JP2015070126A - Optical semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical semiconductor device in which an optical semiconductor element is resin encapsulated by a potting method and which is excellent in stability of light distribution characteristics at a low cost.SOLUTION: In an optical semiconductor device, as means for inhibiting broadening of a bottom face of an encapsulation resin part which covers an optical semiconductor element as a coating layer, a dam is formed by using a die bond material simultaneously with a die bonding process.

Description

  The present invention relates to an optical semiconductor device in which an optical semiconductor element is resin-sealed by a potting method.

  In an optical semiconductor device created by resin sealing, for example, for the purpose of stress relaxation to the LED element or laying of a wavelength conversion layer, sealing with the first sealing resin to cover the LED element as a coating layer In addition, there is known an LED light emitting device having a sealing portion configuration by a so-called multilayer mold sealed with a second sealing resin so as to cover the whole.

  FIG. 8 shows a cross-sectional view of an LED light emitting device 100 having a sealing portion configuration by the above-described multilayer mold as an example of the LED light emitting device. The LED light emitting device 100 is referred to as a chip type LED using the substrate with wiring 102 as a base. On the substrate 102, two positive and negative electrodes 105 and a wiring pattern extended from each electrode are laid. The LED element 101 is die-bonded to one electrode-side pattern, and the LED element 101 and the other electrode-side pattern are wire-bonded connected by a gold wire 106. The periphery of the LED element 101 is covered with a first sealing resin portion 103 by a potting method, and the whole is further sealed with a second sealing resin portion 104.

Here, when the LED element 101 is an element that is vulnerable to stress, such as a GaAs infrared LED element, the LED element 101 is accelerated due to the stress of the epoxy resin used in the second sealing resin portion 104. Since there is a concern that deterioration may be induced, a light-transmitting soft resin such as silicone is used for the first sealing resin portion 103 as a stress relaxation measure.
When the LED element 101 is a GaN-based blue LED element and the device 100 is a white LED light-emitting device, the first sealing resin portion 103 is a wavelength conversion layer, and a YAG phosphor with silicone resin as a binder to ensure UV resistance. What knead | mixed etc. is used.

  In the example of FIG. 8, the silicone resin used for the first sealing resin portion 103 has a low viscosity and tends to spread greatly after application on the substrate 102. It is difficult to stably mass-produce the shape of the first sealing resin portion 103. Further, in the example of FIG. 8, since the lens is formed in the second sealing resin portion 104, an example in which the deformation of the first sealing resin portion 103 has a great influence on the light distribution characteristics of the LED light emitting device. However, even in an LED light emitting device in which no other lens is formed, since the influence on the light distribution characteristic is increased, the yield is reduced.

  Therefore, as a measure for improving the shape stability, a method is considered in which a dam portion is formed by providing a resin material around the LED element 103 mounting position on the substrate 102 to prevent spreading. At this time, a resin material dedicated to dam formation is used as the resin material for forming the dam portion.

FIG. 9 shows a cross-sectional view of the white LED light emitting device 200 disclosed in Patent Document 1. As shown in FIG. The white LED light-emitting device 200 is an LED light-emitting device (referred to as PLCC type) that uses a package 202 in which an envelope is formed by insert-molding a heat-resistant resin on a lead frame 206. It is what. In the white LED light emitting device 200, when the phosphor is diffused throughout the resin filled in the housing portion of the LED element 201, loss due to excessive scattering increases. The phosphor is dispersed in the first sealing resin portion 203 that covers the substantially cylindrical shape, and the second sealing resin portion 204 filled in the storage portion is made of a transparent sealing resin, so that the storage portion is provided. The amount of light reflected by the reflector 205 thus increased increases the performance.
Also in this example, if the first sealing resin portion 203 is deformed, the reflected light distribution in the reflector 205 is also changed, so that it is expected to affect the light distribution characteristics.

