JP2015082649A - Semiconductor element, and method of adhering solder to terminal included in semiconductor element - Google Patents

Semiconductor element, and method of adhering solder to terminal included in semiconductor element Download PDF

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JP2015082649A
JP2015082649A JP2013221480A JP2013221480A JP2015082649A JP 2015082649 A JP2015082649 A JP 2015082649A JP 2013221480 A JP2013221480 A JP 2013221480A JP 2013221480 A JP2013221480 A JP 2013221480A JP 2015082649 A JP2015082649 A JP 2015082649A
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solder
solder bath
gap
terminals
semiconductor element
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JP6040910B2 (en
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敬昌 林
Hiromasa Hayashi
敬昌 林
翔 堀井
Sho Horii
翔 堀井
剛 中倉
Go Nakakura
剛 中倉
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Denso Corp
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Denso Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor element, and a method of adhering solder to a terminal included in the semiconductor element.SOLUTION: A semiconductor element comprises: a main body part 10; and a plurality of terminals 20 attached and fixed to the main body part 10. Each of the plurality of terminals 20 is immersed into a solder bath 150 in which molten solder is stored, and then, raised from the solder bath 150, and thereby, the molten solder is adhered to the terminal 20. Each terminal 20 includes: a leg part 21 extending in a direction separated from the main body part; and a connector 22 provided at an end part of the leg part 21, and immersed into the solder bath 150. The leg part included in each of the plurality of terminals 20 has a shape extending in a direction approaching the solder bath 150, and a length of at least one of the leg parts included in the plurality of respective terminals 20 is different from that of the leg part included in the other terminal 20. The connector 22 is formed in an annular shape having a gap by notching a part thereof.

Description

本発明は、本体部と、本体部に取り付け固定された複数の端子と、を有する半導体素子、および、半導体素子の有する端子への半田の付着方法に関するものである。   The present invention relates to a semiconductor element having a main body part and a plurality of terminals fixedly attached to the main body part, and a method for attaching solder to the terminals of the semiconductor element.

従来、例えば特許文献1に示されるように、端子のリード部の上端部に保持部を一体形成し、保持部に電子部品素子を挿入接続した後、電子部品素子および保持部を樹脂によって覆った電子部品の製造方法が提案されている。なお、保持部への電子部品素子の挿入接続は、端子の保持部およびリード部に薄膜の半田膜を形成する半田めっき処理を施した後に行われる。   Conventionally, as shown in Patent Document 1, for example, a holding portion is integrally formed on the upper end portion of a lead portion of a terminal, and after inserting and connecting an electronic component element to the holding portion, the electronic component element and the holding portion are covered with resin A method for manufacturing an electronic component has been proposed. The electronic component element is inserted and connected to the holding portion after a solder plating process for forming a thin solder film on the terminal holding portion and the lead portion is performed.

特開S63−126255号公報JP S63-126255 A

上記したように特許文献1に示される電子部品の製造方法では、保持部に半田膜を形成する。この半田膜を形成する方法として、保持部を半田浴に浸漬した後、半田浴から保持部を引き上げて余分な半田を流れ落とす方法が考えられる。この方法の場合、複数の端子それぞれのリード部の長さが異なると、各リード部それぞれに付着される半田の量が異なることとなる。そのために半田浴から端子を引き上げた際、リード部から保持部に向かって半田が流れ落ち、これによって保持部に余分な半田が付着される虞がある。仮に保持部が環状を成し、その環状の内環面によって囲まれた領域(以下、単に孔と示す)内に電子部品素子が挿入される場合、本来であれば貫通しているはずの上記した孔が半田によって埋められてしまう。したがって電子部品素子(外部端子)を孔に挿入することで外部端子と端子とを接続することが困難となる虞がある。   As described above, in the method of manufacturing an electronic component disclosed in Patent Document 1, a solder film is formed on the holding portion. As a method for forming this solder film, a method is conceivable in which, after the holding portion is immersed in a solder bath, the holding portion is pulled up from the solder bath to allow excess solder to flow down. In the case of this method, when the lengths of the lead portions of the plurality of terminals are different, the amount of solder attached to each lead portion is different. Therefore, when the terminal is pulled up from the solder bath, the solder flows down from the lead portion toward the holding portion, which may cause excess solder to adhere to the holding portion. If the electronic component element is inserted into a region (hereinafter, simply referred to as a hole) surrounded by the annular inner ring surface if the holding portion has a ring shape, the above-mentioned should have penetrated. The hole is filled with solder. Therefore, it may be difficult to connect the external terminal and the terminal by inserting the electronic component element (external terminal) into the hole.

そこで本発明は上記問題点に鑑み、外部端子と端子との接続が困難となることが抑制された半導体素子、および、半導体素子の有する端子への半田の付着方法を提供することを目的とする。   In view of the above problems, an object of the present invention is to provide a semiconductor element in which the connection between the external terminal and the terminal is suppressed and a method for attaching solder to the terminal of the semiconductor element. .

上記した目的を達成するために、本発明は、本体部(10)と、本体部に取り付け固定された複数の端子(20)と、を有し、複数の端子それぞれが溶融した半田(40)の蓄えられた半田浴(150)に浸漬された後、半田浴から引き上げられることで端子に溶融した半田が付着される半導体素子であって、端子は、本体部から離れる方向に延びた足部(21)と、足部の端部に設けられ、半田浴に浸漬される接続部(22)と、を有し、複数の端子それぞれの有する足部は半田浴に近づく方向に延びた形状を成し、複数の端子それぞれの有する足部の少なくとも1つは他の端子の有する足部とは長さが異なっており、接続部は一部が切り欠くことでギャップを有する環状を成すことを特徴とする。   In order to achieve the above object, the present invention includes a main body (10) and a plurality of terminals (20) fixedly attached to the main body, and the solder (40) in which each of the plurality of terminals is melted. A semiconductor element in which molten solder is attached to a terminal by being dipped in the solder bath (150) in which the molten metal is stored, and the terminal extends in a direction away from the main body. (21) and a connection portion (22) provided at the end of the foot and immersed in the solder bath, and each foot having a plurality of terminals has a shape extending in a direction approaching the solder bath. And at least one of the legs of each of the plurality of terminals is different in length from the legs of the other terminals, and the connecting part is notched partially so as to form a ring with a gap. Features.

接続部(22)がギャップを有さずに環状を成す場合、接続部(22)を半田浴(150)から引き上げた際、自身の内面(22c)に表面張力によって膜状に溶融した半田(40)が付着する。複数の足部(21)それぞれの長さが等しい場合、複数の足部(21)それぞれを半田浴(150)に浸漬させずに複数の接続部(22)だけを半田浴(150)に浸漬することができる。そのために端子(20)を半田浴(150)から引き上げた際、接続部(22)の内面(22c)に膜状に半田(40)が付着していたとしても、その膜に足部(21)に付着した半田(40)が流動することが抑制され、それによって膜の強度が高まることが抑制される。そのために膜状の半田(40)の自重による流動によって膜を壊すことができる。   When the connection portion (22) has an annular shape without a gap, when the connection portion (22) is pulled up from the solder bath (150), the solder (melted in a film shape by surface tension on its inner surface (22c)) ( 40) adheres. When the lengths of the plurality of foot portions (21) are equal, only the plurality of connection portions (22) are immersed in the solder bath (150) without immersing each of the plurality of foot portions (21) in the solder bath (150). can do. Therefore, even when the solder (40) is attached to the inner surface (22c) of the connection portion (22) when the terminal (20) is pulled up from the solder bath (150), the foot (21 ) Is prevented from flowing, and thereby the strength of the film is suppressed from increasing. Therefore, the film can be broken by the flow of the film-like solder (40) by its own weight.

