JP2015220369A5 - - Google Patents

Description

As can be understood from the following description, during paddle processing, it is required to adjust the gap G (see FIG. 3) between the lower surface of the wafer W and the paddle ring 60 relatively accurately over the entire circumference of the wafer W. For this reason, it is also preferable to provide a plurality of lifting mechanisms 63 in the circumferential direction.

A ring-shaped shielding wall 52 extends upward from the bottom wall of the recovery cup 50 at a radial position between the substrate holding portion 31 and the paddle ring 60. The front end (upper end) of the shielding wall 52 is close to the lower surface of the wafer W held by the substrate holding unit 31 with a narrow gap (for example, about 1 mm). Even if an attempt is made to enter the upper surface (adsorption surface) of 31, it is blocked. The shielding wall 52 also has a role of protecting the substrate elevating mechanism 70 and the column portion 32 and the rotation driving unit 33 of the substrate holding mechanism 30 from the processing liquid.

Said 2nd method can be applied also to a chemical | medical solution process. That is, first, chemical processing is performed in the same procedure as the above-described chemical processing, and the gap G is slightly widened in the middle, and a part of the chemical stored on the upper surface of the wafer W is discharged from the gap G (FIG. 4). After that, the size of the gap G is restored (the state shown in FIG. 3A). The chemical solution discharged from the gap G is replenished onto the wafer W from the chemical solution nozzle 41 . By doing in this way, it can process with a chemical | medical solution with little deterioration degree.

The size of the gap G is always kept large during the chemical processing, and the chemical processing can be performed while continuously discharging the chemical from the gap G as shown in FIG. Also in this case, the chemical solution discharged from the gap G is replenished onto the wafer W from the chemical solution nozzle 41 . However, in this case, if the discharge flow rate of the chemical liquid from the gap G is increased too much, the chemical-saving liquid effect is impaired, so that the increase in the size of the gap G is only slightly larger than the state shown in FIG. It is preferable.

Further, as shown in FIG. 4B, a part of the chemical stored in the storage tank formed by the paddle ring 60 and the wafer W is also obtained by overflowing the chemical from the upper end of the side wall 62 of the paddle ring 60. Can be discharged. 4C, a liquid drain hole 62c is provided in the side wall 62 of the paddle ring 60, and the chemical liquid is discharged from the liquid drain hole 62c, so that the paddle ring 60 and the wafer W are formed. A part of the chemical stored in the storage tank can be discharged. When the methods shown in FIGS. 4B and 4C are employed, it is not necessary to change the gap G in order to control the discharge amount of the chemical liquid, and the chemical liquid is temporarily supplied from the chemical nozzle 41 to the wafer W. To supply. In this case, an amount of chemical liquid corresponding to the amount supplied from the chemical liquid nozzle 41 is discharged from the storage tank formed by the paddle ring 60 and the wafer W.

W substrate (wafer)
31 Substrate holding part 33 Rotation drive part 40 Treatment liquid supply part 52 Shielding wall 60 Enclosing member (paddle ring)
61 Bottom wall 62 Side wall 63 Elevating mechanism (relative vertical direction position changing mechanism)
G gap CHM treatment liquid (chemical)