JP2016054310A - Through electrode substrate and semiconductor device using through electrode substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a through electrode substrate that eliminates a problem due to gas accumulated in a gas reservoir in a through hole and can prevent a filler in the through hole from falling off.SOLUTION: A through electrode substrate of the present invention includes: a substrate having a through hole that penetrates a first opening on a first surface and a second opening on a second surface; and a filler arranged in the through hole. The second opening is larger than the first opening, and a minimum opening part having the smallest area in a plain view exists between the first opening and the second opening. The through electrode substrate also includes a gas emission part that is arranged so as to contact the filler being exposed to either the first surface or the second surface.SELECTED DRAWING: Figure 1

Description

The present invention relates to a through electrode substrate having a through electrode penetrating the front and back surfaces of the substrate, and more particularly to a through electrode substrate used as an interposer substrate for connecting a plurality of elements. The present invention also relates to a semiconductor device using a through electrode substrate.

2. Description of the Related Art In recent years, development of a through electrode substrate having a conductive portion that conducts between a front surface and a back surface of a substrate as an interposer between LSI chips has been advanced. In such a through electrode substrate, the through electrode is formed by filling the through hole with a conductive material by electrolytic plating or the like.

An LSI chip having a narrow pitch / short dimension wiring is disposed on the upper surface of the through electrode substrate. Further, the semiconductor mounting substrate having the wide pitch and long dimension wiring is disposed on the lower surface of the through electrode substrate. The following documents are known as conventional techniques for through electrode substrates.

Japanese Patent Application No. 2005-514387 Japanese Patent Application No. 2010-548586 Japanese Patent Application No. 2003-513037 Japanese Patent Application No. 2011-528851 International Publication No. 2010/087483 International Publication No. 2005/034594 International Publication No. 2003/007370 International Publication No. 2011/024921 Patent No. 4241202 Patent No. 4203277 Patent No. 4319831 Patent No. 4022180 Japanese Patent No. 4564342 Japanese Patent No. 4835141 Patent No. 5119623 JP 2009-23341 A Patent No. 2976955 JP 2003-243396 A JP 2003-198069 A Patent No. 4012375

In the through electrode, the conductive material is filled in the through hole as described above, or a conductive film is formed along the side wall of the through hole, and the remaining resin in the through hole is filled with the insulating resin. Or may be filled. In the through electrode, in order to prevent the filling material filled in the through hole from falling off, there is a technique for providing a taper inside the through hole or forming many crater-like irregularities inside the through hole. (Patent Document 3 and Patent Document 4).

However, even if an attempt is made to prevent the filling from falling off by such a technique, a gap may be formed between the filling and the side wall of the through hole, and a gas pool may be generated there. If heat is applied to the substrate in this state, in the conventional technology, the gas accumulated in the gas reservoir expands, and there is a risk that the through hole and the filling material may be destroyed, causing the filling material to drop off. There is.

Accordingly, the present invention has been made in view of such problems, and has solved the problems caused by the gas accumulated in the gas reservoir in the through hole, and has made it possible to prevent the filler in the through hole from falling off. And a semiconductor device.

According to one embodiment of the present invention,
A substrate having a through-hole penetrating the first opening on the first surface and the second opening on the second surface;
A filler disposed in the through hole,
The second opening is larger than the first opening, and a minimum opening having a smallest area in plan view exists between the first opening and the second opening;
There is provided a through electrode substrate having a gas discharge portion arranged so as to be in contact with the filler exposed on one of the first surface and the second surface.

Also, according to one embodiment of the present invention,
The first portion and the second opening are penetrated through the first opening on the first surface and the second opening on the second surface, and the first portion and the first portion and the first opening are seen in a plan view between the first opening and the second opening. A substrate having a through hole having a second portion having a large area;
A filler disposed in the through hole,
There is provided a through electrode substrate having a gas discharge portion arranged so as to be in contact with the filler exposed on one of the first surface and the second surface.

Moreover, you may make it at least one part of the side wall of the said through-hole contain the curve which has an inflexion point in cross-sectional view.

The gas discharge part may be an insulating resin that discharges the gas in the through hole to the outside.

At least a part of the gas discharge part may be arranged between the side wall of the through hole and the filler.

The gas discharge part may have an opening, and the opening of the gas discharge part may have a larger area in plan view as it is separated from the substrate side.

A conductive film may be disposed between the side wall of the through hole and the filler.

An insulating film and a conductive film may be sequentially disposed between the side wall of the through hole and the filler from the side wall side of the through hole.

The conductive film may be disposed on the first surface and the second surface.

The filling may be a conductive material.

The filling may be an insulating material.

The substrate may be an insulating substrate.

The substrate may be a conductive substrate.

The gas discharge part has an opening,
You may make it the opening of the said gas discharge | release part overlap with the said 1st opening and the said 2nd opening.

The gas discharge part has an opening,
You may make it the opening of the said gas discharge | release part not overlap with the said 1st opening and the said 2nd opening.

The gas discharge part is disposed on the first surface and the second surface,
You may make it the area where the said gas discharge | release part of the said 2nd surface side contacts the said filler be larger than the area where the said gas discharge | release part of the said 1st surface side contacts the said filling.

In addition, according to one embodiment of the present invention, there is provided a semiconductor device having an LSI substrate, a semiconductor chip, and the through electrode substrate of the present invention.

ADVANTAGE OF THE INVENTION According to this invention, the malfunction by the gas which accumulates in the gas pool in a through-hole can be eliminated, the fall off of the filler in a through-hole can be prevented, and a highly reliable through-electrode board | substrate and semiconductor device can be provided. .

