WO2015051729A1 - 电容式mems压力传感器 - Google Patents

电容式mems压力传感器 Download PDF

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Publication number
WO2015051729A1
WO2015051729A1 PCT/CN2014/087935 CN2014087935W WO2015051729A1 WO 2015051729 A1 WO2015051729 A1 WO 2015051729A1 CN 2014087935 W CN2014087935 W CN 2014087935W WO 2015051729 A1 WO2015051729 A1 WO 2015051729A1
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Prior art keywords
electrode plate
film
lower electrode
pressure sensor
upper electrode
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PCT/CN2014/087935
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English (en)
French (fr)
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夏长奉
周国平
钱栋彪
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无锡华润上华半导体有限公司
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Publication of WO2015051729A1 publication Critical patent/WO2015051729A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0075—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a ceramic diaphragm, e.g. alumina, fused quartz, glass

Definitions

  • the invention relates to a pressure sensor, in particular to a capacitive MEMS pressure sensor.
  • Capacitive pressure sensors are widely used because of their remarkable advantages such as low temperature drift, high sensitivity, low noise, and large dynamic range.
  • the contact capacitive pressure sensor is composed of a silicon diaphragm, a substrate, a substrate electrode, and an insulating layer.
  • a capacitor structure is formed between the silicon diaphragm and the substrate electrode; after the pressure, the silicon diaphragm is deformed, and the electrode spacing d changes accordingly.
  • the MEMS capacitive pressure sensor consists of two capacitors: one is the measuring capacitance C x for measurement and the other is the reference capacitor C o for temperature compensation, which deforms when the diaphragm (upper electrode) is subjected to the pressure p.
  • ⁇ , A, and d are the dielectric constant, effective area, and plate spacing between the electrodes, respectively.
  • the change in the plate spacing d caused by the pressure load will inevitably cause a corresponding change in the capacitance C.
  • ⁇ 0 is the vacuum dielectric constant
  • ⁇ a is the relative dielectric constant of air
  • ⁇ i is the relative dielectric constant of the insulating layer material
  • t is the thickness of the insulating layer
  • g is the initial gap
  • w(r) is the radius The deformation on the circle of r.
  • the center of the circular diaphragm is used as the coordinate origin.
  • the contact area linearly increases with pressure, thereby causing a linear change in the capacitance value.
  • the sensitivity and linear range of the sensor can be improved by selecting device parameters such as the size, thickness, and pitch of the appropriate diaphragm.
  • the conventional capacitive MEMS pressure sensor is improved in sensitivity by increasing the size of the detection film, reducing the thickness of the detection film, and reducing the spacing between the electrode plates, but introducing nonlinearity and dynamic response of the device. Deterioration of the range and the like; the size of the device is further increased and the cost is increased due to an increase in the film size.
  • a capacitive MEMS pressure sensor comprising:
  • the substrate is provided with a through hole or a groove for contacting the detecting film with the external working medium and withstanding the pressure of the external working medium;
  • An upper electrode plate having a lead fixedly attached to an upper surface of the substrate or the detecting film, the upper electrode plate being located above the detecting film and formed between the detecting film gap;
  • a lower electrode plate having a lead fixedly disposed on the detecting film, the lower electrode plate being located in a gap between the detecting film and the upper electrode plate, the lower electrode plate and the bottom plate
  • the upper electrode plate constitutes a capacitor.
  • the middle portion of the lower electrode plate is connected to the detection film or connected by a protrusion or a cylinder.
  • the detecting film is a conductor and is provided with a lead, and a cavity is formed between the upper electrode plate and the detecting film, and the upper electrode plate is provided with at least one through hole.
  • the lower electrode plate is located in the chamber and is connected to the detecting film by an insulating material, and the upper electrode plate is fixedly connected to an upper surface of the substrate or connected to the detecting film by an insulating material.
  • the geometric center of the lower surface of the lower electrode plate extends downward to form a lower electrode plate connecting portion, and the lower electrode plate connecting portion is insulated from the geometric center of the upper surface of the working portion of the detecting film.
  • the layer is fixedly connected.
  • the substrate is a silicon nitride layer, a silicon dioxide layer, and a silicon substrate from top to bottom, and the detection film is disposed on the silicon nitride layer.
  • the detection film is a polysilicon film.
  • the upper electrode plate and the lower electrode plate are both made of polysilicon.
  • the insulating layer is made of silicon nitride.
