JP2016021597A - Substrate processing method, recording medium with computer program for execution of substrate processing method stored therein, and substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing method by which the production of particles on a surface of a substrate can be suppressed.SOLUTION: A substrate processing method according to the present invention comprises: a process for performing a chemical treatment on a substrate W; a process for subsequently performing a rinse process by supplying a rinse liquid to the substrate W; and a dry process for thereafter drying the substrate W while rotating the substrate W. The dry process includes: a first dry step in which a dry liquid is supplied to the substrate W while rotating the substrate W with a first rotation number; a second dry step in which after the first dry step, the substrate is slowed down to a second rotation number lower than the first rotation number while supplying the substrate with the dry liquid, provided that during the second dry step, with a break applied to the rinse liquid and the dry liquid on the substrate W, the rinse liquid is stirred together with the dry liquid and replaced therewith; a third dry step in which after the second dry step, the rotation number of the substrate is increased to a third rotation number from the second one while supplying the dry liquid to the substrate; and a fourth dry step after that, in which the dry liquid on the substrate is thrown off from there by rotating the substrate.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a substrate processing method for processing a substrate, a recording medium on which a computer program for executing the substrate processing method is recorded, and a substrate processing apparatus.

  For example, in a semiconductor device manufacturing process, a substrate processing apparatus that uses a spin chuck to hold a wafer (substrate) and supplies the chemical solution to the wafer while rotating the wafer to clean the wafer is used (for example, patents). Reference 1).

  When cleaning a wafer using such a substrate processing apparatus, first, dilute hydrofluoric acid (DHF liquid) is discharged onto the wafer while rotating the wafer held by the spin chuck, and chemical cleaning with the DHF liquid is performed. Then, pure water (rinsing liquid) is discharged onto the wafer to perform a rinsing process. Thereafter, isopropyl alcohol (IPA) is supplied to the wafer and the wafer is dried.

JP 2009-59895 A

  By the way, when the wafer is dried, the wafer is dried after the pure water on the wafer surface is replaced with the IPA liquid. If the pure water on the wafer surface cannot be sufficiently replaced with the IPA liquid, the drying process is performed. In some cases, pure water remains on the wafer surface during the process, and particles may be formed by the pure water remaining on the wafer surface. Further, in order to sufficiently replace the pure water and the IPA liquid, there is a problem that the consumption amount of the IPA liquid increases or the processing time with the IPA liquid becomes long.

  The present invention has been made in consideration of such points, and a substrate processing method capable of suppressing the rinsing liquid on the surface of the substrate from being sufficiently replaced with the drying liquid, and executing the substrate processing method are performed. An object of the present invention is to provide a recording medium on which a computer program for recording is recorded and a substrate processing apparatus.

  The present invention includes a chemical treatment process for supplying a chemical solution to a substrate, a rinse treatment step for supplying a rinse liquid to the substrate after the chemical treatment process, and a drying treatment step for drying the substrate after the rinse treatment step. The drying process includes a first drying process that supplies a drying liquid to the substrate while rotating the substrate at a first rotational speed, and a first substrate while supplying the drying liquid to the substrate after the first drying process. After the second drying process step of decelerating to a second rotational speed lower than the rotational speed, and after the second drying process step, the rotational speed of the substrate is increased from the second rotational speed to the third rotational speed while supplying the drying liquid to the substrate. And a third drying process step.

  The present invention relates to a recording medium on which a computer program for executing a substrate processing method is recorded. The substrate processing method includes a chemical solution processing step for supplying a chemical solution to a substrate, and a rinsing of the substrate after the chemical solution processing step. A rinsing process for supplying a liquid; and a drying process for drying the substrate after the rinsing process. The drying process includes a first process of supplying a drying liquid to the substrate while rotating the substrate at a first rotational speed. After the drying process and the first drying process, after the second drying process and the second drying process, the substrate is decelerated to a second rotational speed lower than the first rotational speed while supplying the drying liquid to the substrate. And a third drying process for increasing the number of rotations of the substrate from the second number of rotations to the third number of rotations while supplying the drying liquid to the substrate.

