JP2016057255A - Infrared detector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an infrared detector that has a sensitivity not easily lowered by temperature change.SOLUTION: An infrared detector 1 includes a pyroelectric element 2 and a processing circuit 10 detecting a detection object based on output of the pyroelectric element 2. The processing circuit 10 has a conversion circuit 3 and an integrated circuit 100 with an amplification circuit 4. The conversion circuit 3 converts a current signal output from the pyroelectric element 2 to a voltage signal. The amplification circuit 4 amplifies the voltage signal output from the conversion circuit 3. The integrated circuit 100 has a temperature measuring unit 8 and a control unit 9, the temperature measuring unit 8 measuring temperatures of regions around the integrated circuit 100 and the control unit 9 changing the sensitivity of the processing circuit 10 according to the measured value of the temperature measuring unit 8.SELECTED DRAWING: Figure 1

Description

  The present invention generally relates to an infrared detection device, and more particularly to an infrared detection device using a pyroelectric element.

  Conventionally, a pyroelectric element, a conversion circuit that converts a current signal from the pyroelectric element into a voltage signal (current / voltage), and a predetermined frequency component of the voltage signal converted by the conversion circuit are selectively amplified (voltage). An infrared detection device including an amplifier circuit is known (see, for example, Patent Document 1).

  The infrared detection device described in Patent Document 1 constitutes a human body detection device that detects whether there is a person in the detection area by detecting infrared rays emitted by a moving human body in the detection area. The infrared detection device compares the voltage signal amplified by the amplification circuit with a predetermined threshold voltage by a detection circuit, and outputs a human body detection signal based on the comparison result.

JP 2005-147855 A

  By the way, the infrared detecting device having the above-described configuration has a low sensitivity because the temperature difference between the human body and the background is smaller in an environment where the temperature is high such as in summer than in an environment where the temperature is low such as in winter. there is a possibility.

  The present invention has been made in view of the above-described reasons, and an object thereof is to provide an infrared detection device in which the sensitivity is not easily lowered even when the temperature changes.

  The infrared detection apparatus of the present invention includes a pyroelectric element and a processing circuit that detects a detection target based on an output of the pyroelectric element, and the processing circuit outputs a current signal output from the pyroelectric element as a voltage. A conversion circuit that converts the signal into a signal; and an amplification circuit that amplifies the voltage signal output from the conversion circuit. The integrated circuit includes a temperature that measures a temperature around the integrated circuit. A measurement unit and a control unit that changes the sensitivity of the processing circuit in accordance with the measurement value of the temperature measurement unit are provided.

  The present invention has an advantage that the sensitivity is hardly lowered even when the temperature changes.

1 is a block diagram illustrating a schematic configuration of an infrared detection device according to Embodiment 1. FIG. 1 is a circuit diagram illustrating a schematic configuration of an infrared detection device according to Embodiment 1. FIG. It is a temperature characteristic figure of the resistance for measurement used for the infrared detecting device concerning Embodiment 1. It is explanatory drawing of operation | movement of the infrared detection apparatus which concerns on Embodiment 1. FIG. FIG. 5 is a circuit diagram illustrating a schematic configuration of an infrared detection device according to a second embodiment. It is a frequency characteristic figure of the amplifier circuit used for the infrared rays detection apparatus concerning Embodiment 2.

(Embodiment 1)
As shown in FIG. 1, the infrared detection device 1 of the present embodiment includes a pyroelectric element 2 and a processing circuit 10 that detects a detection target based on the output of the pyroelectric element 2.

  The processing circuit 10 includes an integrated circuit 100 including a conversion circuit 3 and an amplifier circuit 4. The conversion circuit 3 converts the current signal output from the pyroelectric element 2 into a voltage signal. The amplifier circuit 4 amplifies the voltage signal output from the conversion circuit 3.

  Here, the integrated circuit 100 is provided with a temperature measurement unit 8 and a control unit 9. The temperature measurement unit 8 measures the temperature around the integrated circuit 100. The control unit 9 is configured to change the sensitivity of the processing circuit 10 according to the measurement value of the temperature measurement unit 8.

  According to this configuration, since the conversion circuit 3 and the amplifier circuit 4 are included in an integrated circuit (IC: Integrated Circuit) 100, the circuit portion of the infrared detection device 1 can be made into one chip. In addition, the integrated circuit 100 includes a temperature measurement unit 8 that measures the ambient temperature of the integrated circuit 100 and a control unit 9 that changes the sensitivity of the processing circuit 10 according to the measurement value of the temperature measurement unit 8. Yes. Therefore, the infrared detection apparatus 1 can change the sensitivity of the processing circuit 10 according to the temperature of the integrated circuit 100 without adding any external component to the integrated circuit 100.

