JP2016074961A - Plasma cvd device, shield member, film deposition method, and film-attached member - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma CVD device capable of performing stable film deposition by preventing generation of abnormal discharge during formation of an insulating film.SOLUTION: In a plasma CVD device 10 including a first electrode 1, a second electrode 2 on which a substrate is installed, and a shield member 3 for shielding a part of the surface on the facing side of the first electrode 1 to the second electrode 2, there is a clearance between the first electrode 1 and at least a part of the shield member 3 at a portion where the first electrode 1 is faced to the shield member 3.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a plasma CVD apparatus, a shielding member, a film forming method, and a member with a film.

  As a thin film forming apparatus, a plasma CVD apparatus is known (see, for example, Patent Document 1).

  In general, a plasma CVD apparatus has a vacuum chamber in which electrodes for supplying power are arranged, and a base material (semiconductor wafer, glass substrate, etc.) to be processed is installed in the vacuum chamber, and the vacuum chamber is decompressed. A film is formed on the substrate by introducing a reactive gas into the vacuum chamber, supplying power to the electrode, generating plasma in the vacuum chamber, and depositing a substance on the substrate by a chemical reaction .

  However, in the conventional plasma CVD apparatus, when an insulating film is formed, abnormal discharge occurs, the film formation becomes unstable, the film quality of the formed film is low, or the electrode material is sputtered and foreign matter is formed. There was a problem of causing the occurrence of

JP 2000-91244 A

  An object of the present invention is to provide a plasma CVD apparatus capable of performing stable film formation, to provide a shielding member that can be used for a plasma CVD apparatus capable of performing stable film formation, Another object of the present invention is to provide a film forming method capable of performing typical film formation, and to provide a film-coated member provided with a film having an excellent film quality.

Such an object is achieved by the present invention described below.
The plasma CVD apparatus of the present invention is a plasma CVD apparatus for forming a film on a substrate,
A first electrode;
A second electrode on which the substrate is installed;
A shielding member that shields a part of the surface of the first electrode facing the second electrode;
In the part where the first electrode and the shielding member face each other, the first electrode and at least a part of the shielding member have an interval.

  Thereby, a plasma CVD apparatus capable of performing stable film formation can be provided.

  In the plasma CVD apparatus of the present invention, it is preferable that a space provided between the first electrode and the shielding member has a bent or curved portion.

  Thereby, the penetration | invasion of the carrier gas to a space | interval can be prevented more effectively, and generation | occurrence | production of the plasma of the carrier gas in a space | interval can be prevented still more effectively. As a result, it is possible to more effectively prevent the reaction product of the film forming material from adhering to the surface of the first electrode shielded by the shielding member at intervals.

  In the plasma CVD apparatus of the present invention, the interval is preferably such that the width is smaller than the mean free path λ of the carrier gas under the film forming conditions.

  Thereby, adhesion of the reaction product of the film-forming material on the surface of the first electrode shielded by the shielding member at intervals can be more effectively prevented.

  In the plasma CVD apparatus of the present invention, it is preferable that the first electrode is provided with a through hole for introducing a film forming material between the first electrode and the second electrode.

  Thereby, the film forming material can be efficiently supplied toward the base material installed on the second electrode, the ratio of the film forming material that is not used for film formation can be reduced, and efficient film formation can be performed. It can be carried out.

  In the plasma CVD apparatus of this invention, it is preferable that the said shielding member has a thread part and fixes the said 1st electrode.

  Thereby, since the film can be formed with the first electrode suitably fixed, the stability and reliability of the film quality of the formed film can be made particularly excellent. In addition, since it is not necessary to prepare a fixing member for fixing the first electrode separately, stable film formation can be performed while preventing the configuration of the plasma CVD apparatus from becoming complicated.

  In the plasma CVD apparatus of the present invention, it is preferable that the shielding member has conductivity and is electrically connected to the first electrode.

  Thereby, not only the surface of the first electrode but also the shielding member can directly contribute to plasma generation in the plasma CVD apparatus. Further, not only a part of the surface of the first electrode but also a part of the surface of the shielding member functions as a conductive surface on which the reaction product of the film forming material hardly adheres, so that more stable film formation is performed. be able to.

In the plasma CVD apparatus of the present invention, the area of the first electrode in plan view is S ₀ [mm ² ], and the surface area of the conductive portion in the region where the intrusion of the film forming material is prevented due to the presence of the shielding member. When S ₁ [mm ² ] is set, it is preferable to satisfy a relationship of 0.01 ≦ S ₁ / S ₀ <1.0.