  The present invention relates to a rotatable substrate holding unit that holds a substrate, a rotation driving unit that rotationally drives the substrate holding unit, a chemical supply mechanism that supplies a chemical to a substrate held by the substrate holding unit, and a substrate holding unit. A rinsing liquid supply mechanism for supplying a rinsing liquid to the held substrate, a drying liquid supply mechanism for supplying a drying liquid to the substrate held by the substrate holding unit, a rotation drive unit, a chemical liquid supply mechanism, a rinsing liquid supply mechanism, and a drying unit A control unit that controls the liquid supply mechanism, and the control unit controls the rotation drive unit, the chemical liquid supply mechanism, the rinse liquid supply mechanism, and the dry liquid supply mechanism to supply the chemical liquid to the substrate, and the chemical liquid A rinsing process for supplying a rinsing liquid to the substrate after the processing process; and a drying process for drying the substrate after the rinsing process, wherein the drying process is performed while rotating the substrate at a first rotational speed. Supply drying liquid to A first drying process, a second drying process after the first drying process, and a second drying process for decelerating the substrate to a second rotational speed lower than the first rotational speed while supplying a drying liquid to the substrate; And a third drying process step of increasing the number of rotations of the substrate from the second number of rotations to the third number of rotations while supplying a drying liquid to the substrate. It is a processing device.

  According to the present invention, generation of particles on the surface of the substrate can be suppressed.

FIG. 1 is a longitudinal sectional view showing an example of a sectional configuration of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a plan sectional view showing an example of a sectional configuration of the substrate processing apparatus according to the embodiment of the present invention. FIG. 3 is a diagram showing a flowchart of the substrate processing method in the embodiment of the present invention. FIG. 4 is a diagram showing the transition of the rotation speed of the substrate and the supply amount of the IPA liquid during the drying process in the substrate processing method according to the embodiment of the present invention. FIG. 5 is a diagram showing the behavior of pure water and IPA liquid during the drying process in the substrate processing method according to the embodiment of the present invention. FIGS. 6A, 6B, 6C, and 6D are views showing the movement of the drying liquid nozzle and the gas nozzle according to the modification of the present invention.

  Hereinafter, a substrate processing method according to an embodiment of the present invention, a recording medium on which a computer program for executing the substrate processing method is recorded, and a substrate processing apparatus will be described with reference to FIGS.

  First, the overall configuration of the substrate processing apparatus 1 will be described with reference to FIGS. 1 and 2.

  As shown in FIG. 1, a substrate processing apparatus 1 is rotatable so as to hold a processing container 10 and a substrate (for example, a semiconductor wafer, hereinafter simply referred to as a wafer W) that is provided in the processing container 10 and performs a cleaning process. A spin chuck (substrate holding unit) 20 and a rotation driving unit (motor) 25 for rotating the spin chuck 20 are provided.

  Among these, the processing container 10 is provided with a loading / unloading port 11 for the wafer W as shown in FIG. The loading / unloading port 11 is provided with a shutter 12 that can be freely opened and closed, and is opened when the wafer W is loaded / unloaded. The shutter 12 is connected to a control unit 80 which will be described later, and the shutter 12 is opened and closed based on a control signal from the control unit 80.

  Further, the spin chuck 20 and the rotation driving unit 25 are surrounded by a liquid receiving cup 10 </ b> A provided in the processing container 10.

  As shown in FIG. 1, the spin chuck 20 includes a rotation plate 21 and a holding member 22 that is provided on the peripheral edge of the rotation plate 21 and holds the wafer W. Among these, the holding members 22 are arranged at substantially equal intervals on the peripheral edge of the rotating plate 21 so as to hold the wafer W substantially horizontally.

  The rotation drive unit 25 is connected to the rotation plate 21 of the spin chuck 20 via a rotation drive shaft 26. A control unit 80 is connected to the rotation drive unit 25, and the rotation drive unit 25 is driven based on a control signal from the control unit 80 to rotate the rotation plate 21 and hold it on the holding member 22. The wafer W thus rotated is rotated in a substantially horizontal plane with the center as the center of rotation.

  Above the wafer W held by the spin chuck 20, a cleaning liquid nozzle 30 for supplying a chemical or pure water to the wafer W, a drying liquid nozzle 31 for supplying a drying liquid to the wafer W, and an inert gas to the wafer W are supplied. Gas nozzle 32 is provided. The cleaning liquid nozzle 30, the drying liquid nozzle 31, and the gas nozzle 32 are attached to the tip of the nozzle arm 33 via a connecting member 36 described later, and the nozzle arm 33 is moved along the guide rail 34 by the nozzle driving unit 35. . That is, the guide rail 34 is disposed substantially horizontally in the processing container 10, and the base end portion of the nozzle arm 33 is attached to the guide rail 34 so as to be movable substantially horizontally along the guide rail 34. It has been. By driving the nozzle driving unit 35 in this way, the nozzles 30, 31, and 32 are positioned above the wafer W so as to correspond to the center of the wafer W (above the center of the wafer W). , And a position corresponding to the peripheral edge of the wafer W (a position above the peripheral edge of the wafer W) is moved integrally in a substantially horizontal direction. Further, the nozzles 30, 31, and 32 also move integrally from a position corresponding to the peripheral portion of the wafer W to an upper position (retracted position) outside the peripheral edge of the wafer W. Yes. A control unit 80 is connected to the nozzle driving unit 35, and the nozzle driving unit 35 is driven based on a control signal from the control unit 80.