しかしながら半導体素子(100)を収納するケース(120)の形状や端子(20)と接続される外部端子(130)の配置などの設計上の理由から足部(21)の長さが異なる場合、少なくとも1つの足部(21)を半田浴(150)に浸漬させなくてはならず、足部(21)に付着する半田(40)の量が異なる。また複数の接続部(22)それぞれが半田浴(150)に浸漬される時間も異なることとなる。そのため接続部(22)を半田浴(150)から引き上げた際、接続部(22)に膜状に付着した半田(40)に、足部(21)に付着した半田(40)が流動し、それによって膜の強度が高まる。そして膜が自重による流動によって壊れる前に半田(40)が固まり、本来であれば貫通しているはずの接続部(22)の内面(22c)によって囲まれた領域(以下、単に孔と示す)が半田(40)によって埋められてしまう。したがって外部端子(130)を接続部(22)の孔に通すことで外部端子(130)と端子(20)とを接続することができなくなる。   However, when the length of the foot (21) is different for design reasons such as the shape of the case (120) for housing the semiconductor element (100) and the arrangement of the external terminal (130) connected to the terminal (20), At least one foot (21) must be immersed in the solder bath (150) and the amount of solder (40) adhering to the foot (21) is different. In addition, the time during which each of the plurality of connection portions (22) is immersed in the solder bath (150) is also different. Therefore, when the connecting portion (22) is pulled up from the solder bath (150), the solder (40) attached to the foot portion (21) flows into the solder (40) attached to the connecting portion (22) in a film shape, This increases the strength of the membrane. Then, the solder (40) is solidified before the film is broken by the flow due to its own weight, and the region surrounded by the inner surface (22c) of the connection portion (22) that should have penetrated (hereinafter, simply referred to as a hole). Is filled with solder (40). Therefore, the external terminal (130) and the terminal (20) cannot be connected by passing the external terminal (130) through the hole of the connection portion (22).

これに対して本発明では、接続部(22)は一部が切り欠くことでギャップを有する環状を成している。したがって、接続部(22)が半田浴(150)に浸漬された後に引き上げられた際、接続部(22)の内面(22c)に表面張力によって膜状に付着した半田(40)を、ギャップを埋める半田(40)が自重のために半田浴(150)に流れ落ちようとする際に生じる流動(以下、第1流動と示す)、および、ギャップを埋める半田(40)が自身の表面積を最小にしようとする際に生じる流動(以下、第2流動と示す)によって破壊することができる。これによって接続部(22)の孔が半田(40)によって埋められることが抑制され、外部端子(130)と端子(20)とを接続できなくなることが抑制される。更に言えば、上記した流動によって余分な半田(40)が半田浴(150)に戻されるので、接続部(22)に付着する半田(40)の厚さが調整される。   On the other hand, in this invention, the connection part (22) has comprised the cyclic | annular form which has a gap by notching part. Therefore, when the connecting portion (22) is pulled up after being immersed in the solder bath (150), the solder (40) attached to the inner surface (22c) of the connecting portion (22) in the form of a film by surface tension is removed from the gap. The flow generated when the solder (40) to be filled flows down into the solder bath (150) due to its own weight (hereinafter referred to as the first flow), and the solder (40) to fill the gap minimizes its surface area. It can be broken by the flow (hereinafter referred to as the second flow) generated when trying to do so. Thereby, it is suppressed that the hole of the connection part (22) is filled with the solder (40), and it is possible to prevent the external terminal (130) and the terminal (20) from being connected. Furthermore, since the excess solder (40) is returned to the solder bath (150) by the above-described flow, the thickness of the solder (40) attached to the connection portion (22) is adjusted.

ギャップは、半田浴に近づく方向に直交する横方向に位置する。これによれば、接続部(22)を半田浴(150)に浸漬させる際に、ギャップが半田浴(150)に対して対向する位置に設けられた構成とは異なり、第1流動と第2流動とが相殺し合うことが抑制される。第1流動は半田浴(150)に近づく方向に進み、第2流動は接続部(22)の中心に向かう方向に進む。上記した比較構成の場合、第1流動は半田浴(150)に近づく方向に進み、第2流動は半田浴(150)から遠ざかる方向に進む。そのために2つの流動が相殺し合う。これに対して上記構成の場合、第1流動は横方向に進み、第2流動は半田浴(150)に近づく方向に進む。そのために比較構成と比べて2つの流動が相殺し合うことが抑制され、両流動によって生じる応力によって膜が破壊される。この結果、接続部(22)の孔が半田(40)によって埋められることが抑制され、外部端子(130)と端子(20)とを接続できなくなることが抑制される。そして接続部(22)に付着する半田(40)の厚さが調整される。   The gap is located in the lateral direction perpendicular to the direction approaching the solder bath. According to this, when the connection portion (22) is immersed in the solder bath (150), the first flow and the second flow are different from the configuration in which the gap is provided at a position facing the solder bath (150). It is suppressed that the flow cancels out. The first flow proceeds toward the solder bath (150), and the second flow proceeds toward the center of the connection portion (22). In the case of the comparative configuration described above, the first flow proceeds in a direction approaching the solder bath (150), and the second flow proceeds in a direction away from the solder bath (150). As a result, the two flows cancel each other. On the other hand, in the case of the above configuration, the first flow proceeds in the lateral direction, and the second flow proceeds in a direction approaching the solder bath (150). Therefore, the two flows are prevented from canceling each other as compared with the comparative configuration, and the film is broken by the stress generated by the two flows. As a result, the hole of the connecting portion (22) is suppressed from being filled with the solder (40), and the external terminal (130) and the terminal (20) can be prevented from being connected. And the thickness of the solder (40) adhering to a connection part (22) is adjusted.

接続部はギャップを介して対向する2つの端面(22a,22b)を有し、2つの端面の内の少なくとも一方は、接続部の内面(22c)によって囲まれた領域の中心(CP)から外に向かうにしたがって、接続部の中心の周り方向に沿うギャップの幅が広がるように傾斜している。これによれば、2つの端面(22a,22b)の少なくとも一方が接続部(22)の中心(CP)から外に向かうにしたがって周り方向に沿うギャップの幅が狭まるように傾斜している構成と比べて、接続部(22)を半田浴(150)から引き上げた際、端面(22a,22b)と外面(22d)との成す2つのエッジ間にて生じる第2流動が促進され、膜が壊れやすくなる。この結果、接続部(22)の孔が半田(40)によって埋められることが抑制され、外部端子(130)と端子(20)とを接続できなくなることが抑制される。そして接続部(22)に付着する半田(40)の厚さが調整される。   The connecting portion has two end faces (22a, 22b) facing each other through a gap, and at least one of the two end faces is outside the center (CP) of the region surrounded by the inner face (22c) of the connecting portion. The gap is inclined so that the width of the gap along the direction around the center of the connection portion increases as it goes to. According to this, at least one of the two end faces (22a, 22b) is inclined so that the width of the gap along the circumferential direction becomes narrower toward the outside from the center (CP) of the connecting portion (22). In comparison, when the connection part (22) is pulled up from the solder bath (150), the second flow generated between the two edges formed by the end faces (22a, 22b) and the outer face (22d) is promoted, and the film is broken. It becomes easy. As a result, the hole of the connecting portion (22) is suppressed from being filled with the solder (40), and the external terminal (130) and the terminal (20) can be prevented from being connected. And the thickness of the solder (40) adhering to a connection part (22) is adjusted.