  As a result, the infrared detection device 1 is sufficient even in an environment where the temperature difference between the human body and the background is small, such as in summer, by increasing the sensitivity of the processing circuit 10 as the temperature of the integrated circuit 100 increases. The detection target (human body) can be detected with sensitivity. Therefore, the infrared detecting device 1 has an advantage that the sensitivity is hardly lowered even when the temperature changes.

  Hereinafter, the infrared detection device 1 of the present embodiment will be described in detail. However, the infrared detection apparatus 1 described below is merely an example of the present invention, and the present invention is not limited to the following embodiment, and the technical invention according to the present invention is not limited to this embodiment. Various modifications can be made according to the design or the like as long as they do not depart from the idea.

  In the present embodiment, the infrared detection device 1 is used as an example for human body detection that detects the presence or absence of a person (detection target) in a detection area. The infrared detection device 1 is configured to determine the presence / absence of a person in the detection area based on a change in the amount of infrared light received by the pyroelectric element 2 and output the determination result to an external device (external circuit). . However, the infrared detection device 1 is not limited to human body detection, and may be used for other purposes such as gas detection.

  As shown in FIG. 1, the infrared detection device 1 according to the present embodiment includes an AD conversion circuit 5 and a pyroelectric element 2, a conversion circuit 3, an amplification circuit 4, a temperature measurement unit 8, and a control unit 9. A digital circuit 6 is further provided. Here, the AD conversion circuit 5 and the digital circuit 6 are realized by, for example, a microcomputer (microcomputer) having a memory and a processor as a main configuration, and the processor executing a program stored in the memory. Programs for causing the microcomputer to function as the AD conversion circuit 5 and the digital circuit 6 may be written in a memory in advance, stored in a recording medium, or provided via an electric communication line, for example.

  The AD conversion circuit 5 and the digital circuit 6 are included in the integrated circuit 100 in the processing circuit 10. That is, in the present embodiment, the processing circuit 10 includes the integrated circuit 100 including the conversion circuit 3, the amplification circuit 4, the AD conversion circuit 5, the digital circuit 6, the temperature measurement unit 8, and the control unit 9. I have. The processing circuit 10 has a function of detecting a detection target based on the output of the pyroelectric element 2.

  The pyroelectric element 2 receives infrared rays from the detection area and outputs a current signal according to a change in the amount of received infrared rays. The current signal output from the pyroelectric element 2 is input to the conversion circuit 3 that performs current-voltage conversion (IV conversion).

  As shown in FIG. 2, the conversion circuit 3 includes a (first) operational amplifier 31 and a capacitor 32.

  The inverting input terminal (−input terminal) of the operational amplifier 31 is electrically connected to the pyroelectric element 2. The non-inverting input terminal (+ input terminal) of the operational amplifier 31 is electrically connected to a reference power source 33 that generates a reference voltage. The capacitor 32 is electrically connected between the output terminal and the inverting input terminal of the operational amplifier 31 and functions as a capacitive element for AC feedback.

  The capacitive conversion circuit 3 configured in this manner converts the current signal from the pyroelectric element 2 into a voltage signal using the impedance of the capacitor 32 and outputs the voltage signal from the output terminal of the operational amplifier 31. The voltage output from the output terminal of the operational amplifier 31 is a value obtained by subtracting the voltage across the capacitor 32 from the reference voltage generated by the reference power supply 33. Therefore, the output of the conversion circuit 3 is a voltage signal that changes from the operating point in response to a change in the current signal caused by the pyroelectric element 2 receiving infrared rays with the reference voltage as the operating point. The conversion circuit 3 configured as described above has an advantage that the SN ratio is relatively high.

  In the following description, for simplicity of explanation, the output of the conversion circuit 3 at the operating point (reference voltage) is assumed to be zero. That is, the output of the conversion circuit 3 means the amount of change from the operating point of the voltage output from the output terminal of the operational amplifier 31.

  In the example of FIG. 2, the conversion circuit 3 further includes a feedback circuit including a (second) operational amplifier 34, a capacitor 35, two resistors 36 and 37, and a clamp circuit 38. .

  In the operational amplifier 34, an inverting input terminal (−input terminal) is electrically connected to the reference power source 33 via a resistor 36, and a capacitor 35 is electrically connected between the output terminal and the inverting input terminal. Thus, an integration circuit is configured. Further, the non-inverting input terminal (+ input terminal) of the operational amplifier 34 is connected to the output terminal of the operational amplifier 31, and the output terminal of the operational amplifier 34 is connected to the inverting input terminal of the operational amplifier 31 via the resistor 37. .

  The clamp circuit 38 is electrically connected in parallel with the resistor 37 between the output terminal of the operational amplifier 34 and the inverting input terminal of the operational amplifier 31. Here, the clamp circuit 38 includes a pair of diodes 381 and 382 connected in antiparallel to each other. That is, the diode 381 and the diode 382 are connected in parallel so as to be opposite to each other between both ends of the resistor 37. Here, the anode of the diode 381 is connected to the output terminal of the operational amplifier 34, and the anode of the diode 382 is connected to the inverting input terminal of the operational amplifier 31.

