JP2015087652A - Manufacturing method of liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce display unevenness due to forming failure of an orientation film.SOLUTION: The manufacturing method of the liquid crystal display device LCD includes a step to drip an orientation film material onto substrate 20 from a head 12 while moving the substrate 20 in a column direction in which a data line DL extends with respect to the head 12 provided to an ink jet device 10, which discharges the orientation film material.

Description

  The present invention relates to a method for manufacturing a liquid crystal display device, and more particularly to a method for forming an alignment film.

  In the liquid crystal display device, an alignment film for aligning liquid crystal molecules is formed on the side facing the liquid crystal layer in each of a pair of substrates arranged to face each other via the liquid crystal layer. Conventionally, it is known that when the film thickness of the alignment film varies, the display quality deteriorates (for example, display unevenness). Various methods for forming an alignment film for reducing display unevenness caused by variations in the film thickness of the alignment film have been proposed.

  For example, Patent Document 1 discloses a method for forming an alignment film using an inkjet method. The inkjet system is a system in which an alignment film is formed by dropping an alignment film material from the inkjet nozzle onto the entire substrate surface. In the method disclosed in Patent Document 1, the display unevenness is reduced by adjusting the moving direction of the inkjet nozzle that drops the alignment film material.

WO2010 / 058718 JP 2010-102286 A

  However, in the method disclosed in Patent Document 1, a phenomenon occurs in which the alignment film material dropped from the inkjet nozzle flows into a contact hole formed on the substrate. This phenomenon is particularly prominent when the contact hole region is relatively large with respect to the pixel region as disclosed in Japanese Patent Application Laid-Open No. 2004-228688. When the alignment film material flows into the contact hole, a region where the alignment film is not properly formed is generated, resulting in display unevenness.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method of manufacturing a liquid crystal display device that can reduce display unevenness due to poor alignment film formation.

  In order to solve the above problems, a method of manufacturing a liquid crystal display device according to the present invention includes a plurality of data lines extending in a first direction on a substrate and a second direction different from the first direction. A plurality of gate lines, a thin film transistor connected to the data line and the gate line, a pixel electrode electrically connected to a conductive electrode of the thin film transistor through a contact hole, and an alignment film covering the pixel electrode , Wherein the substrate and a dropping device for dropping the material of the alignment film on the substrate by an inkjet method are relatively moved in the first direction. And a step of dropping the material of the alignment film onto the substrate.

  In the method for manufacturing a liquid crystal display device according to the present invention, the above steps may be repeated a plurality of times.

  In the method for manufacturing a liquid crystal display device according to the present invention, the pixels in a plurality of pixels in which one pixel defined by two adjacent data lines and two adjacent gate lines are arranged in a matrix. The alignment film material may be dropped onto the substrate at substantially the same pitch as the arrangement pitch in the first direction or at a pitch smaller than the arrangement pitch.

  In the method for manufacturing a liquid crystal display device according to the present invention, the pitch in the second direction of the dropping position of the material for the alignment film on the substrate is larger than the arrangement pitch in the first direction in the plurality of pixels. Also good.

  The method for manufacturing a liquid crystal display device according to the present invention includes a step of forming the gate line on the substrate, a step of forming a first insulating film so as to cover the gate line, and a step on the first insulating film. Forming a conductive electrode of the data line and the thin film transistor; forming a second insulating film so as to cover the conductive electrode of the data line and the thin film transistor; and contacting the contact with the second insulating film. The method may further include a step of forming a hole, and a step of forming the pixel electrode on the second insulating film and in the contact hole.

  In the method for manufacturing a liquid crystal display device according to the present invention, the second insulating film may be made of an organic material.

  The method for manufacturing a liquid crystal display device according to the present invention may further include a step of dropping the material of the alignment film on the substrate and then sliding the substrate in the second direction.

  The method for manufacturing a liquid crystal display device according to the present invention may further include a step of performing photo-alignment processing on the alignment film.