  The cleaning liquid nozzle 30, the drying liquid nozzle 31, and the gas nozzle 32 are attached to the connecting member 36 in close proximity to each other and aligned. Between the connecting member 36 and the tip of the nozzle arm 33, an elevating drive unit 37 that interposes the nozzles 30, 31, and 32 integrally is interposed. A lifting shaft 38 is connected between the connecting member 36 and the lifting drive unit 37.

  A controller 80 is connected to the lift drive unit 37, and the lift drive unit 37 is driven based on a control signal from the control unit 80 so that the nozzles 30, 31, and 32 are moved up and down. Yes. In this way, the height of each nozzle 30, 31, 32 relative to the wafer W is configured to be adjustable.

  The cleaning liquid nozzle 30, the drying liquid nozzle 31, and the gas nozzle 32 are linearly arranged in the radial direction of the wafer W held by the spin chuck 20, and each nozzle 30, 31, 32 is located at the center of the wafer W. It is attached to the nozzle arm 33 so as to be movable above the portion.

  A chemical liquid supply mechanism 40 is connected to the cleaning liquid nozzle 30, and the chemical liquid is discharged (supplied) to the wafer W held by the spin chuck 20 via the cleaning liquid nozzle 30. The chemical liquid supply mechanism 40 in the present embodiment has a DHF supply source 44 that is connected to the cleaning liquid nozzle 30 via a DHF supply line 43 and supplies diluted hydrofluoric acid (DHF liquid) to the wafer W. A DHF opening / closing valve 46 is provided in the DHF supply line 43. A control unit 80 is connected to the DHF on / off valve 46, and the DHF on / off valve 46 opens and closes based on a control signal from the control unit 80.

  A rinse liquid supply mechanism 50 is connected to the cleaning liquid nozzle 30 so that pure water (rinsing liquid) is discharged (supplied) to the wafer W held by the spin chuck 20 via the cleaning liquid nozzle 30. It has become. The rinsing liquid supply mechanism 50 is connected to the cleaning liquid nozzle 30 via a rinsing liquid supply line 51, and a rinsing liquid supply source 52 that supplies pure water to the wafer W, and a rinsing liquid opening / closing provided in the rinsing liquid supply line 51. And a valve 53. A control unit 80 is connected to the rinsing liquid on / off valve 53, and the rinsing liquid on / off valve 53 opens and closes based on a control signal from the control unit 80.

  The DHF supply line 43 and the rinsing liquid supply line 51 are merged between the on-off valves 46 and 53 and the cleaning liquid nozzle 30.

  A drying liquid supply mechanism 60 is connected to the drying liquid nozzle 31 so that the drying liquid is discharged (supplied) to the wafer W held by the spin chuck 20 via the drying liquid nozzle 31. . The drying liquid supply mechanism 60 is connected to the drying liquid nozzle 31 via a drying liquid supply line 61, and supplies a drying liquid made of isopropyl alcohol (IPA), which is more volatile than pure water, to the wafer W. A source 62 and a drying liquid opening / closing valve 63 provided in the drying liquid supply line 61 are provided. A controller 80 is connected to the drying liquid on / off valve 63, and the drying liquid on / off valve 63 opens and closes based on a control signal from the controller 80.

  Further, an inert gas supply mechanism 70 is connected to the gas nozzle 32 so that an inert gas is discharged (supplied) to the wafer W held by the spin chuck 20 via the gas nozzle 32. The inert gas supply mechanism 70 is connected to the gas nozzle 32 via a gas supply line 71, and is provided in the gas supply line 71 and a gas supply source 72 that supplies nitrogen gas (N 2 gas) as an inert gas to the wafer W. The gas on-off valve 73 is provided. Note that a control unit 80 is connected to the gas on-off valve 73, and the gas on-off valve 73 opens and closes based on a control signal from the control unit 80.

