JP2015126060A - Semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can make it harder to cause failure in encapsulation of a semiconductor chip even when positional deviation occurs when an encapsulation sheet is arranged.SOLUTION: A semiconductor device manufacturing method comprises: a process A of preparing a laminate in which a semiconductor chip is fixed on a support medium; a process B of preparing an encapsulation sheet; a process C of arranging the encapsulation sheet on the semiconductor chip of the laminate; and a process D of embedding the semiconductor chip to the encapsulation sheet to form an encapsulated body in which the semiconductor chip is embedded in the encapsulation sheet. A ratio d2/d1 of a distance d1 between two farthest two points on an outer periphery of the support medium in planar view to a distance d2 between the farthest two points on an outer periphery of the encapsulation sheet in planar view is equal to or higher than 1.007.

Description

  The present invention relates to a method for manufacturing a semiconductor device.

  Conventionally, as a method for manufacturing a semiconductor device, one or a plurality of semiconductor chips fixed to a substrate or the like is sealed with a sealing resin, and then the sealing body is diced into a package of a semiconductor device unit. It has been known. As such a sealing resin, for example, a sealing sheet made of a thermosetting resin is known (see, for example, Patent Document 1).

JP 2006-19714 A

  When manufacturing a semiconductor device by the above-described method, a sealing sheet is disposed on a semiconductor chip fixed to a substrate. However, when the alignment is shifted, there is a problem that the end portion of the substrate is not sealed, or a portion where the sealing thickness is thin occurs at the end portion.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to make it difficult for defective sealing of a semiconductor chip to occur even when a positional shift occurs when a sealing sheet is disposed. An object of the present invention is to provide a method for manufacturing a semiconductor device.

  The inventors of the present application have found that the above-mentioned problems can be solved by adopting the following configuration, and have completed the present invention.

That is, the present invention is a method of manufacturing a semiconductor device,
Preparing a laminate in which a semiconductor chip is fixed on a support; and
Step B for preparing a sealing sheet;
A step C of disposing the sealing sheet on the semiconductor chip of the laminate;
A step D of embedding the semiconductor chip in the sealing sheet and forming a sealing body in which the semiconductor chip is embedded in the sealing sheet;
A ratio d2 / d1 between a distance d1 between two furthest points on the outer periphery in plan view of the support and a distance d2 between two furthest points on the outer periphery in plan view of the sealing sheet is 1.007 or more. It is characterized by being.

  According to the semiconductor device manufacturing method of the present invention, the distance d1 between the farthest two points on the outer periphery in plan view of the support and the distance between the two farthest points on the outer periphery in plan view of the sealing sheet. The ratio d2 / d1 with d2 is 1.007 or more. Accordingly, when the sealing sheet is arranged on the semiconductor chip fixed on the support, even if a positional shift occurs, it is possible to prevent the semiconductor chip from being poorly sealed.

  The said structure WHEREIN: It is preferable that the minimum melt viscosity in 40 to 150 degreeC of the said sheet | seat for sealing is 50 Pa.s-20000 Pa.s.

  When the minimum melt viscosity at 40 ° C. to 150 ° C. of the sealing sheet is in the range of 50 Pa · s to 20000 Pa · s, the resin constituting the sealing sheet at the time of forming the sealing body is appropriately in the sheet surface direction. To spread. Therefore, for example, in the process C, even if there is a semiconductor chip in which a part of the laminated body protrudes from the sealing sheet in a plan view or the sealing sheet is not disposed on the upper surface, the embedding process (process D) ) Can be sealed with a resin constituting a sealing sheet spreading in the sheet surface direction.

  In the step D, it is preferable that a hot press condition when the semiconductor chip is embedded in the sealing sheet is within a temperature range of 40 to 150 ° C. and a range of 0.1 to 10 MPa.

  When the hot press conditions are within a temperature range of 40 to 150 ° C. and within a range of 0.1 to 10 MPa, the protrusion of the resin constituting the sealing sheet at the time of forming the sealing body is within a certain range. It becomes. As a result, the semiconductor chip can be reliably sealed without excessively losing the resin.

  ADVANTAGE OF THE INVENTION According to this invention, even if position shift arises when arrange | positioning the sheet | seat for sealing, the manufacturing method of the semiconductor device which can make it difficult to produce the sealing defect of a semiconductor chip can be provided.

(A) is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment, (b) is the top view. (A) is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment, (b) is the top view. (A) is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment, (b) is the top view. (A) is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment, (b) is the top view. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on this embodiment.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited only to these embodiments.

The manufacturing method of the semiconductor device according to this embodiment is as follows:
Preparing a laminate in which a semiconductor chip is temporarily fixed on a temporary fixing material; and
Step B for preparing a sealing sheet;
A step C of disposing the sealing sheet on the semiconductor chip of the laminate;
Including at least a step D of embedding the semiconductor chip in the sealing sheet and forming a sealing body in which the semiconductor chip is embedded in the sealing sheet;
A ratio d2 / d1 between a distance d1 between two furthest points on the outer periphery in plan view of the support and a distance d2 between two furthest points on the outer periphery in plan view of the sealing sheet is 1.007 or more. It is.
That is, in this embodiment, the case where the “laminated body in which the semiconductor chip is fixed on the support” in the present invention is the “laminated body in which the semiconductor chip is temporarily fixed on the temporary fixing material” will be described. The present embodiment is a method of manufacturing a semiconductor device called a so-called Fan-out (fan-out) wafer level package (WLP).

  FIG. 1A is a schematic cross-sectional view for explaining the method for manufacturing a semiconductor device according to this embodiment, and FIG. 1B is a plan view thereof. FIG. 2A is a schematic cross-sectional view for explaining the method for manufacturing a semiconductor device according to this embodiment, and FIG. 2B is a plan view thereof. FIG. 3A is a schematic cross-sectional view for explaining the semiconductor device manufacturing method according to the present embodiment, and FIG. 3B is a plan view thereof. FIG. 4A is a schematic cross-sectional view for explaining the semiconductor device manufacturing method according to the present embodiment, and FIG. 4B is a plan view thereof. 5 to 9 are schematic cross-sectional views for explaining the method for manufacturing a semiconductor device according to this embodiment. In FIG. 3B and FIG. 4B, for convenience of explanation, the upper heating plate and the lower heating plate are omitted.

[Laminated body preparation process]
As shown in FIGS. 1A and 1B, in the method for manufacturing a semiconductor device according to this embodiment, first, a stacked body 50 in which a semiconductor chip 53 is temporarily fixed on a temporary fixing material 60 is prepared. (Process A). In the present embodiment, the temporary fixing material 60 corresponds to the “support” of the present invention. The laminated body 50 is obtained as follows, for example.

<Temporary fixing material preparation process>
In the temporary fixing material preparation step, a temporary fixing material 60 in which a thermally expandable pressure-sensitive adhesive layer 60a is laminated on a support base material 60b is prepared (see FIG. 1A). In addition, it can replace with a thermally expansible adhesive layer, and can also use a radiation curing type adhesive layer. In the present embodiment, a temporary fixing material 60 including a thermally expandable pressure-sensitive adhesive layer will be described.

(Thermal expansion adhesive layer)
The thermally expandable pressure-sensitive adhesive layer 60a can be formed of a pressure-sensitive adhesive composition containing a polymer component and a foaming agent. As the polymer component (particularly the base polymer), an acrylic polymer (sometimes referred to as “acrylic polymer A”) can be suitably used. Examples of the acrylic polymer A include those using (meth) acrylic acid ester as a main monomer component. Examples of the (meth) acrylic acid ester include (meth) acrylic acid alkyl ester (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, sec-butyl ester, t-butyl ester, Pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, Linear or branched alkyl ester having 1 to 30 carbon atoms, particularly 4 to 18 carbon atoms, of an alkyl group such as hexadecyl ester, octadecyl ester or eicosyl ester Le etc.) and (meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, cyclohexyl ester, etc.) and the like. These (meth) acrylic acid esters may be used alone or in combination of two or more.

