JP2016009813A - 固体撮像装置、電子機器、及び、固体撮像装置の製造方法 - Google Patents

固体撮像装置、電子機器、及び、固体撮像装置の製造方法 Download PDF

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Publication number
JP2016009813A
JP2016009813A JP2014130998A JP2014130998A JP2016009813A JP 2016009813 A JP2016009813 A JP 2016009813A JP 2014130998 A JP2014130998 A JP 2014130998A JP 2014130998 A JP2014130998 A JP 2014130998A JP 2016009813 A JP2016009813 A JP 2016009813A
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Prior art keywords
color filter
color
partition wall
solid
imaging device
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Pending
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JP2014130998A
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English (en)
Japanese (ja)
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JP2016009813A5 (enExample
Inventor
雄飛 寄門
Yuhi Yorikado
雄飛 寄門
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Sony Corp
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Sony Corp
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Priority to JP2014130998A priority Critical patent/JP2016009813A/ja
Priority to PCT/JP2015/063733 priority patent/WO2015198733A1/ja
Priority to US15/315,441 priority patent/US10063816B2/en
Publication of JP2016009813A publication Critical patent/JP2016009813A/ja
Publication of JP2016009813A5 publication Critical patent/JP2016009813A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/003—Light absorbing elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/045—Picture signal generators using solid-state devices having a single pick-up sensor using mosaic colour filter
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
JP2014130998A 2014-06-26 2014-06-26 固体撮像装置、電子機器、及び、固体撮像装置の製造方法 Pending JP2016009813A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014130998A JP2016009813A (ja) 2014-06-26 2014-06-26 固体撮像装置、電子機器、及び、固体撮像装置の製造方法
PCT/JP2015/063733 WO2015198733A1 (ja) 2014-06-26 2015-05-13 固体撮像装置、電子機器、及び、固体撮像装置の製造方法
US15/315,441 US10063816B2 (en) 2014-06-26 2015-05-13 Solid state imaging device, electronic apparatus, and method for manufacturing solid state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014130998A JP2016009813A (ja) 2014-06-26 2014-06-26 固体撮像装置、電子機器、及び、固体撮像装置の製造方法

Related Child Applications (1)

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JP2018042278A Division JP2018133575A (ja) 2018-03-08 2018-03-08 固体撮像装置、電子機器、及び、固体撮像装置の製造方法

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JP2016009813A5 JP2016009813A5 (enExample) 2017-03-09

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US (1) US10063816B2 (enExample)
JP (1) JP2016009813A (enExample)
WO (1) WO2015198733A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2017138370A1 (ja) * 2016-02-09 2018-11-29 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JPWO2021090727A1 (enExample) * 2019-11-07 2021-05-14

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EP3385987A4 (en) * 2015-12-03 2019-11-27 Sony Semiconductor Solutions Corporation SOLID BODY IMAGING ELEMENT AND IMAGING DEVICE
JP2018186151A (ja) * 2017-04-25 2018-11-22 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
CN112087559B (zh) * 2019-06-13 2021-11-30 华为技术有限公司 图像传感器、图像拍摄装置和方法
KR102704191B1 (ko) 2019-10-23 2024-09-05 삼성전자주식회사 이미지 센서
JP2021086931A (ja) * 2019-11-28 2021-06-03 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
US12382743B2 (en) 2020-01-16 2025-08-05 Sony Semiconductor Solutions Corporation Solid-state imaging device with enhanced pixel structure and light shielding region for improving image quality
US11412190B2 (en) * 2020-08-03 2022-08-09 Omnivision Technologies, Inc. Image sensor with subtractive color filter pattern
CN112054131B (zh) * 2020-09-14 2022-09-20 京东方科技集团股份有限公司 显示面板、显示装置及显示设备
US11538839B2 (en) * 2020-11-10 2022-12-27 Visera Technologies Company Limited Solid-state image sensor including patterned structure for decreasing petal flares
US12148777B2 (en) * 2021-05-17 2024-11-19 Omnivision Technologies, Inc. Image sensor with spectral-filter-based crosstalk suppression
US12469325B2 (en) * 2022-04-27 2025-11-11 Omnivision Technologies, Inc. Fingerprint sensor with wafer-bonded microlens array

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JP2010288150A (ja) * 2009-06-12 2010-12-24 Toshiba Corp 固体撮像装置
JP2013115335A (ja) * 2011-11-30 2013-06-10 Sony Corp 固体撮像素子およびその製造方法、電子機器、並びに固体撮像素子用組成物
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Patent Citations (8)

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JP2005340299A (ja) * 2004-05-24 2005-12-08 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法並びにカメラ
JP2006295125A (ja) * 2005-01-18 2006-10-26 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法並びにカメラ
JP2009111225A (ja) * 2007-10-31 2009-05-21 Fujifilm Corp 固体撮像素子及びその製造方法
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JP2010288150A (ja) * 2009-06-12 2010-12-24 Toshiba Corp 固体撮像装置
JP2013115335A (ja) * 2011-11-30 2013-06-10 Sony Corp 固体撮像素子およびその製造方法、電子機器、並びに固体撮像素子用組成物
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2017138370A1 (ja) * 2016-02-09 2018-11-29 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP7062955B2 (ja) 2016-02-09 2022-05-09 ソニーグループ株式会社 固体撮像素子およびその製造方法、並びに電子機器
JPWO2021090727A1 (enExample) * 2019-11-07 2021-05-14
WO2021090727A1 (ja) * 2019-11-07 2021-05-14 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
CN114556906A (zh) * 2019-11-07 2022-05-27 索尼半导体解决方案公司 摄像装置和电子设备
US12273638B2 (en) 2019-11-07 2025-04-08 Sony Semiconductor Solutions Corporation Imaging device and electronic apparatus

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US10063816B2 (en) 2018-08-28
US20170201726A1 (en) 2017-07-13
WO2015198733A1 (ja) 2015-12-30

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