JP2015528646A - シリコン系太陽光電池を回復させる装置および方法 - Google Patents

シリコン系太陽光電池を回復させる装置および方法 Download PDF

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JP2015528646A
JP2015528646A JP2015531617A JP2015531617A JP2015528646A JP 2015528646 A JP2015528646 A JP 2015528646A JP 2015531617 A JP2015531617 A JP 2015531617A JP 2015531617 A JP2015531617 A JP 2015531617A JP 2015528646 A JP2015528646 A JP 2015528646A
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liquid
solar cell
tank
temperature
recovery
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JP2015528646A5 (enExample
Inventor
セバスティアン、デュボワ
ニコラス、アンジャルベール
ジャン−ポール、ガランデ
ピエール、ジドン
フローラン、タネ
ジョルディ、ベルマン
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication of JP2015528646A5 publication Critical patent/JP2015528646A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Prostheses (AREA)
JP2015531617A 2012-09-14 2013-09-16 シリコン系太陽光電池を回復させる装置および方法 Pending JP2015528646A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1202454 2012-09-14
FR1202454A FR2995727B1 (fr) 2012-09-14 2012-09-14 Dispositif et procede de restauration de cellules photovoltaiques a base de silicium
PCT/FR2013/000240 WO2014041260A1 (fr) 2012-09-14 2013-09-16 Dispositif et procede de restauration de cellules solaires photo voltaiques a base de silicium

Publications (2)

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JP2015528646A true JP2015528646A (ja) 2015-09-28
JP2015528646A5 JP2015528646A5 (enExample) 2016-10-13

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JP2015531617A Pending JP2015528646A (ja) 2012-09-14 2013-09-16 シリコン系太陽光電池を回復させる装置および方法

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Country Link
US (1) US9520528B2 (enExample)
EP (1) EP2896075B1 (enExample)
JP (1) JP2015528646A (enExample)
CN (1) CN104737306B (enExample)
FR (1) FR2995727B1 (enExample)
WO (1) WO2014041260A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160005915A1 (en) * 2014-07-03 2016-01-07 Sino-American Silicon Products Inc. Method and apparatus for inhibiting light-induced degradation of photovoltaic device
EP3268982A4 (en) * 2015-03-13 2019-04-24 NewSouth Innovations Pty Limited PROCESS FOR MACHINING A SILICON MATERIAL
DE102015114298A1 (de) 2015-08-27 2017-03-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Stabilisieren einer photovoltaischen Silizium-Solarzelle
CN105449044B (zh) * 2015-12-30 2017-02-01 江南大学 Led硅太阳电池光诱导氢钝化与缺陷修复装置
US20220262973A1 (en) * 2018-07-30 2022-08-18 mPower Technology, Inc. In-situ rapid annealing and operation of solar cells for extreme environment applications
CN109616555B (zh) * 2018-12-17 2020-08-28 中节能太阳能科技（镇江）有限公司 一种提高太阳能电池抗光衰能力的方法和应用
CN112071960B (zh) * 2020-09-30 2025-06-20 正泰新能科技股份有限公司 一种降低太阳能电池光致衰减的处理设备及处理方法
CN112216614B (zh) * 2020-11-09 2024-11-26 秦皇岛可视自动化设备有限公司 一种电子注入装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01100975A (ja) * 1987-10-14 1989-04-19 Sanyo Electric Co Ltd 光起電力装置
JPH02168616A (ja) * 1988-09-30 1990-06-28 Kanegafuchi Chem Ind Co Ltd 薄膜非晶質半導体装置
JPH06204524A (ja) * 1992-12-28 1994-07-22 Canon Inc 太陽電池の損壊箇所の修復方法及びその太陽電池
JP2001189484A (ja) * 1999-10-19 2001-07-10 Hikari Kobayashi シリコン光電変換素子，その製造方法及びその処理方法
JP2002289886A (ja) * 2001-03-27 2002-10-04 Hikari Kobayashi 半導体膜の処理方法，光起電力素子の製造方法及び光起電力素子
US20100243036A1 (en) * 2006-03-21 2010-09-30 Universitat Konstanz Method for Fabricating a Photovolataic Element with Stabilised Efficiency

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3026710A (en) * 1956-10-01 1962-03-27 Phillips Petroleum Co Ammonium nitrate analysis and control
JP2001074927A (ja) * 1999-09-07 2001-03-23 Fuji Xerox Co Ltd 着色膜の形成方法、駆動素子及び液晶表示装置
JP4448644B2 (ja) * 2002-05-09 2010-04-14 シャープ株式会社 半導体装置の製造方法
US20080035489A1 (en) * 2006-06-05 2008-02-14 Rohm And Haas Electronic Materials Llc Plating process
CN201450015U (zh) * 2009-07-08 2010-05-05 中电电气（南京）光伏有限公司 一种改善晶体硅太阳能电池片光致衰减特性的装置
DE102009059300B4 (de) * 2009-12-23 2019-11-28 Solarworld Industries Gmbh Photovoltaikzellen-Transport- und -Regenerationsbehälter

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01100975A (ja) * 1987-10-14 1989-04-19 Sanyo Electric Co Ltd 光起電力装置
JPH02168616A (ja) * 1988-09-30 1990-06-28 Kanegafuchi Chem Ind Co Ltd 薄膜非晶質半導体装置
JPH06204524A (ja) * 1992-12-28 1994-07-22 Canon Inc 太陽電池の損壊箇所の修復方法及びその太陽電池
JP2001189484A (ja) * 1999-10-19 2001-07-10 Hikari Kobayashi シリコン光電変換素子，その製造方法及びその処理方法
JP2002289886A (ja) * 2001-03-27 2002-10-04 Hikari Kobayashi 半導体膜の処理方法，光起電力素子の製造方法及び光起電力素子
US20100243036A1 (en) * 2006-03-21 2010-09-30 Universitat Konstanz Method for Fabricating a Photovolataic Element with Stabilised Efficiency

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Publication number Publication date
CN104737306B (zh) 2017-07-11
CN104737306A (zh) 2015-06-24
US20150236190A1 (en) 2015-08-20
EP2896075A1 (fr) 2015-07-22
WO2014041260A1 (fr) 2014-03-20
FR2995727A1 (fr) 2014-03-21
FR2995727B1 (fr) 2014-10-24
EP2896075B1 (fr) 2016-06-01
US9520528B2 (en) 2016-12-13

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