  According to the method for manufacturing a liquid crystal display device according to the present invention, the alignment film is formed over the entire image display region. Therefore, display unevenness due to poor alignment film formation can be reduced.

1 is a diagram illustrating an overall configuration of a liquid crystal display device according to an embodiment of the present invention. It is a top view of the pixel in the liquid crystal display device shown in FIG. It is AA 'sectional drawing of FIG. It is a schematic diagram which shows the structure of an inkjet apparatus. It is a top view which shows the formation method of the alignment film which concerns on this embodiment. It is a top view which shows the formation method of the alignment film which concerns on this embodiment. It is a top view which shows the formation method of the alignment film which concerns on this embodiment. It is a top view which shows the formation method of the alignment film which concerns on this embodiment. It is a top view which shows the formation method of the alignment film which concerns on this embodiment. It is a top view which shows the formation method of the alignment film which concerns on a comparative example. It is a top view which shows the formation method of the alignment film which concerns on a comparative example. It is a top view which shows the formation method of the alignment film which concerns on a comparative example. It is a top view which shows the formation method of the alignment film which concerns on a comparative example. It is a top view which shows the formation method of the alignment film which concerns on a comparative example. It is a top view which shows the formation method of the alignment film which concerns on this embodiment.

  Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1 is a plan view showing the overall configuration of the liquid crystal display device according to the present embodiment. The liquid crystal display device LCD is roughly composed of an image display area DIA and a frame area FRA that is an area around the image display area DIA. In the image display area DIA, a plurality of pixels P surrounded by two adjacent gate lines GL and two adjacent data lines DL are arranged in a matrix in the row direction and the column direction. That is, the image display area DIA is defined as an aggregate area (effective pixel area) of a plurality of pixels P. The direction in which the data line DL extends is defined as the column direction (vertical direction in the drawing) (first direction), and the direction in which the gate line GL extends is defined in the row direction (horizontal direction in the drawing) (second direction). And In the frame area FRA, a gate line driving circuit for driving the gate line GL and a data line driving circuit for driving the data line DL are formed.

  FIG. 2 is a plan view showing a configuration of a part of the image display area DIA, and FIG. 3 is a cross-sectional view taken along the line AA ′ of FIG. As shown in FIG. 3, the liquid crystal display device LCD includes a thin film transistor substrate SUB1 (hereinafter referred to as a TFT substrate) (hereinafter referred to as a TFT substrate) (first substrate) disposed on the back side, and is disposed on the display surface side and faces the TFT substrate SUB1. A color filter substrate SUB2 (hereinafter referred to as a CF substrate) (second substrate) and a liquid crystal layer LC sandwiched between the TFT substrate SUB1 and the CF substrate SUB2 are configured. For convenience, FIG. 2 shows a state in which the CF substrate SUB2 is seen through from the display surface side and the TFT substrate SUB1 is viewed.

  A plurality of data lines DL extending in the column direction and a plurality of gate lines GL extending in the row direction are formed on the TFT substrate SUB1, and each of the plurality of data lines DL and the plurality of gate lines GL is formed. A thin film transistor TFT is formed in the vicinity of the intersection.

  In the pixel P, a pixel electrode PIT made of a transparent conductive film such as tin-added indium oxide (ITO) is formed. As shown in FIG. 2, the pixel electrode PIT has an opening (for example, a slit) and is formed in a stripe shape. In the thin film transistor TFT, a semiconductor layer SEM made of amorphous silicon (aSi) is formed on a gate insulating film GSN (see FIG. 3), and a drain electrode DM and a source electrode SM are formed on the semiconductor layer SEM. . The drain electrode DM is electrically connected to the data line DL, and the source electrode SM is electrically connected to the pixel electrode PIT via the contact hole CONT.

