JP2015070095A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can form a film having high productivity and high quality.SOLUTION: A substrate processing apparatus for sequentially supplying on a surface of a substrate, at least two types of reaction gases which react with each other with the substrate being placed on a rotary table provided in a chamber to form a film containing a reaction product of reaction gases on the surface of the substrate comprises: first reaction gas supply means for supplying a first reaction gas to the surface of the substrate; second reaction gas supply means for supplying a second reaction gas to the surface of the substrate; and heating means for heating the substrate, in which the first reaction gas supply means, the heating means and the second reaction gas supply means are arranged in a rotational direction of the rotary table.

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method.

  In manufacturing a semiconductor device, various film forming processes are performed on a semiconductor wafer, which is an object to be processed, by a method such as an atomic layer deposition (ALD) method. At this time, the film formed on the semiconductor wafer is required to be formed with high quality and at high speed.

  As a film forming apparatus that performs the ALD method, for example, Patent Document 1 describes a rotary table type substrate processing apparatus. This substrate processing apparatus has a turntable which is rotatably arranged in a chamber and on which a placement portion on which a plurality of wafers are placed is formed. Above the turntable, a first processing region to which a first reaction gas is supplied, a second processing region to which a second reaction gas that reacts with the first reaction gas is supplied, and A separation region that separates these processing regions is partitioned.

  In such a rotary table type substrate processing apparatus, since the substrate alternately passes through the first processing region and the second processing region by the rotation of the rotary table, the substrate can be processed at high speed.

JP 2010-56470 A

  However, in the substrate processing apparatus described in Patent Document 1, when one reaction gas is supplied, the film quality of the obtained film may deteriorate due to the other reaction gas remaining or the like.

  The object is to provide a substrate processing apparatus that can form a high-quality film with high productivity.

  In a state where the substrate is placed on a turntable provided in the chamber, at least two kinds of reaction gases that react with each other are sequentially supplied to the surface of the substrate, and a reaction product of the reaction gas is formed on the surface of the substrate. A substrate processing apparatus for forming a film including a first reactive gas supply means for supplying a first reactive gas to the surface of the substrate, and a second reactive gas to the surface of the substrate A second reactive gas supply means for heating and a heating means for heating the substrate, and the first reactive gas supply means, the heating means, and the second in the rotation direction of the rotary table. There is provided a substrate processing apparatus in which the reactive gas supply means is arranged.

  A substrate processing apparatus capable of forming a high-quality film with high productivity can be provided.

It is a schematic sectional drawing of the substrate processing apparatus which concerns on this embodiment. It is a schematic perspective view of the internal structure of the substrate processing apparatus which concerns on this embodiment. It is a schematic plan view of the internal structure of the substrate processing apparatus which concerns on this embodiment. It is sectional drawing of the 1st process area | region, the 2nd process area | region, and the isolation | separation area | region in the substrate processing apparatus which concerns on this embodiment. It is detailed sectional drawing of the isolation | separation area | region in the substrate processing apparatus which concerns on this embodiment. It is a schematic sectional drawing of the wafer holding mechanism which concerns on this embodiment. It is a schematic exploded view of the heating means which concerns on this embodiment. It is a flowchart of the process process of the board | substrate which concerns on this embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In addition, in this specification and drawing, about the component which has the substantially same function structure, the duplicate description is abbreviate | omitted by attaching | subjecting the same code | symbol.

(Configuration of substrate processing equipment)
A configuration of the substrate processing apparatus 100 according to the present embodiment will be described with reference to FIGS. The substrate processing apparatus 100 includes, for example, a so-called turntable 2 (described later), and is placed on the turntable 2 by sequentially supplying at least two kinds of reaction gases that react with each other to the surface of the substrate. An apparatus for forming a film on the surface of the substrate.

  FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus 100 according to this embodiment. 2 and 3 are respectively a schematic perspective view and a schematic plan view of the internal structure of the substrate processing apparatus 100 according to this embodiment. FIG. 1 is a cross-sectional view taken along the line II ′ of FIG. 3, and a region where a second ceiling surface 45 described later is provided and a heating means 8 described later are provided. Indicates the area. 2 and 3, the top plate 11 shown in FIG. 1 is omitted for convenience of explanation.

