JP2015191816A - Organic el display device, method of manufacturing organic el display device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an organic EL display device, a method of manufacturing the organic EL display device, and an electronic apparatus, capable of improving reliability by an easier method.SOLUTION: An organic EL display device includes: an element substrate having a first electrode, an organic layer containing a luminous layer and a second electrode on a first substrate in this order; and a counter element which is arranged opposite to the element substrate and has a conductive layer on an organic material layer provided on the element substrate side of the second electrode. The conductive layer has a hole which reaches at least one or more organic material layers.

Description

  The present disclosure relates to an organic EL display device that emits light using an organic electroluminescence (EL) phenomenon, a manufacturing method thereof, and an electronic apparatus including such an organic EL display device.

  In the top emission type (top emission type) organic EL display device, the upper electrode is made of a transparent electrode material, and light is extracted from the surface (upper surface) opposite to the substrate. The transparent conductive material used as the upper electrode generally has a higher resistance value than the metal material. For this reason, in a larger organic EL display device, the display performance decreases due to the influence of the voltage drop from the end region of the display surface toward the central region. On the other hand, when the thickness of the upper electrode is increased, the resistance value is lowered and the voltage drop in the display surface is reduced, but the visible light transmittance of the counter electrode is lowered and the light extraction efficiency of the light emitting element is lowered. The problem arises.

  Therefore, a top emission organic EL display device has been proposed in which an auxiliary electrode electrically connected to a second electrode (corresponding to the upper electrode) is formed on a light extraction side substrate (counter substrate) (for example, Patent Documents 1 and 2). In such an organic EL display device, the voltage drop of the second electrode is reduced by connecting the auxiliary electrode and pillar formed on the counter substrate side and the transparent conductive film covering the surface thereof to the second electrode in the display region. It is preventing.

JP 2011-103205 A JP 2013-196919 A

  However, in the organic EL display device, since a metal conductive layer such as an auxiliary electrode or a transparent conductive film is formed on the color filter on the counter substrate side, moisture or the like may remain in the color filter. Moisture contained in the color filter gradually penetrates into the organic EL element through the sealing material after assembling the display device, causing a decrease in reliability such as generation of non-light emitting defects and shortened light emitting lifetime. , Reduce the yield. In general, moisture and the like contained in the color filter can be removed by baking. However, in an organic EL display device in which the color filter is covered with a metal conductive layer, baking is performed for a long time at high temperature or under vacuum. Is necessary, and there is a problem that productivity decreases.

  The present disclosure has been made in view of such problems, and an object thereof is to provide an organic EL display device, a method for manufacturing the organic EL display device, and an electronic apparatus capable of improving reliability by a simpler method. There is.

  An organic EL display device according to the present disclosure includes an element substrate having a first electrode, an organic layer including a light emitting layer, and a second electrode in this order on a first substrate, an element substrate facing the element substrate, and an element substrate of the second substrate A counter substrate having a conductive layer on an organic material layer provided on the side, and the conductive layer has a hole reaching at least one organic material layer.

  A method of manufacturing an organic EL display device according to the present disclosure includes a step of forming an element substrate having a first electrode, an organic layer including a light emitting layer, and a second electrode in this order on a first substrate; A step of forming a counter substrate having an organic material layer and a conductive layer in this order; a step of forming at least one hole reaching the organic material layer in the conductive layer; and an element substrate and the counter substrate, And a step of bonding.

  An electronic apparatus according to the present disclosure includes the organic EL display device according to the present disclosure.

  In the organic EL display device, the manufacturing method thereof, and the electronic device of the present disclosure, moisture contained in the organic material layer is provided by providing a hole reaching the organic material layer in the conductive layer on the organic material layer provided on the counter substrate. Etc. are easily removed.

  According to the organic EL display device, the manufacturing method thereof, and the electronic device of the present disclosure, a hole reaching the organic material layer is provided in the conductive layer on the organic material layer so that moisture and the like contained in the organic material layer can be easily removed. Therefore, the reliability can be improved by a simpler method. Note that the effects described here are not necessarily limited, and may be any effects described in the present disclosure.

It is sectional drawing showing the structure of the organic electroluminescence display which concerns on one Embodiment of this indication. FIG. 2 is a plan view of the counter substrate shown in FIG. 1. It is sectional drawing showing the detailed structure of the opposing board | substrate shown in FIG. It is sectional drawing showing the detailed structure of the opposing board | substrate shown in FIG. It is sectional drawing for demonstrating the formation process of the element substrate shown in FIG. It is sectional drawing showing the process of following FIG. 4A. FIG. 4B is a cross-sectional diagram illustrating a process following the process in FIG. 4B. It is sectional drawing showing the process of following FIG. 5A. It is sectional drawing showing the process of following FIG. 5B. It is sectional drawing showing the process of following FIG. 6A. FIG. 7 is a cross-sectional view illustrating a process following FIG. 6. It is sectional drawing and a top view for demonstrating the formation process of the opposing board | substrate shown in FIG. It is sectional drawing and the top view showing the process of following FIG. FIG. 10 is a cross-sectional view and a plan view illustrating a process following FIG. 9. It is sectional drawing and the top view showing the process following FIG. It is sectional drawing for demonstrating the adhesion process of an element substrate and a counter substrate. It is a characteristic view showing the relationship between each condition and the water content in a counter substrate. It is a figure showing the whole structure containing the peripheral circuit of the display apparatus which concerns on each embodiment. It is a figure showing the circuit structure of the pixel shown in FIG. It is a top view showing schematic structure of the module containing the display apparatus shown in FIG. 14 is a perspective view illustrating an appearance of application example 1. FIG.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be given in the following order.
1. Embodiment (Example in which a hole reaching the organic material layer is formed in the conductive layer)
2. 2. Example of overall configuration of display device, pixel circuit configuration example Application example (application example to electronic equipment)

<1. Embodiment>
[Constitution]
FIG. 1 illustrates a cross-sectional configuration of an organic EL display device (organic EL display device 1) according to an embodiment of the present disclosure. In the organic EL display device 1, for example, a counter substrate 20 is bonded to an element substrate 10 on which a plurality of organic EL elements 10 </ b> A are formed as pixels via a sealing layer 30. It is a top emission type organic EL display device taken out from above. In the organic EL display device 1, for example, one pixel is composed of sub-pixels of four colors of red (R), green (G), blue (B), and white (W).

