JP2015189001A - 終点検出ウィンドウを有する化学機械研磨パッド - Google Patents
終点検出ウィンドウを有する化学機械研磨パッド Download PDFInfo
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- JP2015189001A JP2015189001A JP2015066480A JP2015066480A JP2015189001A JP 2015189001 A JP2015189001 A JP 2015189001A JP 2015066480 A JP2015066480 A JP 2015066480A JP 2015066480 A JP2015066480 A JP 2015066480A JP 2015189001 A JP2015189001 A JP 2015189001A
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- chemical mechanical
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- polishing pad
- mechanical polishing
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/12—Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】研磨面を有する研磨層、及び、終点検出ウィンドウを含み、終点検出ウィンドウが、2〜6.5重量%の未反応NCO基を有するイソシアネート末端ウレタンプレポリマーと、二官能硬化剤少なくとも5重量%、1分子あたり少なくとも1個の窒素原子を有し、1分子あたり平均少なくとも3個のヒドロキシル基を有するアミン開始ポリオール硬化剤少なくとも5重量%、及び、2,000〜100,000の数平均分子量MNを有し、1分子あたり平均3〜10個のヒドロキシル基を有する高分子量ポリオール硬化剤25〜90重量%を含む硬化剤系とを含む成分の反応生成物を含む、化学機械研磨パッド。
【選択図】なし
Description
本発明の化学機械研磨パッドは、他に類のない成分のセットの反応生成物を含む終点検出ウィンドウを有し、その反応生成物は、低欠陥研磨性能を提供するための低い硬度(すなわち≦50のショアD)及び低い引張り伸び(すなわち≦400%の破断点伸び)と、研磨終点検出を容易にするための良好な光学的性質(すなわち≧30%の800nmでのダブルパス透過率DPT800)との他に類のない組み合わせを示し、終点検出ウィンドウ組成は、望まれないウィンドウ変形(すなわち過度な膨らみ)を示さず、厳しい研磨用途に求められる耐久性を有する。
DPT=(IWSi−IWD)÷(IASi−IAD)
式中、IWSi、IWD、IASi及びIADは、SD1024F分光器、キセノン閃光ランプ及び3mm光ファイバケーブルを含むVerity SP2006スペクトル干渉計を使用して、3mm光ファイバケーブルの発光面を原点とし終点検出ウィンドウの第一面に対して(垂直方向に)配置し、光をウィンドウの厚さTWを通して向け、第一の面に対して実質的に平行な終点検出ウィンドウの第二の面に対して配置された面から反射してウィンドウの厚さTWを反対に通過する光の強さを原点で計測することによって計測され、IWSiは、原点からウィンドウを通過し、ウィンドウの第二の面に対して配置されたシリコンブランケットウェーハの表面から反射してウィンドウを反対に通過して原点に達する光の強さの計測値であり、IWDは、原点からウィンドウを通過し、黒体の表面から反射してウィンドウを反対に通過して原点に達する光の強さの計測値であり、IASiは、原点から終点検出ウィンドウの厚さTwに等しい空気の厚さを通過し、3mm光ファイバケーブルの発光面に対して垂直方向に配置されたシリコンブランケットウェーハの表面から反射して空気の厚さを反対に通過して原点に達する光の強さの計測値であり、IADは、3mm光ファイバケーブルの発光面で黒体から反射する光の強さの計測値である。
表3に提供する組成詳細に従って終点検出ウィンドウを作製した。ボルテックスミキサを1,000rpmで30秒間使用して、ウィンドウプレポリマーを硬化剤系の成分と混合した。二官能硬化剤(すなわちMBOCA及びMCDEA)を除くすべての原料は60℃の予備混合温度に維持した。MBOCA及びMCDEAは、使用時、120℃の予備混合温度に維持した。
DPT=(IWSi−IWD)÷(IASi−IAD)