  This makes it possible to perform more stable film formation while preventing an increase in the size of the plasma CVD apparatus and a complicated structure.

The shielding member of the present invention is a shielding member constituting a plasma CVD apparatus for forming a film on a substrate,
The plasma CVD apparatus includes a first electrode and a second electrode on which the substrate is installed,
The shielding member shields a part of the surface of the first electrode facing the second electrode,
The shielding member is used in such a manner that the first electrode and at least a part of the shielding member are spaced from each other at a portion facing the first electrode.

  Thereby, the shielding member which can be used for the plasma CVD apparatus which can perform stable film-forming can be provided.

The film forming method of the present invention is characterized by forming a film using the plasma CVD apparatus of the present invention.
Thereby, the film-forming method which can perform stable film-forming can be provided.

The film-coated member of the present invention comprises a base material,
And a film formed using the plasma CVD apparatus of the present invention.
Thereby, the member with a film | membrane provided with the film | membrane of the outstanding film quality can be provided.

The film-coated member of the present invention comprises a base material,
A film-coated member comprising: a film formed by using the film forming method of the present invention.
Thereby, the member with a film | membrane provided with the film | membrane of the outstanding film quality can be provided.

It is a longitudinal cross-sectional view which shows the outline of suitable embodiment of the plasma CVD apparatus of this invention typically. It is an expanded sectional view showing typically the neighborhood of the 1st electrode and shielding member of the plasma CVD apparatus of the present invention shown in FIG. It is a typical top view of the 1st electrode which comprises the plasma CVD apparatus of this invention shown in FIG. It is sectional drawing which shows typically suitable embodiment of the inkjet head provided with the nozzle plate to which this invention was applied. 1 is a schematic view showing a preferred embodiment of an ink jet recording apparatus to which a film-coated member of the present invention is applied. It is an expanded sectional view for demonstrating the positional relationship of the 1st electrode and the shielding member in the plasma CVD apparatus of other embodiment of this invention.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

<< Plasma CVD equipment >>
First, the plasma CVD apparatus and shielding member of the present invention will be described.

  FIG. 1 is a longitudinal sectional view schematically showing an outline of a preferred embodiment of the plasma CVD apparatus of the present invention, and FIG. 2 shows the vicinity of the first electrode and the shielding member of the plasma CVD apparatus of the present invention shown in FIG. FIG. 3 is a schematic plan view of a first electrode constituting the plasma CVD apparatus of the present invention shown in FIG. 1.

  The plasma CVD apparatus 10 shields a part of the surface of the first electrode 1, the second electrode 2 on which a substrate on which a film is to be formed is installed, and the first electrode 1 on the side facing the second electrode 2. A shielding member 3 to be used, a vacuum chamber (chamber) 5 for housing the first electrode 1, the second electrode 2 and the shielding member 3, an exhaust means 6 for exhausting the inside of the vacuum chamber 5, and a gas to be supplied to the vacuum chamber 5 Gas supply means 7 and a power source 8 are provided.

  The first electrode 1 is electrically connected to a power source (high frequency power source) 8 through a matching circuit (not shown).

  The second electrode 2 is grounded (earthed), and is configured to generate a potential difference with the first electrode 1.

  The vacuum chamber 5 is configured such that the gas is supplied by the gas supply means 7 after the internal air is exhausted by the exhaust means 6.

  As the exhaust means 6, for example, various pumps such as an oil rotary pump, a dry pump, a turbo molecular pump (TMP), and a mechanical booster pump (MBP) can be used.

As the gas supply means 7, for example, a gas cylinder can be used.
The gas includes at least a film forming material, and may further include a carrier gas such as an inert gas (a mixed gas of the film forming material and the carrier gas).

The film forming material varies depending on the composition of the film to be formed. For example, when forming a film composed of silicon nitride, a combination of a Si-containing gas such as SiH ₄ and an N-containing gas such as NH ₃ is used. Can be used. In the case of forming an insulating film (PPSi film) that can be applied to a nozzle plate or the like of a droplet discharge device described later, OMTS (octamethyltrisiloxane) or the like can be used as a film forming material. . As a film forming material, tetraethyl orthosilicate (TEOS) or the like can be preferably used.

  Moreover, as carrier gas, argon, hydrogen, nitrogen etc. can be used suitably, for example.

  In the illustrated configuration, one gas supply means 7 is provided, but a plurality of gas supply means 7 may be provided.

