JP2015212659A - Detection device, input device, input/output device, and method for driving detection device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a novel detection device, input device, and semiconductor device having excellent convenience or reliability.SOLUTION: The configuration of this invention includes a detection unit 10U that supplies a first detection signal and a second detection signal, and a conversion circuit 15 that is supplied with the first detection signal and second detection signal and can supply first detection information and second detection information. The first detection signal is supplied by a first detection unit 10(1) on the basis of a change in the potential of a first node A1 to which a gate of a first amplification transistor M10 is electrically connected and a change in the potential of a second node A2 to which a gate of a second amplification transistor M20 is electrically connected. The configuration of this invention also includes a second detection unit 10(2) that is adjacent to the first detection unit and supplies the second detection signal on the basis of a change in the potential of the first node to which a gate of the first amplification transistor is electrically connected and a change in the potential of the second node to which a gate of the second amplification transistor is electrically connected.

Description

One embodiment of the present invention relates to a detection device, an input device, an input / output device, a semiconductor device, or a driving method of the detection device.

Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, as a technical field of one embodiment of the present invention disclosed more specifically in this specification, a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof, Can be cited as an example.

The social infrastructure for information transmission means is substantial. As a result, diverse and abundant information can be acquired, processed, or transmitted not only at work and at home but also on the go using the information processing apparatus.

In such a background, portable information processing apparatuses have been actively developed.

For example, portable information processing apparatuses are often used while being carried, and unexpected force may be applied to the information processing apparatus and the display device used for the information processing due to falling. As an example of a display device that is not easily destroyed, a configuration in which adhesion between a structure that separates a light emitting layer and a second electrode layer is improved is known (Patent Document 1).

JP 2012-190794 A

An object of one embodiment of the present invention is to provide a novel detection device that is highly convenient or reliable. Another object is to provide a novel detection device driving method that is highly convenient or reliable. Another object is to provide a novel detection device, a novel detection device driving method, or a novel semiconductor device.

Note that the description of these problems does not disturb the existence of other problems. Note that one embodiment of the present invention does not have to solve all of these problems. Issues other than these will be apparent from the description of the specification, drawings, claims, etc., and other issues can be extracted from the descriptions of the specification, drawings, claims, etc. It is.

One embodiment of the present invention includes a detection unit and a conversion circuit.

The detection unit is supplied with the selection signal, the first control signal and the second control signal, the first power supply potential, and the constant current, and can supply the first detection signal and the second detection signal.

The conversion circuit is supplied with the first detection signal and the second detection signal, and can supply the first detection information based on the first detection signal and the second detection information based on the second detection signal. .

The detection unit includes a first detection unit that supplies a first detection signal based on the distance to the adjacent unit and a second detection that supplies a second detection signal based on the distance to the adjacent unit. A part.

In the first detection unit, the control terminal is electrically connected to a selection signal line that can supply a selection signal, and the first terminal can supply the first detection signal. A first switch electrically connected to the signal line.

A control terminal electrically connected to a first control line capable of supplying a first control signal, and the first terminal capable of supplying a first power supply potential; A second switch electrically connected is provided.

The gate is electrically connected to the second terminal of the second switch, the first electrode is electrically connected to the second terminal of the first switch, and the second electrode supplies a constant current. A first amplifying transistor electrically connected to the second wiring that can be configured.

The first electrode is electrically connected to the gate of the first amplification transistor, and the second electrode is electrically connected to the second control line capable of supplying the second control signal. 1 capacitive element.

The second detection unit includes a third switch whose control terminal is electrically connected to the selection signal line and whose first terminal is electrically connected to the second signal line.

The control terminal includes a fourth switch that is electrically connected to the first control line, and the first terminal is electrically connected to the first wiring.

The gate is electrically connected to the second terminal of the fourth switch, the first electrode is electrically connected to the second terminal of the third switch, and the second electrode is connected to the second wiring. A second amplifying transistor electrically connected to the first amplifying transistor.

A first capacitor electrically connected to the gate of the second amplifying transistor; and a second capacitor electrically connected to the second control line.

In one embodiment of the present invention, the detection unit includes a power source that can supply a constant current.

The second electrode of the first amplification transistor is electrically connected to a wiring that can supply a constant current supplied from the power source.

The second electrode of the second amplification transistor is electrically connected to a wiring that can supply a constant current supplied from the power source.

The power source is electrically connected to a wiring whose gate can supply a second power source potential, and the first electrode is electrically connected to a wiring capable of supplying a third power source potential. In the above detection device, the second electrode is electrically connected to the wiring to which a constant current is supplied.

Another embodiment of the present invention is the above-described detection device in which the second detection unit is disposed within 5 mm, preferably within 2.5 mm, more preferably within 1 mm from the first detection unit. .

The detection device according to one embodiment of the present invention includes a detection unit that supplies the first detection signal and the second detection signal, the first detection information and the first detection signal that are supplied with the first detection signal and the second detection signal. And a conversion circuit capable of supplying two pieces of detection information.

Note that the first detection signal includes a change in potential of the first node to which the gate of the first amplification transistor is electrically connected and a second node to which the gate of the second amplification transistor is electrically connected. Is supplied by the first detector based on a change in the potential of the first detector.

In addition, the second detection signal is generated when the potential of the first node adjacent to the first detection unit and electrically connected to the gate of the first amplification transistor and the gate of the second amplification transistor are electrically connected. Based on a change in potential of the second node to be connected, the second detection unit supplies the second node.

As a result, detection information supplied by a plurality of detection units arranged adjacent to each other can be compared to supply detection information. As a result, a novel detection device that is highly convenient or reliable can be provided.

Another embodiment of the present invention is a detection device driving method including the following steps.

A selection signal for turning on the first switch and the third switch and a first control signal for turning on the second switch and the fourth switch are supplied, and the first detection signal and the second detection signal are supplied. A first step of acquiring a signal.

In addition, a selection signal for turning on the first switch and the third switch, a first control signal for turning off the second switch and the fourth switch, and a pulsed second control signal are supplied. And a second step of acquiring the first detection signal and the second detection signal.

Also, the first detection signal supplied in the second step is compared with the first reference signal supplied in the first step to obtain the first detection information, and the first detection signal is supplied in the second step. A third step of obtaining the second detection information by comparing the second detection signal with the second reference signal supplied in the first step is provided.

And a fourth step of comparing the first detection information acquired in the third step with the second detection information to determine detection information about the object close to the detection device. This is a driving method.

In the driving method of the detection device according to one embodiment of the present invention, the first power supply potential is applied to the first node of the first detection unit and the second node of the second detection unit adjacent to the first detection unit. A first step of supplying a reference potential and obtaining a reference signal; a second step of supplying a pulse-like second control signal to the second electrodes of the first capacitor element and the second capacitor element; A second step of obtaining a difference from the reference signal obtained in step 3 and a third step of determining detection information by comparing signals obtained from a plurality of adjacent detection units. .

Accordingly, the first detection signal supplied from the first detection unit based on the change in the potential of the first node and the change in the potential of the second node and the second detection unit adjacent to the first detection unit The detection information can be supplied by comparing the second detection signal supplied based on the change in the potential of the first node and the change in the potential of the second node. As a result, it is possible to provide a novel detection device driving method that is highly convenient or reliable.

Another embodiment of the present invention is a detection unit, a selection signal line, a first control line, a first signal line, a second signal line, a second control line, and a first wiring. And an input device having a conversion circuit and a base material.

The plurality of detection units are arranged in a matrix.

The plurality of selection signal lines can be electrically connected to a plurality of detection units arranged in the row direction and supply a selection signal.

The plurality of first control lines can be electrically connected to a plurality of detection units arranged in the row direction and supply a first control signal.

The plurality of first signal lines can be electrically connected to the plurality of detection units arranged in the column direction and supply the first detection signal.

The plurality of second signal lines can be electrically connected to a plurality of detection units arranged in the column direction and supply a second detection signal.

The second control line can be electrically connected to the plurality of detection units and supply a second control signal.

The first wiring is electrically connected to the plurality of detection units and can supply the first power supply potential.

The second wiring is electrically connected to the plurality of detection units and can supply a constant current.

The conversion circuit is electrically connected to a wiring that can supply the first detection signal and a wiring that can supply the second detection signal, and can supply detection information.

The base material supports a plurality of detection units, a selection signal line, a first control line, a first signal line, a second signal line, a second control line, a first wiring, and a second wiring.

The detection unit includes a first detection unit that supplies a first detection signal based on the distance to the adjacent unit and a second detection that supplies a second detection signal based on the distance to the adjacent unit. A part.

In the first detection unit, the control terminal is electrically connected to a selection signal line that can supply a selection signal, and the first terminal can supply the first detection signal. A first switch electrically connected to the signal line.

A control terminal electrically connected to a first control line capable of supplying a first control signal, and the first terminal capable of supplying a first power supply potential; And a second switch electrically connected.

The gate is electrically connected to the second terminal of the second switch, the first electrode is electrically connected to the second terminal of the first switch, and the second electrode supplies a constant current. A first amplifying transistor electrically connected to the second wiring that can be configured.

The first electrode is electrically connected to the gate of the first amplification transistor, and the second electrode is electrically connected to the second control line capable of supplying the second control signal. 1 capacitive element.

The second detection unit includes a third switch whose control terminal is electrically connected to the selection signal line and whose first terminal is electrically connected to the second signal line.

The control terminal includes a fourth switch that is electrically connected to the first control line, and the first terminal is electrically connected to the first wiring.

The gate is electrically connected to the second terminal of the fourth switch, the first electrode is electrically connected to the second terminal of the third switch, and the second electrode is connected to the second wiring. A second amplifying transistor electrically connected to the first amplifying transistor.

In addition, the input device includes a second capacitor element in which the first electrode is electrically connected to the gate of the second amplification transistor and the second electrode is electrically connected to the second control line. .

Another embodiment of the present invention is the above input device in which the second detection unit is disposed within 5 mm, preferably within 2.5 mm, more preferably within 1 mm from the first detection unit. .

The detection device of one embodiment of the present invention includes a plurality of detection units arranged in a matrix, a first control line, a selection signal line, a first signal line, and a second signal line, A first control signal, a first wiring, a first wiring, a second wiring, a base material supporting these, a first detection signal supplied by a first detection unit provided in the detection unit, and a first And a conversion circuit that is supplied with a second detection signal supplied by a second detection unit adjacent to the detection unit and can supply detection information.

As a result, detection information supplied by a plurality of detection units arranged adjacent to each other can be compared to supply detection information. As a result, a novel detection device that is highly convenient or reliable can be provided.

Note that in this specification, an EL layer refers to a layer provided between a pair of electrodes of a light-emitting element. Therefore, a light-emitting layer containing an organic compound that is a light-emitting substance sandwiched between electrodes is one embodiment of an EL layer.

Further, in this specification, when the substance A is dispersed in a matrix made of another substance B, the substance B constituting the matrix is called a host material, and the substance A dispersed in the matrix is called a guest material. To do. Note that the substance A and the substance B may be a single substance or a mixture of two or more kinds of substances.

Note that in this specification, a light-emitting device refers to an image display device, a light-emitting device, or a light source (including a lighting device). In addition, a connector in which a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) is attached to the light emitting device, a module in which a printed wiring board is provided at the end of TCP, or a substrate on which a light emitting element is formed is COG It is assumed that the light emitting device also includes all modules on which IC (integrated circuit) is directly mounted by the (Chip On Glass) method.

In the drawings attached to the present specification, the components are classified by function, and the block diagram is shown as an independent block. However, it is difficult to completely separate the actual components for each function. May involve multiple functions.

In this specification, the terms “source” and “drain” of a transistor interchange with each other depending on the polarity of the transistor or the level of potential applied to each terminal. In general, in an n-channel transistor, a terminal to which a low potential is applied is called a source, and a terminal to which a high potential is applied is called a drain. In a p-channel transistor, a terminal to which a low potential is applied is called a drain, and a terminal to which a high potential is applied is called a source. In this specification, for the sake of convenience, the connection relationship between transistors may be described on the assumption that the source and the drain are fixed. However, the names of the source and the drain are actually switched according to the above-described potential relationship. .

In this specification, the source of a transistor means a source region that is part of a semiconductor film functioning as an active layer or a source electrode connected to the semiconductor film. Similarly, a drain of a transistor means a drain region that is part of the semiconductor film or a drain electrode connected to the semiconductor film. The gate means a gate electrode.

Note that the terms “film” and “layer” can be interchanged with each other depending on the case or circumstances. For example, the term “conductive layer” may be changed to the term “conductive film”. Alternatively, for example, the term “insulating film” may be changed to the term “insulating layer” in some cases.

In this specification, the state where the transistors are connected in series means, for example, a state where only one of the source and the drain of the first transistor is connected to only one of the source and the drain of the second transistor. To do. In addition, the state where the transistors are connected in parallel means that one of the source and the drain of the first transistor is connected to one of the source and the drain of the second transistor, and the other of the source and the drain of the first transistor is connected. It means a state of being connected to the other of the source and the drain of the second transistor.

In this specification, the connection means an electrical connection, and corresponds to a state where current, voltage, or potential can be supplied or transmitted. Therefore, the connected state does not necessarily indicate a directly connected state, and a wiring, a resistor, a diode, a transistor, or the like is provided so that current, voltage, or potential can be supplied or transmitted. The state of being indirectly connected through a circuit element is also included in the category.

In this specification, even when independent components on the circuit diagram are connected to each other, in practice, for example, when a part of the wiring functions as an electrode, In some cases, it also has the functions of the components. In this specification, the term “connection” includes a case where one conductive film has functions of a plurality of components.

In this specification, one of a first electrode and a second electrode of a transistor refers to a source electrode, and the other refers to a drain electrode.

According to one embodiment of the present invention, a novel detection device that is highly convenient or reliable can be provided. Alternatively, a novel input device that is highly convenient or reliable can be provided. Alternatively, it is possible to provide a novel detection device driving method that is highly convenient or reliable. Alternatively, a novel detection device, a novel detection device driving method, or a novel semiconductor device can be provided.

Note that the description of these effects does not disturb the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. It should be noted that the effects other than these are naturally obvious from the description of the specification, drawings, claims, etc., and it is possible to extract the other effects from the descriptions of the specification, drawings, claims, etc. It is.

The block diagram, circuit diagram, and timing chart explaining the structure of the detection apparatus which concerns on embodiment. The block diagram explaining the structure of the detection apparatus which concerns on embodiment. FIG. 4 is a projection view illustrating a structure of an input / output device according to an embodiment. FIG. 6 is a cross-sectional view illustrating a structure of an input / output device according to an embodiment. 1A and 1B are a block diagram and a circuit diagram illustrating a structure of a detection device according to an embodiment. 1A and 1B are a block diagram and a circuit diagram illustrating a structure of a detection device according to an embodiment. 3A and 3B illustrate a structure of a transistor that can be used for a detection circuit according to an embodiment. FIG. 6 is a schematic diagram illustrating a manufacturing process of a stacked body according to an embodiment. FIG. 6 is a schematic diagram illustrating a manufacturing process of a stacked body according to an embodiment. FIG. 6 is a schematic diagram illustrating a manufacturing process of a stacked body according to an embodiment. 4A and 4B are schematic diagrams illustrating a manufacturing process of a stacked body having an opening in a support according to an embodiment. The schematic diagram explaining the structure of the processing member which concerns on embodiment. FIG. 7 is a projection view illustrating a configuration of an information processing device according to an embodiment. FIG. 7 is a projection view illustrating a configuration of an information processing device according to an embodiment.

The detection device of one embodiment of the present invention includes a detection unit that supplies a first detection signal and a second detection signal, a first detection information and a second detection signal that are supplied with the first detection signal and the second detection signal. And a conversion circuit capable of supplying the detected information.

Note that the first detection signal includes a change in potential of the first node to which the gate of the first amplification transistor is electrically connected and a second node to which the gate of the second amplification transistor is electrically connected. Is supplied by the first detector based on a change in the potential of the first detector.

In addition, the second detection signal is generated when the potential of the first node adjacent to the first detection unit and electrically connected to the gate of the first amplification transistor and the gate of the second amplification transistor are electrically connected. Based on a change in potential of the second node to be connected, the second detection unit supplies the second node.

As a result, detection information supplied by a plurality of detection units arranged adjacent to each other can be compared to supply detection information. As a result, a novel detection device that is highly convenient or reliable can be provided.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

Note that the terms “film” and “layer” can be interchanged with each other depending on the case or circumstances. For example, the term “conductive layer” may be changed to the term “conductive film”. Alternatively, for example, the term “insulating film” may be changed to the term “insulating layer” in some cases.

(Embodiment 1)
In this embodiment, the structure of the detection device of one embodiment of the present invention will be described with reference to FIG.

FIG. 1 illustrates a structure of a detection device of one embodiment of the present invention. 1A is a block diagram of a detection device 10 of one embodiment of the present invention, and FIG. 1B is a circuit diagram of a detection unit 10U that can be used in the detection device 10. FIG.

