JP2015216148A - Power semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance heat dissipation in a power semiconductor module constituting a three-phase diode bridge.SOLUTION: Three external lead-out terminals 6a, 6b, 6c, and two external lead-out terminals arranged on the opposite sides of an enclosure case 6 in a distributed manner, while extending the inner ends 6a1, 6b1, 6c1, 6d1, 6e1 in a predetermined direction A, are arranged alternately. These five inner ends extend over the first row of diodes and are connected with a conductor pattern in area Bm between first and second rows. Furthermore, fifth and sixth relay conductor patterns 2e, 2f, to which the diodes are not bonded, are arranged between other conductor patterns to which the diodes are bonded. The five external lead-out terminals have equal length.

Description

  The present invention relates to a power semiconductor module constituting a three-phase diode bridge circuit, and relates to a device structure that improves its heat dissipation.

Conventionally, a three-phase diode bridge circuit is used for an AC-DC converter. FIG. 7 shows a circuit diagram of a three-phase diode bridge circuit.
As shown in FIG. 7, the three-phase diode bridge circuit has three sets (three phases) of diodes 3a and 3b, 3c and 3d, 3e and 3f connected in series, connected in parallel between the electrode 6d and the electrode 6e. In addition to the electrodes 6d and 6e, five electrodes including intermediate electrodes 6a, 6b and 6c in the series direction of each phase are led out to the outer surface of the package so as to be externally connectable.
Patent Document 1 discloses a metal heat sink, an insulating substrate mounted on the upper surface of the metal heat sink, and diodes (3a, 3b, 3c, 3d) soldered to a conductor pattern formed on the upper surface of the insulating substrate. , 3e, 3f), six connection angles which are bent plate-like conductors connecting the conductor pattern on the insulating substrate and the upper electrode of the diode, and the outer peripheral portion of the upper surface of the metal heat sink. A resin-made outer casing that holds five external lead-out terminals (6a, 6b, 6c, 6d, and 6e: shared with electrode symbols) corresponding to the terminals of the electrodes, A power semiconductor module is described in which the inner end portion of the lead-out terminal extending to the inside of the outer case is connected to the conductor pattern on the insulating substrate, and the outer end portion extends upward from the upper end of the peripheral wall portion of the outer case. (Figs. ).
In such a power semiconductor module, the heat generated in the diode is dissipated by using the heat dissipation path that conducts to the metal heat sink via the insulating substrate and the heat dissipation path that conducts to the external lead-out terminal as the main heat dissipation paths. Is done.

JP 2009-272351 A

The above prior art has the following problems.
In the power semiconductor module described in Patent Document 1, among the five external lead-out terminals, the four external lead-out terminals (6a, 6b, 6c, 6d) are the side walls constituting the long side of the outer case. It is hold | maintained at one side wall part, and an inner end part and an outer end part are extended from the said one side wall part. The remaining one external lead-out terminal (6e) is held by the other side wall portion constituting the opposite side, and the inner end portion and the outer end portion extend from the other side wall portion.
Therefore, the heat radiation path is concentrated on the one side wall portion where the four external lead terminals are held, and the heat distribution becomes uneven.
Also, the lengths of the three external lead terminals (6a, 6b, 6c) and the other two external lead terminals (6d, 6e) are not uniform. This also makes the heat distribution non-uniform.
Since the diode is not joined and the conductor pattern (reference numeral 2b5 in the same document) that relays the connection between the connection angle and the external lead-out terminal is not disposed between the diodes, the distance between the diodes is taken within a certain circuit area. Does not contribute to increase the density of the six diodes. This also makes the heat distribution non-uniform.
There is a problem that the nonuniformity of the heat distribution as described above causes deterioration of characteristics due to thermal shock in the power semiconductor module.

The present invention has been made in view of the above problems in the prior art, and an object of the present invention is to improve heat dissipation in a power semiconductor module constituting a three-phase diode bridge circuit.