なお、特許請求の範囲に記載の請求項、および、課題を解決するための手段それぞれに記載の要素に括弧付きで符号をつけているが、この括弧付きの符号は実施形態に記載の各構成要素との対応関係を簡易的に示すためのものであり、実施形態に記載の要素そのものを必ずしも示しているわけではない。括弧付きの符号の記載は、いたずらに特許請求の範囲を狭めるものではない。   In addition, although the elements described in the claims and the means for solving the problems are attached with parentheses, the parentheses are attached to each component described in the embodiment. This is to simply show the correspondence with the elements, and does not necessarily indicate the elements themselves described in the embodiments. The description of the reference numerals with parentheses does not unnecessarily narrow the scope of the claims.

第1実施形態に係る半導体素子を含むECUの概略構成を示す斜視図である。1 is a perspective view showing a schematic configuration of an ECU including a semiconductor element according to a first embodiment. 図1に示すECUの上面図である。It is a top view of ECU shown in FIG. 図2に示す端子の拡大図である。It is an enlarged view of the terminal shown in FIG. 準備工程を示す概略図である。It is the schematic which shows a preparation process. 浸漬工程を示す概略図である。It is the schematic which shows an immersion process. 引き上げ工程を示す概略図である。It is the schematic which shows a raising process. 端子を半田浴から第1距離引き上げた状態を示す平面図であり、(a)はx−y平面での状態、(b)はy−z平面での状態を示す。It is a top view which shows the state which pulled up the terminal 1st distance from the solder bath, (a) shows the state in xy plane, (b) shows the state in yz plane. 端子を半田浴から第2距離引き上げた状態を示す平面図であり、(a)はx−y平面での状態、(b)はy−z平面での状態を示す。It is a top view which shows the state which pulled up the terminal 2nd distance from the solder bath, (a) shows the state in xy plane, (b) shows the state in yz plane. 端子を半田浴から第3距離引き上げた状態を示す平面図であり、(a)はx−y平面での状態、(b)はy−z平面での状態を示す。It is a top view which shows the state which pulled up the terminal 3rd distance from the solder bath, (a) shows the state in xy plane, (b) shows the state in yz plane. 端子を半田浴から第4距離引き上げた状態を示す平面図であり、(a)はx−y平面での状態、(b)はy−z平面での状態を示す。It is a top view which shows the state which pulled up the terminal 4th distance from the solder bath, (a) shows the state in xy plane, (b) shows the state in yz plane. 端子を半田浴から第5距離引き上げた状態を示す平面図であり、(a)はx−y平面での状態、(b)はy−z平面での状態を示す。It is a top view which shows the state which pulled up the terminal 5th distance from the solder bath, (a) shows the state in xy plane, (b) shows the state in yz plane. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part. 接続部の変形例を示す平面図である。It is a top view which shows the modification of a connection part.

以下、本発明をECUに適用した場合の実施形態を図に基づいて説明する。
(第1実施形態)
図1〜図11に基づいて、本実施形態に係る半導体素子を説明する。構成を明示するために、図1ではケース120で囲まれた半導体素子100、ヒートシンク110、および、外部端子130を実線で示し、図1および図2では半田40を省略している。また図2では外部端子130および外部端子130と接続されない端子20を省略し、図3では足部21と接続部22との境界を一点鎖線で示している。そして図4〜図6では端子20への溶融した半田40の付着の説明に不要な要素を省略している。また、各図面において端子20に付着した半田40をハッチングで示している。特に図7〜図11では、端子20に表面張力などのために付着している半田40もハッチングで示している。
Hereinafter, an embodiment when the present invention is applied to an ECU will be described with reference to the drawings.
(First embodiment)
The semiconductor element according to this embodiment will be described with reference to FIGS. In order to clarify the configuration, in FIG. 1, the semiconductor element 100, the heat sink 110, and the external terminal 130 surrounded by the case 120 are indicated by solid lines, and the solder 40 is omitted in FIGS. 1 and 2. In FIG. 2, the external terminal 130 and the terminal 20 not connected to the external terminal 130 are omitted, and in FIG. 4 to 6, elements unnecessary for explaining the adhesion of the molten solder 40 to the terminals 20 are omitted. In each drawing, the solder 40 attached to the terminal 20 is indicated by hatching. In particular, in FIGS. 7 to 11, the solder 40 attached to the terminal 20 due to surface tension or the like is also hatched.

以下においては互いに直交の関係にある3方向を、x方向、y方向、z方向と示す。x方向とy方向とによって規定される平面をx−y平面、y方向とz方向とによって規定される平面をy−z平面、z方向とx方向とによって規定される平面をz−x平面と示す。x方向が特許請求の範囲に記載の横方向に相当し、y方向が特許請求の範囲に記載の半田浴に近づく方向に沿う方向である。なお、後述する端子20に溶融した半田40を付着させる付着方法において、x方向は鉛直方向に沿い、y−z平面は水平方向に沿っている。   Hereinafter, the three directions orthogonal to each other are referred to as an x direction, a y direction, and a z direction. A plane defined by the x direction and the y direction is an xy plane, a plane defined by the y direction and the z direction is a yz plane, and a plane defined by the z direction and the x direction is a zx plane. It shows. The x direction corresponds to the lateral direction described in the claims, and the y direction is a direction along the direction approaching the solder bath described in the claims. In the adhesion method in which the molten solder 40 is adhered to the terminal 20 described later, the x direction is along the vertical direction, and the yz plane is along the horizontal direction.

図1に示すように、半導体素子100はECU200の構成要素の一つである。ECU200は上記した半導体素子100と、この半導体素子100にて生じる熱を放熱するヒートシンク110と、半導体素子100とヒートシンク110を収納するケース120と、を有する。半導体素子100は端子20を有しており、この端子20がモーター巻線から延びた外部端子130と半田40を介して接続されている。ECU200は半導体素子100を2つ有し、これら2つの半導体素子100それぞれがヒートシンク110と熱的に接続されている。   As shown in FIG. 1, the semiconductor element 100 is one of the components of the ECU 200. The ECU 200 includes the semiconductor element 100 described above, a heat sink 110 that radiates heat generated in the semiconductor element 100, and a case 120 that houses the semiconductor element 100 and the heat sink 110. The semiconductor element 100 has a terminal 20, and this terminal 20 is connected to an external terminal 130 extending from the motor winding via a solder 40. The ECU 200 includes two semiconductor elements 100, and each of the two semiconductor elements 100 is thermally connected to the heat sink 110.

半導体素子100は、本体部10と、本体部10に取り付け固定された複数の端子20と、を有する。図示しないが、本体部10はパワー素子が形成されたチップと、このチップを被覆保護する保護部と、を有する。端子20の一端がチップと電気的に接続され、保護部によって被覆保護されている。そして端子20の他端が保護部から外部に露出され、半田40を介して外部端子130と接続されている。保護部は直方形状を成し、面積の異なる3つの面を2つずつ有する。保護部における最も面積の大きい主面はx−z平面に沿い、ヒートシンク110と熱的に接続されている。そして保護部における最も面積の小さい端面はx−y平面に沿い、その端面から端子20が外部に露出されている。   The semiconductor element 100 includes a main body 10 and a plurality of terminals 20 attached and fixed to the main body 10. Although not shown, the main body 10 includes a chip on which a power element is formed and a protection unit that covers and protects the chip. One end of the terminal 20 is electrically connected to the chip, and is covered and protected by a protection unit. The other end of the terminal 20 is exposed to the outside from the protective portion and connected to the external terminal 130 via the solder 40. The protective part has a rectangular shape and has two surfaces each having three different areas. The main surface having the largest area in the protection portion is thermally connected to the heat sink 110 along the xz plane. And the end surface with the smallest area in a protection part follows the xy plane, and the terminal 20 is exposed outside from the end surface.

