JP2015022855A5

JP2015022855A5 -

Info

Publication number: JP2015022855A5
Application number: JP2013149027A
Authority: JP
Filing date: 2013-07-18
Publication date: 2016-04-14
Anticipated expiration: 2033-07-18

Description

本発明は、試料がプラズマ処理され金属製のプラズマ処理室と、前記プラズマ処理室の上方を気密に封止する誘電体の誘電体窓と、前記誘電体窓の上方に配置され誘導磁場を発生させる誘導アンテナと、前記誘導アンテナに高周波電力を供給する高周波電源とを備えるプラズマ処理装置において、前記プラズマ処理室内にプラズマが生成された場合、誘導体窓の面内の温度差を低減させる温度差低減機構をさらに備えることを特徴とする。
The present invention generates a sample plasma treated metallic plasma processing chamber, a dielectric window of a dielectric for sealing the upper part of the plasma processing chamber airtight, the induced magnetic field is arranged above the dielectric window an inductive antenna which, in the plasma processing apparatus and a high frequency power supply for supplying high frequency power to the induction antenna, if the plasma in the plasma processing chamber has been generated, the temperature difference causing reduced temperature difference in the plane of the derivative windows reduction It further has a mechanism.

Claims

And the sample plasma treated metallic plasma processing chamber, a dielectric window of a dielectric for sealing the upper part of the plasma processing chamber airtight, and inductive antenna which is arranged above the dielectric window to generate an induced magnetic field In a plasma processing apparatus comprising a high frequency power source for supplying high frequency power to the induction antenna,
If plasma in the plasma processing chamber is generated, the plasma processing apparatus further comprising a temperature difference reducing mechanism makes reducing the temperature difference in the plane of the derivatives window.

The plasma processing apparatus according to claim 1,
The plasma processing apparatus, wherein the temperature difference reducing mechanism includes a heating mechanism that heats a temperature of an outer peripheral portion of the derivative window.

The plasma processing apparatus according to claim 1,
The plasma processing apparatus, wherein the temperature difference reducing mechanism includes a cooling mechanism that cools a temperature of a central portion of the derivative window.

The plasma processing apparatus according to claim 2, wherein
The plasma processing apparatus, wherein the temperature difference reducing mechanism includes a cooling mechanism that cools a temperature of a central portion of the derivative window.

The plasma processing apparatus according to claim 2, wherein
The heating mechanism is a ring-shaped conductor,
The plasma processing apparatus, wherein the conductor is disposed above an outer periphery of the dielectric window and is in an electrically floating state.

The plasma processing apparatus according to claim 2, wherein
The heating mechanism is a heater disposed above the outer periphery of the dielectric window,
A power source for heating the heater, and a control device for controlling the power source;
The control device, wherein if the high-frequency power is started supplying the high frequency power, plasma treatment the temperature difference within the surface of the dielectric window and wherein the controller controls the power supply to a predetermined temperature difference apparatus.

The plasma processing apparatus according to claim 5, wherein
A Faraday shield capacitively coupled to the plasma and disposed above the dielectric window;
The plasma processing apparatus, wherein the conductor is an alloy of nickel and chromium and is disposed outside the Faraday shield.

The plasma processing apparatus according to claim 4, wherein
A control device for controlling the cooling mechanism;
Wherein the control device, when the high frequency power source has started the supply of the high frequency power, plasma temperature difference within the surface of the dielectric window and wherein the controller controls the cooling mechanism to a predetermined temperature difference Processing equipment.