JP2016012713A5 - - Google Patents
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- JP2016012713A5 JP2016012713A5 JP2015004623A JP2015004623A JP2016012713A5 JP 2016012713 A5 JP2016012713 A5 JP 2016012713A5 JP 2015004623 A JP2015004623 A JP 2015004623A JP 2015004623 A JP2015004623 A JP 2015004623A JP 2016012713 A5 JP2016012713 A5 JP 2016012713A5
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- resin film
- film layer
- semiconductor device
- manufacturing
- filler
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Claims (22)
フィラを含む第一の樹脂フィルム層と、フィラ含有率が前記第一の樹脂フィルム層のフィラ含有率より低い第二の樹脂フィルム層とを積層し、
前記第一の樹脂フィルム層の初期粘度が、前記第二の樹脂フィルム層の初期粘度より大きいことを特徴とする樹脂フィルム。 A resin film for collectively resin-molding a mold in which a plurality of semiconductor chips are arranged,
Laminating a first resin film layer containing filler and a second resin film layer having a filler content lower than the filler content of the first resin film layer,
An initial viscosity of the first resin film layer is larger than an initial viscosity of the second resin film layer.
前記第一の樹脂フィルム層が、複数の平均粒子径からなるフィラを含有することを特徴とする樹脂フィルム。 In the resin film of Claim 1,
Said 1st resin film layer contains the filler which consists of a some average particle diameter, The resin film characterized by the above-mentioned.
前記第一の樹脂フィルム層に含有する複数の平均粒子径からなるフィラ径の第一のフィラ径Ｄ１と第二のフィラ径Ｄ２の粒径比Ｄ２／Ｄ１が、０．１５４７より小さいことを特徴とする樹脂フィルム。 In the resin film according to claim 2,
The particle diameter ratio D2 / D1 of the first filler diameter D1 and the second filler diameter D2 of the filler diameter composed of a plurality of average particle diameters contained in the first resin film layer is smaller than 0.1547 Resin film.
前記第一の樹脂フィルム層が、異なるアスペクト比を持つフィラを含有することを特徴とする樹脂フィルム。 In the resin film of Claim 1,
The resin film, wherein the first resin film layer contains fillers having different aspect ratios.
前記第一の樹脂フィルム層のフィラ含有量が、全体のフィラ含有量を１００とした場合に５０の割合以上であり、かつ、前記第一の樹脂フィルム層の初期粘度と前記第二の樹脂フィルム層の初期粘度の商が１０以上であることを特徴とする樹脂フィルム。 In the resin film of Claim 1,
The filler content of the first resin film layer is 50 or more when the total filler content is 100, and the initial viscosity of the first resin film layer and the second resin film A resin film, wherein the quotient of the initial viscosity of the layer is 10 or more.
前記フィラが、球状またはフレーク状または繊維状である樹脂フィルム。 In the resin film of Claim 1,
A resin film in which the filler is spherical, flaky, or fibrous.
樹脂フィルムの形状を略円形とし、前記第一の樹脂フィルム層の直径が、前記第二の樹脂フィルム層の直径より大きいことを特徴とする樹脂フィルム。 In the resin film of Claim 1,
A resin film characterized in that the shape of the resin film is substantially circular, and the diameter of the first resin film layer is larger than the diameter of the second resin film layer.
樹脂フィルムの形状を方形とし、前記第一の樹脂フィルム層の幅が、前記第二の樹脂フィルム層の幅より大きいことを特徴とする樹脂フィルム。 In the resin film of Claim 1,
A resin film, wherein the resin film has a square shape, and the width of the first resin film layer is larger than the width of the second resin film layer.
前記第一の樹脂フィルム層の肉厚が、前記第二の樹脂フィルム層の肉厚より大きいことを特徴とする樹脂フィルム。 In the resin film of Claim 1,
The resin film, wherein the thickness of the first resin film layer is larger than the thickness of the second resin film layer.
