JP2015115402A - 導電体パターンの形成方法および半導体装置の製造方法 - Google Patents

導電体パターンの形成方法および半導体装置の製造方法 Download PDF

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Publication number
JP2015115402A
JP2015115402A JP2013255211A JP2013255211A JP2015115402A JP 2015115402 A JP2015115402 A JP 2015115402A JP 2013255211 A JP2013255211 A JP 2013255211A JP 2013255211 A JP2013255211 A JP 2013255211A JP 2015115402 A JP2015115402 A JP 2015115402A
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Japan
Prior art keywords
layer
mask
conductor
film
forming
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Pending
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JP2013255211A
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English (en)
Japanese (ja)
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JP2015115402A5 (enExample
Inventor
慶大 鳥居
Keita Torii
慶大 鳥居
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013255211A priority Critical patent/JP2015115402A/ja
Priority to US14/564,622 priority patent/US9466485B2/en
Publication of JP2015115402A publication Critical patent/JP2015115402A/ja
Publication of JP2015115402A5 publication Critical patent/JP2015115402A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Drying Of Semiconductors (AREA)
JP2013255211A 2013-12-10 2013-12-10 導電体パターンの形成方法および半導体装置の製造方法 Pending JP2015115402A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013255211A JP2015115402A (ja) 2013-12-10 2013-12-10 導電体パターンの形成方法および半導体装置の製造方法
US14/564,622 US9466485B2 (en) 2013-12-10 2014-12-09 Conductor pattern forming method, and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013255211A JP2015115402A (ja) 2013-12-10 2013-12-10 導電体パターンの形成方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2015115402A true JP2015115402A (ja) 2015-06-22
JP2015115402A5 JP2015115402A5 (enExample) 2017-01-26

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JP2013255211A Pending JP2015115402A (ja) 2013-12-10 2013-12-10 導電体パターンの形成方法および半導体装置の製造方法

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Country Link
US (1) US9466485B2 (enExample)
JP (1) JP2015115402A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018191338A1 (en) * 2017-04-11 2018-10-18 Tokyo Electron Limited Method for anisotropic dry etching of titanium-containing films
JP2019161186A (ja) * 2018-03-16 2019-09-19 東芝メモリ株式会社 基板処理装置、基板処理方法、および半導体装置の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102569388B1 (ko) * 2016-06-21 2023-08-24 에스케이하이닉스 주식회사 위상 차 검출부들을 가진 이미지 센서
CN106842685A (zh) 2017-03-16 2017-06-13 惠科股份有限公司 一种显示面板及制造方法和显示装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH113892A (ja) * 1997-06-11 1999-01-06 Ricoh Co Ltd 半導体装置の製造方法
JP2000216161A (ja) * 1999-01-25 2000-08-04 Nec Corp 無機反射防止膜を使った配線形成方法
JP2006093590A (ja) * 2004-09-27 2006-04-06 Renesas Technology Corp 半導体装置の製造方法及びマスク材
JP2007081383A (ja) * 2005-08-15 2007-03-29 Fujitsu Ltd 微細構造の製造方法
JP2007115889A (ja) * 2005-10-20 2007-05-10 Oki Electric Ind Co Ltd 半導体装置の製造方法
US20100000969A1 (en) * 2008-07-07 2010-01-07 Macronix International Co., Ltd. Patterning method
JP2013084742A (ja) * 2011-10-07 2013-05-09 Canon Inc 光電変換装置および撮像システム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07235539A (ja) 1994-02-25 1995-09-05 Sony Corp 積層配線およびそのドライエッチング方法
JP2006086500A (ja) 2004-08-18 2006-03-30 Toshiba Corp 半導体装置の製造方法
JP2014086500A (ja) * 2012-10-22 2014-05-12 Tokyo Electron Ltd 銅層をエッチングする方法、及びマスク

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH113892A (ja) * 1997-06-11 1999-01-06 Ricoh Co Ltd 半導体装置の製造方法
JP2000216161A (ja) * 1999-01-25 2000-08-04 Nec Corp 無機反射防止膜を使った配線形成方法
JP2006093590A (ja) * 2004-09-27 2006-04-06 Renesas Technology Corp 半導体装置の製造方法及びマスク材
JP2007081383A (ja) * 2005-08-15 2007-03-29 Fujitsu Ltd 微細構造の製造方法
JP2007115889A (ja) * 2005-10-20 2007-05-10 Oki Electric Ind Co Ltd 半導体装置の製造方法
US20100000969A1 (en) * 2008-07-07 2010-01-07 Macronix International Co., Ltd. Patterning method
JP2013084742A (ja) * 2011-10-07 2013-05-09 Canon Inc 光電変換装置および撮像システム

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018191338A1 (en) * 2017-04-11 2018-10-18 Tokyo Electron Limited Method for anisotropic dry etching of titanium-containing films
JP2019161186A (ja) * 2018-03-16 2019-09-19 東芝メモリ株式会社 基板処理装置、基板処理方法、および半導体装置の製造方法
JP7037397B2 (ja) 2018-03-16 2022-03-16 キオクシア株式会社 基板処理装置、基板処理方法、および半導体装置の製造方法

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US20150162375A1 (en) 2015-06-11

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