  Thereby, for example, gases having different compositions can be supplied individually. More specifically, when a gas containing a film forming material and a gas not containing a film forming material are separately supplied or a plurality of types of film forming materials are used, a gas containing a first film forming material The gas containing the second film forming material different from the first film forming material can be supplied individually. Thus, by individually supplying a plurality of types of gas, for example, management of a container (such as a gas cylinder) that stores the gas becomes easy. In addition, the mixing ratio of plural kinds of gases can be easily adjusted.

  The shielding member 3 shields a part of the surface (the lower surface in FIG. 2) on the side facing the second electrode 2 of the first electrode 1.

  The first electrode 1 and the shielding member 3 have an interval (first space) 41 in at least a part of the portion where the first electrode 1 and the shielding member 3 face each other.

  Thus, while the shielding member 3 shields the surface of the first electrode 1 and the interval (first space) 41 is provided between the shielding member 3 and the first electrode 1, the first electrode It is possible to prevent the reaction product of the film forming material from adhering to the portion shielded by the one shielding member 3, and to ensure that the conductive surface is exposed. For this reason, the occurrence of abnormal discharge (more specifically, for example, after the insulation of the first electrode 1 due to the adhesion of the reaction product of the film forming material occurs, the dielectric breakdown is caused by applying the voltage in that state. The occurrence of abnormal discharge due to the occurrence) can be effectively prevented / suppressed. As a result, film formation by plasma CVD can be performed stably over a long period of time, and the film quality of the formed film can be improved. In addition, it is possible to reliably prevent the occurrence of harmful effects such as sputtering of the electrode material and inclusion of foreign matter in the formed film. Further, by providing the shielding member 3 in this way, it is possible to secure a region exposed to the outside on the surface of the first electrode 1 and difficult to attach a reaction product of the film forming material. For example, even when a relatively thick film is formed or a film is formed over a long period of time, good film formation can be stably performed. Therefore, for example, even when the frequency of cleaning and maintenance of the plasma CVD apparatus 10 is reduced or the time required for cleaning and maintenance is shortened, suitable film formation can be performed. As a result, the productivity of the film-coated member can be improved. In addition, since it is not necessary to perform excessive cleaning or the like, the life of the plasma CVD apparatus 10 can be extended.

  The width W of the interval 41 provided between the first electrode 1 and the shielding member 3 described above is preferably smaller than the mean free path λ of the carrier gas under the film forming conditions. More preferably, it is 0.5λ or less, and further preferably 0.4λ or less.

  Thereby, since the carrier gas can be more effectively prevented from entering the space (first space) 41, generation of carrier gas plasma in the space (first space) 41 can be prevented. As a result, it is possible to more effectively prevent the reaction product of the film forming material from adhering to the surface of the first electrode 1 that is shielded by the shielding member 3 with the interval 41.

The mean free path λ of the carrier gas can be obtained by the following formula (1).
λ = kT / (2 ^1/2 πpd ² ) (1)
(In the formula (1), k represents Boltzmann's constant, T represents temperature, p represents process pressure, and d represents the diameter of carrier gas molecules.)

  For example, when the carrier gas temperature T is 40 ° C., the carrier gas (argon gas) molecule diameter d is 0.38 nm, and the process pressure p is 4 Pa, the mean free path λ is 1.67 mm.

  In the configuration shown in FIG. 2, the space provided between the first electrode 1 and the shielding member 3 is shielded by the shielding member 3 in addition to the first space (interval) 41 shielded by the shielding member 3. It has the 2nd space 42 which is a space which is not made.

  In the case of having such a second space 42, the width W ′ of the second space 42 is preferably smaller than the average free path λ of the carrier gas under the film forming conditions. , 0.5λ or less is more preferable, and 0.4λ or less is further preferable.

  Thereby, the intrusion of the carrier gas into the second space 42 can be more effectively prevented, and the invasion of the carrier gas into the interval (first space) 41 can be further effectively prevented. Therefore, generation of plasma of the carrier gas in the interval (first space) 41 can be more effectively prevented, and as a result, film formation is performed on the surface of the first electrode 1 that is shielded by the shielding member 3 with the interval 41. The adhesion of the reaction product of the material can be more effectively prevented.

  A space provided between the first electrode 1 and the shielding member 3 has a bent portion 43 that is bent.

  Thereby, intrusion of the carrier gas into the interval (first space) 41 can be further effectively prevented, and generation of carrier gas plasma in the interval (first space) 41 can be further effectively prevented. be able to. As a result, it is possible to more effectively prevent the reaction product of the film forming material from adhering to the surface of the first electrode 1 that is shielded by the shielding member 3 with the interval 41.