JP 2005-57089 A

  The LED light emitting device 100 of FIG. 8 and the white LED light emitting device 200 of FIG. 9 are generally not uniform in shape because the first sealing resin portion that covers the periphery of the LED element is formed by a potting method. Therefore, there is a concern that the variation of the light distribution characteristic becomes large.

  Further, the LED light emitting device 100 of FIG. 8 and the white LED light emitting device 200 of FIG. 9 can form a dam part by drawing and heat-curing a dam material before mounting the LED element. The cost will increase due to an increase in man-hours. In addition, when the LED element is small, the drawing itself is difficult and the accuracy is naturally limited. Furthermore, there is a concern that a connection failure may occur due to contamination of the bonding pattern when the LED element is mounted.

  The present invention provides an optical semiconductor device in which an optical semiconductor element is resin-sealed by a potting method, and it is easy to create a dam for adjusting the sealing shape by the resin, and has excellent light distribution characteristics. The object is to provide a semiconductor device at low cost.

  To achieve the above object, according to an optical semiconductor device according to claim 1 of the present invention, in an optical semiconductor device in which an optical semiconductor element is resin-sealed by a potting method, the optical semiconductor element is placed on a base. By using the same material as the die bond material for bonding, a dam portion for sealing shape adjustment by the resin is formed, thereby forming a die bond for bonding the optical semiconductor element. The dam portion can be laid at the same time as the bonding material application and the heat-curing steps, and an optical semiconductor device can be obtained that is inexpensive and suppresses variations in light distribution characteristics.

  In order to achieve the above object, according to an optical semiconductor device according to a second aspect of the present invention, the dam portion is constituted by a dot marking, and the optical semiconductor device according to the first aspect, Thus, even when the optical semiconductor element is small, it is possible to apply the die bond material to the dam portion forming position by a stamping method which is a general die bond material application method, and it is easy to lay the dam portion. It becomes possible.

  In order to achieve the above object, according to an optical semiconductor device according to claim 3 of the present invention, the optical semiconductor element is die-bonded to a pattern of a substrate with wiring, with an element having a double-sided electrode structure as a base, The die bond material is a conductive type, and the laying portion of the dam portion is a part of the periphery of the semiconductor element, and is on the same pattern as the pattern to be die-bonded or a line pattern connected to them. In the optical semiconductor device according to claim 2, since the dam portion is formed simultaneously with die bonding of the optical semiconductor element, there is no influence of contamination on the die bond connection, and the dam portion is a pad to be second bonded. It can be arranged so that it does not form on or near the pattern, and the influence of contamination on the wire bond connection is also suppressed. It can be, it is possible to highly reliable optical semiconductor device.

  According to the present invention, in an optical semiconductor device in which an optical semiconductor element is resin-sealed by a potting method, an optical semiconductor device having an excellent stability of light distribution characteristics by adjusting the sealing shape by the resin is provided at low cost. can do.

FIG. 1 is a view showing an LED light emitting device according to an embodiment of the present invention. FIG. 2 is a view schematically showing the resin flow of the sealing resin portion when the dam portion is not laid, and FIG. 2A is a diagram in which the LED element 11 is die-bonded to the die-bonding pad before the coating resin is dropped. This is a partial representation of the state connected by a gold wire, and (b) represents the state after the sealing resin portion is formed as a coating layer. FIG. 3 is a diagram illustrating an example of a manufacturing process of the LED light emitting device according to the embodiment of the present invention. FIG. 4 is a view showing an LED light emitting device according to another embodiment of the present invention. FIG. 5 is a view showing an LED light emitting device according to another embodiment of the present invention. FIG. 6 is a view showing an LED light emitting device according to another embodiment of the present invention. It is a figure which shows the LED planar light-emitting device which applied the Example of this invention, (a) is a figure which shows an element mounting surface, (b) is a figure which shows an internal element connection diagram. It is a figure which shows sectional drawing of the LED light-emitting device by a prior art example. It is a figure which shows sectional drawing of the LED light-emitting device by another prior art example.