端子20における保護部から外部に露出された部位は、本体部10から離れる方向に延びた足部21と、足部21の端部に設けられ、半田浴に浸漬される接続部22と、を有する。図1に示すように足部21は屈曲してy−z平面にてL字形状を成している。そして図2に示すように足部21はy方向に延びた形状を成している。また図1および図2に示すようにケース120は円筒形状を成しており、複数の端子20それぞれの有する足部21はケース120の形状に応じた長さを有している。そのため複数の端子20それぞれの有する足部21の少なくとも1つは、他の端子20の有する足部21とはy方向の長さが異なっている。   The part of the terminal 20 exposed to the outside from the protection part includes a foot part 21 extending in a direction away from the main body part 10 and a connection part 22 provided at an end of the foot part 21 and immersed in a solder bath. Have. As shown in FIG. 1, the foot 21 is bent to form an L shape in the yz plane. And as shown in FIG. 2, the foot | leg part 21 has comprised the shape extended in the y direction. As shown in FIGS. 1 and 2, the case 120 has a cylindrical shape, and the foot portion 21 of each of the plurality of terminals 20 has a length corresponding to the shape of the case 120. For this reason, at least one of the foot portions 21 of each of the plurality of terminals 20 has a length in the y direction different from the foot portions 21 of the other terminals 20.

図3に示すように、接続部22は一部が切り欠くことでギャップを有する環状(フック形状)を成している。ギャップはx方向に位置し、接続部22はx方向に開口している。接続部22はギャップを介して対向する2つの端面22a,22bと、それら端面22a,22bそれぞれと連結される内面22cと、端面22a,22bそれぞれを介して内面22cと連結される外面22dと、を有する。上端面22aはz−x平面に沿う形状を成し、下端面22bは内面22cによって囲まれた領域(以下、単に孔と示す)から外に向かうにしたがってギャップの幅が広がるように傾斜した形状を成している。より詳しく言えば、下端面22bは孔の中心CP(図3に示す×印)から外に向かうにしたがって中心CP周りの方向に沿うギャップの幅が広がるように傾斜している。より図3の形態に即して表現すると、下端面22bは中心CPからx方向に沿って紙面左方に向かうにしたがってy方向に沿うギャップの幅が広がるように傾斜している。この構成により、下端面22bにおける外面22dとの連結端と上端面22aにおける外面22dとの連結端とのy方向におけるギャップの幅d1(外開口面の幅d1)は、下端面22bにおける内面22cとの連結端と上端面22aにおける内面22cとの連結端とのy方向におけるギャップの幅d2(内開口面の幅d2)よりも長くなっている。   As shown in FIG. 3, the connection portion 22 has a ring shape (hook shape) having a gap when a part thereof is notched. The gap is located in the x direction, and the connecting portion 22 opens in the x direction. The connecting portion 22 has two end faces 22a and 22b facing each other through a gap, an inner face 22c connected to each of the end faces 22a and 22b, an outer face 22d connected to the inner face 22c via each of the end faces 22a and 22b, Have The upper end surface 22a has a shape along the zx plane, and the lower end surface 22b has an inclined shape so that the width of the gap increases as it goes outward from a region surrounded by the inner surface 22c (hereinafter simply referred to as a hole). Is made. More specifically, the lower end surface 22b is inclined so that the width of the gap along the direction around the center CP increases from the center CP of the hole (marked with x in FIG. 3) toward the outside. More specifically, the lower end surface 22b is inclined so that the width of the gap along the y direction increases from the center CP toward the left side of the drawing along the x direction from the center CP. With this configuration, the gap width d1 (the width d1 of the outer opening surface) between the connecting end of the lower end surface 22b and the outer surface 22d and the connecting end of the upper end surface 22a and the outer surface 22d is the inner surface 22c of the lower end surface 22b. And a gap width d2 (width d2 of the inner opening surface) in the y direction between the connection end of the upper end surface 22a and the connection end of the upper end surface 22a with the inner surface 22c.

内面22cは、半田浴150に最も近い底線BL(図3に示す○印)によって第1内面22eと第2内面22fに分割されている。底線BLは足部21から最も遠くに位置し、z方向に沿っている。第1内面22eは上端面22aに連結され、上端面22aから底線BLに向かって連続的に近づく面形状を成している。そして第2内面22fは下端面22bに連結され、下端面22bから底線BLに向かって連続的に近づく面形状を成している。また第1内面22eはx方向において上端面22aと連続的に連結され、第2内面22fは下端面22bと不連続的に連結されている。   The inner surface 22c is divided into a first inner surface 22e and a second inner surface 22f by a bottom line BL (circle mark shown in FIG. 3) closest to the solder bath 150. The bottom line BL is located farthest from the foot 21 and extends along the z direction. The first inner surface 22e is connected to the upper end surface 22a and has a surface shape that continuously approaches from the upper end surface 22a toward the bottom line BL. The second inner surface 22f is connected to the lower end surface 22b and has a surface shape that continuously approaches from the lower end surface 22b toward the bottom line BL. The first inner surface 22e is continuously connected to the upper end surface 22a in the x direction, and the second inner surface 22f is discontinuously connected to the lower end surface 22b.

次に、端子20に溶融した半田40を付着させる付着方法を図4〜図6に基づいて説明する。先ず図4に示すように、溶融した半田40の蓄えられた半田浴150の液面に対して複数の端子20それぞれの足部21の延びる方向が直交するように、半導体素子100を半田浴150の上方に配置させる。以上が準備工程である。   Next, an attachment method for attaching the molten solder 40 to the terminal 20 will be described with reference to FIGS. First, as shown in FIG. 4, the semiconductor element 100 is placed in the solder bath 150 so that the extending direction of the legs 21 of each of the plurality of terminals 20 is orthogonal to the liquid level of the solder bath 150 in which the molten solder 40 is stored. Is placed above. The above is the preparation process.

準備工程後、図5に示すように複数の端子20を半田浴150に近づけ、複数の端子20それぞれの接続部22を半田浴150に浸漬する。この際、最も短い足部21への溶融した半田40の付着を回避しつつ、全ての接続部22を半田浴150に浸漬させる。以上が浸漬工程である。   After the preparation step, as shown in FIG. 5, the plurality of terminals 20 are brought close to the solder bath 150, and the connection portions 22 of the plurality of terminals 20 are immersed in the solder bath 150. At this time, all the connecting portions 22 are immersed in the solder bath 150 while avoiding adhesion of the molten solder 40 to the shortest foot portion 21. The above is an immersion process.

浸漬工程後、図6に示すように半田浴150に浸漬された全ての接続部22を半田浴150から引き上げる。こうすることで接続部22それぞれに溶融した半田40を付着させる。以上が引き上げ工程である。   After the dipping process, all the connecting portions 22 dipped in the solder bath 150 are pulled up from the solder bath 150 as shown in FIG. In this way, the molten solder 40 is attached to each of the connection portions 22. The above is the pulling process.

引き上げ工程後、半田40の付着した接続部22を半田浴150の液面上に所定時間留まらせる。こうすることで、接続部22の内面22cに表面張力によって膜状に付着した半田40を、半田40が自重のために半田浴150に流れ落ちようとする際に生じる流動、および、ギャップを埋める半田40が自身の表面積を最小にしようとする際に生じる流動によって破壊する。このように余分な半田40を半田浴150に戻すことで接続部22に付着する半田40の厚さを調整する。以上が厚さ調整工程である。   After the pulling process, the connecting portion 22 to which the solder 40 is attached is left on the liquid surface of the solder bath 150 for a predetermined time. By doing so, the solder 40 that adheres to the inner surface 22c of the connecting portion 22 in a film shape due to surface tension flows when the solder 40 tries to flow down into the solder bath 150 due to its own weight, and the solder that fills the gap. 40 breaks down due to the flow that occurs when trying to minimize its own surface area. Thus, the thickness of the solder 40 attached to the connecting portion 22 is adjusted by returning the excess solder 40 to the solder bath 150. The above is the thickness adjusting step.

