JP2015220237A - Sheet-like resin composition and method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sheet-like resin composition which makes it possible to perform the alignment for mounting a semiconductor device in a simple manner without changing an existing process; and a method for manufacturing a semiconductor device by use of such a sheet-like resin composition.SOLUTION: A sheet-like resin composition for filling a space between an adherend and a semiconductor device electrically connected with the adherend has a parallel transmittance of 10% or more. The sheet-like resin composition preferably has a haze of 80% or less. It is preferable that the sheet-like resin composition exhibits a transmittance of 15% or more for a wavelength 580 nm.

Description

  The present invention relates to a sheet-shaped resin composition and a method for manufacturing a semiconductor device.

  In recent years, there has been a further demand for thinner and smaller semiconductor devices and their packages. For this purpose, flip chip type semiconductor devices in which a semiconductor element such as a semiconductor chip is mounted on a substrate by flip chip bonding (flip chip connection) are widely used. In flip-chip connection, the circuit surface of the semiconductor chip is opposed to the electrode forming surface of the adherend (face down), and the protruding electrode formed on the circuit surface of the semiconductor chip and the electrode of the adherend are joined. It is an implementation method fixed by.

  After flip chip connection, the space between the semiconductor element and the substrate is filled with a sealing resin in order to protect the surface of the semiconductor element and ensure the connection reliability between the semiconductor element and the substrate. . As such a sealing resin, although a liquid sealing resin is widely used, it is difficult to adjust the injection position and the injection amount with the liquid sealing resin. Therefore, a technique for filling a space between a semiconductor element and a substrate using a sheet-shaped sealing resin (so-called underfill sheet) has been proposed (Patent Document 1).

  In general, in a process using a sheet-shaped resin composition as an underfill sheet, a sheet-shaped resin composition attached to a semiconductor element is filled with a space between an adherend such as a substrate and the semiconductor element. A procedure of connecting a semiconductor element to an adherend and mounting is adopted.

  In the process as described above, the space between the adherend and the semiconductor element can be easily filled. On the other hand, with the narrowing of the circuit width and the distance between terminals in the semiconductor element, if even a slight deviation occurs when matching to the connection position at the time of mounting, it leads to damage of the semiconductor element or bonding failure at the time of mounting, As a result, the yield of semiconductor device manufacturing may be reduced.

  Regarding positioning at the time of mounting, since the sheet-shaped resin composition is previously laminated on the semiconductor element, the alignment mark given to the semiconductor element at the time of alignment of the semiconductor element and the substrate at the time of mounting the semiconductor element is the sheet-shaped resin. Need to be recognized through the composition. However, since it is assumed that the sheet-shaped resin composition is disposed in the space between the adherend and the semiconductor element, the visibility of the alignment mark is not sufficiently taken into consideration, and thus the semiconductor element When mounting the semiconductor device, it may be difficult to accurately align the semiconductor element and the substrate.

  On the other hand, a technique for improving the visibility of the alignment mark by irradiating the sheet-shaped resin composition with oblique light at the time of alignment has been proposed (Patent Document 2).

Patent No. 4438973 JP 2014-3274 A

  However, although the above technique improves the visibility of the alignment mark, it is necessary to separately prepare an apparatus for oblique light irradiation, leading to an increase in the cost of production of the semiconductor device.

  An object of the present invention is to provide a sheet-shaped resin composition capable of easily performing alignment for mounting a semiconductor element without changing an existing process, and a method for manufacturing a semiconductor device using the same. To do.

  The inventors of the present application have conducted intensive studies and found that the object can be achieved by adopting the following configuration, and have completed the present invention.

That is, the present invention is a sheet-shaped resin composition for filling a space between an adherend and a semiconductor element electrically connected to the adherend,
The present invention relates to a sheet-shaped resin composition having a parallel transmittance of 10% or more.

  In the sheet-shaped resin composition, the parallel transmittance is set to 10% or more. Therefore, the transmittance of the normal incident light and the reflected light frequently used in the conventional process is increased in the sheet-shaped resin composition, and oblique light is reduced. The alignment mark can be visually recognized without using it. Thereby, alignment for mounting can be performed with high accuracy without changing an existing process, and a semiconductor device can be manufactured efficiently.

  The haze of the sheet-shaped resin composition is preferably 80% or less. Moreover, it is preferable that the transmittance | permeability in wavelength 580nm is 15% or more in the said sheet-like resin composition. By satisfying one or both of these characteristics, it is possible to further increase the passing rate of vertically incident light and its reflected light in the sheet-shaped resin composition, and to further improve the visibility of the alignment mark.

  The sheet-shaped resin composition contains an inorganic filler, and the average particle size of the inorganic filler is preferably 300 nm or less. This makes it possible to deal with a wide range of wavelength bands contained in normal incident light, increasing the transparency of the sheet-like resin composition, and the parallel transmittance required for accurate alignment between the semiconductor element and the adherend. Can be secured more suitably.

  In the said sheet-like resin composition, it is preferable that content of the said inorganic filler is 70 weight% or less. Thereby, the parallel transmittance | permeability of the said sheet-like resin composition can be raised more.