  The present invention provides an optical semiconductor device having a sealing resin portion covering an optical semiconductor element as a coating layer, wherein a dam portion using a die bond material is laid as a means for suppressing the expansion of the bottom surface of the sealing resin portion. And Details will be described with reference to FIGS. 1 to 7 as an embodiment.

Example 1
FIG. 1 shows an embodiment according to the present invention, in which a sealing portion is formed by a multilayer mold in which a dam portion is laid using a die bonding material as means for suppressing the expansion of the bottom surface of the sealing resin portion and the shape of the coating layer is stabilized. 1 shows an LED light emitting device 10 having a configuration. The LED light emitting device 10 is a chip type LED using a substrate with wiring 12 as a base, and the substrate 12 is provided with two positive and negative electrodes 13a1, 13b1 and 13a1, 13b1 for external connection provided at an end of the substrate. A die-bonding pad 13b2 and a 2nd bonding pad 13a2 are laid on the element mounting surface and extend from each of the LED elements 11 and 11 having a double-sided electrode structure bonded to the die-bonding pad 13b2 by a die-bonding layer 14. The fine gold wire 15 wire-bonded between the 2nd bonding pads 13a2, the first sealing resin portion 17 covering the LED element 11 formed by the potting method as a coating layer, and the entire sealing formed by the transfer molding method Equipped with a lens for condensing light It is constituted by the second sealing resin portion 18.

  Here, as a feature of the present invention, a dam portion 16 using a die bond material is placed on a line 13b3 connecting the die bonding pad 13b2 formed of a metal material and the electrode 13b1 so as to overlap with the outer edge of the die bonding pad 13b2. In other words, the resin of the sealing resin portion 17 flows from the die-bonding pad 13b2 toward the line 13b3, and serves as a means for suppressing shape distortion as a coating layer.

  FIG. 2 is a view schematically showing the resin flow of the sealing resin portion 17 when the dam portion 16 is not laid, and FIG. 2 (a) is a die-bonding pad 13b2 before the coating resin is dropped. FIG. 2 (b) shows a state after the sealing resin portion 17 is formed as a coating layer. FIG. 2 (b) shows a state in which the LED element 11 is die-bonded and connected by the fine gold wire 15. is there. When the dam part 16 is not laid, the resin of the sealing resin part 171 does not break if the resin edge tension is suppressed by the surface tension of the resin at the pattern edge part of the outer edge of the die-bonding pad 13b2, and the resin dripping amount is appropriate. In addition, the flow of the resin is directed in the direction of the line 13b3, and a ridge-shaped spread portion 19 is formed.

  According to the present invention, by providing the dam portion 16 on the wiring pattern that is easy to expand, the flow of the coating resin in the direction of the line 13b3 is prevented, the distortion of the shape is suppressed, and the die bond material is used for the dam portion 16. Therefore, it can be formed at the same time as the die bonding material coating process, and the man-hours are not increased. Furthermore, fine adjustment of the installation position of the dam part 16 is easy.

(Manufacturing process)
FIG. 3 shows an example of the manufacturing process of the LED light emitting device 10 according to the present invention, and detailed description will be added in the following flow. In general, a chip-type LED such as the LED light emitting device 10 has a process from a) a die-bonding material application process to an e) resin sealing process, which will be described later, using a collective substrate on which a plurality of wiring-attached substrates 12 are attached. Although the process is a batch process, in FIG. 3, one apparatus included in the workpiece is simplified, and each process is depicted as a view from the top and side.

In the die-bonding material application process shown in (a), a plurality of substrates with wiring 12 each having patterns 13b1 and 13a1 corresponding to positive and negative electrodes applied to a substrate made of an organic base material such as BT resin or a ceramic base material, as unit substrates. Is prepared as a workpiece, and a die bond material is applied to a position where the die bond layer 14 is formed. At the same time, the dam portion 16 is formed from a die bond material by stamping, for example. In addition, the pattern given to the board | substrate 12 with a wiring shown in the figure mounts the LED element 11 of a double-sided electrode structure, and the die-bonding material used becomes a conductive type, and generally conductive such as silver particles in an epoxy binder. What knead | mixed the property filler is used.

