JP2016066763A - Method for forming etching mask - Google Patents
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- JP2016066763A JP2016066763A JP2014196083A JP2014196083A JP2016066763A JP 2016066763 A JP2016066763 A JP 2016066763A JP 2014196083 A JP2014196083 A JP 2014196083A JP 2014196083 A JP2014196083 A JP 2014196083A JP 2016066763 A JP2016066763 A JP 2016066763A
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- 238000005530 etching Methods 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 4
- 230000004936 stimulating effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 48
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Abstract
Description
本発明は、エッチングによって板状の被加工物を加工する際の保護部材となるエッチングマスクの形成方法に関する。 The present invention relates to a method for forming an etching mask that serves as a protective member when a plate-like workpiece is processed by etching.
ストリートと呼ばれる分割予定ラインで区画された表面側の複数の領域に、それぞれIC等のデバイスが形成された半導体ウェーハは、例えば、裏面側を研削された後に、各デバイスに対応する複数のチップに分割され、電子機器等に組み込まれる。 For example, a semiconductor wafer in which devices such as ICs are formed in a plurality of areas on the front surface side divided by dividing lines called streets is ground on the back surface, and then is divided into a plurality of chips corresponding to each device. Divided and incorporated into electronic devices.
半導体ウェーハのような板状の被加工物を分割する際には、例えば、高速に回転する切削ブレードを被加工物の分割予定ラインに切り込ませた上で、切削ブレード及び被加工物を分割予定ラインと平行な方向に相対移動させる。しかしながら、この方法では、被加工物を分割予定ラインに沿って機械的に削り取るので、チップの抗折強度が低下しがちである。 When dividing a plate-shaped workpiece such as a semiconductor wafer, for example, a cutting blade rotating at a high speed is cut into a planned dividing line of the workpiece, and then the cutting blade and the workpiece are divided. Move relative to the planned line. However, in this method, since the workpiece is mechanically scraped along the line to be divided, the bending strength of the tip tends to be lowered.
また、この方法では、切削ブレードを分割予定ラインに対して高精度に位置合わせした上で、各分割予定ラインを個別に切削する必要があるので、加工の終了までに長い時間を要してしまう。特に、この問題は、切削すべき分割予定ラインの数が多い被加工物において深刻である。 Further, in this method, since the cutting blade needs to be positioned with high precision with respect to the division line, and each division line needs to be cut individually, it takes a long time to finish the machining. . This problem is particularly serious in a workpiece having a large number of division lines to be cut.
そこで、近年では、プラズマエッチングを利用して被加工物を分割する方法が提案されている(例えば、特許文献1参照)。この方法では、プラズマエッチングでウェーハの全面を一度に加工できるので、チップの小型化、被加工物の大型化等によって加工すべき分割予定ラインの数が増えても、加工に要する時間は殆ど変わらずに済む。 Therefore, in recent years, a method of dividing a workpiece using plasma etching has been proposed (see, for example, Patent Document 1). In this method, the entire surface of the wafer can be processed at once by plasma etching. Therefore, even if the number of division lines to be processed increases due to downsizing of the chip, upsizing of the workpiece, etc., the time required for the processing is almost the same. You do n’t have to.
また、被加工物を機械的に削り取るわけではないないので、加工時の欠け等を抑制し、チップの抗折強度を高く維持できる。なお、この方法では、所望の遮光パターンが形成されたフォトマスクを用いて、被加工物の表面に保護部材となるエッチングマスクを形成している。 Further, since the workpiece is not mechanically scraped off, chipping during processing can be suppressed and the bending strength of the chip can be maintained high. In this method, an etching mask serving as a protective member is formed on the surface of the workpiece using a photomask on which a desired light-shielding pattern is formed.
しかしながら、上述したフォトマスクは、遮光膜の形成、レジスト膜の被覆、レジスト膜のパターン描画、遮光膜のエッチングといった複雑な工程を経て製造され、高価である。また、このフォトマスクを用いて保護部材となるエッチングマスクを形成する際には、被加工物の表面全体をフォトレジスト膜で被覆した後に、このフォトレジスト膜を露光、現像して、被加工物のエッチングすべき領域を露出させる必要がある。 However, the photomask described above is manufactured through complicated processes such as formation of a light shielding film, coating of a resist film, pattern drawing of the resist film, and etching of the light shielding film, and is expensive. Further, when forming an etching mask as a protective member using this photomask, the entire surface of the workpiece is covered with a photoresist film, and then the photoresist film is exposed and developed to form a workpiece. It is necessary to expose the region to be etched.