  The thickness of the sheet-shaped resin composition is preferably 70 μm or less. As a result, it is possible to reduce the length of the path through which the light beam should pass in the sheet-shaped resin composition, and it is possible to increase the utilization efficiency of the normal incident light and the reflected light to further improve the visibility of the alignment mark. .

The present invention also provides a semiconductor device comprising an adherend, a semiconductor element electrically connected to the adherend, and a sheet-shaped resin composition that fills a space between the adherend and the semiconductor element. A manufacturing method of
The semiconductor element and the adherend are irradiated with normal incident light on the exposed surface of the sheet-shaped resin composition bonded to one of the semiconductor element or the adherend and the other of the semiconductor element or the adherend, respectively. A position alignment step for aligning the relative positions of the semiconductor element and the semiconductor element, and the space between the adherend and the semiconductor element with the sheet-shaped resin composition while filling the space between the adherend and the semiconductor element with the connection member. The present invention relates to a method for manufacturing a semiconductor device including a step of electrically connecting an adherend.

  In the manufacturing method, since a sheet-shaped resin composition having a parallel transmittance of 10% or more is used, normal incident light is irradiated to the exposed surface of the sheet-shaped resin composition without preparing a special lighting device. Only by doing so, the position of the semiconductor element can be accurately detected. As a result, the alignment of the semiconductor element and the adherend to the planned connection position can be easily performed, and as a result, the semiconductor device can be efficiently manufactured without any special change in the existing process. .

It is a cross-sectional schematic diagram which shows the sheet-like resin composition which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention.

  Embodiments of the present invention will be described below with reference to the drawings. However, in some or all of the drawings, parts unnecessary for the description are omitted, and there are parts shown enlarged or reduced for easy explanation. Further, terms indicating the positional relationship such as up and down are used merely for ease of explanation unless otherwise specified, and there is no intention to limit the configuration of the present invention.

<< First Embodiment >>
<Sheet-shaped resin composition>
The sheet-shaped resin composition in the present embodiment can be used as a sealing film that fills a space between a surface-mounted semiconductor element and an adherend. As shown in FIG. 1, the sheet-shaped resin composition 2 of this embodiment is provided in the state laminated | stacked on the base material 1. As shown in FIG.

  The parallel transmittance of the sheet-like resin composition 2 may be 10% or more. Furthermore, the parallel transmittance is preferably 30% or more, and more preferably 50% or more. The passing rate of the normal incident light and the reflected light frequently used in the conventional process in the sheet-like resin composition 2 is increased, and the alignment mark can be seen well without using other illumination devices. Thereby, alignment for mounting can be performed with high accuracy without changing an existing process, and a semiconductor device can be manufactured efficiently. If the parallel transmittance of the sheet-like resin composition 2 is less than 10%, the transmittance of the normal incident light and the reflected light thereof is lowered, and the visibility of the alignment mark is impaired, resulting in a decrease in mounting accuracy. May cause.

  The haze of the sheet-shaped resin composition 2 is preferably 80% or less, more preferably 60% or less, and further preferably 40% or less. Moreover, in the sheet-like resin composition 2, the transmittance at a wavelength of 580 nm is preferably 15% or more, more preferably 30% or more, and further preferably 45% or more. By satisfying one or both of these characteristics, it is possible to further increase the passing rate of vertically incident light and its reflected light in the sheet-shaped resin composition, and to further improve the visibility of the alignment mark.

  Examples of the constituent material of the sheet-shaped resin composition 2 include a combination of a thermoplastic resin and a thermosetting resin. A thermoplastic resin or a thermosetting resin alone can also be used.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples include polymers as components. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2 -Ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, dodecyl group and the like.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities or the like that corrode semiconductor elements is preferable. Moreover, a phenol resin is preferable as the curing agent for the epoxy resin.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. Biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate Type or glycidylamine type epoxy resin is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin, for example, a novolac type phenol resin such as a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a nonylphenol novolac resin, Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  In addition, in this invention, the sheet-like resin composition using an epoxy resin, a phenol resin, and an acrylic resin is especially preferable. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured. In this case, the mixing ratio of the epoxy resin and the phenol resin is 10 to 200 parts by weight with respect to 100 parts by weight of the acrylic resin component.

  The thermosetting acceleration catalyst for epoxy resin and phenol resin is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts. A thermosetting acceleration | stimulation catalyst can be used individually or in combination of 2 or more types. As the thermosetting acceleration catalyst, for example, an amine curing accelerator, a phosphorus curing accelerator, an imidazole curing accelerator, a boron curing accelerator, a phosphorus-boron curing accelerator, or the like can be used.

  A flux may be added to the sheet-like resin composition 2 in order to remove the oxide film on the surface of the solder bump and facilitate mounting of the semiconductor element. The flux is not particularly limited, and a conventionally known compound having a flux action can be used.For example, diphenolic acid, adipic acid, acetylsalicylic acid, benzoic acid, benzylic acid, azelaic acid, benzylbenzoic acid, malonic acid, 2,2-bis (hydroxymethyl) propionic acid, salicylic acid, o-methoxybenzoic acid, m-hydroxybenzoic acid, succinic acid, 2,6-dimethoxymethylparacresol, benzoic hydrazide, carbohydrazide, malonic dihydrazide, succinic acid Acid dihydrazide, glutaric acid dihydrazide, salicylic acid hydrazide, iminodiacetic acid dihydrazide, itaconic acid dihydrazide, citric acid trihydrazide, thiocarbohydrazide, benzophenone hydrazone, 4,4'-oxybisbenzenesulfonylhydrazide and Adipic acid dihydrazide, and the like. The addition amount of the flux is only required to exhibit the above flux effect, and is usually about 0.1 to 20 parts by weight with respect to 100 parts by weight of the resin component contained in the sheet-like resin composition.

