JP2015130430A5 - - Google Patents

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JP2015130430A5
JP2015130430A5 JP2014001720A JP2014001720A JP2015130430A5 JP 2015130430 A5 JP2015130430 A5 JP 2015130430A5 JP 2014001720 A JP2014001720 A JP 2014001720A JP 2014001720 A JP2014001720 A JP 2014001720A JP 2015130430 A5 JP2015130430 A5 JP 2015130430A5
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Japan
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heat sink
power module
substrate
module substrate
less
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JP2014001720A
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Japanese (ja)
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JP6011552B2 (en
JP2015130430A (en
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Priority claimed from JP2014001720A external-priority patent/JP6011552B2/en
Priority to JP2014001720A priority Critical patent/JP6011552B2/en
Priority to CN201480050150.1A priority patent/CN105580131B/en
Priority to US15/028,173 priority patent/US10032648B2/en
Priority to PCT/JP2014/076952 priority patent/WO2015053316A1/en
Priority to EP14852005.9A priority patent/EP3057125B1/en
Priority to KR1020167011962A priority patent/KR102232098B1/en
Priority to TW103135202A priority patent/TWI635583B/en
Publication of JP2015130430A publication Critical patent/JP2015130430A/en
Publication of JP2015130430A5 publication Critical patent/JP2015130430A5/ja
Publication of JP6011552B2 publication Critical patent/JP6011552B2/en
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Description

本発明は、上記ヒートシンク付パワーモジュール用基板を製造する方法であって、前記パワーモジュール用基板と前記ヒートシンクとを接合する際に、前記パワーモジュール用基板と前記ヒートシンクとを積層し、この積層体を曲率半径１０００ｍｍ以上６０００ｍｍ以下の凸面又は凹面が対向面に形成された二枚の加圧板の対向面間に挟むことにより前記ヒートシンクの接合面を凹状の反りとする変形を生じさせた状態で加熱し、前記変形を生じさせた状態で冷却することを特徴とする。 The present invention is a method of manufacturing a power module substrate with a heat sink, wherein the power module substrate and the heat sink are laminated when the power module substrate and the heat sink are joined, and the laminate is provided. Is heated in a state in which deformation of the joint surface of the heat sink is caused to be a concave warp by sandwiching a convex surface or a concave surface having a radius of curvature of 1000 mm or more and 6000 mm or less between two opposing surfaces of a pressure plate. And it cools in the state which produced the said deformation | transformation, It is characterized by the above-mentioned.

Claims (4)

