JP2015216164A - Method for manufacturing group iii nitride semiconductor, and method for manufacturing light-emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the variation in growth temperature, which would be caused by repeatedly using a MOCVD device.SOLUTION: A method for manufacturing a group III nitride semiconductor comprises the steps of: cleaning a face of a flow channel 13 opposed to a sapphire substrate 10 (step S1); performing a short deposition with a dummy substrate (step S2); and growing crystal of Group III nitride semiconductor on the sapphire substrate 10 N1 times (steps S3 to S6) after the short deposition, provided that a set temperature is raised by ΔT in each crystal growth with the increase in the number of times the crystal growth has been performed until the N2-th crystal growth (steps S3 and S4), and the set temperature is fixed at the set temperature in the N2-th crystal growth until the N1-th crystal growth after that (steps S5 and S6). Making arrangement of the set temperature like this, the difference between the set temperature and an actual growth temperature can be made smaller, and thus the variation in growth temperature can be reduced. After the end of the N1-th crystalline growth, the execution of the process step is returned back to the step S1, and the steps S1-S6 are repeated.

Description

  The present invention relates to a method for producing a group III nitride semiconductor, and suppresses variations in growth temperature caused by repeated use of an MOCVD apparatus. In particular, the present invention relates to a method for manufacturing a light emitting device made of a group III nitride semiconductor.

  In the production of a light-emitting element made of a group III nitride semiconductor, the MOCVD method is generally used as a method for growing a group III nitride semiconductor. The MOCVD method is a method in which a raw material gas is supplied onto a heated substrate and chemically reacted to form a film on the substrate. In particular, an organic metal gas is used as the raw material gas.

  When the MOCVD apparatus is used for manufacturing a light emitting device made of a group III nitride semiconductor, as the use is repeated, contamination such as reaction products and decomposition products adheres to the flow channel facing the sapphire substrate. Since this dirt causes dust to adhere to the sapphire substrate, the flow channel is periodically cleaned to remove the dirt (see Patent Documents 1 to 3).

  Patent Document 3 describes that a dummy substrate made of a single crystal of the same material as the substrate material and having a size larger than that of the substrate is disposed on the surface of the flow channel facing the substrate. It is described that dirt adhering to the dummy substrate is difficult to peel off, so that dust can be prevented from adhering to the substrate.

JP 2004-22621 A JP-A-2005-243766 JP 2005-235845 A

  However, if the flow channel is cleaned by cleaning, the emission wavelength of the light-emitting element made of a group III nitride semiconductor manufactured by the MOCVD apparatus for a while after the cleaning becomes longer with each use of the MOCVD apparatus. As a result, the emission wavelength varies. Since the emission wavelength varies depending on the growth temperature, it is considered that the growth temperature varies.

  Therefore, the present invention is to suppress the variation in growth temperature due to repeated use of the MOCVD apparatus in the method for producing a group III nitride semiconductor.

  The present invention holds a sapphire substrate on a susceptor in a flow channel, heats the sapphire substrate through the susceptor, flows a source gas into the flow channel, and grows a group III nitride semiconductor on the sapphire substrate by MOCVD. In the method for manufacturing a group III nitride semiconductor, the method includes a cleaning step of cleaning the surface of the flow channel facing the sapphire substrate when the amount of the source gas used reaches the first predetermined amount, and the amount of the source gas used after cleaning Until the second predetermined amount, which is smaller than the first predetermined amount, the set temperature of the susceptor is increased as the amount of use of the source gas increases, and when the second predetermined amount is reached, until the first predetermined amount is reached. A method for producing a group III nitride semiconductor, characterized in that the temperature is constant at a set temperature at a second predetermined amount.

  The usage amount of the raw material gas in the present invention is not necessarily the usage amount of the raw material gas, but may be a parameter related to the usage amount of the raw material gas. For example, it may be the number of times the group III nitride semiconductor is grown by replacing the sapphire substrate after the cleaning step. In addition, the operating time of the MOCVD apparatus may be used. The amount of source gas used may be the amount of Group III metal source gas, particularly Ga source gas.

  The increase in the set temperature of the susceptor up to the second predetermined amount is arbitrary as long as it is monotonously increased, but is desirably linear. The difference between the set temperature and the actual growth temperature can be further reduced.

  The sapphire substrate can be heated by induction heating. In addition, resistance heating, lamp heating, or the like can be used.