It is a figure which shows the structure of the penetration electrode substrate 100 of this invention which concerns on 1st Embodiment. It is a figure which shows the structure of the penetration electrode substrate 200 of this invention which concerns on 2nd Embodiment. It is a figure which shows the structure of the penetration electrode substrate 300 of this invention which concerns on 3rd Embodiment. It is a figure which shows the structure of the penetration electrode substrate 400 of this invention which concerns on 4th Embodiment. It is a figure which shows the structure of the penetration electrode substrate 100 of this invention which concerns on 5th Embodiment. It is a figure which shows the structure of the penetration electrode substrate 100 of this invention which concerns on 6th Embodiment. It is a figure which shows the structure of the penetration electrode substrate 100 of this invention which concerns on 7th Embodiment. The example which the alignment of the opening (via | veer) 110 on the filling material 105 in the penetration electrode substrate 100 of this invention which concerns on 7th Embodiment shifted | deviated is shown. It is a figure which shows the structure of the penetration electrode substrate 200 of this invention which concerns on 7th Embodiment. It is a figure which shows the structure of the penetration electrode substrate 300 of this invention which concerns on 7th Embodiment. It is a figure which shows the structure of the penetration electrode substrate 400 of this invention which concerns on 7th Embodiment. It is a figure which shows the structure of the semiconductor device 1000 of this invention which concerns on 8th Embodiment. It is a figure which shows the structure of the semiconductor device 1000 of this invention which concerns on 8th Embodiment. It is a figure which shows the structure of the semiconductor device 1000 of this invention which concerns on 8th Embodiment.

Hereinafter, the through electrode substrate of the present invention will be described in detail with reference to the drawings. The through electrode substrate of the present invention is not limited to the following embodiments, and can be implemented with various modifications. In all the embodiments, the same components are described with the same reference numerals.

(First embodiment)
The configuration of the through electrode substrate 100 of the present invention according to the first embodiment will be described with reference to FIG. FIG. 1A is a plan view of a through electrode substrate 100 according to the present embodiment as viewed from above. FIG. 1B is a cross-sectional view taken along the line AA ′ of FIG. 1A and 1B also show a part of the through electrode substrate 100 of the present invention according to this embodiment for convenience of explanation.

The through electrode substrate 100 of the present invention according to this embodiment includes a substrate 102, a through hole 104, a filler 105, insulating layers 106 and 108, and vias 110 and 112. A wiring structure, an electronic component, or the like may be further mounted on each of the first surface 102a and the second surface 102b side of the substrate 102.

In the present embodiment, the substrate 102 has insulating properties, and for example, glass, sapphire, resin, or the like can be used. Although there is no restriction | limiting in particular in the thickness of the board | substrate 102, For example, it can set suitably in the range of 10 micrometers-1 mm.

The through hole 104 is a through hole that penetrates the first opening 104a disposed on the first surface 102a of the substrate 102 and the second opening 104b disposed on the second surface 102b that is the surface opposite to the first surface 102a. is there. The shape of the through-hole 104 changes from the first opening 104a toward the second opening 104b in a non-constant manner. In other words, the shape of the side wall of the through-hole 104 changes from the first opening 104a toward the second opening 104b. The through hole 104 typically has a second opening 104b larger than the first opening 104a, and has a constriction (constriction) between the first opening 104a and the second opening 104b. More specifically, the through-hole 104 is a minimum opening 104c having a minimum area M in a plan view (that is, viewed from the upper surface), and a side wall of the through-hole 104 in a cross-sectional view (that is, viewed in the AA ′ section). Is an inflection point 104d (curve having the inflection point 104d) that changes by a curve, and a maximum opening 104e having a maximum area L in plan view (that is, viewed from the top). In the present embodiment, the inflection point 104d of the through hole 104 is disposed closer to the second opening 104b than the center of the through hole 104. However, the inflection point of the through hole 104 is not limited to this. 104d may be arranged closer to the first opening 104a than the center of the through hole 104. Note that the through hole 104 can be formed by performing etching, laser processing, sandblasting, or the like on the substrate 102. The size of the through holes 104 is not particularly limited, but the size of the maximum opening 104e is preferably 200 μm or less in order to realize a narrow pitch.

A filler 105 is disposed inside the through hole 104. In the present embodiment, the filling material 105 is a conductive material, and for example, a conductive material such as a metal deposit such as Cu, a conductive paste containing Cu, or a conductive resin is used. When a metal such as Cu is used as the filler 105, an electrolytic plating filling method is used. In the case where a conductive paste or conductive resin having fluidity is used as the filling material 105, the conductive paste or conductive resin is filled into the through holes 104 using a spatula or a scraper, and then heat treatment or the like is performed. By this, the filler 105 can be formed.

The insulating layers 106 and 108 are respectively disposed on the first surface 102a and the second surface 102b of the substrate 102 directly or via an intermediate layer (not shown). The insulating layers 106 and 108 are made of, for example, an insulating resin material such as polyimide or benzocyclobutene, and may be an insulator having a gas releasing function. The insulating layers 106 and 108 function as a gas discharge part that discharges the gas generated and released in the through-hole 104 to the outside (permeates the gas). At least one of the insulating layers (gas releasing portions) 106 and 108 is disposed so as to be in contact with the filler 105 exposed on the first surface 102 a and the second surface 102 b of the substrate 102. In addition, when a gap exists between the side wall of the through hole 104 and the filler 105, a part of the insulating layers (gas release portions) 106 and 108 are arranged between the side wall of the through hole 104 and the filler 105. That is, the insulating layers 106 and 108 may enter between the side wall of the through hole 104 and the filler 105. The insulating layers 106 and 108 are formed by, for example, using a photosensitive insulating material and performing desired patterning by photolithography.

In the through electrode substrate 100 of the present invention according to the present embodiment, as described above, the through hole 104 has the minimum opening 104c, the inflection point 104d, and the maximum opening 104e. The through hole 104 is filled with a filler 105. In the case shown in FIG. 1, the amount of the filler 105 is larger in the through hole 104 portion on the second surface 102 b side than in the through hole 104 portion on the first surface 102 a side. The amount of gas that is produced also increases. The area where the gas discharge portion 106 on the second surface 102b side contacts the filling 105 is larger than the area where the gas discharge portion 108 on the first surface 102a side contacts the filling 105, so that the second surface side The amount of gas released from the gas discharge unit 108 may be increased. Furthermore, since the second opening 104b is larger than the first opening 104a, the above contact area relationship can be easily obtained by making the diameters of the via 110 and the via 112 substantially the same.

The vias 110 and 112 which are openings are holes formed in the insulating layers (gas discharge portions) 106 and 108, respectively. Although not shown for convenience of explanation, wiring is formed in the vias 110 and 112 by plating or sputtering. These wirings come into contact with the filler 105 disposed in the through-hole 104, and these wirings become conductive. As shown in FIG. 1B, the vias 110 and 112, which are openings of the insulating layers (gas discharge portions) 106 and 108, are formed so as to overlap the first opening and the second opening of the substrate 102, respectively. . In other words, the vias 110 and 112 that are the openings of the insulating layers (gas discharge portions) 106 and 108 are disposed immediately above the first opening and the second opening of the substrate 102, respectively. In addition, the vias 110 and / or 112 that are openings of the insulating layers (gas release portions) 106 and 108 are formed so as to overlap with the first opening 104a and the second opening 104b of the substrate 102, respectively. It may be.