  The stacked structure of each part constituting the pixel P is not limited to the configuration of FIG. 3, and a known configuration can be applied. In the configuration shown in FIG. 3, in the TFT substrate SUB1, the gate line GL is formed on the glass substrate GB1, and the gate insulating film GSN (first insulating film) is formed so as to cover the gate line GL. On the gate insulating film GSN, a semiconductor layer SEM is formed, and on the semiconductor layer SEM, a data line DL and conductive electrodes (drain electrode DM, source electrode SM) constituting the thin film transistor TFT are formed. A protective insulating film PAS is formed so as to cover the data line DL, the drain electrode DM, and the source electrode SM, and a thick organic insulating film OPAS (second insulating film) is formed on the protective insulating film PAS. . A common electrode CIT is formed on the organic insulating film OPAS, and an upper insulating film UPAS is formed so as to cover the common electrode CIT. A contact hole CONT reaching the source electrode SM is formed in the protective insulating film PAS, the organic insulating film OPAS, and the upper insulating film UPAS. A pixel electrode PIT is formed on the upper insulating film UPAS and in the contact hole CONT, whereby the pixel electrode PIT and the source electrode SM (one conductive electrode) are electrically connected. An alignment film AF is formed so as to cover the pixel electrode PIT. In addition, although not shown, a polarizing plate or the like is formed on the TFT substrate SUB1.

  In the CF substrate SUB2, a black matrix BM and a colored portion CF (for example, a red portion, a green portion, and a blue portion) are formed on the glass substrate GB2, and an overcoat layer OC is formed so as to cover them. In addition, although not shown, an alignment film, a polarizing plate, and the like are formed on the CF substrate SUB2.

  According to the configuration shown in FIG. 3, the liquid crystal display device LCD has a so-called IPS (In Plane Switching) configuration, but the liquid crystal display device according to the present invention is not limited to this. For example, the common electrode CIT may be formed on the CF substrate SUB2. Specifically, in the TFT substrate SUB1, the gate line GL is formed on the glass substrate GB1, the gate insulating film GSN (first insulating film) is formed so as to cover the gate line GL, and the data is formed on the gate insulating film GSN. A line DL and a thin film transistor TFT (drain electrode DM, source electrode SM) are formed, a protective insulating film PAS is formed on the data line DL and thin film transistor TFT, and an organic insulating film OPAS (second insulating film) is formed on the protective insulating film PAS. The contact hole CONT is formed in the protective insulating film PAS and the organic insulating film OPAS, the pixel electrode PIT is formed on the organic insulating film OPAS and in the contact hole CONT, and the alignment film AF is formed so as to cover the pixel electrode PIT. It may be formed.

  Next, a method for driving the liquid crystal display device LCD will be briefly described. The scanning gate voltage output from the gate line driving circuit is supplied to the gate line GL, and the video data voltage output from the data line driving circuit is supplied to the data line DL. When a gate-on voltage is supplied to the gate line GL, the semiconductor layer SEM of the thin film transistor TFT becomes low resistance, and the data voltage supplied to the data line DL is electrically connected to the source electrode SM via the source electrode SM. Supplied to the pixel electrode PIT. Further, the common voltage output from the common electrode driving circuit (not shown) is supplied to the common electrode CIT. As a result, an electric field (driving electric field) is generated between the pixel electrode PIT and the common electrode CIT, and the liquid crystal layer LC is driven by the electric field to display an image.

  Next, an example of a manufacturing method of the TFT substrate SUB1 having the above configuration will be described.

  First, a metal material to be the gate line GL is formed on the glass substrate GB1 by sputtering, and is patterned using halftone exposure in a photoetching process. Thereby, the gate line GL is formed. As the metal wiring material, copper Cu, a laminated film of Mo and aluminum Al, a laminated film of titanium Ti and Al, a MoW alloy of Mo and tungsten W, or the like can be used.