  As described above, the rotation driving unit 25, the nozzle driving unit 35, the DHF opening / closing valve 46 of the chemical liquid supply mechanism 40, the rinsing liquid on / off valve 53 of the rinsing liquid supply mechanism 50, the drying liquid on / off valve 63 of the drying liquid supply mechanism 60, and A controller 80 for controlling these is connected to the gas on-off valve 73 of the inert gas supply mechanism 70.

  By the way, as shown in FIG. 1, in order to manage the substrate processing apparatus 1 by the process manager or the like, the control unit 80 visualizes a keyboard for performing a command input operation or the like, an operation status of the substrate processing apparatus 1, and the like. An input / output device 81 comprising a display or the like for display is connected. Further, the control unit 80 can access a recording medium 82 in which a program for realizing processing executed by the substrate processing apparatus 1 is recorded. The recording medium 82 can be configured from a known recording medium such as a memory such as a ROM and a RAM, a disk-shaped recording medium such as a hard disk, a CD-ROM, a DVD-ROM, and a flexible disk. In this way, the processing of the wafer W is performed in the substrate processing apparatus 1 by the control unit 80 executing a program or the like recorded in advance on the recording medium 82.

  Next, the operation of the present embodiment having such a configuration, that is, the substrate processing method according to the present embodiment will be described. The operation of each component for executing the substrate processing method described below is controlled by a control signal from the control unit 80 based on a program recorded in advance on the recording medium 82.

  First, as shown in FIG. 3, the wafer W on which the pattern P is formed is held on the spin chuck 20 (step S1). In this case, first, the shutter 12 is opened, and the wafer W held by a transfer arm (not shown) is loaded into the processing container 10 through the loading / unloading port 11. Next, the wafer W is transferred from the transfer arm and held by the holding member 22 of the spin chuck 20.

  Subsequently, the spin chuck 20 holding the wafer W is rotationally driven by the rotational drive unit 25 (step S2).

  Thereafter, the nozzle driving unit 35 is driven, and the cleaning liquid nozzle 30 located at the retracted position moves to a position corresponding to the central portion of the wafer W held by the spin chuck 20 (step S3).

  Next, the wafer W is processed with a chemical solution while rotating the wafer W.

  In this case, first, the DHF liquid is supplied to the surface of the wafer W, and the surface of the wafer W is subjected to chemical treatment with the DHF liquid and cleaned (step S4). That is, the DHF opening / closing valve 46 is opened, and the DHF liquid is discharged from the DHF supply source 44 to the center of the surface of the wafer W through the DHF supply line 43 and the cleaning liquid nozzle 30. As a result, the discharged DHF liquid is diffused over the entire surface of the wafer W by centrifugal force, and the surface of the wafer W is processed with the DHF liquid. At this time, the number of rotations of the wafer W is preferably about 10 to 500 rpm, for example. After the DHF liquid film is formed, the DHF on-off valve 46 is closed to stop the supply of the DHF liquid.

  After the chemical processing is completed, as shown in FIG. 4, the wafer W is rinsed while rotating the wafer W (rinsing process, step S5). That is, the rinsing liquid opening / closing valve 53 is opened, and pure water is discharged from the rinsing liquid supply source 52 to the center of the surface of the wafer W through the rinsing liquid supply line 51 and the cleaning liquid nozzle 30. As a result, the discharged pure water is diffused over the entire surface of the wafer W by centrifugal force, and the chemical solution remaining on the surface of the wafer W is washed away to form a pure water liquid film on the surface of the wafer W. Is done. At this time, the number of rotations of the wafer W is preferably about 500 to 1500 rpm, for example. As a result, the chemical solution can be quickly pushed away from the surface of the wafer W to form a pure water liquid film. After the chemical liquid is sufficiently washed away, the rinse liquid on-off valve 53 is closed to stop the supply of the rinse liquid.

  After the rinsing process, as shown in FIG. 4, while the wafer W is rotated, the supply of the rinsing liquid is stopped and the wafer W is dried (drying process, step S6).

  The drying process is performed as follows. First, in a state where a liquid film of pure water is formed on the surface of the wafer W, the drying liquid on-off valve 63 is opened while rotating the wafer, and the drying liquid supply source 62 passes through the drying liquid supply line 61 and the drying liquid nozzle 31. Then, the IPA liquid is supplied to the central portion of the wafer W (125 ml / min). In this case, the drying liquid nozzle 31 is stopped above the center of the wafer W. Further, the wafer W rotates at the same rotation speed (1000 rpm) as the rotation speed (for example, 1000 rpm) in the rinsing process, but may be rotated at a first rotation speed (for example, 1500 rpm) higher than the rotation speed in the rinsing process. (First drying treatment step) (surface replacement).