In the through electrode substrate 100 of the present invention according to the present embodiment, as described above, the through hole 104 has the minimum opening 104c, the inflection point 104d, and the maximum opening 104e. The through hole 104 is filled with a filler 105. By providing a difference in size between the first opening 104a and the second opening 104b, the filling property of the filling can be ensured. When a force acts on the filling 105 in the direction of the first surface 102a, the presence of the inflection point 104d can prevent the filling 105 from falling off the substrate 100. In addition, when a force acts on the filling 105 in the direction of the second surface 102b, the presence of the minimum opening 104c can prevent the filling 105 from falling off the substrate 100. Note that the through-electrode substrate 100 according to the present embodiment may have only one or both of the minimum opening 104c and the maximum opening 104d. Therefore, in the through electrode substrate 100 of the present invention according to the present embodiment, the filling property of the filling material 105 can be ensured, and the filling material 105 can be prevented from falling off in any direction.

Further, in the through electrode substrate 100 of the present invention according to this embodiment, as described above, at least one of the insulating layers (gas release portions) 106 and 108 is exposed to the first surface 102a and the second surface 102b of the substrate 102. It arrange | positions so that the filling material 105 to contact may be contacted. Therefore, the insulating layer (gas release part) 106 and / or 108 can release the gas generated and released in the through hole 104 to the outside, and the problem due to the gas accumulated in the gas reservoir in the through hole 104 can be prevented. Accordingly, the filling 105 in the through hole 104 can be prevented from falling off, and a highly reliable through electrode substrate can be provided.

Although it is preferable that there is no space between the side wall of the through hole 104 and the filler 105, there may be a slight space or gap between the side wall of the through hole 104 and the filler 105. Even in the case where such a space or gap occurs, in the through electrode substrate 100 of the present invention according to this embodiment, it is possible to prevent the filling portion 105 from falling off.

(Second Embodiment)
The configuration of the through electrode substrate 200 according to the second embodiment of the present invention will be described with reference to FIG. FIG. 2A is a plan view of the through electrode substrate 200 according to the present embodiment as viewed from above. FIG. 2B is a cross-sectional view taken along line AA ′ of FIG. 2A and 2B also show a part of the through electrode substrate 200 of the present invention according to this embodiment for convenience of explanation.

The through electrode substrate 200 of the present invention according to this embodiment includes a substrate 202, a through hole 204, a filling 205, insulating layers 206 and 208, a conductive film 207, and vias 210 and 212. Note that a wiring structure, an electronic component, and the like may be further mounted on each of the first surface 202a and the second surface 202b side of the substrate 202.

In the present embodiment, the substrate 202 has insulating properties, and for example, glass, sapphire, resin, or the like can be used. Although there is no restriction | limiting in particular in the thickness, the board | substrate 202 can be suitably set, for example in the range of 10 micrometers-1 mm.

The through hole 204 is a through hole penetrating the first opening 204a disposed on the first surface of the substrate 202 and the second opening 204b disposed on the second surface 202b which is the surface opposite to the first surface 202a. . Similar to the first embodiment described above, the shape of the through hole 204 is not constant but changes from the first opening 204a toward the second opening 204b. In other words, the shape of the side wall of the through-hole 204 changes from the first opening 204a toward the second opening 204b instead of being constant. The through hole 204 typically has a second opening 204b larger than the first opening 204a, and has a constriction (constriction) between the first opening 204a and the second opening 204b. More specifically, the through-hole 204 is a minimum opening 204c having a minimum area M in a plan view (that is, viewed from the upper surface), and a side wall of the through-hole 204 in a cross-sectional view (that is, viewed in the AA ′ section). Has an inflection point 204d (curve having the inflection point 204d) that changes by a curve, and a maximum opening 204e having a maximum area L in plan view (that is, viewed from the top). In the present embodiment, the inflection point 204d of the through hole 204 is disposed closer to the second opening 204b than the center of the through hole 204. However, the inflection point of the through hole 204 is not limited to this. 204d may be arranged closer to the first opening 204a than the center of the through hole 204. Note that the through hole 104 can be formed by performing etching, laser processing, sandblasting, or the like on the substrate 102. The size of the through holes 104 is not particularly limited, but the size of the maximum opening 104e is preferably 200 μm or less in order to realize a narrow pitch.

A conductive film 207 and a filling 205 are disposed inside the through hole 204. The conductive film 207 is disposed on the side wall side of the through hole 204, and a part of the conductive film 207 is disposed on the first surface 202 a and the second surface 202 b of the substrate 202. In this embodiment, the filler 205 is an insulating material, and for example, an organic material such as polyimide or benzocyclobutene, or an inorganic material such as silicon oxide or silicon nitride is used. The conductive film 207 can be formed by a method such as a plating method or a CVD method. The filling 205 can be formed by a method such as suction or thrusting, for example.

The insulating layers 206 and 208 are respectively disposed on the first surface 202a and the second surface 202b of the substrate 202 directly or via an intermediate layer (not shown). The insulating layers 206 and 208 are made of an insulating resin material such as polyimide or benzocyclobutene, and may be any insulator having a gas releasing function. The insulating layers 206 and 208 act as a gas discharge part that discharges the gas generated and released in the through hole 204 to the outside (permeates the gas). In the present embodiment, the insulating layers (gas releasing portions) 206 and 208 are arranged so as to cover and contact the filler 205 exposed on the first surface 202a and the second surface 202b of the substrate 202. At least one of the insulating layers (gas release portions) 206 and 208 may be disposed so as to be in contact with the filler 205 exposed on the first surface 202a and the second surface 202b of the substrate 202. In addition, when a gap exists between the side wall of the through hole 204 and the filler 205, a part of the insulating layers (gas release portions) 206 and 208 are arranged between the side wall of the through hole 204 and the filler 205. That is, the insulating layers 206 and 208 may enter between the side wall of the through-hole 204 and the filler 205. The insulating layers 206 and 208 are formed by performing desired patterning by photolithography using, for example, a photosensitive insulating material.