  The shielding member 3 is conductive and preferably electrically connected to the first electrode 1 (having the same potential as the first electrode 1).

  Thereby, not only the surface of the first electrode 1 but also the shielding member 3 can directly contribute to the plasma generation in the plasma CVD apparatus 10. Further, not only a part of the surface of the first electrode 1 but also a part of the surface of the shielding member 3 (for example, a part facing the surface of the first electrode through the interval 41) is a reaction product of the film forming material. Therefore, it is possible to more effectively prevent the occurrence of abnormal discharge as described above.

The area of the first electrode 1 when the first electrode 1 is viewed from the side where the second electrode 2 is provided is S ₀ [mm ² ], and the presence of the shielding member 3 prevents the intrusion of the film forming material. The surface area of the conductive part of the region (in FIG. 2, the surface area of the part defining the first space 41 and the second space 42 out of the surfaces of the first electrode 1 and the shielding member 3. Indicated by the thick line part in FIG. The total area of the surface area of the part corresponding to the part is defined as S ₁ [mm ² ], and preferably satisfies the relationship of 0.01 ≦ S ₁ / S ₀ <1.0, and 0.02 ≦ S _It is more preferable to satisfy the relationship of ₁ / S ₀ ≦ 0.3.

  As a result, the effects as described above can be more remarkably exhibited while preventing the plasma CVD apparatus 10 from becoming large and having a complicated structure.

  In this embodiment, the shielding member 3 has a threaded portion (male threaded portion) 31, and is screwed with a threaded portion (female threaded portion) provided on the first electrode 1 and the support portion (power feeding portion) 9. One electrode 1 is fixed to the support portion 9.

  Thereby, since film formation can be performed with the first electrode 1 suitably fixed, the stability and reliability of the film quality of the formed film can be made particularly excellent. In addition, since it is not necessary to prepare a fixing member for fixing the first electrode 1 separately, the above-described effects can be reliably obtained while preventing the configuration of the plasma CVD apparatus 10 from becoming complicated. .

  The first electrode 1 has a plurality of through holes (nozzles) 11 for introducing a film forming material in a space between the first electrode 1 and the second electrode 2.

  Thereby, the film-forming material can be efficiently supplied toward the base material installed on the second electrode 2, and the ratio of the film-forming material that is not used for film formation can be reduced, so that the film can be efficiently formed. It can be performed. Moreover, the unintentional dispersion | variation in the film thickness of the film | membrane formed in a base material can be prevented effectively.

Further, the through holes (nozzles) 11 are provided uniformly over almost the entire surface of the first electrode 1.
Thereby, the effects as described above are more remarkably exhibited.

The shape of the through hole 11 when the first electrode 1 is viewed in plan is not particularly limited, but is preferably circular.
Thereby, supply of gas can be performed more smoothly.

  The diameter of the through hole 11 is preferably from 0.1 mm to 2.0 mm, and more preferably from 0.2 mm to 1.5 mm.

  Thereby, it is possible to supply a sufficient amount (a supply amount per unit time) of the gas while preventing the gas injection pressure from becoming extremely high. As a result, the film formation efficiency (productivity of the film-coated member) can be made particularly excellent, and the occurrence of unintentional film thickness variations can be more effectively prevented.

  The pitch (center-to-center distance) between adjacent through holes 11 is preferably 1.0 mm or more and 22.5 mm or less, and more preferably 1.5 mm or more and 8.0 mm or less.

  Thereby, the gas supplied to each part of the substrate or the surface of the surface of the first electrode 1 (the surface on the side facing the second electrode 2) while sufficiently increasing the area of the part functioning as the conductive portion or Variation in the amount of reaction product of the film forming material can be suppressed. As a result, it is possible to form a film in which generation of unintentional film thickness variation and the like is more effectively prevented with higher productivity.

When the first electrode 1 is viewed in plan from the side where the second electrode 2 is provided, the area of the first electrode 1 is S ₀ [mm ² ], and the total area of the plurality of through holes 11 is S ₂ [mm ² ]. In this case, it is preferable to satisfy the relationship of 0.0007 ≦ S ₂ / S ₀ ≦ 0.02, and it is more preferable to satisfy the relationship of 0.002 ≦ S ₂ / S ₀ ≦ 0.012.

  Thereby, the gas supplied to each part of the substrate or the surface of the surface of the first electrode 1 (the surface on the side facing the second electrode 2) while sufficiently increasing the area of the part functioning as the conductive portion or Variation in the amount of reaction product of the film forming material can be suppressed. As a result, it is possible to form a film in which generation of unintentional film thickness variation and the like is more effectively prevented with higher productivity.