  As a result, the conversion circuit 3 outputs a voltage signal in which unnecessary low-frequency components (hereinafter referred to as “unnecessary components”) having a predetermined frequency or less are reduced by the feedback circuit. In other words, the conversion circuit 3 has a high-pass filter. The unnecessary component is a low-frequency fluctuation component that occurs regardless of the detection target (human body) due to, for example, a change in ambient temperature of the infrared detection device 1 with respect to the current signal output from the pyroelectric element 2. .

  Furthermore, when an unnecessary component exceeding, for example, a predetermined value is input to the conversion circuit 3 and the voltage across the resistor 37 exceeds the forward voltage of the diode 381 or the diode 382, the voltage across the resistor 37 is clamped between the clamp circuit 38. Are short-circuited. Therefore, even when an unnecessary component exceeding a predetermined value is input, the conversion circuit 3 can output a voltage signal in which the unnecessary component is reduced.

  The amplifier circuit 4 includes a (third) operational amplifier 41, a feedback capacitive element (hereinafter referred to as “feedback capacitor”) 42, a limiter circuit 43, a resistor 44, and an input capacitor 45. .

  The inverting input terminal (−input terminal) of the operational amplifier 41 is electrically connected to the output terminal of the operational amplifier 31 via the input capacitor 45. The feedback capacitor 42 is electrically connected between the output terminal and the inverting input terminal of the operational amplifier 41. Further, the non-inverting input terminal (+ input terminal) of the operational amplifier 41 is electrically connected to the reference power source 33. That is, the non-inverting input terminal of the operational amplifier 41 is connected to the reference power supply 33 common to the non-inverting input terminal of the operational amplifier 31 in the conversion circuit 3.

  In short, the amplifier circuit 4 constitutes a capacitive voltage amplifier circuit, and the voltage amplification factor thereof is “C1” using the capacitance value “C1” of the input capacitor 45 and the capacitance value “C2” of the feedback capacitor 42. / C2 ". Therefore, the amplifier circuit 4 amplifies the voltage signal input from the conversion circuit 3 by C1 / C2 times and outputs it from the output terminal of the operational amplifier 41. The amplifier circuit 4 configured as described above has lower power consumption than a voltage amplifier circuit configured by combining an operational amplifier and a resistor. The output terminal of the operational amplifier 41 is electrically connected to the AD conversion circuit 5.

  The resistor 44 is electrically connected in parallel with the feedback capacitor 42 between the output terminal and the inverting input terminal of the operational amplifier 41. That is, the amplifier circuit 4 has a resistor 44 that is electrically connected in parallel with the feedback capacitor 42 and the limiter circuit 43 between the input terminal (inverting input terminal) and the output terminal (output terminal) of the operational amplifier 41. doing. The resistor 44 is provided to stabilize the operation of the amplifier circuit 4. That is, while the capacitive amplifier circuit 4 has low power consumption, the feedback capacitor 42 and the input capacitor 45 have high impedance for low-frequency components, and can operate unstablely without the resistor 44. There is sex. Therefore, the infrared detection device 1 of the present embodiment stabilizes the operation of the amplifier circuit 4 by providing the resistor 44 and providing the amplifier circuit 4 with a time constant.

  In the present embodiment, the infrared detection device 1 integrates the elements constituting the conversion circuit 3 and the amplification circuit 4 into one IC (integrated circuit), thereby converting the conversion circuit 3 and the amplification circuit 4 and further AD. The conversion circuit 5 and the digital circuit 6 are made into one chip. Therefore, a relatively small capacitor is used as the feedback capacitor 42 and the input capacitor 45 of the amplifier circuit 4. For example, the capacitance value of the feedback capacitor 42 is set to about 1 pF, and the capacitance value of the input capacitor 45 is set to about 10 pF. Therefore, in order to give the amplifier circuit 4 a certain time constant, a resistor 44 having a relatively high resistance (for example, several tens of TΩ) is used. Here, the resistor 44 is made of non-doped polysilicon.

  The non-doped and high-resistance resistor 44 generally has a large temperature coefficient (temperature characteristic) and a relatively large change in resistance value due to a temperature change. Therefore, when the resistor 44 has a negative temperature coefficient, the resistance value of the resistor 44 increases as the ambient temperature of the resistor 44 decreases, so that the gain of the amplifier circuit 4 increases with respect to the low frequency component. Therefore, if the limiter circuit 43 is not provided, the infrared detection device 1 has an excessive gain of the amplifier circuit 4 at the time of start-up or when the ambient temperature is lowered, and the subsequent circuit (for example, the AD conversion circuit 5) of the amplifier circuit 4 There is a possibility of saturation.