The invention according to claim 1 for solving the above-described problems is that the first diode (3a), the second diode (3b), the third diode (3c), and the fourth diode are disposed between the two electrodes (6d, 6e). A diode (3d), a fifth diode (3e), and a sixth diode (3f) are connected in series, and the first diode (3a) and the second diode (3b), and the third diode (3c) and the fourth diode ( 3d), a power semiconductor module constituting a three-phase diode bridge circuit in which a fifth diode (3e) and a sixth diode (3f) are connected in parallel to each other,
Five external lead-out terminals for leading out the five electrodes each consisting of the two electrodes and an intermediate electrode corresponding to the connection point between the diodes in the series direction of the respective phases;
A metal heat sink,
An insulating substrate mounted on the upper surface of the metal heat sink;
Six conductor patterns formed on the upper surface of the insulating substrate;
7 connection angles which are bent plate-like conductors connecting the conductor pattern and the upper electrode of the diode;
An outer case that is joined to the outer peripheral portion of the upper surface of the metal heat sink and is made of a resin that holds the five external lead-out terminals, and has upper and lower end openings;
The inner end portion of each external lead-out terminal extending to the inside of the outer case is connected to the conductor pattern,
In a predetermined direction, the first row is arranged in two rows in the order of the first diode, the third diode, and the fifth diode, and the second row is arranged in the order of the second diode, the fourth diode, and the sixth diode,
The six conductor patterns are:
A first conductor pattern to which the first diode is joined;
A second conductor pattern to which a third diode is joined;
A third conductor pattern to which a fifth diode is joined;
A fourth conductor pattern in which the second diode, the fourth diode, and the sixth diode are joined together;
A fifth conductor pattern disposed between the first conductor pattern and the second conductor pattern;
A sixth conductor pattern disposed between the second conductor pattern and the third conductor pattern,
The seven connection angles are:
A first connection angle connecting the upper surface electrode of the first diode and the fifth conductor pattern;
A second connection angle connecting the upper surface electrode of the third diode and the fifth conductor pattern;
A third connection angle connecting the upper surface electrode of the third diode and the sixth conductor pattern;
A fourth connection angle connecting the upper surface electrode of the fifth diode and the sixth conductor pattern;
A fifth connection angle connecting the upper surface electrode of the second diode and the first conductor pattern;
A sixth connection angle connecting the upper surface electrode of the fourth diode and the second conductor pattern;
A seventh connection angle connecting the upper surface electrode of the sixth diode and the third conductor pattern,
The enclosing case connects the first side wall portion adjacent to the first row, the second side wall portion adjacent to the second row, and both ends of the first side wall portion and both ends of the second side wall portion. A peripheral wall portion surrounding the insulating substrate in a rectangular shape composed of two side wall portions,
The five external lead terminals are
A first external lead terminal having an inner end joined to the first conductor pattern, an intermediate portion held by the first side wall, and an outer end extending from the upper end of the first side wall;
A second external lead terminal having an inner end joined to the second conductor pattern, an intermediate portion held by the first side wall, and an outer end extending from the upper end of the first side wall;
A third external lead terminal having an inner end joined to the third conductor pattern, an intermediate portion held by the first side wall, and an outer end extending from the upper end of the first side wall;
A fourth external lead terminal having an inner end joined to the fourth conductor pattern, an intermediate portion held by the second side wall, and an outer end extending from the upper end of the second side wall;
The inner end portion is joined to the fifth or sixth conductor pattern, the intermediate portion is held by the second side wall portion, and the outer end portion is constituted by a fifth external lead terminal extending from the upper end of the second side wall portion. ,
The first, second, and third external lead terminals correspond to the intermediate electrode terminals, and the fourth and fifth external lead terminals correspond to the two electrode terminals,
The inner end includes a first external lead terminal, a fourth (or fifth) external lead terminal, a second external lead terminal, a fifth (or fourth) external lead terminal, and a third external lead along the predetermined direction. Arrange in the order of terminals,
Inner ends of the first, second, and third external lead-out terminals extend from the first side wall portion in a direction perpendicular to the predetermined direction and extend beyond the first row arrangement region between the first row and the second row. Connected to the conductor pattern in the region of
Inner end portions of the fourth and fifth external lead terminals extend from the second side wall portion in a direction perpendicular to the predetermined direction and extend beyond the second row arrangement region, and are regions between the first row and the second row. The power semiconductor module connected to the conductor pattern.