<Configuration Example 1 of Detection Device>>
The detection device 10 described in the present embodiment is supplied with a selection signal, a first control signal, a second control signal, a first power supply potential, and a constant current I, and receives a first detection signal and a second detection signal. It has a detection unit 10U that can supply a signal.

Further, a conversion circuit that is supplied with the first detection signal and the second detection signal and can supply the first detection information based on the first detection signal and the second detection information based on the second detection signal. 15 Note that the conversion circuit 15 supplies the first detection information to the output terminal OUT1, and supplies the second detection information to the output terminal OUT2.

The detection unit 10U supplies the first detection signal 10 (1) based on the distance from the adjacent one and the second detection signal 10 (1) based on the distance from the adjacent one. Two detection units 10 (2) are provided.

In the first detection unit 10 (1), the control terminal is electrically connected to the selection signal line G1 that can supply a selection signal, and the first terminal supplies the first detection signal. And a first switch electrically connected to the first signal line ML1. For example, the transistor M11 can be used for the first switch (see FIG. 1B).

The control terminal is electrically connected to the first control line RES that can supply the first control signal, and the first terminal can supply the first power supply potential. A second switch electrically connected to VRES is provided. For example, the transistor M12 can be used for the second switch.

The gate is electrically connected to the second terminal of the second switch (transistor M12), the first electrode is electrically connected to the second terminal of the first switch (transistor M11), and the second The two electrodes include a first amplification transistor M10 that is electrically connected to a second wiring PW that can supply a constant current I.

The first electrode is electrically connected to the gate of the first amplification transistor M10, and the second electrode is electrically connected to the second control line CS that can supply the second control signal. The first capacitor element C1 is provided.

The second detection unit 10 (2) includes a third switch whose control terminal is electrically connected to the selection signal line G1 and whose first terminal is electrically connected to the second signal line ML2. For example, the transistor M13 can be used for the third switch.

In addition, a fourth switch is provided in which the control terminal is electrically connected to the first control line RES and the first terminal is electrically connected to the first wiring VRES. For example, the transistor M14 can be used for the fourth switch.

The gate is electrically connected to the second terminal of the fourth switch (transistor M14), the first electrode is electrically connected to the second terminal of the third switch (transistor M13), and the second The second electrode includes a second amplification transistor M20 that is electrically connected to the second wiring PW.

In addition, a second capacitor element C2 is provided in which the first electrode is electrically connected to the gate of the second amplification transistor M20, and the second electrode is electrically connected to the second control line CS. .

The second detection unit 10 (2) of the detection device 10 described in the present embodiment is preferably within 5 mm, preferably within 2.5 mm, more preferably 1 mm from the first detection unit 10 (1). It is arranged within the range.

The detection device 10 described in this embodiment includes a detection unit 10U that supplies a first detection signal and a second detection signal, and first detection information that is supplied with the first detection signal and the second detection signal. And a conversion circuit 15 capable of supplying the second detection information.

Note that the first detection signal includes a change in the potential of the first node A1 to which the gate of the first amplification transistor M10 is electrically connected and a first change in which the gate of the second amplification transistor M20 is electrically connected. Based on the change in the potential of the second node A2, it is supplied by the first detection unit 10 (1).

The second detection signal includes the potential of the first node A1 adjacent to the first detection unit 10 (1) and electrically connected to the gate of the first amplification transistor M10, and the second amplification transistor. Based on a change in potential of the second node A2 to which the gate of M20 is electrically connected, the second detection unit 10 (2) supplies the same.

As a result, detection information supplied by a plurality of detection units arranged adjacent to each other can be compared to supply detection information. As a result, a novel detection device that is highly convenient or reliable can be provided.

In the atmosphere, when an object having a dielectric constant greater than that of the atmosphere, such as a finger, approaches the conductive film, the capacitance between the finger and the conductive film changes. This change in capacitance can be detected and a detection signal can be supplied. Specifically, a conductive film and a capacitor in which one electrode is connected to the conductive film can be used. As the capacitance changes, charge distribution is caused and the voltage at the electrodes at both ends of the capacitive element changes. This change in voltage can be used as a detection signal. For example, the voltage between the electrodes of the first capacitor C <b> 1 changes due to the proximity of the conductive film electrically connected to the first electrode 11 or the second electrode 12.

<Overall configuration>
The detection device 10 includes a detection unit 10U or a conversion circuit 15.

<Detection unit>
The detection unit 10U includes a first switch, a second switch, a third switch, or a fourth switch.

In addition, the first amplifying transistor M10 or the second amplifying transistor M20 is provided.

In addition, the first capacitor element C1 or the second capacitor element C2 is provided.

The detection unit 102U includes the first detection unit 10 (1) or the second detection unit 10 (2). The second detection unit 10 (2) is preferably disposed within 5 mm, preferably within 2.5 mm, more preferably within 1 mm from the first detection unit 10 (1). Further, the position of the first detection unit 10 (1) can be known by examining the position where the first detection signal is larger than the second detection signal and the difference from the second detection signal is maximum. By checking the position where the second detection signal is larger than the first detection signal and the difference from the first detection signal is maximum, the position of the second detection unit 10 (2) can be known.

The first detection unit 10 (1) may include a first switch, a second switch, a first amplification transistor M10, and a first capacitive element C1.

The second detection unit 10 (2) may include a third switch, a fourth switch, a second amplification transistor M20, and a second capacitive element C2.

Note that the detection unit 10U may be formed using a method in which a film for forming the detection unit 10U is formed on a base material that supports the detection unit 10U and then processed.

Alternatively, the detection unit 10U may be formed using a method in which a part of the detection unit 10U is formed on another substrate and the formed part is transferred to the substrate.

An example of a manufacturing method of the detection unit 10U will be described in detail in Embodiments 6 to 8.

"switch"
A switch that can turn on or off the first terminal and the second terminal based on a control signal supplied to the control terminal can be used as the first to fourth switches. . For example, a transistor can be used. In particular, when a transistor that can be manufactured in the same process as the first amplification transistor M10 or the second amplification transistor M20 is used, the process can be simplified.

<Transistor>
The first amplification transistor M10 or the second amplification transistor M20 includes a semiconductor layer.

For example, a Group 4 element, a compound semiconductor, or an oxide semiconductor can be used for the semiconductor layer. Specifically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used for the semiconductor layer. Alternatively, an organic semiconductor can be used. Acenes such as tetracene and pentacene, oligothiophene derivatives, phthalocyanines, perylene derivatives, rubrene, Alq3, TTF-TCNQ, polythiophene (such as poly-3-hexylthiophene), polyacetylene, polyfluorene, polyphenylene vinylene, polypyrrole, polyaniline, pentacene Anthracene, rubrene, tetracyanoquinodimethane (TCNQ), polyacetylene, poly-3-hexylthiophene (P3HT), polyparaphenylenevinylene (PPV), phthalocyanine, and the like can be used for the organic semiconductor.

Note that the structure of a transistor in which an oxide semiconductor is used for a semiconductor layer is described in detail in Embodiment 5.

<Capacitance element>
A capacitor element including an insulating film and two conductive films sandwiching the insulating film can be applied to the first capacitor element C1 or the second capacitor element C2.

An organic material, an inorganic material, a composite material of an organic material and an inorganic material, or the like can be used for the insulating film.

For example, an inorganic material such as glass, ceramics, or metal can be used for the insulating material.

Specifically, alkali-free glass, soda-lime glass, potash glass, crystal glass, or the like can be used for the insulating film.

Specifically, a metal oxide film, a metal nitride film, a metal oxynitride film, or the like can be used for the insulating film. For example, silicon oxide, silicon nitride, silicon oxynitride, an alumina film, or the like can be used for the insulating film.

For example, an organic material such as resin, resin film, or plastic can be used for the insulating film.

Specifically, a resin film or a resin plate such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or acrylic resin can be used for the insulating film.

For example, a composite material in which a fibrous or particulate metal, glass, inorganic material, or the like is dispersed in a resin film can be used for the insulating film.

For example, a composite material in which a fibrous or particulate resin or an organic material is dispersed in an inorganic material can be used for the insulating film.

For example, an inorganic conductive material, an organic conductive material, a metal, conductive ceramics, or the like can be used for the conductive film.

Specifically, a metal element selected from aluminum, gold, platinum, silver, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, yttrium, zirconium, palladium, or manganese, and an alloy containing the above metal elements Alternatively, an alloy or the like in which the above metal elements are combined can be used for the wiring or the like. In particular, it is preferable that one or more elements selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten are included. In particular, an alloy of copper and manganese is suitable for fine processing using a wet etching method.

Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a tantalum nitride film or A two-layer structure in which a tungsten film is stacked over a tungsten nitride film, a titanium film, and a three-layer structure in which an aluminum film is stacked over the titanium film and a titanium film is further formed thereon can be used.

Specifically, a stacked structure in which a film of an element selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium, or a combination of alloy films or nitride films can be used on an aluminum film can be used. .

Alternatively, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used for the conductive film.

Alternatively, graphene or graphite can be used for the conductive film. The film containing graphene can be formed, for example, by reducing a film containing graphene oxide formed in a film shape. Examples of the reduction method include a method of applying heat and a method of using a reducing agent.

Alternatively, a conductive polymer can be used for the conductive film.

<< Control line, selection signal line, signal line or wiring >>
The detection device 10 is electrically connected to the first control line, the second control line, the first wiring, the second wiring, the selection signal line, the first signal line, or the second signal line.

The selection signal line G1 can supply a selection signal.

The first control line RES can supply a first control signal, and the second control line CS can supply a second control signal.

The first wiring VRES can supply the first power supply potential, and the second wiring PW can supply the constant current I.

The first signal line ML1 can supply a first detection signal, and the second signal line ML2 can supply a first detection signal.

A conductive material is used for the first control line, the second control line, the first wiring, the second wiring, the selection signal line, the first signal line, the second signal line, or the like.

For example, a material similar to that of the above conductive film that can be used for the first capacitor C1 or the second capacitor C2 can be used.

<< Conversion circuit >>
The conversion circuit 105 can convert the first detection signal and the second detection signal and supply the converted signals to the first output terminal OUT1 or the second output terminal OUT2.

Various circuits can be used for the conversion circuit 105. For example, the current may be converted into a voltage using an integration circuit.

For example, a transistor formed in the same process as the transistor included in the detection unit can be used.

<Configuration Example 2 of Detection Device>>
Another structure of the detection device of one embodiment of the present invention is described with reference to FIG.

FIG. 5 illustrates a structure of the detection device of one embodiment of the present invention. FIG. 5A is a block diagram of the detection device 10 of one embodiment of the present invention, and FIG. 1B is a circuit diagram of a detection unit 10UB that can be used in the detection device 10.

The detection unit 10UB includes a power source capable of supplying a constant current, and the second electrode of the first amplification transistor M10 and the second electrode of the second amplification transistor M20 supply a constant current. This is different from the detection unit 10U described with reference to FIG. Here, different configurations will be described in detail, and the above description is used for the portions where the same configurations can be used.

The power supply can supply a constant current, for example. Specifically, the power supply includes a transistor M0. The transistor M0 has a gate electrically connected to the wiring BIAS that can supply a power supply potential, and a first electrode has a second electrode of the first amplification transistor M10 and a second electrode of the second amplification transistor M20. The second electrode is electrically connected to the wiring VPI that can supply the power supply potential.

The transistor M0 can supply, for example, a constant current to the second electrode of the first amplification transistor M10 and the second electrode of the second amplification transistor M20.

For example, the wiring BIAS can supply the second power supply potential.

For example, the wiring VPI can supply a third power supply potential.

Note that the third power supply potential is supplied so that a voltage equal to or higher than the voltage lower than the second power supply potential by the threshold voltage of the transistor M0 is applied between the first electrode and the second electrode of the transistor M0. .

For example, in the case of using an n-type transistor, the first power supply potential is set higher than the second power supply potential, and the second power supply potential is set higher than the third power supply potential.

Note that the detection unit may be configured using a p-type transistor instead of the n-type transistor. In addition, the detection unit can be configured using an n-type transistor and a p-type transistor.

In the case where a p-type transistor is used, the first power supply potential is set lower than the second power supply potential, and the second power supply potential is set lower than the third power supply potential.

The detection unit 10UB includes a transistor M0 that supplies a constant current. Thereby, the wiring for supplying a constant current to the detection unit 10UB can be shortened. As a result, it is possible to provide a detection device that is less susceptible to noise using the detection unit 10UB.

The modification example of the detection device 10 described in this embodiment is supplied with a selection signal, a first control signal, a second control signal, a first power supply potential, a second power supply potential, and a third power supply potential. And a detection unit 10UB that can supply a first detection signal and a second detection signal (see FIG. 5A).

Further, a conversion circuit that is supplied with the first detection signal and the second detection signal and can supply the first detection information based on the first detection signal and the second detection information based on the second detection signal. 15 Note that the conversion circuit 15 supplies the first detection information to the output terminal OUT1, and supplies the second detection information to the output terminal OUT2.

The detection unit 10UB is based on the distance between the power source that can supply a constant current, the first detection unit 10 (1) that supplies the first detection signal based on the distance to the adjacent one, and the adjacent one. And a second detection unit 10 (2) for supplying a second detection signal. Note that the power supply supplies a constant current I in place of the second wiring PW (see FIG. 5B).

The power source is electrically connected to the wiring BIAS whose gate can supply the second power supply potential, the first electrode is electrically connected to the wiring capable of supplying the third power supply potential, The second electrode includes a transistor M0 that is electrically connected to a wiring that can be supplied with a constant current.

In the first detection unit 10 (1), the control terminal is electrically connected to the selection signal line G1 that can supply a selection signal, and the first terminal supplies the first detection signal. And a first switch electrically connected to the first signal line ML1. For example, the transistor M11 can be used for the first switch.

The control terminal is electrically connected to the first control line RES that can supply the first control signal, and the first terminal can supply the first power supply potential. A second switch electrically connected to VRES is provided. For example, the transistor M12 can be used for the second switch.

The gate is electrically connected to the second terminal of the second switch (transistor M12), the first electrode is electrically connected to the second terminal of the first switch (transistor M11), and the second The second electrode includes a first amplification transistor M10 that is electrically connected to a wiring that can supply a constant current supplied from a power source.

The first electrode is electrically connected to the gate of the first amplification transistor M10, and the second electrode is electrically connected to the second control line CS that can supply the second control signal. The first capacitor element C1 is provided.

The second detection unit 10 (2) includes a third switch whose control terminal is electrically connected to the selection signal line G1 and whose first terminal is electrically connected to the second signal line ML2. For example, the transistor M13 can be used for the third switch.

In addition, a fourth switch is provided in which the control terminal is electrically connected to the first control line RES and the first terminal is electrically connected to the first wiring VRES. For example, the transistor M14 can be used for the fourth switch.

The gate is electrically connected to the second terminal of the fourth switch (transistor M14), the first electrode is electrically connected to the second terminal of the third switch (transistor M13), and the second The second electrode includes a second amplification transistor M20 that is electrically connected to a wiring that can supply a constant current supplied from a power source.

In addition, a second capacitor element C2 is provided in which the first electrode is electrically connected to the gate of the second amplification transistor M20, and the second electrode is electrically connected to the second control line CS. .

Further, the second detection unit 10 (2) of the modified example of the detection device 10 described in the present embodiment is preferably within 5 mm, preferably within 2.5 mm, from the first detection unit 10 (1). Preferably, it arrange | positions in the range within 1 mm.

<Driving method of detection device>
A driving method of the detection device 10 will be described (see FIGS. 1A to 1C).

<< First Step >>
In the first step, a selection signal for turning on the first switch (first transistor M11) and the third switch (third transistor M13), the second switch (second transistor M12) and the second switch The first control signal for turning on the four switches (second transistor M14) is supplied, and the first detection signal and the second detection signal are obtained (see period T1 in FIG. 1C).

Thereby, the second terminal of the second switch (transistor M12), the gate of the first amplification transistor M10, and the first electrode of the first capacitor C1 are electrically connected to the first node A1. The potential is based on the first power supply potential.

Further, the potential of the second node A2 to which the second terminal of the fourth switch (transistor M14), the gate of the second amplification transistor M20, and the first electrode of the second capacitor C2 are electrically connected. Is based on the first power supply potential.

By setting the potential of the first node A1 and the potential of the second node A2 to a potential based on the first power supply potential, approximately equal current flows through the first signal line ML1 and the second signal line ML2. become. The sum of the current flowing through the first signal line ML1 and the current flowing through the second signal line ML2 is the magnitude of the constant current I supplied by the second wiring or the power supply (FIG. 1).

Note that the first detection signal based on the current flowing in the first signal line ML1 in the first step is the first reference signal ref1, and the second detection signal based on the current flowing in the second signal line ML2 is the first 2 reference signals ref2.

<< Second Step >>
In the second step, a selection signal for turning on the first switch (first transistor M11) and the third switch (third transistor M13), the second switch (second transistor M12) and the second switch The first control signal for turning off the four switches (fourth transistor M14) is supplied.

In addition, a pulsed second control signal is supplied, and the first detection signal and the second detection signal are acquired (see period T2 in FIG. 1C).