  • the longitudinal axis of the upper electrode plate has an n-shaped cross section, and the lower electrode plate is covered in the inner cavity thereof, and the inner upper bottom surface is a flat surface, and is formed with the lower electrode plate. capacitance.
  • the detection film and the upper and lower electrodes of the capacitor are separated, instead of being one of them, when the device is in operation, the external working medium is in contact with the detection film, and the detection film is pressed to drive the lower electrode of the detection electrode to change the spacing between the upper and lower electrode plates.
  • the capacitance change is generated, and then the lead is led out to the external capacitance detecting circuit, and the change of the detecting capacitance is used to obtain the change of the spacing between the upper and lower electrode plates, and then converted into the working medium pressure value.
  • the effective area is basically constant, the capacitance value is determined by the pitch, and the area of the detecting film and the detecting capacitor can be separately adjusted, and the device size can be more flexibly adjusted under the specified device parameters when designing the device. To reduce costs.
  • the present invention also avoids the problem of nonlinearity and dynamic response range change introduced in the conventional pressure sensor for adjusting the film size for improving sensitivity from the device structure.
  • FIG. 1 is a schematic cross-sectional view showing a capacitive MEMS pressure sensor according to a first embodiment of the present invention
  • FIG. 2 is a schematic view showing a first layer structure of a capacitive MEMS pressure sensor according to a second embodiment of the present invention
  • FIG. 3 is a schematic view showing a second layer structure of a capacitive MEMS pressure sensor according to a second embodiment of the present invention
  • FIG. 4 is a schematic view showing a third layer structure of a capacitive MEMS pressure sensor according to a second embodiment of the present invention.
  • Figure 5 is a plan view of the first to third layer structures shown in Figures 2 to 4 superimposed;
  • Figure 6 is a cross-sectional view taken along line A-A' of Figure 5;
  • Figure 7 is a cross-sectional view taken along line B-B' in Figure 5;
  • Figure 8 is a cross-sectional view taken along line C-C' of Figure 5.
  • Figure 1 shows a first embodiment of the invention.
  • a capacitive MEMS pressure sensor is provided in order from bottom to top:
  • the substrate 1, the detecting film 2, and the lower electrode plate 3 and the upper electrode plate 4 having leads.
  • the detecting film 2 is fixedly laid on the upper surface of the substrate 1; the substrate 1 is provided with a through hole 14 for contacting the detecting film 2 with the external working medium and subjecting the detecting film 2 to the pressure of the external working medium (may also be of any shape or Groove)
  • the upper electrode plate 4 having the lead wire is fixedly connected to the detecting film 2 (may also be fixed on the upper surface of the substrate 1 and determined according to the size of the detecting film 2 or the design and production process), and is located above the detecting film 2 and A gap 8 is formed between the detecting films 2.
  • the working portion of the upper electrode plate 4 is a flat plate, and may have any shape such as a rectangle, a polygon, or a circle.
  • the edge extends downward to form an upper electrode plate connecting portion, and the upper electrode plate connecting portion is fixedly connected to the detecting film 2 (may also Fixed on the upper surface of the substrate 1 while supporting the working portion of the upper electrode plate 4, in order to release the air compressed by the upper electrode plate 4 in the gap between the detecting films 2 when the detecting film 2 is under pressure, At least one release hole 41 or other shaped through hole and opening are provided on the upper electrode plate connecting portion or on the upper electrode plate working portion. In this embodiment, seven square release holes are uniformly disposed on the upper electrode plate working portion. As shown in Figure 5.
  • the lower electrode plate 3 having the lead wire is fixedly disposed on the detecting film 2 and located in the gap 8 between the detecting film 2 and the upper electrode plate 4, and the lower electrode plate 3 and the upper electrode plate 4 constitute a capacitance.
  • the lower electrode plate 3 can be moved upward in a horizontal state to increase the linear range in which the capacitance varies with the pitch between the upper and lower electrode plates, and the middle portion of the lower electrode plate 3 and the detecting film 2 pass.
  • a cylinder connection also can be a point connection or other shape of the bump to connect
  • the pillar is disposed as a lower electrode plate connecting portion 31 formed by extending downward in the middle of the lower surface of the lower electrode plate 3.
  • the working principle of the capacitive MEMS pressure sensor of the present embodiment is that the external working medium applies pressure to the lower surface of the detecting film 2 through the through hole 14, causing the upward deformation of the film 2, and pushing the lower electrode plate 3 upward, so that the upper and lower electrode plates are moved between The gap becomes smaller, so that the capacitance value between the two changes.