  The power semiconductor module according to claim 1, wherein the first, second, third, fourth and fifth external lead-out terminals are configured so that the inner end portions thereof have the same length. It is.

  According to a third aspect of the present invention, the first, second, third, fourth and fifth external lead-out terminals are arranged such that the tip portions of the inner end portions thereof overlap each other when viewed in the predetermined direction. The power semiconductor module according to claim 1 or claim 2.

  The invention according to claim 4 is the power semiconductor module according to claim 1 or 2, wherein an end portion of the connection angle connected to the conductor pattern is formed in a branched shape.

According to the present invention, the three external lead-out terminals and the two external lead-out terminals are distributed on the opposite sides of the outer casing, and the five inner end portions extend from the opposite sides along the predetermined direction. Since the objects to be arranged are alternately arranged and distributed, the heat distribution is made uniform when the diode generates heat.
Further, these five inner end portions are connected to the conductor pattern in the region between the first row and the second row beyond the first row of diodes, so that they are naturally formed to be almost equally long, and are intentionally equally long. It is easy to do so, and the heat distribution is made uniform when the diode generates heat.
Further, since the fifth and sixth conductor patterns to which the diode is not joined are arranged between other conductor patterns to which the diode is joined, it contributes to taking a distance between the diodes within a certain circuit area. By reducing the density of the six diodes, the heat distribution can be made uniform when the diodes generate heat.
As described above, in the power semiconductor module constituting the three-phase diode bridge circuit, the heat dissipation can be improved, the thermal shock is alleviated, and the characteristics are improved.
Furthermore, the first, second, third, fourth and fifth external lead-out terminals can be arranged such that the tip portions of the inner end portions thereof are overlapped when viewed in the predetermined direction, By doing so, each inner end can be formed longer.
If the inner end can be formed longer, the thermal capacity of the terminal can be improved in the space in the outer case above the insulating substrate, and thermal shock can be mitigated. In addition, if the inner end portion is formed long, it is possible to improve the ease of elastic bending of the inner end portion, it is possible to relieve stress in solder joining with the conductor pattern, and good electrical and thermal conductivity As a result that easy joining can be easily obtained, heat dissipation can be improved.
Even with the structure in which the end connected to the conductor pattern of the connection angle is formed in a branched shape, the ease of elastic bending of the branched branch portion can be improved, and the stress can be relieved in the solder joint with the conductor pattern. As a result, it is possible to easily obtain a joint with good electrical and thermal conductivity, and as a result, heat dissipation can be improved. In addition, the branching angle of the connection angle can alleviate thermal concentration, and since the branching is integrated, the connection work of the connection angle is not complicated, and a good electrical and thermal conductivity joining is achieved. Easy to get.

1 is a top view of a power semiconductor module according to a first embodiment of the present invention. 1 is a top view of an insulating substrate (with a diode mounted) according to a first embodiment of the present invention. It is a top view of an enclosing case (including an external lead-out terminal) according to the first embodiment of the present invention. 1 is a top view of a power semiconductor module according to a first embodiment of the present invention. 1 is a top view of an insulating substrate (with a diode mounted) according to a first embodiment of the present invention. It is a top view of an enclosing case (including an external lead-out terminal) according to the first embodiment of the present invention. It is a circuit diagram which shows a three-phase diode bridge circuit.

  An embodiment of the present invention will be described below with reference to the drawings. The following is one embodiment of the present invention and does not limit the present invention.

[Basic circuit configuration]
The power semiconductor modules of the first and second embodiments described below constitute the three-phase diode bridge circuit 20 shown in FIG.
As shown in FIG. 7, the three-phase diode bridge circuit includes a first diode 3a and a second diode 3b, a third diode 3c and a fourth diode 3d, and a fifth diode 3e and a sixth diode between two electrodes 6d and 6e. Each of the diodes 3f is connected in series, and the first diode 3a and the second diode 3b, the third diode 3c and the fourth diode 3d, and the fifth diode 3e and the sixth diode 3f are connected in parallel to each other. Others are as shown in FIG.
In the following first and second embodiments, common reference numerals are used for corresponding parts, but specific shapes, arrangements, and the like are based on those shown in the drawings.

