JP2016003181A5 - - Google Patents

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JP2016003181A5
JP2016003181A5 JP2015117569A JP2015117569A JP2016003181A5 JP 2016003181 A5 JP2016003181 A5 JP 2016003181A5 JP 2015117569 A JP2015117569 A JP 2015117569A JP 2015117569 A JP2015117569 A JP 2015117569A JP 2016003181 A5 JP2016003181 A5 JP 2016003181A5
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Japan
Prior art keywords
brittle material
material substrate
scribe
scribing method
scribe line
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JP2015117569A
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Japanese (ja)
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JP2016003181A (en
JP6551661B2 (en
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Priority claimed from TW103121259A external-priority patent/TWI527674B/en
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Publication of JP2016003181A publication Critical patent/JP2016003181A/en
Publication of JP2016003181A5 publication Critical patent/JP2016003181A5/ja
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Publication of JP6551661B2 publication Critical patent/JP6551661B2/en
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Claims (10)

第1の表面及び前記第1の表面に対する第2の表面を含む脆性材料基板にスクライブラインを形成するスクライブ方法であって、前記スクライブ方法は、
(A)少なくとも第1の方向及び前記第1の方向と平行でない第2の方向のそれぞれに沿って延伸する複数の分断予定線を、前記脆性材料基板の前記第1の表面に設定する工程と、
(B)スクライブユニットにより、設定された複数の分断予定線に沿ってスクライブし、前記スクライブユニットに可変荷重をかけることにより、前記第1の方向において少なくとも1本の第1のスクライブラインを形成し、及び前記第1のスクライブラインと交差する第2の方向において少なくとも一本の第2のスクライブラインを形成する工程と、を含み、
前記少なくとも一本の第1のスクライブラインと前記少なくとも一本の第2のスクライブラインは交差して少なくとも1つの交点を形成し、
(C)前記少なくとも一本の第1のスクライブラインを形成する際に前記スクライブユニットにかかる荷重は、前記スクライブユニットが前記少なくとも1つの交点の近辺領域にない時の荷重がP1で、前記スクライブユニットが前記少なくとも1つの交点の近辺領域にある時の荷重がM1であり、
(D)前記少なくとも一本の第2のスクライブラインをスクライブする際に前記スクライブユニットにかかる荷重は、前記スクライブユニットが前記少なくとも1つの交点の近辺領域にない時の荷重がP2で、前記スクライブユニットが前記少なくとも1つの交点の近辺領域にある時の荷重がM2であり、かつ、
(E)M1、M2は共に、少なくともP1とP2よりも小さく、かつ、0ではない、脆性材料基板のスクライブ方法。
A scribing method for forming a scribe line on a brittle material substrate including a first surface and a second surface relative to the first surface, wherein the scribing method comprises:
(A) setting a plurality of planned dividing lines extending along each of at least a first direction and a second direction not parallel to the first direction on the first surface of the brittle material substrate; ,
(B) The scribing unit scribes along a plurality of planned dividing lines and applies a variable load to the scribe unit, thereby forming at least one first scribe line in the first direction. And forming at least one second scribe line in a second direction intersecting the first scribe line, and
The at least one first scribe line and the at least one second scribe line intersect to form at least one intersection;
(C) The load applied to the scribe unit when forming the at least one first scribe line is P1 when the scribe unit is not in the vicinity of the at least one intersection, and the scribe unit Is in the vicinity of the at least one intersection, the load is M1;
(D) The load applied to the scribe unit when scribing the at least one second scribe line is P2 when the scribe unit is not in the vicinity of the at least one intersection, and the scribe unit And the load when M is in the vicinity of the at least one intersection is M2, and
(E) A scribing method for a brittle material substrate in which both M1 and M2 are at least smaller than P1 and P2 and not 0.
P1=P2である、請求項1に記載の脆性材料基板のスクライブ方法。   The brittle material substrate scribing method according to claim 1, wherein P1 = P2. P1>P2である、請求項1に記載の脆性材料基板のスクライブ方法。   The brittle material substrate scribing method according to claim 1, wherein P1> P2. P1<P2である、請求項1に記載の脆性材料基板のスクライブ方法。   The brittle material substrate scribing method according to claim 1, wherein P1 <P2. 前記交点の近辺領域が、2本の交差する前記第1のスクライブラインと前記第2のスクライブラインから0.2mm〜1.0mm離れた平行線により定義される菱形領域である、請求項1に記載の脆性材料基板のスクライブ方法。   The region near the intersection is a rhombus region defined by two intersecting first scribe lines and parallel lines separated from the second scribe line by 0.2 mm to 1.0 mm. The brittle material substrate scribing method described. 前記脆性材料基板の厚さが0.025〜40mmである、請求項1に記載の脆性材料基板のスクライブ方法。   The brittle material substrate scribing method according to claim 1, wherein the brittle material substrate has a thickness of 0.025 to 40 mm. 前記脆性材料基板が、厚さ0.3〜0.7mmの液晶基板である、請求項6に記載の脆性材料基板のスクライブ方法。   The brittle material substrate scribing method according to claim 6, wherein the brittle material substrate is a liquid crystal substrate having a thickness of 0.3 to 0.7 mm. P1とP2の範囲が0.05MPa〜0.11MPaの間にある、請求項1に記載の脆性材料基板のスクライブ方法。   The brittle material substrate scribing method according to claim 1, wherein the range of P1 and P2 is between 0.05 MPa and 0.11 MPa. M1の範囲が0.05MPa〜0.07MPaの間にあり、M2の範囲が0.05MPa〜0.09MPaの間にある、請求項1に記載の脆性材料基板のスクライブ方法。   The brittle material substrate scribing method according to claim 1, wherein the range of M1 is between 0.05 MPa and 0.07 MPa, and the range of M2 is between 0.05 MPa and 0.09 MPa. 請求項1〜9のいずれか一項に記載の脆性材料基板のスクライブ方法により、脆性材料基板をスクライブする、脆性材料基板のスクライブ装置。   A brittle material substrate scribing apparatus for scribing a brittle material substrate by the brittle material substrate scribing method according to claim 1.
JP2015117569A 2014-06-19 2015-06-10 Method and apparatus for scribing brittle material substrate Expired - Fee Related JP6551661B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW103121259A TWI527674B (en) 2014-06-19 2014-06-19 Method and apparatus for scribing brittle material substrate
TW103121259 2014-06-19