このように、従来のエッチングマスクの形成方法には、工程が煩雑で、加工コストを十分に低く抑えられないという問題があった。本発明はかかる問題点に鑑みてなされたものであり、その目的とするところは、フォトマスクを用いることなく、従来よりも簡単な工程でエッチングマスクを形成できるエッチングマスクの形成方法を提供することである。 As described above, the conventional method for forming an etching mask has a problem that the process is complicated and the processing cost cannot be sufficiently reduced. The present invention has been made in view of such problems, and an object of the present invention is to provide an etching mask forming method capable of forming an etching mask by a simpler process than before without using a photomask. It is.
本発明によれば、表面にエッチング領域と該エッチング領域で区画された非エッチング領域とを有する被加工物の該非エッチング領域を覆うエッチングマスクの形成方法であって、被加工物の該非エッチング領域を覆う大きさの載置面を有し、該載置面の該非エッチング領域に対応した位置に該非エッチング領域と同じ大きさの凹部が形成された板状の型部材を準備する準備工程と、該型部材の該凹部に外部刺激で硬化するレジスト液を供給して該凹部を該レジスト液で満たすレジスト液供給工程と、該型部材の該載置面と被加工物の表面とを対向させ、該凹部と該非エッチング領域とが対応した状態で被加工物を該型部材に載置し、該凹部を満たした該レジスト液と該非エッチング領域とを接触させる被加工物載置工程と、該型部材に被加工物が載置された状態で該レジスト液に外部刺激を加えて該レジスト液を硬化させ、該非エッチング領域に付着したエッチングマスクを形成するレジスト液硬化工程と、該レジスト液硬化工程の後、表面に該エッチングマスクが形成された被加工物を該型部材から剥離する被加工物剥離工程と、を含むことを特徴とするエッチングマスクの形成方法が提供される。 According to the present invention, there is provided a method of forming an etching mask that covers an unetched region of a workpiece having an etched region and a non-etched region partitioned by the etched region on a surface, the non-etched region of the workpiece being A preparing step of preparing a plate-shaped mold member having a mounting surface of a size to cover and having a recess having the same size as the non-etching region formed at a position corresponding to the non-etching region of the mounting surface; A resist solution supplying step of supplying a resist solution that is cured by an external stimulus to the concave portion of the mold member and filling the concave portion with the resist solution; and the mounting surface of the mold member and the surface of the workpiece are opposed to each other. A workpiece placing step of placing the workpiece on the mold member in a state where the recess and the non-etching region correspond to each other, and bringing the resist solution filling the recess into contact with the non-etching region; Add to material A resist solution curing step in which an external stimulus is applied to the resist solution in a state where an object is placed to cure the resist solution to form an etching mask attached to the non-etched region, and after the resist solution curing step, the surface And a workpiece peeling step for peeling the workpiece on which the etching mask is formed from the mold member. A method for forming an etching mask is provided.
本発明において、熱硬化性の該レジスト液を用い、該外部刺激として熱を加えることが好ましい。 In the present invention, it is preferable to apply heat as the external stimulus using the thermosetting resist solution.
また、本発明において、該凹部の内面は、硬化した該レジスト液の付着を防止する材料でコーティングされていることが好ましい。 In the present invention, the inner surface of the recess is preferably coated with a material that prevents adhesion of the cured resist solution.
本発明に係るエッチングマスクの形成方法は、被加工物の非エッチング領域に対応する凹部が形成された板状の型部材を用い、この凹部をエッチング液で満たしてから被加工物と重ねてエッチング液を硬化させるので、高価なフォトマスクを用いることなく、従来よりも簡単な工程でエッチングマスクを形成できる。 The method for forming an etching mask according to the present invention uses a plate-shaped mold member in which a recess corresponding to a non-etched region of a workpiece is formed, fills the recess with an etching solution, and then overlaps with the workpiece. Since the liquid is cured, an etching mask can be formed by a simpler process than before without using an expensive photomask.
添付図面を参照して、本発明の実施形態について説明する。本実施形態に係るエッチングマスクの形成方法は、準備工程(図2参照)、レジスト液供給工程(図3参照)、被加工物載置工程(図4参照)、レジスト液硬化工程(図5参照)、及び被加工物剥離工程(図6参照)を含む。 Embodiments of the present invention will be described with reference to the accompanying drawings. The etching mask forming method according to the present embodiment includes a preparation step (see FIG. 2), a resist solution supplying step (see FIG. 3), a workpiece placing step (see FIG. 4), and a resist solution curing step (see FIG. 5). ), And a workpiece peeling step (see FIG. 6).