  In this first drying process, the IPA liquid is diffused from the central portion of the wafer W to the peripheral portion by centrifugal force. At this time, by rotating the wafer W at a rotational speed higher than the rotational speed during the rinsing process, the IPA liquid is quickly spread from the central part to the peripheral part on the wafer W while leaving pure water on the wafer W. be able to.

  The behavior of pure water and IPA liquid during the first drying treatment step is shown in FIG. As shown in FIG. 5A, in the first drying process, the IPA liquid spreads over the surface of the pure water, and the surface portion of the pure water is replaced with the IPA liquid without exposing the pattern P of the wafer W. A part of the pure water remains in the pattern P of the wafer W.

  Next, while supplying the IPA liquid to the central portion of the wafer W (125 ml / min), the rotation speed of the wafer W is rapidly reduced, for example, from 1500 rpm (first rotation speed) to 300 rpm (second rotation speed) (second drying). Processing step) (stirring). FIG. 5B shows the behavior of pure water and IPA liquid during the second drying treatment step. As shown in FIG. 5B, in the second drying process, the centrifugal force applied to the pure water and the IPA liquid is rapidly reduced, and further, the pure water diffused from the central portion of the wafer W to the peripheral portion and An inertial force is applied to the IPA liquid, and the rotational speed of the wafer W is lowered so that a kind of sudden braking is applied to the pure water and the IPA liquid.

  As a result, the pure water remaining in the pattern P of the wafer W is also stirred from the inside of the pattern P to the outside of the pattern P, and the pure water is uniformly contained in the IPA liquid by rotating at the rotation speed for a predetermined time. And the pure water is sufficiently and uniformly replaced with the IPA liquid.

  Thereafter, while supplying the IPA liquid to the center of the wafer W (125 ml / min), the rotational speed of the wafer W is gradually increased to bring the rotational speed to, for example, 1000 rpm (third rotational speed) (third drying process step). ) (Full replacement).

  The behavior of pure water and IPA solution during the third drying treatment step is shown in FIG. As shown in FIG. 5C, by gradually increasing the rotational speed of the wafer W, the pure water is sufficiently replaced with the IPA liquid, and then the IPA liquid and the pure water uniformly dispersed in the IPA liquid are removed. The amount of pure water in the IPA liquid can be gradually reduced by quickly flowing away from the center portion of the wafer W to the peripheral portion.

  Thereafter, the drying liquid on-off valve 63 is closed and the supply of the IPA liquid to the wafer W is stopped, but the wafer W continues to rotate at the third rotational speed (fourth drying processing step) (IPA swing-off).

  By this fourth drying treatment step, the IPA liquid can be shaken off and dried.

Note that nitrogen gas (N ₂ gas) can be supplied to the wafer W during the fourth drying process step, and the IPA liquid on the wafer W can be spun off and dried.

Nitrogen gas (N ₂ gas) is supplied to the wafer W as follows.

  First, nitrogen gas is discharged from the gas nozzle 32 onto the surface of the wafer W, and the gas nozzle 32 moves (scans) from a position corresponding to the center of the wafer W to a position corresponding to the peripheral edge.

  In this way, the IPA liquid on the surface of the wafer W can be pushed out by nitrogen gas, and the IPA liquid can be quickly removed from the surface of the wafer W and the wafer W can be dried.

  After the gas nozzle 32 reaches a position corresponding to the peripheral edge of the wafer W, the gas on-off valve 73 is closed, the supply of nitrogen gas to the wafer W is stopped, the rotation speed of the wafer W is reduced, and the wafer W is dried. The process ends.

  Thereafter, the rotation of the wafer W is stopped, and a transfer arm (not shown) is inserted below the wafer W in a procedure reverse to the procedure for loading the wafer W, and the wafer W is transferred to the transfer arm. It is carried out.