  The first electrode 1 may be made of any material as long as it has conductivity. For example, various metals such as aluminum can be used.

Further, the surface of the first electrode 1 may be subjected to a surface treatment.
Thereby, for example, it is possible to improve the corrosion resistance of the first electrode 1 and to improve the resistance to the sputtering phenomenon.

  When the 1st electrode 1 is mainly comprised with aluminum, an alumite process is employable as said surface treatment. Thereby, the effects as described above can be more remarkably exhibited.

The second electrode 2 usually has an area equal to or larger than the area of the base material on which the film is to be formed.
The shape of the second electrode 2 when viewed in plan is not particularly limited, but is circular in this embodiment.
Thereby, a film-forming process can be more suitably performed on a wafer-like base material or the like.

The second electrode 2 usually has the same shape and size as the first electrode 1.
Thereby, more stable film formation can be performed.

The volume resistivity at 25 ° C. of the film formed using the plasma CVD apparatus of the present invention is preferably 1 × 10 ¹¹ Ω · cm or more, and more preferably 1 × 10 ¹² Ω · cm or more. .

  As described above, if the film to be formed has high insulating properties, stable film formation cannot be performed and the film quality of the formed film is deteriorated. In the invention, even when such a highly insulating film is formed, the occurrence of such a problem can be reliably prevented. That is, when forming a film having such a high insulating property, the effect of this first beauty is more remarkably exhibited.

<< Film Formation Method (Film Production Method) >>
The film forming method of the present invention is characterized by forming a film using the plasma CVD apparatus of the present invention.
Thereby, the film-forming method which can perform stable film-forming can be provided.

  Hereinafter, an example of a method for forming a film using the above-described plasma CVD apparatus 10 will be described.

  In the manufacturing method of the present embodiment, the pressure reducing step (1a) for reducing the pressure inside the vacuum chamber 5 by the exhaust means 6 and the first electrode 1 and the second electrode 2 from the gas supply means 7 through the through holes 11 are performed. A film forming material supply step (1b) for supplying a gas containing a film forming material in between, and a plasma generating step for generating plasma by applying a voltage between the first electrode 1 and the second electrode 2 by the power source 8 (1c).

<Decompression step>
First, prior to supplying gas to the inside of the vacuum chamber 5, the inside of the vacuum chamber 5 is decompressed by the exhaust means 6.

  Thereby, the inside of the vacuum chamber 5 can be efficiently replaced with the gas supplied from the gas supply means 7.

  Although the pressure inside the vacuum chamber 5 in the state decompressed in the pressure reduction process is not particularly limited, it is preferably 0.01 Pa or more and 1 Pa or less, and more preferably 0.1 Pa or more and 0.5 Pa or less.

  Thereby, the inside of the vacuum chamber 5 can be replaced with the gas supplied from the gas supply means 7 more efficiently, and the film formation efficiency (productivity of the member with the film) is particularly excellent. Can do.

  On the other hand, if the pressure inside the vacuum chamber 5 in a state where the pressure is reduced in the pressure reducing step exceeds the upper limit value, the replacement efficiency of the gas inside the vacuum chamber 5 is lowered.

  In addition, if the pressure inside the vacuum chamber 5 in a state where the pressure is reduced in the pressure reducing step is less than the lower limit value, it is difficult not only to further improve the replacement efficiency of the gas inside the vacuum chamber 5, but also the pressure reducing step. Therefore, the film formation efficiency (productivity of the film-coated member) decreases. In addition, excessive decompression increases the load on the exhaust means 6 and the like, which is disadvantageous from the viewpoint of stable operation of the plasma CVD apparatus 10 and longer life.

<Film forming material supply process>
Thereafter, a gas containing a film forming material is supplied into the vacuum chamber 5 in a decompressed state.

  Thereby, the inside of the vacuum chamber 5 can contain each component, such as film-forming material, with a desired content rate. As a result, film formation can be suitably advanced in the subsequent plasma generation step.

  The pressure inside the vacuum chamber 5 in a state where gas is supplied in the film forming material supply step is not particularly limited, but is preferably 0.1 Pa or more and 900 Pa or less, and more preferably 1 Pa or more and 500 Pa or less. .

  Thereby, the film-forming efficiency (productivity of the film-coated member) in the subsequent plasma generation step can be made particularly excellent.

<Plasma generation process>
Thereafter, a voltage is applied between the first electrode 1 and the second electrode 2 by the power source 8.