準備工程では、被加工物が載置される載置面側に被加工物の非エッチング領域に対応する凹部を備えた板状の型部材を準備する。レジスト液供給工程では、刺激を加えると硬化するレジスト液で型部材の凹部を満たす。被加工物載置工程では、凹部と非エッチング領域とを対応させた状態で被加工物を型部材に載置し、被エッチング領域に凹部のレジスト液を接触させる。 In the preparation step, a plate-shaped mold member having a recess corresponding to the non-etching region of the workpiece on the mounting surface side on which the workpiece is placed is prepared. In the resist solution supplying step, the concave portion of the mold member is filled with a resist solution that hardens when a stimulus is applied. In the workpiece placing step, the workpiece is placed on the mold member in a state where the concave portion and the non-etched region correspond to each other, and the resist solution in the concave portion is brought into contact with the etched region.
レジスト液硬化工程では、レジスト液に刺激を加えて硬化させ、非エッチング領域を覆うエッチングマスクを形成する。被加工物剥離工程では、被加工物を型部材から剥離する。以下、本実施形態に係るエッチングマスクの形成方法について詳述する。 In the resist solution curing step, the resist solution is cured by applying a stimulus to form an etching mask that covers the non-etched region. In the workpiece peeling step, the workpiece is peeled from the mold member. Hereinafter, a method for forming an etching mask according to the present embodiment will be described in detail.
はじめに、本実施形態でエッチングマスクを形成する被加工物について説明する。図1は、被加工物の構成例を模式的に示す斜視図である。図1に示すように、本実施形態の被加工物11は、例えば、シリコン等の材料でなる円盤状のウェーハであり、表面11aは、格子状に配列された分割予定ライン(ストリート)13で複数の領域に区画されている。 First, a workpiece for forming an etching mask in this embodiment will be described. FIG. 1 is a perspective view schematically showing a configuration example of a workpiece. As shown in FIG. 1, the workpiece 11 of the present embodiment is a disk-shaped wafer made of a material such as silicon, and the surface 11a is divided lines (streets) 13 arranged in a lattice pattern. It is partitioned into multiple areas.
この分割予定ライン13が、エッチングによって加工されるエッチング領域となる。一方、分割予定ライン13で区画された複数の領域は、それぞれ、エッチングで加工されない非エッチング領域となる。各非エッチング領域には、IC等のデバイス15が形成されている。 This division | segmentation scheduled line 13 becomes an etching area | region processed by an etching. On the other hand, the plurality of regions divided by the division lines 13 are non-etched regions that are not processed by etching. A device 15 such as an IC is formed in each non-etched region.
本実施形態に係るエッチングマスクの形成方法では、まず、上述した被加工物11の非エッチング領域に対応する凹部を備えた板状の型部材を準備する準備工程を実施する。図2は、準備工程を説明するための斜視図である。 In the method for forming an etching mask according to the present embodiment, first, a preparatory step of preparing a plate-shaped mold member having a recess corresponding to the non-etched region of the workpiece 11 is performed. FIG. 2 is a perspective view for explaining the preparation process.
図2に示すように、型部材21は、被加工物11と略同径の円盤状に形成されており、上述した全ての非エッチング領域を覆う大きさの載置面(表面)21aを備えている。型部材21の載置面21a側には、各非エッチング領域と同じ大きさ、形状の開口を備えた複数の凹部23が形成されている。 As shown in FIG. 2, the mold member 21 is formed in a disk shape having substantially the same diameter as the workpiece 11, and includes a mounting surface (surface) 21 a having a size covering all the non-etched regions described above. ing. On the mounting surface 21 a side of the mold member 21, a plurality of recesses 23 having openings having the same size and shape as each non-etched region are formed.
各凹部23は、被加工物11の非エッチング領域と対応する位置に形成されている。凹部23の深さは任意だが、例えば、10μm〜20μm程度とすることが好ましい。この型部材21は、例えば、被加工物11と同等のウェーハ、半導体基板、ガラス基板、金属基板、樹脂基板(樹脂フィルム)等をエッチング等の方法で加工して形成される。もちろん、射出成型等の方法で凹部23を備えた型部材21を形成してもよい。 Each recess 23 is formed at a position corresponding to the non-etched region of the workpiece 11. Although the depth of the recessed part 23 is arbitrary, it is preferable to set it as about 10 micrometers-20 micrometers, for example. The mold member 21 is formed, for example, by processing a wafer, a semiconductor substrate, a glass substrate, a metal substrate, a resin substrate (resin film) or the like equivalent to the workpiece 11 by a method such as etching. Of course, you may form the mold member 21 provided with the recessed part 23 by methods, such as injection molding.