前記第一の樹脂フィルム層の粘度と前記第二の樹脂フィルム層の粘度の比率が１０〜１００であり、前記第一の樹脂フィルム層の半径をＬ１、前記第一の樹脂フィルム層の肉厚をＴ１、前記第二の樹脂フィルム層の半径をＬ２、前記第二の樹脂フィルム層の肉厚をＴ２とした場合、（Ｌ１/Ｌ２）＊（Ｔ１／Ｔ２）≧１．１２となることを特徴とする樹脂フィルム。 In the resin film according to claim 7 or 9,
The ratio of the viscosity of the first resin film layer to the viscosity of the second resin film layer is 10 to 100, the radius of the first resin film layer is L1, and the thickness of the first resin film layer the T1, a radius of the second resin film layer L2, if the thickness of the second resin film layer was T2, to be a (L1 / L2) * (T1 / T2) ≧ 1.12 Characteristic resin film.
半導体チップの上面において、前記第一の樹脂フィルム層の厚みが前記第二の樹脂フィルム層の厚みよりも大きいことを特徴とする半導体装置。 The semiconductor device according to claim 11,
The upper surface of the semi-conductor chip, a semiconductor device wherein the thickness of the first resin film layer is greater than the thickness of the second resin film layer.
半導体チップの周囲を囲む樹脂層が、フィラ含有率の少ない前記第二の樹脂層であることを特徴とする半導体装置。 The semiconductor device according to claim 11,
Resin layer surrounding the semi-conductor chip, and wherein a said low filler content second resin layer der Turkey.
加熱状態で、前記金型を押圧することにより、前記樹脂フィルムを溶融し前記半導体チップを樹脂モールドするステップと、
前記半導体チップ毎にダイシングして個片化するステップと
を備える半導体装置の製造方法であって、
前記樹脂フィルムとして、フィラを含む第一の樹脂フィルム層と、フィラ含有率が前記第一の樹脂フィルム層のフィラ含有率より低い第二の樹脂フィルム層とを積層したものであって、前記第一の樹脂フィルム層の初期粘度が、 前記第二の樹脂フィルム層の初期粘度より大きいものを用いることを特徴とする半導体装置の製造方法。 Placing a plurality of semiconductor chips in the mold, and placing a resin film on the semiconductor chips;
Pressing the mold in a heated state to melt the resin film and resin mold the semiconductor chip; and
A method of manufacturing a semiconductor device comprising the steps of dicing each semiconductor chip into pieces,
As the resin film, a first resin film layer containing filler and a second resin film layer having a filler content lower than the filler content of the first resin film layer are laminated, A method of manufacturing a semiconductor device, wherein an initial viscosity of one resin film layer is larger than an initial viscosity of the second resin film layer.
前記樹脂フィルムの前記第一の樹脂フィルム層が、複数の平均粒子径からなるフィラを含むことを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 14,
The method of manufacturing a semiconductor device, wherein the first resin film layer of the resin film includes a filler having a plurality of average particle diameters.
前記第一の樹脂フィルム層が、異なるアスペクト比を持つフィラを含有することを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 14,
The method for manufacturing a semiconductor device, wherein the first resin film layer contains fillers having different aspect ratios.
前記樹脂フィルムの前記第一の樹脂フィルム層のフィラ含有量が、全体のフィラ含有量を１００とした場合に５０の割合以上であり、かつ、前記第一の樹脂フィルム層の初期粘度と前記第二の樹脂フィルム層の初期粘度の商が１０以上であることを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 14,
The filler content of the first resin film layer of the resin film is 50 or more when the total filler content is 100, and the initial viscosity of the first resin film layer and the first A method of manufacturing a semiconductor device, wherein the quotient of the initial viscosity of the second resin film layer is 10 or more.
前記樹脂フィルムのフィラが、球状またはフレーク状または繊維状である半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 14,
A method for manufacturing a semiconductor device, wherein the filler of the resin film is spherical, flaky, or fibrous.