  As shown in FIGS. 1 to 3, the substrate processing apparatus 100 includes a flat chamber 1 having a substantially circular planar shape, and a rotation that is provided substantially horizontally in the chamber 1 and has a rotation center at the center of the chamber 1. Table 2 is provided. The chamber 1 is a container for accommodating a substrate to be processed (hereinafter referred to as a wafer W) and performing a film forming process on the substrate.

  As shown in FIG. 1, the chamber 1 is disposed so as to be airtightly attachable to and detachable from a bottomed cylindrical container body 12 and an upper surface of the container body 12 via a seal member 13 such as an O-ring The top plate 11 is provided. Further, the chamber 1 may include a first exhaust port 610 connected to the vacuum pump 640 and may be configured as a vacuum container that can be evacuated.

  The turntable 2 is a mounting table for mounting a substrate. The rotating table 2 is made of, for example, quartz and is fixed to a cylindrical core portion 21 at the center. The core portion 21 is fixed to the upper end of the rotating shaft 22 extending in the vertical direction. The rotating shaft 22 passes through the bottom 14 of the chamber 1, and a lower end thereof is attached to a motor 23 that rotates the rotating shaft 22 around a vertical axis.

  The rotating shaft 22 and the motor 23 are accommodated in a cylindrical case body 20 whose upper surface is open. A flange portion provided on the upper surface of the case body 20 is airtightly attached to the lower surface of the bottom portion 14 of the chamber 1, and the airtight state between the internal atmosphere and the external atmosphere of the case body 20 is maintained.

  As shown in FIGS. 2 and 3, on the surface of the turntable 2, a circular substrate for mounting a plurality (five in the illustrated example) of wafers W along the rotation direction (circumferential direction). A placement unit 24 is provided. In FIG. 3, for convenience, the wafer W is shown only on one substrate mounting portion 24.

  The substrate platform 24 has, for example, an inner diameter that is slightly 4 mm larger than the diameter of the wafer W, and a depth that is approximately equal to the thickness of the wafer W or deeper than the thickness of the wafer W.

  Therefore, when the wafer W is accommodated on the substrate platform 24, the surface of the wafer W and the surface of the turntable 2 (region where the wafer W is not placed) are the same height or the surface of the wafer W is It becomes lower than the surface of the turntable 2. Even if the depth of the substrate mounting portion 24 is deeper than the thickness of the wafer W, if it is too deep, the film formation is affected. Therefore, the depth is about three times the thickness of the wafer W. It is preferable.

  Above the turntable 2, for example, a first reaction gas nozzle 31, a second reaction gas nozzle 32, a first separation gas nozzle 41, and a second separation gas nozzle 42 made of quartz are disposed in the circumferential direction of the chamber 1 (see FIG. 3). (In the direction of the arrow) are spaced from each other. In the present embodiment, the first separation gas nozzle 41, the second reaction gas nozzle 32, and the second separation gas nozzle 42 are arranged in this order counterclockwise from the first reaction gas nozzle 31.

  These nozzles 31, 32, 41, 42 are fixed by fixing gas introduction ports 31 a, 32 a, 41 a, 42 a, which are the base ends of the nozzles 31, 32, 41, 42, to the outer peripheral wall of the container body 12. Introduced into the chamber 1 from the outer peripheral wall of the chamber 1. The nozzles 31, 32, 41, 42 are attached so as to extend horizontally with respect to the rotary table 2 along the radial direction of the container body 12.

  The first reactive gas nozzle 31 is connected to a first reactive gas supply source via a pipe and a flow rate controller. The second reactive gas nozzle 32 is connected to a second reactive gas supply source via a pipe and a flow rate controller. The first separation gas nozzle 41 and the second separation gas nozzle 42 are each connected to a separation gas supply source via a pipe and a flow rate control valve.

  The first reactive gas nozzle 31 corresponds to a first reactive gas supply means, and the lower region thereof is a first process for adsorbing the first reactive gas supplied from the first reactive gas nozzle 31 to the wafer W. It becomes area P1.