また、型部材21の載置面21a側、特に、凹部23の内面には、フッ素系樹脂等の材料をコーティングしておくと良い。これにより、後述するように、レジスト液を硬化させたエッチングマスクの型部材21への付着を防いで、エッチングマスクを型部材21から容易に分離できる。 Moreover, it is preferable to coat a material such as a fluorine-based resin on the mounting surface 21 a side of the mold member 21, particularly on the inner surface of the recess 23. As a result, as will be described later, the etching mask cured with the resist solution is prevented from adhering to the mold member 21, and the etching mask can be easily separated from the mold member 21.
準備工程の後には、型部材21の凹部23をレジスト液で満たすレジスト液供給工程を実施する。図3は、レジスト液供給工程を説明するための斜視図である。レジスト液供給工程は、例えば、図3に示す供給装置2で実施される。供給装置2は、型部材21の凹部23にレジスト液25を供給するノズル4を備えている。 After the preparation step, a resist solution supplying step for filling the concave portion 23 of the mold member 21 with the resist solution is performed. FIG. 3 is a perspective view for explaining the resist solution supplying step. The resist solution supply step is performed by, for example, the supply device 2 shown in FIG. The supply device 2 includes a nozzle 4 that supplies the resist solution 25 to the concave portion 23 of the mold member 21.
レジスト液供給工程では、このノズル4から型部材21の凹部23にレジスト液25を供給する。レジスト液25の供給量は、例えば、レジスト液25の液面が型部材21の載置面21aと略面一になるように制御される。 In the resist solution supply step, the resist solution 25 is supplied from the nozzle 4 to the recess 23 of the mold member 21. The supply amount of the resist solution 25 is controlled, for example, so that the liquid surface of the resist solution 25 is substantially flush with the mounting surface 21 a of the mold member 21.
レジスト液25としては、例えば、後のエッチングに耐性のある熱硬化性の樹脂を用いる。ただし、レジスト液25は、熱以外の刺激(外部刺激)で硬化するものでも良い。例えば、型部材21が光を透過する場合等には、レジスト液25として光硬化性の樹脂を用いることができる。 As the resist solution 25, for example, a thermosetting resin resistant to subsequent etching is used. However, the resist solution 25 may be cured by a stimulus other than heat (external stimulus). For example, when the mold member 21 transmits light, a photocurable resin can be used as the resist solution 25.
レジスト液供給工程の後には、被加工物を型部材に載置する被加工物載置工程を実施する。図4は、被加工物載置工程を説明するための斜視図である。この被加工物載置工程では、まず、上方に露出させた型部材21の載置面21aに被加工物11の表面11aを対面させて、凹部23と非エッチング領域とを対応させる。 After the resist solution supplying step, a workpiece placing step for placing the workpiece on the mold member is performed. FIG. 4 is a perspective view for explaining the workpiece placing step. In this workpiece placement step, first, the surface 11a of the workpiece 11 is made to face the placement surface 21a of the mold member 21 exposed upward, so that the recess 23 and the non-etched region correspond to each other.
次に、この状態で、型部材21の載置面21aと被加工物11の表面11aとを接触させる。上述のように、レジスト液25の液面は型部材21の載置面21aと略面一になっているので、型部材21の載置面21aと被加工物11の表面11aとを接触させれば、凹部23を満たすレジスト液25と非エッチング領域とが接触する。 Next, in this state, the mounting surface 21 a of the mold member 21 and the surface 11 a of the workpiece 11 are brought into contact with each other. As described above, since the liquid level of the resist solution 25 is substantially flush with the mounting surface 21a of the mold member 21, the mounting surface 21a of the mold member 21 and the surface 11a of the workpiece 11 are brought into contact with each other. As a result, the resist solution 25 filling the recess 23 comes into contact with the non-etched region.