樹脂フィルムの形状を略円形とし、前記第一の樹脂フィルム層の直径が、前記第二の樹脂フィルム層の直径より大きいことを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 14,
A method of manufacturing a semiconductor device, wherein the resin film has a substantially circular shape, and the diameter of the first resin film layer is larger than the diameter of the second resin film layer.
樹脂フィルムの形状を方形とし、前記第一の樹脂フィルム層の幅が、前記第二の樹脂フィルム層の幅より大きいことを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 14,
A method of manufacturing a semiconductor device, wherein a resin film has a square shape, and the width of the first resin film layer is larger than the width of the second resin film layer.
前記第一の樹脂フィルム層の肉厚が、前記第二の樹脂フィルム層の肉厚より大きいことを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 14,
A method of manufacturing a semiconductor device, wherein the thickness of the first resin film layer is larger than the thickness of the second resin film layer.
前記第一の樹脂フィルム層の粘度と前記第二の樹脂フィルム層の粘度の比率が１０〜１００であり、前記第一の樹脂フィルム層の半径をＬ１、前記第一の樹脂フィルム層の肉厚をＴ１、前記第二の樹脂フィルム層の半径をＬ２、前記第二の樹脂フィルム層の肉厚をＴ２とした場合、（Ｌ１/Ｌ２）＊（Ｔ１／Ｔ２）≧１．１２となることを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 14,
The ratio of the viscosity of the first resin film layer to the viscosity of the second resin film layer is 10 to 100, the radius of the first resin film layer is L1, and the thickness of the first resin film layer the T1, a radius of the second resin film layer L2, if the thickness of the second resin film layer was T2, to be a (L1 / L2) * (T1 / T2) ≧ 1.12 A method of manufacturing a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015004623A JP2016012713A (en) | 2014-06-05 | 2015-01-14 | Resin film, semiconductor device and semiconductor device manufacturing method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014116766 | 2014-06-05 | ||
| JP2014116766 | 2014-06-05 | ||
| JP2015004623A JP2016012713A (en) | 2014-06-05 | 2015-01-14 | Resin film, semiconductor device and semiconductor device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016012713A JP2016012713A (en) | 2016-01-21 |
| JP2016012713A5 true JP2016012713A5 (en) | 2017-04-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015004623A Pending JP2016012713A (en) | 2014-06-05 | 2015-01-14 | Resin film, semiconductor device and semiconductor device manufacturing method |
Country Status (1)
| Country | Link |
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| JP (1) | JP2016012713A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6788344B2 (en) * | 2015-12-21 | 2020-11-25 | 京セラ株式会社 | Electronic components and manufacturing methods for electronic components |
| KR102440947B1 (en) * | 2017-03-31 | 2022-09-05 | 쇼와덴코머티리얼즈가부시끼가이샤 | Encapsulation film, manufacturing method of electronic component device and electronic component device |
| JP7211757B2 (en) * | 2018-10-22 | 2023-01-24 | 新光電気工業株式会社 | wiring board |
| CN111370337B (en) * | 2020-03-18 | 2022-03-18 | 深圳杰微芯片科技有限公司 | Method for reducing package warpage |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3378374B2 (en) * | 1993-09-14 | 2003-02-17 | 株式会社東芝 | Method for manufacturing resin-encapsulated semiconductor device, resin-encapsulated semiconductor device, and resin sheet for encapsulation |
| JP2011187877A (en) * | 2010-03-11 | 2011-09-22 | Panasonic Corp | Semiconductor device, and method of manufacturing the same |
| JP2014056924A (en) * | 2012-09-12 | 2014-03-27 | Hitachi Chemical Co Ltd | Semiconductor device manufacturing method and thermosetting resin composition used therefor, and semiconductor device obtained by those |
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- 2015-01-14 JP JP2015004623A patent/JP2016012713A/en active Pending
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