(Element substrate 10)
In the element substrate 10, a plurality of organic EL elements 10A are arranged in a matrix, for example, as pixels constituting a display area (a display area 50 described later). For example, in the element substrate 10, a TFT (Thin Film Transistor) 12 including a gate electrode 12 a, a gate insulating film 12 b, a source electrode, a drain electrode, and a semiconductor layer (not shown) is provided on the first substrate 11 as a pixel driving element. It is arranged for each. A wiring layer 13 is provided on the TFT 12 via an interlayer insulating film 12c. The wiring layer 13 is electrically connected to, for example, a source electrode or a drain electrode of the TFT 12 through a contact plug provided in the interlayer insulating film 12c. The pixel circuit including these TFT 12 and wiring layer 13 is covered with an interlayer insulating film 14. In the element substrate 10, a plurality of organic EL elements 10 </ b> A as pixels constituting the display region 50 are arranged on the interlayer insulating film 14.

The first substrate 11 is made of, for example, a glass substrate or a plastic substrate. Examples of the glass substrate include high strain point glass, soda lime glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), and forsterite (2MgO · SiO _2). ) And lead glass (Na ₂ O · PbO · SiO ₂ ). Alternatively, those having an insulating film formed on the surface of these glasses may be used, or those having an insulating film formed on the surface of quartz, silicon, metal, or the like may be used. Examples of the plastic substrate include polymethyl methacrylate (polymethyl methacrylate, PMMA), polyvinyl alcohol (PVA), polyvinyl phenol (PVP), polyethersulfone (PES), polyimide (PI), polycarbonate (PC), and polyethylene terephthalate. And organic polymers such as (PET). Note that the plastic substrate includes a flexible film or sheet.

  The TFT 12 corresponds to, for example, transistors 3A and 3B in the pixel circuit 40 described later, and the configuration thereof may be, for example, an inverted stagger structure (bottom gate structure) or a stagger structure (top gate structure).

The interlayer insulating films 12c and 14 are made of SiO ₂ inorganic material such as silicon oxide (SiO ₂ ), BPSG, PSG, BSG, AsSG, PbSG, SiON, SOG (spin on glass), low melting point glass, glass paste, SiN inorganic material. And a single layer film made of any of resin materials such as polyimide, or a laminated film made of two or more of them.

  The wiring layer 13 is made of a conductive metal. For example, the contact surface with the lower electrode 15 desirably has a metal having a low contact resistance with respect to the lower electrode 15 or such a metal oxide.

  The interlayer insulating film 14 is preferably made of a material having excellent flatness. As a constituent material of the interlayer insulating film 14, the same material as the interlayer insulating film 12c may be used, or a different insulating material may be used.

  In the organic EL element 10A, for example, a lower electrode 15, an organic layer 17 including a light emitting layer, a high resistance layer 18, and an upper electrode 19 are laminated in this order. The lower electrode 15 is electrically connected to the wiring layer 13 through a contact hole provided in the interlayer insulating film 14. In the element substrate 10, each of the plurality of organic EL elements 10 </ b> A is separated by an inter-pixel insulating film 16 formed on the interlayer insulating film 14. Specifically, an opening is formed in the inter-pixel insulating film 16 so as to face the lower electrode 15. In this opening, the lower electrode 15, the organic layer 17, the high resistance layer 18, and the upper electrode as described above are formed. 19 stacked structures are formed.

  The lower electrode 15 is provided for each organic EL element 10A. For example, platinum (Pt), gold (Au), silver (Ag), chromium (Cr), tungsten (W), nickel (Ni), copper can be used as the constituent material of the lower electrode 15 when it functions as an anode. A simple substance of a metal having a high work function such as (Cu), iron (Fe), cobalt (Co), tantalum (Ta), or an alloy of such a metal can be used. As the alloy, for example, an Ag—Pd—Cu alloy containing silver as a main component and containing 0.3 wt% to 1 wt% palladium (Pd) and 0.3 wt% to 1 wt% copper, or Al-Nd alloy can be mentioned. Alternatively, the lower electrode 15 may have a laminated structure of a metal film made of a single metal element or an alloy as described above and a transparent conductive film such as ITO. The lower electrode 15 is preferably made of a material having a high hole-injecting property, but an appropriate hole-injecting layer is provided even if it is a material other than that (such as aluminum (Al) or an alloy containing aluminum). Can be used as an anode. The thickness of the lower electrode 15 is, for example, 10 nm to 1000 nm. In the case of the bottom emission type, any of transparent conductive films such as indium and tin oxide (ITO), indium zinc oxide (IZO), and an alloy of zinc oxide (ZnO) and aluminum (Al) is used. It is comprised by the single layer film | membrane which consists of these, or the laminated film which consists of 2 or more types.

  The inter-pixel insulating film 16 is for ensuring insulation between the lower electrode 15 and the upper electrode 19 of the organic EL element 10A and partitioning (separating) each pixel region. The inter-pixel insulating film 16 is preferably made of an insulating material having a low water absorption rate in order to maintain the light emission luminance while preventing the deterioration of the organic layer 17 due to moisture, as well as being excellent in flatness. Alternatively, it is made of a novolac resin or the like. Depending on the opening arrangement of the inter-pixel insulating film 16, the arrangement of the plurality of organic EL elements 10A is, for example, a stripe arrangement, a diagonal arrangement, a delta arrangement, or a rectangle arrangement.

  The organic layer 17 includes at least an organic electroluminescent layer (hereinafter simply referred to as a light emitting layer). In the present embodiment, this light emitting layer (for example, a white light emitting layer) is formed as a common layer for all pixels. Thereby, the painting process for each pixel is omitted. Examples of the white light emitting layer include those obtained by laminating a blue light emitting layer and a yellow light emitting layer, and those obtained by laminating blue, green and red light emitting layers. The red light emitting layer includes, for example, at least one of a red light emitting material, a hole transporting material, and an electron transporting material, such as 4,4-bis (2,2-diphenylbinine) biphenyl (DPVBi). , 6-bis [(4′-methoxydiphenylamino) styryl] -1,5-dicyanonaphthalene (BSN). The green light emitting layer includes, for example, at least one of a green light emitting material, a hole transporting material, and an electron transporting material, and is composed of, for example, a mixture of ADN or DPVBi and coumarin 6. The blue light emitting layer includes, for example, at least one of a blue light emitting material, a hole transporting material, and an electron transporting material. For example, 4,4′-bis [2- {4- (N, N− Diphenylamino) phenyl} vinyl] biphenyl (DPAVBi) is mixed. In addition to such a light emitting layer, for example, a hole injection layer, a hole transport layer, an electron transport layer, and the like may be stacked on the organic layer 17. Further, between the electron transport layer and the upper electrode 19, for example, an oxide such as lithium (Li), cesium (Cs), calcium (Ca), barium (Ba), indium (In), or magnesium (Mg) or the like An electron injection layer made of a complex oxide may be provided. Furthermore, two or more tandem units may be stacked via a connection layer with these stacked structures as units (referred to as tandem units for convenience).