  In the present embodiment, the sheet-shaped resin composition 2 may be colored as long as a parallel transmittance of 10% or more is obtained. In the sheet-like resin composition 2, the color exhibited by coloring is not particularly limited, but for example, black, blue, red, green, and the like are preferable. In coloring, it can be appropriately selected from known colorants such as pigments and dyes.

  When the sheet-like resin composition 2 of the present embodiment is previously crosslinked to some extent, a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer is added as a crosslinking agent during production. It is good. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  As the crosslinking agent, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, an adduct of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

  Moreover, an inorganic filler can be suitably mix | blended with the sheet-like resin composition 2. FIG. The blending of the inorganic filler makes it possible to impart conductivity, improve thermal conductivity, adjust the storage elastic modulus, and the like.

  Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead. And various inorganic powders made of metals such as tin, zinc, palladium, solder, or alloys, and other carbons. These can be used alone or in combination of two or more. Among these, silica, particularly fused silica is preferably used.

  The average particle size of the inorganic filler is preferably 300 nm or less, more preferably 250 nm or less, and even more preferably 200 nm or less. The average particle size is preferably 10 nm or more, and more preferably 30 nm or more. This makes it possible to deal with a wide range of wavelength bands contained in normal incident light, increasing the transparency of the sheet-like resin composition, and the parallel transmittance required for accurate alignment between the semiconductor element and the adherend. Can be secured more suitably. When the upper limit is exceeded, the transparency tends to decrease. When the lower limit is not reached, particle aggregation tends to occur, and it may be difficult to form a sheet-shaped resin composition. The average particle diameter is a value determined by a photometric particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).

  The upper limit of the content of the inorganic filler in the sheet-shaped resin composition is preferably 70% by weight or less, more preferably 65% by weight or less, and further preferably 60% by weight or less. Further, the lower limit of the content of the inorganic filler is preferably 20% by weight or more, more preferably 30% by weight or more, and further preferably 40% by weight or more. By setting the content of the inorganic filler in the above range, the low thermal expansion coefficient and good transparency of the sheet-shaped resin composition can be maintained, and the alignment between the semiconductor element and the adherend is accurately performed. be able to.

  In addition to the said inorganic filler, other additives can be suitably mix | blended with the sheet-like resin composition 2 as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  In this embodiment, it is preferable that the minimum melt viscosity in 100-200 degreeC of the said sheet-like resin composition 2 before thermosetting is 100 Pa.s or more and 20000 Pa.s or less, and is 1000 Pa.s or more and 10000 Pa.s or less. More preferably. By making minimum melt viscosity into the said range, the approach to the sheet-like resin composition 2 of the connection member 4 (refer FIG. 2A) can be made easy. Moreover, generation | occurrence | production of the void in the case of the electrical connection of the semiconductor element 5 and the protrusion of the sheet-like resin composition 2 from the space between the semiconductor element 5 and the to-be-adhered body 6 can be prevented (refer FIG. 2E). ).

The melt viscosity can be measured by a parallel plate method using a sheet-shaped resin composition as a sample without heat treatment and using a rheometer (manufactured by HAAKE, RS-1). Specifically, the gap is 100 μm, the diameter of the rotating plate is 20 mm, the rotating speed is 5 s ⁻¹ , the temperature rising rate is 10 ° C./min, the temperature is increased from 80 ° C., and the viscosity increases due to the curing reaction of the sheet-shaped resin composition. Finally, the measurement is performed up to a temperature (generally 200 ° C. or higher) at which the rotating plate can no longer rotate. What is necessary is just to read the melt viscosity at the target temperature in that case.

  Furthermore, the water absorption rate under the conditions of a temperature of 23 ° C. and a humidity of 70% of the sheet-shaped resin composition 2 before thermosetting is preferably 1% by weight or less, more preferably 0.5% by weight or less. preferable. When the sheet-like resin composition 2 has the water absorption rate as described above, absorption of moisture into the sheet-like resin composition 2 is suppressed, and generation of voids when the semiconductor element 5 is mounted is more efficiently suppressed. be able to. The lower limit of the water absorption rate is preferably as small as possible, substantially 0% by weight is preferable, and 0% by weight is more preferable.

  Although the thickness (total thickness in the case of a multilayer) of the sheet-like resin composition 2 is not particularly limited, the strength of the sheet-like resin composition 2 and the filling property of the space between the semiconductor element 5 and the adherend 6 are not limited. In consideration, it may be about 10 μm to 100 μm. In addition, what is necessary is just to set the thickness of the sheet-like resin composition 2 considering the gap between the semiconductor element 5 and the to-be-adhered body 6, and the height of a connection member suitably.