  It is desirable to perform empty deposition using a dummy substrate made of sapphire after the cleaning process and before the first crystal growth of the group III nitride semiconductor. In the subsequent crystal growth of the group III nitride semiconductor, a crystal of good quality can be obtained.

  Quartz can be used as the material of the flow channel. In addition, SUS (stainless steel) or the like can be used.

  In addition, the present invention is suitable for manufacturing a light emitting device made of a group III nitride semiconductor. In manufacturing the light emitting element, the set temperature of the susceptor may be further corrected as follows. After manufacturing the light emitting element, measure the emission wavelength of the light emitting element, calculate the difference between the measured emission wavelength and the design wavelength, multiply the difference by a predetermined coefficient, and convert it to a temperature difference to obtain a correction value. At the time of manufacturing the light emitting element, correction is made by adding a correction value to the set temperature of the susceptor. By correcting in this way, the deviation between the actual growth temperature and the set temperature is further reduced, and variations in the growth temperature can be further suppressed.

  According to the present invention, variation in the growth temperature of the group III nitride semiconductor due to repeated use of the MOCVD apparatus can be suppressed. The present invention is particularly effective for the production of a light emitting device made of a group III nitride semiconductor. This is because the light emission wavelength of the light emitting element depends on the growth temperature, and a slight variation in the growth temperature appears as a shift in the light emission wavelength.

The figure which showed the structure of the MOCVD apparatus used for manufacture of a group III nitride semiconductor. 3 is a flowchart showing a manufacturing process according to the first embodiment. The figure which showed the relationship between preset temperature in Example 1, actual temperature, and the number of RUN. The figure which showed the relationship between the actual temperature when setting temperature is fixed, and the number of times of RUN. The figure which showed the relationship between PL wavelength and the number of RUN. The figure which showed the relationship between PL wavelength and the usage-amount of TMG. The figure which showed the relationship between wavelength 5nm appearance rate and the number of times of RUN.

  Hereinafter, specific examples of the present invention will be described with reference to the drawings. However, the present invention is not limited to the examples.

  A method for producing the group III nitride semiconductor of Example 1 will be described below. First, the structure of the MOCVD apparatus used for manufacturing the group III nitride semiconductor will be described with reference to FIG. As shown in FIG. 1, the MOCVD apparatus is supplied with a susceptor 11 on which a sapphire substrate 10 is disposed, a rotating shaft 12 that rotates the susceptor 11, a source gas and a carrier gas, and forms a gas flow path above the sapphire substrate 10. And a heater 14 for heating the susceptor 11.

  The susceptor 11 is made of carbon and has a disk shape. In addition to carbon, SiC or the like can also be used. On the upper surface of the susceptor 11, there is provided a pocket 15 that is a recess for fitting and holding the sapphire substrate 10. When the sapphire substrate 10 is disposed in the pocket 15, the shape of the pocket 15 is designed so that the surface of the sapphire substrate 10 and the upper surface of the susceptor 11 are substantially flush with each other. A rotating shaft 12 is connected to the center of the lower portion of the susceptor 11, and the susceptor 11 is rotated by rotating the rotating shaft 12 about the axis.

  The flow channel 13 is made of quartz and serves as a wall surface forming a flow path for the source gas. In addition to quartz, SUS (stainless steel) or the like can be used. As shown in FIG. 1, the flow channel 13 has a wall surface parallel to the susceptor 11 above the susceptor 11, and between the wall surface and the upper surface of the susceptor 11 or the sapphire substrate 10 disposed on the susceptor 11. Becomes the flow path 16 of the source gas. The source gas is supplied in parallel to the upper surface of the susceptor 11 from one end of the flow path 16 and discharged from the opposite end.

  The heater 14 is an induction heating method and has a coil. A susceptor 11 is arranged at the center of the coil. The susceptor 11 is heated by the heater 14, and the sapphire substrate 10 is heated by heat conduction from the susceptor 11 to the sapphire substrate 10. The growth temperature of the group III nitride semiconductor is controlled by measuring the temperature of the susceptor 11 with a radiation thermometer and controlling the heater 14 based on the temperature. In addition to the dielectric heating method, a resistance heating method, a lamp heating method, or the like may be used as the heating method.