The high resistance layer 18 is made of a transparent and high electrical resistivity material such as niobium oxide (Nb ₂ O ₅ ), ITO or IZO between the organic layer 17 and the upper transparent electrode 19. By providing the high resistance layer 18, when a voltage is applied between the lower electrode 15 and the upper electrode 19, the occurrence of a short circuit between the electrodes due to, for example, foreign matter is suppressed, and defective pixels or Occurrence of a broken line can be prevented. The electrical resistivity of the high resistance layer 18 is preferably 1 × 10 ⁶ Ω · m to 1 × 10 ⁸ Ω · m, for example. However, the high resistance layer 18 may be provided as necessary, and the upper electrode 19 may be formed directly on the organic layer 17.

  The upper electrode 19 is electrically connected via the organic layer 17 and the high resistance layer 18 and is provided in common to the plurality of organic EL elements 10A. In the present embodiment, since it is a top emission type, the upper electrode 19 is made of a transparent conductive film. As the transparent conductive film, for example, a single-layer film made of indium and tin oxide (ITO), InZnO (indium zinc oxide), or an alloy of zinc oxide (ZnO) and aluminum (Al) or 2 It is a laminated film composed of seeds or more. The thickness of the upper electrode 19 is, for example, 10 nm to 500 nm. Here, since the transparent conductive film as described above has a high resistance, in order to suppress a normal voltage drop, it is necessary to reduce the sheet resistance by increasing the film thickness, which may impair the optical characteristics. On the other hand, in the present embodiment, as will be described later, since the voltage drop is suppressed by providing the conductive layer 24 on the counter substrate 20, the upper electrode 19 is thinned to obtain good optical characteristics. Can do.

(Sealing layer 30)
The sealing layer 30 seals the element substrate 10 and serves as an adhesive layer between the element substrate 10 and the counter substrate 20, and has the purpose of preventing moisture from entering the organic layer 17 from the outside, and mechanically. It is formed for the purpose of increasing the strength. The sealing layer 30 is made of, for example, an ultraviolet (UV) curable resin or a thermosetting resin. The sealing layer 30 includes a resin layer 310a provided as a dam material (outer wall) on the outer periphery of the substrate, and a resin layer 310b formed in a region surrounded by the resin layer 310 (both shown in FIG. 1). Not shown). Of these, the resin layer 310b facing the organic EL element 10A desirably has a transmittance of light emitted from the organic layer 17 of 80% or more. On the other hand, regarding the resin layer 310a as the dam material, the transmittance is not particularly limited, but it is important that the moisture transmittance is low. In FIG. 1, as the sealing layer 30, a portion corresponding to a part of the resin layer 310b is shown.

  The thickness of the sealing layer 30 is preferably 3 to 20 μm, for example. By setting the thickness to 20 μm or less, the distance between the organic EL element 10A and a color filter layer described later is appropriately maintained, and the luminance change and chromaticity change when the display surface is viewed obliquely and when viewed from the front are reduced. Suppressing and obtaining a good viewing angle characteristic. Moreover, by setting it as 3 micrometers or more, even if it is a case where a foreign material etc. are pinched | interposed at the time of sealing, generation | occurrence | production of the defect resulting from the foreign material pressing 10A of organic EL elements can be suppressed.

(Opposing substrate 20)
The counter substrate 20 has a CF / BM / OC layer 22 (organic) including a color filter (CF), a black matrix (BM), and an overcoat (OC) layer on one surface of the second substrate 21 (the surface on the element substrate 10 side). Material layer) is formed. On the CF / BM / OC layer 22, pillars 23 (conductive members) and a conductive layer 24A are disposed at predetermined positions. The CF / BM / OC layer 22, the pillars 23, and the conductive layer 24A are disposed on the CF / BM / OC layer 22. A conductive layer 24B is formed to cover it. In the present embodiment, a plurality of holes H (H1, H2) reaching the CF / BM / OC layer 22 provided in the lower layer are formed in the conductive layer 24A and the conductive layer 24B. The second substrate 21 is made of the same material as the constituent material of the first substrate 11 and may be made of the same material as the first substrate 11 or may be different. The two substrates 21 are made of a transparent material. Hereinafter, the configuration of each part of the counter substrate 20 will be described in detail.

  FIG. 2 illustrates a planar configuration of the counter substrate 20 as viewed from the sealing layer 30 side. 3A and 3B are enlarged views of the cross-sectional configuration of the counter substrate 20 taken along lines II and II-II in FIG. 2, respectively.

  A light shielding layer 221 is provided on one surface of the counter substrate 20 as a black matrix, and the light shielding layer 221 is provided with an opening A1 penetrating the light shielding layer 221 so as to face each organic EL element 10A. Yes. In each opening A1, a red resin layer 220R, a green resin layer 220G, and a blue resin layer 220B constituting a color filter are formed so as to be embedded therein. Specifically, in the present embodiment, as described above, the four pixels R, G, B, and W are configured as one pixel, and therefore, for example, four pixels are arranged in a 2 × 2 array. A red resin layer 220R, a green resin layer 220G, and a blue resin layer 220B are formed in any one of the two openings A1. In addition, although it is not necessary to provide a color filter for the W pixel, a transmittance control filter for luminance adjustment may be provided as necessary.

  Each of the red resin layer 220R, the green resin layer 220G, and the blue resin layer 220B is a color filter that selectively transmits light in a specific wavelength range (absorbs light of other wavelengths). Thereby, in each pixel, the white light emitted from the organic layer 17 can be emitted as one of R, G, and B color lights. However, in the W pixel (high luminance pixel), the white light emitted from the organic layer 17 is extracted as white light as it is without being absorbed by the color filter. Such a red resin layer 220R, a green resin layer 220G, and a blue resin layer 220B are obtained by mixing a dye or a pigment in a photosensitive resin, for example. Further, the thickness of each layer may be appropriately set according to the required chromaticity and the like, and is, for example, 0.1 μm to 5 μm.

  The light shielding layer 221 is, for example, a mixture of a black pigment or the like in a photosensitive resin. An overcoat layer 222 (protective layer) is formed over the entire surface of the second substrate 21 so as to cover the resin light shielding layer 221D and the color filter layer. The overcoat layer 222 has a function of protecting the color filter layer, and is formed of an organic material such as an acrylic resin.