Publications (3)

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JP2016003181A JP2016003181A (en) 2016-01-12
JP2016003181A5 true JP2016003181A5 (en) 2018-07-05
JP6551661B2 JP6551661B2 (en) 2019-07-31

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JP2015117569A Expired - Fee Related JP6551661B2 (en) 2014-06-19 2015-06-10 Method and apparatus for scribing brittle material substrate

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JP (1) JP6551661B2 (en)
KR (1) KR20150145711A (en)
CN (1) CN105196423B (en)
TW (1) TWI527674B (en)

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EP3361839A1 (en) * 2017-02-14 2018-08-15 Infineon Technologies AG Multiple substrate and method for its fabrication
CN107538630A (en) * 2017-07-14 2018-01-05 合肥文胜新能源科技有限公司 A kind of device for silicon chip cutting
CN107379292B (en) * 2017-09-15 2019-07-02 京东方科技集团股份有限公司 Cutting method, system and the storage medium of display panel
TWI774883B (en) * 2017-12-26 2022-08-21 日商三星鑽石工業股份有限公司 Scribing method and scribing device for bonding substrates
JP2021154502A (en) * 2020-03-25 2021-10-07 三星ダイヤモンド工業株式会社 Breaking method of brittle material substrate and substrate processing device

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JP2000280234A (en) * 1999-01-28 2000-10-10 Canon Inc Method for cutting of substrate
CN1863740B (en) * 2001-07-18 2012-04-25 三星钻石工业股份有限公司 Scribe head, scribe apparatus and scribe method using the scribe head
JP2003212579A (en) * 2002-01-24 2003-07-30 Nakamura Tome Precision Ind Co Ltd Cross-scribing method of hard brittle plate and apparatus thereof
JP5076662B2 (en) * 2007-06-13 2012-11-21 澁谷工業株式会社 Method and apparatus for cleaving brittle materials
JP5139852B2 (en) * 2008-03-17 2013-02-06 三星ダイヤモンド工業株式会社 Scribing apparatus and scribing method
JP2011088382A (en) * 2009-10-23 2011-05-06 Mitsuboshi Diamond Industrial Co Ltd Breaking device and breaking method
JP2011155151A (en) * 2010-01-27 2011-08-11 Mitsuboshi Diamond Industrial Co Ltd Scribing apparatus for thin-film solar cell
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JP5156080B2 (en) * 2010-11-05 2013-03-06 三星ダイヤモンド工業株式会社 Method for scribing bonded substrates
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