Thus, the pulsed second control signal changes the potential of the first node A1 through the first capacitor element C1, and changes the potential of the second node A2 through the second capacitor element C2. Change. For example, a rectangular wave can be used for the pulsed second control signal.

Note that the change in the potential of the first node A1 caused by the pulse-shaped second control signal includes a conductive film electrically connected to the first node A1, a thing close to the conductive film (for example, a finger), and the like. Depends on the capacitance.

In addition, the change in potential of the second node A2 caused by the pulse-shaped second control signal includes a conductive film electrically connected to the second node A2, a thing close to the conductive film (for example, a finger), and the like. Depends on the capacitance.

Thereby, the change in the potential of the first node A1 and the change in the potential of the second node A2 are caused by the first distance from the conductive film of the first detection unit 10 (1) to the one adjacent thereto and the second The difference is based on the difference in the second distance from the conductive film of the detection unit 10 (2) to the proximity of the detection unit 10 (2). As a result, the first detection unit 10 (1) and the second detection unit 10 (2) can supply the first detection signal and the second detection signal having different sizes.

《Third step》
In the third step, the first detection information supplied in the second step is compared with the first reference signal supplied in the first step to obtain first detection information.

In addition, the second detection information supplied in the second step is compared with the second reference signal supplied in the first step to obtain second detection information.

Specifically, the first detection unit 10 (1) supplies the first detection information converted from the first detection signal by subtracting the first reference information converted from the first reference signal. First detection information is acquired.

Specifically, the second detection unit 10 (2) supplies the second detection information converted from the second detection signal by subtracting the second reference information converted from the second reference signal. Second detection information is acquired.

<< Fourth Step >>
In the fourth step, the first detection information acquired in the third step and the second detection information can be compared, and detection information about the object close to the detection device 10 can be acquired.

In the driving method of the detection device 10 described in the present embodiment, the potential based on the first power supply potential is set to the first node A1 and the first detection unit adjacent to the first detection unit 10 (1). The first step of supplying the second detection signal to the second node A2 of the second detection unit 10 (2) and acquiring the reference signal, and the second control signal in the form of a pulse are supplied to the first capacitor C1 and the second capacitor The detection information is acquired by comparing the detection signal obtained in the second step and the reference signal obtained in the first step with the second step of supplying the detection signal to the second electrode of the element C2. And a third step.

Accordingly, the first detection signal supplied from the first detection unit based on the change in the potential of the first node and the change in the potential of the second node and the second detection unit adjacent to the first detection unit The detection information can be supplied by comparing the second detection signal supplied based on the change in the potential of the first node and the change in the potential of the second node. As a result, it is possible to provide a novel detection device driving method that is highly convenient or reliable.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 2)
In this embodiment, the structure of the detection device of one embodiment of the present invention will be described with reference to FIGS.

FIG. 6 illustrates a structure of the detection device of one embodiment of the present invention. 6A is a block diagram of the detection device 10 of one embodiment of the present invention, and FIG. 6B is a circuit diagram of a detection unit 10UC that can be used in the detection device 10.

<Configuration example of detection device>
The detection device 10 described in this embodiment includes a selection signal, a first control signal, a second control signal, a first power supply potential, a second power supply potential, a third power supply potential, and a fourth power supply potential. And a detection unit 10UC that can supply a first detection signal and a second detection signal (see FIG. 6A).

Further, a conversion circuit that is supplied with the first detection signal and the second detection signal and can supply the first detection information based on the first detection signal and the second detection information based on the second detection signal. 15 Note that the conversion circuit 15 supplies the first detection information to the output terminal OUT1, and supplies the second detection information to the output terminal OUT2.

The detection unit 10UC is based on the distance between the power source that can supply a constant current, the first detection unit 10 (1) that supplies the first detection signal based on the distance to the adjacent one, and the adjacent one. And a second detection unit 10 (2) for supplying a second detection signal. Note that the power supply supplies a constant current I (see FIG. 6B).

The power source is electrically connected to the wiring BIAS whose gate can supply the second power supply potential, the first electrode is electrically connected to the wiring capable of supplying the third power supply potential, The second electrode includes a transistor M0 that is electrically connected to a wiring that can be supplied with a constant current.

In the first detection unit 10 (1), the control terminal is electrically connected to the selection signal line G1 that can supply a selection signal, and the first terminal supplies the first detection signal. And a first switch electrically connected to the first signal line ML1. For example, the transistor M11 can be used for the first switch.

The control terminal is electrically connected to the first control line RES that can supply the first control signal, and the first terminal can supply the first power supply potential. A second switch electrically connected to VRES is provided. For example, the transistor M12 can be used for the second switch.

The gate is electrically connected to the second terminal of the second switch (transistor M12), the first electrode is electrically connected to the second terminal of the first switch (transistor M11), and the second The second electrode includes a first amplification transistor M10 that is electrically connected to a wiring that can supply a constant current supplied from a power source.

The control terminal is electrically connected to the second control line CS that can supply the second control signal, and the first terminal is electrically connected to the second terminal of the second switch. A fifth switch is provided. For example, the transistor M15 can be used for the fifth switch.

Also, the control terminal is electrically connected to the first control line RES that can supply the first control signal, and the first terminal is electrically connected to the wiring COM that can supply the fourth power supply potential. And a second terminal is provided with a sixth switch electrically connected to the second terminal of the fifth switch. For example, the transistor M16 can be used for the sixth switch.

The second detection unit 10 (2) includes a third switch whose control terminal is electrically connected to the selection signal line G1 and whose first terminal is electrically connected to the second signal line ML2. For example, the transistor M13 can be used for the third switch.

In addition, a fourth switch is provided in which the control terminal is electrically connected to the first control line RES and the first terminal is electrically connected to the first wiring VRES. For example, the transistor M14 can be used for the fourth switch.

The gate is electrically connected to the second terminal of the fourth switch (transistor M14), the first electrode is electrically connected to the second terminal of the third switch (transistor M13), and the second The second electrode includes a second amplification transistor M20 that is electrically connected to a wiring that can supply a constant current supplied from a power source.

The control terminal is electrically connected to the second control line CS that can supply the second control signal, and the first terminal is electrically connected to the second terminal of the second switch. A seventh switch is provided. For example, the transistor M17 can be used for the fifth switch.

Also, the control terminal is electrically connected to the first control line RES that can supply the first control signal, and the first terminal is electrically connected to the wiring COM that can supply the fourth power supply potential. And an eighth switch having a second terminal electrically connected to a second terminal of the seventh switch. For example, the transistor M18 can be used for the eighth switch.

The second detection unit 10 (2) of the detection device 10 described in the present embodiment is preferably within 5 mm, preferably within 2.5 mm, more preferably 1 mm from the first detection unit 10 (1). It is arranged within the range.

The first detection unit 10 (1) includes a third node A3 to which the second terminal of the fifth switch, the second terminal of the sixth switch, and the first conductive film are connected.

The second detection unit 10 (2) includes a second conductive film electrically insulated from the second terminal of the seventh switch, the second terminal of the eighth switch, and the first conductive film. Are connected to a fourth node A4.

The detection apparatus 10 described in this embodiment includes a detection unit 10UC that supplies a first detection signal and a second detection signal, and a first detection information that is supplied with the first detection signal and the second detection signal. And a conversion circuit 15 capable of supplying the second detection information.

Note that the first detection signal includes a change in the potential of the first node A1 to which the gate of the first amplification transistor M10 is electrically connected and a first change in which the gate of the second amplification transistor M20 is electrically connected. Based on the change in the potential of the second node A2, it is supplied by the first detection unit 10 (1).

The second detection signal includes the potential of the first node A1 adjacent to the first detection unit 10 (1) and electrically connected to the gate of the first amplification transistor M10, and the second amplification transistor. Based on a change in potential of the second node A2 to which the gate of M20 is electrically connected, the second detection unit 10 (2) supplies the same.

As a result, detection information supplied by a plurality of detection units arranged adjacent to each other can be compared to supply detection information. As a result, a novel detection device that is highly convenient or reliable can be provided.

Note that a predetermined potential can be set to the fourth power supply potential supplied by the wiring COM. For example, a potential different from the first power supply potential can be used for the fourth power supply potential.

<Driving method of detection device>
The detection device 10 exemplified in this embodiment can be driven using a method similar to that of the detection device 10 described in the first embodiment.

Specifically, the first control signal is supplied while the fifth switch (transistor M15) is in the non-conductive state, whereby the potential based on the first power supply potential is supplied to the first node A1, and the third switch A potential based on the fourth power supply potential is supplied to the node A3 (first step). Note that the capacitance changes when the first conductive film electrically connected to the third node A3 comes close.

Further, when the first control signal is supplied while the seventh switch (transistor M17) is non-conductive, the potential based on the first power supply potential is supplied to the second node A2, and the fourth node A4. Is supplied with a potential based on the fourth power supply potential. Note that when an object approaches the second conductive film electrically connected to the fourth node A4, a change in capacitance occurs.

Next, when the second switch (transistor M12) and the sixth switch (transistor M16) are in the non-conductive state and the second control signal for turning on the fifth switch (transistor M15) is supplied, the first switch The node A1 and the third node A3 are electrically connected (second step).

When the second switch (transistor M14) and the eighth switch (transistor M18) are in the non-conductive state and the second control signal for making the seventh switch (transistor M17) conductive is supplied, the second node A2 And the fourth node A4 are electrically connected.

Thereby, the change in capacitance caused by the proximity to the first conductive film changes the potential of the first node A1, and the change in capacitance caused by the proximity of the second conductive film results in: The potential of the second node A2 is changed. As a result, the first detection unit 10 (1) and the second detection unit 10 (2) supply the first detection signal and the second detection signal having different sizes.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 3)
In this embodiment, the structure of the input device of one embodiment of the present invention is described with reference to FIG.

FIG. 2 illustrates the structure of the input device of one embodiment of the present invention. 2A is a block diagram of the input device 100 of one embodiment of the present invention, and FIG. 2B is a block diagram illustrating a configuration of a detection unit 10U (i, j) that can be used in the input device 100. It is.

<Configuration Example of Input Device 1. >
The input device 100 described in this embodiment includes a plurality of detection units 10U (i, j) arranged in a matrix of m rows and n columns (see FIG. 2A).

Note that m, n, i, and j are natural numbers. Moreover, either m or n is 2 or more. i is m or less. j is n or less.

Also, a plurality of selection signal lines G1 (i) that are electrically connected to a plurality of detection units 10U (i, j) arranged in the row direction and can supply a selection signal, and arranged in the row direction. And a plurality of first control lines RES (i) that are electrically connected to the plurality of detection units 10U (i, j) and can supply a first control signal.

A plurality of first signal lines ML1 (j) electrically connected to the plurality of detection units 10U (i, j) arranged in the column direction and capable of supplying a first detection signal; A plurality of second signal lines ML2 (j) electrically connected to the plurality of detection units 10U (i, j) arranged in the column direction and capable of supplying a second detection signal. .

In addition, the second control line CS is electrically connected to the plurality of detection units 10U (i, j) and can supply the second control signal.

In addition, the first wiring VRES that is electrically connected to the plurality of detection units 10U (i, j) and can supply the first power supply potential, and the plurality of detection units 10U (i, j) are electrically connected. And a second wiring PW that can supply a constant current.

Further, the signal line ML1 (j) that can supply the first detection signal and the signal line ML2 (j) that can supply the second detection signal are electrically connected, and the detection information is transmitted to the terminal OUT ( conversion circuit 105 (j) that can be supplied to j).

The plurality of detection units 10U (i, j), the selection signal line G1 (i), the first control line RES (i), the first signal line ML1 (j), and the second signal line ML2 (j) , Second control line CS, first wiring, and base material 16 that supports second wiring PW.

The detection unit 10U (i, j) performs the second detection based on the distance from the first detection unit 10 (1) that supplies the first detection signal based on the distance from the proximity and the proximity. A second detector 10 (2) for supplying a signal is provided.

In the first detection unit 10 (1), the control terminal is electrically connected to the selection signal line G1 (i) that can supply a selection signal, and the first terminal supplies the first detection signal. And a first switch electrically connected to the first signal line ML1 (j). For example, the transistor M11 can be used for the first switch (see FIG. 1B).

The control terminal is electrically connected to the first control line RES (i) that can supply the first control signal, and the first terminal can supply the first power supply potential. A second switch electrically connected to the first wiring VRES; For example, the transistor M12 can be used for the second switch.

The gate is electrically connected to the second terminal of the second switch (transistor M12), the first electrode is electrically connected to the second terminal of the first switch (transistor M11), and the second The second electrode includes a first amplification transistor M10 that is electrically connected to a second wiring PW that can supply a constant current.

The first electrode is electrically connected to the gate of the first amplification transistor M10, and the second electrode is electrically connected to the second control line CS that can supply the second control signal. The first capacitor element C1 is provided.

The second detection unit 10 (2) has a third switch in which the control terminal is electrically connected to the selection signal line G1 and the first terminal is electrically connected to the second signal line ML2 (j). Is provided. For example, the transistor M13 can be used for the third switch.

In addition, a fourth switch is provided in which the control terminal is electrically connected to the first control line RES and the first terminal is electrically connected to the first wiring VRES. For example, the transistor M14 can be used for the fourth switch.

The gate is electrically connected to the second terminal of the fourth switch (transistor M14), the first electrode is electrically connected to the second terminal of the third switch, and the second electrode is A second amplification transistor M20 electrically connected to the second wiring PW is provided.

The second capacitor element includes a first electrode electrically connected to the gate of the second amplification transistor M20 and a second electrode electrically connected to the second control line CS.

The second detection unit 10 (2) of the detection unit 10U (i, j) used in the input device 100 described in the present embodiment is within 5 mm from the first detection unit 10 (1), preferably 2 Within 5 mm, more preferably within 1 mm.

The input device 100 described in the present embodiment includes a plurality of detection units 10U (i, j) arranged in a matrix, a first control line RES (i), a selection signal line G1 (i), 1st signal line ML1 (j), 2nd signal line ML1 (j), 2nd control line CS, 1st wiring VRES, 2nd wiring PW, and base material which supports these 16, a first detection signal supplied by the first detection unit 10 (1) provided in the detection unit 10U (i, j) and a second detection unit adjacent to the first detection unit 10 (1) A conversion circuit that is supplied with the second detection signal supplied by 10 (2) and can supply detection information.

As a result, detection information supplied by a plurality of detection units arranged adjacent to each other can be compared to supply detection information. As a result, a novel input device that is highly convenient or reliable can be provided.

Further, the input device 100 may include a drive circuit GD that supplies the selection signal and the first control signal to the detection unit 10U (i, j) arranged in the i-th row.

Further, the input device 100 supplies the first detection signal and the second detection signal to the detection unit 10U (i, j) arranged in the j-th column and can supply detection information to the conversion circuit 105 (j). The converter CONV may be provided.

Below, each element which comprises an input device is demonstrated. Note that these configurations cannot be clearly separated, and one configuration may serve as another configuration or may include a part of another configuration.

The input device 100 includes a plurality of detection units 10U (i, j), a selection signal line G1 (i), a first control line RES (i), a first signal line ML1 (j), Two signal lines ML2 (j), a second control line CS, a first wiring and a second wiring PW, a base 16 supporting these configurations, and a plurality of conversion circuits 204 (j ) Is different from the detection apparatus 10 described with reference to FIG. Here, different configurations will be described in detail, and the above description is used for the portions where the same configurations can be used.

In other words, the same configuration as the detection unit 10U described in Embodiment 1 can be used for the detection unit 10U (i, j), and the same configuration as the conversion circuit 15 can be used for the conversion circuit 105 (j). it can.

<Overall configuration>
A configuration similar to that of the detection unit 10U described in the first embodiment can be used for the detection unit 10U (i, j).

A structure similar to that of the conversion circuit 15 described in Embodiment 1 can be used for the conversion circuit 105 (j).

The same structure as the first control line, the second control line, the first wiring, the second wiring, the selection signal line, the first signal line, or the second signal line described in Embodiment 1 is selected. The signal line G1 (i), the first control line RES (i), the first signal line ML1 (j), the second signal line ML2 (j), the second control line CS, the first wiring, or the first wiring It can be used for the second wiring PW.

"Base material"
The base material 16 includes a plurality of detection units 10U (i, j), a selection signal line G1 (i), a first control line RES (i), a first signal line ML1 (j), and a second signal line ML2. (J) The base material 16 that supports the second control line CS, the first wiring, or the second wiring PW. Further, the conversion circuit 105 (j) may be supported.

In particular, when a flexible material is used for the base material 16, the input device 100 can be folded or unfolded.

The input device 100 in a folded state is excellent in portability. Thereby, the user of the input device 100 can operate the input device 100 while holding it with one hand to supply position information.

Moreover, the input device 100 in the expanded state is excellent in listability. Accordingly, the user of the input device 100 can operate while displaying various information on the input device 100 to supply position information.

An organic material, an inorganic material, a composite material of an organic material and an inorganic material, or the like can be used for the flexible substrate 16.