  As a result, the gas enters a plasma state, and the film forming material is excited and becomes chemically active. Then, the film forming material in a chemically active state chemically reacts to form a film composed of a reaction product of the film forming material on the substrate.

  Here, as described above, since the shielding member 3 satisfying the predetermined condition is installed in the plasma CVD apparatus 10, the reaction of the film forming material is performed on the portion shielded by the shielding member 3 of the first electrode 1. The product is prevented from adhering, and when the film is formed on the base material in this step, it is possible to ensure that the conductive electrode surface is exposed in the first electrode 1 and the like. Therefore, the occurrence of abnormal discharge can be effectively prevented / suppressed, the film formation by plasma CVD can be performed stably over a long period of time, and the film quality of the formed film can be good. it can. In addition, it is possible to reliably prevent the occurrence of harmful effects such as sputtering of the electrode material and inclusion of foreign matter in the formed film.

  In this step, in order to continuously advance the reaction of the film forming material, it is usually performed while supplying gas from the gas supply means 7.

  Thereby, for example, the thickness of the film to be formed can be adjusted by adjusting the film formation time.

  By the way, in the past, when the film formation time was lengthened or when a film having a large thickness was to be formed, the above-described problem due to abnormal discharge was particularly likely to occur. However, in the present invention, the film formation time is increased. In this case, even when a film having a large thickness is formed, it is possible to reliably prevent the above-described problem from occurring and to stably perform a good film formation.

  Although the thickness of the film | membrane formed at this process is not specifically limited, It is preferable that they are 0.1 micrometer or more and 5.0 micrometers or less, and it is more preferable that they are 0.2 micrometer or more and 1.0 micrometer or less.

  As described above, when the film thickness is relatively thick, the above-described problem has occurred more remarkably. However, in the present invention, even when the film thickness is relatively thick as described above, It is possible to reliably prevent the occurrence of a serious problem. Therefore, when the thickness of the film is a value within the above range, the effect of the present invention is more remarkably exhibited. In addition, when the thickness of the film is within the above range, it is possible to prevent the internal stress of the film from becoming too high, and in particular, the adhesion of the film to the base material, the reliability of the film, etc. It can be excellent.

  In order to prevent the pressure inside the vacuum chamber 5 from increasing with the supply of gas from the gas supply means 7 (in order to maintain the degree of vacuum), in this step, the exhaust means 6 may perform exhaust.

  The pressure inside the vacuum chamber 5 in the plasma generation step is not particularly limited, but is preferably 0.1 Pa or more and 900 Pa or less, and more preferably 1 Pa or more and 500 Pa or less.

  Thereby, the efficiency of film formation (productivity of a member with a film) can be made particularly excellent.

《Member with membrane》
Next, the film-coated member of the present invention will be described.

  The member with a film of the present invention comprises a substrate and a film formed using the plasma CVD apparatus described above.

  As described above, the plasma CVD apparatus of the present invention can prevent the film quality from being deteriorated and perform stable film formation. Therefore, the member with a film | membrane provided with the film | membrane of the outstanding film quality can be provided.

  The film | membrane with which a member with a film | membrane is provided can be suitably formed using the film-forming method of this invention mentioned above.

  Note that the base material on which the film is formed using the plasma CVD apparatus and film forming method of the present invention as described above may be used as a member with a film as it is, or the base material on which the film is formed is cut. The material subjected to the above processing may be used as the film-coated member of the present invention.

  In addition, the film included in the film-attached member may include the film formed using the above-described plasma CVD apparatus as it is, or may be subjected to other processing after film formation.

  The film-coated member of the present invention may be used for any application, and can be applied to, for example, a semiconductor device.

  The film-coated member of the present invention can be suitably applied to, for example, a nozzle plate constituting a droplet discharge head (inkjet head) of a droplet discharge device (inkjet recording device). A droplet discharge head (inkjet head) has a fine structure, and a slight dimensional deviation greatly affects the droplet discharge characteristics. In addition, in order to prevent excessive wetting and spreading of ink on the nozzle plate, a droplet repellent head is generally provided with a liquid repellent film. Variation and the like have a great influence on the droplet discharge characteristics. Therefore, when the present invention is applied to a nozzle plate constituting a droplet discharge head (inkjet head), the effects of the present invention are more remarkably exhibited.

<Inkjet head>
Hereinafter, an inkjet head provided with a nozzle plate as an example of the film-coated member of the present invention will be described.

  FIG. 4 is a cross-sectional view schematically showing a preferred embodiment of an inkjet head having a nozzle plate to which the present invention is applied.

