JP2015529002A - 透明化合物半導体及びその製造方法 - Google Patents
透明化合物半導体及びその製造方法 Download PDFInfo
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 91
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 238000002834 transmittance Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 229910002367 SrTiO Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims description 2
- 239000003570 air Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000255 optical extinction spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 150000001768 cations Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
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Abstract
Description
Claims (15)
- Ba化合物、La化合物及びSn化合物を反応させて製造したBa1−XLaXSnO3(0<x<0.1)の組成を有し、10cm2/V sec以上の電荷移動度を有することを特徴とする透明化合物半導体。
- 上記Ba1−XLaXSnO3は、常温で10cm2/V sec以上の電荷移動度を有することを特徴とする請求項1に記載の透明化合物半導体。
- 上記Ba1−XLaXSnO3は、上記Ba化合物、La化合物及びSn化合物をBa1−XLaXSnO3(0<x<0.1)によって混合した後に500℃〜1500℃で反応させて製造したことを特徴とする請求項2に記載の透明化合物半導体
- 上記Ba1−XLaXSnO3の厚さは、0.4nm〜400nmであることを特徴とする請求項3に記載の透明化合物半導体。
- 上記Ba1−XLaXSnO3は、可視光線帯域で90%以上の光透過率を有することを特徴とする請求項3に記載の透明化合物半導体。
- 上記Ba1−XLaXSnO3は、空気状態で常温〜530℃に温度を昇降させたときに抵抗の変化が2%未満であることを特徴とする請求項3に記載の透明化合物半導体。
- 上記Ba1−XLaXSnO3は、単結晶またはエピタクシャルフィルム形態を有することを特徴とする請求項3に記載の透明化合物半導体。
- Ba化合物、La化合物及びSn化合物を反応させてBa1−XLaXSnO3(0<x<0.1)の組成を有し、10cm2/V sec以上の電荷移動度を有することを特徴とする透明化合物半導体の製造方法。
- 上記Ba1−XLaXSnO3は、常温で10cm2/V sec以上の電荷移動度を有することを特徴とする請求項8に記載の透明化合物半導体の製造方法。
- 上記Ba化合物は、BaCO3またはBaOであり、上記La化合物は、La2O3であり、上記Sn化合物は、SnO2であることを特徴とする請求項9に記載の透明化合物半導体の製造方法。
- 上記Ba化合物、La化合物及びSn化合物をBa1−XLaXSnO3(0<x<0.1)によって混合した後に500℃〜1500℃で反応させて上記Ba1−XLaXSnO3を製造することを特徴とする請求項9に記載の透明化合物半導体の製造方法。
- 上記Ba1−XLaXSnO3をベース基板の上に物理または化学的に蒸着して形成することを特徴とする請求項9に記載の透明化合物半導体の製造方法。
- 上記ベース基板は、格子定数が0.37〜045nmのABO3構造を有するペロブスカイト(perovskite)金属酸化物を含むことを特徴とする請求項12に記載の透明化合物半導体の製造方法。
- 上記ABO3は、SrTiO3、LaAlO3、SrZrO3、BaNbO3のうち1つであることを特徴とする請求項13に記載の透明化合物半導体の製造方法。
- 上記Ba1−XLaXSnO3の厚さは、0.4nm〜400nmであることを特徴とする請求項9に記載の透明化合物半導体の製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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KR20120035582 | 2012-04-05 | ||
KR10-2012-0035582 | 2012-04-05 | ||
KR1020120109812A KR101348271B1 (ko) | 2012-04-05 | 2012-10-04 | 투명 화합물 반도체 및 그의 제조 방법 |
KR10-2012-0109812 | 2012-10-04 | ||
PCT/KR2013/002866 WO2013151378A1 (ko) | 2012-04-05 | 2013-04-05 | 투명 화합물 반도체 및 그의 제조 방법 |
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JP2015529002A true JP2015529002A (ja) | 2015-10-01 |
JP6017016B2 JP6017016B2 (ja) | 2016-10-26 |
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JP2015504502A Expired - Fee Related JP6017016B2 (ja) | 2012-04-05 | 2013-04-05 | 透明化合物半導体及びその製造方法 |
Country Status (5)
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US (1) | US9755025B2 (ja) |
EP (1) | EP2835818A4 (ja) |
JP (1) | JP6017016B2 (ja) |
KR (1) | KR101348271B1 (ja) |
WO (1) | WO2013151378A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11624109B2 (en) | 2017-12-22 | 2023-04-11 | Lg Chem, Ltd. | Method for manufacturing transparent conductive film |
JP7427505B2 (ja) | 2020-03-31 | 2024-02-05 | 三井金属鉱業株式会社 | スパッタリングターゲット材及びその製造方法並びに薄膜 |
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US10886033B2 (en) * | 2017-09-28 | 2021-01-05 | Regents Of The University Of Minnesota | Conductive films |
NL2024408B1 (en) | 2019-12-09 | 2021-08-31 | Univ Twente | Transparent conductive oxide on a substrate |
US11840772B2 (en) | 2021-01-26 | 2023-12-12 | Clemson University Research Foundation | Hydrothermal method for growth of alkaline earth metal stannate bulk single crystals and crystals formed thereby |
KR102619845B1 (ko) * | 2021-12-17 | 2024-01-02 | 국방과학연구소 | 페로브스카이트 전도체를 포함하는 투명 전도성 세라믹 적층체 |
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MY165986A (en) * | 2007-09-25 | 2018-05-21 | First Solar Inc | Photovoltaic devices including heterojunctions |
GB0915376D0 (en) * | 2009-09-03 | 2009-10-07 | Isis Innovation | Transparent conducting oxides |
KR101040138B1 (ko) * | 2009-10-29 | 2011-06-10 | 한국과학기술연구원 | 은 및 iii족 원소에 의해 상호 도핑된 산화아연계 박막의 형성 방법 및 이를 이용하여 형성된 박막 |
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- 2013-04-05 EP EP13772003.3A patent/EP2835818A4/en active Pending
Non-Patent Citations (1)
Title |
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JPN7016000688; H.F.WANG,ET.AL.: 'Transparent and conductive oxide with the perovskite structure:La- and Sb-doped BaSnO3' JOURNAL OF APPLIED PHYSICS 101, 2007, 106105-1, American Institute of Physics * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11624109B2 (en) | 2017-12-22 | 2023-04-11 | Lg Chem, Ltd. | Method for manufacturing transparent conductive film |
JP7427505B2 (ja) | 2020-03-31 | 2024-02-05 | 三井金属鉱業株式会社 | スパッタリングターゲット材及びその製造方法並びに薄膜 |
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Publication number | Publication date |
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US9755025B2 (en) | 2017-09-05 |
JP6017016B2 (ja) | 2016-10-26 |
KR20130113297A (ko) | 2013-10-15 |
WO2013151378A1 (ko) | 2013-10-10 |
EP2835818A4 (en) | 2015-12-02 |
EP2835818A1 (en) | 2015-02-11 |
US20150048282A1 (en) | 2015-02-19 |
KR101348271B1 (ko) | 2014-01-09 |
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