図7〜図11に基づいて引き上げ工程と厚さ調整工程における半田40の流動を説明する。図7に示すように、端子20を半田浴150に浸漬した後に上端面22aが外部に露出されるように接続部22を半田浴150の液面から第1距離だけ引き上げる。この際、内面22cは半田浴150にあるので、接続部22の孔とギャップは半田40によって埋められている。   The flow of the solder 40 in the pulling process and the thickness adjusting process will be described with reference to FIGS. As shown in FIG. 7, after the terminal 20 is immersed in the solder bath 150, the connecting portion 22 is pulled up from the liquid surface of the solder bath 150 by a first distance so that the upper end surface 22a is exposed to the outside. At this time, since the inner surface 22 c is in the solder bath 150, the hole and the gap of the connection portion 22 are filled with the solder 40.

次に図8に示すように下端面22bのすべてが外部に露出されるように接続部22を第2距離だけ引き上げる。この際、ギャップを埋める半田40が半田浴150に蓄えられた半田40から離される。ギャップを埋める半田40には、自重によって半田浴150に流れ落ちようとする力とともに、表面積(外部雰囲気との接触面積)を最小にしようする力が生じる。上記したようにギャップの幅は中心CPから外に向かうにしたがって広がっている。そのため、ギャップを埋める半田40は中心CPに向かって流動しようとする。換言すれば、ギャップを埋める半田40は外開口面から内開口面に向かって流動しようとする。この際、図8(a)に示すように、外開口面を閉塞する半田40の表面張力が切れ、ギャップを埋める半田40は内開口面に向かって流動する。   Next, as shown in FIG. 8, the connecting portion 22 is pulled up by the second distance so that the entire lower end surface 22b is exposed to the outside. At this time, the solder 40 filling the gap is separated from the solder 40 stored in the solder bath 150. In the solder 40 that fills the gap, a force that tries to flow down to the solder bath 150 by its own weight and a force that minimizes the surface area (contact area with the external atmosphere) are generated. As described above, the gap width increases from the center CP toward the outside. Therefore, the solder 40 filling the gap tends to flow toward the center CP. In other words, the solder 40 filling the gap tends to flow from the outer opening surface toward the inner opening surface. At this time, as shown in FIG. 8A, the surface tension of the solder 40 closing the outer opening surface is cut, and the solder 40 filling the gap flows toward the inner opening surface.

次に図9に示すように接続部22のすべてが外部に露出されるように接続部22を第3距離だけ引き上げる。この際、上記した表面積を最小にしようとする半田40の流動とともに、孔を埋める半田40は自重によって半田浴150へと流れ落ちようと流動する。   Next, as shown in FIG. 9, the connecting portion 22 is pulled up by the third distance so that the entire connecting portion 22 is exposed to the outside. At this time, along with the flow of the solder 40 for minimizing the surface area, the solder 40 filling the hole flows to flow down to the solder bath 150 by its own weight.

更に図10に示すように、接続部22を第4距離だけ引き上げる。第3距離から第4距離まで引き上げている際においても上記した流動が継続されるが、まだ余分な半田40が孔内にある。そのために接続部22の表面に付着した半田40の厚さは未だに不均一である。   Further, as shown in FIG. 10, the connecting portion 22 is pulled up by the fourth distance. The flow described above is continued even when the distance is raised from the third distance to the fourth distance, but there is still excess solder 40 in the hole. Therefore, the thickness of the solder 40 attached to the surface of the connection portion 22 is still nonuniform.

しかしながら図11に示すように、接続部22を第5距離まで引き上げて所定時間留まらせる。こうすることで孔内にある余分な半田40を上記した流動によって流れ落とし、接続部22の表面に付着した半田40の厚さを均一とする。   However, as shown in FIG. 11, the connecting portion 22 is pulled up to the fifth distance and stays for a predetermined time. In this way, excess solder 40 in the hole is caused to flow down by the above-described flow, and the thickness of the solder 40 attached to the surface of the connection portion 22 is made uniform.

次に、本実施形態に係る半導体素子100の作用効果を説明する。本実施形態で示した半導体素子100とは異なり、接続部22がギャップを有さずに環状を成す場合、接続部22を半田浴150から引き上げた際、自身の内面22cに表面張力によって膜状に溶融した半田40が付着する。この構成において複数の足部21それぞれの長さが等しい場合、複数の足部21それぞれを半田浴150に浸漬させずに複数の接続部22だけを半田浴150に浸漬することができる。そのために端子20を半田浴150から引き上げた際、接続部22の内面22cに膜状に半田40が付着していたとしても、その膜に足部21に付着した半田40が流動することが抑制され、それによって膜の強度が高まることが抑制される。そのために膜状の半田40の自重による流動によって膜を壊すことができる。   Next, functions and effects of the semiconductor element 100 according to this embodiment will be described. Unlike the semiconductor element 100 shown in the present embodiment, when the connection portion 22 has a ring shape without a gap, when the connection portion 22 is pulled up from the solder bath 150, the inner surface 22c of the connection portion 22 is formed into a film by surface tension. The molten solder 40 adheres to the surface. In this configuration, when the lengths of the plurality of foot portions 21 are equal, only the plurality of connection portions 22 can be immersed in the solder bath 150 without immersing each of the plurality of foot portions 21 in the solder bath 150. Therefore, when the terminal 20 is pulled up from the solder bath 150, even if the solder 40 adheres to the inner surface 22c of the connecting portion 22 in a film shape, the solder 40 attached to the foot portion 21 is prevented from flowing to the film. As a result, an increase in the strength of the film is suppressed. Therefore, the film can be broken by the flow of the film-like solder 40 due to its own weight.

しかしながら半導体素子100を収納するケース120の形状や外部端子130の配置などの設計上の理由から足部21の長さが異なる場合、少なくとも1つの足部21を半田浴150に浸漬させなくてはならず、足部21に付着する半田40の量が異なる。また複数の接続部22それぞれが半田浴150に浸漬される時間も異なることとなる。そのため接続部22を半田浴150から引き上げた際、接続部22に膜状に付着した半田40に、足部21に付着した半田40が流動し、それによって膜の強度が高まる。そして膜が自重による流動によって壊れる前に半田40が固まり、本来であれば貫通しているはずの接続部22の孔が半田40によって埋められてしまう。したがって外部端子130を接続部22の孔に通すことで外部端子130と端子20とを接続することができなくなる。   However, if the length of the foot 21 is different for design reasons such as the shape of the case 120 that houses the semiconductor element 100 and the arrangement of the external terminals 130, at least one foot 21 must be immersed in the solder bath 150. Instead, the amount of solder 40 attached to the foot 21 is different. Further, the time during which each of the plurality of connecting portions 22 is immersed in the solder bath 150 is also different. Therefore, when the connecting portion 22 is pulled up from the solder bath 150, the solder 40 attached to the foot portion 21 flows into the solder 40 attached to the connecting portion 22 in a film shape, thereby increasing the strength of the film. Then, the solder 40 is solidified before the film is broken by the flow due to its own weight, and the hole of the connecting portion 22 that should have been penetrated is filled with the solder 40. Therefore, the external terminal 130 and the terminal 20 cannot be connected by passing the external terminal 130 through the hole of the connection portion 22.