  Therefore, the infrared detecting device 1 of the present embodiment includes a limiter circuit 43 that is electrically connected in parallel with the feedback capacitor 42 between the inverting input terminal and the output terminal of the operational amplifier 41. In the present embodiment, the limiter circuit 43 is composed of a pair of diodes 431 and 432 connected in antiparallel to each other. That is, the (first) diode 431 and the (second) diode 432 are connected in parallel so as to be opposite to each other between both ends of the feedback capacitor 42. Here, the anode of the diode 431 is connected to the inverting input terminal of the operational amplifier 41, and the anode of the diode 432 is connected to the output terminal of the operational amplifier 41.

  With this configuration, when the voltage across the feedback capacitor 42 exceeds the forward voltage of the diode 431 or the diode 432, the amplifier circuit 4 is short-circuited across the feedback capacitor 42 by the limiter circuit 43. That is, the limiter circuit 43 functions to electrically short-circuit between both ends of the feedback capacitor 42 when the both-end voltage of the feedback capacitor 42 exceeds a predetermined threshold voltage. Here, the threshold voltage is defined by the forward voltage of the diode 431 or the diode 432, and is 0.5 V as an example. In the amplifier circuit 4, when the limiter circuit 43 is in operation, that is, when both ends of the feedback capacitor 42 are short-circuited, the voltage amplification factor decreases and the output thereof decreases.

  In short, the limiter circuit 43 electrically connects between both ends of the feedback capacitor 42 (resistor 44) when the gain of the amplifier circuit 4 increases and the voltage across the feedback capacitor 42 (the voltage across the resistor 44) exceeds the threshold voltage. Short-circuit to lower the gain of the amplifier circuit 4. As a result, the infrared detecting device 1 according to the present embodiment can prevent the gain of the amplifier circuit 4 from becoming excessive due to the operation of the limiter circuit 43 at a low temperature, for example. The circuit 5) is less likely to be saturated. Therefore, the infrared detecting device 1 has an advantage that the output of the amplifier circuit 4 is not easily saturated while suppressing power consumption as much as possible.

  The AD conversion circuit 5 is an AD converter that converts an analog value (voltage value) input from the amplifier circuit 4 into a digital value (AD conversion) and outputs the digital value to the digital circuit 6. In the present embodiment, as an example, the AD converter circuit 5 uses a successive approximation AD converter. Here, the successive approximation AD converter may be a charge redistribution type using a capacitor, a ladder resistance type using a ladder resistor, or a combination thereof. As a result, the AD conversion circuit 5 can achieve high resolution with a simple circuit configuration. However, the AD conversion circuit 5 is not limited to the successive approximation method, and other types of AD converters may be used. For example, if a ΔΣ (delta sigma) type AD converter is used in the AD conversion circuit 5, a relatively small and highly accurate AD conversion circuit 5 can be realized.

  In general, in an AD converter, an input voltage range (input range) in which AD conversion is possible (that is, an AD conversion characteristic is guaranteed) is individually determined as a full scale. Therefore, the AD conversion circuit 5 can also convert only analog values within the full scale into digital values, and analog values exceeding the full scale upper limit value are converted into digital values corresponding to the upper limit value. That is, the output of the AD conversion circuit 5 is saturated when a signal having an amplitude outside the full scale is input.

  The AD converter circuit 5 quantizes the output value of the amplifier circuit 4 at a sampling timing set at a predetermined time interval (sampling period) and converts it into a digital value. In the present embodiment, the AD conversion circuit 5 performs AD conversion at a sampling timing set with a sampling period of 10 ms as an example. In human body detection, since the detection target is near 1 Hz, the sampling period is preferably set to a period sufficiently shorter than 1 s (for example, 0.1 s or less).

  The digital circuit 6 determines the presence / absence of a human body in the detection area based on the digital signal input from the AD conversion circuit 5. Specifically, the digital circuit 6 compares the output value of the AD conversion circuit 5 (digital value corresponding to the output of the amplifier circuit 4) with a predetermined threshold value to determine whether a human body exists in the detection area. It has the determination part 61 which determines. The determination unit 61 determines that there is a person in the detection area during the period when the absolute value of the output value of the AD conversion circuit 5 exceeds the threshold value, and outputs an H level detection signal. It is determined that there is no person in the detection area, and the detection signal is set to L level.

  The digital circuit 6 is a digital bandpass filter (hereinafter referred to as a bandpass filter) having a passband in the frequency band of current signals generated by the pyroelectric element 2 during human body detection (here, assumed to be about 0.1 Hz to 10 Hz). (Referred to as “BPF”) 62.