被加工物載置工程の後には、レジスト液25を硬化させて非エッチング領域を覆うエッチングマスクを形成するレジスト液硬化工程を実施する。図5は、レジスト液硬化工程を説明するための斜視図である。レジスト液硬化工程は、例えば、図5に示すベーク装置6で実施される。 After the workpiece placing step, a resist solution curing step is performed in which the resist solution 25 is cured to form an etching mask that covers the non-etched region. FIG. 5 is a perspective view for explaining the resist solution curing step. The resist solution curing step is performed by, for example, the baking apparatus 6 shown in FIG.
ベーク装置6の内部には、被加工物11及び型部材21を載置するホットプレート8が配置されている。レジスト液硬化工程では、まず、被加工物11と重ねた型部材21をホットプレート8に載置する。具体的には、型部材21の裏面21aをホットプレート8の上面に当接させて、被加工物11の裏面11b側を上方に位置付ける。 A hot plate 8 on which the workpiece 11 and the mold member 21 are placed is disposed inside the bake device 6. In the resist solution curing step, first, the mold member 21 overlapped with the workpiece 11 is placed on the hot plate 8. Specifically, the back surface 21a of the mold member 21 is brought into contact with the upper surface of the hot plate 8, and the back surface 11b side of the workpiece 11 is positioned upward.
次に、ホットプレート8の温度を上昇させて、型部材21を加熱する。これにより、型部材21の凹部23を満たすレジスト液25は、被加工物11の非エッチング領域に接触した状態で硬化し、エッチングマスク27(図6参照)が形成される。なお、加熱の温度は、レジスト液25を適切に硬化できる範囲で設定される。 Next, the mold member 21 is heated by raising the temperature of the hot plate 8. As a result, the resist solution 25 filling the recess 23 of the mold member 21 is cured while being in contact with the non-etched region of the workpiece 11, thereby forming an etching mask 27 (see FIG. 6). The heating temperature is set within a range where the resist solution 25 can be appropriately cured.
レジスト液硬化工程の後には、被加工物11を型部材21から剥離する被加工物剥離工程を実施する。図6は、被加工物剥離工程を説明するための斜視図である。この被加工物剥離工程では、被加工物11と型部材21とを界面(表面11a及び載置面21a)で分離する。これにより、被加工物11の表面11aには、非エッチング領域を覆うエッチングマスク27が残存する。 After the resist solution curing step, a workpiece peeling step for peeling the workpiece 11 from the mold member 21 is performed. FIG. 6 is a perspective view for explaining the workpiece peeling step. In this workpiece peeling process, the workpiece 11 and the mold member 21 are separated at the interface (surface 11a and placement surface 21a). As a result, the etching mask 27 that covers the non-etching region remains on the surface 11 a of the workpiece 11.
このエッチングマスク27をエッチング時の保護部材として用いることで、表面11aのエッチング領域を適切に加工して被加工物11を各デバイス15に対応する複数のチップへと分割できる。なお、本実施形態では、型部材21の載置面21a側、特に、凹部23の内面を、フッ素系樹脂等の材料でコーティングしているので、エッチングマスク27の型部材21側への残存を防止できる。 By using this etching mask 27 as a protective member at the time of etching, the etching region of the surface 11a can be appropriately processed to divide the workpiece 11 into a plurality of chips corresponding to each device 15. In the present embodiment, since the mounting surface 21a side of the mold member 21, particularly the inner surface of the recess 23, is coated with a material such as a fluororesin, the etching mask 27 remains on the mold member 21 side. Can be prevented.
以上のように、本実施形態に係るエッチングマスクの形成方法は、被加工物11の非エッチング領域に対応する凹部23が形成された板状の型部材21を用い、この凹部23をエッチング液25で満たしてから被加工物11と重ねてエッチング液25を硬化させるので、高価なフォトマスクを用いることなく、従来よりも簡単な工程でエッチングマスク27を形成できる。 As described above, the etching mask forming method according to the present embodiment uses the plate-shaped mold member 21 in which the concave portion 23 corresponding to the non-etched region of the workpiece 11 is formed, and the concave portion 23 is formed into the etching solution 25. Then, the etching liquid 25 is cured by overlapping with the workpiece 11, so that the etching mask 27 can be formed by a simpler process than the conventional one without using an expensive photomask.
なお、本発明は上記実施形態の記載に限定されず、種々変更して実施可能である。例えば、上記実施形態では、レジスト液硬化工程において、熱硬化性のレジスト液25を加熱しているが、本発明のレジスト液硬化工程はこれに限定されない。光硬化性のレジスト液を用いる場合には、光を照射してレジスト液を硬化させればよい。 In addition, this invention is not limited to description of the said embodiment, A various change can be implemented. For example, in the above embodiment, the thermosetting resist solution 25 is heated in the resist solution curing step, but the resist solution curing step of the present invention is not limited to this. In the case of using a photocurable resist solution, the resist solution may be cured by irradiating light.