これに対して本実施形態では、接続部22は一部が切り欠くことでギャップを有する環状を成している。したがって、接続部22が半田浴150に浸漬された後に引き上げられた際、接続部22の内面22cに表面張力によって膜状に付着した半田40を、ギャップを埋める半田40が自重のために半田浴150に流れ落ちようとする際に生じる流動(以下、第1流動と示す)、および、ギャップを埋める半田40が自身の表面積を最小にしようとする際に生じる流動(以下、第2流動と示す)によって破壊することができる。これによって接続部22の孔が半田40によって埋められることが抑制され、外部端子130と端子20とを接続できなくなることが抑制される。更に言えば、上記した流動によって余分な半田40が半田浴150に戻されるので、接続部22に付着する半田40の厚さが調整される。   On the other hand, in this embodiment, the connection part 22 has comprised the cyclic | annular form which has a gap by notching part. Therefore, when the connecting portion 22 is pulled up after being immersed in the solder bath 150, the solder 40 adhered to the inner surface 22c of the connecting portion 22 in a film shape by surface tension is used, and the solder 40 filling the gap has a weight of the solder bath. The flow that occurs when it flows down to 150 (hereinafter referred to as the first flow) and the flow that occurs when the solder 40 filling the gap minimizes its surface area (hereinafter referred to as the second flow). Can be destroyed by. As a result, the hole of the connecting portion 22 is suppressed from being filled with the solder 40, and the external terminal 130 and the terminal 20 can be prevented from being connected. Furthermore, since the excess solder 40 is returned to the solder bath 150 by the above-described flow, the thickness of the solder 40 attached to the connection portion 22 is adjusted.

ギャップはx方向に位置する。これによれば、接続部22を半田浴150に浸漬させる際に、ギャップがy方向に位置する構成(ギャップが半田浴150に対して対向する位置に設けられた構成)とは異なり、第1流動と第2流動とが相殺し合うことが抑制される。第1流動は半田浴150に近づく方向に進み、第2流動は接続部22の中心に向かう方向に進む。上記した比較構成の場合、第1流動は半田浴150に近づく方向に進み、第2流動は半田浴150から遠ざかる方向に進む。そのために2つの流動が相殺し合う。これに対して上記構成の場合、第1流動はx方向に進み、第2流動はy方向に進む。そのために比較構成と比べて2つの流動が相殺し合うことが抑制され、両流動によって生じる応力によって膜が破壊される。この結果、接続部22の孔が半田40によって埋められることが抑制され、外部端子130と端子20とを接続できなくなることが抑制される。そして接続部22に付着する半田40の厚さが調整される。   The gap is located in the x direction. According to this, when the connecting portion 22 is immersed in the solder bath 150, unlike the configuration in which the gap is located in the y direction (configuration in which the gap is provided facing the solder bath 150), the first It is suppressed that the flow and the second flow cancel each other. The first flow proceeds toward the solder bath 150 and the second flow proceeds toward the center of the connection portion 22. In the case of the comparative configuration described above, the first flow proceeds in a direction approaching the solder bath 150, and the second flow proceeds in a direction away from the solder bath 150. As a result, the two flows cancel each other. On the other hand, in the case of the above configuration, the first flow proceeds in the x direction and the second flow proceeds in the y direction. Therefore, the two flows are prevented from canceling each other as compared with the comparative configuration, and the film is broken by the stress generated by the two flows. As a result, the hole of the connecting portion 22 is suppressed from being filled with the solder 40, and the external terminal 130 and the terminal 20 are prevented from being connected. And the thickness of the solder 40 adhering to the connection part 22 is adjusted.

中心CPから外に向かうにしたがってギャップの幅が広がるように傾斜している。これによれば、中心CPから外に向かうにしたがってギャップの幅が狭まる構成と比べて、接続部22を半田浴150から引き上げた際、端面22a,22bと外面22dとの成す2つの端部間(外開口面)にて生じる第2流動が促進され、膜が壊れやすくなる。この結果、接続部22の孔が半田40によって埋められることが抑制され、外部端子130と端子20とを接続できなくなることが抑制される。そして接続部22に付着する半田40の厚さが調整される。   The gap is inclined so that the width of the gap increases from the center CP toward the outside. According to this, when the connection portion 22 is pulled up from the solder bath 150, the gap between the two end portions formed by the end surfaces 22a and 22b and the outer surface 22d is smaller than the configuration in which the gap width is narrowed toward the outside from the center CP. The second flow generated at the (outer opening surface) is promoted, and the membrane is easily broken. As a result, the hole of the connecting portion 22 is suppressed from being filled with the solder 40, and the external terminal 130 and the terminal 20 can be prevented from being connected. And the thickness of the solder 40 adhering to the connection part 22 is adjusted.

第1内面22eは上端面22aから底線BLに向かって連続的に近づく面形状を成し、第2内面22fは下端面22bから底線BLに向かって連続的に近づく面形状を成している。例えば、内面22e,22fの少なくとも一方が不連続的に底線BLに近づく面形状、すなわち、内面22e,22fの一部が底線BLから離れる方向に沿う面形状の場合、半田浴150から遠ざかるように、接続部22に膜状に形成された半田40が壊れる。そのため、膜状の半田40の壊れる速度が遅くなり、意図しない半田40が接続部22に取り残される虞がある。これに対して上記構成の場合、半田浴150に近づくように、接続部22に膜状に形成された半田40が壊れる。そのため上記した比較構成と比べて意図しない半田40が接続部22に取り残されることが抑制される。   The first inner surface 22e has a surface shape that continuously approaches from the upper end surface 22a toward the bottom line BL, and the second inner surface 22f has a surface shape that continuously approaches from the lower end surface 22b toward the bottom line BL. For example, when at least one of the inner surfaces 22e and 22f discontinuously approaches the bottom line BL, that is, when the inner surfaces 22e and 22f have a surface shape along a direction away from the bottom line BL, the distance from the solder bath 150 is increased. The solder 40 formed in a film shape on the connecting portion 22 is broken. For this reason, the breaking speed of the film-like solder 40 becomes slow, and there is a possibility that unintended solder 40 is left behind in the connection portion 22. On the other hand, in the case of the above configuration, the solder 40 formed in a film shape on the connection portion 22 is broken so as to approach the solder bath 150. Therefore, it is possible to suppress unintended solder 40 from being left in the connection portion 22 as compared with the above-described comparative configuration.

以上、本発明の好ましい実施形態について説明したが、本発明は上記した実施形態になんら制限されることなく、本発明の主旨を逸脱しない範囲において、種々変形して実施することが可能である。   The preferred embodiments of the present invention have been described above. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention.

本実施形態では半導体素子100がECU200に適用される例を示した。しかしながら、半導体素子100は長さの異なる複数の端子20の接続部22を半田浴150に浸漬することで半田40を接続部22に付着させるものであればよく、適用対象は限定されない。   In the present embodiment, an example in which the semiconductor element 100 is applied to the ECU 200 is shown. However, the semiconductor element 100 only needs to attach the solder 40 to the connection portion 22 by immersing the connection portions 22 of the terminals 20 having different lengths in the solder bath 150, and the application target is not limited.

本実施形態では本体部10はパワー素子が形成されたチップと、このチップを被覆保護する保護部と、を有する例を示した。しかしながら本体部10としては上記例に限定されず、端子20の一端が固定されるものであれば良い。   In the present embodiment, an example in which the main body unit 10 includes a chip on which a power element is formed and a protection unit that covers and protects the chip. However, the main body 10 is not limited to the above example, and may be any one as long as one end of the terminal 20 is fixed.