  The acrylic polymer A corresponds to other monomer components that can be copolymerized with the (meth) acrylic acid ester, if necessary, for the purpose of modifying cohesive strength, heat resistance, crosslinkability, and the like. Units may be included. Examples of such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and carboxyethyl acrylate; acid anhydrides such as maleic anhydride and itaconic anhydride Physical group-containing monomers; hydroxyl group-containing monomers such as hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, and hydroxybutyl (meth) acrylate; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, (N-substituted or unsubstituted) amide monomers such as N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth) acrylamide; vinyl ester monomers such as vinyl acetate and vinyl propionate Styling Styrene monomers such as α-methylstyrene; vinyl ether monomers such as vinyl methyl ether and vinyl ethyl ether; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; epoxy group-containing acrylic monomers such as glycidyl (meth) acrylate Olefin or diene monomer such as ethylene, propylene, isoprene, butadiene and isobutylene; aminoethyl (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, t-butylaminoethyl (meth) acrylate, etc. (Substituted or unsubstituted) amino group-containing monomers; (meth) acrylic acid alkoxyalkyl monomers such as (meth) acrylic acid methoxyethyl and (meth) acrylic acid ethoxyethyl; N-vinylpyrrolidone, N -Methyl vinyl pyrrolidone, N-vinyl pyridine, N-vinyl piperidone, N-vinyl pyrimidine, N-vinyl piperazine, N-vinyl pyrazine, N-vinyl pyrrole, N-vinyl imidazole, N-vinyl oxazole, N-vinyl morpholine, N -Monomers having a nitrogen atom-containing ring such as vinyl caprolactam; N-vinylcarboxylic acid amides; Monomers containing sulfonic acid groups such as styrene sulfonic acid, allyl sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate A phosphate group-containing monomer such as 2-hydroxyethylacryloyl phosphate; a maleimide monomer such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide, N-phenylmaleimide; N Itacimide monomers such as methylitaconimide, N-ethylitaconimide, N-butylitaconimide, N-octylitaconimide, N-2-ethylhexylitaconimide, N-cyclohexylitaconimide, N-laurylitaconimide; N- ( Succinimide monomers such as (meth) acryloyloxymethylene succinimide, N- (meth) acryloyl-6-oxyhexamethylene succinimide, N- (meth) acryloyl-8-oxyoctamethylene succinimide; polyethylene glycol (meth) acrylate, (meta ) Glycol acrylic ester monomers such as polypropylene glycol acrylate; Monomers having an oxygen atom-containing heterocycle such as tetrahydrofurfuryl (meth) acrylate; Fluorine Acrylic acid ester monomer containing fluorine atom such as (meth) acrylate; Acrylic acid ester monomer containing silicon atom such as silicone (meth) acrylate; Hexanediol di (meth) acrylate, (Poly) ethylene glycol di (Meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, Dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, divinylbenzene, butyl di (meth) acrylate, hexyl And polyfunctional monomers such as di (meth) acrylate.

  The acrylic polymer A can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization may be performed by any method such as solution polymerization (for example, radical polymerization, anionic polymerization, cationic polymerization), emulsion polymerization, bulk polymerization, suspension polymerization, photopolymerization (for example, ultraviolet (UV) polymerization). it can.

  The weight average molecular weight of the acrylic polymer A is not particularly limited, but is preferably 350,000 to 1,000,000, more preferably about 450,000 to 800,000.

  In addition, an external cross-linking agent can be appropriately used for the heat-expandable pressure-sensitive adhesive in order to adjust the pressure-sensitive adhesive force. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive. The amount of the external crosslinking agent used is generally 20 parts by weight or less (preferably 0.1 to 10 parts by weight) with respect to 100 parts by weight of the base polymer.

  As described above, the heat-expandable pressure-sensitive adhesive layer 60a contains a foaming agent for imparting heat-expandability. Therefore, in a state where the sealing body 58 is formed on the thermally expandable pressure-sensitive adhesive layer 60a of the temporary fixing material 60 (see FIG. 5), the temporary fixing material 60 is at least partially heated at any time, and the heating is performed. By expanding and / or expanding the foaming agent contained in the portion of the thermally expandable pressure-sensitive adhesive layer 60a, the heat-expandable pressure-sensitive adhesive layer 60a is at least partially expanded, and this heat-expandable pressure-sensitive adhesive layer Due to at least partial expansion of 60a, the pressure-sensitive adhesive surface (interface with the sealing body 58) corresponding to the expanded portion is deformed into an uneven shape, and the thermally expandable pressure-sensitive adhesive layer 60a and the sealing body 58 are The adhesion area is reduced, whereby the adhesion force between the two is reduced, and the sealing body 58 can be peeled from the temporary fixing material 60 (see FIG. 6).

(Foaming agent)
The foaming agent used in the heat-expandable pressure-sensitive adhesive layer 60a is not particularly limited, and can be appropriately selected from known foaming agents. A foaming agent can be used individually or in combination of 2 or more types. As the foaming agent, thermally expandable microspheres can be suitably used.

(Thermally expandable microsphere)
The heat-expandable microsphere is not particularly limited, and can be appropriately selected from known heat-expandable microspheres (such as various inorganic heat-expandable microspheres and organic heat-expandable microspheres). As the thermally expandable microspheres, a microencapsulated foaming agent can be suitably used from the viewpoint of easy mixing operation. Examples of such thermally expandable microspheres include microspheres in which substances such as isobutane, propane, and pentane that are easily gasified and expanded by heating are encapsulated in an elastic shell. The shell is often formed of a hot-melt material or a material that is destroyed by thermal expansion. Examples of the substance forming the shell include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.

  Thermally expandable microspheres can be produced by a conventional method such as a coacervation method or an interfacial polymerization method. Examples of thermally expandable microspheres include, for example, a series of “Matsumoto Microsphere F30” and “Matsumoto Microsphere F301D” (trade names “Matsumoto Microsphere F30”, manufactured by Matsumoto Yushi Seiyaku Co., Ltd.). "Matsumoto Microsphere F50D", "Matsumoto Microsphere F501D", "Matsumoto Microsphere F80SD", "Matsumoto Microsphere F80VSD", etc.) Commercially available products such as “051DU”, “053DU”, “551DU”, “551-20DU”, and “551-80DU” can be used.

  When thermally expandable microspheres are used as the foaming agent, the particle size (average particle diameter) of the thermally expandable microspheres can be appropriately selected according to the thickness of the thermally expandable pressure-sensitive adhesive layer. . The average particle diameter of the heat-expandable microspheres can be selected from a range of, for example, 100 μm or less (preferably 80 μm or less, more preferably 1 μm to 50 μm, particularly 1 μm to 30 μm). Note that the adjustment of the particle size of the thermally expandable microspheres may be performed in the process of generating the thermally expandable microspheres, or may be performed by means such as classification after the generation. It is preferable that the thermally expandable microspheres have the same particle size.

(Other foaming agents)
In the present embodiment, as the foaming agent, a foaming agent other than the thermally expandable microsphere can also be used. As such a foaming agent, various foaming agents such as various inorganic foaming agents and organic foaming agents can be appropriately selected and used. Typical examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogen carbonate, sodium hydrogen carbonate, ammonium nitrite, sodium borohydride, various azides and the like.

  Representative examples of organic foaming agents include, for example, water; chlorofluorinated alkane compounds such as trichloromonofluoromethane and dichloromonofluoromethane; azobisisobutyronitrile, azodicarbonamide, and barium azodi. Azo compounds such as carboxylate; hydrazine compounds such as p-toluenesulfonyl hydrazide, diphenylsulfone-3,3'-disulfonyl hydrazide, 4,4'-oxybis (benzenesulfonyl hydrazide), allyl bis (sulfonyl hydrazide); p- Semicarbazide compounds such as toluylenesulfonyl semicarbazide and 4,4′-oxybis (benzenesulfonyl semicarbazide); Triazole compounds such as 5-morpholyl-1,2,3,4-thiatriazole; N, N′-dinitrosopene Methylene terrorism Ramin, N, N'-dimethyl -N, N'N-nitroso compounds such as dinitrosoterephthalamide, and the like.

  In this embodiment, in order to reduce the adhesive force of the heat-expandable pressure-sensitive adhesive layer efficiently and stably by heat treatment, the volume expansion coefficient is 5 times or more, especially 7 times or more, particularly 10 times or more. A foaming agent having an appropriate strength that does not burst is preferred.

  The amount of foaming agent (thermally expandable microspheres, etc.) can be set as appropriate depending on the expansion ratio of the thermally expandable pressure-sensitive adhesive layer and the ability to lower the adhesive strength, but generally a thermally expandable pressure-sensitive adhesive layer is formed. The amount is, for example, 1 part by weight to 150 parts by weight (preferably 10 parts by weight to 130 parts by weight, more preferably 25 parts by weight to 100 parts by weight) with respect to 100 parts by weight of the base polymer.

In this embodiment, a foaming agent having a foaming start temperature (thermal expansion start temperature) (T ₀ ) in the range of 80 ° C. to 210 ° C. can be suitably used, and preferably 90 ° C. to 200 ° C. (more Preferably, it has a foaming start temperature of 95 ° C to 200 ° C, particularly preferably 100 ° C to 170 ° C. When the foaming start temperature of the foaming agent is lower than 80 ° C., the foaming agent may foam due to heat at the time of producing or using the sealing body, and the handleability and productivity are lowered. On the other hand, when the foaming start temperature of the foaming agent exceeds 210 ° C., excessive heat resistance is required for the support and the sealing sheet 40, which is not preferable in terms of handleability, productivity, and cost. Incidentally, the foaming starting temperature (T ₀₎ of the blowing agent, corresponding to the foaming starting temperature of the heat-expandable pressure-sensitive adhesive layer (T _0).

  In addition, as a method of foaming the foaming agent (that is, a method of thermally expanding the heat-expandable pressure-sensitive adhesive layer), it can be appropriately selected from known heat foaming methods.

