JP2015144261A5 - - Google Patents

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Publication number
JP2015144261A5
JP2015144261A5 JP2014257760A JP2014257760A JP2015144261A5 JP 2015144261 A5 JP2015144261 A5 JP 2015144261A5 JP 2014257760 A JP2014257760 A JP 2014257760A JP 2014257760 A JP2014257760 A JP 2014257760A JP 2015144261 A5 JP2015144261 A5 JP 2015144261A5
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Prior art keywords
light
emitting device
light emitting
photoluminescent
array
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JP2014257760A
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Japanese (ja)
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JP2015144261A (en
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Priority claimed from US14/141,275 external-priority patent/US8957585B2/en
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Publication of JP2015144261A publication Critical patent/JP2015144261A/en
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Claims (20)

発光デバイスであって、
光透過性基板と、
前記光透過性基板の第1の面に載置され、励起光を生成するように動作可能な固体発光体の第1のアレイと、
少なくとも1つのフォトルミネセンス材料の粒子と光反射材料の粒子との混合物を含む、フォトルミネセンス波長変換コンポーネントであって、動作中、前記第1のアレイの固体発光体によって生成される前記励起光の一部分が、前記フォトルミネセンス波長変換コンポーネントを通じて放出されて、最終的な可視発光産物に寄与するように構成される、フォトルミネセンス波長変換コンポーネントと、を備える、発光デバイス。
A light emitting device,
A light transmitting base plate,
It is placed on a first surface of the light transmitting base plate, a first array of operable solid-state light emitters to generate excitation Okoshiko,
A photoluminescence wavelength converting component comprising a mixture of particles of at least one photoluminescent material and particles of light reflecting material, wherein in operation the excitation light generated by the solid state light emitter of the first array A photoluminescent wavelength converting component, wherein a portion of the photoluminescent wavelength converting component is configured to be emitted through the photoluminescent wavelength converting component and contribute to a final visible luminescent product.
前記光透過性基板の第2の面に載置され、固体発光体の第2のアレイを更に備える、請求項1に記載の発光デバイス。 Placed on the second surface of the light transmitting base plate, further comprising a second array of solid state light emitters, light emitting device according to claim 1. 前記光透過性基板は、可視光に対して少なくとも50%の透過率を有する、請求項1に記載の発光デバイス。 The transmission base plate has at least 50% transmittance for the visible light emitting device of claim 1. 前記光透過性基板は、熱伝導性である、請求項1に記載の発光デバイス。 The transmission base plate is thermally conductive, light-emitting device according to claim 1. 前記光透過性基板の少なくとも一部は、酸化マグネシウム、サファイア、酸化アルミニウム、石英ガラス、窒化アルミニウム、及びダイヤモンドからなる群から選択される、請求項4に記載の発光デバイス。 At least a portion of the transmission base plate, magnesium oxide, sapphire, aluminum oxide, quartz glass, is selected from the group consisting of aluminum nitride, and diamond, the light emitting device of claim 4. 前記フォトルミネセンスコンポーネントは、固体発光体の前記アレイ又はそれぞれのアレイに直接適用される、前記少なくとも1つのフォトルミネセンス材料と前記光反射材料の粒子との混合物を含む、請求項1に記載の発光デバイス。   2. The photoluminescent component of claim 1, comprising a mixture of the at least one photoluminescent material and particles of the light reflecting material applied directly to the array or each array of solid state light emitters. Light emitting device. 前記フォトルミネセンスコンポーネントは、固体発光体の前記アレイ又はそれぞれのアレイに対して遠隔である、請求項1に記載の発光デバイス。   The light emitting device of claim 1, wherein the photoluminescent component is remote to the array or each array of solid state light emitters. 前記波長変換コンポーネントの表面は、前記複数の固体発光体から少なくとも5mmの距離で位置付け可能である、請求項7に記載の発光デバイス。   The light emitting device of claim 7, wherein a surface of the wavelength converting component is positionable at a distance of at least 5 mm from the plurality of solid state light emitters. 前記波長変換コンポーネントは、実質的に円筒形の管を備える、請求項7に記載の発光デバイス。   The light emitting device of claim 7, wherein the wavelength converting component comprises a substantially cylindrical tube. 前記光反射材料は、0.01μm〜10μm、0.01μm〜1μm、及び0.1μm〜1μmからなる群から選択される範囲の粒径を有する、請求項1に記載の発光デバイス。   