In the die bonding step shown in (b), after the LED element 11 is placed on the uncured die bonding layer 14. The LED element 11 and the bonding pattern 13b2 are bonded to each other through the die bond layer by heating and curing the die bond layer 14. At this time, the resin of the dam portion 16 is also cured. In addition, although the binder resin in die-bonding material reduces a viscosity by heating, since the mixing rate of silver particles is comparatively high, the expansion of an application area | region is suppressed.

In the wire bonding step shown in (c), the LED element 11 and the 2nd bonding pad 13a2 are generally connected by the gold thin wire 15 by an ultrasonic thermocompression type wire bonder.

In the coating step shown in (d), after the coating resin is dropped on the upper surface of the LED element, the resin flows, and the spreading at the pattern edge portion and the dam portion 16 on the outer edge of the die-bonding pad 13b2 is suppressed. Then, the sealing resin portion 17 is formed as a coating layer by curing. In this example, as described above, the coating layer is applied to form a wavelength conversion layer including a stress relaxation layer and a phosphor. For example, a silicone resin is used as a resin for the coating layer.

In the resin sealing step shown in (e), an epoxy resin or silicone resin is used as a sealing resin by a transfer mold method, and a lens for providing a light collecting function is provided while covering the sealing resin portion 17 and the gold wire 15. The sealing resin portion 18 is formed.

As described above, the steps from a) to e) are performed by using the collective substrate with the wiring-equipped substrate 12 as a unit substrate as a workpiece. Completion.

(Example 2)
FIG. 4 shows an example of the LED 20 having the same configuration as that of the LED light emitting device 10, but the LED element 21 having a double-sided electrode structure has a large size. FIG. 4A shows a die bonding material coating process, a die bonding process, and a wire bonding process. It is a figure which shows the element mounting surface in the stage which passed through.

  The substrate 22 extends from each of the two positive and negative electrodes 23a1, 23b1 for external connection and the electrodes 23a1, 23b1 provided at the end of the substrate 22, and the die bonding pad 23b2 and the 2nd bonding pad 23a2 are provided on the element mounting surface. In the present example, the line 23b3 connecting the die bonding pad 23b2 and the electrode 23b1 is widened in order to diffuse the heat generated from the LED element 21. The application of the die bond material is generally performed by a stamping method in the case of an LED element of about 1 mm even if the element size is large. In this example, as shown in FIG. 4A, simultaneously with the application of the die bond material. The dam part 26 is also laid by a stamping method, and is composed of three stippling marks.

  After the die bonding material is applied, the LED element 21 is bonded to the die bonding pad 23b2 by the die bonding layer 24, and the LED element 21 and the 2nd bonding pad 23a2 are wire-bonded by the gold wire 25.

  FIG. 4B is a diagram showing the coating process, and a first sealing resin portion 27 that covers the LED element 21 by a potting method is formed as a coating layer. The LED light-emitting device 20 is also a type having a sealing part configuration by a multilayer mold, and after the coating process, the sealing resin part 17 and the gold wire 15 are connected in the resin sealing process in the same manner as the LED light-emitting device 10 process. A covering sealing resin portion is formed (not shown).

  In this example, the dam portion 26 is composed of a set of point-scribing marks with an interval, but by adjusting the interval by the viscosity of the resin, it can function as a means for suppressing distortion of the shape as a coating layer. . As described above, the position of the point marking is easily changed because the stamping teaching data is only changed.

  In addition, although the dam part 26 of the LED light-emitting device 20 is drawn as what is comprised by the collection of the point marking by stamping, it is not limited to this. When the size of the LED element is increased and the die bonding material is applied by mask printing or dispenser drawing, it is naturally preferable to lay the dam portion 26 in a linear shape.

(Example 3)
FIG. 5 shows an LED light emitting device 30 on which an LED element 31 having a single-sided electrode structure is mounted as another embodiment using the present invention, and shows the element mounting surface after the coating process is completed. .