In the through electrode substrate 200 of the present invention according to the present embodiment, as described above, the through hole 204 has the minimum opening 204c, the inflection point 204d, and the maximum opening 204e. The through hole 204 is filled with a filling 205. In the case shown in FIG. 2, the amount of the filling 205 is larger in the portion of the through hole 204 on the second surface 202b side than the portion of the through hole 204 on the first surface 202a side, and the amount of gas released. Will also increase. Therefore, the area where the gas discharge part 206 on the second surface 202b side contacts the filling 205 is larger than the area where the gas discharge part 208 on the first surface side contacts the filling 205, so that the second surface The amount of gas released from the gas discharge unit 208 on the side may be increased.

Vias 210 and 212 which are openings are holes formed in 207 insulating layers (gas release portions) 206 and 208 on the conductive film 207 on the first surface 202a and the second surface 202b, respectively. Although not shown for convenience of explanation, wiring is formed in the vias 210 and 212 by plating or sputtering. These wirings come into contact with the conductive film 207 on the first surface 202a and the second surface 202b, and these wirings become conductive. In addition, the vias 210 and / or 212 that are openings of the insulating layers (gas release portions) 206 and 208 are formed so as to overlap with the first opening 204 a and the second opening 204 b of the substrate 202, respectively. It may be.

In the through electrode substrate 200 of the present invention according to the present embodiment, as described above, the through hole 204 has the minimum opening 204c, the inflection point 204d, and the maximum opening 204e. The through hole 204 is filled with a filling 205. By providing a difference in size between the first opening 204a and the second opening 204b, the filling property of the filler can be ensured. When a force acts on the filling 205 in the direction of the first surface 202a, the filling 205 can be prevented from falling off the substrate 200 due to the presence of the inflection point 204d. Further, when a force acts on the filling 205 in the direction of the second surface 202b, the presence of the minimum opening 204c can prevent the filling 205 from falling off the substrate 200. Note that the through electrode substrate 200 according to the present embodiment may have both or only one of the minimum opening 204c and the maximum opening 204d. Therefore, in the through electrode substrate 200 of the present invention according to the present embodiment, the filling property of the filling material 205 can be ensured and the filling material 205 can be prevented from falling off in any direction.

Further, in the through electrode substrate 200 of the present invention according to this embodiment, as described above, at least one of the insulating layers (gas release portions) 206 and 208 is exposed to the first surface 202a and the second surface 202b of the substrate 202. It arrange | positions so that the filling 205 to contact may be contacted. Therefore, the insulating layer (gas releasing part) 206 and / or 208 can discharge the gas generated and released in the through hole 204 to the outside, and the problem due to the gas accumulated in the gas reservoir in the through hole 204 is prevented. Accordingly, the filling 205 in the through hole 204 can be prevented from falling off, and a highly reliable through electrode substrate can be provided.

Note that it is preferable that there is no space between the conductive film 207 disposed on the side wall side of the through-hole 204 and the filler 205, but a slight space or gap is generated between the conductive film 207 and the filler 205. There is also a case. Even in the case where such a space or gap occurs, in the through electrode substrate 200 of the present invention according to the present embodiment, it is possible to prevent the filling portion 205 from falling off.

(Third embodiment)
The configuration of the through electrode substrate 300 according to the third embodiment of the present invention will be described with reference to FIG. FIG. 3A is a plan view of the through electrode substrate 300 according to the present embodiment as viewed from above. FIG. 3B is a cross-sectional view taken along the line AA ′ of FIG. 3A and 3B also show a part of the through electrode substrate 300 of the present invention according to this embodiment for convenience of explanation.

The through electrode substrate 300 of the present invention according to this embodiment includes a substrate 302, a through hole 304, a filler 305, insulating layers 306 and 308, an insulating layer 307, and vias 310 and 312. Note that a wiring structure, an electronic component, or the like may be further mounted on each of the first surface 302a and the second surface 302b side of the substrate 302.

In the present embodiment, the substrate 302 has conductivity, and for example, a semiconductor such as silicon or a metal such as stainless steel can be used. Although there is no restriction | limiting in particular in the thickness, the board | substrate 302 can be suitably set, for example in the range of 10 micrometers-1 mm.

Similar to the first and second embodiments described above, the through hole 304 is disposed on the first opening 304a disposed on the first surface 302a of the substrate 302 and the second surface 302b which is the surface opposite to the first surface 302a. It is a through-hole penetrating the second opening 304b. The shape of the through-hole 304 changes from the first opening 304a toward the second opening 304b instead of being constant. In other words, the shape of the side wall of the through-hole 304 changes from the first opening 304a toward the second opening 304b instead of being constant. The through-hole 304 typically has a second opening 304b larger than the first opening 304a, and has a constriction (constriction) between the first opening 304a and the second opening 304b. More specifically, the through-hole 304 is a minimum opening 304c having a minimum area M in a plan view (that is, viewed from the upper surface), and a side wall of the through-hole 304 in a cross-sectional view (that is, viewed in the AA ′ section). Has an inflection point 304d (curve having an inflection point 304d) that changes by a curve, and a maximum opening 304e having a maximum area L in plan view (that is, viewed from the upper surface). In the present embodiment, the inflection point 304d of the through hole 304 is disposed closer to the second opening 304b than the center of the through hole 304. However, the inflection point of the through hole 304 is not limited to this. 304 d may be arranged closer to the first opening 304 a than the center of the through hole 304. Note that the through-hole 304 can be formed by performing etching, laser processing, sandblasting, or the like on the substrate 302. The size of the through holes 304 is not particularly limited, but the size of the maximum openings 304e is preferably 200 μm or less in order to realize a narrow pitch.

An insulating layer 307 and a filler 305 are disposed inside the through hole 304. The insulating film 307 is disposed on the side wall side of the through hole 304, and part of the insulating film 307 is disposed on the first surface and the second surface of the substrate 302. In the present embodiment, the filler 305 is a conductive material, and for example, a conductive material such as a metal deposit such as Cu, a conductive paste containing Cu, or a conductive resin is used. When a metal such as Cu is used as the filler 305, an electrolytic plating filling method is used. When a fluid conductive paste or conductive resin is used as the filling material 305, the conductive paste or conductive resin is filled into the through-hole 304 using a spatula or a scraper, and then heat treatment or the like is performed. By this, the filler 305 can be formed.