The light-emitting device according to claim 1, wherein the light reflecting material has a particle size in a range selected from the group consisting of 0.01 μm to 10 μm, 0.01 μm to 1 μm, and 0.1 μm to 1 μm. 前記少なくとも1つのフォトルミネセンス材料に対する光反射材料の重量充填百分率は、0.01%〜10%、0.01%〜1%、0.1%〜1%、及び0.5%〜1%からなる群から選択される範囲である、請求項1に記載の発光デバイス。   The weight filling percentage of the light reflecting material relative to the at least one photoluminescent material is 0.01% to 10%, 0.01% to 1%, 0.1% to 1%, and 0.5% to 1%. The light emitting device according to claim 1, wherein the light emitting device is in a range selected from the group consisting of: 前記光反射材料は、酸化マグネシウム、二酸化チタン、硫酸バリウム、及びこれらの組み合わせからなる群から選択される、請求項1に記載の発光デバイス。   The light emitting device of claim 1, wherein the light reflecting material is selected from the group consisting of magnesium oxide, titanium dioxide, barium sulfate, and combinations thereof. 前記波長変換コンポーネントは、少なくとも1つの層として提供される、フォトルミネセンス材料と光反射材料との混合物、及び前記光透過性基板の体積全体に均一に分布された、フォトルミネセンス材料と光反射材料との混合物からなる群から選択される、請求項1に記載の発光デバイス。 The wavelength converting component is provided as at least one layer , a mixture of a photoluminescent material and a light reflecting material, and a photoluminescent material and a light reflecting material distributed uniformly throughout the volume of the light transmissive substrate. 2. A light emitting device according to claim 1 selected from the group consisting of mixtures with materials. 前記光反射材料の前記粒子は、前記粒子が、前記固体発光体によって生成される励起光を、前記少なくとも1つの蛍光体材料によって生成される光よりも相対的に多く散乱させるような粒径に対応する、請求項1に記載の発光デバイス。   The particles of the light reflecting material have a particle size such that the particles scatter relatively more excitation light generated by the solid state light emitter than light generated by the at least one phosphor material. The corresponding light emitting device according to claim 1. 前記フォトルミネセンス波長変換コンポーネントに隣接する光拡散層を更に備える、請求項1に記載の発光デバイス。   The light emitting device of claim 1, further comprising a light diffusing layer adjacent to the photoluminescence wavelength converting component. 前記光拡散層は、前記粒子が、前記固体発光体によって生成される励起光を、前記少なくとも1つのフォトルミネセンス材料によって生成される光よりも相対的に多く散乱させるような粒径に対応する光反射材料の粒子を含む、請求項15に記載の発光デバイス。   The light diffusing layer corresponds to a particle size such that the particles scatter relatively more excitation light generated by the solid state light emitter than light generated by the at least one photoluminescent material. The light emitting device of claim 15 comprising particles of light reflecting material. 前記光反射材料は、100nm〜150nmの範囲の粒径を有する、請求項16に記載の発光デバイス。   The light emitting device according to claim 16, wherein the light reflecting material has a particle size in a range of 100 nm to 150 nm. 前記固体発光体の第1のアレイは、前記光透過性基板の前記第1の面に電気的に接続されている、請求項1に記載の発光デバイス。The light emitting device of claim 1, wherein the first array of solid state light emitters is electrically connected to the first surface of the light transmissive substrate. 前記固体発光体の第2のアレイは、前記光透過性基板の前記第2の面に電気的に接続されている、請求項2に記載の発光デバイス。The light emitting device of claim 2, wherein the second array of solid state light emitters is electrically connected to the second surface of the light transmissive substrate. 前記光透過性基板は光透過性回路基板を備える、請求項1に記載の発光デバイス。  The light emitting device according to claim 1, wherein the light transmissive substrate comprises a light transmissive circuit board.
JP2014257760A 2013-12-26 2014-12-19 Solid-state light emitting device with photoluminescence wavelength conversion Pending JP2015144261A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/141,275 US8957585B2 (en) 2010-10-05 2013-12-26 Solid-state light emitting devices with photoluminescence wavelength conversion
US14/141,275 2013-12-26

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JP2015144261A JP2015144261A (en) 2015-08-06
JP2015144261A5 true JP2015144261A5 (en) 2018-02-08

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CN115000281A (en) * 2022-05-07 2022-09-02 旭宇光电(深圳)股份有限公司 Fluorescent powder glue for LED and LED lamp

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