  As described above, the CF / BM / OC layer 22 is provided on one surface of the counter substrate 20, and the conductive layer 24 is provided on the CF / BM / OC layer 22. A part of the conductive layer 24 has a multilayer structure, and includes, for example, a patterned conductive layer 24A and a conductive layer 24B provided over the entire surface of the second substrate 21.

  The conductive layer 24A functions as an auxiliary electrode of the upper electrode 19, that is, is made of a material and a film thickness that have a lower electrical resistivity than the upper electrode 19 (transparent conductive film). The conductive layer 24 </ b> A is formed at a predetermined position, and has a pattern shape similar to that of the light shielding layer 221, for example. Specifically, as shown in FIG. 2, it is formed in a lattice shape so as to surround each pixel. In addition, for example, it may be formed in a strip shape extending in the X-axis direction.

  For example, when the lower electrode 15 is an anode and the upper electrode 19 is a cathode, the conductive layer 24A is connected to, for example, a cathode contact portion provided in a peripheral region of the pixel portion. Thereby, the current extracted from the upper electrode 19 side returns to the power source on the element substrate 10 side via the conductive layer 24A and the cathode contact portion. Even when the lower electrode 15 is a cathode, it is electrically equivalent by forming an anode contact portion around the pixel portion.

  The conductive layer 24A is preferably made of a material that is highly conductive and hardly oxidizes in the air. Specifically, for example, aluminum (Al), silver (Ag), gold (Au), copper (Cu), chromium (Cr), zinc (Zn), iron (Fe), tungsten (W) and cobalt (Co) ) And the like, or alloys of such metals. Since aluminum is relatively easy to oxidize, it is preferable to cover the surface with molybdenum (Mo) or titanium (Ti).

  The thickness of the conductive layer 24A may be appropriately set according to the characteristics of the organic EL display device in order to sufficiently suppress the voltage drop, but is preferably about 100 nm to 1000 nm. 100 nm or more is preferable when considering the conductive characteristics, and 1000 nm or less is preferable when considering the load of the film forming process.

  As an example of such a conductive layer 24A, for example, a two-layer laminated film of Al (300 nm) / Mo (50 nm) in order from the second substrate 21 side can be given. In addition, a three-layer laminated film of Mo (50 nm) / Al (300 nm) / Mo (50 nm) may be used, or a single layer film of Ag alloy (300 nm) may be used.

  The conductive layer 24B is made of a transparent conductive film such as ITO, and has a thickness of 10 nm to 5000 nm, for example. Here, the conductive layer 24B is provided not only on the surface of the pillar 23 but also over the entire display area 50 where the red resin layer 220R, the green resin layer 220G, the blue resin layer 220B, and the like are provided. For this reason, although it is preferable that the conductive layer 24B has transparency, it does not necessarily need to have transparency.

  In the present embodiment, the conductive layer 24 (24A, 24B) includes a plurality of holes H that penetrate the conductive layer 24 and reach the CF / BM / OC layer 22 as shown in FIGS. 2 and 3A, 3B. Is provided. The hole H has a degree that the electric resistance of the conductive layer 24 (particularly the conductive layer 24A) as the auxiliary wiring does not increase, for example, the entire surface of the conductive layer 24, for example, 50% of the region where the conductive layer 24 is formed. It is preferable that they are uniformly provided at a ratio of about. In the present embodiment, a plurality of holes H2A are uniformly formed in the conductive layer 24A provided in a lattice shape as shown in FIG. In the conductive layer 24B provided on the entire surface of the second substrate 21, a hole (hole H1) substantially the same as the opening of the pixel is formed as shown in FIG. Note that since the conductive layer 24A is not formed in the opening (opening A3) of the pixel, the CF / BM / is formed on the pixel by the hole H1 formed in the conductive layer 24A as shown in FIG. 3A. The OC layer 22 is exposed. Further, in the conductive layer 24B, a hole (hole H2B) is formed at the same position as the hole H2A formed in the conductive layer 24A. Thus, as shown in FIG. A hole 2 penetrating to the CF / BM / OC layer 22 is formed. It should be noted that the hole H2 does not necessarily need to completely match the hole H2A formed in the conductive layer 24A and the hole H2B formed in the conductive layer 24B, and at least one of the holes H2A and H2B. It is only necessary that the portions overlap and penetrate to the CF / BM / OC layer 22. In this way, by forming these hole portions H in the conductive layer 24, a part of the CF / BM / OC layer 22 is exposed and included in the CF / BM / OC layer 22 from the hole portions H in the baking process described later. Moisture and the like can be removed.

  The pillar 23 functions as a spacer between the element substrate 10 and the counter substrate 20 and is a member for electrically connecting the conductive layer 24 </ b> A and the upper electrode 19 of the element substrate 10, as will be described in detail later. For this reason, the pillar 23 is preferably made of a conductive material, but may be made of an insulating material. For example, the pillar 23 is formed on the conductive layer 24A using a photosensitive resin such as a photoresist, and the surface thereof is covered with the conductive layer 24B.

  A plurality of pillars 23 are disposed in the surface of the counter substrate 20, for example, between pixels adjacent in the Y direction as shown in FIG. For this reason, it is desirable to have elasticity more than the extent which can absorb the dispersion | variation in the height of the some pillar 23. FIG. If the height of the pillar 23 varies, the first contact portion with the upper electrode 19 (relatively high pillar 23) at the time of sealing and the later contact portion (relatively low pillar 23) in time. Arise. If the pillars 23 have sufficient elasticity, the pillars 23 having a height can be contracted by elastic deformation and contacted, and the cell gap can be defined in accordance with the height of the low pillars 23. Even when the height of the pillars 23 varies, the entire substrate can be contacted. Furthermore, since the pillar 23 has elasticity, it is possible to suppress the occurrence of cracks caused by the variation in height.

(Electric connection between upper electrode 19 and conductive layer 24A)
In the present embodiment, as described above, the light shielding film 221, the color filter 220, and the overcoat layer 222 are formed in this order on the second substrate, and a conductive layer as an auxiliary electrode is formed on the overcoat layer 222. 24A is locally formed. On the conductive layer 24A, pillars 23 projecting toward the element substrate 10 are provided, and the entire surface of the second substrate 21 including the pillars 23 and the conductive layer 24A is covered with the conductive layer 24B. At the tip of the pillar 23, the conductive layer 24B and the upper electrode 19 of the element substrate 10 are in contact with each other. By this. The upper electrode 10 and the conductive layer 24A (auxiliary electrode) are electrically connected via the pillar 23 and the conductive layer 24B.

  In this way, when the electrical connection between the upper electrode 19 and the conductive layer 24A is secured using the pillar 23, the pillar 23 is formed in advance on the counter substrate 20 side, so that the connection position is clearly defined. Can do.