  Here, when an analog BPF is used, an element such as a capacitor having a relatively large circuit constant is required to pass a signal of about 0.1 Hz to 10 Hz. Since such an element is externally attached to an IC (integrated circuit), the circuit portion of the infrared detecting device 1 cannot be formed into a single chip with this configuration. On the other hand, the infrared detecting device 1 of the present embodiment has an advantage that the circuit part can be made into a single chip by using the digital BPF 62 as described above, eliminating the need for external components.

  In the infrared detection device 1 having the above configuration, the output from the pyroelectric element 2 is converted into a voltage signal by the conversion circuit 3, amplified by the amplification circuit 4, and input to the AD conversion circuit 5. That is, the voltage signal input to the AD conversion circuit 5 is a signal obtained by converting the output (current signal) of the pyroelectric element 2 into a voltage signal by the conversion circuit 3 and further amplifying by the amplifier circuit 4. The AD conversion circuit 5 converts the input voltage signal into a digital value and outputs the digital value to the digital circuit 6. The digital circuit 6 determines the presence or absence of a human body in the detection area based on the input digital value, and outputs the determination result from the first output terminal 71 to an external device (external circuit).

  Further, the digital circuit 6 is configured to be able to serially output a digital signal corresponding to the output value of the AD conversion circuit 5 from the second output terminal 72. Specifically, the digital circuit 6 employs a signal format including a start bit, a main filter output, a detection signal state, an operation mode determination result, and a stop bit. The main filter output represents an instantaneous value of a signal obtained by removing at least unnecessary components from the output of the amplifier circuit 4 through the digital BPF 62. The digital circuit 6 outputs, for example, a 16-bit digital signal by serial communication in synchronization with a transmission clock (for example, 20 kHz) in one communication. As a result, the digital circuit 6 can superimpose the clock and various data and transmit them with a single signal line, so there is an advantage that the number of terminals can be reduced and the infrared detector 1 can be downsized.

  The digital circuit 6 may be configured to serially output the output value of the AD conversion circuit 5 as a digital signal. That is, the digital circuit 6 may serially output the digital signal output from the AD conversion circuit 5 without passing through the digital BPF 62. Further, the configuration in which the processing circuit 10 includes the AD conversion circuit 5 and the digital circuit 6 is not an essential configuration, and the BPF and the determination unit may be configured by an analog circuit.

  By the way, the integrated circuit 100 of the processing circuit 10 is provided with the temperature measuring unit 8 and the control unit 9 as described above. The temperature measurement unit 8 is configured to measure the ambient temperature of the integrated circuit 100, and the control unit 9 is configured to change the sensitivity of the processing circuit 10 according to the measurement value of the temperature measurement unit 8. That is, the temperature measuring unit 8 and the control unit 9 are integrated (one-chip) with the conversion circuit 3 and the amplifier circuit 4 and have a function of adjusting the sensitivity of the processing circuit 10 according to the temperature of the integrated circuit 100. doing.

  More specifically, the temperature measuring unit 8 outputs an electric signal (measured value) corresponding to the ambient temperature of the integrated circuit 100 when the electrical characteristic value changes according to the ambient temperature of the integrated circuit 100. It is configured.

  In the present embodiment, the temperature measuring unit 8 outputs an electrical signal corresponding to the ambient temperature of the integrated circuit 100 by using a resistor having a temperature characteristic such that the resistance value changes according to the temperature. Specifically, as shown in FIG. 2, the temperature measurement unit 8 includes a measurement resistor 81, a constant current source 82, a measurement unit 83, and a compensation unit 84. The measurement resistor 81 is electrically connected to a constant current source 82, and the constant current source 82 is configured to flow a constant current through the measurement resistor 81. The current flowing through the measuring resistor 81 is a minute current that is negligible compared to the current consumption of the entire infrared detection device 1.

  The measurement unit 83 measures the voltage across the measurement resistor 81 and outputs an electrical signal (measurement value) having a magnitude corresponding to the voltage across the measurement resistor 81 to the control unit 9. Since the resistance value of the measuring resistor 81 changes according to the temperature of the measuring resistor 81, that is, the ambient temperature of the integrated circuit 100, the voltage across the measuring resistor 81 in a state where a constant current flows is the voltage of the integrated circuit 100. It will change according to the ambient temperature. Therefore, the electrical signal output from the measuring unit 83 is a signal having a magnitude corresponding to the temperature of the integrated circuit 100.

  Here, in the infrared detection device 1 of the present embodiment, the temperature measurement unit 8 is configured using, for example, a non-doped polysilicon resistor whose resistance value greatly changes with a temperature change. That is, the measuring resistor 81 is configured by a non-doped polysilicon resistor formed in the integrated circuit 100. Here, the resistance value of the measuring resistor 81 is set to a relatively high resistance exceeding 100 MΩ at room temperature (about 25 degrees).