The insulating layers 306 and 308 are respectively disposed on the first surface 302a and the second surface 302b of the substrate 302 directly or via an intermediate layer (not shown). The insulating layers 306 and 308 are made of an insulating resin material such as polyimide or benzocyclobutene, and may be any insulator having a gas releasing function. The insulating layers 306 and 308 function as a gas discharge portion that discharges the gas generated and released in the through hole 304 to the outside (permeates the gas). At least one of the insulating layers (gas release portions) 306 and 308 is disposed so as to contact the filler 305 exposed on the first surface and the second surface of the substrate 302. In addition, when a gap exists between the side wall of the through hole 304 and the filler 305, a part of the insulating layers (gas release portions) 306 and 308 is disposed between the side wall of the through hole 304 and the filler 305. That is, the insulating layers 306 and 308 may enter between the side wall of the through hole 304 and the filler 305. The insulating layers 306 and 308 are formed by performing desired patterning by photolithography using, for example, a photosensitive insulating material.

In the through electrode substrate 300 of the present invention according to this embodiment, as described above, the through hole 304 has the minimum opening 304c, the inflection point 304d, and the maximum opening 304e. The through hole 304 is filled with a filler 305. In the case shown in FIG. 3, the amount of the filler 305 is larger in the portion of the through-hole 304 on the second surface 302b side than in the portion of the through-hole 304 on the first surface 302a side, and is released accordingly. The amount of gas is increased. Therefore, the area where the gas discharge part 306 on the second surface side contacts the filler 305 is larger than the area where the gas discharge part 308 on the first surface 302a side contacts the filler 305, so that the second surface The amount of gas released from the gas release unit 308 on the 302b side may be increased. Further, since the second opening 304b is larger than the first opening 304a, the above contact area relationship can be easily obtained by making the diameters of the via 310 and the via 312 substantially the same.

Vias 310 and 312 which are openings are holes formed in insulating layers (gas release portions) 306 and 308, respectively. Although not shown for convenience of explanation, wiring is formed in the vias 310 and 312 by plating or sputtering. These wirings come into contact with the filler 305 disposed in the through-hole 304, and these wirings become conductive. As shown in FIG. 3B, the vias 310 and 312 which are openings of the insulating layers (gas release portions) 306 and 308 are formed so as to overlap with the first opening 304a and the second opening 304b of the substrate 302, respectively. Is done. In other words, the vias 310 and 312 that are the openings of the insulating layers (gas releasing portions) 306 and 308 are disposed immediately above the first opening 304a and the second opening 304b of the substrate 302, respectively. In addition, the vias 310 and / or 312 that are openings of the insulating layers (gas release portions) 306 and 308 are formed so as to overlap with the first opening 304 a and the second opening 304 b of the substrate 302, respectively. It may be.

In the through electrode substrate 300 of the present invention according to this embodiment, as described above, the through hole 304 has the minimum opening 304c, the inflection point 304d, and the maximum opening 304e. The through hole 304 is filled with a filler 305. By providing a difference in size between the first opening 304a and the second opening 304b, the filling property of the filling can be ensured. When a force acts on the filling 305 in the direction of the first surface 302a, the presence of the inflection point 304d can prevent the filling 305 from falling off the substrate 300. Further, when a force acts on the filling 305 in the direction of the second surface 302a, the filling 305 can be prevented from falling off the substrate 300 due to the presence of the minimum opening 304c. Note that the through-electrode substrate 300 according to the present embodiment may have both or only one of the minimum opening 304c and the maximum opening 304d. Therefore, in the through electrode substrate 300 of the present invention according to the present embodiment, the filling property of the filling material 305 can be ensured and the filling material 305 can be prevented from falling off in any direction.

In the through electrode substrate 300 of the present invention according to this embodiment, as described above, at least one of the insulating layers (gas release portions) 306 and 308 is exposed to the first surface 302a and the second surface 302b of the substrate 302. It is arrange | positioned so that the filling 305 to contact may be contacted. Therefore, the insulating layer (gas release part) 306 and / or 308 can discharge the gas generated and released in the through hole 304 to the outside, and the problem due to the gas accumulated in the gas pool in the through hole 304 is eliminated. Accordingly, the filling 305 in the through hole 304 can be prevented from falling off, and a highly reliable through electrode substrate can be provided.

Note that it is preferable that there is no space between the insulating layer 307 disposed on the side wall of the through-hole 304 and the filler 305, but there is a slight space or gap between the insulating layer 307 and the filler 305. Sometimes it ends up. Even in the case where such a space or gap occurs, in the through electrode substrate 300 of the present invention according to the present embodiment, it is possible to prevent the filling portion 305 from falling off.

(Fourth embodiment)
The configuration of the through electrode substrate 400 of the present invention according to the fourth embodiment will be described with reference to FIG. FIG. 4A is a plan view of the through electrode substrate 400 according to the present embodiment as viewed from above. FIG. 4B is a cross-sectional view taken along line AA ′ of FIG. 4A and 4B also show a part of the through electrode substrate 400 of the present invention according to this embodiment for convenience of explanation.

The through electrode substrate 400 of the present invention according to this embodiment includes a substrate 402, a through hole 404, a filler 405, insulating layers 406 and 408, an insulating layer 407, a conductive film 409, and vias 410 and 412. Note that a wiring structure, an electronic component, and the like may be further mounted on each of the first surface 402 a and the second surface 402 b side of the substrate 402.

In the present embodiment, the substrate 402 has conductivity, and for example, a semiconductor such as silicon or a metal such as stainless steel can be used. Although there is no restriction | limiting in particular in the thickness of the board | substrate 402, For example, it can set suitably in the range of 10 micrometers-1 mm.

