JP2015216228A5 - - Google Patents
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- JP2015216228A5 JP2015216228A5 JP2014098061A JP2014098061A JP2015216228A5 JP 2015216228 A5 JP2015216228 A5 JP 2015216228A5 JP 2014098061 A JP2014098061 A JP 2014098061A JP 2014098061 A JP2014098061 A JP 2014098061A JP 2015216228 A5 JP2015216228 A5 JP 2015216228A5
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- JP
- Japan
- Prior art keywords
- wire
- height
- movable pin
- wires
- force
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
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Description
図3は、実施の形態1に係る樹脂封止型電力用半導体装置の上面図であり、モールド樹脂15を注入する前の状態を示している。モールド前のワイヤ7は、おおよそ平行に配置されており、モールド樹脂15の流動方向における上流側に短いワイヤ7が配置され、下流側に長いワイヤ7が配置されている。したがって、隣接する二つのワイヤ7に着目した場合、下流側のワイヤ7の配線長は、上流側のワイヤ7の配線長以上となっている。
FIG. 3 is a top view of the resin-encapsulated power semiconductor device according to the first embodiment, showing a state before the mold resin 15 is injected. The
ワイヤ7の移動距離の大きさについて実験検証を実施した。まずワイヤ7の変形に必要な力についてであるが、水平方向への流れによりワイヤ7が弓なり形状になるまでに必要な力は、φ300μmのアルミワイヤの場合、0.4mN〜1mNと非常に小さかった。ワイヤ7は、力を加え始めると最初は弾性変形するが、さらに力を加え続けると塑性変形が始まる。一旦ワイヤ7の塑性変形が始まると、ワイヤ7が一様な弓なり形状になるまで変形が止まらなかった。このときに形成された弧の形状は、ワイヤ7の全長をほほ同じ半径となる弧を倒した形状になった。
Experiment verification was performed about the magnitude | size of the movement distance of the
弧の形状はワイヤループ高さとワイヤ長さとの影響を受けて決まる。ところで、ワイヤループの高さは実際にはワイヤボンド装置のヘッドの軌跡をNC(Numerical Control)制御することで加工している。通常の軌跡としては、一次接続側7aをボンディングした後、垂直にツールを移動させ、所定の高さになった後にワイヤを繰り出しながら水平に移動し、その後二次接続の高さまでツールを下降させる。ツールを水平に移動する過程でワイヤ7は一次接続している箇所が固定され、そこからワイヤボンドツールに付随しているワイヤガイドとの間を結ぶ線を若干曲線上に延びて引き出される。
The shape of the arc is determined by the influence of the wire loop height and the wire length. Incidentally, the height of the wire loop is actually processed by NC ( Numerical Control) control of the trajectory of the head of the wire bonding apparatus. As a normal trajectory, after bonding the primary connection side 7a, the tool is moved vertically, moved to the horizontal while feeding the wire after reaching a predetermined height, and then lowered to the height of the secondary connection. . In the process of moving the tool horizontally, the primary connection portion of the
このプロセスによればモールド樹脂15の表面にそのような工程を経たことの痕跡が残る。可動ピンの可動体積が大きいほど、圧力が失われる関係にあることから、可動ピンの移動高さは大きくしたくないという事情がある。また可動ピンの直径も大きくしたくないという事情がある。すなわち可動ピンの強度を大きくすることは絶縁シートを用いるタイプの樹脂封止型電力用半導体装置においては得策でないといえる。可動ピンの直径としては上記の二つの理由、すなわちピンの強度と容積変化の観点から直径1.5mm〜3mmの間が適正であった。 According to this process, a trace of such a process remains on the surface of the mold resin 15 . Since there is a relationship in which the pressure is lost as the movable volume of the movable pin is larger, there is a situation where it is not desired to increase the moving height of the movable pin. There is also a circumstance that the diameter of the movable pin does not want to be increased. That is, it can be said that increasing the strength of the movable pin is not a good measure in a resin-encapsulated power semiconductor device using an insulating sheet. As the diameter of the movable pin, a diameter of 1.5 mm to 3 mm was appropriate from the above two reasons, that is, from the viewpoint of pin strength and volume change.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014098061A JP6316086B2 (en) | 2014-05-09 | 2014-05-09 | Resin-encapsulated power semiconductor device and manufacturing method thereof |
CN201410647851.5A CN105097754B (en) | 2014-05-09 | 2014-11-14 | Resin packed power semiconductor apparatus and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014098061A JP6316086B2 (en) | 2014-05-09 | 2014-05-09 | Resin-encapsulated power semiconductor device and manufacturing method thereof |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015216228A JP2015216228A (en) | 2015-12-03 |
JP2015216228A5 true JP2015216228A5 (en) | 2016-08-04 |
JP6316086B2 JP6316086B2 (en) | 2018-04-25 |
Family
ID=54577854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014098061A Active JP6316086B2 (en) | 2014-05-09 | 2014-05-09 | Resin-encapsulated power semiconductor device and manufacturing method thereof |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6316086B2 (en) |
CN (1) | CN105097754B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018110169A (en) * | 2016-12-28 | 2018-07-12 | 富士電機株式会社 | Semiconductor device and manufacturing method for semiconductor device |
US11710802B2 (en) | 2019-08-13 | 2023-07-25 | Lite-On Opto Technology (Changzhou) Co., Ltd. | Sensing device |
CN112397630A (en) * | 2019-08-13 | 2021-02-23 | 光宝光电(常州)有限公司 | Light emitting device |
JP7334655B2 (en) * | 2020-03-06 | 2023-08-29 | 三菱電機株式会社 | semiconductor equipment |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0691118B2 (en) * | 1986-11-28 | 1994-11-14 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
JPH1167808A (en) * | 1997-08-21 | 1999-03-09 | Hitachi Ltd | Semiconductor device and its manufacture |
KR100265461B1 (en) * | 1997-11-21 | 2000-09-15 | 윤종용 | Semiconductor integrated circuit device having dummy bonding wire |
JP4744320B2 (en) * | 2005-04-04 | 2011-08-10 | パナソニック株式会社 | Lead frame |
WO2008081630A1 (en) * | 2006-12-29 | 2008-07-10 | Sanyo Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5542853B2 (en) * | 2012-02-27 | 2014-07-09 | 三菱電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
JP5932555B2 (en) * | 2012-08-03 | 2016-06-08 | 三菱電機株式会社 | Power semiconductor device |
WO2014046058A1 (en) * | 2012-09-20 | 2014-03-27 | ローム株式会社 | Power module semiconductor device and inverter device, power module semiconductor device producing method, and mold |
JP6021695B2 (en) * | 2013-03-06 | 2016-11-09 | 三菱電機株式会社 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
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2014
- 2014-05-09 JP JP2014098061A patent/JP6316086B2/en active Active
- 2014-11-14 CN CN201410647851.5A patent/CN105097754B/en active Active
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