  Next, a gate insulating film GSN made of silicon nitride is formed by chemical vapor deposition CVD so as to cover the gate line GL, and a semiconductor layer SEM such as amorphous silicon or oxide IGZO is formed on the gate insulating film GSN. Are laminated.

  Next, a laminated film of molybdenum Mo and copper Cu is formed on the semiconductor layer SEM by sputtering. The data line DL, the drain electrode DM, and the source electrode SM are formed simultaneously.

  Next, the protective insulating film PAS is formed so as to cover the data line DL, the drain electrode DM, and the source electrode SM, and the organic insulating film OPAS is formed over the protective insulating film PAS. For the organic insulating film OPAS, a photosensitive organic material mainly composed of acrylic is used.

  Next, a common electrode CIT made of ITO is formed on the organic insulating film OPAS, and an upper insulating film UPAS made of silicon nitride is formed so as to cover the common electrode CIT.

  Next, an opening (contact hole CONT) is formed in the protective insulating film PAS, the organic insulating film OPAS, and the upper insulating film UPAS so that the source electrode SM is exposed. Next, indium, tin, and oxide ITO, which are transparent electrode materials, are formed on the upper insulating film UPAS and in the contact holes CONT, and a pixel electrode PIT is formed through a photoetching process.

  Next, a material for the alignment film AF (for example, polyimide resin) is applied by an inkjet method so as to cover the pixel electrode PIT. After the application, the alignment film material is dried to form the alignment film AF. A specific method for forming the alignment film AF will be described later. Next, the alignment film AF is rubbed. When forming a photo-alignment film, the alignment film AF is irradiated with predetermined polarized ultraviolet rays (photo-alignment treatment). In particular, when the photo-alignment film is used, the display unevenness due to the variation in the film thickness of the alignment film becomes easy to visually recognize, and the effect of the present invention becomes remarkable. Through the above steps, the TFT substrate SUB1 is manufactured.

  The manufacturing method of the TFT substrate SUB1 is not limited to the above method. The manufacturing method of the TFT substrate SUB1 includes a step of forming a gate line GL on the glass substrate GB1, a step of forming a first insulating film so as to cover the gate line GL, and a data line DL and a thin film transistor on the first insulating film. A step of forming a TFT (drain electrode DM, source electrode SM), a step of forming a second insulating film so as to cover the data line DL and the thin film transistor TFT, a step of forming a contact hole CONT in the second insulating film, Preferably, the method includes a step of forming the pixel electrode PIT on the second insulating film and in the contact hole CONT, and a step of forming the alignment film AF so as to cover the pixel electrode PIT. The first insulating film is preferably a gate insulating film GSN, and the second insulating film is preferably an organic insulating film OPAS. The manufacturing method of the TFT substrate SUB1 may include a step of forming the common electrode CIT. The CF substrate SUB2 can be manufactured by a known manufacturing method.

[Method for forming alignment film]
Next, a specific method for forming the alignment film AF will be described. The alignment film AF is formed by dropping an alignment film material on the substrate by an ink jet method. FIG. 4 is a schematic diagram illustrating a configuration of an ink jet apparatus (dropping apparatus) that drops an alignment film material onto a substrate. The inkjet apparatus 10 includes a stage 11 on which a substrate 20 is movably mounted, a head 13 including a plurality of nozzles 12 that discharge (drop) the alignment film material, a frame 14 that movably supports the head 13, and a substrate. 20 and a control unit 15 for controlling the moving speed of the head 13, the discharge amount (dropping amount) of the alignment film material, the coating frequency, and the like. Here, for convenience, the substrate 20 omits the frame area FRA and shows only the image display area DIA.

