2005-05-11 2008-11-20 ダブリン シティ ユニバーシティ 位相が不一致である複数の電極を備えるｈｆプラズマ源
JP2012079886A (ja) * 2010-09-30 2012-04-19 Toshiba Corp 基板処理方法および基盤処理装置
JP2012119593A (ja) * 2010-12-03 2012-06-21 Hitachi High-Technologies Corp プラズマ処理装置
JP2012169629A (ja) * 2000-06-30 2012-09-06 Lam Research Corporation 成分送給機構、プラズマリアクタ、及び、半導体基板を処理する方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012169629A (ja) * 2000-06-30 2012-09-06 Lam Research Corporation 成分送給機構、プラズマリアクタ、及び、半導体基板を処理する方法
JP2005111293A (ja) * 2003-10-02 2005-04-28 Seiko Epson Corp 表面処理装置および表面処理方法
JP2008541367A (ja) * 2005-05-11 2008-11-20 ダブリン シティ ユニバーシティ 位相が不一致である複数の電極を備えるｈｆプラズマ源
JP2007158373A (ja) * 2007-02-13 2007-06-21 Hitachi High-Technologies Corp プラズマ処理装置
JP2012079886A (ja) * 2010-09-30 2012-04-19 Toshiba Corp 基板処理方法および基盤処理装置
JP2012119593A (ja) * 2010-12-03 2012-06-21 Hitachi High-Technologies Corp プラズマ処理装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190100395A (ko) * 2017-01-17 2019-08-28 램 리써치 코포레이션 ICP (Inductively Coupled Plasma) 프로세싱 챔버 내에서 저 바이어스 전압을 사용하여 기판 근방에서 보충 플라즈마 밀도 생성
CN110462798A (zh) * 2017-01-17 2019-11-15 朗姆研究公司 在感应耦合等离子体处理室内以低偏压产生近衬底补充等离子体密度
JP2020505722A (ja) * 2017-01-17 2020-02-20 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 誘導結合プラズマ処理チャンバ内における低バイアス電圧での基板近傍補充プラズマ密度生成
KR102552807B1 (ko) * 2017-01-17 2023-07-06 램 리써치 코포레이션 ICP (Inductively Coupled Plasma) 프로세싱 챔버 내에서 저 바이어스 전압을 사용하여 기판 근방에서 보충 플라즈마 밀도 생성
CN110462798B (zh) * 2017-01-17 2024-03-05 朗姆研究公司 在感应耦合等离子体处理室内以低偏压产生近衬底补充等离子体密度
JP2020161541A (ja) * 2019-03-25 2020-10-01 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
CN111739778A (zh) * 2019-03-25 2020-10-02 株式会社国际电气 基板处理装置、半导体器件的制造方法及记录介质、程序
KR20200115145A (ko) * 2019-03-25 2020-10-07 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
KR102370594B1 (ko) * 2019-03-25 2022-03-04 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
CN111739778B (zh) * 2019-03-25 2023-08-22 株式会社国际电气 基板处理装置、半导体器件的制造方法及记录介质、程序
JP2023534801A (ja) * 2020-07-15 2023-08-14 ラム リサーチ コーポレーション プラズマチャンバのｒｆコイルを逆同期でパルシングすること

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