  The sheet-shaped resin composition 2 is preferably protected by the base material 1. The substrate 1 is a reinforcing material for the sheet-shaped resin composition 2 and has a function as a protective material for protecting the sheet-shaped resin composition 2 until it is put into practical use. As the substrate 1, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, a long-chain alkyl acrylate release agent, or the like can be used.

<Method for producing sheet-shaped resin composition>
The method for producing a sheet-shaped resin composition according to the present embodiment includes a step of forming the sheet-shaped resin composition 2 on the substrate 1.

  Examples of the method for forming the substrate 1 include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method. The material shown above may be used as the material of the substrate 1.

  When the substrate is used as a release film, the production method is not particularly limited. For example, a release coat layer such as a silicone layer is formed on the surface of the substrate bonded to the sheet-shaped resin composition. It can be set as a release film.

  As the step of forming the sheet-shaped resin composition 2, for example, an adhesive composition solution, which is a constituent material of the sheet-shaped resin composition, is coated on a release film as the base material 1 to form a coating layer The method of performing the process to perform and the process of drying the said coating layer after that is mentioned.

  The method for applying the adhesive composition solution is not particularly limited, and examples thereof include a method using a comma coating method, a fountain method, a gravure method, and the like. What is necessary is just to set suitably as thickness of coating so that the thickness of the sheet-like resin composition finally obtained by drying an application layer may become in the range shown above. Furthermore, it does not specifically limit as a viscosity of an adhesive composition solution, 400-2500 mPa * s is preferable in 25 degreeC, 800-2000 mPa * s is more preferable.

  What is necessary is just to perform drying of the said coating layer by throwing into a common heating furnace etc. In that case, you may spray a drying wind on a coating layer.

  The drying time is appropriately set according to the coating thickness of the adhesive composition solution, and is usually in the range of 1 to 5 minutes, preferably 2 to 4 minutes. If the drying time is less than 1 minute, the amount of the remaining solvent is large, and this may cause problems of outgas and voids in the subsequent process. On the other hand, if it exceeds 5 minutes, the curing reaction proceeds too much, and the fluidity and embedding property of the bumps of the semiconductor wafer may be reduced.

  A drying temperature is not specifically limited, Usually, it sets within the range of 70-160 degreeC. However, in the present invention, it is preferable that the drying temperature is increased stepwise as the drying time elapses. Specifically, for example, it is set within a range of 70 ° C. to 100 ° C. in the initial stage of drying (1 min or less immediately after drying), and is set within a range of 100 to 160 ° C. in the late stage of drying (over 1 min and 5 min or less). . Thereby, generation | occurrence | production of the pinhole on the surface of an application layer which arises when a drying temperature is raised rapidly immediately after coating can be prevented.

  Further, the release film may be bonded to the other surface of the sheet-shaped resin composition, and this may be used as a protective film for the sheet-shaped resin composition, and peeled off when bonded to a semiconductor wafer or the like. Thereby, the sheet-like resin composition concerning this embodiment can be manufactured.

<Method for Manufacturing Semiconductor Device>
In the method of manufacturing a semiconductor device according to the present embodiment, the exposed surface of the sheet-shaped resin composition bonded to one of the semiconductor element and the adherend and the other of the semiconductor element or the adherend are irradiated with perpendicular incident light, respectively. And a position aligning step for aligning the relative positions of the semiconductor element and the adherend to each other's planned connection positions, and filling a space between the adherend and the semiconductor element with a sheet-shaped resin composition. A step of electrically connecting the semiconductor element and the adherend via the connection member. Further, as a typical pre-step of the position alignment step, a step of preparing a sheet-like resin composition laminated on a substrate, a circuit surface on which a semiconductor wafer connecting member is formed, and the above-mentioned sheet-like resin composition Bonding step of bonding, dicing step of dicing the semiconductor wafer together with the sheet-shaped resin composition to form a semiconductor element with the sheet-shaped resin composition, and a semiconductor element with the sheet-shaped resin composition as a base material The pick-up process which peels from is mentioned. Therefore, in the position alignment process of this embodiment, normal incident light is irradiated to the exposed surface of the sheet-shaped resin composition bonded to the semiconductor element and the adherend, respectively. Hereinafter, these pre-processes and processes after the position alignment process will be described.

[Lamination process]
In the bonding step, the surface 3a of the semiconductor wafer 3 on which the connection member 4 is formed is bonded to the sheet-shaped resin composition 2 (see FIG. 2A).

(Semiconductor wafer)
As the semiconductor wafer 3, a plurality of connection members 4 may be formed on one surface 3a (see FIG. 2A), and connection members may be formed on both surfaces 3a and 3b of the semiconductor wafer 3 (not shown). ) The material of the connection member such as a bump or a conductive material is not particularly limited. For example, a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, a tin-zinc metal material, Examples thereof include solders (alloys) such as a tin-zinc-bismuth metal material, a gold metal material, and a copper metal material. The height of the connecting member is also determined according to the application, and is generally about 15 to 100 μm. Of course, the height of each connection member in the semiconductor wafer 3 may be the same or different.

  When connection members are formed on both surfaces of the semiconductor wafer, the connection members may or may not be electrically connected to each other. Examples of the electrical connection between the connection members include a connection through a via called a TSV format.