In the present embodiment, the heat-expandable pressure-sensitive adhesive layer has an elastic modulus of 23 ° C. in a form not containing a foaming agent from the viewpoint of a balance between moderate adhesive force before heat treatment and lowering of adhesive force after heat treatment. It is preferably 5 × 10 ⁴ Pa to 1 × 10 ⁶ Pa at ˜150 ° C., more preferably 5 × 10 ⁴ Pa to 8 × 10 ⁵ Pa, and particularly 5 × 10 ⁴ Pa to ⁵ × 10 ⁵ Pa. It is preferable that When the elastic modulus (temperature: 23 ° C. to 150 ° C.) of the thermally expandable pressure-sensitive adhesive layer in a form not containing a foaming agent is less than 5 × 10 ⁴ Pa, the thermal expandability may be inferior and the peelability may decrease. . Moreover, when the elasticity modulus (temperature: 23 degreeC-150 degreeC) in the form which does not contain the foaming agent of a thermally expansible adhesive layer is larger than 1 * 10 < ⁶ > Pa, initial stage adhesiveness may be inferior.

In addition, the thermally expansible adhesive layer of the form which does not contain a foaming agent is corresponded to the adhesive layer formed with the adhesive (The foaming agent is not contained). Therefore, the elastic modulus of the thermally expandable pressure-sensitive adhesive layer in a form not containing a foaming agent can be measured using a pressure-sensitive adhesive (no foaming agent is included). In addition, a thermal expansion adhesive layer is a thermal expansion containing the adhesive which can form the adhesive layer whose elasticity modulus in 23 degreeC-150 degreeC is 5 * 10 < ⁴ > Pa-1 * 10 < ⁶ > Pa, and a foaming agent. It can be formed with an adhesive.

  The modulus of elasticity of the thermally expandable pressure-sensitive adhesive layer in the form not containing the foaming agent is the heat-expandable pressure-sensitive adhesive layer in the form in which the foaming agent is not added (that is, the pressure-sensitive adhesive layer by the pressure-sensitive adhesive not containing the foaming agent). ) (Sample), using a rheometric dynamic viscoelasticity measuring device “ARES”, sample thickness: about 1.5 mm, φ7.9 mm parallel plate jig, in shear mode , Frequency: 1 Hz, rate of temperature increase: 5 ° C./min, strain: 0.1% (23 ° C.), 0.3% (150 ° C.) measured at 23 ° C. and 150 ° C. shear storage elasticity obtained The value of the rate G ′ is assumed.

  The elastic modulus of the thermally expandable pressure-sensitive adhesive layer can be controlled by adjusting the type of the base polymer of the pressure-sensitive adhesive, the crosslinking agent, the additive, and the like.

  The thickness of the heat-expandable pressure-sensitive adhesive layer is not particularly limited, and can be appropriately selected depending on the reduction in adhesive strength, and is, for example, about 5 μm to 300 μm (preferably 20 μm to 150 μm). However, when heat-expandable microspheres are used as the foaming agent, the thickness of the heat-expandable pressure-sensitive adhesive layer is preferably thicker than the maximum particle size of the heat-expandable microspheres contained. When the thickness of the heat-expandable pressure-sensitive adhesive layer is too thin, the surface smoothness is impaired by the unevenness of the heat-expandable microspheres, and the adhesiveness before heating (unfoamed state) is lowered. In addition, the degree of deformation of the heat-expandable pressure-sensitive adhesive layer by heat treatment is small, and the adhesive force is not easily lowered. On the other hand, if the thickness of the heat-expandable pressure-sensitive adhesive layer is too thick, cohesive failure is likely to occur in the heat-expandable pressure-sensitive adhesive layer after expansion or foaming by heat treatment, and adhesive residue may be generated in the sealing body 58. is there.

  The thermally expandable pressure-sensitive adhesive layer may be either a single layer or multiple layers.

  In the present embodiment, the heat-expandable pressure-sensitive adhesive layer has various additives (for example, a colorant, a thickener, a bulking agent, a filler, a tackifier, a plasticizer, an anti-aging agent, an antioxidant, and a surfactant. Agent, cross-linking agent, etc.).

(Supporting substrate)
The support base material 60 b is a thin plate member that serves as a strength matrix of the temporary fixing material 60. What is necessary is just to select suitably considering the handleability, heat resistance, etc. as a material of the support base material 60b, for example, plastic materials, such as metal materials, such as SUS, polyimide, polyamide imide, polyether ether ketone, polyether sulfone, Glass, a silicon wafer, or the like can be used. Among these, a SUS plate is preferable from the viewpoints of heat resistance, strength, reusability, and the like.

  The thickness of the support substrate 60b can be appropriately selected in consideration of the intended strength and handleability, and is preferably 100 to 5000 μm, more preferably 300 to 2000 μm.

(Method for forming temporary fixing material)
The temporary fixing material 60 is obtained by forming the thermally expandable pressure-sensitive adhesive layer 60a on the support base material 60b. The heat-expandable pressure-sensitive adhesive layer is formed into a sheet-like layer by mixing, for example, a pressure-sensitive adhesive, a foaming agent (such as heat-expandable microspheres), and a solvent or other additives as necessary. It can be formed using conventional methods. Specifically, for example, a method of applying a mixture containing a pressure-sensitive adhesive, a foaming agent (such as thermally expandable microspheres), and, if necessary, a solvent and other additives onto the support substrate 60b, an appropriate separator The heat-expandable pressure-sensitive adhesive layer is formed by, for example, a method of applying the mixture on a release paper or the like to form a heat-expandable pressure-sensitive adhesive layer and transferring (transferring) the mixture onto the support substrate 60b. be able to.

(Thermal expansion method of the thermally expandable pressure-sensitive adhesive layer)
In the present embodiment, the thermally expandable pressure-sensitive adhesive layer can be thermally expanded by heating. As the heat treatment method, for example, an appropriate heating means such as a hot plate, a hot air dryer, a near infrared lamp, an air dryer or the like can be used. The heating temperature during the heat treatment may be equal to or higher than the foaming start temperature (thermal expansion start temperature) of the foaming agent (thermally expansible microspheres, etc.) in the heat-expandable pressure-sensitive adhesive layer. It can be set as appropriate depending on the reduction of the adhesion area depending on the type of the agent (thermally expansible microspheres, etc.), the heat resistance of the sealing material including the support substrate and the semiconductor chip, the heating method (heat capacity, heating means, etc.), and the like. As general heat treatment conditions, the temperature is 100 ° C. to 250 ° C., and it is 1 second to 90 seconds (hot plate or the like) or 5 minutes to 15 minutes (hot air dryer or the like). Note that the heat treatment can be performed at an appropriate stage depending on the purpose of use. In some cases, an infrared lamp or heated water can be used as the heat source during the heat treatment.

(Middle layer)
In the present embodiment, an intermediate layer may be provided between the heat-expandable pressure-sensitive adhesive layer 60a and the support base material 60b for the purpose of improving adhesion or improving peelability after heating (see FIG. Not shown). Among them, it is preferable that a rubbery organic elastic intermediate layer is provided as the intermediate layer. Thus, by providing the rubber-like organic elastic intermediate layer, when the semiconductor chip 53 is bonded to the temporary fixing material 60 (see FIG. 1A), the surface of the thermally expandable pressure-sensitive adhesive layer 60a is disposed on the semiconductor chip 53. The surface area of the heat-expandable pressure-sensitive adhesive layer 60a is highly expanded when the sealing body 58 is peeled off from the temporary fixing material 60 (see FIG. The heat-expandable pressure-sensitive adhesive layer 60a can be preferentially and uniformly expanded in the thickness direction.

  The rubbery organic elastic intermediate layer can be interposed on one side or both sides of the support substrate 60b.

  The rubber-like organic elastic intermediate layer is preferably formed of natural rubber, synthetic rubber, or synthetic resin having rubber elasticity having a D-type Sure D-type hardness of 50 or less, particularly 40 or less based on ASTM D-2240. Even if it is essentially a hard polymer such as polyvinyl chloride, rubber elasticity can be manifested in combination with compounding agents such as plasticizers and softeners. Such a composition can also be used as a constituent material of the rubbery organic elastic intermediate layer.

  The rubber-like organic elastic intermediate layer is, for example, a method (coating method) in which a coating liquid containing a rubber-like organic elastic layer forming material such as natural rubber, synthetic rubber, or synthetic resin having rubber elasticity is applied onto a substrate, A method in which a film made of a rubbery organic elastic layer forming material or a laminated film in which a layer made of the rubbery organic elastic layer forming material is previously formed on one or more thermally expandable pressure-sensitive adhesive layers is bonded to a substrate (dry Laminating method), and a forming method such as a method of co-extruding a resin composition containing a constituent material of a base material and a resin composition containing the rubber-like organic elastic layer forming material (co-extrusion method).

  The rubbery organic elastic intermediate layer may be formed of a sticky substance mainly composed of natural rubber, synthetic rubber, or synthetic resin having rubber elasticity, and may be a foam film or the like mainly composed of such a component. It may be formed. Foaming is a conventional method, for example, a method using mechanical stirring, a method using a reaction product gas, a method using a foaming agent, a method for removing soluble substances, a method using a spray, a method for forming a syntactic foam, It can be performed by a sintering method or the like.