  • the present invention separates the detecting film 2 from the electrode plate. First, the electrode plate is no longer deformed by force. The linear range of the detection is greatly improved.
  • the size of the detection film 2 and the upper and lower electrode plates can be separately adjusted as needed, which brings more degrees of freedom to the design of the pressure sensor, and facilitates the balance between technical indicators and costs.
  • the detecting film 2 is a conductor (the polysilicon is selected in the embodiment), and a lead is provided, and a chamber is formed between the upper electrode plate 4 and the detecting film 2 (ie, the first embodiment)
  • the upper electrode plate 4 is provided with at least one through-hole release hole 41 (evenly arranged in this embodiment)
  • the lower electrode plate 3 is located in the chamber and passes through the insulating layer 6 with the detecting film 2 (this The embodiment is a silicon nitride layer) connection.
  • the lower electrode geometrical center of the lower electrode plate 3 extends downward to form a lower electrode plate connecting portion 31 (in the same form as the first embodiment), and the lower electrode plate is connected.
  • the portion 31 is fixedly connected to the geometric center of the upper surface of the working portion of the detecting film 2 through the insulating layer 6, so that the lower electrode plate 3 and the detecting film 2 are insulated from each other.
  • the upper electrode plate 4 is fixedly connected to the detecting film 2 by an insulating material (the silicon dioxide layer 5 in this embodiment) (it may also be fixedly attached to the upper surface of the substrate 1 as needed), so that the upper electrode plate 4 and The insulation between the films 2 is detected.
  • an insulating material the silicon dioxide layer 5 in this embodiment
  • a Faraday electromagnetic cage can be constructed, which effectively isolates the influence of the external electromagnetic field on the lower electrode and realizes EMI protection.
  • the substrate 1 is, in order from top to bottom, a silicon nitride layer 13, a silicon dioxide layer 12, and a silicon substrate 11, and the detecting film 2 is disposed on the silicon nitride layer 13.
  • the detection film is a polysilicon film.
  • the upper electrode plate 4 and the lower electrode plate 3 are made of polysilicon.
  • the insulating layer 6 is made of silicon nitride.
  • the longitudinal central axis of the upper electrode plate 4 has an n-shaped cross section, and the lower electrode plate 3 is covered in the inner cavity thereof.
  • the inner bottom surface of the inner surface of the upper electrode plate 4 is a flat surface, and forms a capacitance with the lower electrode 3 plate.
  • the invention has the beneficial effects that since the detecting film 2 and the upper and lower electrode plates of the capacitor are separated, instead of being one of them, when the device is in operation, the external working medium contacts the detecting film 2, and the detecting film 2 is pressed to drive the lower electrode.
  • the action of the board 3 changes the spacing between the upper and lower electrode plates, and the capacitance change occurs, and then the lead wire is led out to the external capacitance detecting circuit, and the change of the detecting capacitance is used to obtain the change of the spacing between the upper and lower electrode plates, and then the conversion is performed.
  • the pressure value of the working medium since the detecting film 2 and the upper and lower electrode plates of the capacitor are separated, instead of being one of them, when the device is in operation, the external working medium contacts the detecting film 2, and the detecting film 2 is pressed to drive the lower electrode.
  • the action of the board 3 changes the spacing between the upper and lower electrode plates, and the capacitance change occurs, and then the lead wire is led out to the external capacitance detecting
  • the effective area is basically constant, the capacitance value is determined by the pitch, and the area of the detecting film 2 and the detecting capacitor can be separately adjusted, and the device can be more flexible under the specified device parameters when designing the device. Adjust the device size to reduce costs.
  • the present invention also avoids the problem of nonlinearity and dynamic response range change introduced in the conventional pressure sensor for adjusting the film size for improving sensitivity from the device structure.