  An ink jet head (droplet discharge head) 100 shown in FIG. 4 is formed at a desired position on the vibration plate 82, a silicon substrate 81 on which an ink reservoir 87 is formed, a vibration plate 82 formed on the silicon substrate 81, and the like. The lower electrode 83, the lower electrode 83, the piezoelectric thin film 84 formed at a position corresponding to the ink reservoir 87, the upper electrode 85 formed on the piezoelectric thin film 84, and the lower surface of the silicon substrate 81. And a nozzle plate 86 joined to each other. The nozzle plate 86 is provided with an ink discharge nozzle (through hole) 86 </ b> A communicating with the ink reservoir 87.

  In the inkjet head 100, ink is supplied to the ink reservoir 87 via an ink flow path (not shown). Here, when a voltage is applied to the piezoelectric thin film 84 via the lower electrode 83 and the upper electrode 85, the piezoelectric thin film 84 is deformed to create a negative pressure in the ink reservoir 87 and apply pressure to the ink. With this pressure, ink is ejected from the nozzle, and ink jet recording is performed.

  For example, the inkjet head 100 is formed by integrally forming a thin film piezoelectric element including a lower electrode 83, a piezoelectric thin film 84, and an upper electrode 85 by a thin film process using a Si thermal oxide film as a vibration plate 82, and an upper portion thereof. In addition, a chip made of a single crystal silicon substrate 81 in which a cavity (ink reservoir) 87 is formed and a nozzle plate 86 having an ink discharge nozzle 86A for discharging ink may be joined. it can.

  Here, the piezoelectric thin film 84 is composed of, for example, a three-component PZT in which lead magnesium niobate is added as a third component as a material having a high piezoelectric strain constant d31 so that a larger displacement amount can be obtained. Can be used. The thickness of the piezoelectric thin film 84 can be about 2 μm.

  The nozzle plate 86 includes a base portion 861 and a liquid repellent film 862 that is selectively provided on the outer surface side of the base portion 861 (the surface side opposite to the surface facing the silicon substrate 81).

  The liquid repellent film 862 is a film formed using the plasma CVD apparatus of the present invention as described above, or a film obtained by subjecting the film to a predetermined treatment.

An example of a method for manufacturing such a nozzle plate 86 will be described below.
First, a substrate (base portion 861) made of nickel or the like and provided with an opening corresponding to the ink discharge nozzle (through hole) 86A is prepared, and the film is formed on the substrate using the plasma CVD apparatus of the present invention. Form. At this time, octamethyltrisiloxane is used as a film forming material, and a film composed of the polymer is formed. Thereafter, the formed film is subjected to a warming aging process (annealing process) in a nitrogen atmosphere to form a plasma polymerized film as a liquid repellent film 862 on the surface, thereby obtaining the nozzle plate 86. Can do.

<< Equipment with membrane-coated member (electronic equipment) >>
Next, an apparatus provided with the above-described film-coated member will be described.

  The film-coated member of the present invention may be used for any application as described above, but can be used as a component member of various devices (for example, electronic devices).

  Hereinafter, as an example of an apparatus (electronic apparatus) including a film-coated member, an ink jet recording apparatus (droplet discharge apparatus) including the above-described ink jet head will be described.

  FIG. 5 is a schematic view showing a preferred embodiment of an ink jet recording apparatus to which the film-coated member of the present invention is applied.

  As shown in FIG. 5, an ink jet recording apparatus (droplet discharge apparatus) 1000 includes ink jet head units (recording head units) 91A and 91B, cartridges 92A and 92B, a carriage 93, an apparatus main body 94, and a carriage shaft. 95, a drive motor 96, a timing belt 97, and a platen 98.

  The recording head units 91A and 91B including the ink jet head 100 (including the film-coated member of the present invention) as described above are provided with detachable cartridges 92A and 92B constituting the ink supply means. A carriage 93 on which 91B is mounted is provided on a carriage shaft 95 attached to the apparatus main body 94 so as to be movable in the axial direction. The recording head units 91A and 91B can eject, for example, a black ink composition and a color ink composition, respectively.

  Then, the driving force of the driving motor 96 is transmitted to the carriage 93 via a plurality of gears and a timing belt 97 (not shown), so that the carriage 93 on which the recording head units 91A and 91B are mounted is moved along the carriage shaft 95. The On the other hand, the apparatus main body 94 is provided with a platen 98 along the carriage shaft 95, and a recording sheet S, which is a recording medium such as paper fed by a not-shown paper feed roller, is wound around the platen 98. It is designed to be transported.

  As mentioned above, although preferred embodiment of this invention was described, this invention is not limited to these.