足部21は屈曲してy−z平面においてL字形状を成している例を示した。しかしながら足部21は屈曲していなくともよく、y方向に延びた部位を有していれば良い。   An example is shown in which the foot 21 is bent to form an L shape in the yz plane. However, the foot portion 21 does not have to be bent, and may have a portion extending in the y direction.

本実施形態では、上端面22aはz−x平面に沿う形状を成し、下端面22bは孔から外に向かうにしたがってギャップの幅が広がるように傾斜した形状を成している例を示した。しかしながら端面22a,22bの形状としては上記例に限定されない。   In the present embodiment, the upper end surface 22a has a shape along the zx plane, and the lower end surface 22b has an example in which the width of the gap is increased toward the outside from the hole. . However, the shape of the end faces 22a and 22b is not limited to the above example.

例えば図12に示すように、下端面22bがz−x平面に沿う形状を成し、ギャップの幅が一定の構成を採用することもできる。また図13に示すように、上端面22aはz−x平面に沿う形状を成し、下端面22bは孔から外に向かうにしたがってギャップの幅が狭まるように傾斜した形状を成していてもよい。   For example, as shown in FIG. 12, it is possible to adopt a configuration in which the lower end surface 22b has a shape along the zx plane and the gap width is constant. Further, as shown in FIG. 13, the upper end surface 22a has a shape along the zx plane, and the lower end surface 22b has an inclined shape so that the width of the gap becomes narrower toward the outside from the hole. Good.

本実施形態では特に言及しなかったが、図3に示すように内面22e,22fそれぞれの曲率が不定である例を示した。しかしながら図14に示すように、内面22e,22fそれぞれの曲率が一定であり、x−y平面における内面22cの成す輪郭線が円形を成していても良い。   Although not particularly mentioned in the present embodiment, an example is shown in which the curvatures of the inner surfaces 22e and 22f are indefinite as shown in FIG. However, as shown in FIG. 14, the curvature of each of the inner surfaces 22e and 22f may be constant, and the contour line formed by the inner surface 22c in the xy plane may be circular.

本実施形態では、第1内面22eは上端面22aから底線BLに向かって連続的に近づく面形状を成し、第2内面22fは下端面22bから底線BLに向かって連続的に近づく面形状を成している例を示した。しかしながら図15に示すように、第1内面22eは上端面22aから底線BLに向かって不連続的に近づく面形状を成し、第2内面22fは下端面22bから底線BLに向かって不連続的に近づく面形状を成していても良い。   In the present embodiment, the first inner surface 22e has a surface shape that continuously approaches from the upper end surface 22a toward the bottom line BL, and the second inner surface 22f has a surface shape that continuously approaches from the lower end surface 22b toward the bottom line BL. An example is shown. However, as shown in FIG. 15, the first inner surface 22e has a surface shape discontinuously approaching from the upper end surface 22a toward the bottom line BL, and the second inner surface 22f is discontinuous from the lower end surface 22b toward the bottom line BL. The surface shape which approaches may be comprised.

本実施形態ではギャップがx方向に位置する例を示した。しかしながら図16〜図19に示すようにギャップがy方向に位置しても良い。図16ではギャップが底線BLの上方に位置し、図17〜図19ではギャップの中に底線BLが位置する。そして図17〜図19では外面22dにおけるx方向において端面22a,22bと対向する部位の外径が半田浴150に近づくにつれて狭まるように傾斜している。そして図17および図19では端面22a,22bが内面22e,22fと不連続的に連結され、図18では端面22a,22bが内面22e,22fと連続的に連結されている。また図17および図18では端面22a,22b間のギャップのx方向の幅が一定であり、図19ではギャップのx方向の幅が中心から外に向かうにしたがって広がっている。なお、図17〜図19においては底線BLを図示していないが、上記した底線BLとは、接続部22が環状の場合に内面22cにおける足部21から最も離れた線である。   In the present embodiment, an example in which the gap is located in the x direction is shown. However, the gap may be positioned in the y direction as shown in FIGS. In FIG. 16, the gap is located above the bottom line BL, and in FIGS. 17 to 19, the bottom line BL is located in the gap. 17 to 19, the outer surface 22d is inclined so that the outer diameter of the portion facing the end surfaces 22a and 22b in the x direction becomes narrower as the solder bath 150 is approached. 17 and 19, the end surfaces 22a and 22b are discontinuously connected to the inner surfaces 22e and 22f. In FIG. 18, the end surfaces 22a and 22b are continuously connected to the inner surfaces 22e and 22f. 17 and 18, the width in the x direction of the gap between the end faces 22a and 22b is constant, and in FIG. 19, the width in the x direction of the gap increases from the center toward the outside. Although the bottom line BL is not illustrated in FIGS. 17 to 19, the above-described bottom line BL is a line farthest from the foot 21 on the inner surface 22 c when the connection part 22 is annular.

本実施形態では、下端面22bが孔から外に向かうにしたがってギャップの幅が広がるように傾斜した形状を成している例を示した。しかしながら図20〜図22に示すように、下端面22bがz−x平面に沿う形状を成した構成を採用することもできる。図20〜図22では上端面22aの形状が異なり、図20では上端面22aが孔から外に向かうにしたがってギャップの幅が広がるように傾斜した形状を成し、図21では上端面22aがz−x平面に沿う形状を成している。また図22では上端面22aが孔から外に向かうにしたがってギャップの幅が狭まるように傾斜した形状を成している.
本実施形態では、第1内面22eが上端面22aと連続的に連結された例を示した。しかしながら図23および図24に示すように、第1内面22eが上端面22aと不連続的に連結された構成を採用することもできる。図23ではギャップにおけるy方向の幅が一定であり、図24ではギャップにおけるy方向の幅が不定である。詳しく言えば、孔から外に向かうにしたがってギャップの幅が徐々に広がっている。
In the present embodiment, an example is shown in which the lower end surface 22b is inclined so that the width of the gap increases as it goes out of the hole. However, as shown in FIGS. 20 to 22, it is possible to adopt a configuration in which the lower end surface 22 b has a shape along the zx plane. 20 to 22, the shape of the upper end surface 22 a is different. In FIG. 20, the upper end surface 22 a is inclined so that the width of the gap increases as it goes out of the hole. In FIG. 21, the upper end surface 22 a is z. It has a shape along the -x plane. In FIG. 22, the upper end surface 22a is inclined so that the width of the gap becomes narrower as it goes out of the hole.
In the present embodiment, an example in which the first inner surface 22e is continuously connected to the upper end surface 22a is shown. However, as shown in FIGS. 23 and 24, a configuration in which the first inner surface 22e is discontinuously connected to the upper end surface 22a may be employed. In FIG. 23, the width of the gap in the y direction is constant, and in FIG. 24, the width of the gap in the y direction is indefinite. Specifically, the width of the gap gradually increases from the hole toward the outside.

本実施形態では特に言及しなかったが、図3に示すように、下端面22bと第2内面22fとの連結角度が鋭角である例を示した。しかしながら図25に示すように、下端面22bと第2内面22fとの連結角度が鈍角である構成を採用することもできる。なお、図23に示すように、上記した連結角度が直角である構成を採用することもできる。この連結角度の関係については、上端面22aと第1内面22eとにおいても同様である。   Although not particularly mentioned in the present embodiment, as shown in FIG. 3, an example is shown in which the connection angle between the lower end surface 22b and the second inner surface 22f is an acute angle. However, as shown in FIG. 25, a configuration in which the connection angle between the lower end surface 22b and the second inner surface 22f is an obtuse angle may be employed. In addition, as shown in FIG. 23, the above-described configuration in which the connection angle is a right angle can be employed. This connection angle relationship is the same for the upper end surface 22a and the first inner surface 22e.