Next, a method for manufacturing a group III nitride semiconductor using this MOCVD apparatus will be described with reference to the flowchart of FIG. The starting gas used in the MOCVD method, as the nitrogen source, ammonia (NH _3), as a Ga source, trimethyl gallium _{(Ga (CH 3) 3)} , as an In source, trimethylindium _{(In (CH 3) 3)} , Trimethylaluminum (Al (CH ₃ ) ₃ ) as the Al source, silane (SiH ₄ ) as the n-type doping gas, cyclopentadienylmagnesium (Mg (C ₂ H ₅ ) ₂ ) as the p-type doping gas, carrier gas Are H ₂ and N ₂ . Of course, conventionally known materials other than these can be used as the source gas and the carrier gas.

  First, the flow channel 13 was washed to remove contaminants such as reaction products and decomposition products attached to the wall surface of the flow channel 13 (step S1 in FIG. 2). For cleaning, hydrofluoric acid or the like is used, or etching using a chlorine-based gas is used. It is not necessary to clean the entire flow channel 13, and it is sufficient to clean at least the surface facing the sapphire substrate 10 (opposing surface 13a).

  Next, a dummy substrate made of sapphire is placed in the pocket 15 of the susceptor 11, the susceptor 11 is rotated by the rotating shaft 12, the susceptor 11 is heated by the heater 14, and carrier gas and source gas are supplied into the flow channel 13. An empty deposition (empty deposition; step of initializing the facing surface 13a) was performed (step S2 in FIG. 2). The set temperature was 1100 ° C., and a 10 μm group III nitride semiconductor was laminated on the dummy substrate. This stabilizes the inside of the apparatus, and attaches miscellaneous crystals to the surface (facing surface 13a) facing the sapphire substrate 10 of the flow channel 13, and the facing surface 13a reflects light well from a transparent state. A white mirror was used. Although the detailed mechanism is unknown, when the facing surface 13a is in such a state, the quality of the crystal growth of the group III nitride semiconductor is improved compared to the case where only the facing surface 13a is cleaned. Crystals can be obtained.

  Next, in place of the dummy substrate, the sapphire substrate 10 is placed in the pocket 15 of the susceptor 11, the susceptor 11 is rotated by the rotating shaft 12, the susceptor 11 is heated by the heater 14, and the carrier gas and source gas are introduced into the flow channel 13. And a group III nitride semiconductor crystal was grown on the sapphire substrate 10. After the crystal growth is completed, the sapphire substrate 10 on which the group III nitride semiconductor is grown is replaced with another sapphire substrate 10 on which the group III nitride semiconductor is not yet grown, and again on the sapphire substrate 10 in the same manner. Group III nitride semiconductors were stacked. Using this MOCVD apparatus, the sapphire substrate 10 is replaced and the sapphire substrate 10 is repeatedly replaced until the number of times of crystal growth of the group III nitride semiconductor (RUN number) reaches N1 (N1 is a natural number of 2 or more). A physical semiconductor was laminated (steps S3 to S6 in FIG. 2). The setting of the growth temperature when growing the group III nitride semiconductor will be described in detail later.

  N1 is set according to the amount of dirt on the facing surface 13a (the amount of deposits on the facing surface 13a). For example, N1 is 100. As the number of RUN increases, the amount of contamination on the facing surface 13a gradually increases, and the possibility that the deposits peel from the facing surface 13a and adhere to the sapphire substrate 10 increases. Therefore, when the number of RUNs reaches N1 and a certain amount of dirt adheres to the facing surface 13a, the flow channel 13 is cleaned by returning to step S1. Then, after performing the empty deposition in step S2, the group III nitride semiconductor is grown again in steps S3 to S6.

  Next, the growth temperature of the group III nitride semiconductor in steps S3 to S6 will be described in detail with reference to FIG. FIG. 3 is a diagram showing the relationship between the set temperature and the number of RUN times.

  Until the number of RUNs reaches N2, the group III nitride semiconductor is repeatedly grown at the following set temperature (steps S3 and S4 in FIG. 2). The set temperature is a measured temperature obtained when the temperature of the susceptor 11 is measured by a radiation thermometer. Since it is difficult to directly measure the growth temperature of the group III nitride semiconductor, the growth temperature of the group III nitride semiconductor is controlled with this set temperature. When the RUN count is 1, the set temperature is a desired temperature T1 at which a group III nitride semiconductor is actually desired to be grown. A constant increase width ΔT (° C./RUN) set temperature every time the RUN count increases by 1 Increased. ΔT is a predetermined value in the range of 0.1 to 2.0 ° C./RUN. That is, TN = T1 + (N−1) × ΔT, 1 ≦ N ≦ N2, where ΔT is the set temperature TN when the RUN frequency is N and the temperature increase width per RUN frequency is 1 (see FIG. 3). For example, when the desired temperature T1 is 700 ° C. and ΔT is 0.2 ° C./RUN, the set temperature T10 is set to 701.8 ° C. in the tenth RUN.