[First Embodiment]
First, the power semiconductor module of the first embodiment will be described with reference to FIGS.
As shown in FIG. 1 to FIG. 3, the power semiconductor module of this embodiment includes five external lead-out terminals 6a, 6b, 6c, 6d, 6e (shared with the reference numerals of the corresponding electrodes in FIG. 7), and metal heat dissipation. The board 1, the insulating substrate 2 mounted on the upper surface of the metal heat sink 1, the six conductor patterns 2a, 2b, 2c, 2d, 2e, 2f formed on the upper surface of the insulating substrate 2, and these conductor patterns 7, 7 connection angles 4 a, 4 b, 4 c, 4 d, 4 e, 4 f, 4 g that are bent plate-like conductors connecting any one of the diode upper electrode and any one of the diode upper surface electrodes, and an enclosing case 6.

The lower end of the outer case 6 is joined to the outer peripheral portion of the upper surface of the metal heat sink 1. The structure is made of resin and has upper and lower end openings that hold five external lead-out terminals 6a, 6b, 6c, 6d, and 6e. It is configured by filling a molding die in which five external lead-out terminals 6a, 6b, 6c, 6d, and 6e are inserted with resin.
The five external lead-out terminals 6a, 6b, 6c, 6d, and 6e are five electrodes including the two electrodes 6d and 6e shown in FIG. 7 and intermediate electrodes 6a, 6b, and 6c in the series direction of the respective phases. Are derived so as to be externally connectable. The external lead-out terminal and the connection angle can be implemented by bending a metal plate member such as copper.
The portions of the external lead-out terminals 6a, 6b, 6c, 6d, and 6e that are embedded and held in the outer case 6 are intermediate portions (no reference numerals), and the inner end portions 6a1, 6b1, 6c1, 6d1, 6e1, and the outer end portions 6a2. , 6b2, 6c2, 6d2, and 6e2 are portions exposed from the resin material of the outer casing 6.
Inner end portions 6a1, 6b1, 6c1, 6d1, and 6e1 extending inside the outer casing 6 of the respective external lead terminals 6a, 6b, 6c, 6d, and 6e are connected to the conductor pattern at the front end portions thereof.

  In particular, as can be seen by referring to FIG. 2, in the predetermined direction A, the first column is the first diode 3a, the third diode 3c, and the fifth diode 3e, and the second column is the second diode 3b, the fourth diode 3d, The sixth diodes 3f are arranged in two rows in this order. In the present embodiment, the predetermined direction A is a direction from the left to the right in the drawing in a direction along the long side direction of the module. It is not particularly limited to this, and the module can be implemented with a square shape. However, it is preferable that the predetermined direction A in which the three diodes are arranged as in the present embodiment be the long side direction of the module, particularly the long side direction of the insulating substrate 2. It is possible to disperse and arrange six diodes by using the same area between the three diodes arranged in the predetermined direction A and the interval between the two diodes arranged in the direction B perpendicular to this while using the area on the insulating substrate 2 without waste. It is easy.

The six conductor patterns include a first conductor pattern 2a to which the first diode 3a is joined, a second conductor pattern 2b to which the third diode 3c is joined, and a third conductor pattern 2c to which the fifth diode 3e is joined. , The fourth conductor pattern 2d in which the second diode 3b, the fourth diode 3d, and the sixth diode 3f are joined together, and the fifth conductor pattern 2e disposed between the first conductor pattern 2a and the second conductor pattern 2b. And a sixth conductor pattern 2f disposed between the second conductor pattern 2b and the third conductor pattern 2c.
That is, these six conductor patterns are independent patterns that are not connected to each other on the insulating substrate 2, and the lower electrode of the second diode 3b, the fourth diode 3d, and the sixth diode 3f is a common fourth conductor pattern. By being joined to 2d, they are electrically connected to each other.