[Production method]
The organic EL display device 1 as described above can be manufactured, for example, as follows. 4 to 12 show the manufacturing process of the organic EL display device 1.

(Preparation of element substrate 10)
First, the element substrate 10 is produced. Specifically, as shown in FIG. 4A, the gate electrode 12a, the gate insulating film 12b, the interlayer insulating film 12c, and the like are sequentially formed on the first substrate 11 by a known thin film forming process, so that the TFT 12 is formed. After the formation, a wiring layer 13 that conducts to the TFT 12 is formed.

  Subsequently, as shown in FIG. 4B, an interlayer insulating film 14 is formed. Specifically, first, the interlayer insulating film 14 made of the above-described material is formed over the entire surface of the substrate using, for example, a CVD method, a coating method, a sputtering method, or various printing methods. Thereafter, a contact hole A2 is formed in a region facing the wiring layer 13 of the interlayer insulating film 14 by etching using, for example, a photolithography method.

  Next, as shown in FIG. 5A, the lower electrode 15 is formed. That is, first, the lower electrode 15 made of the above-described material is formed on the interlayer insulating film 14 by, for example, a sputtering method so as to fill the contact hole A2. Thereafter, the deposited lower electrode 15 is patterned into a predetermined shape and separated for each pixel by etching using, for example, a photolithography method.

  Subsequently, as shown in FIG. 5B, an inter-pixel insulating film 16 is formed. That is, first, after the inter-pixel insulating film 16 made of the above-described material is formed over the entire surface of the substrate, the opening A3 is formed in a region corresponding to the lower electrode 15. At this time, when a photosensitive resin is used as the inter-pixel insulating film 16, the opening A3 can be formed by exposure using a photomask after film formation. Further, after the opening A3 is formed, reflow may be performed as necessary. This opening A3 becomes a so-called light emitting region (pixel opening) of each pixel.

  Next, as shown in FIG. 6A, the organic layer 17 is formed. In this embodiment, as described above, since a common light emitting layer (for example, a white light emitting layer) is formed in each pixel, for example, red, green, and blue light emitting materials are spread over the entire surface of the substrate by, for example, vacuum deposition. Films are sequentially formed. Alternatively, as a method for forming the organic layer 17, in addition to the vacuum deposition method, a printing method such as a screen printing method or an ink jet printing method and a coating method may be used. In addition, a laminate of a laser light absorption layer and an organic layer is formed on the transfer substrate, and the organic layer is separated from the transfer substrate by transferring the laser to the transfer substrate, and transferred. A laser transfer method may be used. In addition to the light emitting layer described above, when the hole transport layer, the electron transport layer, or the like is formed as the organic layer 17, it is desirable that all layers are formed by a vacuum consistent process with the light emitting layer.

  Subsequently, as shown in FIG. 6B, the high resistance layer 18 made of the above-described material is formed over the entire surface of the organic layer 17 by, for example, sputtering, vapor deposition, CVD, or the like.

  Next, as shown in FIG. 7, the upper electrode 19 made of the above-described transparent conductive film is formed over the entire surface of the substrate by, for example, sputtering. In this way, the element substrate 10 is formed.

(Preparation of counter substrate 20)
On the other hand, the counter substrate 20 is manufactured as follows, for example. 8 to 10 show a manufacturing process of the counter substrate 20.

  Specifically, first, as shown in FIG. 8, the light shielding layer 221 and the color filter layer are respectively patterned on the second substrate 21. Next, as shown in FIG. 9, the overcoat layer 222 is formed by, for example, a slit coater method or a sputtering method so as to cover the light shielding layer 221 and the color filter 220.

  Subsequently, as shown in FIG. 10, a low-resistance material constituting the conductive layer 24A described above is formed on the overcoat layer 222 by, for example, a sputtering method, and then patterned by, for example, etching using a photolithography method. Thus, the conductive layer 24A is formed. At this time, the hole H2A is formed together with the hole H1 in the pixel portion.

  Next, as shown in FIG. 11, pillars 23 are formed in selective regions on the conductive layer 24A. As the pillar 23, for example, a photosensitive acrylic resin used for a photo spacer or the like can be used, and the photosensitive resin is formed by exposing such a photosensitive resin using a photomask. Thereafter, the conductive layer 24B is formed over the entire surface of the substrate, for example, by sputtering. At this time, the conductive layer 24A and the conductive layer 24B formed on the surface of the pillar 23 are electrically connected.

  Subsequently, the holes H2B and H1 in a state of reaching the color filter 220 at both the same position as the hole H2A formed by the conductive layer 24A and the opening A3 of the pixel in the display region are formed on the conductive layer 24B. It is formed by patterning in the lithography process. Here, as shown in FIG. 2 and FIG. 3B, in the conductive layer 24B, a rectangular hole of, for example, 5 μm × 5 μm having the same size as the hole formed in the conductive layer 24A is formed in the width direction and the length direction. Each of them is formed with an interval of 10 μm. In addition, an area corresponding to the opening A3 of the pixel is formed on a rectangle in accordance with the size of the opening. In this way, the region corresponding to the non-opening portion of the pixel, the hole portion H2 that penetrates both the conductive layer 24A and the conductive layer 24B, and the hole portion H1 that penetrates the conductive layer 24B in the region corresponding to the opening portion A3 are formed. As a result, the CF / BM / OC layer 22 is exposed on the surface of each of the holes H1 and H2.

  Next, the counter substrate 20 is subjected to spin cleaning with pure water in order to remove minute foreign substances, and then subjected to a baking process. At this time, moisture remaining in the CF / BM / OC layer 22 is removed through the hole formed in the conductive film. For example, moisture in the CF / BM / OC layer 22 is reliably removed by baking at 150 ° C. for 30 minutes.

  The holes H1 and H2 formed in the conductive layer 24A and the conductive layer 24B preferably have a large opening. However, if the area on the conductive layer 24A is reduced, the resistance decreases, so the ratio is about 50%. It is better to be formed with. In addition, it is easier to remove moisture and the like from the CF / BM / OC layer 22 if the holes H1 and H2 are arranged evenly. The shape of the holes H1 and H2 is rectangular here, but it may be circular or linear.

  In addition, although the patterning of the normal lithography process was used as a formation method of the holes H1 and H2 of the conductive layer 24, it is not limited to this method. For example, the conductive layer 24 is formed by a method such as laser ablation. It is also possible to remove it.