その他、上記実施形態に係る構成、方法等は、本発明の目的の範囲を逸脱しない限りにおいて適宜変更して実施できる。 In addition, the configurations, methods, and the like according to the above-described embodiments can be appropriately modified and implemented without departing from the scope of the object of the present invention.
11 被加工物
11a 表面
11b 裏面
13 分割予定ライン(ストリート)
15 デバイス
21 型部材
21a 載置面(表面)
21b 裏面
23 凹部
25 レジスト液
27 エッチングマスク
2 供給装置
4 ノズル
6 ベーク装置
8 ホットプレート
11 Workpiece 11a Front surface 11b Back surface 13 Scheduled line (street)
15 Device 21 Mold member 21a Mounting surface (surface)
21b Back surface 23 Concave portion 25 Resist liquid 27 Etching mask 2 Supply device 4 Nozzle 6 Bake device 8 Hot plate
Claims (3)
被加工物の該非エッチング領域を覆う大きさの載置面を有し、該載置面の該非エッチング領域に対応した位置に該非エッチング領域と同じ大きさの凹部が形成された板状の型部材を準備する準備工程と、
該型部材の該凹部に外部刺激で硬化するレジスト液を供給して該凹部を該レジスト液で満たすレジスト液供給工程と、
該型部材の該載置面と被加工物の表面とを対向させ、該凹部と該非エッチング領域とが対応した状態で被加工物を該型部材に載置し、該凹部を満たした該レジスト液と該非エッチング領域とを接触させる被加工物載置工程と、
該型部材に被加工物が載置された状態で該レジスト液に外部刺激を加えて該レジスト液を硬化させ、該非エッチング領域に付着したエッチングマスクを形成するレジスト液硬化工程と、
該レジスト液硬化工程の後、表面に該エッチングマスクが形成された被加工物を該型部材から剥離する被加工物剥離工程と、を含むことを特徴とするエッチングマスクの形成方法。 A method of forming an etching mask that covers an unetched region of a workpiece having an etched region and a non-etched region partitioned by the etched region on a surface,
A plate-shaped mold member having a mounting surface of a size that covers the non-etching region of the workpiece, and having a recess having the same size as the non-etching region formed at a position corresponding to the non-etching region of the mounting surface A preparation process to prepare,
A resist solution supplying step of supplying a resist solution that is cured by an external stimulus to the recess of the mold member to fill the recess with the resist solution;
The resist in which the mounting surface of the mold member and the surface of the workpiece are opposed to each other, the workpiece is placed on the mold member in a state where the concave portion and the non-etched region correspond to each other, and the concave portion is filled A workpiece placing step for bringing the liquid into contact with the non-etched region;
A resist solution curing step in which an external stimulus is applied to the resist solution in a state where a workpiece is placed on the mold member to cure the resist solution, and an etching mask attached to the non-etched region is formed;
A method for forming an etching mask, comprising: a step of peeling off a workpiece having the etching mask formed on the surface thereof from the mold member after the resist solution curing step.
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JP2004212985A (en) * | 2002-12-27 | 2004-07-29 | Lg Phillips Lcd Co Ltd | Method for forming pattern of liquid crystal display element |
JP2010251349A (en) * | 2009-04-10 | 2010-11-04 | Panasonic Corp | Method for processing substrate, method for producing semiconductor chip, and method for producing semiconductor chip with resin adhesive layer |
JP2011222732A (en) * | 2010-04-09 | 2011-11-04 | Fujifilm Corp | Pattern formation method and patterned substrate manufacturing method |
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JPH01105343A (en) * | 1987-10-19 | 1989-04-21 | Seiko Epson Corp | Production of optical disk substrate |
JP2004212985A (en) * | 2002-12-27 | 2004-07-29 | Lg Phillips Lcd Co Ltd | Method for forming pattern of liquid crystal display element |
JP2010251349A (en) * | 2009-04-10 | 2010-11-04 | Panasonic Corp | Method for processing substrate, method for producing semiconductor chip, and method for producing semiconductor chip with resin adhesive layer |
JP2011222732A (en) * | 2010-04-09 | 2011-11-04 | Fujifilm Corp | Pattern formation method and patterned substrate manufacturing method |
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