A material having a thickness of 5 μm to 2500 μm, preferably 5 μm to 680 μm, more preferably 5 μm to 170 μm, more preferably 5 μm to 45 μm, more preferably 5 μm to 45 μm, more preferably 8 μm to 25 μm. Can be used for the substrate 16.

Further, a material in which permeation of unintended impurities is suppressed can be suitably used for the base material 16. For example, a material having a water vapor permeability of 10 ⁻⁵ g / m ² · day or less, preferably 10 ⁻⁶ g / m ² · day or less can be suitably used.

Further, a material having approximately the same linear expansion coefficient can be suitably used for the base material 16. For example, a material having a linear expansion coefficient of 1 × 10 −3 / K or less, preferably 5 × 10 −5 / K or less, more preferably 1 × 10 −5 / K or less can be suitably used.

For example, an organic material such as a resin, a resin film, or a plastic film can be used for the substrate 16.

For example, an inorganic material such as a metal plate or a thin glass plate having a thickness of 10 μm to 50 μm can be used for the substrate 16.

For example, a composite material in which a metal plate, a thin glass plate, or an inorganic material film is bonded to a resin film or the like can be used for the substrate 16.

For example, a composite material in which a fibrous or particulate metal, glass, or inorganic material is dispersed in a resin film can be used for the substrate 16.

Specifically, a resin film or a resin plate such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or acrylic resin can be used.

Specifically, alkali-free glass, soda-lime glass, potash glass, crystal glass, or the like can be used.

Specifically, a metal oxide film, a metal nitride film, a metal oxynitride film, or the like can be used. For example, silicon oxide, silicon nitride, silicon oxynitride, an alumina film, or the like can be applied.

Specifically, SUS or aluminum can be used.

<Configuration Example 2 of Input Device>>
Another structure of the input device of one embodiment of the present invention is described with reference to FIGS.

FIG. 5 is a diagram illustrating a configuration of a modified example of the detection unit 10UB that can be used in the input device of one embodiment of the present invention.

The detection unit 10UB can be used instead of the detection unit 10U. When the detection unit 10UB is used, the wiring BIAS and the wiring VPI are used instead of the second wiring PW.

The wiring BIAS can supply the second power supply potential, and the wiring VPI can supply the third power supply potential.

The base material 16 supports the wiring BIAS and the wiring VPI instead of the second wiring PW.

<Configuration Example 3 of Input Device>>
Another structure of the input device of one embodiment of the present invention is described with reference to FIGS.

FIG. 6 is a diagram illustrating a configuration of a modified example of the detection unit 10UC that can be used in the input device of one embodiment of the present invention.

The detection unit 10UC can be used instead of the detection unit 10U. When the detection unit 10UC is used, the wiring BIAS and the wiring VPI are used instead of the second wiring PW. Further, the wiring COM is used.

The wiring BIAS can supply the second power supply potential, and the wiring VPI can supply the third power supply potential. Further, the wiring COM can supply the fourth power supply potential.

The base material 16 supports the wiring BIAS, the wiring VPI, and the wiring COM in place of the second wiring PW.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 4)
In this embodiment, a structure of an input / output device using the input device of one embodiment of the present invention is described with reference to FIGS.

FIG. 3 is a projection view illustrating a structure of the input / output device 500 of one embodiment of the present invention. For convenience of explanation, a part of the detection unit 10U (i, j) and a part of the pixel 502 are enlarged.

4A is a cross-sectional view illustrating a cross-sectional structure taken along line Z1-Z2 of the input / output device 500 of one embodiment of the present invention illustrated in FIG. 3, and FIG. 4B and FIG. It is sectional drawing which shows the modification of the structure which can substitute a part of structure shown to A).

<Configuration example of input / output device>
An input / output device 500 described in this embodiment includes a display portion 501 and an input device 100 that overlaps the display portion 501 (see FIG. 3).

The input device 100 includes a plurality of detection units 10U (i, j) arranged in a matrix.

In addition, a selection signal line G1 (i) to which a plurality of detection units 10U (i, j) arranged in the row direction (indicated by an arrow R in the drawing) are electrically connected, and a first control line RES ( i).

In addition, a first signal line ML1 (j) to which a plurality of detection units 10U (i, j) arranged in the column direction (indicated by an arrow C in the figure) are electrically connected, and a second signal line ML2 (j).

In addition, a second control line CS that can supply a second control signal, a first wiring VRES that can supply a first potential, and a second wiring PW that can supply a constant current are provided. Prepare.

The detection unit 10U (i, j) includes a first detection unit 10 (1) and a second detection unit 10 (2) adjacent to the first detection unit 10 (1).

The first detection unit 10 (1) can supply the first detection signal to the first signal line ML1. The second detection unit 10 (2) can supply the second detection signal to the second signal line ML2.

A transistor or / and a sensing element or the like can be used for the first sensing unit 10 (1). Further, a transistor or / and a detection element or the like can be used for the second detection unit. For example, a conductive film and a capacitor electrically connected to the conductive film can be used for the detection element. Specifically, the transistor M12 and the first capacitor C1 electrically connected to the second electrode of the transistor M12 can be used (see FIG. 4).

The first capacitor element C1 includes an insulating layer 13, a first electrode 11 and a second electrode 12 that sandwich the insulating layer 13.

The detection unit 10U (i, j) has a plurality of window portions 14 arranged in a matrix (see FIG. 3). The window portion 14 may transmit visible light, and a light-shielding layer BM may be disposed between the plurality of window portions 14.

A colored layer is provided at a position overlapping the window portion 14. The colored layer transmits light of a predetermined color. Note that the colored layer can be referred to as a color filter. For example, a colored layer CFB that transmits blue light, a colored layer CFG that transmits green light, or a colored layer CFR that transmits red light can be used. Alternatively, a colored layer that transmits yellow light or a layer that transmits white light may be used.

The display portion 501 includes a plurality of pixels 502 arranged in a matrix. The pixel 502 is disposed so as to overlap the window portion 14 of the input device 100.

The pixels 502 may be arranged with a higher definition than the detection unit 10U (i, j).

The input / output device 500 described in this embodiment includes an input device 100 including a plurality of detection units 10U (i, j) including a window portion 14 that transmits visible light, and a plurality of pixels 502 that overlap the window portion 14. A display portion 501, and includes a coloring layer between the window portion 14 and the pixel 502. Each detection unit is provided with a switch that can reduce electrical interference to other detection units. Note that a transistor or the like can be used for the switch.

Thereby, the detection information which each detection unit detects can be supplied with the positional information on a detection unit. In addition, detection information can be supplied in association with position information of a pixel displaying an image. In addition, by making the detection unit that does not supply detection information and the signal line non-conductive, electrical interference to the detection unit that supplies the detection signal can be reduced. As a result, a novel input / output device that is highly convenient or reliable can be provided.

For example, the input device 100 of the input / output device 500 can detect the detection information and supply it together with the position information. Specifically, the user of the input / output device 500 can perform various gestures (tap, drag, swipe, pinch-in, etc.) using a finger or the like touching the input device 100 as a pointer.

The input device 100 can detect a finger or the like approaching or contacting the input device 100 and supply detection information including the detected position or locus.

The arithmetic device determines whether or not the supplied detection information satisfies a predetermined condition based on a program or the like, and executes a command associated with the predetermined gesture.

Thereby, the user of the input device 100 can supply a predetermined gesture using a finger or the like, and cause the arithmetic device to execute a command associated with the predetermined gesture.

For example, the input device 100 selects one detection unit from the first detection units 10 (1) of the plurality of detection units that can supply detection information to one first signal line ML1. The other detection units excluding the detection unit and the one first signal line ML1 can be made non-conductive. Thereby, the electrical interference of the 1st detection part 10 (1) to the selected detection unit which the 1st detection part 10 (1) of the other detection unit which is not selected brings about can be reduced. .

Specifically, electrical interference to the detection element of the selected detection unit caused by the detection element of the first detection unit 10 (1) of the detection unit that is not selected can be reduced. In the above description, the first detection unit 10 (1) can be read as the second detection unit 10 (2), and the first signal line ML1 can be read as the second signal line ML2.

For example, when a conductive film in which a capacitor element and one electrode of the capacitor element are electrically connected is used as a detection element, the conductivity of the selected detection unit is caused by the potential of the conductive film of an unselected detection unit. Interference with the membrane potential can be reduced. Specifically, it can contribute to noise reduction.

Thereby, the input device 100 can drive the detection unit and supply detection information without depending on the size thereof. For example, the input device 100 having various sizes from a size that can be used for a handheld type to a size that can be used for an electronic blackboard can be provided.

In addition, the input device 100 can be in a folded state and an unfolded state, and the detection unit that is not selected in the folded state and the unfolded state provides an electrical connection to the selected sensing unit. Even when the interference is different, the detection unit can be driven to supply the detection information without depending on the state of the input device 100.

Further, the display information 501 can be supplied to the display unit 501 of the input / output device 500. For example, the arithmetic unit can supply the display information V.

In addition to the above configuration, the input / output device 500 may include the following configuration.

The input device 100 of the input / output device 500 may include a drive circuit GD or a converter CONV. Moreover, you may electrically connect with the flexible substrate FPC1.

The display portion 501 of the input / output device 500 may include a scan line driver circuit 503g, a wiring 511, or a terminal 519. Moreover, you may electrically connect with flexible printed circuit board FPC2.

Further, a protective layer 17 that protects the input / output device 500 by preventing generation of scratches may be provided. For example, a ceramic coat layer or a hard coat layer can be used for the protective layer 17. Specifically, a layer containing aluminum oxide or a UV curable resin can be used. Further, an antireflection layer 567p that weakens the intensity of external light reflected by the input / output device 500 can be used. Specifically, a circularly polarizing plate can be used.

Hereinafter, individual elements constituting the input / output device 500 will be described. Note that these configurations cannot be clearly separated, and one configuration may serve as another configuration or may include a part of another configuration.

For example, the input device 100 including a colored layer at a position overlapping the plurality of window portions 14 is not only the input device 100 but also a color filter.

For example, the input / output device 500 in which the input device 100 is superimposed on the display unit 501 is not only the input device 100 but also the display unit 501. Note that the input / output device 500 in which the input device 100 is overlaid on the display portion 501 is also referred to as a touch panel.

<Overall configuration>
The input / output device 500 described in this embodiment includes the input device 100 or the display portion 501.

Note that an example of a method for manufacturing the input / output device 500 will be described in detail in Embodiments 6 to 8.

<Input device>
The input device 100 includes a detection unit 10U, a selection signal line G1, a first signal line ML1 (j), a second signal line ML2 (j), a window portion 14, and a first base material 16.

Note that the input device 100 may be formed using a method of forming a film for forming the input device 100 on the substrate 16 and processing the film.

Alternatively, the input device 100 may be formed using a method in which a part of the input device 100 is formed on another base material and the part is transferred to the base material 16.

<Detection unit>
The detection unit 10U (i, j) supplies the detection information by detecting the proximity or contact. For example, it detects capacitance, illuminance, magnetic force, radio wave, pressure, etc., and supplies information based on the detected physical quantity. Specifically, a capacitive element, a photoelectric conversion element, a magnetic sensing element, a piezoelectric element, a resonator, or the like can be used as the sensing element.

The detection unit 10U (i, j) detects, for example, a change in electrostatic capacitance between the proximity unit and the contact unit. Specifically, a conductive film and a detection circuit electrically connected to the conductive film may be used.

In the atmosphere, when an object having a dielectric constant greater than that of the atmosphere, such as a finger, approaches the conductive film, the capacitance between the finger and the conductive film changes. This change in capacitance can be detected and a detection signal can be supplied. Specifically, a detection circuit including a conductive film and a capacitor in which one electrode is connected to the conductive film can be used. As the capacitance changes, charge distribution is caused and the voltage at the electrodes at both ends of the capacitive element changes. This change in voltage can be used as a detection signal. For example, the voltage between the electrodes of the first capacitor element C1 changes due to the proximity of a conductive film electrically connected to one electrode.

For example, the configuration described in the second embodiment can be used for the detection unit 10U (i, j). The detection unit 10U (i, j) includes a first detection unit 10 (1) and a second detection unit 10 (2).

The first detection unit 10 (1) supplies detection information to the first signal line ML1 (j), and the second detection unit 10 (2) supplies detection information to the second signal line ML2 (j). To do.

《Switch, transistor》
The detection unit 10U (i, j) includes a switch that can be turned on or off based on a control signal. For example, a transistor can be used for the switch.

A transistor that amplifies the detection signal can be used in the detection unit 10U (i, j).

Transistors that can be manufactured in the same process can be used for transistors and switches that amplify a detection signal. Thereby, the input device 100 with a simplified manufacturing process can be provided.

The transistor includes a semiconductor layer. For example, a Group 4 element, a compound semiconductor, or an oxide semiconductor can be used for the semiconductor layer. Specifically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used for the semiconductor layer.

Semiconductor layers having various crystallinities can be used for the transistor. For example, a semiconductor layer containing non-crystal, a semiconductor layer containing microcrystal, a semiconductor layer containing polycrystal, a semiconductor layer containing single crystal, or the like can be used. Specifically, amorphous silicon, polysilicon crystallized by a process such as laser annealing, or a semiconductor layer formed using SOI (Silicon On Insulator) technology can be used.

An oxide semiconductor used for the semiconductor layer includes, for example, at least indium (In), zinc (Zn), and M (metal such as Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf). It is preferable to include a film represented by -Zn oxide. Or it is preferable that both In and Zn are included.

Examples of the stabilizer include gallium (Ga), tin (Sn), hafnium (Hf), aluminum (Al), and zirconium (Zr). Other stabilizers include lanthanoids such as lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb). ), Dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), and the like.

Examples of the oxide semiconductor that forms the oxide semiconductor film include an In—Ga—Zn-based oxide, an In—Al—Zn-based oxide, an In—Sn—Zn-based oxide, an In—Hf—Zn-based oxide, In-La-Zn-based oxide, In-Ce-Zn-based oxide, In-Pr-Zn-based oxide, In-Nd-Zn-based oxide, In-Sm-Zn-based oxide, In-Eu-Zn Oxide, In-Gd-Zn oxide, In-Tb-Zn oxide, In-Dy-Zn oxide, In-Ho-Zn oxide, In-Er-Zn oxide, In -Tm-Zn-based oxide, In-Yb-Zn-based oxide, In-Lu-Zn-based oxide, In-Sn-Ga-Zn-based oxide, In-Hf-Ga-Zn-based oxide, In- Al-Ga-Zn-based oxide, In-Sn-Al-Zn-based oxide, In-Sn-Hf- n based oxide, In-Hf-Al-Zn-based oxide can be used an In-Ga-based oxide.

Note that here, an In—Ga—Zn-based oxide means an oxide containing In, Ga, and Zn as its main components, and there is no limitation on the ratio of In, Ga, and Zn. Moreover, metal elements other than In, Ga, and Zn may be contained.

Note that the structure of a transistor in which an oxide semiconductor is used for a semiconductor layer is described in detail in Embodiment 5.

"wiring"
The input device 100 includes a selection signal line G1 (i), a first control line RES (i), a first signal line ML1 (j), a second signal line ML2 (j), a second control line CS, The first wiring VRES or the second wiring PW is provided.

A conductive material can be used for these wirings.

For example, an inorganic conductive material, an organic conductive material, a metal, a conductive ceramic, or the like can be used for the wiring.

Specifically, a metal element selected from aluminum, gold, platinum, silver, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, yttrium, zirconium, palladium, or manganese, and an alloy containing the above metal elements Alternatively, an alloy or the like in which the above metal elements are combined can be used for the wiring or the like. In particular, it is preferable that one or more elements selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten are included. In particular, an alloy of copper and manganese is suitable for fine processing using a wet etching method.

Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a tantalum nitride film or A two-layer structure in which a tungsten film is stacked over a tungsten nitride film, a titanium film, and a three-layer structure in which an aluminum film is stacked over the titanium film and a titanium film is further formed thereon can be used.

Specifically, a stacked structure in which a film of an element selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium, or a combination of alloy films or nitride films can be used on an aluminum film can be used. .

Alternatively, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used.

Alternatively, graphene or graphite can be used. The film containing graphene can be formed, for example, by reducing a film containing graphene oxide formed in a film shape. Examples of the reduction method include a method of applying heat and a method of using a reducing agent.

Alternatively, a conductive polymer can be used.

<Drive circuit>
For example, the drive circuit GD can supply a selection signal at a predetermined timing. Specifically, the selection signal is supplied in a predetermined order for each selection signal line G1. Various circuits can be used for the drive circuit GD. For example, a combinational circuit such as a shift register or a flip-flop circuit can be used. For example, the drive circuit GD may supply the selection signal so that the input device 100 operates based on a predetermined operation of the display unit 501. Specifically, the selection signal may be supplied so that the input device 100 operates during the blanking period of the display unit 501. Thereby, the malfunction which the input device 100 detects the noise accompanying operation | movement of the display part 501 can be reduced.

