JP2015088198A5 - - Google Patents

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Publication number
JP2015088198A5
JP2015088198A5 JP2013223981A JP2013223981A JP2015088198A5 JP 2015088198 A5 JP2015088198 A5 JP 2015088198A5 JP 2013223981 A JP2013223981 A JP 2013223981A JP 2013223981 A JP2013223981 A JP 2013223981A JP 2015088198 A5 JP2015088198 A5 JP 2015088198A5
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Japan
Prior art keywords
switch
capacitor
electrode
circuit according
electrically connected
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JP2013223981A
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Japanese (ja)
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JP6135459B2 (en
JP2015088198A (en
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Priority to JP2013223981A priority Critical patent/JP6135459B2/en
Priority claimed from JP2013223981A external-priority patent/JP6135459B2/en
Publication of JP2015088198A publication Critical patent/JP2015088198A/en
Publication of JP2015088198A5 publication Critical patent/JP2015088198A5/ja
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Claims (9)

一端が入力部に電気的に接続された第一スイッチと、第一容量第一電極と第一容量第二電極とを有する第一容量素子と、第二容量第一電極と第二容量第二電極とを有する第二容量素子と、論理部と、を備え、
前記第一スイッチの他端と前記第一容量第一電極と前記第二容量第二電極と前記論理部の入力とが電気的に接続され(第一ノードと称する)、
前記論理部の出力と前記第二容量第一電極とが電気的に接続される(第二ノードと称する)事を特徴とする記憶回路。
A first switch having one end electrically connected to the input section, a first capacitor element having a first capacitor first electrode and a first capacitor second electrode, a second capacitor first electrode and a second capacitor second A second capacitive element having an electrode, and a logic unit,
The other end of the first switch, the first capacitor first electrode, the second capacitor second electrode, and the input of the logic unit are electrically connected (referred to as a first node),
An output of the logic unit and the second capacitor first electrode are electrically connected (referred to as a second node).
前記論理部はバッファー回路を有する事を特徴とする請求項1に記載の記憶回路。   The memory circuit according to claim 1, wherein the logic unit includes a buffer circuit. 第二スイッチを備え、
前記第二スイッチの一端は前記第一ノードに電気的に接続され、
前記第二スイッチの他端は前記第二ノードに電気的に接続される事を特徴とする請求項1又は2に記載の記憶回路。
With a second switch,
One end of the second switch is electrically connected to the first node;
3. The memory circuit according to claim 1, wherein the other end of the second switch is electrically connected to the second node.
前記第二スイッチがオフ状態にある期間に前記第一スイッチはオン状態とされる事を特徴とする請求項3に記載の記憶回路。   4. The memory circuit according to claim 3, wherein the first switch is turned on during a period in which the second switch is in an off state. 前記第一スイッチがオフ状態にある期間に前記第二スイッチはオン状態とされる事を特徴とする請求項3又は4に記載の記憶回路。   5. The memory circuit according to claim 3, wherein the second switch is turned on while the first switch is in an off state. 6. 信号線と、
請求項1乃至5のいずれか一項に記載の記憶回路を備え
前記記憶回路は、前記信号線に供給する画像信号を記憶する事を特徴とする電気光学装置。
A signal line;
A storage circuit according to any one of claims 1 to 5 ,
The electro-optical device , wherein the storage circuit stores an image signal supplied to the signal line .
請求項6に記載の電気光学装置を備えた事を特徴とする電子機器。   An electronic apparatus comprising the electro-optical device according to claim 6. 請求項1乃至5のいずれか一項に記載の記憶回路を備えた事を特徴とする半導体記憶装置。   A semiconductor memory device comprising the memory circuit according to claim 1. 請求項8に記載の半導体記憶装置を備えた事を特徴とする電子機器。   An electronic apparatus comprising the semiconductor memory device according to claim 8.
JP2013223981A 2013-10-29 2013-10-29 Memory circuit, electro-optical device, semiconductor memory device, and electronic apparatus Expired - Fee Related JP6135459B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013223981A JP6135459B2 (en) 2013-10-29 2013-10-29 Memory circuit, electro-optical device, semiconductor memory device, and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013223981A JP6135459B2 (en) 2013-10-29 2013-10-29 Memory circuit, electro-optical device, semiconductor memory device, and electronic apparatus

Publications (3)

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JP2015088198A JP2015088198A (en) 2015-05-07
JP2015088198A5 true JP2015088198A5 (en) 2016-08-25
JP6135459B2 JP6135459B2 (en) 2017-05-31

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Family Applications (1)

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JP2013223981A Expired - Fee Related JP6135459B2 (en) 2013-10-29 2013-10-29 Memory circuit, electro-optical device, semiconductor memory device, and electronic apparatus

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Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010912A (en) * 1983-06-30 1985-01-21 Mitsubishi Electric Corp Semiconductor integrated circuit
CN101542560A (en) * 2006-11-28 2009-09-23 皇家飞利浦电子股份有限公司 Active matrix array device
JP5182291B2 (en) * 2007-11-12 2013-04-17 富士通セミコンダクター株式会社 Semiconductor device
US8982607B2 (en) * 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit

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