  The thickness of the intermediate layer such as the rubbery organic elastic intermediate layer is, for example, about 5 μm to 300 μm, preferably about 20 μm to 150 μm. In addition, when the intermediate layer is, for example, a rubber-like organic elastic intermediate layer, if the thickness of the rubber-like organic elastic intermediate layer is too thin, it is not possible to form a three-dimensional structural change after heating and foaming. Sexuality may worsen.

  The intermediate layer such as the rubbery organic elastic intermediate layer may be a single layer or may be composed of two or more layers.

  In the intermediate layer, various additives (for example, a colorant, a thickener, an extender, a filler, a tackifier, a plasticizer, an anti-aging agent, an oxidation agent, etc.) An inhibitor, a surfactant, a cross-linking agent, etc.).

  In the laminated body preparation step, a plurality of semiconductor chips 53 are arranged on the temporary fixing sheet 60 so that the circuit forming surface 53a faces the temporary fixing sheet 60 and temporarily fixed (see FIG. 1A). . A known device such as a flip chip bonder or a die bonder can be used for temporarily fixing the semiconductor chip 53.

  The layout and the number of arrangement of the semiconductor chips 53 can be set as appropriate according to the shape and size of the temporary fixing sheet 60, the number of target packages produced, and the like, for example, in a plurality of rows and a plurality of columns. They can be arranged in a matrix. The shape and size of the laminate 50 (temporary fixing sheet 60) in plan view are not particularly limited. For example, each side has a length of 300 mm or more, or each side has a length of 500 mm or more. Can be a rectangle. Heretofore, an example of the laminate preparation process has been shown.

[Step of preparing a sealing sheet]
In the method for manufacturing a semiconductor device according to the present embodiment, as shown in FIGS. 2A and 2B, a sealing sheet 40 is prepared (step B). The sealing sheet 40 may be prepared in a state of being laminated on a release liner 41 such as a polyethylene terephthalate (PET) film.

(Sealing sheet)
The sealing sheet 40 preferably has a minimum melt viscosity of 40 to 20000 Pa · s at 40 ° C. to 150 ° C., more preferably 100 to 15000 Pa · s, and 200 to 10,000 a · s. More preferably, it is within the range of s. When the minimum melt viscosity at 40 ° C. to 150 ° C. of the sealing sheet 40 is in the range of 50 Pa · s to 20000 Pa · s, the resin constituting the sealing sheet 40 when the sealing body 58 is formed is appropriately sheet Spread in the surface direction. Therefore, for example, in step C, a part of the laminated body 50 protrudes from the sealing sheet 40 in plan view (see FIG. 3B), or the semiconductor chip in which the sealing sheet 40 is not disposed on the upper surface. Even if there is 53 (not shown in this case), after the embedding step (step D), it can be sealed with a resin constituting the sealing sheet 40 spreading in the sheet surface direction.

  The constituent material of the sealing sheet 40 preferably includes an epoxy resin and a phenol resin as a curing agent. Thereby, favorable thermosetting is obtained.

  The epoxy resin is not particularly limited. For example, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, modified bisphenol A type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, dicyclopentadiene type Various epoxy resins such as an epoxy resin, a phenol novolac type epoxy resin, and a phenoxy resin can be used. These epoxy resins may be used alone or in combination of two or more.

  From the viewpoint of ensuring the toughness of the epoxy resin after curing and the reactivity of the epoxy resin, those having an epoxy equivalent of 150 to 250 and a softening point or melting point of 50 to 130 ° C. are preferably solid, and particularly reliable. From the viewpoint, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, and biphenyl type epoxy resin are more preferable.

  The phenol resin is not particularly limited as long as it causes a curing reaction with the epoxy resin. For example, a phenol novolac resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resole resin, or the like is used. These phenolic resins may be used alone or in combination of two or more.

  As the phenol resin, those having a hydroxyl equivalent weight of 70 to 250 and a softening point of 50 to 110 ° C. are preferably used from the viewpoint of reactivity with the epoxy resin, and from the viewpoint of high curing reactivity, phenol. A novolac resin can be suitably used. From the viewpoint of reliability, low hygroscopic materials such as phenol aralkyl resins and biphenyl aralkyl resins can also be suitably used.

  From the viewpoint of curing reactivity, the blending ratio of the epoxy resin and the phenol resin is blended so that the total number of hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin. Preferably, it is 0.9 to 1.2 equivalents.

  The total content of the epoxy resin and the phenol resin in the sealing sheet 40 is preferably 2.5% by weight or more, and more preferably 3.0% by weight or more. Adhesive force with respect to the semiconductor chip 53 can be obtained satisfactorily when it is 2.5% by weight or more. The total content of the epoxy resin and the phenol resin in the sealing sheet 40 is preferably 20% by weight or less, and more preferably 10% by weight or less. Hygroscopicity can be reduced as it is 20 weight% or less.

  The sealing sheet 40 may include a thermoplastic resin. Thereby, the handleability at the time of non-hardening and the low stress property of hardened | cured material are acquired.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Plastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, fluororesin, styrene-isobutylene-styrene block copolymer, etc. Is mentioned. These thermoplastic resins can be used alone or in combination of two or more. Of these, a styrene-isobutylene-styrene block copolymer is preferred from the viewpoint of low stress and low water absorption.

  Content of the thermoplastic resin in the sheet | seat 40 for sealing can be 1.5 weight% or more and 2.0 weight% or more. A softness | flexibility and flexibility are acquired as it is 1.5 weight% or more. The content of the thermoplastic resin in the sealing sheet 40 is preferably 6% by weight or less, and more preferably 4% by weight or less. Adhesiveness with the semiconductor chip 53 is favorable as it is 4 weight% or less.

  It is preferable that the sealing sheet 40 includes an inorganic filler.

  The inorganic filler is not particularly limited, and various conventionally known fillers can be used. For example, quartz glass, talc, silica (such as fused silica and crystalline silica), alumina, aluminum nitride, nitriding Examples thereof include silicon and boron nitride powders. These may be used alone or in combination of two or more. Among these, silica and alumina are preferable, and silica is more preferable because the linear expansion coefficient can be satisfactorily reduced.

As silica, silica powder is preferable, and fused silica powder is more preferable. Examples of the fused silica powder include spherical fused silica powder and crushed fused silica powder. From the viewpoint of fluidity, spherical fused silica powder is preferable. Especially, the thing of the range whose average particle diameter is 10-30 micrometers is preferable, and the thing of the range which is 15-25 micrometers is more preferable.
The average particle diameter can be derived, for example, by using a sample arbitrarily extracted from the population and measuring it using a laser diffraction / scattering particle size distribution measuring apparatus.

  It is preferable that content of the said inorganic filler in the sheet | seat 40 for sealing is 75 to 95 weight% with respect to the whole sheet | seat 40 for sealing, More preferably, it is 78 to 95 weight%. When the content of the inorganic filler is 75% by weight or more with respect to the entire sealing sheet 40, the thermal expansion coefficient can be suppressed to be low, so that mechanical breakdown due to thermal shock can be suppressed. As a result, on the other hand, when the content of the inorganic filler is 95% by weight or less with respect to the whole sealing sheet 40, flexibility, fluidity, and adhesiveness are further improved.

  It is preferable that the sealing sheet 40 includes a curing accelerator.

  The curing accelerator is not particularly limited as long as it cures the epoxy resin and the phenol resin, and examples thereof include organic phosphorus compounds such as triphenylphosphine and tetraphenylphosphonium tetraphenylborate; 2-phenyl-4, And imidazole compounds such as 5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Of these, 2-phenyl-4,5-dihydroxymethylimidazole is preferred because the curing reaction does not proceed rapidly even when the temperature rises during kneading, and the sealing sheet 40 can be satisfactorily produced.

  As for content of a hardening accelerator, 0.1-5 weight part is preferable with respect to a total of 100 weight part of an epoxy resin and a phenol resin.

  It is preferable that the sealing sheet 40 includes a flame retardant component. This can reduce the expansion of combustion when ignition occurs due to component short-circuiting or heat generation. As the flame retardant composition, for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complex metal hydroxides; phosphazene flame retardants, etc. should be used. Can do.

  From the viewpoint of exhibiting a flame retardant effect even in a small amount, the phosphorus element content contained in the phosphazene flame retardant is preferably 12% by weight or more.

  The content of the flame retardant component in the sealing sheet 40 is preferably 10% by weight or more, and more preferably 15% by weight or more in the total organic components (excluding inorganic fillers). A flame retardance is favorably acquired as it is 10 weight% or more. The content of the thermoplastic resin in the sealing sheet 40 is preferably 30% by weight or less, and more preferably 25% by weight or less. When the content is 30% by weight or less, there is a tendency that there is little decrease in physical properties of the cured product (specifically, physical properties such as glass transition temperature and high-temperature resin strength).