The converter CONV can use various circuits for the converter CONV that can convert the detection signal supplied from the detection unit 10U (i, j) into detection information and supply the detection information to the flexible printed circuit board FPC1. 3 (B)). For example, a circuit that can form a source follower circuit or a current mirror circuit by being electrically connected to a detection circuit provided in the detection unit can be used for the conversion circuit CONV. Moreover, you may provide the analog digital conversion circuit which converts a detection signal into a digital signal.

Note that the converter CONV may include a plurality of conversion circuits 105 (j). The conversion circuit 105 (j) may convert and supply a signal supplied from the first signal line ML1 (j) and the second signal line ML2 (j) to a voltage.

"Base material"
The base material 16 will not be specifically limited if it is provided with the heat resistance of the grade which can endure a manufacturing process, and the thickness and magnitude | size applicable to a manufacturing apparatus. In particular, when a flexible material is used for the base material 16, the input device 100 can be folded or unfolded. Note that a light-transmitting material is used for the base material 16 in the case where the input device 100 is disposed on the display side of the display unit 501.

An organic material, an inorganic material, or a composite material such as an organic material and an inorganic material can be used for the substrate 16.

For example, an inorganic material such as glass, ceramics, or metal can be used for the substrate 16.

Specifically, alkali-free glass, soda-lime glass, potash glass, crystal glass, or the like can be used for the substrate 16.

Specifically, a metal oxide film, a metal nitride film, a metal oxynitride film, or the like can be used for the substrate 16. For example, silicon oxide, silicon nitride, silicon oxynitride, an alumina film, or the like can be used for the base material 16.

For example, an organic material such as resin, resin film, or plastic can be used for the substrate 16.

Specifically, a resin film or a resin plate such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or acrylic resin can be used for the substrate 16.

For example, a composite material in which a film such as a thin glass plate or an inorganic material is bonded to a resin film or the like can be used for the base material 16.

For example, a composite material in which a fibrous or particulate metal, glass, inorganic material, or the like is dispersed in a resin film can be used for the substrate 16.

For example, a composite material in which a fibrous or particulate resin or an organic material is dispersed in an inorganic material can be used for the substrate 16.

A single-layer material or a laminated material in which a plurality of layers are laminated can be used for the substrate 16. For example, a laminated material in which a base material and an insulating layer that prevents diffusion of impurities contained in the base material are laminated can be used for the base material 16.

Specifically, a laminated material in which one or a plurality of films selected from glass, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like that prevents diffusion of impurities contained in the glass is laminated on the substrate 16 is used. Applicable.

Alternatively, a stacked material in which a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like that prevents diffusion of resin and impurities that pass through the resin can be applied to the substrate 16.

Specifically, a laminate of a flexible substrate 16b, a barrier film 16a that prevents unintended diffusion of impurities, and a resin layer 16c that bonds the substrate 16b and the barrier film 16a can be used (FIG. 6 ( A)).

《Flexible printed circuit board》
The flexible printed circuit board FPC1 supplies a timing signal, a power supply potential, and the like, and is supplied with a detection signal.

<Display section>
The display unit 501 includes a plurality of pixels 502 arranged in a matrix (see FIG. 3).

Note that the display portion 501 may be formed using a method for forming a film for forming the display portion 501 on the base material 510 and processing the film.

Alternatively, the display portion 501 may be formed using a method in which part of the display portion 501 is formed on another base material and the part is transferred to the base material 510.

<Pixel>
The pixel 502 includes a sub-pixel 502B, a sub-pixel 502G, and a sub-pixel 502R, and each sub-pixel includes a display element and a pixel circuit that drives the display element.

<Pixel circuit>
An active matrix method in which an active element is included in a pixel or a passive matrix method in which an active element is not included in a pixel can be used for the display portion.

In the active matrix system, not only transistors but also various active elements (active elements and nonlinear elements) can be used as active elements (active elements and nonlinear elements). For example, MIM (Metal Insulator Metal) or TFD (Thin Film Diode) can be used. Since these elements have few manufacturing steps, manufacturing cost can be reduced or yield can be improved. Alternatively, since these elements have small element sizes, the aperture ratio can be improved, and power consumption and luminance can be increased.

As a method other than the active matrix method, a passive matrix type that does not use an active element (an active element or a non-linear element) can be used. Since no active element (active element or non-linear element) is used, the number of manufacturing steps is small, so that manufacturing costs can be reduced or yield can be improved. Alternatively, since an active element (an active element or a non-linear element) is not used, an aperture ratio can be improved, power consumption can be reduced, or luminance can be increased.

The pixel circuit includes, for example, a transistor 502t.

The display portion 501 includes an insulating film 521 that covers the transistor 502t. The insulating film 521 can be used as a layer for planarizing unevenness caused by the pixel circuit. Alternatively, the insulating film 521 can be a stacked film including a layer that can suppress diffusion of impurities. Accordingly, a decrease in reliability of the transistor 502t and the like due to unexpected impurity diffusion can be suppressed.

<Display element>
Various display elements can be used for the display portion 501. For example, a display element (also referred to as electronic ink) that performs display by an electrophoresis method, an electronic powder fluid method, an electrowetting method, or the like, a shutter-type MEMS display device, a light interference-type MEMS display device, a liquid crystal device, or the like Can do.

In addition, a display element that can be used for a transmissive liquid crystal display, a transflective liquid crystal display, a reflective liquid crystal display, a direct-view liquid crystal display, or the like can be used.

For example, you may apply the organic electroluminescent element from which the color of the emitted light differs for every subpixel.

For example, an organic electroluminescence element that emits white light can be applied to the display element.

The light-emitting element 550R includes a lower electrode, an upper electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode.

The subpixel 502R includes a light emitting module 580R. The sub-pixel 502R includes a pixel circuit including a light-emitting element 550R and a transistor 502t that can supply power to the light-emitting element 550R. The light emitting module 580R includes a light emitting element 550R and an optical element (for example, a colored layer CFR).

Note that a microresonator structure can be provided in the light emitting module 580R so that light of a specific wavelength can be extracted efficiently. Specifically, a layer containing a light-emitting organic compound may be disposed between a film that reflects visible light and a semi-reflective / semi-transmissive film that is arranged so that specific light can be efficiently extracted.

The light emitting module 580R has a colored layer CFR in the direction of extracting light. The colored layer may be any layer that transmits light having a specific wavelength. For example, a layer that selectively transmits light such as red, green, or blue can be used. Note that another sub-pixel may be arranged so as to overlap with a window portion where the colored layer is not provided, and light emitted from the light-emitting element may be emitted without passing through the colored layer.

The colored layer CFR is in a position overlapping the light emitting element 550R. Thus, part of the light emitted from the light emitting element 550R passes through the colored layer CFR and is emitted to the outside of the light emitting module 580R in the direction of the arrow shown in the drawing.

There is a light-shielding layer BM so as to surround the colored layer (for example, the colored layer CFR).

Note that in the case where the sealant 560 is provided on the light extraction side, the sealant 560 is in contact with the light-emitting element 550R and the coloring layer CFR.

The lower electrode is disposed on the insulating film 521. A partition wall 528 provided with an opening overlapping the lower electrode is provided. Note that a part of the partition wall 528 overlaps with an end portion of the lower electrode.

A light emitting element (for example, light emitting element 550R) is configured by sandwiching a layer containing a light emitting organic compound between the lower electrode and the upper electrode. The pixel circuit supplies power to the light emitting element.

In addition, a spacer for controlling the distance between the base material 16 and the base material 510 is provided over the partition wall 528.

Note that in the case of realizing a transflective liquid crystal display or a reflective liquid crystal display, part or all of the pixel electrode may have a function as a reflective electrode. For example, part or all of the pixel electrode may have aluminum, silver, or the like.

Further, a memory circuit such as an SRAM can be provided under the reflective electrode. Thereby, power consumption can be further reduced. In addition, a structure suitable for a display element to be applied can be selected from various pixel circuits and used.

"Base material"
A flexible material can be used for the substrate 510. For example, a material that can be used for the substrate 16 can be applied to the substrate 510.

Note that in the case where the substrate 510 does not require translucency, for example, a material that does not have translucency, specifically, SUS or aluminum can be used.

For example, the base material 510 is a laminate in which a base material 510b having flexibility, a barrier film 510a that prevents unintended diffusion of impurities, and a resin layer 510c that bonds the base material 510b and the barrier film 510a are laminated. It can be preferably used (see FIG. 4A).

<Encapsulant>
The sealing material 560 bonds the base material 16 and the base material 510 together. The encapsulant 560 has a higher refractive index than air. In the case where light is extracted to the sealing material 560 side, the sealing material 560 also serves as an optical bonding layer.

Note that the pixel circuit and the light-emitting element (for example, the light-emitting element 550 </ b> R) are between the base material 510 and the base material 16.

<< Configuration of scanning line driving circuit >>
The scan line driver circuit 503g (1) supplies a selection signal. For example, the transistor 503t or the capacitor 503c is included. Note that a transistor which can be formed over the same substrate in the same process as the pixel circuit can be used for the driver circuit.

<< Scanning lines, signal lines, power supply lines, etc. >>
The display portion 501 includes wiring such as scanning lines, signal lines, and power supply lines. Various conductive films can be used. For example, the same material as the conductive film that can be used for the input device 100 can be used.

The display portion 501 includes a wiring 511 that can supply a signal, and a terminal 519 is provided in the wiring 511. Note that a flexible printed circuit board FPC2 that can supply signals such as an image signal and a synchronization signal is electrically connected to the terminal 519.

Note that a printed wiring board (PWB) may be attached to the flexible printed circuit board FPC2.

<Other configuration>
The display portion 501 includes an antireflection layer 567p at a position overlapping the pixel. As the antireflection layer 567p, for example, a circularly polarizing plate can be used.

<Modified example of input / output device>
Various transistors can be applied to the input device 100 and / or the display unit 501.

A structure in the case where a bottom-gate transistor is applied to the input device 100 is illustrated in FIG.

A structure in the case of using a bottom-gate transistor for the display portion 501 is illustrated in FIGS.

For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like can be applied to the transistor 502t and the transistor 503t illustrated in FIG.

For example, a semiconductor layer containing polycrystalline silicon crystallized by a process such as laser annealing can be applied to the transistor 502t and the transistor 503t illustrated in FIG.

A structure in the case where a top-gate transistor is applied to the display portion 501 is illustrated in FIG.

For example, a semiconductor layer including a single crystal silicon film or the like transferred from a polycrystalline silicon or a single crystal silicon substrate can be applied to the transistor 502t and the transistor 503t illustrated in FIG.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 5)
In this embodiment, a structure of a transistor that can be used for the detection circuit or the like of one embodiment of the present invention will be described with reference to FIGS.

7A to 7C are a top view and cross-sectional views of the transistor 151. FIG. 7A is a top view of the transistor 151, FIG. 7B corresponds to a cross-sectional view taken along the dashed-dotted line A-B in FIG. 7A, and FIG. This corresponds to a cross-sectional view of a cross-sectional surface taken along dashed-dotted line CD in FIG. Note that in FIG. 7A, some components are not illustrated for clarity.

Note that in this embodiment, the first electrode indicates one of a source electrode and a drain electrode of a transistor, and the second electrode indicates the other.

The transistor 151 includes a gate electrode 104a provided over the substrate 102, a first insulating film 108 including an insulating film 106 and an insulating film 107 formed over the substrate 102 and the gate electrode 104a, and a first insulating film 108. The oxide semiconductor film 110 overlaps with the gate electrode 104a, and the first electrode 112a and the second electrode 112b in contact with the oxide semiconductor film 110 are provided.

In addition, the second insulating film 120 including the insulating films 114, 116, and 118 over the first insulating film 108, the oxide semiconductor film 110, the first electrode 112 a, and the second electrode 112 b, and the second insulating film A gate electrode 122 c formed over the film 120.

The gate electrode 122c is connected to the gate electrode 104a in the opening 142e provided in the first insulating film 108 and the second insulating film 120. In addition, a conductive film 122a functioning as a pixel electrode is formed over the insulating film 118, and the conductive film 122a is connected to the second electrode 112b in an opening 142a provided in the second insulating film 120.

Note that the first insulating film 108 functions as a first gate insulating film of the transistor 151, and the second insulating film 120 functions as a second gate insulating film of the transistor 151. The conductive film 122a functions as a pixel electrode.

In the transistor 151 described in this embodiment, the oxide semiconductor film 110 is provided between the gate electrode 104a and the gate electrode 122c with the first insulating film 108 and the second insulating film 120 interposed therebetween in the channel width direction. ing. 7A, the gate electrode 104a overlaps with the side surface of the oxide semiconductor film 110 with the first insulating film 108 interposed therebetween in the top surface shape.

The first insulating film 108 and the second insulating film 120 have a plurality of openings. Typically, as illustrated in FIG. 7B, an opening 142a from which part of the second electrode 112b is exposed is provided. Further, as shown in FIG. 7C, an opening 142e is provided.

In the opening 142a, the second electrode 112b and the conductive film 122a are connected to each other.

In addition, the gate electrode 104a and the gate electrode 122c are connected in the opening 142e.

When the gate electrode 104a and the gate electrode 122c are included and the gate electrode 104a and the gate electrode 122c have the same potential, carriers flow in a wide range of the oxide semiconductor film 110. Thereby, the amount of carriers moving through the transistor 151 increases.

As a result, the on-state current of the transistor 151 is increased, and the field effect mobility is increased. Typically, the field effect mobility is 10 cm ² / V · s or more, further 20 cm ² / V · s or more. Note that the field-effect mobility here is not an approximate value of mobility as a physical property value of the oxide semiconductor film but an index of current driving force in the saturation region of the transistor and is an apparent field-effect mobility. .

Note that the channel length (also referred to as L length) of the transistor is greater than or equal to 0.5 μm and less than or equal to 6.5 μm, preferably greater than 1 μm and less than 6 μm, more preferably greater than 1 μm and less than 4 μm, more preferably greater than 1 μm and less than 3.5 μm. More preferably, the field effect mobility is remarkably increased by setting it to be larger than 1 μm and 2.5 μm or less. In addition, when the channel length is as small as 0.5 μm or more and 6.5 μm or less, the channel width can be reduced.

In addition, since each of the gate electrode 104a and the gate electrode 122c has a function of shielding an electric field from the outside, electric charges such as charged particles provided between the substrate 102 and the gate electrode 104a and on the gate electrode 122c can be obtained. The oxide semiconductor film 110 is not affected. As a result, deterioration of the stress test (for example, a negative bias potential applied to the gate electrode -GBT (Gate Bias-Temperature) stress test) is suppressed, and fluctuations in the rising current of the on-current at different drain voltages are suppressed. be able to.

Note that the BT stress test is a kind of accelerated test, and a change in characteristics (that is, a secular change) of a transistor caused by long-term use can be evaluated in a short time. In particular, the amount of change in the threshold voltage of the transistor before and after the BT stress test is an important index for examining reliability. Before and after the BT stress test, the smaller the variation amount of the threshold voltage, the higher the reliability of the transistor.

Hereinafter, individual elements included in the substrate 102 and the transistor 151 will be described.

<< Substrate 102 >>
As the substrate 102, a glass material such as aluminosilicate glass, aluminoborosilicate glass, or barium borosilicate glass is used. For mass production, it is preferable to use a mother glass of the eighth generation (2160 mm × 2460 mm), the ninth generation (2400 mm × 2800 mm, or 2450 mm × 3050 mm), the tenth generation (2950 mm × 3400 mm), or the like. Since the mother glass has a high processing temperature and contracts significantly when the processing time is long, when mass production is performed using the mother glass, the heat treatment in the manufacturing process is preferably 600 ° C. or less, more preferably 450 ° C. or less. Further, it is desirable that the temperature is 350 ° C. or lower.

<< Gate electrode 104a >>
As a material used for the gate electrode 104a, a metal element selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, tungsten, an alloy including the above-described metal element, an alloy combining the above-described metal elements, or the like Can be used. The material used for the gate electrode 104a may have a single-layer structure or a stacked structure including two or more layers. For example, a two-layer structure in which a titanium film is stacked on an aluminum film, a two-layer structure in which a titanium film is stacked on a titanium nitride film, a two-layer structure in which a tungsten film is stacked on a titanium nitride film, a tantalum nitride film, or a tungsten nitride film There are a two-layer structure in which a tungsten film is stacked thereon, a titanium film, and a three-layer structure in which an aluminum film is stacked on the titanium film and a titanium film is further formed thereon. Alternatively, aluminum may be a film of an element selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium, or an alloy film or a nitride film in combination of a plurality of elements. As a material used for the gate electrode 104a, for example, a sputtering method can be used.

<< First Insulating Film 108 >>
The first insulating film 108 exemplifies a two-layer structure of the insulating film 106 and the insulating film 107. Note that the structure of the first insulating film 108 is not limited thereto, and may be, for example, a single-layer structure or a stacked structure including three or more layers.