  As shown in FIG. 1, the seven connection angles include a first connection angle 4a that connects the upper surface electrode of the first diode 3a and the fifth conductor pattern 2e, an upper surface electrode of the third diode 3c, and the fifth conductor pattern 2e. A second connection angle 4b for connecting the upper electrode of the third diode 3c and the sixth conductor pattern 2f, and an upper electrode of the fifth diode 3e and the sixth conductor pattern 2f. The fourth connection angle 4d, the fifth connection angle 4e connecting the upper surface electrode of the second diode 3b and the first conductor pattern 2a, and the second connection angle connecting the upper surface electrode of the fourth diode 3d and the second conductor pattern 2b. 6 connection angle 4f and 7th connection angle 4g which connects the upper surface electrode of 6th diode 3f, and the 3rd conductor pattern 2c.

  The outer casing 6 includes a first side wall 5a adjacent to the first row of diodes 3a, 3c, 3e, a second side wall 5b adjacent to the second row of diodes 3b, 3d, 3f, and the first side wall 5a. A peripheral wall portion (5a, 5b, 5c, 5d) that surrounds the insulating substrate 2 in a rectangular shape composed of two side wall portions 5c, 5d facing and connecting both ends of the second side wall portion 5b. Further, mounting portions 5e and 5f are provided outside the side wall portions 5c and 5d. Bolt insertion holes or notches are formed at both ends of the mounting portions 5e and 5f and the metal heat sink 1 overlapping therewith.

  As shown in FIGS. 1 and 3, the five external lead-out terminals have an inner end 6a1 joined to the first conductor pattern 2a, an intermediate portion held by the first side wall 5a, and an outer end 6a2 being the first. The first external lead terminal 6a extending from the upper end of the side wall part 5a and the inner end part 6b1 are joined to the second conductor pattern 2b, the intermediate part is held by the first side wall part 5a, and the outer end part 6b2 is the first. The second external lead-out terminal 6b extending from the upper end of the side wall part 5a and the inner end part 6c1 are joined to the third conductor pattern 2c, the middle part is held by the first side wall part 5a, and the outer end part 6c2 is the first. The third external lead-out terminal 6c extending from the upper end of the side wall portion 5a and the inner end portion 6d1 are joined to the fourth conductor pattern 2d, the middle portion is held by the second side wall portion 5b, and the outer end portion 6d2 is the second end. A fourth external lead-out terminal 6d extending from the upper end of the side wall 5b, and an inner end 6e1 Is joined to the sixth conductor pattern 2f, the intermediate portion is held by the second side wall portion 5b, and a fifth external leadout terminals 6e of the outer end portion 6e2 is extending from the upper end of the second side wall 5b, in constructed.

The inner end portions 6a1, 6b1, 6c1, 6d1, and 6e1 are arranged along a predetermined direction A with the inner end portion 6a1 of the first external lead terminal, the inner end portion 6d1 of the fourth external lead terminal, and the inner ends of the second external lead terminal. The portion 6b1, the inner end 6e1 of the fifth external lead-out terminal, and the inner end 6c1 of the third external lead-out terminal are arranged in this order.
It is also possible to implement a form in which the arrangement of the fourth external lead-out terminal 6d and the fifth external lead-out terminal 6e is switched and the inner end portion 6e1 of the fifth external lead-out terminal 6e is joined to the fifth conductor pattern 2e. In this case, in FIG. 1, the fourth conductor pattern 2 d can be changed to a horizontally inverted pattern, and the fifth conductor pattern 2 e can be changed to be longer in the direction B and the sixth conductor pattern 2 f can be changed to be shorter in the direction B. In this case, the inner end portions 6a1, 6b1, 6c1, 6d1, and 6e1 are, along the predetermined direction A, the inner end portion 6a1 of the first external lead terminal, the inner end portion 6e1 of the fifth external lead terminal, and the second external lead terminal. The inner end portion 6b1, the inner end portion 6d1 of the fourth external lead-out terminal, and the inner end portion 6c1 of the third external lead-out terminal are arranged in this order. This is not a problem related to substantial difference but is related to left-right symmetry. In the structure as shown in FIG. 1, if the predetermined direction A is determined from right to left, the order of the fifth external lead-out terminals 6e will be described. Is between the first and third external lead-out terminals.
In any case, by alternately arranging the one extending from the first side wall portion 5a and the one extending from the second side wall portion 5b, it is possible to disperse the six external lead-out terminals and to distribute the heat. Can be made uniform.