In the method for manufacturing a semiconductor device according to the present embodiment, the thickness of the sheet-shaped resin composition includes the height X (μm) of the connecting member formed on the surface of the semiconductor wafer and the thickness Y of the sheet-shaped resin composition. (Μm) preferably satisfies the following relationship.
0.5 ≦ Y / X ≦ 2

  When the height X (μm) of the connecting member and the thickness Y (μm) of the sheet-shaped resin composition satisfy the above relationship, the space between the semiconductor element and the adherend is sufficiently filled. In addition, the sheet-like resin composition can be prevented from excessively protruding from the space, and contamination of the semiconductor element by the sheet-like resin composition can be prevented. In addition, when the height of each connection member differs, the height of the highest connection member is used as a reference.

(Lamination)
First, a separator arbitrarily provided on the sheet-shaped resin composition 2 is appropriately peeled, and as shown in FIG. 2A, a surface (connection member forming surface) 3a on which the connection member 4 of the semiconductor wafer 3 is formed; The sheet-shaped resin composition 2 is opposed to the sheet-shaped resin composition 2 and the semiconductor wafer 3 is bonded (mounting process).

  The method of bonding is not particularly limited, but a method by pressure bonding is preferable. The crimping is usually performed by a known pressing means such as a crimping roll while applying a pressure of 0.1 to 1 MPa, more preferably 0.3 to 0.7 MPa. Under the present circumstances, you may make it press-fit, heating at about 40-100 degreeC. Moreover, in order to improve adhesiveness, it is also preferable to press-fit under reduced pressure (1-1000 Pa).

[Dicing process]
In the dicing process, as shown in FIG. 2B, the semiconductor wafer 3 is diced to form the semiconductor element 5 with the sheet-shaped resin composition. By passing through a dicing process, the semiconductor wafer 3 is cut into a predetermined size to be singulated (divided into small pieces), and a semiconductor element (in this embodiment, a semiconductor chip) 5 is manufactured. The semiconductor element 5 obtained here is integrated with the sheet-shaped resin composition 2 cut into the same shape. Dicing is performed according to a conventional method from the surface 3b opposite to the surface 3a on which the sheet-shaped resin composition 2 of the semiconductor wafer 3 is bonded. The alignment of the cut portion can be performed by image recognition using direct light, indirect light, or infrared (IR).

  In this step, for example, a cutting method called full cut for cutting up to the base material 1 can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Moreover, since the semiconductor wafer is bonded and fixed with excellent adhesion by the sheet-like resin composition, chip chipping and chip jump can be suppressed, and damage to the semiconductor wafer can also be suppressed. In addition, when the sheet-shaped resin composition is formed of a resin composition containing an epoxy resin, even if the sheet-shaped resin composition is cut by dicing, the paste of the sheet-shaped resin composition of the sheet-shaped resin composition protrudes on the cut surface. Can be suppressed or prevented. As a result, it is possible to suppress or prevent the cut surfaces from reattaching (blocking), and the pickup described later can be performed more satisfactorily.

  In addition, when performing the expansion of the laminated body of the base material 1 and the sheet-like resin composition 2 following a dicing process, this expansion can be performed using a conventionally well-known expansion apparatus. The expanding device includes a donut-shaped outer ring that can push down the laminated body downward via a dicing ring, and an inner ring that has a smaller diameter than the outer ring and supports the laminated body. By this expanding process, it is possible to prevent adjacent semiconductor chips from coming into contact with each other and being damaged in a pickup process described later.

[Pickup process]
In order to collect the semiconductor element 5 bonded and fixed to the sheet-like resin composition, as shown in FIG. 2C, the semiconductor element 5 with the sheet-like resin composition 2 is picked up, and the semiconductor element 5 and the sheet-like resin are picked up. The laminate A with the composition 2 is peeled from the substrate 1.

  The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up individual semiconductor elements with a needle from the base material side and picking up the pushed-up semiconductor elements with a pickup device can be mentioned. In addition, the picked-up semiconductor element 5 comprises the laminated body A integrally with the sheet-like resin composition 2 bonded by the surface 3a.

[Position alignment process]
Next, in the position alignment step, as shown in FIG. 2D, the exposed surface 2a of the sheet-shaped resin composition 2 of the semiconductor element 5 with the sheet-shaped resin composition is irradiated with the normal incident light L1 _in , By irradiating the adherend 6 with normal incident light L2 _in , the relative positions of the semiconductor element 5 and the adherend 6 are aligned with the planned connection positions. Thereby, the relative position of the semiconductor element 5 and the adherend 6 can be detected with high accuracy, and the alignment of the semiconductor element 5 and the adherend 6 to the planned connection position can be performed simply and efficiently. .