  The moving direction of the substrate 20 and the coating direction (X direction) of the inkjet device 10 are set to the column direction (first direction) in which the data lines DL extend, and the moving direction (Y direction) of the head 13 is the gate. It is set in the row direction (second direction) in which the line GL extends. The substrate 20 may move in the row direction (X direction) on the stage 11, or the stage 11 to which the substrate 20 is fixed may move in the row direction (X direction). Further, the substrate 20 and the stage 11 may be fixed, and the frame 14 may move in the column direction (X direction). That is, it is only necessary that the substrate 20 placed on the stage 11 and the head 13 for discharging the alignment film material are relatively movable in the X direction. The substrate 20 placed on the stage 11 is the TFT substrate SUB1 before forming the alignment film.

FIG. 5 is a plan view showing a partial configuration of the head 13 and the substrate 20. FIG. 5 shows three nozzles 12 provided on the head 13. The nozzles 12 are fixed to the head 13 at equal intervals. Here, the interval (nozzle pitch) between adjacent nozzles 12 is P1. When the pitch in the column direction (pixel column pitch) of the plurality of pixels is P2, and the pitch in the row direction (pixel row pitch) is P3, the nozzle pitch P1 satisfies the following relational expression (1).
P1>P2> P3 (1)

When the coating process by the inkjet device 10 is started, the alignment film material is discharged from the nozzle 12 at a predetermined frequency while the substrate 20 moves at a predetermined speed in the column direction (upward arrow direction in FIG. 5). 20 is continuously dropped in the row direction. In the image display area DIA in FIG. 5, the first dropping position (round dotted line) of the alignment film material is shown. When the first coating process including the movement in the upward arrow direction of the substrate 20 and the dropping process in the column direction of the image display area DIA shown in FIG. 5 is completed, the movement of the substrate 20 and the discharging operation of the alignment film material are stopped. To do. FIG. 6 shows a dropping position (round solid line) of the alignment film material in the image display area DIA after the first coating process is completed. Here, when the pitch of the dropping position of the alignment film material in the moving direction of the substrate 20 (first dropping pitch) is P4, the moving speed of the substrate 20 and the discharge frequency of the alignment film material are expressed by the following relational expression (2 ). The following relational expression (2) includes a case where the first dropping pitch P4 and the pixel column pitch P2 are substantially the same.
P4 ≦ P2 (2)

Subsequent to the first application step, the following second application step is performed. First, the head 13 moves in the row direction (right arrow direction in FIG. 7) by a distance P5. The distance P5 satisfies the following relational expression (3). The distance P5 represents the pitch in the moving direction of the head 13 (second dropping pitch) at the dropping position of the alignment film material.
P5 = P1 ÷ 2 (3)

Further, the moving distance P5 of the head 13 in the row direction is set to be larger than the pixel column pitch P2 as shown in the following relational expression (4).
P5> P2 (4)

  After the head 13 moves, the alignment film material is ejected from the nozzle 12 at a predetermined frequency while the substrate 20 moves at a predetermined speed in the column direction (downward arrow direction in FIG. 7), and the substrate 20 is aligned in the column direction. Continuously dripped. In the image display area DIA in FIG. 7, the first dropping position (round dotted line) of the alignment film material in the second coating step is shown. When the second coating process including the movement in the downward arrow direction of the substrate 20 and the dropping process in the column direction of the image display area DIA shown in FIG. 7 is completed, the movement of the substrate 20 and the discharging operation of the alignment film material are stopped. To do. FIG. 8 shows the dropping position (round solid line) of the alignment film material in the image display area DIA after the second coating step is completed. In the second coating step, the pitch of the alignment film material dropping position in the moving direction of the substrate 20 is the same as the first dropping pitch P4 in the first coating step. In the present embodiment, the dropping position in the column direction of the alignment film material in the second application step is the same as the dropping position in the column direction of the alignment film material in the first application step, but the present invention is not limited to this. The column-direction dropping position of the alignment film material in the second coating step may be set between the column-direction dropping positions in the first coating step. In this case, it is possible to realize suitable wetting and spreading of the droplets.