  The second reactive gas nozzle 32 corresponds to a second reactive gas supply means, and the lower region is formed from the first reactive gas adsorbed on the wafer W and the second reactive gas nozzle 32 in the first processing region P1. It becomes the 2nd processing field P2 where the 2nd reaction gas supplied reacts.

  The first separation gas nozzle 41 corresponds to a first separation gas supply means, and its lower region is a first separation for separating the atmosphere of the first processing region P1 and the second processing region P2. The separation region D is supplied with the separation gas from the gas nozzle 41.

  The second separation gas nozzle 42 corresponds to a second separation gas supply means, and a lower region thereof is a second separation gas for separating the atmosphere of the first processing region P1 and the second processing region P2. The separation region D is supplied with the separation gas from the gas nozzle 42.

  The separation region D is provided between the first processing region P1 and the second processing region P2 and between the second processing region and the first processing region in the rotation direction of the turntable 2. The first reaction gas and the second reaction gas are separated.

  Further, two convex portions 4 are provided in the chamber 1. The convex portion 4 is attached to the back surface of the top plate 11 so as to protrude toward the turntable 2 in order to form the separation region D together with the first separation gas nozzle 41 and the second separation gas nozzle 42. The convex portion 4 has a fan-shaped planar shape with the top portion cut in an arc shape, the inner arc is connected to the first projecting portion 5, and the outer arc is the inner peripheral surface of the container body 12 of the chamber 1. It is arranged along.

  FIG. 4 shows a cross-sectional view of the first processing region P1, the second processing region P2, and the separation region D in the substrate processing apparatus 100. FIG. 5 shows a detailed sectional view of the separation region D in the substrate processing apparatus 100.

  As shown in FIG. 4, the convex portion 4 is attached to the back surface of the top plate 11. Therefore, in the chamber 1, the first ceiling surface 44 that is a flat ceiling surface that is the lower surface of the convex portion 4, and the first ceiling surface 44 that is located on both sides in the circumferential direction of the first ceiling surface 44. There is a second ceiling surface 45 that is a higher ceiling surface.

  That is, the height of the ceiling surface (first ceiling surface 44) of the separation region D is equal to the height of the ceiling surface (second ceiling surface 45) of the first processing region P1 and the ceiling of the second processing region P2. It is lower than the height of the surface (second ceiling surface 45).

  The first ceiling surface 44 has a fan-shaped planar shape with the top portion cut into an arc shape.

  Further, a groove 43 is formed in the convex portion 4 so as to extend in the radial direction at the center in the circumferential direction, and the second separation gas nozzle 42 is accommodated in the groove 43. Similarly, a groove 43 is formed in the other convex portion 4, and the first separation gas nozzle 41 is accommodated in the groove 43.

  In addition, a plurality of separation gas discharge holes 41h and 42h that open toward the turntable 2 along the length direction of the first separation gas nozzle 41 and the second separation gas nozzle 42 are provided at intervals of, for example, 10 mm. It is arranged.

  In addition, a first reaction gas nozzle 31 and a second reaction gas nozzle 32 are respectively provided in a space below the second ceiling surface 45. The first reactive gas nozzle 31 and the second reactive gas nozzle 32 are provided in the vicinity of the wafer W so as to be separated from the second ceiling surface 45.

  A plurality of reaction gas discharge holes 33 opening toward the turntable 2 are arranged at intervals of, for example, 10 mm along the length direction of the first reaction gas nozzle 31 and the second reaction gas nozzle 32. .

  The first ceiling surface 44 forms a separation area D that is a narrow space with respect to the turntable 2. When the separation gas is supplied from the discharge hole 42h of the second separation gas nozzle 42, the separation gas flows through the separation region D toward the first processing region P1 and the second processing region P2.

  At this time, since the volume of the separation region D is smaller than the volumes of the first processing region P1 and the second processing region P2, the pressure of the separation region D is changed by the separation gas to the first processing region P1 and the second processing region. It can be made higher than the pressure of P2. That is, the separation region D having a high pressure is formed between the first processing region P1 and the second processing region P2.