The through hole 404 is a through hole that passes through the first opening 404a disposed on the first surface 402a of the substrate 402 and the second opening 404b disposed on the second surface 402b that is the surface opposite to the first surface 402a. is there. The shape of the through-hole 404 is not constant and changes from the first opening 404a toward the second opening 404b, as in the first to third embodiments. In other words, the shape of the side wall of the through-hole 404 changes from the first opening 404a toward the second opening 404b instead of being constant. The through hole 404 typically has a second opening 404b larger than the first opening 404a, and has a constriction (constriction) between the first opening 404a and the second opening 404b. More specifically, the through hole 404 is a minimum opening 404c having a minimum area M in a plan view (that is, viewed from the upper surface), and a side wall of the through hole 404 in a sectional view (that is, viewed in the AA ′ cross section). Has an inflection point 404d (curve having the inflection point 404d) that changes by a curve, and a maximum opening 404e having a maximum area L in plan view (that is, viewed from the upper surface). In the present embodiment, the inflection point 404d of the through hole 404 is disposed closer to the second opening 404b than the center of the through hole 404. However, the inflection point of the through hole 404 is not limited to this. 404 d may be arranged closer to the first opening 404 a than the center of the through hole 404. Note that the through hole 404 can be formed by performing etching, laser processing, sandblasting, or the like on the substrate 402. The size of the through holes 404 is not particularly limited, but the size of the maximum opening 404e is preferably 200 μm or less in order to realize a narrow pitch.

An insulating layer 407, a conductive film 409, and a filler 405 are disposed inside the through hole 404. The insulating layer 407 is disposed on the side wall side of the through hole 404, and part of the insulating layer 407 is disposed on the first surface and the second surface of the substrate 402. The conductive film 409 is disposed on the insulating layer 407 side of the through-hole 404, and part of the conductive film 409 is disposed on the first surface and the second surface of the substrate 402. In this embodiment, the filler 405 is an insulating material, and for example, an organic material such as polyimide or benzocyclobutene, or an inorganic material such as silicon oxide or silicon nitride is used. The conductive film 407 can be formed by a method such as a plating method or a CVD method, for example. The filler 405 can be formed by a method such as suction or thrusting, for example.

The insulating layers 406 and 408 are respectively disposed on the first surface 402a and the second surface 402b of the substrate 402 directly or via an intermediate layer (not shown). The insulating layers 406 and 408 are made of an insulating resin material such as polyimide, and may be an insulator having a gas releasing function. The insulating layers 406 and 408 act as a gas discharge part that discharges the gas generated and released in the through hole 404 to the outside (permeates the gas). In the present embodiment, the insulating layers (gas release portions) 406 and 408 are arranged so as to cover and contact the filler 405 exposed on the first surface and the second surface of the substrate 202. At least one of the insulating layers (gas releasing portions) 406 and 408 may be disposed so as to be in contact with the filler 405 exposed on the first surface 402 a and the second surface 402 b of the substrate 402. Further, in the case where a gap exists between the side wall of the through hole 404 and the filler 405, a part of the insulating layers (gas release portions) 406 and 408 is replaced with the side wall of the through hole 404 and / or the insulating layer 407 and the filler 405. In other words, the insulating layers 406 and 408 may enter between the side wall of the through hole 404 and the filler 405. The insulating layers 406 and 408 are formed by, for example, using a photosensitive insulating material and performing desired patterning by photolithography.

In the through electrode substrate 400 of the present invention according to this embodiment, as described above, the through hole 404 has a minimum opening 404c, an inflection point 404d, and a maximum opening 404e. The through hole 404 is filled with a filler 405. In the case shown in FIG. 4, the amount of the filler 405 is larger in the portion of the through hole 404 on the second surface 402b side than in the portion of the through hole 404 on the first surface 402a side. The amount of increases. Therefore, the area where the gas discharge part 406 on the second surface 402b side contacts the filler 405 is larger than the area where the gas discharge part 408 on the first surface 402a side contacts the filler 405. The amount of gas released from the gas discharge portion 408 on the surface 402b side may be increased. Further, since the second opening 404b is larger than the first opening 404a, the above contact area relationship can be easily obtained by making the diameters of the via 410 and the via 412 substantially the same.

Vias 410 and 412 which are openings are holes formed in 207 insulating layers (gas releasing portions) 406 and 408 on the conductive film 409 on the first surface and the second surface, respectively. Although not shown for convenience of explanation, wiring is formed in the vias 410 and 412 by plating or sputtering. These wirings come into contact with the conductive film 409 on the first surface 402a and the second surface 402b, and these wirings become conductive. In addition, the vias 410 and / or 412 that are openings of the insulating layers (gas release portions) 406 and 408 are formed so as to overlap with the first opening 404 a and the second opening 404 b of the substrate 402, respectively. It may be.

In the through electrode substrate 400 of the present invention according to this embodiment, as described above, the through hole 404 has a minimum opening 404c, an inflection point 404d, and a maximum opening 404e. The through hole 404 is filled with a filler 405. By providing a difference in size between the first opening 404a and the second opening 404b, the filling property of the filling can be ensured. When a force acts on the filling 405 in the direction of the first surface 402a, the filling 405 can be prevented from falling off the substrate 400 due to the presence of the inflection point 404d. In addition, when a force acts on the filling 405 in the direction of the second surface, the filling 405 can be prevented from falling off the substrate 400 due to the presence of the minimum opening 404c. Note that the through-electrode substrate 400 according to this embodiment may have both or only one of the minimum opening 404c and the maximum opening 404d. Therefore, in the through electrode substrate 400 of the present invention according to this embodiment, the filling property of the filling material 405 can be ensured and the filling material 405 can be prevented from falling off in any direction.

Further, in the through electrode substrate 400 of the present invention according to this embodiment, as described above, at least one of the insulating layers (gas release portions) 406 and 408 is exposed to the first surface 402a and the second surface 402b of the substrate 402. It is arrange | positioned so that the filling 405 to contact may be contacted. Therefore, the insulating layer (gas release part) 406 and / or 408 can discharge the gas generated and released in the through hole 404 to the outside, and the problem due to the gas accumulated in the gas reservoir in the through hole 404 is prevented. Accordingly, the filling 405 in the through hole 404 can be prevented from falling off, and a highly reliable through electrode substrate can be provided.

Note that it is preferable that there is no space between the conductive film 409 disposed in the through-hole 404 and the filler 205, but there is a slight space or gap between the conductive film 209 and the filler 405. There is also. Even in the case where such a space or gap occurs, in the through electrode substrate 400 of the present invention according to the present embodiment, it is possible to prevent the filling portion 405 from falling off.

(Fifth embodiment)
FIG. 5A is a cross-sectional view of the through electrode substrate 100 of the present invention according to this embodiment. FIG. 5B is an enlarged view of a portion 104f in FIG. 4A and 4B also show a part of the through electrode substrate 100 of the present invention according to this embodiment for convenience of explanation.