本実施形態では底線BLがz方向に沿っている例を示した。しかしながら底線BLの形状としては上記例に限定されず、z−x平面に沿う形状であれば適宜採用することができる。   In the present embodiment, an example in which the bottom line BL is along the z direction is shown. However, the shape of the bottom line BL is not limited to the above example, and any shape that conforms to the zx plane can be adopted as appropriate.

本実施形態では浸漬工程において、最も短い足部21への溶融した半田40の付着を回避しつつ、全ての接続部22を半田浴150に浸漬させる例を示した。しかしながら、全ての足部21に溶融した半田40を付着させても良い。   In the present embodiment, an example in which all the connection portions 22 are immersed in the solder bath 150 while avoiding adhesion of the molten solder 40 to the shortest foot portion 21 in the dipping process is shown. However, the molten solder 40 may be attached to all the foot portions 21.

10・・・本体部
20・・・端子
21・・・足部
22・・・接続部
40・・・半田
100・・・半導体素子
150・・・半田浴
DESCRIPTION OF SYMBOLS 10 ... Main-body part 20 ... Terminal 21 ... Leg part 22 ... Connection part 40 ... Solder 100 ... Semiconductor element 150 ... Solder bath

Claims (5)

本体部(10)と、前記本体部に取り付け固定された複数の端子(20)と、を有し、複数の前記端子それぞれが溶融した半田(40)の蓄えられた半田浴(150)に浸漬された後、前記半田浴から引き上げられることで前記端子に溶融した前記半田が付着される半導体素子であって、
前記端子は、前記本体部から離れる方向に延びた足部(21)と、前記足部の端部に設けられ、前記半田浴に浸漬される接続部(22)と、を有し、
複数の前記端子それぞれの有する足部は前記半田浴に近づく方向に延びた形状を成し、
複数の前記端子それぞれの有する足部の少なくとも1つは他の前記端子の有する足部とは長さが異なっており、
前記接続部は一部が切り欠くことでギャップを有する環状を成すことを特徴とする半導体素子。
A main body (10) and a plurality of terminals (20) attached and fixed to the main body, each of the plurality of terminals being immersed in a solder bath (150) in which molten solder (40) is stored. A semiconductor element to which the molten solder is attached to the terminal by being pulled up from the solder bath after being
The terminal includes a foot portion (21) extending in a direction away from the main body portion, and a connection portion (22) provided at an end portion of the foot portion and immersed in the solder bath,
Each of the plurality of terminals has a leg extending in a direction approaching the solder bath,
At least one of the legs of each of the plurality of terminals has a different length from the legs of the other terminals,
The semiconductor device according to claim 1, wherein a part of the connection portion is notched to form a ring having a gap.
前記ギャップは、前記半田浴に近づく方向に直交する横方向に位置することを特徴とする請求項1に記載の半導体素子。   The semiconductor device according to claim 1, wherein the gap is located in a lateral direction orthogonal to a direction approaching the solder bath. 前記接続部は前記ギャップを介して対向する2つの端面(22a,22b)を有し、
2つの前記端面の内の少なくとも一方は、前記接続部の内面によって囲まれた領域の中心(CP)から外に向かうにしたがって、前記接続部の中心の周り方向に沿う前記ギャップの幅が広がるように傾斜していることを特徴とする請求項1または請求項2に記載の半導体素子。
The connecting portion has two end faces (22a, 22b) facing each other through the gap,
At least one of the two end faces is configured such that the width of the gap along the direction around the center of the connection portion increases as it goes outward from the center (CP) of the region surrounded by the inner surface of the connection portion. The semiconductor element according to claim 1, wherein the semiconductor element is inclined toward the surface.
前記接続部は前記ギャップを介して対向する2つの端面(22a,22b)を有し、
前記接続部の内面(22c)は、2つの前記端面の一方と前記半田浴に最も近い底線(BL)とを滑らかに連結する第1内面(22e)と、2つの前記端面の他方と前記底線とを滑らかに連結する第2内面(22f)と、を有し、
前記第1内面は、2つの前記端面の一方から前記底線に向かって、連続的に前記底線に近づく面形状を成し、
前記第2内面は、2つの前記端面の他方から前記底線に向かって、連続的に前記底線に近づく面形状を成していることを特徴とする請求項2または請求項3に記載の半導体素子。
The connecting portion has two end faces (22a, 22b) facing each other through the gap,
The inner surface (22c) of the connecting portion includes a first inner surface (22e) that smoothly connects one of the two end surfaces and the bottom line (BL) closest to the solder bath, the other of the two end surfaces, and the bottom line. A second inner surface (22f) for smoothly connecting the two,
The first inner surface has a surface shape that continuously approaches the bottom line from one of the two end faces toward the bottom line,
4. The semiconductor element according to claim 2, wherein the second inner surface has a surface shape that continuously approaches the bottom line from the other of the two end faces toward the bottom line. 5. .
請求項1〜4のいずれか1項に記載の前記半導体素子(100)の端子(20)に溶融した前記半田(40)を付着させる付着方法であって、
複数の前記端子を溶融した半田の蓄えられた前記半田浴(150)に近づけ、複数の前記端子それぞれの接続部(22)を前記半田浴に浸漬する浸漬工程と、
前記浸漬工程後、複数の前記端子それぞれを前記半田浴から引き上げる引き上げ工程と、
前記引き上げ工程後、前記半田の付着した前記接続部を前記半田浴の液面上に所定時間留まらせることで、前記接続部の内面(22c)に表面張力によって膜状に付着した前記半田を、前記ギャップを埋める前記半田が自重のために前記半田浴に流れ落ちようとする際に生じる流動、および、前記ギャップを埋める前記半田が自身の表面積を最小にしようとする際に生じる流動によって破壊し、余分な前記半田を前記半田浴に戻すことで前記接続部に付着する前記半田の厚さを調整する厚さ調整工程と、を有することを特徴とする付着方法。
An attachment method for attaching the melted solder (40) to the terminal (20) of the semiconductor element (100) according to any one of claims 1 to 4,
A dipping step in which the plurality of terminals are brought close to the solder bath (150) in which molten solder is stored, and the connection portions (22) of the plurality of terminals are immersed in the solder bath;
After the dipping step, a pulling step of pulling up each of the plurality of terminals from the solder bath,
After the pulling step, the solder attached to the solder is allowed to stay on the liquid surface of the solder bath for a predetermined time, so that the solder attached to the inner surface (22c) of the connecting part in a film form due to surface tension, Breaking due to the flow that occurs when the solder that fills the gap flows down into the solder bath due to its own weight, and the flow that occurs when the solder that fills the gap tries to minimize its surface area; A thickness adjusting step of adjusting the thickness of the solder attached to the connecting portion by returning the excess solder to the solder bath.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62234311A (en) * 1987-02-21 1987-10-14 株式会社村田製作所 Lead terminal material
JPH05275155A (en) * 1992-03-24 1993-10-22 Taiyo Yuden Co Ltd Method of connecting external connection terminal with circuit board
JP2004259747A (en) * 2003-02-24 2004-09-16 Mitsubishi Electric Corp Method of soldering semiconductor element and semiconductor device using the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62234311A (en) * 1987-02-21 1987-10-14 株式会社村田製作所 Lead terminal material
JPH05275155A (en) * 1992-03-24 1993-10-22 Taiyo Yuden Co Ltd Method of connecting external connection terminal with circuit board
JP2004259747A (en) * 2003-02-24 2004-09-16 Mitsubishi Electric Corp Method of soldering semiconductor element and semiconductor device using the same

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