  The substrate 32 extends from two externally connected positive and negative electrodes 33a1 and 33b1 and electrodes 33a1 and 33b1 provided at end portions of the substrate 32, and two 2nd bonding pads 33a2 and 33b2 and two electrodes 33a1 and 33b1. The die bonding pad 33c1 is laid as an independent pattern. The LED element 31 is bonded onto the die bonding pad 33c1 via the die bonding layer 34, and the LED element 31 and the two 2nd bonding pads 33a2 and 33b2 are connected by two gold thin wires 35a and 35b.

  The dam portion 36 is laid simultaneously with the application of the die bond material. In this example, the dam portion 36 is composed of a plurality of dot marking marks so as to surround the LED element 31. Further, the position of the dot marking mark is located on the die-bonding pad 33c1 or on the substrate surface (base material surface) between the die-bonding pad 33c1 and the 2nd bonding pad 33a2 or 33b2.

  In the above-mentioned Example 1 and Example 2, since the LED element to be mounted is a double-sided electrode structure, the die bond material is a conductive type including conductive particles such as silver particles, and avoids a short circuit accident due to a shift in coating position or silver migration. For this reason, it is necessary to restrict the die bonding material application region for forming the dam part on the pattern of the die bonding pad or on the line pattern connected to them.

  Since the LED element used in this example has a single-sided electrode structure and the die bond material may be a non-conductive type, the application region is not electrically restricted. Therefore, as shown in FIG. 5, the dam portion 36 can be disposed in the vicinity of the 2nd bonding pads 33a2 and 33b2. However, it is preferable to avoid application onto the 2nd bonding pads 33a2 and 33b2 because there is a possibility of contamination due to bleed-out with a resin of a die bond material.

  In addition, the non-conductive type die-bonding material for the LED element is kneaded with a filler such as alumina for imparting thermal conductivity, has a relatively high viscosity, and is generally adjusted in thixotropy. Thus, shape retention is also good when used as the dam portion 36.

  Also in this example, the dam part 36 of the LED light emitting device 30 is drawn as being constituted by a set of point marking marks by stamping. However, the present invention is not limited to this, and the die bonding material is applied by mask printing or dispenser drawing. In this case, of course, it is preferable to lay the dam portion 36 in a linear shape. Although the dam portion 36 has a wide application area and the amount of die bond material used is large, the material cost of the non-conductive type die bond material is generally lower than that of the conductive type.

  After the wire bonding step, a first sealing resin portion 37 that covers the LED element 31 as a coating layer is formed by a potting method. The LED light emitting device 30 is also of a type having a sealing part configuration by a multilayer mold. After the coating process, the first sealing resin part 37 and the resin sealing process are performed in the same manner as in Example 1 and Example 2. A second sealing resin portion that covers the gold wires 25a and 25b is formed (not shown).

Example 4
The present invention is effective not only for LED light-emitting devices having a sealing part configuration with a multilayer mold but also for LED light-emitting devices having a single-mold sealing part configuration without a coating layer for shape control of the sealing resin part. It is possible to form a simple dam portion at low cost.

  FIG. 6 shows an element mounting surface of an LED light-emitting device 40 having a single-mold sealing portion configuration in which an LED element 41 having a single-sided electrode structure is mounted as another embodiment using the present invention and does not have a coating layer. FIG.

  The substrate 42 includes two positive and negative electrodes 43a1 and 43b1 for external connection provided at the end of the substrate 42, and U-shaped groove-shaped patterns 43a3 and 43b3 inside the pattern on the substrate element mounting surface of the electrodes 43a1 and 43b1. A die-bonding pad 43c1 is laid in the center portion of the substrate 40 as a pattern independent of the two land-connected island-shaped 2nd bonding pads 43a2 and 43b2 and the two electrodes 43a1 and 43b1.