Specifically, the picked up laminate A is attached to the adherend 6 so that the surface of the semiconductor element 5 on which the connection member 4 is formed (corresponding to the circuit surface 3 a of the semiconductor wafer 3) faces the adherend 6. Place above. Next, the imaging device 13, the illumination 11 arranged on the semiconductor element 5 side of the imaging device 13 and the illumination 12 arranged on the adherend 6 side of the imaging device 13 are arranged between the stacked body A and the adherend 6. To do. Thereafter, the vertically incident light L1 _in is irradiated from the illumination 11 toward the laminate A toward the exposed surface 2a of the sheet-shaped resin composition 2. Further, the vertically incident light L2 _in is irradiated from the illumination 12 to the adherend 6. While entering the sheet-shaped resin composition 2, the reflected light L 1 _out reflected by the semiconductor element 5 is received as a reflected image by the imaging device 13, and the reflected light L 2 _out reflected by the adherend 6 is received as a reflected image by the imaging device 13. receive. Next, each received reflection image is analyzed by an image recognition device, and a deviation from a predetermined connection scheduled position is obtained. Finally, at least one of the laminate A and the adherend is obtained by the obtained deviation amount. The relative position between the semiconductor element 5 and the adherend 6 is adjusted to the expected connection position (not shown).

Normal incident light L1 _in and L2 _in (also referred to as “normally incident light L _in ”), incident substantially perpendicular to the exposed surface 2a of the sheet-shaped resin composition 2 and the surface of the adherend 6 Is done. As used herein, "substantially perpendicular to the incident", both normal and angle between an axis parallel to the traveling direction of normally incident light L _in the exposed surface 2a and the surface of the adherend 6 It means 10 degrees or less. The vertical incident light L _in the radiation beam when is (non-parallel rays), arrival point at the origin and the sheet-like resin composition 2 exposed surface 2a and the surface of the adherend 6 of the irradiation of the vertical incident light L _in Depending on the relationship, a certain amount of width may occur in the incident angle. In that case, the axis parallel to the direction _{in which} the amount of the normal incident light Lin is maximum may be incident substantially perpendicularly to the exposed surface 2a and the surface of the adherend 6.

The light source for illumination is not particularly limited, and examples thereof include halogen lamps, LEDs, fluorescent lamps, tungsten lamps, metal halide lamps, xenon lamps, and black lights. The vertical incident light L _in emitted from the light source may be either collimated light or radiation beam (non-parallel rays) but, considering the irradiation efficiency, parallel rays are preferred. However, since there is a physical limit to irradiate the vertical incident light L _in a collimated beam may be substantially parallel rays (within half angle of 30 °). The vertical incident light L _in may be polarized.

The wavelength of normally incident light L _in, reflection images from the semiconductor element 5 and the adherend 6 is obtained, it is not particularly limited as long as it does not damage the semiconductor element 5 and the adherend 6, preferably 300~900nm More preferably, it is 400 to 800 nm. When the wavelength of the oblique light is set in the above range, the sheet-shaped resin composition formed of a general material containing an inorganic filler exhibits good transparency, so that position detection can be performed more easily.

  Further, as a recognition target in the semiconductor element and the adherend 6 for position detection by vertical incident light irradiation, the connection member (for example, bump) 4 formed in the semiconductor element 5 and the adherend 6 are formed in FIG. 2D. However, the present invention is not limited to this, and any mark or structure such as a printed or engraved alignment mark, terminal, or circuit pattern can be recognized.

  In the present embodiment, not only vertically incident light but also obliquely incident light (oblique light) may be used in combination. The oblique incident light illumination such as ring illumination is arranged around the illuminations 11 and 12, and the oblique incident light is irradiated by irradiating the light with an inclination with respect to the normal line of the exposed surface 2a of the sheet-shaped resin composition 2. be able to.

[Mounting process]
In the mounting step, the semiconductor element and the adherend are electrically connected through the connecting member while filling the space between the adherend and the semiconductor element with the sheet-shaped resin composition (see FIG. 2E). Specifically, the semiconductor element 5 of the stacked body A is fixed to the adherend 6 according to a conventional method with the connection member forming surface 3a of the semiconductor element 5 facing the adherend 6. For example, the connection members (bumps in this embodiment) 4 formed on the semiconductor element 5 are brought into contact with the bonding conductive material 7 (solder or the like) attached to the connection pads of the adherend 6 and pressed. However, by melting the conductive material, the electrical connection between the semiconductor element 5 and the adherend 6 can be secured, and the semiconductor element 5 can be fixed to the adherend 6. Since the sheet-shaped resin composition 2 is affixed to the connecting member forming surface 3a of the semiconductor element 5, the semiconductor element 5 and the adherend 6 are simultaneously connected to the semiconductor element 5 and the adherend 6 at the same time. The space between is filled with the sheet-shaped resin composition 2.

  Generally, the heating condition in the mounting process is 100 to 300 ° C., and the pressurizing condition is 0.5 to 500 N. Moreover, you may perform the thermocompression-bonding process in a mounting process in multistep. For example, it is possible to adopt a procedure in which treatment is performed at 150 ° C. and 100 N for 10 seconds and then treatment is performed at 300 ° C. and 100 to 200 N for 10 seconds. By performing thermocompression bonding in multiple stages, the resin between the connection member and the pad can be efficiently removed, and a better metal-to-metal bond can be obtained.

  As the adherend 6, various substrates such as a lead frame and a circuit board (such as a wiring circuit board), and other semiconductor elements can be used. The material of the substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, a polyimide substrate, and a glass epoxy substrate.