  Further, the separation gas flowing out from the separation region D to the first processing region P1 and the second processing region P2 is the first reaction gas from the first processing region P1 and the second reaction gas from the second processing region P2. Acts as a counter flow to the reaction gas.

  Therefore, the first reaction gas from the first processing region P1 and the second reaction gas from the second processing region P2 are separated by the separation region D. Therefore, mixing and reaction of the first reaction gas and the second reaction gas in the chamber 1 is suppressed.

  The height h1 of the first ceiling surface 44 with respect to the upper surface of the turntable 2 is determined in consideration of the pressure in the chamber 1 during film formation, the rotation speed of the turntable 2, the supply amount of separation gas to be supplied, and the like. Is done. In addition, it is preferable to set the pressure in the separation region D to a height suitable for increasing the pressure in the first processing region P1 and the second processing region P2.

  Moreover, the 1st protrusion part 5 (FIG. 1) surrounding the outer periphery of the core part 21 which fixes the turntable 2 is provided in the back surface of the top plate 11. As shown in FIG. In the present embodiment, the first projecting portion 5 is continuous with the portion on the rotation center side of the convex portion 4, and the lower surface thereof is formed at the same height as the first ceiling surface 44.

  Further, as shown in FIG. 5, a bent portion that bends in an L shape so as to face the outer end surface of the turntable 2 at the peripheral portion (the portion on the outer edge side of the chamber 1) of the fan-shaped convex portion 4. 46 is formed. Like the convex portion 4, the bent portion 46 prevents the reaction gas from entering from both sides of the separation region D and suppresses the mixing of the first reaction gas and the second reaction gas. .

  The fan-shaped convex portion 4 is provided on the top plate 11 so that the top plate 11 can be removed from the container body 12, so that there is a slight gap between the outer peripheral surface of the bent portion 46 and the container body 12. There is. The gap between the inner peripheral surface of the bent portion 46 and the outer end surface of the turntable 2 and the gap between the outer peripheral surface of the bent portion 46 and the container body 12 are, for example, the height of the first ceiling surface 44 with respect to the upper surface of the turntable 2. Are set to the same dimensions.

  In the separation region D, the inner peripheral wall of the container body 12 is formed in a vertical plane close to the outer peripheral surface of the bent portion 46. On the other hand, in a part other than the separation region D, for example, it is recessed outward from the part facing the outer end surface of the turntable 2 to the bottom part 14 (see FIG. 1).

  Hereinafter, for convenience of explanation, a recessed portion having a substantially rectangular cross-sectional shape is referred to as an exhaust region E. Specifically, the exhaust region E communicating with the first processing region P1 is referred to as a first exhaust region E1, and the exhaust region E communicating with the second processing region P2 is referred to as a second exhaust region E2.

  A first exhaust port 610 and a second exhaust port 620 are formed at the bottoms of the first exhaust region E1 and the second exhaust region E2, respectively (see FIGS. 1 to 3). The first exhaust port 610 and the second exhaust port 620 are connected to, for example, a vacuum pump 640 that is a means for performing vacuum exhaust through an exhaust pipe 630 and a pressure controller 650 (FIG. 1).

  As shown in FIG. 5, a heater unit 7 is provided in the space between the turntable 2 and the bottom 14 of the chamber 1, and the wafer W on the turntable 2 is determined by the process recipe via the turntable 2. To a given temperature.

  On the lower side near the periphery of the turntable 2, the atmosphere from the upper space of the turntable 2 to the exhaust area E and the atmosphere in which the heater unit 7 is placed are partitioned to reach the lower area of the turntable 2. A cover member 71 is provided to suppress gas intrusion.

  The cover member 71 has a ring shape, and the outer edge of the turntable 2 and an inner member 71 a provided so as to face the outer peripheral side from the lower side with respect to the outer edge, and between the inner member 71 a and the inner wall surface of the chamber 1. And an outer member 71b.

  The outer member 71b is provided in the vicinity of the bent portion 46 below the bent portion 46 formed at the outer edge portion of the convex portion 4 in the separation region D. The inner member 71a surrounds the heater unit 7 over the entire circumference below the outer edge of the turntable 2 (and below the portion slightly outside the outer edge).