As described above, according to the present embodiment, in the first drying process, the IPA liquid is supplied to the central portion of the wafer W while rotating the wafer W at the first rotation speed, and then in the second drying process, While the IPA liquid is continuously supplied to W, the rotational speed of the wafer W is decreased to the second rotational speed.
As a result, the centrifugal force applied to the pure water and the IPA liquid on the wafer W is reduced, and the penetrating force of the pure water and the IPA liquid diffusing from the central part to the peripheral part is reduced, thereby reducing the pure water and the IPA liquid. On the other hand, the brake can be applied. As a result, the pure water and the IPA liquid can be appropriately stirred on the wafer W to sufficiently and uniformly replace the pure water and the IPA liquid on the wafer W. Thereafter, in the third drying process step, the pure water and the IPA liquid are quickly pushed from the central part of the wafer W to the peripheral part by gradually increasing the rotational speed of the wafer W from the second rotational speed to the third rotational speed. However, the amount of pure water in the IPA liquid can be reduced.

  Thereafter, in the fourth drying treatment step, the IPA liquid containing pure water is shaken off and dried. As a result, generation of particles such as watermarks on the surface of the wafer W can be suppressed.

  As mentioned above, although embodiment by this invention has been described, naturally, various deformation | transformation are also possible within the range of the summary of this invention. Hereinafter, typical modifications will be described.

  In the present embodiment, the example in which the wafer W is cleaned with the DHF solution has been described. However, the chemical solution used for cleaning the chemical solution is not limited to this, and an arbitrary chemical solution may be used. it can.

  Moreover, in this Embodiment, although the example using pure water as a rinse liquid was demonstrated, as a rinse liquid to be used, it is not restricted to a pure water.

  In the present embodiment, an example in which an IPA liquid is used as a drying liquid has been described. However, the drying liquid to be used is not limited to IPA. For example, a highly volatile organic solvent may be used as the drying liquid. Further, the heated IPA liquid may be supplied to the wafer W. In this case, evaporation of the IPA liquid can be promoted.

  In the above description, the substrate processing method according to the present invention, the recording medium on which the computer program for executing the substrate processing method is recorded, and the substrate processing apparatus are applied to the cleaning process of the semiconductor wafer W. Show. However, the present invention is not limited to this, and the present invention can be applied to cleaning various substrates such as an LCD substrate or a CD substrate.

  In the chemical solution processing step and the rinse processing step, an example is shown in which the wafer W is rotated. However, the present invention is not limited thereto, and if the wafer W is covered with the liquid in the chemical solution processing step and the rinse processing step, the wafer W is not necessarily limited. There is no need to rotate the.

  Next, a modification of the present invention will be described with reference to FIGS. 6 (a), (b), (c), and (d). 6 (a), (b), (c), and (d) differ only in the configuration of the fourth drying process among the drying processes, and the other configurations are the implementations shown in FIGS. The form is substantially the same.

  In the modification of the present invention shown in FIGS. 6A, 6B, 6C, and 6D, the same parts as those in the embodiment shown in FIGS. .

In the above-described embodiment, the example in which the supply of the IPA liquid to the wafer W is stopped at the start of the fourth drying process is shown. However, in this modification, the drying liquid on-off valve 63 remains open. During the fourth drying process, the IPA liquid is continuously supplied to the wafer W (FIGS. 6A to 6B). Then, an inert gas such as nitrogen gas (N ₂ gas) is supplied to the wafer W from the middle of the fourth drying process.

  That is, even if the third drying process is completed, the wafer W continues to rotate at the third rotation speed during the fourth drying process. At the start of the fourth drying process, the drying liquid nozzle 31 and the gas nozzle 32 are in the center of the wafer W, and the IPA liquid is supplied from the drying liquid nozzle 31 to the center of the wafer W. At this time, supply of nitrogen gas from the gas nozzle 32 is stopped (FIG. 6A).

  Next, while rotating the wafer at the third rotational speed, the drying liquid nozzle 31 and the gas nozzle 32 are moved from the central portion of the wafer W toward the peripheral portion at a relatively slow first speed (1.2 mm / s) (FIG. 6 (b)).

  In this case, the IPA liquid is supplied from the drying liquid nozzle 31 to the wafer W, but the supply of nitrogen gas from the gas nozzle 32 is stopped. The drying liquid nozzle 31 is located in front of the gas nozzle 32 in the moving direction. The drying liquid nozzle 31 reaches a position 15 mm away from the center of the wafer W. Even if the wafer W is rotated, the centrifugal force is small in the vicinity of the center of the wafer W, so that the force to shake off the IPA liquid is not so large, and the IPA liquid may remain on the wafer W.

  At this stage, the IPA liquid on the wafer W is gradually pushed out toward the peripheral edge by the IPA liquid supplied from the dry liquid nozzle 31 by moving the dry liquid nozzle 31 and the gas nozzle 32 at the first speed. it can.