(Lamination (sealing) process)
Next, the element substrate 10 and the counter substrate 20 manufactured as described above are bonded to each other through the sealing layer 30. At this time, for example, it is preferable to use a film forming technique called an ODF (One Drop Fill) method. The ODF method is a method in which a plurality of resin droplets (resin drops) are arranged at equal intervals on the element substrate 10 (or the counter substrate 20), and both substrates are pressure-bonded in a vacuum. Thereafter, the resin droplets are filled between the substrates by the pressure (atmospheric pressure) applied to the substrates by opening to the atmosphere. After filling the resin in this way, the resin is cured.

  Specifically, first, as shown in FIG. 12A, the element substrate 10 and the counter substrate 20 are arranged to face each other between the plates 280A and 280B in the vacuum chamber, and the sealing layer is formed on the element substrate 10, for example. 30, after the resin layer 310a (dam material) is applied along the outer periphery of the element substrate 10a, the resin layer 310b, for example, a resin material is dropped at a plurality of locations at equal intervals in the region surrounded by the resin layer 310a. To do. Here, the resin layers 310a and 310b are in a liquid or gel state before being cured, but the resin layer 310a is made of a material having a relatively high viscosity, and the resin layer 310b is made of a material having a low viscosity.

  Subsequently, as shown in FIG. 12B, the element substrate 10 and the counter substrate 20 are mechanically pressure-bonded using the plates 280A and 280B. Thereby, in the region between the element substrate 10 and the counter substrate 20, the resin layer 310b spreads in the region surrounded by the resin layer 310a.

  Thereafter, as shown in FIG. 12C, when the element substrate 10 and the counter substrate 20 are taken out from the chamber and exposed to the atmosphere, the element substrate 10 and the counter substrate 20 are further pressurized by the atmospheric pressure, and the gap between the substrates is increased. Is filled with the resin layers 310a and 310b. Finally, the sealing layers 30 are formed by curing the resin layers 310a and 310b. Thus, the organic EL display device 1 shown in FIG. 1 is completed.

  As the resin layers 310a and 310b, a thermosetting resin or a photocuring resin may be used. In the case of the photocuring resin, a resin that cures at a wavelength that transmits the color filter layer is used. Alternatively, a light delay type curable resin may be used. In this case, light irradiation is performed in advance before pressure bonding, and the resin is filled between the substrates as described above before the resin is completely cured. Then, light irradiation is performed again to completely cure the resin.

[Action / Effect]
In the organic EL display device 1, in each pixel, predetermined driving is performed on the organic layer 17 through the lower electrode 15 and the upper electrode 19 for each pixel (organic EL element 10 </ b> A) according to a scanning signal or the like supplied from a driving circuit (not shown). Current is injected. Thereby, in the light emitting layer of the organic layer 17, light emission occurs due to recombination of holes and electrons. Light (white light) generated from the organic layer 17 is extracted as display light by passing through the high resistance layer 18, the upper electrode 19, the sealing layer 30 and the counter substrate 20. When passing through the counter substrate 20, the light passes through the color filter layer (opening portion H <b> 1 in the W pixel) corresponding to each pixel, and is extracted as one of R, G, B, and W color light.

  Thus, in the top emission type organic EL display device 1, the color filter layer is formed on the counter substrate 20, the white light emitted from the organic layer 17 is extracted from the upper electrode 19 side, and is transmitted through the color filter layer. By doing so, color display is realized. For this reason, it is necessary to use a high-resistance transparent conductive film as the upper electrode 19, but it is difficult to increase the thickness of the upper electrode 19 from an optical viewpoint. When the thickness of the upper electrode 19 is reduced, the resistance increases accordingly, and a voltage drop occurs. Also, as described above, with the increase in size and definition, the variation in wiring resistance for each region in the pixel portion cannot be ignored, resulting in variation in in-plane luminance due to voltage drop.

  Therefore, as described above, there is a method for suppressing the voltage drop of the upper electrode by electrically connecting the upper electrode to the auxiliary electrode made of low-resistance metal on the opposite substrate side and the transparent conductive film covering the surface of the pillar. Conceivable. However, a layer (organic material layer) made of an organic material such as a color filter layer is formed on the counter substrate side, and the transparent conductive film is formed so as to cover these organic material layers. It becomes difficult to remove moisture and the like contained in the water. Moisture or the like contained in the organic material layer gradually penetrates into the organic EL element through the sealing layer after the display device is assembled, and causes problems such as non-light emitting defects and a decrease in light emission lifetime. In addition, moisture and the like in the organic material layer can be removed by baking for a long time at a high temperature or in a vacuum, but there is a problem that productivity is lowered.

  In contrast, in the present embodiment, CF / BM / is applied to the conductive layer 24 (24A, 24B) provided on the CF / BM / OC layer 22 corresponding to the organic material layer provided on the counter substrate 20. Holes H (H1, H2) reaching the OC layer 22 were formed. FIG. 13 relatively represents the moisture content of the counter substrate in each configuration and each baking condition with reference to the case where the counter substrate is composed only of glass. Table 1 summarizes each configuration, each baking condition, and the moisture content (moisture content) contained in the counter substrate. The following can be understood from FIG. 13 and Table 1. First, when comparing Condition 2 and Condition 3, moisture contained in the color filter is removed even if baking is performed under the same conditions by providing an auxiliary wiring made of a metal material on a color filter (CF) made of an organic material. The amount of water contained in the counter substrate was greatly increased. When this condition 3 is compared with conditions 4 to 6, the baking conditions are increased (specifically, the heating condition is changed from 150 ° C. to 190 ° C. (condition 4), and the treatment time is further changed from 30 minutes to 120 minutes (conditions 5) Further, in a vacuum (Condition 6)) The amount of water contained in the counter substrate decreased. On the other hand, in condition 7 in which the hole (hole H) is formed in the auxiliary wiring (conductive layer 24), which is the present embodiment, the same bake treatment as in conditions 2 and 3 is included in the counter substrate. The amount of water produced could be reduced to a value of 6 or less. Thus, by forming the hole H (H1, H2) reaching the CF / BM / OC layer 22 in the conductive layer 24 (24A, 24B) provided on the CF / BM / OC layer 22, the low temperature short It is possible to remove moisture and the like contained in the CF / BM / OC layer 22 by baking under mild conditions such as time (for example, 150 ° C. for 30 minutes).

  As described above, in the present embodiment, the holes reaching the CF / BM / OC layer 22 in the conductive layer 24 (24A, 24B) provided on the CF / BM / OC layer 22 including the layer made of an organic material. Part H (H1, H2) was formed. Accordingly, it is possible to remove moisture and the like in the CF / BM / OC layer 22 by a simpler method, and it is possible to prevent non-luminous defects and shortened emission lifetime due to moisture intrusion into the organic EL element. . That is, it is possible to provide a display device having high reliability.