  FIG. 3 shows the temperature characteristics of the non-doped polysilicon resistor, with the horizontal axis representing temperature and the vertical axis representing resistance. As shown in FIG. 3, the measurement resistor 81 made of a non-doped polysilicon resistor has a negative temperature characteristic in which the resistance value decreases as the temperature increases. It is not essential that the measurement resistor 81 has a negative temperature characteristic, and the measurement resistor 81 may have a positive temperature characteristic.

  In general, non-doped polysilicon resistors have large variations in resistance values among individuals, but the temperature characteristics have relatively small variations between individuals. For this reason, the non-doped polysilicon resistor is not suitable for use as a sensor that requires measurement accuracy, but, as in the infrared detection device 1 of the present embodiment, a rough temperature measurement that can be used for sensitivity adjustment. Can be used. In short, since the infrared detection device 1 of the present embodiment only uses the measurement value of the temperature measurement unit 8 in order to determine the sensitivity when determining the presence or absence of the detection target (human body), the resistance for measurement The variation of the resistance value among the 81 individuals is allowed to some extent.

  The compensator 84 is configured such that the relative relationship between the ambient temperature of the integrated circuit 100 and the electrical signal (measured value) output from the measuring unit 83 is substantially constant regardless of variations in the resistance value of the measuring resistor 81 and the like. In addition, it has a function of compensating the temperature characteristics of the temperature measuring unit 8. The compensation unit 84 compensates the temperature characteristic of the temperature measurement unit 8 by adjusting a coefficient applied to the voltage across the measurement resistor 81 by the measurement unit 83 when the infrared detection device 1 is shipped from the factory, for example.

  The control unit 9 is configured to change the sensitivity of the processing circuit 10 in accordance with the measurement value of the temperature measurement unit 8 configured as described above (the output of the measurement unit 83). In the present embodiment, as described above, the processing circuit 10 compares the voltage signal amplified by the amplifier circuit 4 with a threshold value, thereby determining the presence / absence of a detection target (human body) in the detection area. It has. Therefore, the control unit 9 is electrically connected to the digital circuit 6 including the determination unit 61, and changes the threshold value used in the determination unit 61 according to the measurement value of the temperature measurement unit 8, thereby sensitivity of the processing circuit 10. Is configured to change.

  In the present embodiment, the control unit 9 is configured to increase the sensitivity of the processing circuit 10 as the ambient temperature of the integrated circuit 100 increases. Specifically, the control unit 9 is configured to reduce the threshold used by the determination unit 61 when the voltage across the measurement resistor 81 is low (the ambient temperature of the integrated circuit 100 is high). Here, the control unit 9 selects one threshold value from a plurality of preset threshold values (first threshold value, second threshold value,...) And applies the selected threshold value to the determination unit 61. The voltage is switched to a smaller threshold as the voltage at both ends decreases. That is, when the ambient temperature of the integrated circuit 100 increases, the control unit 9 reduces the threshold value from the first threshold value Vth1, −Vth1 to the second threshold value Vth2, −Vth2, for example, as shown in FIG. Increase sensitivity of 10. FIG. 4 represents a voltage signal input to the determination unit 61 when a detection target (human body) enters the detection area with the horizontal axis as a time axis.

  That is, in an environment where there is a sufficient temperature difference between the human body and the background, the determination unit 61 compares the voltage signal X1 amplified by the amplifier circuit 4 with the first threshold values Vth1 and −Vth1. In this state, when the absolute value of the voltage signal X1 exceeds the first threshold value Vth1, −Vth1, the determination unit 61 determines that there is a detection target (human body) in the detection area.

  On the other hand, in an environment where the temperature is high and the temperature difference between the human body and the background is small, such as in summer, the determination unit 61 lowers the threshold value to the second threshold values Vth2 and −Vth2 and compares them with the voltage signal after amplification by the amplifier circuit 4. To do. In this state, the amplitude of the voltage signal X2 amplified by the amplifier circuit 4 is smaller than the amplitude of the voltage signal X1 described above, and therefore the absolute value of the voltage signal X2 has the threshold value with the first threshold values Vth1 and −Vth1. It will not exceed. If the threshold value becomes the second threshold value Vth2, −Vth2, the absolute value of the voltage signal X2 is likely to exceed the threshold value, so that the sensitivity of the processing circuit 10 is improved.

  In the example of FIG. 4, the threshold value of the determination unit 61 changes in two stages, the first threshold value and the second threshold value. However, the present invention is not limited to this example, and the control unit 9 The threshold value may be changed in three or more stages.

  In the present embodiment, the processing circuit 10 includes a conversion circuit 3, an amplification circuit 4, an AD conversion circuit 5, a digital circuit 6, a temperature measurement unit 8, and a control unit 9 as one integrated circuit. By integrating in 100, the processing circuit 10 is made into one chip. However, it is not essential that the processing circuit 10 is a single chip, and external components may be added as appropriate.