  On the other hand, when nitrogen gas is supplied from the gas nozzle 32 to the wafer W at this stage, nitrogen gas is blown onto the IPA liquid remaining on the wafer W, and the IPA liquid on the wafer W has a non-uniform film thickness. As a result, an appropriate drying process cannot be performed.

  On the other hand, according to the present invention, since the nitrogen gas is not supplied from the gas nozzle 32 at this stage, the IPA liquid does not have a non-uniform film thickness.

  In this state, the gas nozzle 32 moves away to a position 15 mm away from the center of the wafer W (FIG. 6C).

  Further, when the drying liquid nozzle 31 and the gas nozzle 32 move to the peripheral edge side of the wafer W and the gas nozzle 32 reaches a position exceeding 15 mm from the central portion of the wafer W, that is, the gas nozzle 32 has a peripheral edge with respect to the central portion of the wafer W. When reaching the gap between the two parts, nitrogen gas is first supplied from the gas nozzle 32 to the wafer W (FIG. 6D).

  At this time, the drying liquid nozzle 31 is located at a position exceeding 30 mm from the center of the wafer W. Thereafter, the drying liquid nozzle 31 and the gas nozzle 32 move toward the peripheral edge of the wafer W at a second speed (8 mm / s) larger than the first speed (1.2 mm / s).

  When a certain distance from the center of the wafer W is reached, a certain amount of centrifugal force acts on the rotating wafer W. Therefore, the IPA liquid remaining on the wafer W can be more reliably extruded toward the peripheral edge by the centrifugal force accompanying the rotation of the wafer W and the nitrogen gas supplied from the gas nozzle 32.

  Further, as shown in FIG. 6D, at a position away from the center of the wafer W to some extent, a large centrifugal force acts on the wafer W as it is rotated as described above, so that the IPA liquid remaining on the wafer W is retained. Therefore, even if nitrogen gas is blown from the gas nozzle 32 to the wafer W, the IPA liquid on the wafer W does not have a non-uniform film thickness.

  As described above, the IPA liquid is continuously applied from the drying liquid nozzle 31 onto the wafer W while the drying liquid nozzle 31 and the gas nozzle 32 are moved from the center to the peripheral edge of the wafer W during the fourth drying process. In addition, nitrogen gas is supplied from the gas nozzle 32 onto the wafer W during the movement of the drying liquid nozzle 31 and the gas nozzle 32.

  For this reason, since no IPA liquid remains on the wafer W, generation of particles due to the IPA liquid can be suppressed.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 10 Processing container 11 Loading / unloading 12 Shutter 20 Spin chuck 21 Rotating plate 22 Holding member 25 Rotation drive part 26 Rotation drive shaft 30 Cleaning liquid nozzle 31 Drying liquid nozzle 32 Gas nozzle 33 Nozzle arm 34 Guide rail 35 Nozzle drive part 36 Connecting member 37 Elevating drive unit 38 Elevating shaft 40 Chemical solution supply mechanism 43 DHF supply line 44 DHF supply source 46 DHF opening / closing valve 50 Rinsing solution supply mechanism 51 Rinsing solution supply line 52 Rinsing solution supply source 53 Rinsing solution opening / closing valve 60 Drying solution supply mechanism 61 Drying liquid supply line 62 Drying liquid supply source 63 Drying liquid on-off valve 70 Inert gas supply mechanism 71 Gas supply line 72 Gas supply source 73 Gas on-off valve 80 Control unit 81 Input / output device 82 Recording medium

Claims (13)

