JP2016063131A5 - - Google Patents
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- JP2016063131A5 JP2016063131A5 JP2014191306A JP2014191306A JP2016063131A5 JP 2016063131 A5 JP2016063131 A5 JP 2016063131A5 JP 2014191306 A JP2014191306 A JP 2014191306A JP 2014191306 A JP2014191306 A JP 2014191306A JP 2016063131 A5 JP2016063131 A5 JP 2016063131A5
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- JP
- Japan
- Prior art keywords
- power source
- processing apparatus
- plasma processing
- frequency power
- magnetic field
- Prior art date
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- 230000035699 permeability Effects 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
Claims (6)
前記磁場生成手段は、前記磁場を形成するコイルと前記コイルにより形成された磁場における前記処理室外への漏洩を防止し前記コイルが内部に配置された円筒形状のコイルケースを具備し、
前記第一の高周波電源と前記第二の高周波電源と前記直流電源と前記整合器は、前記コイルケースの上方に配置されていることを特徴とするプラズマ処理装置。 A processing chamber in which the sample is a plasma treatment, through an oscillator for generating microwaves, a and one high frequency power source for supplying power before Symbol microwave into the processing chamber through a waveguide, a matching unit RF a second high-frequency power source for supplying the sample stage that will be placed on the power the specimen, a DC power supply for applying a DC voltage for electrostatically adsorbing the sample to the sample stage to the sample stage, said processing chamber In a plasma processing apparatus comprising a magnetic field generating means for forming a magnetic field
It said magnetic field generating means comprises a coil case of the leakage model cylindrical preventing the coil is disposed in the interior of the said processing outside the magnetic field formed by the coil and the coil forming the magnetic field,
The plasma processing apparatus, wherein the first high-frequency power source, the second high-frequency power source, the DC power source, and the matching unit are disposed above the coil case.
平面図における前記第一の高周波電源と前記第二の高周波電源と前記直流電源と前記整合器のそれぞれの長手方向が前記平面図における前記導波管の長手方向と平行となるように前記第一の高周波電源と前記第二の高周波電源と前記直流電源と前記整合器のそれぞれが配置されていることを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 1,
Wherein as each of the longitudinal direction of the matching circuit and the first high-frequency power source the and second high-frequency power source and the DC power source in a plan view is parallel to the longitudinal direction of the waveguide in the planar view first Each of the high frequency power source, the second high frequency power source, the direct current power source, and the matching unit is disposed.
前記第一の高周波電源と前記導波管との間に配置され磁場を遮蔽する遮蔽板をさらに備え、
前記第一の高周波電源は、前記第二の高周波電源と前記直流電源と前記整合器の各々より前記導波管の近くに配置されていることを特徴とするプラズマ処理装置。 In the plasma processing apparatus according to claim 1 or 2,
A shielding plate disposed between the first high-frequency power source and the waveguide to shield a magnetic field;
Said first high frequency power source, a plasma processing apparatus characterized by from each of said matching circuit and said second high-frequency power source and the DC power supply is disposed near the waveguide.
前記遮蔽板は、平板であって、
前記遮蔽板の材質は、鉄であることを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 3, wherein
The shielding plate, I flat der,
The plasma processing apparatus , wherein the shielding plate is made of iron.
前記遮蔽板の比透磁率は、２５０ないし５０００の範囲内の値であることを特徴とするプラズマ処理装置。 The plasma processing apparatus according to claim 3, wherein
The plasma processing apparatus according to claim 1, wherein a relative permeability of the shielding plate is a value in a range of 250 to 5000.
前記試料は、直径がφ４５０ｍｍ以上のウエハであることを特徴とするプラズマ処理装置。 In the plasma processing apparatus according to any one of claims 1 to 5,
The plasma processing apparatus, wherein the sample is a wafer having a diameter of 450 mm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014191306A JP6351458B2 (en) | 2014-09-19 | 2014-09-19 | Plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014191306A JP6351458B2 (en) | 2014-09-19 | 2014-09-19 | Plasma processing equipment |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016063131A JP2016063131A (en) | 2016-04-25 |
| JP2016063131A5 true JP2016063131A5 (en) | 2017-02-09 |
| JP6351458B2 JP6351458B2 (en) | 2018-07-04 |
Family
ID=55796219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014191306A Active JP6351458B2 (en) | 2014-09-19 | 2014-09-19 | Plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6351458B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2913131B2 (en) * | 1991-08-12 | 1999-06-28 | 東京エレクトロン株式会社 | Microwave plasma device |
| JP3121669B2 (en) * | 1992-03-31 | 2001-01-09 | 株式会社東芝 | Microwave plasma generator |
| JP4224374B2 (en) * | 2002-12-18 | 2009-02-12 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus processing method and plasma processing method |
| JP2005079603A (en) * | 2004-09-29 | 2005-03-24 | Hitachi Ltd | Plasma processing device |
-
2014
- 2014-09-19 JP JP2014191306A patent/JP6351458B2/en active Active
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