  In this example, the dam portion 46 is formed by drawing a non-conductive type die bond material in a ring shape with a dispenser simultaneously with the application of the die bond material to the formation position of the die bond layer 44 on the die bonding pad 43c1. The two 2nd bonding pads 43a2 and 43b2 are laid around the two. A part of the dam portion 46 is arranged near the 2nd bonding portion. However, due to the U-shaped groove-shaped extraction patterns 43a3 and 43b3, contamination of the 2nd bonding pads 43a2 and 43b2 due to bleed-out of the resin of the die bonding material or the like. Is suppressed.

  The LED element 41 is bonded to the die bonding pad 43c1 via the die bond layer 44, and the LED element 41 and the two 2nd bonding pads 43a2 and 43b2 are connected by two gold thin wires 45a and 45b.

  The sealing resin portion 47 is formed by glove top sealing so as to cover the LED element 41 and the fine gold wires 45a and 45b by a potting method, and is applied to the first resin sealing portion as the coating layer in Examples 1 to 3. In comparison, the amount of resin is large and the sealing height is also high. Therefore, the height of the dam portion 46 is also required as compared with the first to third embodiments. In this example, the amount of applied resin is increased by applying the die bond material to the position where the dam portion 46 is formed by dispenser drawing, and the height of the dam portion 46 is earned.

(Example 5)
FIG. 7 is an example showing an LED planar light emitting device 50 having a globe top-sealed COB structure to which Example 4 is applied, and FIG. 7A is a diagram showing an element mounting surface. The apparatus 50 has a diffusion plate mounted on the upper surface of the frame 58, but here, the diffusion plate is drawn in a watermarked state. FIG. 7B shows an internal element connection diagram of the device 50.

  The apparatus 50 is made of a substrate 52, a heat resistant resin, and a frame body 58 provided so as to surround the outer edge of the substrate 52. The device 50 is placed on the substrate 52 in a distributed manner at a predetermined interval. The LED element 51 having a plurality of single-sided electrode structures wire-bonded to the provided wiring pattern by gold fine wires, and the LED element 51 and the gold fine wires are covered in a glove top shape by suppressing the spread by the dam 56 And a diffusion plate (not shown) mounted on the upper surface of the frame body 58.

  In order to effectively dissipate heat from the LED elements 51, the substrate 52 is formed by forming a wiring pattern on an aluminum plate material via an insulating layer (aluminum substrate). The wiring pattern is provided in a substantially strip-like wide pattern with patterns 53a1, 53c1, 53d1, 53c2, 53d2, 53c3, 53d3, 53c4, and 53b1 arranged at predetermined intervals. The patterns 53a1 and 53b1 are patterns that are wire-bonded and are positive and negative electrode patterns that supply power, and are connected to power terminals provided on the back surface of the device 50 (not shown). Patterns 53c1, 53c2, 53c3, and 53c4 are patterns in which the LED element 51 is die-bonded. Patterns 53d1, 53d2, and 53d3 are patterns that are wire-bond connected, and are relay patterns that connect two LED elements 51 that are arranged in series with two fine gold wires.

  In this example, as shown in the internal element connection diagram pattern of FIG. 7B, the device 50 is a circuit in which the LED elements 51 are connected in 4 parallel 4 series, the pattern 53a1 is connected to the positive terminal, and the pattern 53b1 is the device. It is connected to 50 negative terminals. In FIG. 7B, the arrangement relationship of each pattern with respect to each connection point in the element connection is explicitly shown by a pattern code and a broken line frame.

  Each LED element 51 is connected to each LED bond with a 2nd bonding pad (not shown) similar to the configuration of the fourth embodiment (not shown), and the resin is applied to the position where the dam portion 46 is formed. 4 is performed by using a non-conductive type die-bonding material and dispenser drawing simultaneously with the die-bonding material application step.

  The LED planar light emitting device 50 applies a die bond material to the substrate 51 for the die bond layer and the dam portion 56, and then bonds the LED element 51 by die bonding and heat curing (at the same time, the resin of the dam portion 56 is cured). The LED element 51 and a predetermined 2nd bond pattern are wire-bonded with a fine gold wire, and then encapsulated in a glove top shape so as to cover each LED element 51 and the fine gold wire by potting a sealing resin, and resin-sealed After forming the portion 57, the frame body 58 is attached to the substrate 52, and the frame body 58 is mounted with a diffusion plate.

