JP2015515612A - キャリア基板および強誘電体層からなるセンサ装置、ならびにそのセンサ装置の製造方法および使用 - Google Patents
キャリア基板および強誘電体層からなるセンサ装置、ならびにそのセンサ装置の製造方法および使用 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/12—Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0076—Transmitting or indicating the displacement of flexible diaphragms using photoelectric means
- G01L9/0077—Transmitting or indicating the displacement of flexible diaphragms using photoelectric means for measuring reflected light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/08—Investigating strength properties of solid materials by application of mechanical stress by applying steady tensile or compressive forces
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
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Abstract
Description
きわめて高感度の曲げセンサおよび伸びセンサとして、曲げないしは伸びの絶対値を測定するため、ならびに曲げないしは伸びを簡便な電子的読出しにおいて方向依存性および局所性に測定するため。使用範囲は、圧力測定、気体または液体の正圧管理または(貫)流量測定;位置決定およびポジショナ、タッチスクリーンにおいて、アナログ式測定変換(Messumformung)(例えば、ゴーレイセルでの温度測定)において、ならびに、例えば、エアバッグからインテリジェントスイッチに至るまでの安全システムを作動させる際のスイッチとして。
a)膜の、圧力(D>0)に面する側にある強誘電体層。代わりに、膜が省略され、強誘電体層が膜として形成されていてもよい。
b)膜の、圧力(D>0)に面する側の下側にある強誘電体層。代わりに、膜が省略され、強誘電体層が膜として形成されていてもよい。
c)両面が強誘電体センサ層で被覆された膜が両面で光学式に読み出される。代わりに、膜が省略され、強誘電体層が膜として形成されていてもよい。
a)強誘電体層のみを備える電極対27ならびに強誘電体層および膜を備える電極対28を装備した、膜の、圧力(D>0)に面する側にある強誘電体層。
b)強誘電体層のみを備える電極対27ならびに強誘電体層および膜を備える電極対28を装備した、膜の、圧力(D>0)に面する側の下側にある強誘電体層。
c)強誘電体層のみを備える、二対の電極対27a、27bを利用して、一方の電極対が上層で測定し、第二の電極対が下層で測定する、両面が強誘電体センサ層で被覆された膜の両面式読出し。
a)標準的な実施形態における平面平行プレート配置。
b)より小さい測定面上でより高い解像度を達成する平面交差指状構造。
c)横断面図で示される異なる測定配置は、可能な平面電極対位置を示す。
それ自身は膜上に取り付けられた強誘電体層の上にある平面電極対が、膜の下方での強誘電体層の平面伸長/圧縮を測定する。
Claims (10)
- キャリア基板、ならびにそのキャリア基板上に配置された強誘電体層を備え、強誘電体層の誘電率を読み出すための手段を有するセンサ装置であって、強誘電体層が結晶としてキャリア基板上に配置されていることを特徴とするセンサ装置。
- 可撓性のキャリア基板を特徴とする、請求項1に記載のセンサ装置。
- キャリア基板材料としてのシリコンもしくはAl2O3、またはポリイミドもしくは金属を特徴とする、請求項1または2に記載のセンサ装置。
- CaTiO3、SrTiO3、KTaO3、BaTiO3、Pb5GeO11、Eu2(MoO4)3、PbTa2O6、KNbO3、SrTeO3、PbTiO3、SrBi2Ta2O9、LiTaO3、LiNbO3またはこれら材料の組み合わせからの強誘電体材料を特徴とする、請求項3に記載のセンサ装置。
- 室温よりも低い転移温度を有する材料からの強誘電体層がキャリア基板上に配置されており、そのため、圧力が、強誘電体層の結晶格子に引張応力を生じることを特徴とする、請求項1〜4のいずれか一つに記載のセンサ装置。
- 室温よりも高い転移温度を有する強誘電体材料がキャリア基板上に配置されており、そのため、圧力が、結晶格子に圧縮応力を生じることを特徴とする、請求項1〜5のいずれか一つに記載のセンサ装置。
- 室温よりも高い転移温度を有する強誘電体材料がキャリア基板の片側に、および室温よりも低い転移温度を有する強誘電体材料がキャリア基板の反対側に配置されていることを特徴とする、請求項1〜6のいずれか一つに記載のセンサ装置。
- 物理蒸着、化学蒸着、化学溶液析出、または電気泳動析出によって、強誘電体材料を結晶としてキャリア基板上に配置することを特徴とする、請求項1〜7のいずれか一つに記載のセンサ装置を製造する方法。
- センサ装置に対して垂直に加えられる機械的力が、可逆的に、強誘電体層における分極性の変化を生じ、この力が減衰した後、強誘電体層の分極性が再び初期状態に移行する、圧力センサまたは曲げセンサとしての、請求項1〜8のいずれか一つに記載のセンサ装置の使用。
- 強誘電体層の転移温度における圧力の測定を特徴とする、請求項9に記載の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012005262.6 | 2012-03-15 | ||
DE102012005262.6A DE102012005262B4 (de) | 2012-03-15 | 2012-03-15 | Sensoranordnung aus Trägersubstrat und ferroelektrischer Schicht |
PCT/DE2013/000134 WO2013135226A1 (de) | 2012-03-15 | 2013-03-09 | Sensoranordnung aus trägersubstrat und ferroelektrischer schicht sowie verfahren zur herstellung und verwendung der sensoranordnung |
Publications (2)
Publication Number | Publication Date |
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JP2015515612A true JP2015515612A (ja) | 2015-05-28 |