  It is preferable that the sealing sheet 40 includes a silane coupling agent. It does not specifically limit as a silane coupling agent, 3-Glycidoxypropyl trimethoxysilane etc. are mentioned.

  The content of the silane coupling agent in the sealing sheet 40 is preferably 0.1 to 3% by weight. When the content is 0.1% by weight or more, sufficient strength of the cured product can be obtained and the water absorption rate can be lowered. If it is 3% by weight or less, the outgas amount can be lowered.

  The sealing sheet 40 is preferably colored. Thereby, excellent marking properties and appearance can be exhibited, and a semiconductor device having an added-value appearance can be obtained. Since the colored sealing sheet 40 has excellent marking properties, it can be marked to give various information such as character information and graphic information. In particular, by controlling the coloring color, it is possible to visually recognize information (character information, graphic information, etc.) given by marking with excellent visibility. Furthermore, the sealing sheet 40 can be color-coded for each product. When the sealing sheet 40 is colored (when it is colorless and not transparent), it is not particularly limited as a color exhibited by coloring, but is preferably a dark color such as black, blue, red, etc. It is suitable that it is black.

In this embodiment, the dark, basically, L ^* a ^* b ^* L defined by the color system ^* is 60 or less (0 to 60) [preferably 50 or less (0 to 50), More preferably, it means a dark color of 40 or less (0 to 40)].

Also, black and basically, L ^* a ^* b ^* L defined by the color system ^* is 35 or less (0 to 35) [preferably 30 or less (0 to 30), more preferably 25 This means a black color which is (0-25) below. In black, a ^* and b ^* defined in the L ^* a ^* b ^* color system can be appropriately selected according to the value of L ^* . As a ^* and b ^* , for example, both are preferably −10 to 10, more preferably −5 to 5, particularly in the range of −3 to 3 (among others 0 or almost 0). Is preferred.

In this embodiment, L ^* , a ^* , and b ^* defined in the L ^* a ^* b ^* color system are color difference meters (trade name “CR-200” manufactured by Minolta Co .; color difference meter). It is calculated | required by measuring using. The L ^* a ^* b ^* color system is a color space recommended by the International Commission on Illumination (CIE) in 1976, and is a color space called the CIE 1976 (L ^* a ^* b ^* ) color system. It means that. The L ^* a ^* b ^* color system is defined in JISZ 8729 in the Japanese Industrial Standard.

  When the sealing sheet 40 is colored, a color material (colorant) can be used according to the target color. The sealing sheet of the present invention may have a single layer structure or may be composed of a plurality of layers, but at least a colorant is provided on the side opposite to the surface facing the temporary fixing sheet. It is preferable that it is added. Specifically, when the encapsulating sheet has a single layer configuration, the entire encapsulating sheet may contain a colorant uniformly, and the surface opposite to the surface facing the temporarily fixing sheet is colored. The coloring agent may be contained in a mode in which the agent is unevenly distributed. Moreover, when comprising from several layers, while adding a coloring agent to the layer on the surface opposite to the surface facing the temporarily fixing sheet, it is good also as not adding a coloring agent to the other layers. This embodiment demonstrates the case where the sheet | seat for sealing of this invention is 1 layer structure. This is because if the colorant is added to the surface opposite to the surface facing the temporarily fixing sheet in the sealing sheet, the visibility of the laser-marked portion can be improved. As such a color material, various dark color materials such as a black color material, a blue color material, and a red color material can be suitably used, and a black color material is particularly suitable. As the color material, any of a pigment, a dye and the like may be used. Color materials can be used alone or in combination of two or more. As the dye, any form of dyes such as acid dyes, reactive dyes, direct dyes, disperse dyes, and cationic dyes can be used. Also, the form of the pigment is not particularly limited, and can be appropriately selected from known pigments.

  In particular, when a dye is used as the coloring material, the dye is dissolved or evenly dispersed in the sealing sheet 40, so that the sealing sheet 40 having a uniform or almost uniform coloring density can be easily obtained. Can be manufactured, and marking properties and appearance can be improved.

  Although it does not restrict | limit especially as a black color material, For example, it can select suitably from an inorganic black pigment and a black dye. In addition, as a black color material, a color material mixture in which a cyan color material (blue-green color material), a magenta color material (red purple color material) and a yellow color material (yellow color material) are mixed. It may be. Black color materials can be used alone or in combination of two or more. Of course, the black color material can be used in combination with a color material other than black.

  Specifically, as the black color material, for example, carbon black (furnace black, channel black, acetylene black, thermal black, lamp black, etc.), graphite (graphite), copper oxide, manganese dioxide, azo pigment (azomethine) Azo black, etc.), aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite (nonmagnetic ferrite, magnetic ferrite, etc.), magnetite, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, complex oxide black Examples thereof include dyes and anthraquinone organic black dyes.

  In the present invention, as the black color material, C.I. I. Solvent Black 3, 7, 22, 27, 29, 34, 43, 70, C.I. I. Direct Black 17, 19, 19, 22, 32, 38, 51, 71, C.I. I. Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, 154C. I. Black dyes such as Disperse Black 1, 3, 10, and 24; I. Black pigments such as CI Pigment Black 1 and 7 can also be used.

  Examples of such a black color material include a product name “Oil Black BY”, a product name “OilBlack BS”, a product name “OilBlackHBB”, a product name “Oil Black803”, a product name “Oil Black860”, and a product name “Oil Black860”. “Oil Black 5970”, trade name “Oil Black 5906”, trade name “Oil Black 5905” (manufactured by Orient Chemical Co., Ltd.) and the like are commercially available.

  Examples of the color material other than the black color material include a cyan color material, a magenta color material, and a yellow color material. Examples of cyan color materials include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; I. Cyan dyes such as Acid Blue 6 and 45; I. Pigment Blue 1, 2, 3, 15, 15: 1, 15: 2, 15: 3, 15: 3, 15: 4, 15: 5, 15: 6, 16, 16, 17 17: 1, 18, 22, 25, 56, 60, 63, 65, 66; I. Bat Blue 4; 60, C.I. I. And cyan pigments such as CI Pigment Green 7.

  In the magenta color material, examples of the magenta dye include C.I. I. Solvent Red 1, 3, 8, 23, 24, 25, 27, 30, 30, 49, 52, 58, 63, 81, 82, 83, 84, the same 100, 109, 111, 121, 122; I. Disper thread 9; I. Solvent Violet 8, 13, 13, 21, and 27; C.I. I. Disperse violet 1; C.I. I. Basic Red 1, 2, 9, 9, 13, 14, 15, 17, 17, 18, 22, 23, 24, 27, 29, 32, 34, the same 35, 36, 37, 38, 39, 40; I. Basic Violet 1, 3, 7, 10, 14, 15, 21, 21, 25, 26, 27, 28 and the like.

  In the magenta color material, examples of the magenta pigment include C.I. I. Pigment Red 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 11, 12, 13, 14, 15, 16, 17, 18, 19, 21, 21, 22, 23, 30, 31, 32, 37, 38, 39, 40, 41, 42, 48: 1, 48: 2, 48: 3, 48: 4, 49, 49: 1, 50, 51, 52, 52: 2, 53: 1, 54, 55, 56, 57: 1, 58, 60, 60: 1, 63, 63: 1, 63: 2, 64, 64: 1, 67, 68, 81, 83, etc. 87, 88, 89, 90, 92, 101, 104, 105, 106, 108, 112, 114, 122, 123, 139, 144, 146 147, 149, 150, 151, 163, 166, 168, 170, 171, 172, 175, 176, 177, 178, 179, 184, 185 187, 190, 193, 202, 206, 207, 209, 219, 222, 224, 238, 245; I. C.I. Pigment Violet 3, 9, 19, 23, 31, 32, 33, 36, 38, 43, 50; I. Bat red 1, 2, 10, 13, 15, 23, 29, 35 and the like.

  Examples of yellow color materials include C.I. I. Solvent Yellow 19, 44, 77, 79, 81, 82, 93, 98, 103, 104, 112, 162 and the like yellow dyes; C.I. I. Pigment Orange 31 and 43; C.I. I. Pigment Yellow 1, 2, 3, 4, 5, 6, 7, 10, 10, 12, 13, 14, 15, 15, 16, 17, 23, 24, 34, 35, 37, 42, 53, 55, 65, 73, 74, 75, 81, 83, 93, 94, 95, 97, 98, 100, 101, 104, 108, 109, 110, 113, 114, 116, 117, 120, 128, 129, 133, 138, 139 147, 150, 151, 153, 154, 155, 156, 167, 172, 173, 180, 185, 195; I. Examples thereof include yellow pigments such as Vat Yellow 1, 3 and 20.

  Various color materials such as a cyan color material, a magenta color material, and a yellow color material can be used alone or in combination of two or more. When two or more kinds of various color materials such as a cyan color material, a magenta color material, and a yellow color material are used, the mixing ratio (or blending ratio) of these color materials is not particularly limited, and each color material. It can be selected as appropriate according to the type and the target color.