Further, the inner end portions 6a1, 6b1, 6c1 of the first, second, and third external lead terminals extend from the first side wall portion 5a in the direction B perpendicular to the predetermined direction A, and the diodes 3a, 3c, 3e in the first column. Is connected to the conductor patterns 2a, 2b, and 2c in a region Bm between the first and second rows beyond the array region B1. Inner ends 6d1 and 6e1 of the fourth and fifth external lead-out terminals extend in the direction B perpendicular to the predetermined direction A from the second side wall 5b and exceed the arrangement region b2 of the diodes 3b, 3d and 3f in the second row. The conductor patterns 2d and 2f are connected in a region Bm between the first row and the second row.
As a result, the inner end portions 6a1, 6b1, 6c1, 6d1, 6e1 are naturally formed to be almost equally long and can be intentionally made to be equally long. The diodes 3a, 3b, 3c, 3d, 3e, The heat distribution is made uniform during the heat generation of 3f. In the present embodiment, the inner end portions 6a1, 6b1, 6c1, 6d1, and 6e1 are actually configured to have the same length.
All of the five inner end portions 6a1, 6b1, 6c1, 6d1, and 6e1 reach the region Bm beyond the arrangement region B1 or B2, and are formed equally long.
By forming the inner end portions 6a1, 6b1, 6c1, 6d1, and 6e1 long, the thermal capacity of the terminals can be improved in the space inside the outer casing 6 above the insulating substrate 2, and the thermal shock can be mitigated.
Further, if the inner end portions 6a1, 6b1, 6c1, 6d1, and 6e1 are formed long, it is possible to improve the ease of elastic bending of the inner end portions. Thereby, the stress of inner end part 6a1, 6b1, 6c1, 6d1, 6e1 at the time of solder joining with a conductor pattern and after that can be relieved. Therefore, the occurrence of defects such as voids and cracks in the solder joints can be suppressed. Therefore, as a result of easily obtaining good electrical and thermal conductivity joining between the inner end portion and the conductor pattern, heat dissipation can be improved.
In the present embodiment, the ends connected to the conductor patterns of the connection angles 4a-4g are formed in a branched shape. This can also improve the ease of elastic bending of the branched branches, relieve stress in solder joints with the conductor pattern, and easily obtain joints with good electrical and thermal conductivity. As a result, heat dissipation can be improved. Further, the branching of the connection angles 4a-4g can alleviate the thermal concentration. Since the branching is integrated, the connection work of the connection angles 4a-4g is not complicated, and the electrical and thermal conductivity is reduced. Can be easily obtained.
Furthermore, as described above, the fifth and sixth conductor patterns 2e and 2f to which the diode is not joined are arranged between the other conductor patterns (2a and 2b, 2b and 2c) to which the diode is joined, so that the constant This contributes to the distance between the diodes in the predetermined direction A within the circuit area, and by reducing the density of the six diodes 3a to 3f, the heat distribution can be made uniform when the diodes generate heat.
As described above, according to the power semiconductor module of the present embodiment, a three-phase diode bridge circuit can be configured, heat dissipation can be improved, thermal shock can be mitigated, and characteristics can be improved.

[Second Embodiment]
Next, a power semiconductor module according to the second embodiment will be described with reference to FIGS.
Elements corresponding to those of the first embodiment are all denoted by common reference numerals. It has the same configuration as the first embodiment and has the same effects. However, the configuration in which the ends connected to the conductor patterns of the connection angles 4a to 4g are formed in a branched shape is not implemented.