  • a Faraday electromagnetic cage can be constructed, which effectively isolates the influence of the external electromagnetic field on the lower electrode plate 3 and realizes EMI protection.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

一种电容式MEMS压力传感器，包括衬底（1）、检测薄膜（2）、具有引线的上电极板（4）以及具有引线的下电极板（3）。检测薄膜（2）固定铺设于衬底（1）的上表面上。上电极板（4）固定连接于衬底（1）的上表面上或检测薄膜（2）上。上电极板（4）位于检测薄膜（2）上方且与检测薄膜（2）之间形成间隙（8）。下电极板（3）固定设置于检测薄膜（2）上。下电极板（3）位于检测薄膜（2）与上电极板（4）之间的间隙（8）中。下电极板（3）和上电极板（4）构成电容。在设计器件时在规定的器件参数下可以更加灵活地调整器件尺寸，以降低成本。并且，从器件结构上回避了传统压力传感器中的非线性以及动态响应范围改变的问题。

Description

电容式MEMS压力传感器 技术领域
本发明涉及一种压力传感器，特别涉及一种电容式MEMS压力传感器。
背景技术
电容式压力传感器具有低温漂、高灵敏度、低噪声和较大的动态范围等显著的优点而被广泛应用。接触式电容压力传感器由硅膜片、衬底、衬底电极和绝缘层构成。硅膜片和衬底电极间构成一个电容结构；受压力作用后硅膜片变形，此时电极间距d发生了相应的变化。MEMS电容式压力传感器包括了两个电容：一个是用于测量的测量电容Cx，另一个是用于温度补偿的参考电容Co，当膜片(上电极)受到压力p作用时发生变形，随着压力的增大膜片与衬底的距离逐渐缩小，在压力达到接触点压力(即膜片中心接触到绝缘层时的压力)之前，测量电容器的电容值由C＝εA/d决定，式中，ε、A、d分别是电极间的介电常数、有效面积和极板间距。压力载荷引起的极板间距d的变化必然会使电容C发生相应的变化。当压力p继续增加时，达到接触点之后，测量电容值则由非接触电容和接触电容决定。在极坐标系下的非接触电容量的积分表达式为
Figure PCTCN2014087935-appb-000001
式中ε0为真空介电常数；εa为空气的相对介电常数；εi为绝缘层材料的相对介电常数；t为绝缘层的厚度；g为初始间隙；w(r)为半径为r的圆上的变形。计算时以圆形膜片的中心作为坐标原点。在一定的范围内接触区域随着压力线性地增大，从而使电容值产生线性的变化。通过选择适当膜片的尺寸、厚度和电极的间距等的器件参数，可以提高传感器的灵敏度和线性范围。由此可见，传统的电容式MEMS压力传感器为提高灵敏度，是通过增大检测薄膜的尺寸、减小检测薄膜的厚度以及缩小电极极板间间距来实现，但是由此引入非线性以及器件动态响应范围等指标的劣化；由于增大了薄膜尺寸，使得器件的尺寸进一步增大，以及成 本增加。
发明内容
有鉴于此，有必要提供一种从器件结构上规避传统压力传感器上述问题的电容式MEMS压力传感器。
一种电容式MEMS压力传感器，包括：
衬底；
检测薄膜，固定铺设于所述衬底的上表面上；所述衬底上设有使检测薄膜与外界工作介质接触并承受外界工作介质压力的通孔或沟槽；
具有引线的上电极板，所述上电极板固定连接于所述衬底的上表面上或所述检测薄膜上，所述上电极板位于所述检测薄膜上方且与所述检测薄膜之间形成间隙；
具有引线的下电极板，所述下电极板固定设置于所述检测薄膜上，所述下电极板位于所述检测薄膜与所述上电极板之间的间隙中，所述下电极板与所述上电极板构成电容。
在其中一个实施例中，所述下电极板的中部与所述检测薄膜点连接或通过一凸起或柱体连接。
在其中一个实施例中，所述检测薄膜为导体，并设有引线，所述上电极板与所述检测薄膜之间形成腔室，所述上电极板上设置有至少一个贯穿的释放孔，所述下电极板位于所述腔室中并与所述检测薄膜通过绝缘材料连接，所述上电极板固定连接于所述衬底的上表面上或通过绝缘材料连接于所述检测薄膜上。
在其中一个实施例中，所述下电极板下表面几何中心处向下延伸形成一下电极板连接部，所述下电极板连接部与所述检测薄膜的工作部上表面的几何中心处通过绝缘层固定连接。
