JP2015088198A5 - - Google Patents
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- JP2015088198A5 JP2015088198A5 JP2013223981A JP2013223981A JP2015088198A5 JP 2015088198 A5 JP2015088198 A5 JP 2015088198A5 JP 2013223981 A JP2013223981 A JP 2013223981A JP 2013223981 A JP2013223981 A JP 2013223981A JP 2015088198 A5 JP2015088198 A5 JP 2015088198A5
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- JP
- Japan
- Prior art keywords
- switch
- capacitor
- electrode
- circuit according
- electrically connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003990 capacitor Substances 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 2
Claims (9)
前記第一スイッチの他端と前記第一容量第一電極と前記第二容量第二電極と前記論理部の入力とが電気的に接続され(第一ノードと称する)、
前記論理部の出力と前記第二容量第一電極とが電気的に接続される(第二ノードと称する)事を特徴とする記憶回路。 A first switch having one end electrically connected to the input section, a first capacitor element having a first capacitor first electrode and a first capacitor second electrode, a second capacitor first electrode and a second capacitor second A second capacitive element having an electrode, and a logic unit,
The other end of the first switch, the first capacitor first electrode, the second capacitor second electrode, and the input of the logic unit are electrically connected (referred to as a first node),
An output of the logic unit and the second capacitor first electrode are electrically connected (referred to as a second node).
前記第二スイッチの一端は前記第一ノードに電気的に接続され、
前記第二スイッチの他端は前記第二ノードに電気的に接続される事を特徴とする請求項1又は2に記載の記憶回路。 With a second switch,
One end of the second switch is electrically connected to the first node;
3. The memory circuit according to claim 1, wherein the other end of the second switch is electrically connected to the second node.
請求項1乃至5のいずれか一項に記載の記憶回路を備え、
前記記憶回路は、前記信号線に供給する画像信号を記憶する事を特徴とする電気光学装置。 A signal line;
A storage circuit according to any one of claims 1 to 5 ,
The electro-optical device , wherein the storage circuit stores an image signal supplied to the signal line .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013223981A JP6135459B2 (en) | 2013-10-29 | 2013-10-29 | Memory circuit, electro-optical device, semiconductor memory device, and electronic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013223981A JP6135459B2 (en) | 2013-10-29 | 2013-10-29 | Memory circuit, electro-optical device, semiconductor memory device, and electronic apparatus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015088198A JP2015088198A (en) | 2015-05-07 |
| JP2015088198A5 true JP2015088198A5 (en) | 2016-08-25 |
| JP6135459B2 JP6135459B2 (en) | 2017-05-31 |
Family
ID=53050820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013223981A Expired - Fee Related JP6135459B2 (en) | 2013-10-29 | 2013-10-29 | Memory circuit, electro-optical device, semiconductor memory device, and electronic apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6135459B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6010912A (en) * | 1983-06-30 | 1985-01-21 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
| CN101542560A (en) * | 2006-11-28 | 2009-09-23 | 皇家飞利浦电子股份有限公司 | Active matrix array device |
| JP5182291B2 (en) * | 2007-11-12 | 2013-04-17 | 富士通セミコンダクター株式会社 | Semiconductor device |
| US8982607B2 (en) * | 2011-09-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and signal processing circuit |
-
2013
- 2013-10-29 JP JP2013223981A patent/JP6135459B2/en not_active Expired - Fee Related
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