In the present embodiment, the tip portions of the inner end portions 6a1, 6b1, 6c1, 6d1, and 6e1 are arranged so as to overlap each other when viewed in the predetermined direction A. Thereby, each inner end 6a1, 6b1, 6c1, 6d1, 6e1 can be formed longer, the thermal capacity of the terminal can be improved in the space inside the enclosing case 6 above the insulating substrate 2, and the thermal shock is alleviated. it can.
Further, if the inner end portions 6a1, 6b1, 6c1, 6d1, and 6e1 are formed long, it is possible to improve the ease of elastic bending of the inner end portions. Thereby, the stress of inner end part 6a1, 6b1, 6c1, 6d1, 6e1 at the time of solder joining with a conductor pattern and after that can be relieved. Therefore, the occurrence of defects such as voids and cracks in the solder joints can be suppressed. Therefore, as a result of easily obtaining good electrical and thermal conductivity joining between the inner end portion and the conductor pattern, heat dissipation can be improved.

  In the first embodiment, as compared with the second embodiment, the fifth to seventh connection angles 4e, 4f, 4g extend from the upper surface of the diodes 3b, 3d, 3f along the direction B to the region Bm. The fifth to seventh connection angles 4e, 4f, 4g when viewed in the predetermined direction A do not overlap with any of the first to third external lead-out terminals 6a, 6b, 6c, and the fifth connection angle as viewed in the direction B. 4e is arranged so as to overlap the first external lead-out terminal 6a, the sixth connection angle 4f overlaps the second external lead-out terminal 6b, and the seventh connection angle 4g overlaps the third external lead-out terminal 6c. An evenly distributed arrangement of the six diodes 3a to 3f is satisfactorily achieved while effectively using the area.

In the first and second embodiments described above, the diodes individually joined to the three conductor patterns 2a, 2b, and 2c are the diodes 3a, 3c, and 3e in FIG. 7, and are commonly joined to one fourth conductor pattern 2d. 7 are the diodes 3b, 3d, and 3f in FIG. 7, but the diodes individually joined to the three conductor patterns 2a, 2b, and 2c are the diodes 3b, 3d, and 3f in FIG. 7 and one fourth conductor. The diodes commonly joined to the pattern 2d may be diodes 3a, 3c, 3e in FIG. In the latter case, the symbols 6d and 6e are interchanged as shown in parentheses in FIG. The polarity of the upper and lower surfaces of the diode is reversed between the former and the latter.
As in the prior art described in Patent Document 1, the upper end opening of the outer case is closed with a resin lid, and outer end portions 6a2, 6b2, 6c2, 6d2, which pass through holes provided in the lid. 6e2 is bent so as to extend to the upper surface of the lid.

1 Metal heat sink 2 Insulating substrate 2a, 2b, 2c, 2d, 2e, 2f Conductor pattern 3a, 3b, 3c, 3d, 3e, 3f Diode 4a, 4b, 4c, 4d, 4e, 4f, 4g Connection angle 5a 1 side wall part 5b 2nd side wall part 6 Enclosing case 6a, 6b, 6c, 6d, 6e External lead-out terminal (electrode)
6a1, 6b1, 6c1, 6d1, 6e1 Inner end 6a2, 6b2, 6c2, 6d2, 6e2 Outer end

Claims (4)