在其中一个实施例中，所述衬底从上到下依次为氮化硅层、二氧化硅层和硅衬底，所述检测薄膜设置于所述氮化硅层上。
在其中一个实施例中，所述检测薄膜为多晶硅薄膜。
在其中一个实施例中，所述上电极板和下电极板均为多晶硅制成。
在其中一个实施例中，所述绝缘层为氮化硅制成。
在其中一个实施例中，所述上电极板的纵向中轴剖面为n形，将所述下电极板罩设于其内腔中，其内部上底面为平面，并与所述下电极板构成电容。
由于将检测薄膜和电容上下电极分开，而不是作为其中之一，器件工作时，外界工作介质与检测薄膜接触，压迫检测薄膜，带动检测电极下极板动作，改变了上下电极极板间间距，产生电容变化，进而由引线引出至外接电容检测电路，由侦测电容的改变量得出上下电极极板间间距的变化，进而换算成工作介质的压力数值。由于上下电极不再受力变形，其有效面积基本恒定，电容值由间距决定，同时检测薄膜和检测电容的面积可分开调节，在设计器件时在规定的器件参数下可以更加灵活的调整器件尺寸，以降低成本。本发明也从器件结构上回避了传统压力传感器中为提高灵敏度而调整薄膜尺寸所引入的非线性以及动态响应范围改变的问题。
附图说明
图1是本发明第一实施例的电容式MEMS压力传感器的剖面示意图；
图2是本发明第二实施例的电容式MEMS压力传感器的第一层结构的示意图；
图3是本发明第二实施例的电容式MEMS压力传感器的第二层结构的示意图；
图4是本发明第二实施例的电容式MEMS压力传感器的第三层结构的示意图；
图5是图2至图4所示的第一至第三层结构叠加后的俯视图；
图6是图5中沿A-A’的剖视图；
图7是图5中沿B-B’的剖视图；
图8是图5中沿C-C’的剖视图。
具体实施方式
为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。 附图中给出了本发明的较佳实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。
下面结合附图和实施例对本发明作进一步的详细说明。图1所示为本发明的第一实施例。
一种电容式MEMS压力传感器，从下到上依次设有：
衬底1、检测薄膜2、和具有引线的下电极板3和上电极板4。
检测薄膜2固定铺设于衬底1的上表面上；衬底1上设有使检测薄膜2与外界工作介质接触并使检测薄膜2承受外界工作介质压力的通孔14(也可以是任意形状或沟槽)；
具有引线的上电极板4固定连接于检测薄膜2上(也可以固定于衬底1的上表面上，根据检测薄膜2的大小或者设计生产工艺需要来确定)，并位于检测薄膜2上方且与检测薄膜2之间形成间隙8。上电极板4的工作部为一平板，可以是矩形、多边形、圆形等任意形状，其边缘向下延伸形成上电极板连接部，上电极板连接部固定连接于检测薄膜2上(也可以固定于衬底1的上表面上)，同时起到支撑上电极板4工作部的作用，为释放在检测薄膜2承受压力时上电极板4于检测薄膜2之间间隙内被压缩的空气，在上电极板连接部上或者在上电极板工作部上设置至少一个释放孔41或其它形状的通孔和开口，本实施例中，采用在上电极板工作部上均匀设置7个方形释放孔，如图5所示。
具有引线的下电极板3固定设置于检测薄膜2上，并位于检测薄膜2与上电极板4之间的间隙8中，下电极板3与上电极板4构成电容。
为了在检测薄膜2受压变形时，下电极板3能保持水平状态向上移动，以提高电容量随上下电极板极间间距变化而变化的线性范围，下电极板3的中部与检测薄膜2通过一柱体连接(也可以是点连接或其它形状的凸起来连 接)，本实施例中柱体设置为下电极板3下表面中部向下延伸形成的下电极板连接部31。
本实施例的电容式MEMS压力传感器的工作原理是，外部工作介质通过通孔14对检测薄膜2下表面施加压力，导致其向上凹陷变形，推动下电极板3向上移动，使得上下电极板之间的间隙变小，从而使二者之间的电容值发生变化，通过检测该电容变化量，换算出压力值，本发明将检测薄膜2和电极板分离，第一，电极板不再受力变形，检测的线性范围大大提高；第二，可以根据需要分别调整检测薄膜2和上下电极板的大小，为压力传感器的设计带来更多的自由度，便于实现技术指标和成本之间的平衡。
图2-图8所示本发明第二实施例的电容式MEMS压力传感器。