  FIG. 9 shows a state where the alignment film material dropped on the substrate 20 in the first application process and the second application process is spread and the alignment film AF is formed. As shown in the figure, the alignment film material wets and spreads over the entire image display area DIA, and the alignment film AF is formed over the entire image display area DIA. FIG. 9 shows the position of contact hole CONT (black circle in the figure).

  Here, a comparative example for the alignment film AF according to the present embodiment will be described below. FIG. 10 is a plan view showing a partial configuration of the head 13 and the substrate 20 in the comparative example. In the method for forming the alignment film AF according to the comparative example, the orientation of the substrate 20 placed on the stage 11 is rotated by 90 degrees compared to the method for forming the alignment film AF according to the present embodiment (see FIG. 5). Set to state. That is, in the method for forming the alignment film AF according to the comparative example, the moving direction of the substrate 20 and the coating direction of the inkjet device 10 (X direction in FIG. 4) are in the row direction (second direction) in which the gate lines GL extend. The moving direction of the head 13 (Y direction in FIG. 4) is set in the column direction (first direction) in which the data line DL extends.

  In the method of forming the alignment film AF according to the comparative example, the same coating process as the first coating process and the second coating process is performed. 10 and 11 show the first application process in the comparative example, and FIGS. 12 and 13 show the second application process in the comparative example. Each of the pitches P1 to P5 satisfies the relationship of the above expressions (1) to (4).

  FIG. 14 shows a state where the alignment film material dropped on the substrate 20 in the first application process and the second application process in the comparative example is spread and the alignment film AF is formed. As shown in the drawing, the alignment film material wets and spreads in the image display area DIA, but it can be seen that the alignment film material does not wet and spread in a part of the pixel row Pa and the alignment film AF is not formed. As shown in FIG. 13, since the second dropping pitch P5 is larger than the pixel column pitch P2 (refer to the above formula (4)), the pixel row to which the alignment film material is not dropped (here, the pixel row Pa ( 14))), and the alignment film material that has been dropped and spread in the regions of the left and right pixel rows Pb and Pc adjacent to the pixel row Pa is near the boundary between the pixel row Pa and the pixel rows Pb and Pc. This is because it flows into the contact hole CONT (see FIG. 3) formed in the area and does not reach the pixel row Pa area. Such a phenomenon becomes prominent particularly when a thick layer such as an organic insulating film is included and the region of the contact hole CONT is larger than the pixel region. When an area where the alignment film AF is not formed (an alignment film non-formation area) is generated, display luminance varies and display unevenness occurs.

  In contrast to the comparative example, according to the method for forming the alignment film AF according to the present embodiment, the moving direction of the substrate 20 and the coating direction of the inkjet device 10 (the X direction in FIG. 4) are the extending direction of the data line DL. (Column direction: first direction). Further, as shown in the above formula (2), the pitch (dropping pitch P4) of the dropping position of the alignment film material in the moving direction of the substrate 20 is substantially the same as the pixel column pitch P2 or smaller than the pixel column pitch P2. It is possible to set. Therefore, as shown in FIG. 8, there is no pixel row region where the alignment film material is not dropped in a plurality of pixel rows. If the alignment film material is dropped in the region of each pixel row, even if the alignment film material flows into the contact hole CONT, the alignment film material does not form an alignment film non-formation region because it wets and spreads in the column direction in each pixel row. Note that the alignment film material that spreads in the row direction is not easily affected by the contact hole CONT, and therefore no alignment film non-formation region is generated in the row direction. Therefore, a region where no alignment film AF is formed (an alignment film non-formation region) as shown in FIG. 14 does not occur, and the alignment film AF is formed over the entire image display area DIA (see FIG. 9). Therefore, according to the method for manufacturing the liquid crystal display device LCD according to the present embodiment, display unevenness due to poor formation of the alignment film AF can be reduced.

  In the method for forming the alignment film AF according to the present embodiment described above, the alignment film AF is formed by two application processes of the first application process and the second application process. The manufacturing method is not limited to this. For example, the coating process may be performed three times or more. For example, the first application process and the second application process may be repeated a plurality of times.