As the insulating film 106, for example, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, or the like may be used, and the insulating film 106 is provided as a stacked layer or a single layer using a PE-CVD apparatus. In the case where the insulating film 106 has a stacked structure, the first silicon nitride film is a silicon nitride film with few defects, and the second silicon nitride film is formed over the first silicon nitride film with a hydrogen release amount and ammonia. It is preferable to provide a silicon nitride film with a small emission amount. As a result, hydrogen and nitrogen contained in the insulating film 106 can be prevented from moving or diffusing into the oxide semiconductor film 110 formed later.

As the insulating film 107, a silicon oxide film, a silicon oxynitride film, or the like may be used, and the insulating film 107 is provided as a stacked layer or a single layer using a PE-CVD apparatus.

The first insulating film 108 has a stacked structure in which, for example, a silicon nitride film having a thickness of 400 nm is formed as the insulating film 106, and then a silicon oxynitride film having a thickness of 50 nm is formed as the insulating film 107. Can be used. The silicon nitride film and the silicon oxynitride film are preferably formed continuously in a vacuum because contamination of impurities is suppressed. Note that the first insulating film 108 in a position overlapping with the gate electrode 104 a functions as a gate insulating film of the transistor 151. In addition, silicon nitride oxide is an insulating material in which the nitrogen content is higher than the oxygen content, and silicon oxynitride is an insulating material in which the oxygen content is higher than the nitrogen content.

<< Oxide Semiconductor Film 110 >>
The oxide semiconductor film 110 is preferably an oxide semiconductor. As the oxide semiconductor, at least indium (In), zinc (Zn), and M (Al, Ga, Ge, Y, Zr, Sn, La, Ce) are used. Or a film represented by an In-M-Zn oxide containing a metal such as Hf). Or it is preferable that both In and Zn are included. In addition, in order to reduce variation in electrical characteristics of the transistor including the oxide semiconductor, a stabilizer is preferably included together with the transistor.

Examples of the stabilizer include gallium (Ga), tin (Sn), hafnium (Hf), aluminum (Al), and zirconium (Zr). Other stabilizers include lanthanoids such as lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb). ), Dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), and the like.

Examples of the oxide semiconductor included in the oxide semiconductor film 110 include an In—Ga—Zn-based oxide, an In—Al—Zn-based oxide, an In—Sn—Zn-based oxide, and an In—Hf—Zn-based oxide. In-La-Zn-based oxide, In-Ce-Zn-based oxide, In-Pr-Zn-based oxide, In-Nd-Zn-based oxide, In-Sm-Zn-based oxide, In-Eu- Zn-based oxide, In-Gd-Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Zn-based oxide, In-Er-Zn-based oxide, In-Tm-Zn-based oxide, In-Yb-Zn-based oxide, In-Lu-Zn-based oxide, In-Sn-Ga-Zn-based oxide, In-Hf-Ga-Zn-based oxide, In -Al-Ga-Zn-based oxide, In-Sn-Al-Zn-based oxide, In-Sn- f-Zn-based oxide can be used In-Hf-Al-Zn-based oxide.

Note that here, an In—Ga—Zn-based oxide means an oxide containing In, Ga, and Zn as its main components, and there is no limitation on the ratio of In, Ga, and Zn. Moreover, metal elements other than In, Ga, and Zn may be contained.

As a method for forming the oxide semiconductor film 110, a sputtering method, an MBE (Molecular Beam Epitaxy) method, a CVD method, a pulse laser deposition method, an ALD (Atomic Layer Deposition) method, or the like can be used as appropriate. In particular, when the oxide semiconductor film 110 is formed, a sputtering method is preferable because a dense film is formed.

When the oxide semiconductor film is formed as the oxide semiconductor film 110, it is preferable to reduce the concentration of hydrogen contained in the film as much as possible. In order to reduce the hydrogen concentration, for example, when film formation is performed using a sputtering method, it is necessary not only to evacuate the film formation chamber to a high vacuum but also to increase the purity of the sputtering gas. As the oxygen gas or argon gas used as the sputtering gas, a gas having a dew point of −40 ° C. or lower, preferably −80 ° C. or lower, more preferably −100 ° C. or lower, more preferably −120 ° C. or lower is used. Thus, moisture and the like can be prevented from being taken into the oxide semiconductor film as much as possible.

In order to remove moisture remaining in the deposition chamber, an adsorption-type vacuum pump such as a cryopump, an ion pump, or a titanium sublimation pump is preferably used. Further, a turbo molecular pump provided with a cold trap may be used. The film formation chamber evacuated using a cryopump has a high exhaust capability such as a compound containing hydrogen atoms (more preferably a compound containing carbon atoms) such as hydrogen molecules and water (H ₂ O). The concentration of impurities contained in the film formed in the film chamber can be reduced.

In the case where an oxide semiconductor film is formed as the oxide semiconductor film 110 by a sputtering method, the relative density (filling rate) of the metal oxide target used for film formation is 90% to 100%, preferably 95% or more. 100% or less. By using a metal oxide target having a high relative density, a film to be formed can be a dense film.

Note that formation of an oxide semiconductor film as the oxide semiconductor film 110 with the substrate 102 held at a high temperature is also effective in reducing the concentration of impurities that can be contained in the oxide semiconductor film. The temperature for heating the substrate 102 may be 150 ° C. or higher and 450 ° C. or lower, and preferably the substrate temperature is 200 ° C. or higher and 350 ° C. or lower.

Next, it is preferable to perform the first heat treatment. The first heat treatment may be performed at a temperature of 250 ° C. to 650 ° C., preferably 300 ° C. to 500 ° C., in an inert gas atmosphere, an atmosphere containing an oxidizing gas of 10 ppm or more, or a reduced pressure state. The atmosphere of the first heat treatment may be performed in an atmosphere containing 10 ppm or more of an oxidizing gas in order to supplement desorbed oxygen after heat treatment in an inert gas atmosphere. By the first heat treatment, crystallinity of the oxide semiconductor used for the oxide semiconductor film 110 can be increased and impurities such as hydrogen and water can be removed from the first insulating film 108 and the oxide semiconductor film 110. Note that the first heating step may be performed before the oxide semiconductor film 110 is processed into an island shape.

<< First electrode, second electrode >>
As a material of the conductive film 112 that can be used for the first electrode 112a and the second electrode 112b, a single metal made of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten is used. Alternatively, an alloy containing this as a main component can be used as a single layer structure or a stacked structure. In particular, it preferably contains one or more elements selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten. For example, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a tungsten film, a two-layer structure in which a copper film is laminated on a copper-magnesium-aluminum alloy film, a titanium film, or nitriding A titanium film, a three-layer structure in which an aluminum film or a copper film is laminated on the titanium film or the titanium nitride film, and a titanium film or a titanium nitride film is further formed thereon; a molybdenum film or a molybdenum nitride film; and There is a three-layer structure in which an aluminum film or a copper film is stacked over a molybdenum film or a molybdenum nitride film, and a molybdenum film or a molybdenum nitride film is further formed thereon. Note that a transparent conductive material containing indium oxide, tin oxide, or zinc oxide may be used. Further, the conductive film can be formed using, for example, a sputtering method.

<< Insulating films 114 and 116 >>
The second insulating film 120 illustrates a three-layer structure of insulating films 114, 116, and 118. Note that the structure of the second insulating film 120 is not limited thereto, and may be, for example, a single-layer structure, a two-layer structure, or a four-layer structure.

As the insulating films 114 and 116, an inorganic insulating material containing oxygen can be used in order to improve interface characteristics with the oxide semiconductor used as the oxide semiconductor film 110. As the inorganic insulating material containing oxygen, for example, a silicon oxide film, a silicon oxynitride film, or the like can be given. The insulating films 114 and 116 can be formed using, for example, a PE-CVD method.

The thickness of the insulating film 114 can be 5 nm to 150 nm, preferably 5 nm to 50 nm, preferably 10 nm to 30 nm. The thickness of the insulating film 116 can be greater than or equal to 30 nm and less than or equal to 500 nm, preferably greater than or equal to 150 nm and less than or equal to 400 nm.

In addition, since the insulating films 114 and 116 can be formed using the same kind of insulating film, the interface between the insulating film 114 and the insulating film 116 may not be clearly confirmed. Therefore, in this embodiment mode, the interface between the insulating film 114 and the insulating film 116 is indicated by a broken line. Note that although a two-layer structure of the insulating film 114 and the insulating film 116 has been described in this embodiment mode, the present invention is not limited to this. For example, a single-layer structure of the insulating film 114, a single-layer structure of the insulating film 116, Or it is good also as a laminated structure of three or more layers.

The insulating film 118 is a film formed of a material that prevents external impurities such as water, alkali metal, alkaline earth metal, and the like from diffusing into the oxide semiconductor film 110, and further contains hydrogen.

As an example of the insulating film 118, a silicon nitride film, a silicon nitride oxide film, or the like with a thickness of 150 nm to 400 nm can be used. In this embodiment, a 150-nm-thick silicon nitride film is used as the insulating film 118.

In addition, the silicon nitride film is preferably formed at a high temperature in order to improve blocking properties from impurities and the like, for example, a substrate temperature of 100 ° C. or higher and a substrate strain point or lower, more preferably 300 ° C. or higher and 400 ° C. or lower. It is preferable to form a film by heating at a temperature of. In the case where the film is formed at a high temperature, oxygen may be desorbed from the oxide semiconductor used as the oxide semiconductor film 110 and a carrier concentration may increase. Therefore, the temperature is set such that such a phenomenon does not occur.

<< Conductive Film 122a, Gate Electrode 122c >>
As the conductive film that can be used for the conductive film 122a and the gate electrode 122c, an oxide containing indium may be used. For example, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), indium A light-transmitting conductive material such as zinc oxide or indium tin oxide to which silicon oxide is added can be used. As a conductive film that can be used for the conductive films 122a and 122b, for example, a sputtering method can be used.

Note that the structures, methods, and the like described in this embodiment can be combined as appropriate with any of the structures, methods, and the like described in the other embodiments.

(Embodiment 6)
In this embodiment, a method for manufacturing a stack that can be used for manufacturing the input device or the input / output device of one embodiment of the present invention will be described with reference to FIGS.

FIG. 8 is a schematic view for explaining a process for producing a laminate. A cross-sectional view illustrating the configuration of the processed member and the laminated body is shown on the left side of FIG. 8, and a corresponding top view is shown on the right side except for FIG.

<Method for producing laminate>
A method for producing the laminate 81 from the processed member 80 will be described with reference to FIG.

The processing member 80 includes a first substrate F1, a first peeling layer F2 on the first substrate F1, a first peeling layer F3 whose one surface is in contact with the first peeling layer F2, and a first A bonding layer 30 in which one surface is in contact with the other surface of the layer to be peeled F3 and a substrate S5 in contact with the other surface of the bonding layer 30 (FIGS. 8A-1 and 8A). 2)).

Details of the configuration of the processed member 80 will be described in the seventh embodiment.

《Formation of peeling start point》
A processed member 80 is prepared in which a separation starting point F3s is formed in the vicinity of the end of the bonding layer 30.

The peeling start point F3s has a structure in which a part of the first layer to be peeled F3 is separated from the first substrate F1.

A part of the first layer to be peeled F3 using a method of piercing the first layer to be peeled F3 with a sharp tip from the first substrate F1 side or a method using a laser or the like (for example, laser ablation method). Can be partially peeled from the release layer F2. Thereby, the peeling start point F3s can be formed.

<< First Step >>
A processed member 80 is prepared in which a separation starting point F3s is formed in the vicinity of the end portion of the bonding layer 30 in advance (see FIGS. 8B-1 and 8B-2).

<< Second Step >>
One surface layer 80b of the processed member 80 is peeled off. As a result, the first remaining portion 80a is obtained from the processed member 80.

Specifically, the first substrate F1 is separated from the first peelable layer F3 together with the first peelable layer F2 from the peeling start point F3s formed near the end of the bonding layer 30 (FIG. 8C )reference). Thereby, the 1st remaining part 80a provided with the base material S5 which the 1st to-be-separated layer F3, the bonding layer 30 in which one surface contact | connects the 1st to-be-separated layer F3, and the other surface of the bonding layer 30 contacts is obtained.

Alternatively, the vicinity of the interface between the peeling layer F2 and the layer to be peeled F3 may be irradiated with ions to peel off while removing static electricity. Specifically, you may irradiate the ion produced | generated using the ionizer.

Further, when the layer to be peeled is peeled from the peeling layer F2, the liquid is permeated into the interface between the peeling layer F2 and the layer to be peeled F3. Alternatively, the liquid may be ejected from the nozzle 99 and sprayed. For example, water, a polar solvent, or the like can be used for the liquid to be permeated or the liquid to be sprayed.

By infiltrating the liquid, it is possible to suppress the influence of static electricity or the like generated with the peeling. Moreover, you may peel, infiltrating the liquid which melt | dissolves a peeling layer.

In particular, when a film containing tungsten oxide is used for the peeling layer F2, if the first peeled layer F3 is peeled while infiltrating or spraying a liquid containing water, the stress accompanying the peeling applied to the first peeled layer F3 Can be reduced.

《Third step》
The first adhesive layer 31 is formed on the first remaining portion 80a, and the first remaining portion 80a and the first support body 41 are bonded together using the first adhesive layer 31 (FIG. 8D-1 and FIG. 8 (D-2)). Thereby, the laminated body 81 is obtained from the 1st remaining part 80a.

Specifically, the first support 41, the first adhesive layer 31, the first peeled layer F3, the bonding layer 30 whose one surface is in contact with the first peeled layer F3, and the bonding layer The base material S5 which the base material S5 which the other surface of 30 touches is obtained (refer FIG. 8 (E-1) and FIG. 8 (E-2)).

Various methods can be used for forming the bonding layer 30. For example, the bonding layer 30 is formed using a dispenser, a screen printing method, or the like. The bonding layer 30 is cured using a method corresponding to the material used for the bonding layer 30. For example, in the case where a photocurable adhesive is used for the bonding layer 30, light including light having a predetermined wavelength is irradiated.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 7)
In this embodiment, a method for manufacturing a stack that can be used for manufacturing an input device or an input / output device of one embodiment of the present invention will be described with reference to FIGS.

FIG. 9 and FIG. 10 are schematic views for explaining a process for producing a laminated body. 9 and 10 are cross-sectional views illustrating the configuration of the processed member and the laminated body, and the corresponding top views are shown except for FIGS. 9C, 10B, and 10C. Shown on the right.

<Method for producing laminate>
A method of manufacturing the laminate 92 from the processed member 90 will be described with reference to FIGS.

The processed member 90 is different from the processed member 80 in that the other surface of the bonding layer 30 is in contact with one surface of the second layer to be peeled S3 instead of the substrate S5.

Specifically, instead of the base material S5, the second substrate S1, the second peeling layer S2 on the second substrate S1, and the second peeling layer where the second peeling layer S2 is in contact with the other surface. It has S3, and is different in that one surface of the second peelable layer S3 is in contact with the other surface of the bonding layer 30.

The processed member 90 includes a first substrate F1, a first peeling layer F2, a first peeling layer F3 whose one surface is in contact with the first peeling layer F2, and the other of the first peeling layer F3. A bonding layer 30 with one surface in contact with the other surface, a second layer to be peeled S3 with one surface in contact with the other surface of the bonding layer 30, and one surface with the other surface of the second layer to be peeled S3. The second peeling layer S2 in contact with the second substrate S1 and the second substrate S1 are arranged in this order (see FIGS. 9A-1 and 9A-2).

Details of the configuration of the processed member 90 will be described in a seventh embodiment.

<< First Step >>
A processed member 90 is prepared in which a separation starting point F3s is formed in the vicinity of the end of the bonding layer 30 (see FIGS. 9B-1 and 9B-2).

The peeling start point F3s has a structure in which a part of the first layer to be peeled F3 is separated from the first substrate F1.

For example, by using a method of piercing the first layer to be peeled F3 with a sharp tip from the first substrate F1 side, a method using a laser or the like (for example, a laser ablation method), etc. A part can be partially peeled from the peeling layer F2. Thereby, the peeling start point F3s can be formed.

<< Second Step >>
One surface layer 90b of the processed member 90 is peeled off. As a result, the first remaining portion 90a is obtained from the processed member 90.

Specifically, the first substrate F1 is separated from the first peelable layer F3 together with the first peelable layer F2 from the peeling start point F3s formed in the vicinity of the end of the bonding layer 30 (FIG. 9C )reference). Accordingly, the first layer to be peeled F3, the bonding layer 30 in which one surface is in contact with the first layer to be peeled F3, and the second layer to be peeled S3 in which one surface is in contact with the other surface of the bonding layer 30. Then, the first remaining portion 90a in which the second peeling layer S2 whose one surface is in contact with the other surface of the second layer to be peeled S3 and the second substrate S1 are arranged in this order is obtained.

Alternatively, the interface between the release layer S2 and the layer to be peeled S3 may be irradiated with ions to release the static electricity while removing the static electricity. Specifically, you may irradiate the ion produced | generated using the ionizer.

Further, when the layer to be peeled is peeled from the peeling layer S2, the liquid is permeated into the interface between the peeling layer S2 and the layer to be peeled S3. Alternatively, the liquid may be ejected from the nozzle 99 and sprayed. For example, water, a polar solvent, or the like can be used for the liquid to be permeated or the liquid to be sprayed.