As shown in FIG. 5A, the through electrode substrate 100 of the present invention according to the present embodiment is the same as the first surface of the first opening 104a of the through hole 104 in the through electrode substrate 100 of the present invention according to the first embodiment. The connecting portion 104f has a curved surface. Further, the connecting portion 104g of the through hole 104 with the second surface of the second opening 104b has a curved surface. Since other configurations are the same as those of the first embodiment, description thereof is omitted.

In the through electrode substrate 100 of the present invention according to the present embodiment, the connecting portions 104f and 104g of the through hole 104 each have a curved surface, so that the filling material 405 can be easily filled.

In the other embodiments 2 to 4 described above, the connection portion of the through hole with the first surface of the first opening has a curved surface, and the connection with the first surface of the second opening of the through hole is also performed. By making the portion have a curved surface, the same configuration as in the present embodiment can be adopted.

(Sixth embodiment)
The configuration of the through electrode substrate 100 according to the sixth embodiment of the present invention will be described with reference to FIG. FIG. 6A is a plan view of the through electrode substrate 400 according to the present embodiment as viewed from above. FIG. 6B is a cross-sectional view taken along line AA ′ of FIG. 6A and 6B also show a part of the through electrode substrate 100 of the present invention according to this embodiment for convenience of explanation.

The through electrode substrate 100 of the present invention according to the present embodiment is the same as the through electrode substrate 100 of the present invention according to the first embodiment, as shown in FIG. It is arranged closer to the first opening 104a than the center. Since other configurations are the same as those of the first embodiment, description thereof is omitted.

Moreover, also in other Embodiment 2-5 mentioned above, the structure similar to this embodiment is employable by arrange | positioning the inflection point of a through-hole near 1st opening rather than the center of a through-hole. .

(Seventh embodiment)
The configuration of the through electrode substrate 100 of the present invention according to the seventh embodiment will be described with reference to FIG. FIG. 7A is a plan view of the through electrode substrate 100 according to the present embodiment as viewed from above. FIG. 7B is a cross-sectional view taken along line AA ′ of FIG. 7A and 7B also show a part of the through electrode substrate 100 of the present invention according to this embodiment for convenience of explanation.

The through electrode substrate 100 of the present invention according to this embodiment is similar to the through electrode substrate 100 of the present invention according to the first embodiment, as shown in FIG. 112 is provided so that the area increases in plan view (that is, viewed from the upper surface) as the distance from the substrate 102 side increases. In other words, the angle α formed by the gas discharge portions 106 and 108 and the filler 105 has an angle of about 45 degrees to about 89 degrees in a sectional view (that is, viewed in the A-A ′ section). Since other configurations are the same as those of the first embodiment, description thereof is omitted. The insulating layers 106 and 108 are formed by, for example, using a photosensitive insulating material and performing desired patterning by photolithography. By adjusting the exposure conditions, the insulating layers 106 and 108 are opened ( The vias 110 and 112 can be formed so as to increase in area in plan view as they are separated from the substrate 102 side.

In the through electrode substrate 100 of the present invention according to the present embodiment, by having the configuration as described above, disconnection of the wiring arranged in the opening (via) can be prevented.

8A and 8B are schematic plan views of the through electrode substrate 100 of the present invention according to this embodiment. In the present embodiment, the openings (vias) 110 and 112 of the gas discharge portions 106 and 108 are provided so that the area increases in plan view (that is, viewed from the upper surface) as they are separated from the substrate 102 side. The area of the openings (vias) 110 and 112 on the filling 105 can be reduced, and contact between the openings (vias) 110 and 112 and the filling 105 can be secured, so that the openings (vias) 110 and 112 are formed. It is possible to reduce the possibility of contact failure due to misalignment.

For example, FIG. 8A shows a case where the opening (via) 110 on the filling 105 is shifted to the right side. FIG. 8B shows a case where the opening (via) 110 on the filling 105 is shifted to the right side and a part of the opening (via) 110 comes off from the filling 105. 8A and 8B, since the contact between the openings (vias) 110 and 112 and the filler 105 can be secured, the possibility of contact failure due to misalignment of the openings (vias) 110 and 112 is possible. Can be reduced.

Moreover, also in other Embodiment 2-4 mentioned above, as shown in FIGS. 9-11, the structure similar to this embodiment is employable. This will be described below.

The through electrode substrate 200 of the present invention according to the present embodiment is similar to the through electrode substrate 200 of the present invention according to the second embodiment, as shown in FIG. Reference numeral 212 is provided so that the area increases in plan view (that is, viewed from the upper surface) as the distance from the substrate 202 side increases. In other words, the angle α formed by the gas discharge portions 206 and 208 and the filling 205 has an angle of about 45 degrees to about 89 degrees in a sectional view (that is, viewed in the A-A ′ section). Since other configurations are the same as those in the second embodiment, the description thereof is omitted.

As shown in FIG. 10A, the through electrode substrate 300 of the present invention according to this embodiment is the same as the through electrode substrate 300 of the present invention according to the third embodiment. 312 is provided so that the area increases in plan view (that is, viewed from the upper surface) as the distance from the substrate 302 side increases. In other words, the angle α formed by the gas discharge portions 306 and 308 and the filler 305 has an angle of about 45 degrees to about 89 degrees in a cross-sectional view (that is, in the A-A ′ cross section). Since other configurations are the same as those in the third embodiment, the description thereof is omitted.

The through electrode substrate 400 of the present invention according to the present embodiment is similar to the through electrode substrate 400 of the present invention according to the fourth embodiment, as shown in FIG. 11A, with openings (vias) 410 of the gas discharge portions 406 and 408 and 412 is provided so that the area increases in plan view (that is, viewed from the top surface) as the distance from the substrate 402 side increases. In other words, the angle α formed by the gas discharge portions 406 and 408 and the filler 405 has an angle of about 45 degrees to about 89 degrees in a cross-sectional view (that is, in the A-A ′ cross section). Other configurations are the same as those in the fourth embodiment, and thus the description thereof is omitted.

As described above, in any configuration of the present embodiment, the area of the opening (via) on the filling can be reduced, and the contact between the opening (via) and the filling can be secured. ), The possibility of contact failure due to misalignment can be reduced.

(Eighth embodiment)
The configuration of the semiconductor device 1000 according to the eighth embodiment of the present invention will be described with reference to FIGS. In the present embodiment, a semiconductor device 1000 using the through electrode substrate in the first to seventh embodiments described above will be described.