  The light transmittance (visible light transmittance) of visible light (wavelength: 380 nm to 800 nm) in the sealing sheet 40 is not particularly limited, but is preferably in the range of 20% to 0%, for example, and more preferably. Is 10% to 0%, particularly preferably 5% to 0%. By setting the visible light transmittance of the sealing sheet 40 to 20% or less, the print visibility can be improved. Further, it is possible to prevent an adverse effect on the semiconductor element due to the passage of light.

The visible light transmittance (%) of the sealing sheet 40 is such that a sealing sheet 40 having a thickness (average thickness): 10 μm is prepared, and the sealing sheet 40 (thickness: 10 μm) is given a trade name. Using “UV-2550” (manufactured by Shimadzu Corporation), visible light having a wavelength of 380 nm to 800 nm is irradiated with a predetermined intensity. The light intensity of visible light transmitted through the sealing sheet 40 by this irradiation can be measured and calculated by the following formula.
Visible light transmittance (%) = ((light intensity of visible light after passing through sealing sheet 40) / (initial light intensity of visible light)) × 100

In addition, the said calculation method of light transmittance (%) is applicable also to calculation of the light transmittance (%) of the sealing sheet 40 whose thickness is not 10 micrometers. Specifically, the absorbance A ₁₀ at 10 μm can be calculated as follows according to Lambert Beer's law.

A ₁₀ = α × L ₁₀ × C (1)
(Where L ₁₀ is the optical path length, α is the extinction coefficient, and C is the sample concentration)
Also, the absorbance A _X of a thickness X ([mu] m) can be represented by the following formula (2).
A _X = α × L _X × C (2)
Furthermore, the absorbance A ₂₀ at a thickness of 20 μm can be expressed by the following formula (3).
A ₁₀ = −log ₁₀ T ₁₀ (3)
_{(Wherein, T 10} represents a light transmittance at a thickness of 10 [mu] m)
From the equation (1) to (3), the absorbance _{A X} is
A _X = A ₁₀ × (L _X / L ₁₀ )
=-[Log ₁₀ (T ₁₀ )] × (L _X / L ₁₀ )
It can be expressed as. Thereby, the light transmittance T _X (%) at the thickness X (μm) can be calculated as follows.
T _X = 10 ^−AX
However, A _X = − [log ₁₀ (T ₁₀ )] × (L _X / L ₁₀ )

  In this embodiment, the thickness (average thickness) of the sealing sheet when determining the light transmittance (%) of the sealing sheet is 10 μm. However, the thickness of the sealing sheet is only sealed. It is the thickness at the time of obtaining the light transmittance (%) of the stop sheet, and does not mean that the sealing sheet in the present invention is 10 μm.

  The light transmittance (%) of the sealing sheet 40 is controlled by the type and content of the resin component, the type and content of the colorant (pigment, dye, etc.), the type and content of the filler, and the like. be able to.

  In addition to the above components, other additives can be appropriately blended in the sealing sheet 40 as necessary.

  Although the thickness of the sheet | seat 40 for sealing is not specifically limited, From a viewpoint used as a sheet | seat for sealing, and the viewpoint which can embed the semiconductor chip 53 suitably after an embedding process (process D), for example, 50 micrometers-2000 micrometers, Preferably, it can be 70 μm to 1200 μm, more preferably 100 μm to 700 μm.

  Although the manufacturing method of the sealing sheet 40 is not particularly limited, a method of preparing a kneaded product of the resin composition for forming the sealing sheet 40 and coating the obtained kneaded product, or the obtained kneading A method of plastically processing an object into a sheet is preferable. Thereby, since the sheet | seat 40 for sealing can be produced without using a solvent, it can suppress that the semiconductor chip 53 is influenced by the solvent which volatilized.

  Specifically, a kneaded product is prepared by melt-kneading each component described below with a known kneader such as a mixing roll, a pressure kneader, or an extruder, and the obtained kneaded product is coated or plastically processed into a sheet. Shape. As the kneading conditions, the temperature is preferably equal to or higher than the softening point of each component described above. For example, when considering the thermosetting property of 30 to 150 ° C. and epoxy resin, preferably 40 to 140 ° C., more preferably 60 to 120. ° C. The time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.

The kneading is preferably performed under reduced pressure conditions (under reduced pressure atmosphere). Thereby, while being able to deaerate, the penetration | invasion of the gas to a kneaded material can be prevented. The pressure under reduced pressure is preferably 0.1 kg / cm ² or less, more preferably 0.05 kg / cm ² or less. Although the minimum of the pressure under pressure reduction is not specifically limited, For example, it is 1 * 10 < ^-4 > kg / cm < ² > or more.

  When the kneaded material is applied to form the sealing sheet 40, the kneaded material after melt-kneading is preferably applied in a high temperature state without cooling. The coating method is not particularly limited, and examples thereof include a bar coating method, a knife coating method, and a slot die method. The temperature at the time of coating is preferably equal to or higher than the softening point of each of the above-mentioned components, and considering the thermosetting property and moldability of the epoxy resin, for example, 40 to 150 ° C, preferably 50 to 140 ° C, more preferably 70 to 120 ° C.

  When the kneaded product is plastically processed to form the sealing sheet 40, it is preferable that the kneaded product after melt-kneading is subjected to plastic processing in a high temperature state without cooling. The plastic working method is not particularly limited, and examples thereof include a flat plate pressing method, a T-die extrusion method, a screw die extrusion method, a roll rolling method, a roll kneading method, an inflation extrusion method, a coextrusion method, and a calendar molding method. The plastic processing temperature is preferably higher than the softening point of each component described above, and is 40 to 150 ° C., preferably 50 to 140 ° C., more preferably 70 to 120 ° C., considering the thermosetting property and moldability of the epoxy resin. is there.

  The sealing sheet 40 can also be obtained by adjusting a varnish by dissolving and dispersing a resin or the like for forming the sealing sheet 40 in an appropriate solvent, and coating the varnish.

[Step of arranging sealing sheet and laminate]
After the step of preparing the sealing sheet, as shown in FIGS. 3A and 3B, the laminate 50 is placed on the lower heating plate 62 with the surface on which the semiconductor chip 53 is temporarily fixed facing up. The sealing sheet 40 is disposed on the surface of the stacked body 50 on which the semiconductor chip 53 is temporarily fixed (step C). In this step, the laminated body 50 may be first disposed on the lower heating plate 62, and then the sealing sheet 40 may be disposed on the laminated body 50, and the sealing sheet 40 may be disposed on the laminated body 50. A laminate in which the laminate 50 and the sealing sheet 40 are laminated may be disposed on the lower heating plate 62 after being laminated first.

In the present embodiment, the distance d1 between the farthest two points on the outer periphery in plan view of the laminate 50 (see FIG. 1B) and the distance between the two furthest points on the outer periphery in plan view of the sealing sheet 40. A ratio d2 / d1 to d2 (see FIG. 2B) is 1.007 or more. Therefore, even if a positional shift occurs, it is possible to make it difficult to cause a sealing failure of the semiconductor chip 53. This point will be described below.
Conventionally, the size and shape of the laminated body in which a semiconductor chip is fixed on a support and the sealing sheet disposed thereon in plan view are the same. Therefore, in the process of disposing the sealing sheet on the laminate, a high degree of alignment accuracy is required. And when alignment is inadequate, especially the semiconductor chip arrange | positioned in the outer periphery vicinity may become a sealing defect.
The present inventors examined the deviation in the vertical and horizontal directions in the plan view and the deviation in the rotation direction in the plan view as the possibility of the positional deviation. As a result, it was found that the displacement distance between the center 50a of the laminated body 50 and the center 40a of the sealing sheet 40 was about 1.5 mm at the maximum as the vertical and horizontal deviation. Further, it has been found that the angle α of the shift in the rotational direction in plan view between the laminate 50 and the sealing sheet 40 is about 1 ° at the maximum.
Therefore, in the step of disposing the sealing sheet on the laminate (step C), even when both the vertical and horizontal shifts in the plan view and the rotation direction shifts in the plan view are maximized, the embedding is performed. The ratio d2 / d1 was set to 1.007 or more so that the semiconductor chip 53 can be embedded suitably after the step (step D). Note that the ratio d2 / d1 is such that after the step C, even if a part of the laminate protrudes from the sealing sheet in plan view, the entire laminate in plan view after the embedding step (step D). It was set as a numerical value that would not protrude from the sealing sheet.
Thereby, in the process C, a part of the laminated body 50 protrudes from the sealing sheet in a plan view (see FIG. 3B), or the semiconductor chip 53 in which the sealing sheet 40 is not disposed on the upper surface is formed. Even if there is (in this case, not shown), after the embedding step (step D), it is possible to seal with the resin constituting the sealing sheet 40 spread in the sheet surface direction by the press at the time of embedding. Become. The ratio d2 / d1 is preferably 1.008 or more. Further, the ratio d2 / d1 is preferably larger from the viewpoint of suitably performing sealing, but from the viewpoint of not wasting the material of the sealing sheet 40, for example, 1.030 or less, 1.025 or less, and the like. can do.
In addition, said d1 says the length of the diagonal line, when the shape of the laminated body 50 is a rectangle by planar view, and says the diameter when circular. Further, d2 refers to the length of the diagonal line when the shape of the temporary fixing member 60 is rectangular in plan view, and refers to the diameter when the shape is circular.