在第一实施例的基础上，所述检测薄膜2为导体(本实施例选择多晶硅)，并设有引线，上电极板4与所述检测薄膜2之间形成腔室(即第一实施例中所述的间隙)，上电极板4上设置有至少一个贯穿的释放孔41(本实施例均匀设置7个)，下电极板3位于腔室中并与检测薄膜2通过绝缘层6(本实施例为氮化硅层)连接，为了优化技术指标，下电极板3下表面几何中心处向下延伸形成一下电极板连接部31(和第一实施例采取相同的形式)，下电极板连接部31与检测薄膜2的工作部上表面的几何中心处通过绝缘层6固定连接，使得下电极板3和检测薄膜2绝缘隔离。
上电极板4通过绝缘材料(本实施例为二氧化硅层5)固定连接于检测薄膜2上(也可以根据需要固定连接于所述衬底1的上表面上)，使得上电极板4和检测薄膜2之间绝缘隔离。
在实际应用中，通过在上电极板4和检测薄膜2之间施加恒定的偏压，可以构成一法拉第电磁笼，有效地隔绝了外界电磁场对下电极的影响，实现EMI保护。
上述实施例中，通过进一步优化结构，衬底1从上到下依次为氮化硅层13、二氧化硅层12和硅衬底11，检测薄膜2设置于所述氮化硅层13上。检测薄膜为多晶硅薄膜。上电极板4和下电极板3均为多晶硅制成。绝缘层6为氮化硅制成。上电极板4的纵向中轴剖面为n形，将下电极板3罩设于其内腔中，上电极板4的内腔内部上底面为平面，并与下电极3板构成电容。
本发明的有益效果是，由于将检测薄膜2和电容上、下电极板分开，而不是作为其中之一，器件工作时，外界工作介质与检测薄膜2接触，压迫检测薄膜2，带动下电极极板3动作，改变了上、下电极板之间的间距，产生电容变化，进而由引线引出至外接电容检测电路，由侦测电容的改变量得出上下电极板之间间距的变化，进而换算成工作介质的压力数值。由于上、下电极板不再受力变形，其有效面积基本恒定，电容值由间距决定，同时检测薄膜2和检测电容的面积可分开调节，在设计器件时在规定的器件参数下可以更加灵活的调整器件尺寸，以降低成本。
本发明也从器件结构上回避了传统压力传感器中为提高灵敏度而调整薄膜尺寸所引入的非线性以及动态响应范围改变的问题。同时通过在上电极板4和检测薄膜2之间施加恒定的偏压，可以构成一法拉第电磁笼，有效的隔绝了外界电磁场对下电极板3的影响，实现EMI保护。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (9)

  1. 一种电容式MEMS压力传感器，其特征在于，包括：
    衬底；
    检测薄膜，固定铺设于所述衬底的上表面上；所述衬底上设有使检测薄膜与外界工作介质接触并承受外界工作介质压力的通孔或沟槽；
    具有引线的上电极板，所述上电极板固定连接于所述衬底的上表面上或所述检测薄膜上，所述上电极板位于所述检测薄膜上方且与所述检测薄膜之间形成间隙；
    具有引线的下电极板，所述下电极板固定设置于所述检测薄膜上，所述下电极板位于所述检测薄膜与所述上电极板之间的间隙中，所述下电极板与所述上电极板构成电容。
  2. 根据权利要求1所述的电容式MEMS压力传感器，其特征在于，所述下电极板的中部与所述检测薄膜点连接或通过一凸起或柱体连接。
  3. 根据权利要求1或2所述的电容式MEMS压力传感器，其特征在于，所述检测薄膜为导体，并设有引线，所述上电极板与所述检测薄膜之间形成腔室，所述上电极板上设置有至少一个贯穿的释放孔，所述下电极板位于所述腔室中并与所述检测薄膜通过绝缘材料连接，所述上电极板固定连接于所述衬底的上表面或通过绝缘材料连接于所述检测薄膜上。
  4. 根据权利要求3所述的电容式MEMS压力传感器，其特征在于，所述下电极板下表面几何中心处向下延伸形成一连接部，所述连接部与所述检测薄膜的工作部上表面的几何中心处通过绝缘层固定连接。
  5. 根据权利要求3所述的电容式MEMS压力传感器，其特征在于，所述衬底从上到下依次为氮化硅层、二氧化硅层和硅，所述检测薄膜设置于所述氮化硅层上。
  6. 根据权利要求3所述的电容式MEMS压力传感器，其特征在于，所述检测薄膜为多晶硅薄膜。
  7. 根据权利要求3所述的电容式MEMS压力传感器，其特征在于，所述上电极板和下电极板均为多晶硅制成。
  8. 根据权利要求4所述的电容式MEMS压力传感器，其特征在于，所 述绝缘层为氮化硅制成。
  9. 根据权利要求8所述的电容式MEMS压力传感器，其特征在于，所述上电极板的纵向中轴剖面为n形，将所述下电极板罩设于其内腔中，所述上电极板的内部上底面为平面，所述上底面与所述下电极板构成电容。
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