式中、IWSi、IWD、IASi及びIADは、SD1024F分光器、キセノン閃光ランプ及び3mm光ファイバケーブルを含むVerity SP2006スペクトル干渉計を使用して、3mm光ファイバケーブルの発光面を原点とし終点検出ウィンドウの第一面に対して(垂直方向に)配置し、所与の波長の光(すなわち、それぞれ400nm及び800nm)をウィンドウの厚さTWを通して向け、第一の面に対して実質的に平行な終点検出ウィンドウの第二の面に対して配置された面から反射してウィンドウの厚さTWを反対に通過する所与の波長の光の強さを原点で計測することによって計測され、IWSiは、原点からウィンドウを通過し、ウィンドウの第二の面に対して配置されたシリコンブランケットウェーハの表面から反射してウィンドウを反対に通過して原点に達する所与の波長の光の強さの計測値であり、IWDは、原点からウィンドウを通過し、黒体の表面から反射してウィンドウを反対に通過して原点に達する所与の波長の光の強さの計測値であり、IASiは、原点から終点検出ウィンドウの厚さTwに等しい空気の厚さを通過し、3mm光ファイバケーブルの発光面に対して垂直方向に配置されたシリコンブランケットウェーハの表面から反射して空気の厚さを反対に通過して原点に達する所与の波長の光の強さの計測値であり、IADは、3mm光ファイバケーブルの発光面で黒体から反射する所与の波長の光の強さの計測値である。
Claims (10)
- 研磨面を有する研磨層、及び
終点検出ウィンドウ
を含み、前記終点検出ウィンドウが、
2〜6.5重量%の未反応NCO基を有するイソシアネート末端ウレタンプレポリマーと、
二官能硬化剤少なくとも5重量%、
1分子あたり少なくとも1個の窒素原子を有し、1分子あたり平均少なくとも3個のヒドロキシル基を有するアミン開始ポリオール硬化剤少なくとも5重量%、及び
2,000〜100,000の数平均分子量MNを有し、1分子あたり平均3〜10個のヒドロキシル基を有する高分子量ポリオール硬化剤25〜90重量%
を含む硬化剤系と
を含む成分の反応生成物を含む、化学機械研磨パッド。 - 前記研磨面が、磁性基材、光学基材及び半導体基材の少なくとも一つからなる群より選択される基材を研磨するように適合されている、請求項1記載の化学機械研磨パッド。
- 前記硬化剤系が複数の反応性水素基を有し、前記イソシアネート末端ウレタンプレポリマーが複数の未反応NCO基を有し、前記未反応NCO基に対する前記反応性水素基の化学量論比が0.7〜1.2である、請求項1記載の化学機械研磨パッド。
- 前記終点検出ウィンドウが、≧1g/cm3の密度、0.1容量%未満の気孔率、10〜50のショアD硬度、≦400%の破断点伸び及び30〜100%の800nmでのダブルパス透過率DPT800を示す、請求項1記載の化学機械研磨パッド。
- 前記終点検出ウィンドウがさらに、25〜100%の400nmでのダブルパス透過率DPT400を示す、請求項4記載の化学機械研磨パッド。
- 前記研磨面が、その中に形成されたらせん溝パターンを有する、請求項2記載の化学機械研磨パッド。
- 請求項1記載の化学機械研磨パッドを製造する方法であって、
研磨面を有する研磨層を提供する工程、
2〜6.5重量%の未反応NCO基を有するイソシアネート末端ウレタンプレポリマーを提供する工程、
二官能芳香族硬化剤少なくとも5重量%、
1分子あたり少なくとも1個の窒素原子を有し、1分子あたり平均少なくとも3個のヒドロキシル基を有するアミン開始ポリオール硬化剤少なくとも5重量%、及び
2,000〜100,000の数平均分子量MNを有し、1分子あたり平均3〜10個のヒドロキシル基を有する高分子量ポリオール硬化剤25〜90重量%
を含む硬化剤系を提供する工程、
前記イソシアネート末端ウレタンプレポリマーと前記硬化剤系とを合わせて混合物を形成する工程、
前記混合物を反応させて生成物を形成する工程、
前記生成物から終点検出ウィンドウを形成する工程、及び
前記終点検出ウィンドウを前記研磨層と結合させて化学機械研磨パッドを提供する工程
を含む方法。 - 前記終点検出ウィンドウが一体型ウィンドウである、請求項7記載の方法。
- 基材を研磨する方法であって、
プラテン、光源及びフォトセンサを有する化学機械研磨装置を提供する工程、
少なくとも一つの基材を提供する工程、
請求項1記載の化学機械研磨パッドを提供する工程、
前記化学機械研磨パッドを前記プラテンの上に設置する工程、
場合によっては、研磨面と前記基材との間の界面に研磨媒体を提供する工程、
前記研磨面と前記基材との間に動的接触を生じさせて、少なくともいくらかの材料を前記基材から除去する工程、及び
前記光源からの光を前記終点検出ウィンドウに通して伝達し、前記基材の表面から反射して前記終点検出ウィンドウを反対に通過して前記フォトセンサに入射する光を分析することによって研磨終点を決定する工程
を含む方法。 - 前記少なくとも一つの基材が、磁性基材、光学基材及び半導体基材の少なくとも一つからなる群より選択される、請求項9記載の方法。
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