  In the mounting process, one or both of the connection member and the conductive material are melted to connect the connection member 4 on the connection member forming surface 3a of the semiconductor element 5 and the conductive material 7 on the surface of the adherend 6. However, the temperature when the connecting member 4 and the conductive material 7 are melted is usually about 260 ° C. (for example, 250 ° C. to 300 ° C.). In the present embodiment, by forming the sheet-shaped resin composition 2 from an epoxy resin or the like, it is possible to have heat resistance that can withstand high temperatures in this mounting process. Note that the melting point of the connection member such as a bump can be measured by measuring 10 mg of a metal having the same composition as the connection member in a heating process at 5 ° C./min using DSC (Differential Scanning Calorimeter).

[Sheet-shaped resin composition curing step]
After the electrical connection between the semiconductor element 5 and the adherend 6 is made, the sheet-shaped resin composition 2 is cured by heating. Thereby, the surface of the semiconductor element 5 can be protected, and the connection reliability between the semiconductor element 5 and the adherend 6 can be ensured. It does not specifically limit as heating temperature for hardening of a sheet-like resin composition, What is necessary is just about 150-250 degreeC. In addition, this process can be abbreviate | omitted when a sheet-like resin composition hardens | cures by the heat processing in a mounting process.

[Sealing process]
Next, a sealing step may be performed to protect the entire semiconductor device 20 including the mounted semiconductor element 5. The sealing step is performed using a sealing resin. Although it does not specifically limit as sealing conditions at this time, Usually, the thermosetting of the sealing resin is performed by heating at 175 ° C. for 60 seconds to 90 seconds, but the present invention is not limited thereto, For example, it can be cured at 165 ° C. to 185 ° C. for several minutes.

  The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from sealing materials such as known sealing resins. Is more preferable. As sealing resin, the resin composition containing an epoxy resin etc. are mentioned, for example. Examples of the epoxy resin include the epoxy resins exemplified above. Moreover, as a sealing resin by the resin composition containing an epoxy resin, in addition to an epoxy resin, a thermosetting resin other than an epoxy resin (such as a phenol resin) or a thermoplastic resin may be included as a resin component. Good. In addition, as a phenol resin, it can utilize also as a hardening | curing agent of an epoxy resin, As such a phenol resin, the phenol resin illustrated above etc. are mentioned.

<< Second Embodiment >>
In the first embodiment, the sheet-shaped resin composition laminated on the base material is used as a dicing tape. In the present embodiment, after the sheet-shaped resin composition and the semiconductor wafer are bonded together, the dicing tape is used. Separately prepare the dicing. Specifically, as shown in FIG. 2A, after bonding the sheet-shaped resin composition 2 and the connection member formation surface 3a of the semiconductor wafer 3, the surface opposite to the connection member formation surface 3a of the semiconductor wafer 3 In this procedure, a dicing tape (not shown) is bonded to 3b, the substrate 1 is then peeled off, and dicing is performed from the exposed sheet-shaped resin composition 2 side. A commercially available product can be suitably used as the dicing tape. Then, a semiconductor device can be manufactured by performing the process after the position alignment process.

<< Third Embodiment >>
In the position alignment process of the first embodiment, the vertical incident light is irradiated to the exposed surface of the sheet-shaped resin composition bonded to the semiconductor element and the adherend, whereas in the present embodiment, the adherend The normal incident light is irradiated to the exposed surface of the sheet-shaped resin composition and the semiconductor element bonded to each other. Therefore, in this embodiment, an adherend to which a sheet-shaped resin composition is bonded is prepared in advance, and a semiconductor element separately manufactured by dicing a semiconductor wafer is mounted thereon. Even in this case, since the sheet-shaped resin composition having the predetermined characteristics is used, the alignment between the adherend on which the sheet-shaped resin composition is bonded and the semiconductor element should be performed with high accuracy by the irradiation of perpendicular incident light. Can do.

<< Other Embodiments >>
In the first embodiment, a laminated structure in which a sheet-shaped resin composition is laminated on a base material as a reinforcing material is adopted, whereas in the present embodiment, a sheet-shaped resin composition is applied to a dicing tape or a back surface grinding tape. A laminated structure in which objects are laminated is adopted. The dicing tape or the back surface grinding tape includes a base material and an adhesive layer provided on the base material. A sheet-like resin composition is laminated | stacked on the adhesive layer of a dicing tape or the tape for back surface grinding. Thereby, bonding of the sheet-shaped resin composition to the semiconductor wafer, back grinding and dicing of the semiconductor wafer can be performed in a series of flows, and the efficiency of the manufacturing process can be improved. Commercially available products can be suitably used for the dicing tape and the back surface grinding tape.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the present invention only to those unless otherwise specified. The term “parts” means parts by weight.

<Examples 1-3 and Comparative Examples 1-3>
(Preparation of sheet-shaped resin composition)
The following components were dissolved in methyl ethyl ketone in the proportions shown in Table 1 to prepare an adhesive composition solution having a solid content concentration of 23.6 to 60.6% by weight.