  In addition, the removal of moisture and the like contained in the CF / BM / OC layer 22 can be performed under the above-described mild conditions, so that productivity is improved.

  Furthermore, in this embodiment, since the hole H1 is formed in the conductive layer 24B made of a transparent conductive material in accordance with the opening A3 of the pixel, the light absorption of the conductive layer 24B is improved and the light emission efficiency is improved. To rise. Thereby, power consumption can be reduced.

  Furthermore, in this embodiment, by forming the overcoat layer 222 on the color filter 220 and the light shielding layer 221, the color filter 220 and the light shielding layer 221 are protected from an etching solution or the like used when patterning the conductive layer 24. , These damages can be suppressed.

<2. Overall configuration of display device, pixel circuit configuration>
The overall configuration and pixel circuit configuration of the organic EL display device (hereinafter simply referred to as a display device) according to the above-described embodiment and the like will be described. FIG. 14 shows an overall configuration including peripheral circuits of a display device used as an organic EL display. Thus, for example, a display region 50 in which a plurality of pixels PXLC including organic EL elements are arranged in a matrix is formed on the substrate 11, and a horizontal line as a signal line driving circuit is formed around the display region 50. A selector (HSEL) 51, a write scanner (WSCN) 52 as a scanning line drive circuit, and a power supply scanner (DSCN) 53 as a power supply line drive circuit are provided.

  In the display area 50, a plurality of (integer n) signal lines DTL1 to DTLn are arranged in the column direction, and a plurality (integer m) scanning lines WSL1 to WSLm and power supply lines DSL1 to DSLm are respectively arranged in the row direction. Is arranged. In addition, each pixel PXLC (any one of pixels corresponding to R, G, B, and W) is provided at the intersection of each signal line DTL and each scanning line WSL. Each signal line DTL is connected to a horizontal selector 51, and a video signal is supplied from the horizontal selector 51 to each signal line DTL. Each scanning line WSL is connected to a write scanner 52, and a scanning signal (selection pulse) is supplied from the write scanner 52 to each scanning line WSL. Each power supply line DSL is connected to a power supply scanner 53, and a power supply signal (control pulse) is supplied from the power supply scanner 53 to each power supply line DSL.

  FIG. 15 illustrates a specific circuit configuration example in the pixel PXLC. Each pixel PXLC has a pixel circuit 40 including an organic EL element 5D. The pixel circuit 40 is an active driving circuit having a sampling transistor 3A and a driving transistor 3B, a storage capacitor element 3C, and an organic EL element 3D. Among these, the transistor 3A (or transistor 3B) corresponds to the TFT 12 in the above-described embodiment, and the organic EL element 3D corresponds to the organic EL element 10A in the above-described embodiment.

  Sampling transistor 3A has its gate connected to corresponding scanning line WSL, one of its source and drain connected to corresponding signal line DTL, and the other connected to the gate of driving transistor 3B. The drive transistor 3B has a drain connected to the corresponding power supply line DSL and a source connected to the anode of the organic EL element 3D. The cathode of the organic EL element 3D is connected to the ground wiring 3H. The ground wiring 3H is wired in common to all the pixels PXLC. The storage capacitor element 3C is disposed between the source and gate of the driving transistor 3B.

  The sampling transistor 3A conducts according to the scanning signal (selection pulse) supplied from the scanning line WSL, thereby sampling the signal potential of the video signal supplied from the signal line DTL and holding it in the storage capacitor element 3C. Is. The driving transistor 3B is supplied with a current from a power supply line DSL set to a predetermined first potential (not shown), and changes the driving current to an organic EL element according to the signal potential held in the holding capacitor element 3C. Supply to 3D. The organic EL element 3D emits light with a luminance corresponding to the signal potential of the video signal by the driving current supplied from the driving transistor 3B.

  In such a circuit configuration, the sampling transistor 3A is turned on according to the scanning signal (selection pulse) supplied from the scanning line WSL, whereby the signal potential of the video signal supplied from the signal line DTL is sampled and held. It is held in the capacitive element 3C. In addition, a current is supplied from the power supply line DSL set to the first potential to the driving transistor 3B, and the driving current is changed to the organic EL element 3D (red, green and red) according to the signal potential held in the holding capacitor element 3C. To each blue organic EL element). Each organic EL element 3D emits light with a luminance corresponding to the signal potential of the video signal by the supplied drive current. Thereby, video display based on the video signal is performed on the display device.

<3. Application example>
Hereinafter, application examples of the organic EL display device (hereinafter referred to as a display device) such as the above-described embodiment to an electronic device will be described. Examples of the electronic device include a television device, a digital camera, a notebook personal computer, a mobile terminal device such as a mobile phone, or a video camera. In other words, the display device can be applied to electronic devices in various fields that display a video signal input from the outside or a video signal generated inside as an image or video.

(module)
The display device is incorporated into various electronic devices such as application example 1 described later, for example, as a module shown in FIG. In this module, for example, a region 210 exposed from the second substrate 21 is provided on one side of the first substrate 11, and the wiring of the horizontal selector 51, the light scanner 52 and the power scanner 53 is extended to the exposed region 210. External connection terminals (not shown) are formed. The external connection terminal may be provided with a flexible printed circuit (FPC) 220 for signal input / output.

(Application example 1)
FIG. 17 illustrates the appearance of a television device. This television apparatus has, for example, a video display screen unit 300 including a front panel 310 and a filter glass 320, and the video display screen unit 300 corresponds to the display device.

  While the present disclosure has been described with the embodiment and application examples, the present disclosure is not limited to the embodiment and the like, and various modifications can be made. For example, the material and thickness of each layer described in the above embodiment and the like, or the film formation method and film formation conditions are not limited, and other materials and thicknesses may be used. It is good also as film | membrane conditions. For example, in the above embodiment, the light shielding film 221 is formed using a resin material, but may be formed as a multilayer film made of an inorganic material, for example.

  Further, in the above-described embodiment and the like, as an example of the organic EL display device, an example of performing color display using four pixels of R, G, B, and W is exemplified. However, the device using such four pixels is not necessarily used. It may not be, and it may be one using three pixels of R, G and B. The present disclosure can be applied as long as the counter substrate has a resin layer such as a color filter layer or a light shielding layer.

  Furthermore, in the above-described embodiment and the like, the configuration of the organic EL element 10A has been specifically described, but it is not necessary to include all layers, and other layers may be further included. In the above-described embodiment and the like, the light emitting layer in the organic layer 17 is formed in common for each pixel. However, the light emitting layer may be separated for each pixel, or each color of R, G, B for each pixel. Any of the light emitting layers may be provided.