  In the LED planar light emitting device 50, the diffusion plate diffuses the light from the LED element which is a point light source appropriately, and smoothes the luminance change due to the position on the diffusion plate, thereby causing uneven luminance on the light emitting surface as the planar light emitting device. It works to suppress. However, in the case of a configuration such as the LED planar light emitting device 50, there is a large local luminance change on the light emitting surface due to the reflected light from the frame body 58 or the difference in light reflectance between the pattern surface of the substrate 52 and the base material surface. Part may occur.

  Even if the shape of the dam portion 56 is not a substantially circular ring shape, it can be deformed into an elliptical shape or the like in a range in which the resin sealing portion 57 does not break when the resin is dropped, and the diameter and height can be changed. Reflecting the prototype evaluation results, adjusting the shape of the dam portion 56, and actively changing the light distribution characteristics through the resin sealing portion 57 in each LED light emitting portion to suppress the above-mentioned local luminance change It is possible to make it. A, B, C in FIG. 7A shows an example of the shape of the dam portion 56 at each position after the shape correction. According to the method for forming the dam portion 56 according to the present invention, no additional process or mask correction is required, and the dispenser nozzle moving program for drawing the die bond material is corrected based on the prototype evaluation result. The LED planar light emitting device can be easily coped with only by finely adjusting the shape of the light emitting device 56 and is inexpensive and has an excellent light emission distribution.

  Up to the above, the embodiments have been described as relating to the LED light emitting device on which the LED element is mounted using the substrate with wiring as the base, but the present invention is not limited to this, and the base inserts a heat resistant resin into the lead frame A PLCC type package formed by forming an envelope may be used, and a semiconductor device using a light receiving element such as a laser diode element or a photodiode element may be used as another optical semiconductor element. For example, even in a light receiving device using a light receiving element such as a photodiode element, a coating layer that covers the light receiving element using a resin kneaded with a dye-type color filter is formed, and by applying the present invention, The stability of the light receiving angle characteristic can be improved.

10, 20, 30, 40 LED light-emitting device 11, 21, 31, 41, 51 LED element 12, 22, 32.42, 52 Board 13a1, 23a1, 33a1, 43a1, 53a1, 13b1, 23b1, 33b1, 43b1, 53b1 Electrode pattern 13a2, 23a2, 33a2, 43a2 2nd bonding pad 13b2, 23b2, 33b2, 43b2 Die bonding pad 13a3, 23a3, 33a3 Lines connecting die bonding pad and electrode pattern on one side 14, 24, 34, 44 Die bonding layers 15, 25, 35, 45 Gold wire 16, 26, 36, 46, 56 Dam part 17, 27, 37 First sealing resin part in LED light emitting device having sealing part structure by multilayer molding 18 Sealing part by multilayer molding LED light emission with configuration Second sealing resin part 43a3, 43b3 U-shaped groove-shaped pattern 47, 57 Sealing resin part 53c1, 53c2, 53c3, 53c4 Die-bonded pattern 53d1, 53d2, 53d3 To connect the two fine gold wires Relay pattern

Claims (3)

In an optical semiconductor device in which an optical semiconductor element is resin-sealed by a potting method, a dam portion for adjusting a sealing shape by the resin is made of the same material as a die bond material for bonding the optical semiconductor element on a base. An optical semiconductor device characterized in that is formed. The optical semiconductor device according to claim 1, wherein the dam portion is constituted by a dot marking. The optical semiconductor element has a double-sided electrode structure as a base and is die-bonded to the pattern of the substrate with wiring, the die bond material is a conductive type, and the laying portion of the dam part is a part of the periphery of the semiconductor element 3. The optical semiconductor device according to claim 1, wherein the optical semiconductor device is on the same pattern as a die-bonded pattern or a line pattern connected thereto.

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