  When the RUN count reaches N2, the group III nitride semiconductor is repeatedly grown at the following set temperature until it reaches N1 (steps S5 and S6 in FIG. 2). The set temperature in the range where the number of RUNs is greater than N2 and less than or equal to N1 is constant at the set temperature TN2 (= T1 + (N2-1) × ΔT) at the N2th RUN. That is, TN = TN2 = T1 + (N2-1) × ΔT, N2 <N ≦ N1.

  When the number of RUNs reaches N1, the process returns to steps S1 and S2, the number of RUNs is initialized to 0, and steps S3 to S6 are repeated again at the set temperature shown in FIG.

  The reason why the set temperature is set as described above will be described with reference to FIGS.

  First, a case where the set temperature is constant at a desired temperature T1 regardless of the number of RUNs will be described with reference to FIG. When the group III nitride semiconductor is grown, a small amount of contaminants such as reaction products (eg, miscellaneous crystals of group III nitride semiconductor) and decomposition products adhere to the facing surface 13a of the flow channel 13. As the number of RUN increases, the contamination of the facing surface 13a of the flow channel 13 also gradually increases. As the dirt increases, the facing surface 13a gradually changes from a silver-white mirror shape to black. Therefore, the amount of electromagnetic waves (mainly infrared rays) radiated from the sapphire substrate 10 is gradually increased by the facing surface 13a. Due to the increase in the amount of infrared absorption, the actual temperature (actual growth temperature of the group III nitride semiconductor) that substantially coincided with the set temperature T1 in the first RUN around the facing surface 13a is approximately linear as the number of RUN increases. It decreases (see FIG. 4).

  The reason for this temperature drop is presumed as follows. When the facing surface 13a is blackened and the amount of infrared absorption at the facing surface 13a is increased, the amount of infrared light absorbed by the gas around the facing surface 13a is decreased, and the gas temperature is decreased. As a result, the temperature difference between the susceptor 11 and the gas increases, and the amount of heat conducted from the susceptor 11 to the gas increases. As a result, the actual temperature of the susceptor 11 (in other words, the actual growth temperature of the group III nitride semiconductor) is lower than the set temperature.

  If dirt accumulates to some extent on the opposing surface 13a, the degree of black will not change any further even if the dirt increases. For this reason, the amount of infrared absorption by the facing surface 13a is constant even if the number of RUN increases. Assuming that the number of RUNs to be constant is N ′ and the actual temperature at that time is T ′, the actual temperature is constant at T ′ when the number of RUNs is N ′ or more (see FIG. 4).

  Thus, when the set temperature T1 is constant, the growth temperature of the group III nitride semiconductor varies due to the difference in the number of RUNs. In particular, in a light-emitting element, since the emission wavelength is determined by the growth temperature of the light-emitting layer, the variation in the growth temperature appears significantly as the variation in the emission wavelength.

  It is difficult to control the temperature by directly measuring the actual temperature during group III nitride semiconductor growth. Therefore, in Example 1, the difference between the set temperature and the actual temperature is made as small as possible by changing the set temperature as shown in FIG.

  As can be seen from a comparison between FIG. 3 and FIG. 4, in order to reduce the difference between the set temperature and the actual temperature, the following is preferable. First, it is desirable that the number of RUN times N2 at which the set temperature is constant be as close as possible to the number of RUN times N ′ at which the actual temperature is constant. For example, N2 is N′−10 or more and N ′ + 10 or less. More preferably, it is N′−5 or more and N ′ + 5 or less, and most preferably, N2 is made equal to N ′.

  The set temperature gradient ΔT during the RUN count up to N2 is the absolute value of the actual temperature gradient ΔT ′ (= (T′−T1) / (N−1)) during the RUN count up to N ′. It is desirable that the value be as close as possible. For example, ΔT is 0.3 to 10 times ΔT ′. More desirably, it is not less than 0.5 times and not more than 5 times ΔT ′, and most desirable is to make ΔT equal to ΔT ′.