  In addition, the method for forming the alignment film AF according to the present embodiment described above may include a step of swinging the substrate 20 after dropping the alignment film material on the substrate 20 (see FIG. 8). Here, as shown in FIG. 15, when the first dropping pitch P4 and the second dropping pitch P5 are compared, the relationship of P5> P4 is satisfied. For this reason, the direction in which the substrate 20 is swung is preferably the row direction (second direction) in which the dropping pitch is large. Thereby, the alignment film material dropped on the substrate 20 can be greatly wetted and spread.

  In the above description, the method for forming the alignment film AF on the TFT substrate SUB1 has been described. However, the alignment film AF on the CF substrate SUB2 can also be formed by the same method.

  As mentioned above, although one embodiment of the present invention has been described, the present invention is not limited to the above-described embodiment, and forms that are appropriately modified by those skilled in the art from the above-described embodiments within the scope not departing from the gist of the present invention. It goes without saying that it is included in the technical scope of the invention.

  LCD liquid crystal display device, DIA image display area, FRA frame area, SUB1 TFT substrate, SUB2 CF substrate, LC liquid crystal layer, GB1, GB2 glass substrate, GL gate line, GSN gate insulating film, PAS protective insulating film, OPAS organic insulating film UPAS upper layer insulation film, DL data line, DM drain electrode, SM source electrode, SEM semiconductor layer, TFT thin film transistor, CIT common electrode, PIT pixel electrode, AF alignment film, BM black matrix, CF coloring part, OC overcoat layer, CONT contact hole, 10 inkjet device, 11 stage, 12 nozzles, 13 heads, 14 frames, 15 control unit, 20 substrate.

Claims (8)

A plurality of data lines extending in a first direction on the substrate; a plurality of gate lines extending in a second direction different from the first direction; and the thin film transistors connected to the data lines and the gate lines A method of manufacturing a liquid crystal display device in which a pixel electrode electrically connected to a conductive electrode of the thin film transistor through a contact hole and an alignment film covering the pixel electrode are formed,
A step of relatively moving the substrate and a dropping device for dropping the material of the alignment film on the substrate by an ink jet method in the first direction, and dropping the material of the alignment film on the substrate; Including,
A method for manufacturing a liquid crystal display device.   The method of manufacturing a liquid crystal display device according to claim 1, wherein the step is repeated a plurality of times. A pitch substantially equal to the arrangement pitch in the first direction in a plurality of pixels in which one pixel defined by two adjacent data lines and two adjacent gate lines is arranged in a matrix, or Dropping the alignment film material onto the substrate at a pitch smaller than the arrangement pitch;
A method for manufacturing a liquid crystal display device according to claim 1 or 2. The pitch in the second direction of the dropping position of the alignment film material on the substrate is larger than the arrangement pitch in the first direction in the plurality of pixels.
The method of manufacturing a liquid crystal display device according to claim 3. Forming the gate line on the substrate;
Forming a first insulating film so as to cover the gate line;
Forming a conductive electrode of the data line and the thin film transistor on the first insulating film;
Forming a second insulating film so as to cover the data line and the conductive electrode of the thin film transistor;
Forming the contact hole in the second insulating film;
Forming the pixel electrode on the second insulating film and in the contact hole;
The method for manufacturing a liquid crystal display device according to claim 1, wherein the liquid crystal display device is a liquid crystal display device.   6. The method of manufacturing a liquid crystal display device according to claim 5, wherein the second insulating film is made of an organic material. The method further includes the step of swinging the substrate in the second direction after dropping the material of the alignment film on the substrate.
The method for manufacturing a liquid crystal display device according to claim 1, wherein: Further comprising a step of photo-aligning the alignment film,
The method for manufacturing a liquid crystal display device according to claim 1, wherein:

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