  For example, in the plasma CVD apparatus of the present invention, the configuration of each part can be replaced with any configuration that exhibits the same function, and any configuration can be added. For example, the plasma CVD apparatus may include a heating unit that heats the base material installed on the second electrode. Thereby, the chemical reaction of the film-forming material can be more suitably advanced, and the film formation efficiency (productivity of the film-coated member) can be made particularly excellent.

  In the above-described embodiment, the case where the space provided between the first electrode and the shielding member has a bent portion (bent portion) has been described. The space provided between them may have a curved portion (curved portion) instead of the bent portion. Even in such a case, the same effect as described above can be obtained.

  Note that the space provided between the first electrode and the shielding member may have neither a bent portion nor a curved portion.

  In the above-described embodiment, the shielding member has a male screw portion as the screw portion, the first electrode has the female screw portion, and these are screwed together. However, the shielding member has the female screw portion. The first electrode may have a male screw portion.

  In the above-described embodiment, the case where the shielding member fixes the first electrode by screwing has been described. However, the shielding member may fix the first electrode by other means.

  In the above-described embodiment, the case where the shielding member is in contact with the first electrode has been representatively described. For example, as illustrated in FIG. 6, the shielding member is not in contact with the first electrode. It may be a thing.

DESCRIPTION OF SYMBOLS 10 ... Plasma CVD apparatus 1 ... 1st electrode 11 ... Through-hole (nozzle)
2 ... 2nd electrode 3 ... Shielding member 31 ... Screw part (male screw part)
41 ... Interval (first space)
42 ... second space 43 ... bent part 5 ... vacuum chamber
6 ... Exhaust means 7 ... Gas supply means 8 ... Power supply (high frequency power supply)
9: Supporting part (feeding part)
W ... Width W '... Width 1000 ... Inkjet recording device (droplet ejection device)
100: Inkjet head (droplet ejection head)
DESCRIPTION OF SYMBOLS 81 ... Silicon substrate 82 ... Diaphragm 83 ... Lower electrode 84 ... Piezoelectric thin film 85 ... Upper electrode 86 ... Nozzle plate 86A ... Ink discharge nozzle (through-hole)
861 ... Base 862 ... Liquid repellent film 87 ... Ink reservoir (cavity)
91A ... Inkjet head unit (recording head unit)
91B ... Inkjet head unit (recording head unit)
92A ... cartridge 92B ... cartridge 93 ... carriage 94 ... main body 95 ... carriage shaft 96 ... drive motor 97 ... timing belt 98 ... platen S ... recording sheet

Claims (11)

A plasma CVD apparatus for forming a film on a substrate,
A first electrode;
A second electrode on which the substrate is installed;
A shielding member that shields a part of the surface of the first electrode facing the second electrode;
The plasma CVD apparatus, wherein the first electrode and at least a part of the shielding member are spaced from each other at a portion where the first electrode and the shielding member face each other.   The plasma CVD apparatus according to claim 1, wherein a space provided between the first electrode and the shielding member has a bent or curved portion.   3. The plasma CVD apparatus according to claim 1, wherein the interval has a width smaller than an average free path λ of a carrier gas under film forming conditions.   4. The plasma CVD apparatus according to claim 1, wherein the first electrode is provided with a through hole for introducing a film forming material between the first electrode and the second electrode. 5. .   The plasma CVD apparatus according to any one of claims 1 to 4, wherein the shielding member has a threaded portion and fixes the first electrode.   The plasma CVD apparatus according to any one of claims 1 to 5, wherein the shielding member has conductivity and is electrically connected to the first electrode. The area of the first electrode in plan view was S ₀ [mm ² ], and the surface area of the conductive portion in the region where the film formation material was prevented from entering due to the presence of the shielding member was S ₁ [mm ² ]. The plasma CVD apparatus according to claim 1, wherein a relationship of 0.01 ≦ S ₁ / S ₀ <1.0 is satisfied. A shielding member constituting a plasma CVD apparatus for forming a film on a substrate,
The plasma CVD apparatus includes a first electrode and a second electrode on which the substrate is installed,
The shielding member shields a part of the surface of the first electrode facing the second electrode,
The shielding member is used so that the first electrode and at least a part of the shielding member are spaced apart from each other at a portion facing the first electrode.   A film forming method using the plasma CVD apparatus according to claim 1 to form a film. A substrate;
A film-formed member comprising: a film formed using the plasma CVD apparatus according to claim 1. A substrate;
A film-formed member comprising: a film formed by using the film forming method according to claim 9.

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