セラミックス基板の一方の面に回路層が配設され、前記セラミックス基板の他方の面に純度９９％以上のアルミニウムからなる金属層が配設されたパワーモジュール用基板と、前記パワーモジュール用基板の前記金属層に接合され、線膨張率が７×１０−６／Ｋ以上１２×１０−６／Ｋ以下の材料からなるヒートシンクと、を備えたヒートシンク付パワーモジュール用基板であって、前記ヒートシンクの最大長さをＬとし、前記ヒートシンクの反り量をＺとし、前記ヒートシンクの接合面側に凸状の変形を正の反り量とした場合に、ＬとＺの比率Ｚ／Ｌが−０．００２以上０．００２以下の範囲内とされ、２８０℃まで加熱した際における前記比率Ｚ／Ｌが−０．００２以上０．００２以下の範囲とされ、その加熱後２５℃まで冷却した際の前記比率Ｚ／Ｌが−０．００２以上０．００２以下の範囲内とされることを特徴とするヒートシンク付パワーモジュール用基板。 A power module substrate in which a circuit layer is disposed on one surface of a ceramic substrate, and a metal layer made of aluminum having a purity of 99% or more is disposed on the other surface of the ceramic substrate, and the power module substrate A power module substrate with a heat sink, comprising: a heat sink made of a material having a linear expansion coefficient of 7 × 10 −6 / K to 12 × 10 −6 / K. When the length is L, the warp amount of the heat sink is Z, and the convex deformation on the joining surface side of the heat sink is a positive warp amount, the ratio Z / L of L to Z is −0.002 or more. When the ratio Z / L is within the range of -0.002 or more and 0.002 or less when heated to 280 ° C within the range of 0.002 or less, and cooled to 25 ° C after the heating It said ratio Z / L is a substrate for a power module with a heat sink, characterized in that which is within the range of -0.002 or 0.002 or less. 前記ヒートシンクは、ＡｌＳｉＣ系複合材料、Ａｌグラファイト複合材料、Ｃｕ‐Ｗ系合金、又はＣｕ‐Ｍｏ系合金により形成されていることを特徴とする請求項１記載のヒートシンク付パワーモジュール用基板。   2. The power module substrate with a heat sink according to claim 1, wherein the heat sink is formed of an AlSiC composite material, an Al graphite composite material, a Cu-W alloy, or a Cu-Mo alloy. ２５℃から２８０℃まで温度変化させた場合において、前記比率Ｚ／Ｌの最大値と最小値との差ΔＺ／Ｌが０．００２以下とされることを特徴とする請求項１又は２に記載のヒートシンク付パワーモジュール用基板。   3. The difference ΔZ / L between the maximum value and the minimum value of the ratio Z / L is 0.002 or less when the temperature is changed from 25 ° C. to 280 ° C. 3. Power module board with heat sink. 請求項１から３のいずれか一項に記載のヒートシンク付パワーモジュール用基板を製造する方法であって、前記パワーモジュール用基板と前記ヒートシンクとを接合する際に、前記パワーモジュール用基板と前記ヒートシンクとを積層し、この積層体を曲率半径１０００ｍｍ以上６０００ｍｍ以下の凸面又は凹面が対向面に形成された二枚の加圧板の対向面間に挟むことにより前記ヒートシンクの接合面を凹状の反りとする変形を生じさせた状態で加熱し、前記変形を生じさせた状態で冷却することを特徴とするヒートシンク付パワーモジュール用基板の製造方法。 A method for manufacturing a power module substrate with a heat sink according to any one of claims 1 to 3, wherein the power module substrate and the heat sink are joined when the power module substrate and the heat sink are joined. Are sandwiched between the opposing surfaces of two pressure plates having a convex surface or a concave surface having a radius of curvature of 1000 mm or more and 6000 mm or less formed on the opposing surfaces, so that the joint surface of the heat sink becomes a concave warp. A method for producing a substrate for a power module with a heat sink, characterized by heating in a deformed state and cooling in the deformed state.
JP2014001720A 2013-10-10 2014-01-08 Power module substrate with heat sink and manufacturing method thereof Active JP6011552B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2014001720A JP6011552B2 (en) 2014-01-08 2014-01-08 Power module substrate with heat sink and manufacturing method thereof
EP14852005.9A EP3057125B1 (en) 2013-10-10 2014-10-08 Substrate for heat sink-equipped power module, and production method for same
US15/028,173 US10032648B2 (en) 2013-10-10 2014-10-08 Method of manufacturing power-module substrate with heat-sink
PCT/JP2014/076952 WO2015053316A1 (en) 2013-10-10 2014-10-08 Substrate for heat sink-equipped power module, and production method for same
CN201480050150.1A CN105580131B (en) 2013-10-10 2014-10-08 Substrate for power module with heat sink and method for manufacturing same
KR1020167011962A KR102232098B1 (en) 2013-10-10 2014-10-08 Substrate for heat sink-equipped power module, and production method for same
TW103135202A TWI635583B (en) 2013-10-10 2014-10-09 Substrate with heat sink power module and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014001720A JP6011552B2 (en) 2014-01-08 2014-01-08 Power module substrate with heat sink and manufacturing method thereof

Related Child Applications (1)

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JP2016177373A Division JP2017011293A (en) 2016-09-12 2016-09-12 Power module substrate with heat sink and manufacturing method of the same

Publications (3)

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JP2015130430A JP2015130430A (en) 2015-07-16
JP2015130430A5 true JP2015130430A5 (en) 2016-02-12
JP6011552B2 JP6011552B2 (en) 2016-10-19

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Publication number Priority date Publication date Assignee Title
JP6717238B2 (en) * 2017-03-07 2020-07-01 三菱マテリアル株式会社 Power module substrate with heat sink
JP6776953B2 (en) * 2017-03-07 2020-10-28 三菱マテリアル株式会社 Board for power module with heat sink
JP6946107B2 (en) * 2017-08-04 2021-10-06 デンカ株式会社 Power module
WO2019038964A1 (en) * 2017-08-21 2019-02-28 株式会社村田製作所 Current sensor
JP7428034B2 (en) 2020-03-23 2024-02-06 三菱マテリアル株式会社 Manufacturing method of insulated circuit board with heat sink
DE112020007724T5 (en) * 2020-10-23 2023-08-10 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing the semiconductor device

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JP3155874B2 (en) * 1993-10-19 2001-04-16 電気化学工業株式会社 Circuit board
JP3180677B2 (en) * 1996-08-22 2001-06-25 三菱マテリアル株式会社 Ceramic circuit board with heat sink
JP3792180B2 (en) * 2002-07-10 2006-07-05 電気化学工業株式会社 Manufacturing method of heat dissipation parts
JP2008235852A (en) * 2007-02-23 2008-10-02 Hitachi Metals Ltd Ceramic substrate and semiconductor module using the same
JP4683043B2 (en) * 2007-12-28 2011-05-11 富士電機システムズ株式会社 Manufacturing method of semiconductor device
JP6012990B2 (en) * 2012-03-19 2016-10-25 日本軽金属株式会社 Manufacturing method of radiator integrated substrate
JP5966512B2 (en) * 2012-03-29 2016-08-10 三菱マテリアル株式会社 Manufacturing method of power module substrate with heat sink

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