A chemical treatment process for supplying a chemical to the substrate;
After the chemical treatment process, a rinse treatment process for supplying a rinse liquid to the substrate,
After the rinsing process, a drying process for drying the substrate,
The drying process includes a first drying process that supplies a drying liquid to the substrate while rotating the substrate at a first rotation speed, and a first rotation of the substrate while supplying the drying liquid after the first drying process. After the second drying process step of decelerating to a second rotational speed lower than the number, and after the second drying process step, the rotational speed of the substrate is increased from the second rotational speed to the third rotational speed while supplying the drying liquid to the substrate. And a third drying process step. The drying processing step further includes a fourth drying processing step of rotating the substrate and shaking off the drying liquid on the substrate after the third drying processing step,
The substrate processing method according to claim 1, wherein the supply of the drying liquid is stopped at the start of the fourth drying step. The drying processing step further includes a fourth drying processing step of rotating the substrate and shaking off the drying liquid on the substrate after the third drying processing step,
In the fourth drying step, the drying liquid is continuously supplied to the substrate, and the inert gas is supplied to the substrate.
The supply position of the drying liquid to the substrate is moved from the central portion of the substrate toward the peripheral portion, and the supply position of the inert gas is moved from between the central portion and the peripheral portion of the substrate toward the peripheral portion. The substrate processing method according to claim 1.   The substrate processing method according to claim 3, wherein the supply position of the drying liquid is located forward of the movement direction with respect to the supply position of the inert gas.   In the fourth drying step, the supply position of the drying liquid moves at the first speed while only the drying liquid is supplied to the substrate, and the supply of the drying liquid and the inert gas is performed while the drying liquid and the inert gas are supplied to the substrate. The substrate processing method according to claim 4, wherein the position is moved at a second speed larger than the first speed. In the rinsing process, a rinsing liquid is supplied to the rotating substrate,
2. The substrate processing method according to claim 1, wherein the first rotation number of the substrate in the first drying process step of the drying process step is larger than the rotation number of the substrate in the rinsing process step. A recording medium on which a computer program for executing a substrate processing method is recorded,
The substrate processing method is
A chemical treatment process for supplying a chemical to the substrate;
After the chemical treatment process, a rinse treatment process for supplying a rinse liquid to the substrate,
After the rinsing process, a drying process for drying the substrate,
The drying process includes a first drying process that supplies a drying liquid to the substrate while rotating the substrate at a first rotation speed, and a first rotation of the substrate while supplying the drying liquid after the first drying process. After the second drying process step of decelerating to a second rotational speed lower than the number, and after the second drying process step, the rotational speed of the substrate is increased from the second rotational speed to the third rotational speed while supplying the drying liquid to the substrate. And a third drying treatment step. A rotatable substrate holding part for holding the substrate;
A rotation drive unit for rotating the substrate holding unit;
A chemical solution supply mechanism for supplying a chemical solution to the substrate held by the substrate holding unit;
A rinsing liquid supply mechanism for supplying a rinsing liquid to the substrate held by the substrate holder;
A drying liquid supply mechanism for supplying a drying liquid to the substrate held by the substrate holding unit;
A rotation drive unit, a chemical liquid supply mechanism, a rinsing liquid supply mechanism and a control unit for controlling the dry liquid supply mechanism,
The control unit controls the rotation drive unit, the chemical liquid supply mechanism, the rinse liquid supply mechanism, and the dry liquid supply mechanism,
A chemical treatment process for supplying a chemical to the substrate;
After the chemical treatment process, a rinse treatment process for supplying a rinse liquid to the substrate,
After the rinsing process, a drying process for drying the substrate,
The drying process includes a first drying process that supplies a drying liquid to the substrate while rotating the substrate at a first rotation speed, and a first rotation of the substrate while supplying the drying liquid after the first drying process. After the second drying process step that rotates at a second rotational speed lower than the number, and after the second drying process step, the rotational speed of the substrate is increased from the second rotational speed to the third rotational speed while supplying the drying liquid to the substrate. A substrate processing apparatus comprising: a third drying processing step. The drying processing step further includes a fourth drying processing step of rotating the substrate and shaking off the drying liquid on the substrate after the third drying processing step,
9. The substrate processing apparatus according to claim 8, wherein supply of the drying liquid is stopped at the start of the fourth drying process. In the fourth drying step, the drying liquid is continuously supplied to the substrate and the inert gas is supplied.
The supply position of the drying liquid to the substrate is moved from the central portion of the substrate toward the peripheral portion, and the supply position of the inert gas is moved from between the central portion and the peripheral portion of the substrate toward the peripheral portion. The substrate processing apparatus according to claim 9.   The substrate processing apparatus according to claim 10, wherein the supply position of the drying liquid is positioned forward in the movement direction with respect to the supply position of the inert gas.   In the fourth drying step, the supply position of the drying liquid moves at the first speed while only the drying liquid is supplied to the substrate, and the supply of the drying liquid and the inert gas is performed while the drying liquid and the inert gas are supplied to the substrate. The substrate processing apparatus according to claim 11, wherein the position is moved at a second speed greater than the first speed. In the rinsing process, a rinsing liquid is supplied to the rotating substrate,
9. The substrate processing apparatus according to claim 8, wherein the first rotation number of the substrate in the first drying process step of the drying process step is larger than the rotation number of the substrate in the rinsing process step.

Images