  According to the infrared detection device 1 of the present embodiment described above, the processing circuit 10 includes the conversion circuit 3 and the amplification circuit 4 realized by the integrated circuit 100, and the integrated circuit 100 includes the temperature measurement unit 8 and A control unit 9 is provided. The temperature measurement unit 8 measures the ambient temperature of the integrated circuit 100, and the control unit 9 changes the sensitivity of the processing circuit 10 according to the measurement value of the temperature measurement unit 8.

  That is, since the conversion circuit 3 and the amplification circuit 4 are included in the integrated circuit 100, the circuit portion of the infrared detection device 1 can be made into one chip. In addition, since the integrated circuit 100 is provided with the temperature measuring unit 8 and the control unit 9, the infrared detecting device 1 integrates the sensitivity of the processing circuit 10 without adding any external components to the integrated circuit 100. It can be changed according to the temperature of the circuit 100.

  Therefore, the infrared detection device 1 has sufficient sensitivity even in an environment where the temperature difference between the human body and the background is small, such as in summer, by increasing the sensitivity of the processing circuit 10 as the temperature of the integrated circuit 100 increases. Can detect the detection target (human body). Therefore, the infrared detecting device 1 has an advantage that the sensitivity is hardly lowered even when the temperature changes.

  Moreover, it is preferable that the temperature measurement part 8 is comprised using a non-doped polysilicon resistance like this embodiment. According to this configuration, the infrared detecting device 1 can realize the function of measuring the ambient temperature of the integrated circuit 100 using only the integrated circuit 100 without using external components, and thus can be downsized as a whole. . The temperature measuring unit 8 is not necessarily configured using a non-doped polysilicon resistor, and an appropriate configuration can be adopted.

  Further, as in the present embodiment, the processing circuit 10 includes a determination unit 61 that determines whether or not there is a detection target in the detection area by comparing the voltage signal amplified by the amplifier circuit 4 with a threshold value. The control unit 9 is preferably configured to change the threshold according to the measurement value of the temperature measurement unit 8. According to this configuration, the control unit 9 can change the sensitivity of the processing circuit 10 by changing the threshold value used in the determination unit 61 according to the measurement value of the temperature measurement unit 8. Therefore, the infrared detection device 1 can change the sensitivity of the processing circuit 10 according to the temperature of the integrated circuit 100 with a relatively simple configuration.

(Embodiment 2)
As shown in FIG. 5, the infrared detection device 1 of the present embodiment is implemented in that the control unit 9 is configured to change the gain of the processing circuit 10 according to the measurement value of the temperature measurement unit 8. This is different from the infrared detection device 1 of the first embodiment. Hereinafter, the same configurations as those of the first embodiment are denoted by common reference numerals, and description thereof is omitted as appropriate.

  That is, in the first embodiment, the control unit 9 is configured to change the sensitivity of the processing circuit 10 by changing the threshold value used in the determination unit 61, whereas in the present embodiment, the control unit 9 performs the conversion. The sensitivity of the processing circuit 10 is changed by changing the gain of the circuit 3 or the like. The control unit 9 is electrically connected to the processing circuit (amplifier circuit 4 in the example of FIG. 5), and changes the sensitivity of the processing circuit 10 by changing the gain according to the measurement value of the temperature measurement unit 8. It is configured to let you.

  In the present embodiment, the control unit 9 is configured to increase the sensitivity of the processing circuit 10 as the ambient temperature of the integrated circuit 100 increases. Specifically, the control unit 9 is configured to increase the gain of the amplifier circuit 4 when the voltage across the measurement resistor 81 is low (the ambient temperature of the integrated circuit 100 is high). Here, the control unit 9 selects one gain from a plurality of preset gains and applies it to the amplifier circuit 4, and switches to a larger gain as the voltage across the measurement resistor 81 decreases. It is configured as follows. That is, the amplifier circuit 4 has a frequency characteristic that has a gain determined for each frequency band, as shown in FIG. 6, for example. Operates to switch frequency characteristics. FIG. 6 shows an example of frequency characteristics of the amplifier circuit 4 with the horizontal axis representing frequency and the vertical axis representing gain (conversion impedance).

  That is, in an environment where the temperature is high and the temperature difference between the human body and the background is small, such as in summer, the control unit 9 compares the threshold with the determination unit 61 by increasing the gain over the entire frequency band, for example. The voltage signal is increased relative to the threshold value. As a result, the absolute value of the voltage signal tends to exceed the threshold value, and the sensitivity of the processing circuit 10 is improved. Alternatively, in an environment where the temperature is high and the temperature difference between the human body and the background is small, such as in summer, the control unit 9 controls the low frequency component in order to suppress the low frequency fluctuation component that occurs regardless of the detection target (human body). It may be configured to reduce the gain.