FIG. 12 is a diagram showing a semiconductor device 1000 according to the present embodiment. In the semiconductor device 1000, three through-electrode substrates 100 according to the present invention are stacked and connected to an LSI substrate (semiconductor substrate) 500. A wiring layer 502 is provided on the LSI substrate 500. For example, a semiconductor element such as a DRAM is disposed on the through electrode substrate 100. A wiring layer 120 is provided on the through electrode substrate 100. As shown in FIG. 12, the wiring layer 502 of the LSI substrate 500 and the wiring layer 120 of the through electrode substrate 100 are connected via bumps 1002. For the bump 1002, for example, a metal such as indium, copper, or gold is used. As shown in FIG. 12, the wiring layer 120 of the through electrode substrate 100 and the wiring layer 120 of another through electrode substrate 100 are connected via bumps 1002.

When the through electrode substrate 100 is laminated, the number of layers is not limited to three, but may be two, or four or more. Further, the connection between the through-electrode substrate 100 and another substrate is not limited to using bumps, and other bonding techniques such as eutectic bonding may be used. Alternatively, polyimide, epoxy resin, or the like may be applied and baked to bond the through electrode substrate 100 and another substrate.

FIG. 13 is a diagram showing another example of the semiconductor device 1000 according to the present embodiment of the present invention. A semiconductor device 1000 illustrated in FIG. 13 includes semiconductor chips (LSI chips) 600 and 602 such as a MEMS device, a CPU, a memory, and an IC, and a through electrode substrate 100 stacked and connected to the LSI substrate 500.

The through electrode substrate 100 is disposed between the semiconductor chip 6000 and the semiconductor chip 602, and both are connected by bumps 1002. A semiconductor chip 600 is placed on the LSI substrate 500, and the LSI substrate 500 and the semiconductor chip 602 are connected by a wire 604. In this example, the through-electrode substrate 100 is used as an interposer for stacking a plurality of semiconductor chips and mounting them three-dimensionally. By stacking a plurality of semiconductor chips having different functions, a multi-functional semiconductor device is obtained. be able to. For example, by using the semiconductor chip 600 as a three-axis acceleration sensor and the semiconductor chip 602 as a two-axis magnetic sensor, a semiconductor device in which a five-axis motion sensor is realized by one module can be realized.

When the semiconductor chip is a sensor formed by a MEMS device, the sensing result may be output as an analog signal. In this case, a low-pass filter, an amplifier, and the like may be formed on the semiconductor chips 600 and 602 or the through electrode substrate 100.

FIG. 14 is a diagram illustrating another example of the semiconductor device 1000 according to the present embodiment. The two examples (FIGS. 12 and 13) described above are three-dimensional mounting, but in this example, the through electrode substrate 100 is an example in which two-dimensional and three-dimensional mounting is applied. In the example shown in FIG. 14, six through electrode substrates 100 are stacked and connected to the LSI substrate 500. However, all the through electrode substrates 100 are not only laminated and arranged, but are also arranged side by side in the in-plane direction of the substrate.

In the example of FIG. 14, two through electrode substrates 100 are connected on the LSI substrate 500, the through electrode substrate 100 is further connected on the through electrode substrate 100, and the through electrode substrate 100 is further formed on the through electrode substrate 10. It is connected. In addition, even when the through electrode substrate 100 is used as an interposer for connecting a plurality of semiconductor chips as in the example shown in FIG. 13, such two-dimensional and three-dimensional mounting is possible. For example, some through electrode substrates 100 may be replaced with semiconductor chips.

Moreover, in the example of FIGS. 12-14, although the example using the penetration electrode substrate 100 of this invention which concerns on 1st Embodiment as a penetration electrode substrate was shown, it is not necessarily limited to this, Other embodiment The through electrode substrate 200, 300 and / or 400 of the present invention according to the present invention may be used.

The semiconductor device 1000 of the present invention according to this embodiment includes various devices such as mobile terminals (mobile phones, smartphones, notebook personal computers, etc.), information processing devices (desktop personal computers, servers, car navigation systems, etc.), home appliances, and the like. It is installed in various electrical equipment.

100, 200, 300, 400 Through electrode substrate 102, 202, 302, 402 Substrate 104, 204, 304, 404 Through hole 105, 205, 305, 405 Filler 106, 108, 206, 208, 306, 308, 406, 408 Insulating layer 207, 409 Conductive film 307, 407 Insulating layer 110, 112, 210, 212, 310, 312, 410, 412 Via (opening)

Claims (12)

A substrate having a through-hole penetrating the first opening on the first surface and the second opening on the second surface;
A conductive layer disposed on a side wall of the through hole,
The second opening is larger than the first opening, and a minimum opening having a smallest area in plan view exists between the first opening and the second opening;
Between the second opening and the minimum opening, at least a part of the side wall of the through hole includes a curve having an inflection point in a sectional view.   The through electrode substrate according to claim 1, further comprising an insulating filler disposed inside the conductive layer.   The through electrode substrate according to claim 1, wherein the conductive layer fills the inside of the through hole.   2. The through electrode substrate according to claim 1, wherein a maximum opening having a largest area in a plan view exists between the second opening and the inflection point. A first portion that passes through the first opening on the first surface and the second opening on the second surface, and has a smaller area in plan view than the first opening, and the first portion between the first opening and the second opening. A substrate having a through hole having a first portion and a second portion having a larger area in plan view than the first opening;
A conductive layer disposed on a side wall of the through hole,
Between the first part and the second part, at least a part of the side wall of the through hole includes a curve having an inflection point in a sectional view.   The through electrode substrate according to claim 5, further comprising an insulating filler disposed inside the conductive layer.   The through electrode substrate according to claim 5, wherein the conductive layer fills the inside of the through hole. The second opening has a larger area in plan view than the first opening,
The through electrode substrate according to claim 5, wherein the second portion has a larger area in plan view than the second opening.   The through electrode substrate according to claim 1, wherein the conductive layer is also disposed on the first surface and the second surface.   The through electrode substrate according to claim 1, wherein the substrate has an insulating property.   The through electrode substrate according to claim 1, wherein the substrate has conductivity. A semiconductor device comprising an LSI substrate, a semiconductor chip, and the through electrode substrate according to claim 1.

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