[Step of forming sealing body]
Next, as shown in FIGS. 4A and 4B, the semiconductor chip 53 is embedded in the sealing sheet 40 by hot pressing with the lower heating plate 62 and the upper heating plate 64, and the semiconductor chip. A sealing body 58 in which 53 is embedded in the sealing sheet 40 is formed (step D). The sealing sheet 40 functions as a sealing resin for protecting the semiconductor chip 53 and its accompanying elements from the external environment. Thereby, the sealing body 58 in which the semiconductor chip 53 temporarily fixed on the temporary fixing material 60 is embedded in the sealing sheet 40 is obtained. As described above, in the present embodiment, the distance d1 (see FIG. 1B) between the farthest two points on the outer periphery in plan view of the stacked body 50 and the farthest point on the outer periphery in plan view of the sealing sheet 40. The ratio d2 / d1 to the distance d2 between the two points (see FIG. 2B) is 1.007 or more. Therefore, even if a position shift occurs in the process C, it is possible to make it difficult for the semiconductor chip 53 to be sealed poorly.

As the heat pressing conditions for embedding the semiconductor chip 53 in the sealing sheet 40, the semiconductor chip 53 can be suitably embedded in the sealing sheet 40, and the resin constituting the sealing sheet 40 is excessive. The temperature is, for example, 40 to 150 ° C., preferably 60 to 120 ° C., and the pressure is, for example, 0.1 to 10 MPa, preferably 0.8. It is 5-8 MPa, and time is 0.3 to 10 minutes, for example, Preferably it is 0.5 to 5 minutes. Thereby, a semiconductor device in which the semiconductor chip 53 is embedded in the sealing sheet 40 can be obtained. Further, in consideration of improvement in adhesion and followability of the sealing sheet 40 to the semiconductor chip 53 and the temporary fixing material 60, it is preferable to press under reduced pressure conditions.
As the pressure reduction conditions, the pressure is, for example, 0.1 to 5 kPa, preferably 0.1 to 100 Pa, and the pressure reduction holding time (time from the pressure reduction start to the press start) is, for example, 5 to 600 seconds. Yes, preferably 10 to 300 seconds.

[Release liner peeling process]
Next, the release liner 41 is peeled (see FIG. 5).

[Thermosetting process]
Next, the sealing sheet 40 is thermally cured. Specifically, for example, the entire sealing body 58 in which the semiconductor chip 53 temporarily fixed on the temporary fixing material 60 is embedded in the sealing sheet 40 is heated.

  As the conditions for the thermosetting treatment, the heating temperature is preferably 100 ° C. or higher, more preferably 120 ° C. or higher. On the other hand, the upper limit of the heating temperature is preferably 200 ° C. or lower, more preferably 180 ° C. or lower. The heating time is preferably 10 minutes or more, more preferably 30 minutes or more. On the other hand, the upper limit of the heating time is preferably 180 minutes or less, more preferably 120 minutes or less. Moreover, you may pressurize as needed, Preferably it is 0.1 Mpa or more, More preferably, it is 0.5 Mpa or more. On the other hand, the upper limit is preferably 10 MPa or less, more preferably 5 MPa or less.

[Heat-expandable pressure-sensitive adhesive layer peeling step]
Next, as shown in FIG. 6, the temporary fixing material 60 is heated to thermally expand the heat-expandable pressure-sensitive adhesive layer 60a, thereby peeling between the heat-expandable pressure-sensitive adhesive layer 60a and the sealing body 58. Do. Alternatively, a procedure in which peeling is performed at the interface between the support base 60b and the thermally expandable pressure-sensitive adhesive layer 60a and then peeling is performed by thermal expansion at the interface between the thermally expandable pressure-sensitive adhesive layer 60a and the sealing body 58 is also suitable. Can be adopted. In either case, the heat-expandable pressure-sensitive adhesive layer 60a is heated and thermally expanded to reduce the adhesive force, thereby easily peeling at the interface between the heat-expandable pressure-sensitive adhesive layer 60a and the sealing body 58. Can be done. As the conditions for thermal expansion, the conditions in the above-mentioned column “Thermal expansion method for thermally expandable pressure-sensitive adhesive layer” can be preferably employed. In particular, it is preferable that the heat-expandable pressure-sensitive adhesive layer has a structure that does not peel off by heating in the thermosetting step but peels off by heating in the heat-expandable pressure-sensitive adhesive layer peeling step.

[Process of grinding sealing sheet]
Next, as necessary, as shown in FIG. 7, the sealing sheet 40 of the sealing body 58 is ground to expose the back surface 53 c of the semiconductor chip 53. The method for grinding the sealing sheet 40 is not particularly limited, and examples thereof include a grinding method using a grindstone that rotates at high speed.

(Rewiring process)
In the present embodiment, it is preferable to further include a rewiring forming step of forming a rewiring 69 on the circuit forming surface 53 a of the semiconductor chip 53 of the sealing body 58. In the rewiring forming step, after the temporary fixing material 60 is peeled off, a rewiring 69 connected to the exposed semiconductor chip 53 is formed on the sealing body 58 (see FIG. 8).

  As a method of forming the rewiring, for example, a metal seed layer is formed on the exposed semiconductor chip 53 by using a known method such as a vacuum film forming method, and the rewiring is performed by a known method such as a semi-additive method. Wiring 69 can be formed.

  Thereafter, an insulating layer such as polyimide or PBO may be formed on the rewiring 69 and the sealing body 58.

(Bump formation process)
Next, bumping processing for forming bumps 67 on the formed rewiring 69 may be performed (see FIG. 8). The bumping process can be performed by a known method such as a solder ball or solder plating.

(Dicing process)
Finally, dicing is performed on the laminated body including elements such as the semiconductor chip 53, the sealing sheet 40, and the rewiring 69 (see FIG. 9). Thereby, the semiconductor device 59 in which the wiring is drawn outside the chip region can be obtained.

  In the present invention, it suffices that only the process A, the process B, the process C, and the process D are performed, and other processes are optional and may or may not be performed.

  In the above-described embodiment, the case where the “laminated body in which the semiconductor chip is fixed on the support” in the present invention is the “laminated body in which the semiconductor chip is temporarily fixed on the temporary fixing material” has been described. That is, the case where the “support” of the present invention is a temporary fixing material has been described. However, the “laminate” in the present invention is not limited to this example, and any semiconductor chip may be fixed to a support having a certain degree of strength. As another example of the “laminated body” in the present invention, for example, “a laminated body in which a semiconductor chip is flip-chip bonded to a circuit forming surface of a semiconductor wafer” can be cited.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded. In each example, all parts are based on weight unless otherwise specified.

(Production Example 1)
<Preparation of sealing sheet>
100 parts of epoxy resin (trade name “YSLV-80XY”, manufactured by Nippon Steel Chemical Co., Ltd.), 55 parts of phenol resin (trade name “MEH-7500-3S”, manufactured by Meiwa Kasei Co., Ltd.), spherical filler (trade name) "FB-9454FC", manufactured by Denki Kagaku Kogyo Co., Ltd. 1400 parts, silane coupling agent (trade name "KBM-403", manufactured by Shin-Etsu Chemical Co., Ltd.) 15 parts, carbon black (trade name "# 20", manufactured by Mitsubishi Chemical Corporation) ) 7 parts, 1.5 parts of a curing accelerator (trade name “2PHZ-PW”, manufactured by Shikoku Kasei Kogyo Co., Ltd.) is blended, and at 60 ° C. for 2 minutes, 80 ° C. for 2 minutes, 120 ° C. for 6 minutes, The mixture was heated in this order and melt-kneaded under reduced pressure (0.01 kg / cm ² ) for a total of 10 minutes to prepare a kneaded product. Subsequently, the obtained kneaded material was coated on a release-treated film by a slot die method under a condition of 120 ° C. to form a sheet, and a sealing sheet A having a thickness of 400 μm, a length of 353 mm, and a width of 453 mm Was made. As the release treatment film, a polyethylene terephthalate film having a thickness of 50 μm subjected to silicone release treatment was used.