By infiltrating the liquid, it is possible to suppress the influence of static electricity or the like generated with the peeling. Moreover, you may peel, infiltrating the liquid which melt | dissolves a peeling layer.

In particular, when a film containing tungsten oxide is used for the peeling layer S2, if the first peeled layer S3 is peeled while infiltrating or spraying a liquid containing water, the stress accompanying the peeling applied to the first peeled layer S3 Can be reduced.

《Third step》
A first adhesive layer 31 is formed on the first remaining portion 90a (see FIG. 9D-1 and FIG. 9D-2), and the first remaining portion 90a and the first remaining portion 90a are formed using the first adhesive layer 31. 1 support body 41 is bonded together. Thereby, the laminated body 91 is obtained from the 1st remaining part 90a.

Specifically, the first support 41, the first adhesive layer 31, the first peeled layer F3, the bonding layer 30 whose one surface is in contact with the first peeled layer F3, and the bonding layer A second peelable layer S3 in which one surface is in contact with the other surface of 30; a second peelable layer S2 in which one surface is in contact with the other surface of the second peelable layer S3; and a second substrate S1 Then, a stacked body 91 is arranged in this order (see FIGS. 9E-1 and 9E-2).

<< Sixth Step >>
A part of the second layer to be peeled S3 in the vicinity of the end of the first adhesive layer 31 of the laminated body 91 is separated from the second substrate S1 to form a second peeling starting point 91s.

For example, the first support body 41 and the first adhesive layer 31 are cut from the first support body 41 side, and the second object is formed along the edge of the newly formed first adhesive layer 31. A part of the release layer S3 is separated from the second substrate S1.

Specifically, the first adhesive layer 31 and the first support body 41 in the region where the second layer to be peeled S3 is provided on the peeling layer S2 are used by using a blade having a sharp tip or the like. A portion of the second layer to be peeled S3 is separated from the second substrate S1 along the edge of the first adhesive layer 31 that has been cut and newly formed (FIG. 10A-1) and (See FIG. 10A-2).

By this step, a separation starting point 91 s is formed in the vicinity of the end portions of the newly formed first support body 41 b and the first adhesive layer 31.

<< Seventh Step >>
The second remaining portion 91a is separated from the stacked body 91. Thereby, the second remaining portion 91a is obtained from the stacked body 91. (See FIG. 10C).

Specifically, the second substrate S1 is separated from the second peelable layer S3 together with the second peelable layer S2 from the peeling starting point 91s formed near the end of the first adhesive layer 31. Thus, the first support 41b, the first adhesive layer 31, the first peeled layer F3, the bonding layer 30 whose one surface is in contact with the first peeled layer F3, and the bonding layer 30 A second remaining portion 91a is obtained in which the second layer to be peeled S3 whose one surface is in contact with the other surface is disposed in this order.

Alternatively, the interface between the release layer S2 and the layer to be peeled S3 may be irradiated with ions to release the static electricity while removing the static electricity. Specifically, you may irradiate the ion produced | generated using the ionizer.

Further, when the layer to be peeled is peeled from the peeling layer S2, the liquid is permeated into the interface between the peeling layer S2 and the layer to be peeled S3. Alternatively, the liquid may be ejected from the nozzle 99 and sprayed. For example, water, a polar solvent, or the like can be used for the liquid to be permeated or the liquid to be sprayed.

By infiltrating the liquid, it is possible to suppress the influence of static electricity or the like generated with the peeling. Moreover, you may peel, infiltrating the liquid which melt | dissolves a peeling layer.

In particular, when a film containing tungsten oxide is used for the peeling layer S2, if the first peeled layer S3 is peeled while infiltrating or spraying a liquid containing water, the stress accompanying the peeling applied to the first peeled layer S3 Can be reduced.

<< Ninth Step >>
The second adhesive layer 32 is formed on the second remaining portion 91a (see FIG. 10D-1 and FIG. 10D-2).

The second remaining portion 91 a and the second support 42 are bonded together using the second adhesive layer 32. Through this step, the stacked body 92 is obtained from the second remaining portion 91a (see FIGS. 10E-1 and 10E-2).

Specifically, the first support 41b, the first adhesive layer 31, the first peeled layer F3, the bonding layer 30 whose one surface is in contact with the first peeled layer F3, and the bonding layer The stacked body 92 is provided with the second peelable layer S3 whose one surface is in contact with the other surface 30, the second adhesive layer 32, and the second support 42 in this order.

<Method for Producing Laminate Having Opening in Support>
A method for manufacturing a stacked body having an opening on a support will be described with reference to FIGS.

FIG. 11 is a diagram illustrating a method for manufacturing a stacked body having an opening through which a part of a layer to be peeled is exposed in a support. A cross-sectional view illustrating the configuration of the stacked body is shown on the left side of FIG. 11, and a corresponding top view is shown on the right side.

11A-1 to 11B-2 are diagrams illustrating a method for manufacturing a stacked body 92c having an opening using a second support 42b smaller than the first support 41b. is there.

11C-1 to 11D-2 are diagrams illustrating a method for manufacturing the stacked body 92d having an opening formed in the second support 42. FIG.

<< Example 1 of Manufacturing Method of Laminate Having Opening on Support >>
In the ninth step, a laminate manufacturing method having the same steps except that a second support 42b smaller than the first support 41b is used instead of the second support 42. It is. Accordingly, a stacked body in which part of the second layer to be peeled S3 is exposed can be manufactured (see FIGS. 11A-1 and 11A-2).

A liquid adhesive can be used for the second adhesive layer 32. Alternatively, an adhesive (also referred to as a sheet-like adhesive) that is suppressed in fluidity and is previously formed into a sheet shape can be used. If a sheet-like adhesive is used, the amount of the adhesive layer 32 that protrudes outside the second support 42b can be reduced. Further, the thickness of the adhesive layer 32 can be easily made uniform.

Further, the exposed portion of the second layer to be peeled S3 may be cut out so that the first layer to be peeled F3 is exposed (see FIGS. 11B-1 and 11B-2). ).

Specifically, scratches are formed on the exposed second layer to be peeled S3 using a blade or the like having a sharp tip. Next, for example, an adhesive tape or the like is applied to a part of the exposed second peelable layer S3 so that stress is concentrated in the vicinity of the scratch, and the second peelable layer S3 is attached together with the applied tape or the like. A part of the film can be peeled off, and the part can be selectively excised.

Further, a layer capable of suppressing the adhesion force of the bonding layer 30 to the first layer to be peeled F3 may be selectively formed on a part of the first layer to be peeled F3. For example, a material that is difficult to adhere to the bonding layer 30 may be selectively formed. Specifically, the organic material may be deposited in an island shape. As a result, a part of the bonding layer 30 can be easily selectively removed together with the second layer to be peeled S3. As a result, the first layer to be peeled F3 can be exposed.

For example, when the first layer to be peeled F3 includes a functional layer and a conductive layer F3b electrically connected to the functional layer, the conductive layer F3b is exposed to the opening of the second stacked body 92c. be able to. Thereby, for example, the conductive layer F3b exposed in the opening can be used as a terminal to which a signal is supplied.

As a result, the conductive layer F3b partially exposed in the opening can be used as a terminal from which a signal supplied from the functional layer can be extracted. Alternatively, a signal to which a functional layer is supplied can be used for a terminal to which an external device can supply.

<< Example 2 of Manufacturing Method of Laminate Having Opening on Support >>
A mask 48 having an opening provided so as to overlap with the opening provided in the second support 42 is formed in the stacked body 92. Next, the solvent 49 is dropped into the opening of the mask 48. Accordingly, the second support 42 exposed to the opening of the mask 48 can be swollen or dissolved using the solvent 49 (see FIGS. 11C-1 and 11C-2).

After the excess solvent 49 is removed, stress is applied by rubbing the second support 42 exposed in the opening of the mask 48. Thereby, the second support 42 and the like that overlap the opening of the mask 48 can be removed.

In addition, if a solvent that swells or dissolves the bonding layer 30 is used, the first layer to be peeled F3 can be exposed (see FIGS. 11D-1 and 11D-2).

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 8)
In this embodiment, a structure of a processed member that can be processed into the input device or the input / output device of one embodiment of the present invention will be described with reference to FIGS.

FIG. 12 is a schematic diagram illustrating the configuration of a processed member that can be processed into a laminate.

12A-1 is a cross-sectional view illustrating a configuration of a processed member 80 that can be processed into a laminate, and FIG. 12A-2 is a corresponding top view.

FIG. 12B-1 is a cross-sectional view illustrating a configuration of a processed member 90 that can be processed into a laminate, and FIG. 12B-2 is a corresponding top view.

<1. Example of processing member configuration>
The processing member 80 includes a first substrate F1, a first peeling layer F2 on the first substrate F1, a first peeling layer F3 whose one surface is in contact with the first peeling layer F2, and a first 12 (A-1) and FIG. 12 (A-2) having a bonding layer 30 in which one surface is in contact with the other surface of the layer to be peeled F3 and a base material S5 in contact with the other surface of the bonding layer 30. ).

The separation starting point F3s may be provided in the vicinity of the end of the bonding layer 30.

<< First substrate >>
The first substrate F1 is not particularly limited as long as it has heat resistance enough to withstand the manufacturing process and a thickness and size applicable to the manufacturing apparatus.

An organic material, an inorganic material, a composite material of an organic material and an inorganic material, or the like can be used for the first substrate F1.

For example, an inorganic material such as glass, ceramics, or metal can be used for the first substrate F1.

Specifically, alkali-free glass, soda-lime glass, potash glass, crystal glass, or the like can be used for the first substrate F1.

Specifically, a metal oxide film, a metal nitride film, a metal oxynitride film, or the like can be used for the first substrate F1. For example, silicon oxide, silicon nitride, silicon oxynitride, an alumina film, or the like can be used for the first substrate F1.

Specifically, SUS, aluminum, or the like can be used for the first substrate F1.

For example, an organic material such as a resin, a resin film, or plastic can be used for the first substrate F1.

Specifically, a resin film or a resin plate such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or acrylic resin can be used for the first substrate F1.

For example, a composite material in which a film such as a metal plate, a thin glass plate, or an inorganic material is bonded to a resin film or the like can be used for the first substrate F1.

For example, a composite material in which a fibrous or particulate metal, glass, inorganic material, or the like is dispersed in a resin film can be used for the first substrate F1.

For example, a composite material in which a fibrous or particulate resin, an organic material, or the like is dispersed in an inorganic material can be used for the first substrate F1.

In addition, a single layer material or a stacked material in which a plurality of layers are stacked can be used for the first substrate F1. For example, a stacked material in which a base material and an insulating layer that prevents diffusion of impurities contained in the base material are stacked can be used for the first substrate F1.

Specifically, a laminated material in which one or a plurality of films selected from glass, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like that prevents diffusion of impurities contained in the glass is laminated, is used as the first substrate. Applicable to F1.

Alternatively, a stacked material in which a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like that prevents resin and diffusion of impurities that permeate the resin is stacked can be applied to the first substrate F1.

<< First Release Layer >>
The first peeling layer F2 is provided between the first substrate F1 and the first peeled layer F3. The first peeling layer F2 is a layer in which a boundary capable of separating the first peeling layer F3 from the first substrate F1 is formed in the vicinity thereof. The first release layer F2 is not particularly limited as long as the release layer is formed on the first release layer F2 and has heat resistance enough to withstand the manufacturing process of the first release layer F3.

For example, an inorganic material, an organic resin, or the like can be used for the first peeling layer F2.

Specifically, a metal containing an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, silicon, an alloy containing the element, or the An inorganic material such as a compound containing an element can be used for the first release layer F2.

Specifically, an organic material such as polyimide, polyester, polyolefin, polyamide, polycarbonate, or acrylic resin can be used.

For example, a single layer material or a material in which a plurality of layers are stacked can be used for the first peeling layer F2.

Specifically, a material in which a layer containing tungsten and a layer containing an oxide of tungsten are stacked can be used for the first separation layer F2.

Note that the layer containing an oxide of tungsten can be formed by a method in which another layer is stacked on the layer containing tungsten. Specifically, a layer containing an oxide of tungsten may be formed by a method of stacking silicon oxide, silicon oxynitride, or the like on a layer containing tungsten.

In addition, a layer containing tungsten oxide, a surface of the layer containing tungsten is subjected to thermal oxidation treatment, oxygen plasma treatment, nitrous oxide (N ₂ O) plasma treatment, or a solution having strong oxidizing power (eg, ozone water). You may form by the process etc. to be used.

Specifically, a layer containing polyimide can be used for the first peeling layer F2. The layer containing polyimide has heat resistance enough to withstand various manufacturing processes required when forming the first layer to be peeled F3.

For example, the layer containing polyimide has heat resistance of 200 ° C. or higher, preferably 250 ° C. or higher, more preferably 300 ° C. or higher, more preferably 350 ° C. or higher.

A film containing polyimide condensed by heating the film containing the monomer formed on the first substrate F1 can be used.

<< first peeled layer >>
The first peelable layer F3 is not particularly limited as long as it can be separated from the first substrate F1 and has heat resistance enough to withstand the manufacturing process.

The boundary where the first peelable layer F3 can be separated from the first substrate may be formed between the first peelable layer F3 and the first peelable layer F2, and the first peelable layer F2 And the first substrate F1.

In the case where a boundary is formed between the first peelable layer F3 and the first peelable layer F2, the first peelable layer F2 is not included in the stacked body, and the first peelable layer F2 and the first substrate F1. In the case where a boundary is formed between the first release layers F2, the first release layer F2 is included in the laminate.

An inorganic material, an organic material, a single layer material, a stacked material in which a plurality of layers are stacked, or the like can be used for the first layer F3.

For example, an inorganic material such as a metal oxide film, a metal nitride film, or a metal oxynitride film can be used for the first peel-off layer F3.

Specifically, silicon oxide, silicon nitride, silicon oxynitride, an alumina film, or the like can be used for the first peel-off layer F3.

For example, a resin, a resin film, a plastic, or the like can be used for the first layer to be peeled F3.

Specifically, a polyimide film or the like can be used for the first layer to be peeled F3.

For example, a functional layer that overlaps with the first release layer F2 and an insulating layer that can prevent unintended diffusion of impurities that impair the function of the functional layer are stacked between the first release layer F2 and the functional layer. A material having a different structure can be used.

Specifically, a laminated material in which a glass plate having a thickness of 0.7 mm is used for the first substrate F1 and a silicon oxynitride film having a thickness of 200 nm and a tungsten film having a thickness of 30 nm are sequentially stacked from the first substrate F1 side. Used for the first release layer F2. A film including a stacked material in which a silicon oxynitride film having a thickness of 600 nm and a silicon nitride having a thickness of 200 nm are stacked in this order from the first peeling layer F2 side can be used for the first peeling layer F3. Note that the silicon oxynitride film has a higher oxygen composition than the nitrogen composition, and the silicon nitride oxide film has a higher nitrogen composition than the oxygen composition.

Specifically, instead of the first layer to be peeled F3, a silicon oxynitride film with a thickness of 600 nm, a silicon nitride with a thickness of 200 nm, and a silicon oxynitride with a thickness of 200 nm are sequentially formed from the first peeling layer F2 side. A film including a stacked material in which a film, a silicon nitride oxide film with a thickness of 140 nm and a silicon oxynitride film with a thickness of 100 nm are stacked can be used as the layer to be peeled.

Specifically, a stacked material in which a polyimide film, a layer containing silicon oxide, silicon nitride, or the like, and a functional layer are sequentially stacked from the first release layer F2 side can be used.

<Functional layer>
The functional layer is included in the first layer to be peeled F3.

For example, a functional circuit, a functional element, an optical element, a functional film, or the like, or a layer including a plurality selected from these can be used for the functional layer.

Specifically, a display element that can be used in a display device, a pixel circuit that drives the display element, a drive circuit that drives the pixel circuit, a color filter, a moisture-proof film, or a layer including a plurality selected from these Can do.

<Joint layer>
The joining layer 30 will not be specifically limited if it joins the 1st to-be-separated layer F3 and base material S5.

An inorganic material, an organic material, a composite material of an inorganic material and an organic material, or the like can be used for the bonding layer 30.

For example, a glass layer or an adhesive having a melting point of 400 ° C. or lower, preferably 300 ° C. or lower can be used.

For example, an organic material such as a photocurable adhesive, a reactive curable adhesive, a thermosetting adhesive, and / or an anaerobic adhesive can be used for the bonding layer 30.

Specifically, an adhesive including epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, and the like. Can be used.

"Base material"
Base material S5 will not be specifically limited if it is provided with the heat resistance of the grade which can endure a manufacturing process, and the thickness and magnitude | size applicable to a manufacturing apparatus.

As a material that can be used for the base material S5, for example, the same material as that of the first substrate F1 can be used.

《Starting point of peeling》
The processed member 80 may have a separation starting point F3s in the vicinity of the end of the bonding layer 30.

The peeling start point F3s has a structure in which a part of the first layer to be peeled F3 is separated from the first substrate F1.