  Note that the RUN frequency N and the temperature T ′ at that time are estimated by, for example, manufacturing the light emitting element once with the set temperature constant at T1, measuring the emission wavelength of the light emitting element, and calculating backward from the emission wavelength. Can do. Even when an element other than a light emitting element is manufactured, it is possible to estimate the RUN count N ′ and the temperature T ′ by calculating the RUN count dependency of some characteristic of the element and calculating backward from the dependency.

  The amount of contamination on the facing surface 13a may depend on the amount of source gas used, the material of the facing surface 13a of the flow channel 13, the heating method of the sapphire substrate 10, the structure of the MOCVD apparatus, etc. It is considered that it is roughly determined by the amount of use (the thickness of the group III nitride semiconductor layer to be grown). In particular, it is the amount of TMG, TMA, and TMI that are Group III metal (Ga, Al, In) sources, and the amount of Ga source TMG that occupies most of them. Therefore, the set temperature may be controlled by a parameter related to the amount of the raw material gas used. As one of such parameters, in the first embodiment, the set temperature is controlled by the number of RUNs. In addition, the set temperature may be controlled by the usage time of the MOCVD apparatus. Note that there is an approximately proportional relationship between the slope for TMG usage (° C./g) and the slope ΔT for the number of RUNs (° C./RUN), and it can be easily converted by 10 ° C./RUN≈1° C./g. A numerical value range of ΔT of 0.1 to 2.0 ° C./RUN is 0.01 to 0.2 ° C./g in terms of the amount of TMG used.

  In addition, the actual temperature gradient ΔT ′ depends on the amount of contamination on the facing surface 13a. Therefore, as described above, it is approximately determined by the thickness of the group III nitride semiconductor layer to be grown. When a light emitting element is manufactured, ΔT ′ is approximately 0.1 to 2.0 ° C./RUN. This is why the range of ΔT in Example 1 is set to 0.1 to 2.0 ° C./RUN.

  As described above, in the method for manufacturing a group III nitride semiconductor of Example 1, variations in the growth temperature of the group III nitride semiconductor can be suppressed. The manufacturing method of the group III nitride semiconductor of Example 1 is effective when used for manufacturing a light emitting device. This is because the light emission wavelength of the light emitting element depends on the growth temperature, and a slight variation in the growth temperature appears as a shift in the light emission wavelength.

  Next, various experimental examples relating to the method for producing a group III nitride semiconductor of Example 1 will be described.

[Experimental Example 1]
A light emitting element was manufactured at a constant set temperature with respect to the number of RUN times (hereinafter, referred to as a comparative example). Then, the PL wavelength for each RUN was measured. FIG. 5 is a diagram showing the relationship between the PL wavelength and the RUN count. The PL wavelength is a peak value. As shown in FIG. 5, in the first to fifteenth RUNs, the PL wavelength gradually increased approximately linearly, and the PL wavelength changed by approximately 7.5 nm. This is a change of 3.7 ° C. in terms of the growth temperature, and the slope of the change is approximately 0.26 ° C./RUN. In addition, the PL wavelength became substantially constant after the 15th RUN. FIG. 6 shows the number of RUNs converted to TMG usage. The amount of TMG used per RUN was converted to 10 g which is an average amount used. The slope of the wavelength change at the first to fifteenth RUN is approximately 0.025 ° C./g.

[Experiment 2]
Based on Experimental Example 1, a light emitting device was manufactured using the manufacturing method of Example 1 with N2 of Example 1 being 15 and ΔT being 0.2 ° C./RUN. In the case of the comparative example, the PL wavelength variation (standard deviation σ) between the RUNs was 1.1 nm, but when the light emitting device was manufactured using the manufacturing method of Example 1, the standard deviation was σ was 0.7 nm. From this result, it was found that the manufacturing method of Example 1 can suppress variation in growth temperature (variation in emission wavelength) between the RUNs.

  FIG. 7 is a diagram showing the relationship between the appearance rate of 5 nm wavelength and the number of RUN times. The appearance rate of the wavelength of 5 nm is a ratio in the range of the wavelength of 5 nm centering on the peak in the PL wavelength distribution. As shown in FIG. 7, in the case of the comparative example, the average of the appearance rate of 5 nm was 93.4%, whereas in the case of the light emitting device according to Example 1, the average of the appearance rate of 5 nm was 96. It was 1%. As described above, it was confirmed that the wavelength variation of the light emitting device of Example 1 was improved as compared with the light emitting device of the comparative example.