  In addition, in the above-described embodiment and the like, the case of an active matrix display device has been described, but the present disclosure can also be applied to a passive matrix display device. Furthermore, the configuration of the pixel driving circuit for active matrix driving is not limited to that described in the above embodiment, and a capacitor or a transistor may be added as necessary. In that case, a necessary driving circuit may be added in addition to the signal line driving circuit 120 and the scanning line driving circuit 130 described above in accordance with the change of the pixel driving circuit.

  In the above-described embodiment and the like, the top emission type organic EL display device has been described as an example. However, the organic EL display device of the present disclosure can also be applied to a bottom emission type organic EL display device. In particular, the present invention can be suitably applied when the upper electrode is made of a high-resistance conductive film such as a transparent conductive film.

  In addition, the effect described in this specification is an illustration to the last, and is not limited, Moreover, there may exist another effect.

In addition, this indication can also take the following structures.
(1)
An element substrate having a first electrode, an organic layer including a light emitting layer, and a second electrode in this order on the first substrate;
A counter substrate disposed opposite to the element substrate and having a conductive layer on an organic material layer provided on the element substrate side of a second substrate;
The organic EL display device, wherein the conductive layer has a hole reaching at least one organic material layer.
(2)
Each having a display area in which a plurality of pixels each having a light-emitting element are disposed, and the holes are respectively provided at positions corresponding to the plurality of pixels in the display area;
The organic EL display device according to (1) above.
(3)
Each having a display area in which a plurality of pixels each having a light emitting element are arranged, and the hole is provided between the plurality of pixels in the display area;
The organic EL display device according to (1) or (2).
(4)
A plurality of the hole portions provided between the pixels are provided over the entire surface of the display region;
The organic EL display device according to (3) above.
(5)
The conductive layer is a laminate of a plurality of inorganic films.
The organic EL display device according to any one of (1) to (4) above.
(6)
The conductive layer includes a first conductive layer covering the entire surface of the second substrate and a second conductive layer disposed on at least a part of the second substrate.
The organic EL display device according to any one of (1) to (5) above.
(7)
A conductive member is disposed between the second conductive layer and the second electrode, and the conductive member is covered with the first conductive layer.
The organic EL display device according to (6) above.
(8)
The conductive member is a columnar member having at least a surface having conductivity.
The organic EL display device according to (7) above.
(9)
The organic material layer includes a light shielding layer, a color filter having a plurality of color elements, and an overcoat.
The organic EL display device according to any one of (1) to (8).
(10)
Forming an element substrate having a first electrode, an organic layer including a light emitting layer, and a second electrode in this order on the first substrate;
Forming a counter substrate having an organic material layer and a conductive layer in this order on the second substrate;
Forming at least one or more holes reaching the organic material layer in the conductive layer;
And a step of arranging the element substrate and the counter substrate so as to face each other and bonding them together.
(11)
After forming the hole, the counter substrate is baked.
The manufacturing method of the organic electroluminescence display as described in said (10).
(12)
Bonding the element substrate and the counter substrate through a sealing layer,
The manufacturing method of the organic electroluminescence display as described in said (10).
(13)
With an organic EL display,
The organic EL display device
An element substrate having a first electrode, an organic layer including a light emitting layer, and a second electrode in this order on the first substrate;
A counter substrate disposed opposite to the element substrate and having a conductive layer on an organic material layer provided on the element substrate side of a second substrate;
The electronic device has a hole that reaches at least one of the organic material layers.

  DESCRIPTION OF SYMBOLS 1 ... Organic EL display apparatus, 10 ... Element board | substrate, 10A ... Organic EL element, 11 ... 1st board | substrate, 12 ... TFT, 13 ... Wiring layer, 14 ... Interlayer insulating film, 15 ... Lower electrode, 16 ... Insulating film between pixels , 17 ... Organic layer, 18 ... High resistance layer, 19 ... Upper electrode, 20 ... Counter substrate, 21 ... Second substrate, 22 ... CF / BM / OC layer, 23 ... Pillar, 24 ... Conductive film, 30 ... Sealing Layer, 220R ... red resin layer, 220G ... green resin layer, 220B ... blue resin layer, 221 ... light shielding layer, 222 ... overcoat layer.

Claims (13)

An element substrate having a first electrode, an organic layer including a light emitting layer, and a second electrode in this order on the first substrate;
A counter substrate disposed opposite to the element substrate and having a conductive layer on an organic material layer provided on the element substrate side of a second substrate;
The organic EL display device, wherein the conductive layer has a hole reaching at least one organic material layer.   2. The organic EL according to claim 1, further comprising: a display region in which a plurality of pixels each having a light emitting element are disposed, wherein the hole portion is provided at a position corresponding to the plurality of pixels in the display region. Display device.   2. The organic EL display device according to claim 1, further comprising: a display area in which a plurality of pixels each having a light emitting element are disposed, wherein the hole is provided between the plurality of pixels in the display area.   The organic EL display device according to claim 3, wherein a plurality of the hole portions provided between the pixels are provided over the entire surface of the display region.   The organic EL display device according to claim 1, wherein the conductive layer is a laminate of a plurality of inorganic films.   2. The organic EL display device according to claim 1, wherein the conductive layer includes a first conductive layer covering the entire surface of the second substrate and a second conductive layer disposed on at least a part of the second substrate.   The organic EL display device according to claim 6, wherein a conductive member is disposed between the second conductive layer and the second electrode, and the conductive member is covered with the first conductive layer. .   The organic EL display device according to claim 7, wherein the conductive member is a columnar member having at least a surface having conductivity.   The organic EL display device according to claim 1, wherein the organic material layer includes a light shielding layer, a color filter having a plurality of color elements, and an overcoat. Forming an element substrate having a first electrode, an organic layer including a light emitting layer, and a second electrode in this order on the first substrate;
Forming a counter substrate having an organic material layer and a conductive layer in this order on the second substrate;
Forming at least one or more holes reaching the organic material layer in the conductive layer;
And a step of arranging the element substrate and the counter substrate so as to face each other and bonding them together.   The method of manufacturing an organic EL display device according to claim 10, wherein the counter substrate is baked after forming the hole.   The method for manufacturing an organic EL display device according to claim 10, wherein the element substrate and the counter substrate are bonded together through a sealing layer. With an organic EL display,
The organic EL display device
An element substrate having a first electrode, an organic layer including a light emitting layer, and a second electrode in this order on the first substrate;
A counter substrate disposed opposite to the element substrate and having a conductive layer on an organic material layer provided on the element substrate side of a second substrate;
The electronic device has a hole that reaches at least one of the organic material layers.

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