  The bottom portion 14 at the portion closer to the rotation center than the space where the heater unit 7 is disposed protrudes upward so as to approach the core portion 21 near the center portion of the lower surface of the turntable 2, and the second protrusion 12 a is formed. There is no. The space between the second projecting portion 12a and the core portion 21 is a narrow space, and the gap between the inner peripheral surface of the through hole of the rotating shaft 22 that penetrates the bottom portion 14 and the rotating shaft 22 is narrow, These narrow spaces communicate with the case body 20.

The case body 20 is provided with a purge gas supply pipe 72 for supplying N ₂ gas, which is a purge gas, into a narrow space for purging. Further, a plurality of purge gas supply pipes 73 for purging the arrangement space of the heater unit 7 at a predetermined angular interval in the circumferential direction below the heater unit 7 are provided at the bottom 14 of the chamber 1 (see FIG. 5). Shows one purge gas supply pipe 73).

  Further, in order to suppress the intrusion of gas into the region where the heater unit 7 is provided between the heater unit 7 and the turntable 2, a second protrusion is provided from the inner peripheral wall of the outer member 71b (the upper surface of the inner member 71a). A lid member 7a that covers the space between the upper end portion of the portion 12a and the circumferential direction is provided. The lid member 7a can be made of, for example, quartz.

  A separation gas supply pipe 51 is connected to the central portion of the top plate 11 of the chamber 1 so as to supply separation gas to a space 52 between the top plate 11 and the core portion 21. The separation gas supplied to the space 52 is discharged toward the periphery along the surface of the turntable 2 on the substrate mounting portion 24 side through a narrow gap 50 between the first protrusion 5 and the turntable 2. The space 52 can be maintained at a higher pressure than the first processing region P1 and the second processing region P2 by the separation gas.

  Therefore, the first reaction gas supplied to the first processing region P1 and the second reaction gas supplied to the second processing region P2 are mixed through the central region C by the gap 50. It is suppressed. That is, the gap 50 (or the center region C) can function in the same manner as the separation region D.

  Further, as shown in FIG. 3, a transfer port 15 for transferring the wafer W between the external transfer arm 10 and the rotary table 2 is formed on the side wall of the chamber 1. The transport port 15 is opened and closed by a gate valve (not shown). In addition, the substrate mounting unit 24 in the rotary table 2 transfers the wafer W to and from the transfer arm 10 at a position facing the transfer port 15.

  Hereinafter, the position facing the conveyance port 15 in the rotary table 2 is referred to as a carry-in / carry-out region P2m.

  FIG. 6 is a schematic cross-sectional view of the wafer holding mechanism 25 that transfers the wafer W by the transfer arm 10.

  As shown in FIG. 6, a wafer holding mechanism 25 for supporting the back surface of the wafer W and raising and lowering the wafer W is provided on the bottom surface side of the substrate platform 24. The wafer holding mechanism 25 includes, for example, three elevating pins 25a and an elevating mechanism 25b that can receive and elevate the elevating pins 25a. In addition, a through hole 26 through which the elevating pin 25 a passes is formed on the bottom surface of the substrate platform 24.

  Further, as shown in FIG. 3, the chamber 1 includes a heating means 8 for heating the wafer W between the first reaction gas nozzle 31 and the second reaction gas nozzle 32 in the rotation direction of the rotary table. Has been placed.

  The heating means 8 also has an upper side of the wafer W so as to heat the surface of the wafer W opposite to the mounting surface on the turntable 2 (the surface to which the first reaction gas is supplied). Placed in. Hereinafter, in this specification, the mounting surface of the wafer W on the turntable 2 is referred to as the “back surface” of the wafer W, and the surface opposite to the mounting surface of the wafer W is referred to as the “front surface” of the wafer W.

  Note that the position where the heating unit 8 is provided is not limited to this, and may be disposed between the first reaction gas nozzle 31 and the second reaction gas nozzle 32 in the rotation direction of the turntable 2. Furthermore, the first reaction gas nozzle 31, the first separation gas nozzle 41, the heating means 8, the second reaction gas nozzle 32, and the second separation gas nozzle 42 are arranged in this order in the rotation direction of the turntable 2. preferable.