  On the other hand, in an environment where the temperature is low and the temperature difference between the human body and the background is large, such as in winter, the control unit 9 compares the threshold with the determination unit 61, for example, by reducing the gain over the entire frequency band. The voltage signal is made relatively small with respect to the threshold value.

  According to the configuration of the present embodiment described above, the control unit 9 can change the sensitivity of the processing circuit 10 by changing the gain of the processing circuit 10 according to the measurement value of the temperature measurement unit 8. . Therefore, the infrared detection device 1 can change the sensitivity of the processing circuit 10 according to the temperature of the integrated circuit 100 with a relatively simple configuration. In addition, the control unit 9 has an advantage that fine sensitivity adjustment is possible by changing the frequency characteristic of the processing circuit 10 as in the present embodiment.

  Other configurations and functions are the same as those of the first embodiment.

(Embodiment 3)
The infrared detection device 1 according to the present embodiment is configured so that the control unit 9 changes the sensitivity of the processing circuit 10 only when the processing circuit 10 is in the operation mode. Different from the device 1. Hereinafter, the same configurations as those of the first embodiment are denoted by common reference numerals, and description thereof is omitted as appropriate.

  In the present embodiment, the processing circuit 10 is configured to switch between an operation mode in which the detection target is detected and a pause mode in which the detection target is not detected based on the output of the pyroelectric element 2. That is, the control unit 9 does not change the sensitivity of the processing circuit 10 when the processing circuit 10 is in the pause mode, and changes the sensitivity of the processing circuit 10 only when the processing circuit 10 is in the operation mode.

  Here, the processing circuit 10 sets a starting threshold value smaller than the threshold value separately from the threshold value used for determining the presence or absence of the human body in the determination unit 61, and the voltage signal output from the amplifier circuit 4 is the starting threshold value. It operates in the operation mode for a certain period of time after exceeding. In short, the processing circuit 10 compares the voltage signal output from the amplifier circuit 4 with the activation threshold value in the pause mode, and operates in the operation mode for a certain period of time after the absolute value of the voltage signal exceeds the activation threshold value. Will work.

  And the control part 9 processes according to the measured value of the temperature measurement part 8 only for the fixed time after the voltage signal which the amplifier circuit 4 exceeds a starting threshold value, ie, the period when the processing circuit 10 operate | moves in operation mode. The sensitivity of the circuit 10 is changed.

  According to the infrared detection device 1 of the present embodiment described above, the adjustment of the sensitivity of the processing circuit 10 by the control unit 9 is performed only in the operation mode in which the processing circuit 10 actually detects the detection target. Then, the function of the control unit 9 that adjusts the sensitivity of the processing circuit 10 is disabled. Therefore, the infrared detection device 1 can suppress power consumption by the control unit 9 and the temperature measurement unit 8 as much as possible.

  Other configurations and functions are the same as those of the first embodiment. Further, the configuration of the present embodiment can be applied in combination with the configuration described in the second embodiment (the configuration in which the control unit 9 changes the gain of the processing circuit 10 in accordance with the measurement value of the temperature measurement unit 8). It is.

DESCRIPTION OF SYMBOLS 1 Infrared detector 10 Processing circuit 100 Integrated circuit 2 Pyroelectric element 3 Conversion circuit 4 Amplifying circuit 61 Determination part 8 Temperature measurement part 81 Resistance for measurement (non-doped polysilicon resistance)
9 Control unit

Claims (5)

A pyroelectric element;
A processing circuit for detecting a detection target based on the output of the pyroelectric element,
The processing circuit includes:
A conversion circuit that converts a current signal output from the pyroelectric element into a voltage signal;
An integrated circuit including an amplifier circuit that amplifies the voltage signal output from the converter circuit;
The integrated circuit is provided with a temperature measurement unit that measures the temperature around the integrated circuit, and a control unit that changes the sensitivity of the processing circuit in accordance with the measurement value of the temperature measurement unit. Infrared detector. The processing circuit further includes a determination unit that determines the presence / absence of the detection target in a detection area by comparing the voltage signal amplified by the amplification circuit with a threshold value,
The infrared detection device according to claim 1, wherein the control unit is configured to change the threshold value according to a measurement value of the temperature measurement unit. The infrared detection device according to claim 1, wherein the control unit is configured to change a gain of the processing circuit in accordance with a measurement value of the temperature measurement unit. The processing circuit is configured to switch between an operation mode in which the detection target is detected and a sleep mode in which the detection target is not detected based on an output of the pyroelectric element,
The said control part is comprised so that the sensitivity of the said processing circuit may be changed only when the said processing circuit is in the said operation mode. The Claim 1 characterized by the above-mentioned. Infrared detector. The infrared detection device according to claim 1, wherein the temperature measurement unit is configured using a non-doped polysilicon resistor.

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