JP6154832B2 JP6154832B2 (ja) | 2017-06-28 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014561284A Expired - Fee Related JP6154832B2 (ja) | 2012-03-15 | 2013-03-09 | キャリア基板および強誘電体層からなるセンサ装置、ならびにそのセンサ装置の製造方法および使用 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9515157B2 (ja) |
EP (1) | EP2826069B1 (ja) |
JP (1) | JP6154832B2 (ja) |
CN (1) | CN104321874B (ja) |
DE (1) | DE102012005262B4 (ja) |
WO (1) | WO2013135226A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210086398A (ko) | 2019-12-31 | 2021-07-08 | 한국과학기술원 | 압전 물질을 이용한 고민감도 압력 센서 및 이를 이용한 스마트 디바이스 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US10067007B2 (en) | 2015-09-02 | 2018-09-04 | Oculus Vr, Llc | Resistive-capacitive deformation sensor |
JP6872374B2 (ja) * | 2017-01-24 | 2021-05-19 | 住友金属鉱山株式会社 | 圧電性ウェハの表裏判定装置及び面取り装置 |
IL256108B (en) * | 2017-12-04 | 2021-02-28 | Elbit Systems Ltd | A system and method for identifying the state of use and originality of a product |
US10962497B2 (en) | 2017-12-19 | 2021-03-30 | International Business Machines Corporation | Sensors based on negative capacitance field effect transistors |
CN108469315B (zh) * | 2018-03-29 | 2020-06-19 | 湘潭大学 | 一种基于铁电畴壁氧空位电子气导电性的压力传感器单元 |
US20210013005A1 (en) * | 2019-07-09 | 2021-01-14 | Tokyo Electron Limited | Process control enabled vdc sensor for plasma process |
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JP2005347364A (ja) * | 2004-06-01 | 2005-12-15 | National Institute Of Advanced Industrial & Technology | 伸縮可能な圧電素子 |
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2012
- 2012-03-15 DE DE102012005262.6A patent/DE102012005262B4/de not_active Withdrawn - After Issue
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2013
- 2013-03-09 CN CN201380014440.6A patent/CN104321874B/zh not_active Expired - Fee Related
- 2013-03-09 WO PCT/DE2013/000134 patent/WO2013135226A1/de active Application Filing
- 2013-03-09 US US14/384,304 patent/US9515157B2/en not_active Expired - Fee Related
- 2013-03-09 EP EP13716183.2A patent/EP2826069B1/de not_active Not-in-force
- 2013-03-09 JP JP2014561284A patent/JP6154832B2/ja not_active Expired - Fee Related
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JP2001083176A (ja) * | 1999-09-14 | 2001-03-30 | Tokin Corp | 加速度センサ |
JP4394212B2 (ja) * | 1999-09-14 | 2010-01-06 | Necトーキン株式会社 | 加速度センサ |
JP2005347364A (ja) * | 2004-06-01 | 2005-12-15 | National Institute Of Advanced Industrial & Technology | 伸縮可能な圧電素子 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20210086398A (ko) | 2019-12-31 | 2021-07-08 | 한국과학기술원 | 압전 물질을 이용한 고민감도 압력 센서 및 이를 이용한 스마트 디바이스 |
KR102322132B1 (ko) * | 2019-12-31 | 2021-11-05 | 한국과학기술원 | 압전 물질을 이용한 고민감도 압력 센서 및 이를 이용한 스마트 디바이스 |
Also Published As
Publication number | Publication date |
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EP2826069B1 (de) | 2016-02-17 |
WO2013135226A1 (de) | 2013-09-19 |
JP6154832B2 (ja) | 2017-06-28 |
EP2826069A1 (de) | 2015-01-21 |
DE102012005262A1 (de) | 2013-09-19 |
DE102012005262B4 (de) | 2014-11-06 |
CN104321874B (zh) | 2017-10-27 |
US20150068316A1 (en) | 2015-03-12 |
US9515157B2 (en) | 2016-12-06 |
CN104321874A (zh) | 2015-01-28 |
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