Filler 1: spherical silica (trade name “YA050C-MJI”, manufactured by Admatechs Co., Ltd., average particle size 0.05 μm (50 nm))
Filler 2: Spherical silica (trade name “YV180C-MJJ”, manufactured by Admatechs Co., Ltd., average particle size 0.18 μm (180 nm))
Filler 3: Spherical silica (trade name “SC1050-MB”, manufactured by Admatechs Co., Ltd., average particle size 0.3 μm (300 nm))
Filler 4: Spherical silica (trade name “SO-25R”, manufactured by Admatechs Co., Ltd., average particle size 0.5 μm (500 nm))
Elastomer: Acrylic acid ester polymer based on butyl acrylate-acrylonitrile (trade name “SG-P3”, manufactured by Nagase ChemteX Corporation)
Epoxy resin 1: Trade name “Epicoat 828”, manufactured by JER Corporation Epoxy resin 2: Trade name “Epicoat 1004”, manufactured by JER Corporation Phenolic resin: Trade name “MEH-7851H”, Meiwa Kasei Co., Ltd. Curing agent: Imidazole Catalyst (trade name “2PHZ-PW”, manufactured by Shikoku Kasei Co., Ltd.)

  The prepared adhesive composition solution was applied as a release liner (separator) on a release film made of a polyethylene terephthalate film having a thickness of 50 μm and then dried at 130 ° C. for 2 minutes. A sheet-shaped resin composition having a thickness of 45 μm was prepared.

[Evaluation]
The following items were evaluated using the produced sheet-shaped resin composition. The respective evaluation results are shown in Table 2.

(Measurement of haze and parallel transmittance of sheet-shaped resin composition)
The haze and parallel transmittance of the sheet-shaped resin composition were measured using a turbidimeter NDH2000 (manufactured by Nippon Denshoku Industries Co., Ltd.). The measurement was performed according to JIS K 7361.

(Measurement of transmittance at wavelength 580 nm of sheet-shaped resin composition)
The parallel transmittance of the sheet-shaped resin composition was measured using a spectrophotometer V-670 (manufactured by JASCO Corporation). The measurement was performed according to JIS K 7361.

(Alignment evaluation)
A sheet-shaped resin composition having a thickness of 40 μm was attached to a test vehicle (manufactured by Waltz) (a wafer having a thickness of 725 μm on which a bump having a height of 40 μm was formed). The affixing conditions were a temperature of 80 ° C. and an affixing pressure of 0.5 MPa under a vacuum degree of 100 Pa. Next, the sample A was diced under fixing with a dicing tape, and a semiconductor chip with a sheet-shaped resin composition was produced to obtain a sample B.

  Next, Sample B was mounted on a mounting substrate having an electrode (electrode height: 15 μm). Mounting was performed using a flip chip bonder (FC3000W) manufactured by Toray Engineering. The exposed surface of the picked up sample B sheet-shaped resin composition was irradiated with normal incident light to align the mounting position. The mounting condition was to hold at 200 ° C. for 10 seconds under a load of 0.5 MPa and then hold at 260 ° C. for 10 seconds. At the time of this alignment, the score of the flip chip bonder (a numerical value of the degree of recognition of the recognition target) is set to 7000 or more (Max: 10000 (corresponding to a reference where the sheet-shaped resin composition is not bonded)) and mounted. The case where the accuracy (distance between the bump of the semiconductor chip and the electrode of the mounting substrate) was 10 μm or less was evaluated as “◯”, and the case where it exceeded 10 μm was evaluated as “X”.

  As can be seen from Table 2, in the examples, the optical properties of the sheet-shaped resin composition were good, and there was no problem in alignment evaluation. On the other hand, in the comparative example, each optical characteristic of the sheet-like resin composition is insufficient, and in any of the alignment evaluations, a predetermined mounting accuracy was not obtained.

DESCRIPTION OF SYMBOLS 1 Base material 2 Sheet-like resin composition 3 Semiconductor wafer 3a The surface in which the connection member of the semiconductor wafer was formed 3b The surface on the opposite side to the surface in which the connection member of the semiconductor wafer was formed 4 Connection member (bump)
5 Semiconductor elements (semiconductor chips)
6 Substrate 7 Conducting material 20 Semiconductor device

Claims (7)

A sheet-shaped resin composition for filling a space between an adherend and a semiconductor element electrically connected to the adherend,
A sheet-like resin composition having a parallel transmittance of 10% or more.   The sheet-shaped resin composition according to claim 1, wherein the haze is 80% or less.   The sheet-shaped resin composition according to claim 1 or 2, wherein the transmittance at a wavelength of 580 nm is 15% or more.   The sheet-shaped resin composition according to any one of claims 1 to 3, comprising an inorganic filler, wherein the inorganic filler has an average particle size of 300 nm or less.   The sheet-shaped resin composition according to claim 4, wherein the content of the inorganic filler is 70% by weight or less.   Thickness is 70 micrometers or less, The sheet-like resin composition of any one of Claims 1-5. A method of manufacturing a semiconductor device comprising: an adherend; a semiconductor element electrically connected to the adherend; and a sheet-shaped resin composition that fills a space between the adherend and the semiconductor element. And
The normal incident light is respectively applied to the exposed surface of the sheet-shaped resin composition according to any one of claims 1 to 6 and the other of the semiconductor element or the adherend bonded to one of the semiconductor element or the adherend. Irradiating and aligning a relative position between the semiconductor element and the adherend to a connection planned position, and filling a space between the adherend and the semiconductor element with a sheet-shaped resin composition. A method for manufacturing a semiconductor device, comprising: a step of electrically connecting the semiconductor element and the adherend through the connection member.

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