Between the two electrodes (6d, 6e), the first diode (3a) and the second diode (3b), the third diode (3c) and the fourth diode (3d), the fifth diode (3e) and the sixth diode ( 3f) are connected in series, the first diode (3a) and the second diode (3b), the third diode (3c) and the fourth diode (3d), the fifth diode (3e) and the sixth diode (3f). And a power semiconductor module constituting a three-phase diode bridge circuit connected in parallel with each other,
Five external lead-out terminals for leading out the five electrodes each consisting of the two electrodes and an intermediate electrode corresponding to the connection point between the diodes in the series direction of the respective phases;
A metal heat sink,
An insulating substrate mounted on the upper surface of the metal heat sink;
Six conductor patterns formed on the upper surface of the insulating substrate;
7 connection angles which are bent plate-like conductors connecting the conductor pattern and the upper electrode of the diode;
An outer case that is joined to the outer peripheral portion of the upper surface of the metal heat sink and is made of a resin that holds the five external lead-out terminals, and has upper and lower end openings;
The inner end portion of each external lead-out terminal extending to the inside of the outer case is connected to the conductor pattern,
In a predetermined direction, the first row is arranged in two rows in the order of the first diode, the third diode, and the fifth diode, and the second row is arranged in the order of the second diode, the fourth diode, and the sixth diode,
The six conductor patterns are:
A first conductor pattern to which the first diode is joined;
A second conductor pattern to which a third diode is joined;
A third conductor pattern to which a fifth diode is joined;
A fourth conductor pattern in which the second diode, the fourth diode, and the sixth diode are joined together;
A fifth conductor pattern disposed between the first conductor pattern and the second conductor pattern;
A sixth conductor pattern disposed between the second conductor pattern and the third conductor pattern,
The seven connection angles are:
A first connection angle connecting the upper surface electrode of the first diode and the fifth conductor pattern;
A second connection angle connecting the upper surface electrode of the third diode and the fifth conductor pattern;
A third connection angle connecting the upper surface electrode of the third diode and the sixth conductor pattern;
A fourth connection angle connecting the upper surface electrode of the fifth diode and the sixth conductor pattern;
A fifth connection angle connecting the upper surface electrode of the second diode and the first conductor pattern;
A sixth connection angle connecting the upper surface electrode of the fourth diode and the second conductor pattern;
A seventh connection angle connecting the upper surface electrode of the sixth diode and the third conductor pattern,
The enclosing case connects the first side wall portion adjacent to the first row, the second side wall portion adjacent to the second row, and both ends of the first side wall portion and both ends of the second side wall portion. A peripheral wall portion surrounding the insulating substrate in a rectangular shape composed of two side wall portions,
The five external lead terminals are
A first external lead terminal having an inner end joined to the first conductor pattern, an intermediate portion held by the first side wall, and an outer end extending from the upper end of the first side wall;
A second external lead terminal having an inner end joined to the second conductor pattern, an intermediate portion held by the first side wall, and an outer end extending from the upper end of the first side wall;
A third external lead terminal having an inner end joined to the third conductor pattern, an intermediate portion held by the first side wall, and an outer end extending from the upper end of the first side wall;
A fourth external lead terminal having an inner end joined to the fourth conductor pattern, an intermediate portion held by the second side wall, and an outer end extending from the upper end of the second side wall;
The inner end portion is joined to the fifth or sixth conductor pattern, the intermediate portion is held by the second side wall portion, and the outer end portion is constituted by a fifth external lead terminal extending from the upper end of the second side wall portion. ,
The first, second, and third external lead terminals correspond to the intermediate electrode terminals, and the fourth and fifth external lead terminals correspond to the two electrode terminals,
The inner end includes a first external lead terminal, a fourth (or fifth) external lead terminal, a second external lead terminal, a fifth (or fourth) external lead terminal, and a third external lead along the predetermined direction. Arrange in the order of terminals,
Inner ends of the first, second, and third external lead-out terminals extend from the first side wall portion in a direction perpendicular to the predetermined direction and extend beyond the first row arrangement region between the first row and the second row. Connected to the conductor pattern in the region of
Inner end portions of the fourth and fifth external lead terminals extend from the second side wall portion in a direction perpendicular to the predetermined direction and extend beyond the second row arrangement region, and are regions between the first row and the second row. A power semiconductor module connected to the conductor pattern.   2. The power semiconductor module according to claim 1, wherein inner ends of the first, second, third, fourth, and fifth external lead-out terminals are configured to have an equal length.   The first, second, third, fourth, and fifth external lead-out terminals are arranged such that tip portions of the inner end portions thereof overlap each other when viewed in the predetermined direction. Power semiconductor module.   The power semiconductor module according to claim 1, wherein an end portion of the connection angle connected to the conductor pattern is formed in a branched shape.

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