A part of the first layer to be peeled F3 using a method of piercing the first layer to be peeled F3 with a sharp tip from the first substrate F1 side or a method using a laser or the like (for example, laser ablation method). Can be partially peeled from the release layer F2. Thereby, the peeling start point F3s can be formed.

<2. Configuration Example 2 of Processing Member>
A structure of a processed member different from the above, which can be a laminated body, will be described with reference to FIGS. 12B-1 and 12B-2.

The processed member 90 is different from the processed member 80 in that the other surface of the bonding layer 30 is in contact with one surface of the second layer to be peeled S3 instead of the substrate S5.

Specifically, the processed member 90 includes a first substrate F1 on which a first peeling layer F3 having a first surface in contact with the first peeling layer F2 and the first peeling layer F2, and a second substrate F1 is formed. The second substrate S1 on which the second layer to be peeled S3 in contact with the peeling layer S2 and the second peeling layer S2 is formed, and one surface on the other surface of the first peeling layer F3. And a bonding layer 30 in contact with one surface of the second layer to be peeled S3 and the other surface. (See FIGS. 12B-1 and 12B-2).

<< second substrate >>
The second substrate S1 can be the same as the first substrate F1. Note that the second substrate S1 need not have the same configuration as the first substrate F1.

<< second release layer >>
The second release layer S2 can have a configuration similar to that of the first release layer F2. Further, the second release layer S2 can have a different structure from the first release layer F2.

<< Second peelable layer >>
The second layer to be peeled S3 can have a structure similar to that of the first layer to be peeled F3. Further, the second layer to be peeled S3 may have a different structure from the first layer to be peeled F3.

Specifically, the first peel-off layer F3 may include a functional circuit, and the second peel-off layer S3 may include a functional layer that prevents diffusion of impurities into the functional circuit.

Specifically, the first peelable layer F3 includes a light emitting element that emits light toward the second peelable layer, a pixel circuit that drives the light emitting element, and a drive circuit that drives the pixel circuit. The second peelable layer S3 may include a color filter that transmits part of light emitted from the element and a moisture-proof film that prevents unintentional diffusion of impurities into the light-emitting element. Note that the processed member having such a structure can be a stacked body that can be used as a flexible display device.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 9)
In this embodiment, a structure of an information processing device that can be formed using the input / output device of one embodiment of the present invention is described with reference to FIGS.

FIG. 13 illustrates an information processing device of one embodiment of the present invention.

FIG. 13A is a projection view illustrating a state in which the input / output device K20 of the information processing device K100 according to one embodiment of the present invention is expanded, and FIG. 13B is a cut line X1- in FIG. It is sectional drawing of information processing apparatus K100 in X2. FIG. 13C is a projection view illustrating a state in which the input / output device K20 is folded.

<Configuration example of information processing apparatus>
An information processing device K100 described in this embodiment includes an input / output device K20, an arithmetic device K10, and housings K01 (1) to K01 (3) (see FIG. 13).

<Input / output device>
The input / output device K20 includes a display unit K30 and an input device K40. The input / output device K20 is supplied with the image information V and supplies the detection information S.

The display unit K30 is supplied with the image information V, and the input device K40 supplies the detection information S (see FIG. 13B).

The input / output device K20 in which the input device K40 and the display unit K30 are integrally stacked is the display unit K30 and the input device K40.

The input / output device K20 using a touch sensor for the input device K40 and a display panel for the display unit K30 is a touch panel.

<Display section>
The display unit K30 includes a first region K31 (11), a first bendable region K31 (21), a second region K31 (12), a second bendable region K31 (22), and a third region K31. (13) has a region K31 arranged in a stripe pattern in this order (see FIG. 13A).

The display unit K30 is folded at the first fold formed in the first bendable region K31 (21) and the second fold formed in the second bendable region K31 (22), and An expanded state can be obtained (see FIGS. 13A and 13C).

《Calculation device》
The calculation device K10 includes a calculation unit and a storage unit that stores a program to be executed by the calculation unit. In addition, image information V and detection information S are supplied.

<Case>
The housing includes a housing K01 (1), a hinge K02 (1), a housing K01 (2), a hinge K02 (2), and a housing K01 (3), which are arranged in this order.

The housing K01 (3) houses the arithmetic device K10. The housings K01 (1) to K01 (3) can hold the input / output device K20 so that the input / output device K20 is folded or unfolded (FIG. 13B). reference).

In the present embodiment, an information processing apparatus having a configuration in which three housings are connected using two hinges is illustrated. An information processing apparatus having this configuration can fold the input / output device K20 at two locations.

Note that n (n is a natural number of 2 or more) casings may be connected using (n−1) hinges. An information processing apparatus having this configuration can fold the input / output device K20 at (n-1) locations.

The housing K01 (1) overlaps with the first region K31 (11) and includes a button K45 (1).

The housing K01 (2) overlaps with the second region K31 (12).

The housing K01 (3) overlaps with the third region K31 (13) and houses the arithmetic device K10, the antenna K10A, and the battery K10B.

The hinge K02 (1) overlaps the first bendable region K31 (21) and connects the housing K01 (1) to the housing K01 (2) so as to be rotatable.

The hinge K02 (2) overlaps the second bendable region K31 (22), and connects the housing K01 (2) to the housing K01 (3) so as to be rotatable.

The antenna K10A is electrically connected to the arithmetic device K10 and is supplied with or supplied with a signal.

The antenna K10A is wirelessly supplied with power from an external device, and supplies power to the battery K10B.

The battery K10B is electrically connected to the arithmetic device K10 and supplies or supplies power.

<Folding sensor>
The folding sensor K41 detects whether the casing is folded or unfolded, and supplies information indicating the state of the casing.

The arithmetic device K10 is supplied with information indicating the state of the housing.

When the information indicating the state of the housing K01 is information indicating the folded state, the arithmetic device K10 supplies the image information V including the first image to the first region K31 (11) (FIG. 13C )reference).

When the information indicating the state of the housing K01 is information indicating the developed state, the arithmetic device K10 supplies the image information V to the region K31 of the display unit K30 (FIG. 13A).

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 10)
In this embodiment, a structure of an information processing device of one embodiment of the present invention will be described with reference to FIG.

FIG. 14 illustrates an information processing device of one embodiment of the present invention.

14A-1 to 14A-3 are projection views of an information processing device of one embodiment of the present invention.

14B-1 and 14B-2 are projection views of an information processing device of one embodiment of the present invention.

14C-1 to 14C-2 are a top view and a bottom view of an information processing device of one embodiment of the present invention.

<< Information processing apparatus A >>
The information processing device 3000A includes an input / output unit 3120 and a housing 3101 that supports the input / output unit 3120 (see FIGS. 14A-1 to 14A-3).

The information processing device 3000A includes a power source such as a calculation unit and a storage unit that stores a program to be executed by the calculation unit, and a battery that supplies power for driving the calculation unit.

Note that the housing 3101 houses a calculation unit, a storage unit, a battery, or the like.

The information processing apparatus 3000A can display display information on a side surface and / or an upper surface.

A user of the information processing apparatus 3000A can supply an operation command using a finger in contact with the side surface and / or the upper surface.

<< Information processing apparatus B >>
The information processing device 3000B includes an input / output unit 3120 and an input / output unit 3120b (see FIGS. 14B-1 and 14B-2).

The information processing apparatus 3000B includes a housing 3101 that supports the input / output unit 3120 and a flexible belt-shaped housing 3101b.

The information processing apparatus 3000B includes a housing 3101 that supports the input / output unit 3120b.

The information processing device 3000B includes a power source such as a calculation unit and a storage unit that stores a program to be executed by the calculation unit, and a battery that supplies power for driving the calculation unit.

Note that the housing 3101 houses a calculation unit, a storage unit, a battery, or the like.

The information processing device 3000B can display display information on the input / output unit 3120 supported by the flexible belt-shaped housing 3101b.

A user of the information processing device 3000B can supply an operation command using a finger in contact with the input / output unit 3120.

<< Information processing apparatus C >>
The information processing device 3000C includes an input / output unit 3120 and a housing 3101 and a housing 3101b that support the input / output unit 3120 (see FIGS. 14C-1 to 14C-2).

The input / output unit 3120 and the housing 3101b have flexibility.

The information processing device 3000C includes a power source such as a calculation unit and a storage unit that stores a program to be executed by the calculation unit, and a battery that supplies power for driving the calculation unit.

Note that the housing 3101 houses a calculation unit, a storage unit, a battery, or the like.

The information processing apparatus 3000C can be folded in two at the housing 3101b.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

A1 1st node A2 2nd node A3 3rd node A4 4th node BIAS wiring C1 capacitance element C2 capacitance element COM wiring CONV converter CS second control line F1 substrate F2 peeling layer F3 peeling layer F3b conductive Layer F3s Origin G1 Selection signal line K01 Housing K02 Hinge K10 Arithmetic device K10A Antenna K10B Battery K20 Input / output device K30 Display unit K31 Region K40 Input device K41 Folding sensor K45 Button K100 Information processing device M0 Transistor M10 Amplifying transistor M11 Transistor M12 Transistor M13 Transistor M14 Transistor M15 Transistor M16 Transistor M17 Transistor M18 Transistor M20 Amplifying transistor ML1 Signal line ML2 Signal line OUT Terminal OUT1 Output terminal OUT2 Output terminal PW Second wiring RES First control line S1 Substrate S2 Peeling layer S3 Peeled layer S5 Base material T1 Period T2 Period VPI wiring VRES First wiring FPC1 Flexible printed circuit board FPC2 Flexible printed circuit board 10 Detection device 10 (1 ) 1st detection part 10 (2) 2nd detection part 10U Detection unit 10UB Detection unit 10UC Detection unit 11 Electrode 12 Electrode 13 Insulating layer 14 Window part 15 Conversion circuit 16 Base material 16a Barrier film 16b Base material 16c Resin layer 17 Protective layer 30 Bonding layer 31 Adhesive layer 32 Adhesive layer 41 Support body 41b Support body 42 Support body 42b Support body 48 Mask 49 Solvent 80 Processing member 80a Remaining part 80b Surface layer 81 Laminating body 90 Processing member 90a Remaining part 90b Surface layer 91 Laminating body 91a Remaining part 91s Starting point 92 Laminated body 92c Laminated body 92d Laminated body 9 Nozzle 100 Input device 102 Substrate 102U Detection unit 104a Gate electrode 105 Conversion circuit 106 Insulating film 107 Insulating film 108 Insulating film 110 Oxide semiconductor film 112 Conductive film 112a Electrode 112b Electrode 114 Insulating film 116 Insulating film 118 Insulating film 120 Insulating film 122a Film 122b Conductive film 122c Gate electrode 142a Opening 142e Opening 151 Transistor 204 Conversion circuit 500 Input / output device 501 Display unit 502 Pixel 502B Subpixel 502G Subpixel 502R Subpixel 502t Transistor 503c Capacitor 503g Scan line driver circuit 503t Transistor 510 Base material 510a Barrier Film 510b Base material 510c Resin layer 511 Wire 519 Terminal 521 Insulating film 528 Partition 550R Light emitting element 560 Sealing material 567p Antireflection layer 580R Light emitting module Lumpur 3000A information processing apparatus 3000B processing apparatus 3000C processing apparatus 3101 housing 3101b housing 3120 input-output unit 3120b output unit

Claims (6)

A detection unit and a conversion circuit;
The detection unit is supplied with a selection signal, a first control signal and a second control signal, a first power supply potential and a constant current, and can supply a first detection signal and a second detection signal,
The conversion circuit is supplied with the first detection signal and the second detection signal, and supplies first detection information based on the first detection signal and second detection information based on the second detection signal. It is possible,
The detection unit supplies the first detection signal based on the distance to the adjacent one, and the second detection unit supplies the second detection signal based on the distance to the adjacent one. With a detector
The first detector is
The control terminal is electrically connected to a selection signal line capable of supplying a selection signal, and the first terminal is electrically connected to a first signal line capable of supplying a first detection signal. A first switch,
The control terminal is electrically connected to a first control line capable of supplying a first control signal, and the first terminal is electrically connected to a first wiring capable of supplying a first power supply potential. A second switch connected to
The gate is electrically connected to the second terminal of the second switch, the first electrode is electrically connected to the second terminal of the first switch, and the second electrode supplies the constant current. A first amplification transistor electrically connected to a second wiring that can be supplied;
A first electrode electrically connected to the gate of the first amplification transistor, and a second electrode electrically connected to a second control line capable of supplying a second control signal. And a capacitive element,
The second detector is
A control terminal is electrically connected to the selection signal line, and a first terminal is electrically connected to the second signal line; a third switch;
A fourth switch having a control terminal electrically connected to the first control line, and a first terminal electrically connected to the first wiring;
A gate is electrically connected to a second terminal of the fourth switch, a first electrode is electrically connected to a second terminal of the third switch, and a second electrode is connected to the second terminal. A second amplification transistor electrically connected to the wiring;
A detection device comprising: a second capacitive element in which a first electrode is electrically connected to a gate of the second amplification transistor, and a second electrode is electrically connected to the second control line. The detection unit includes a power source capable of supplying a constant current;
A second electrode of the first amplification transistor is electrically connected to a wiring capable of supplying a constant current supplied by the power source;
A second electrode of the second amplification transistor is electrically connected to a wiring capable of supplying a constant current supplied by the power source;
The power source has a gate electrically connected to a wiring capable of supplying a second power supply potential, a first electrode electrically connected to a wiring capable of supplying a third power supply potential, The detection device according to claim 1, wherein the two electrodes are electrically connected to the wiring supplied with a constant current.   The detection device according to claim 1, wherein the second detection unit is disposed within a range of 5 mm from the first detection unit. A first detection signal for supplying a selection signal for turning on the first switch and the third switch, a first control signal for turning on the second switch and the fourth switch; And a first step of obtaining a second detection signal;
A selection signal for turning on the first switch and the third switch, a first control signal for turning off the second switch and the fourth switch, and a pulsed second control signal A second step of obtaining a first detection signal and a second detection signal;
The first detection signal supplied in the second step is compared with the first reference signal supplied in the first step to obtain first detection information and supplied in the second step A third step of obtaining second detection information by comparing the second detection signal that has been performed with the second reference signal supplied in the first step;
4. A fourth step of comparing the first detection information acquired in the third step with the second detection information to determine detection information about a thing close to the detection device. A driving method of the detection device according to claim 3. A detection unit, a selection signal line, a first control line, a plurality of first signal lines, a plurality of second signal lines, a second control line, a first wiring, and a second A plurality of the detection units having wiring, a conversion circuit, and a base material are arranged in a matrix,
The plurality of selection signal lines are electrically connected to a plurality of detection units arranged in a row direction and can supply selection signals.
The plurality of first control lines can be electrically connected to a plurality of detection units arranged in a row direction and supply a first control signal,
The plurality of first signal lines can be electrically connected to a plurality of detection units arranged in the column direction and supply a first detection signal,
The plurality of second signal lines can be electrically connected to a plurality of detection units arranged in the column direction and supply a second detection signal,
The second control line is electrically connected to a plurality of detection units and can supply a second control signal,
The first wiring is electrically connected to a plurality of detection units and can supply a first power supply potential;
The second wiring is electrically connected to a plurality of detection units and can supply a constant current,
The conversion circuit is electrically connected to a wiring that can supply the first detection signal and a wiring that can supply the second detection signal, and can supply detection information.
Supporting the plurality of detection units, the selection signal line, the first control line, the first signal line, the second signal line, the second control line, the first wiring, and the second wiring;
The detection unit is
A first detection unit that supplies the first detection signal based on a distance to the adjacent one and a second detection unit that supplies the second detection signal based on a distance to the adjacent one;
The first detector is
The control terminal is electrically connected to a selection signal line capable of supplying a selection signal, and the first terminal is electrically connected to a first signal line capable of supplying a first detection signal. A first switch,
The control terminal is electrically connected to a first control line capable of supplying a first control signal, and the first terminal is electrically connected to a first wiring capable of supplying a first power supply potential. A second switch connected to
The gate is electrically connected to the second terminal of the second switch, the first electrode is electrically connected to the second terminal of the first switch, and the second electrode supplies the constant current. A first amplification transistor electrically connected to a second wiring that can be supplied;
A first electrode electrically connected to the gate of the first amplification transistor, and a second electrode electrically connected to a second control line capable of supplying a second control signal. And a capacitive element,
The second detector is
A control terminal is electrically connected to the selection signal line, and a first terminal is electrically connected to the second signal line; a third switch;
A fourth switch having a control terminal electrically connected to the first control line, and a first terminal electrically connected to the first wiring;
A gate is electrically connected to a second terminal of the fourth switch, a first electrode is electrically connected to a second terminal of the third switch, and a second electrode is connected to the second terminal. A second amplification transistor electrically connected to the wiring;
An input device comprising: a second capacitor element in which a first electrode is electrically connected to a gate of the second amplification transistor and a second electrode is electrically connected to the second control line.   The input device according to claim 5, wherein the second detection unit is disposed within a range of 5 mm from the first detection unit.

Images