(Production Example 2)
<Preparation of sealing sheet>
100 parts of epoxy resin (trade name “YSLV-80XY”, manufactured by Nippon Steel Chemical Co., Ltd.), 55 parts of phenol resin (trade name “MEH-7500-3S”, manufactured by Meiwa Kasei Co., Ltd.), spherical filler (trade name) 1FB parts of “FB-9454FC” (manufactured by Denki Kagaku Kogyo Co., Ltd.) and 15 parts of silane coupling agent (trade name “KBM-403”, manufactured by Shin-Etsu Chemical Co., Ltd.) are organically added so that the solid content concentration becomes 95%. The solvent was added to MEK (methyl ethyl ketone) and stirred. Stirring was performed for 5 minutes at 800 rpm rotation using a rotation and revolution mixer (manufactured by Sinky Co., Ltd.). Thereafter, 7 parts of carbon black (trade name “# 20”, manufactured by Mitsubishi Chemical Corporation) and 1.5 parts of a curing accelerator (trade name “2PHZ-PW”, manufactured by Shikoku Kasei Kogyo Co., Ltd.) are further blended, and the solid content concentration MEK was added so that it might become 90%, and also it stirred for 3 minutes at 800 rpm, and obtained the coating liquid.
Thereafter, the coating solution was applied on a polyethylene terephthalate film having a thickness of 50 μm subjected to silicone release treatment, and dried at 120 ° C. for 3 minutes to prepare a resin sheet having a thickness of 100 μm. Furthermore, the produced resin sheet was bonded at 90 ° C. with a roll laminator to produce a sealing sheet B having a thickness of 400 μm, a length of 356 mm, and a width of 456 mm.

(Production Example 3)
<Preparation of sealing sheet>
100 parts of epoxy resin (trade name “YSLV-80XY”, manufactured by Nippon Steel Chemical Co., Ltd.), 55 parts of phenol resin (trade name “MEH-7500-3S”, manufactured by Meiwa Kasei Co., Ltd.), spherical filler (trade name) "FB-9454FC", manufactured by Denki Kagaku Kogyo Co., Ltd. 1400 parts, silane coupling agent (trade name "KBM-403", manufactured by Shin-Etsu Chemical Co., Ltd. 15 parts, carbon black (trade name "# 20", manufactured by Mitsubishi Chemical Corporation) 7 parts, 1.5 parts of curing accelerator (trade name “2PHZ-PW”, manufactured by Shikoku Kasei Kogyo Co., Ltd.) are blended, and this is carried out at 60 ° C. for 2 minutes, 80 ° C. for 2 minutes, and 120 ° C. for 6 minutes. The mixture was heated in order and melt-kneaded for 10 minutes in total under reduced pressure conditions (0.01 kg / cm ² ) to prepare a kneaded product. The mold release process The film was coated on a film to form a sheet, and a sealing sheet C having a thickness of 400 μm, a length of 360 mm, and a width of 460 mm was prepared as the release film. A polyethylene terephthalate film was used.

(Production Example 4)
<Preparation of sealing sheet>
100 parts of epoxy resin (trade name “YSLV-80XY”, manufactured by Nippon Steel Chemical Co., Ltd.), 55 parts of phenol resin (trade name “MEH-7500-3S”, manufactured by Meiwa Kasei Co., Ltd.), spherical filler (trade name) "FB-9454FC", manufactured by Denki Kagaku Kogyo Co., Ltd. 1400 parts, silane coupling agent (trade name "KBM-403", manufactured by Shin-Etsu Chemical Co., Ltd. 15 parts, carbon black (trade name "# 20", manufactured by Mitsubishi Chemical Corporation) 7 parts, 1.5 parts of curing accelerator (trade name “2PHZ-PW”, manufactured by Shikoku Kasei Kogyo Co., Ltd.) are blended, and this is carried out at 60 ° C. for 2 minutes, 80 ° C. for 2 minutes, and 120 ° C. for 6 minutes. The mixture was heated in order and melt-kneaded for 10 minutes in total under reduced pressure conditions (0.01 kg / cm ² ) to prepare a kneaded product. The mold release process The film was coated on a film to form a sheet, and a sealing sheet D having a thickness of 400 μm, a length of 350 mm, and a width of 450 mm was prepared as the release film. A polyethylene terephthalate film was used.

(Production Example 5)
<Preparation of sealing sheet>
100 parts of epoxy resin (trade name “YSLV-80XY”, manufactured by Nippon Steel Chemical Co., Ltd.), 55 parts of phenol resin (trade name “MEH-7500-3S”, manufactured by Meiwa Kasei Co., Ltd.), spherical filler (trade name) "FB-9454FC", manufactured by Denki Kagaku Kogyo Co., Ltd. 1400 parts, silane coupling agent (trade name "KBM-403", manufactured by Shin-Etsu Chemical Co., Ltd. 15 parts, carbon black (trade name "# 20", manufactured by Mitsubishi Chemical Corporation) 7 parts, 1.5 parts of curing accelerator (trade name “2PHZ-PW”, manufactured by Shikoku Kasei Kogyo Co., Ltd.) are blended, and this is carried out at 60 ° C. for 2 minutes, 80 ° C. for 2 minutes, 120 ° C. for 6 minutes, The mixture was heated in order and melt-kneaded for 10 minutes in total under reduced pressure conditions (0.01 kg / cm ² ) to prepare a kneaded product. The mold release process The film was coated on a film to form a sheet, and a sealing sheet E having a thickness of 400 μm, a length of 340 mm, and a width of 440 mm was prepared as the release film. A polyethylene terephthalate film was used.

(Measurement of minimum melt viscosity)
The minimum melt viscosity at 25 ° C. to 200 ° C. when each sample (sealing sheets A to E) is measured using a viscoelasticity measuring device ARES (manufactured by Rheometrics Scientific) is the minimum melt viscosity. did. The measurement conditions were a heating rate of 10 ° C./min, strain: 20%, frequency: 0.1 Hz, and plate diameter: 25 mm. As a result, the samples of the sealing sheets A and C to E were 300 Pa · s. Further, the sample of the sealing sheet B was 250 Pa · s.

<Preparation of sealing body and evaluation of sealing performance>
Semiconductor chip (7mm square, thickness 300μm) is 14 × 18 in length, chip mounting glass mounted at 16.5mm in chip mounting interval (distance between chip edge and chip end), chip laminated glass of 450mm in width and 450mm in width Prepared a career.
Next, the sealing sheet A is placed on the chip laminated glass carrier, and the center of the sealing sheet is 1.5 mm downward from the center of the chip laminated glass carrier, 1.5 mm to the left, and once clockwise. They were placed so as to face each other. This was used as a sample according to Example 1.
Further, the sealing sheet B is shifted on the above-mentioned chip-laminated glass carrier with the center of the sealing sheet 1.5 mm downward from the center of the chip-laminated glass carrier, 1.5 mm to the left, and once clockwise. Arranged so as to face each other. This was used as a sample according to Example 2.
Further, the sealing sheet C is shifted on the above-mentioned chip laminated glass carrier with the center of the sealing sheet 1.5 mm downward from the center of the chip laminated glass carrier, 1.5 mm to the left, and once clockwise. Arranged so as to face each other. This was used as a sample according to Example 3.
Further, the sealing sheet D is shifted on the above-mentioned chip laminated glass carrier by 1.5 degrees downward from the center of the chip laminated glass carrier, 1.5 mm to the left, and clockwise once. Arranged so as to face each other. This was used as a sample according to Comparative Example 1.
Further, the sealing sheet E is shifted on the above-mentioned chip-laminated glass carrier with the center of the sealing sheet 1.5 mm downward from the center of the chip-laminated glass carrier, 1.5 mm to the left, and once clockwise. Arranged so as to face each other. This was used as a sample according to Comparative Example 2.
Next, using a vacuum press apparatus (trade name “VACUUM ACE”, manufactured by Mikado Technos), heat-pressed at a vacuum pressure of 10 Pa, a press pressure of 0.5 MPa, a press temperature of 90 ° C., and a press time of 60 seconds, and the sealing thickness A 400 μm sealing body was obtained. Thereafter, the resin protruding from the wafer edge was cut with a trimming knife. Thereby, the sealing body for evaluation is produced, and when the chip laminated glass carrier protrudes from the end portion of the sealing body, or the thickness of the end portion of the sealing body is 30 μm or more as compared with the central portion of the sealing body. The case where it was thin was evaluated as x, and the case where no protrusion of the chip laminated glass carrier end or reduction in thickness of 30 μm or more was observed was evaluated as ◯. The results are shown in Table 1. In Table 1, the ratio d2 / d1 is also shown.

40 Sealing sheet 50 Laminate 53 Semiconductor chip 58 Sealing body 59 Semiconductor device 60 Temporary fixing material

Claims (3)

Preparing a laminate in which a semiconductor chip is fixed on a support; and
Step B for preparing a sealing sheet;
A step C of disposing the sealing sheet on the semiconductor chip of the laminate;
A step D of embedding the semiconductor chip in the sealing sheet and forming a sealing body in which the semiconductor chip is embedded in the sealing sheet;
A ratio d2 / d1 between a distance d1 between two furthest points on the outer periphery in plan view of the support and a distance d2 between two furthest points on the outer periphery in plan view of the sealing sheet is 1.007 or more. A method for manufacturing a semiconductor device, wherein:   2. The method of manufacturing a semiconductor device according to claim 1, wherein the sealing sheet has a minimum melt viscosity at 40 ° C. to 150 ° C. of 50 Pa · s to 20000 Pa · s.   In the step D, hot press conditions for embedding the semiconductor chip in the sealing sheet are within a temperature range of 40 to 150 ° C. and within a range of 0.1 to 10 MPa. Item 3. A method for manufacturing a semiconductor device according to Item 1 or 2.

Images