  In the first embodiment, the set temperature is linearly increased until the number of RUNs reaches N2. However, the set temperature is not necessarily increased linearly, and may not be linear as long as it is monotonously increased. However, it is preferable to use a linear shape because the difference between the set temperature and the actual temperature becomes smaller on average.

  Further, a correction value may be further added to the set temperature TN in the first embodiment. For example, the wavelength of the light-emitting element manufactured after the end of each RUN is measured, and the deviation between the measured emission wavelength (the peak value of the wavelength distribution) and the set wavelength is obtained, and this is converted into a temperature deviation and used as a correction value. Then, the correction value is added to the set temperature of the next RUN. By adding correction in this way, the deviation between the set temperature and the actual temperature can be further reduced.

The correction value is α × (λ ′) when the light emission wavelength of the light emitting device manufactured in the (N−1) th RUN is λ ′ (N−1), the set wavelength is λ, and the wavelength and temperature conversion coefficient is α. (N-1) -λ). That is, the correction value is a deviation between the actual temperature α × λ ′ estimated from the actually measured wavelength λ ′ and the set temperature α × λ based on the design wavelength. Therefore, if the set temperature at the Nth RUN by this correction is T ′ (N),
T ′ (N) = T1 + (N−1) × ΔT + α × (λ ′ (N−1) −λ) (2 ≦ N ≦ N2),
T ′ (N) = T1 + (N2-1) × ΔT + α × (λ ′ (N−1) −λ) (N2 <N ≦ N1),
It becomes. The value of the coefficient α varies depending on the configuration of the light emitting element, but is approximately 0.5.

  The method for producing a group III nitride semiconductor of the present invention can be used for producing various semiconductor elements made of a group III nitride semiconductor, but is particularly effective for producing a light emitting element. This is because the light emission wavelength of the light emitting element depends on the growth temperature, and a slight variation in the growth temperature appears as a shift in the light emission wavelength.

  The present invention can be used for the production of various semiconductor elements made of Group III nitride semiconductors, and is particularly effective for the production of light-emitting elements. A light-emitting element made of a group III nitride semiconductor can be used as a light source for an illumination device or a display device.

10: Sapphire substrate 11: Susceptor 12: Rotating device 13: Flow channel 13a: Opposing surface 14: Heater

Claims (9)

A sapphire substrate is held on a susceptor in a flow channel, the sapphire substrate is heated via the susceptor, a source gas is flowed to the flow channel, and a group III nitride semiconductor is grown on the sapphire substrate by MOCVD. In the method for producing a group III nitride semiconductor,
A cleaning step of cleaning the surface of the flow channel facing the sapphire substrate when the amount of the source gas used reaches a first predetermined amount;
The set temperature of the susceptor is increased with an increase in the usage amount of the raw material gas until the second predetermined amount where the usage amount of the raw material gas after cleaning is a value smaller than the first predetermined amount. When the fixed amount is reached, the set temperature at the second predetermined amount is constant until the first predetermined amount is reached.
A method for producing a group III nitride semiconductor. The amount of the source gas used is the amount of the Group III metal source gas used.
The method for producing a group III nitride semiconductor according to claim 1.   The method for producing a group III nitride semiconductor according to claim 1, wherein the amount of the source gas used is the number of times the group III nitride semiconductor is grown by replacing the sapphire substrate.   The method of manufacturing a group III nitride semiconductor according to any one of claims 1 to 3, wherein an increase in the set temperature of the susceptor is linear.   The method for producing a group III nitride semiconductor according to any one of claims 1 to 4, wherein the sapphire substrate is heated by induction heating.   6. The vacuum deposition is performed using a dummy substrate made of sapphire after the cleaning step and before the first crystal growth of the group III nitride semiconductor. A method for producing a group III nitride semiconductor as described in 1.   The method for producing a group III nitride semiconductor according to any one of claims 1 to 6, wherein the flow channel is made of quartz.   A light emitting device is manufactured by forming the group III nitride semiconductor layer on a sapphire substrate using the method for manufacturing a group III nitride semiconductor according to any one of claims 1 to 7. A method for manufacturing a light emitting device. After manufacturing the light emitting element, measure the emission wavelength of the light emitting element, calculate the difference between the measured emission wavelength and the design wavelength,
Multiply the difference by a predetermined coefficient to convert it to a temperature difference to obtain a correction value.
During the next light emitting element manufacturing, the correction value is added to the set temperature of the susceptor for correction.
The method for manufacturing a light-emitting element according to claim 8.

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