  In FIG. 7, the schematic exploded view of the heating means 8 which concerns on this embodiment is shown.

  As shown in FIG. 7, the heating unit 8 includes a plurality of heating lamps 81 arranged in a substantially fan shape on the upper surface of the transmission member 86, for example, so that the control unit 101 does not generate an in-plane temperature difference on the wafer W. Controlled.

  The transmitting member 86 is disposed on the step portion 11a of the top plate 11, and a member made of a material (for example, quartz) that transmits light (for example, infrared light) is fitted into the window portion 86a of the transmitting member 86. Has been. Further, a seal member (for example, an O-ring) is disposed on the step portion 11a.

  Note that the number and arrangement of the heating lamps 81 of the heating means 8 in the present embodiment are illustrated as an example, but the number and arrangement of the heating lamps 81 are not limited to this, and the heating lamp 81 can change the wafer. It is only necessary that the surface of W can be heated.

  Further, the type of the heating lamp 81 is not particularly limited, and for example, a light that irradiates light in the absorption wavelength region of the wafer W, for example, infrared light can be used.

  More specifically, for example, a halogen lamp that emits infrared light with a wavelength of 0.5 μm or more and 3 μm or less can be used, but it is preferable to use a lamp that can selectively heat only the wafer W. Thereby, the apparatus member around the wafer W is not heated.

  The substrate processing apparatus 100 engages the flange portion 83 and the step portion 11a with each other by inserting the transmission member 86 into the step portion 11a of the top plate 11. In addition, the substrate processing apparatus 100 hermetically connects the step portion 11a (top plate 11) and the transmissive member 86 with a seal member disposed on the step portion 11a. Furthermore, the substrate processing apparatus 100 secures the airtightness of the inside of the chamber 1 by fixing the transmissive member 86 to the top plate 11 with a bolt or the like (not shown).

  Further, as shown in FIG. 1, the substrate processing apparatus 100 according to the present embodiment is provided with a control unit 101 including a computer for controlling the operation of the entire apparatus.

  The control unit 101 instructs each component of the substrate processing apparatus 100 to operate, and controls the operation of each component. The control unit 101 executes a program stored in the storage unit 102 and cooperates with hardware to form a film on the surfaces of a plurality of substrates. Note that the control unit 101 can be configured by a calculation processing device including a known CPU (Central Processing Unit) and a memory (ROM, RAM, etc.).

  Specifically, the control unit 101 stores a program for causing the substrate processing apparatus 100 to perform a substrate processing method described later in a built-in memory. This program has, for example, a group of steps.

  The substrate processing apparatus 100 reads the program stored in the medium 103 into the storage unit 102 and then installs the program in the control unit 101 (memory built therein). As the medium 103, for example, a hard disk, a compact disk, a magneto-optical disk, a memory card, a flexible disk, or the like can be used.

  The control unit 101 can control the temperature of the wafer W by controlling the operations of the heater unit 7 and the heating unit 8.

  Further, the control unit 101 can control the operation of supplying the first reactive gas to the upper surface of the turntable 2 by controlling the operation of the first reactive gas nozzle 31.

  In addition, the control unit 101 can control the operation of supplying the second reactive gas to the upper surface of the turntable 2 by controlling the operation of the second reactive gas nozzle 32.

  Further, the control unit 101 can control the operation of supplying the separation gas to the upper surface of the turntable 2 by controlling the operations of the first separation gas nozzle 41 and the second separation gas nozzle 42.

(Substrate processing method)
Next, a substrate processing method using the substrate processing apparatus 100 according to this embodiment described above will be described with reference to FIG.

  FIG. 8 shows a flowchart of the substrate processing steps according to this embodiment.

  In the substrate processing method according to the present embodiment, at least two kinds of reaction gases that react with each other are sequentially supplied to the surface of the substrate in a state where the substrate is placed on a turntable provided in the chamber. A substrate processing method for forming a film containing a reaction product of a reaction gas on the substrate, wherein the first reaction gas is supplied to the surface of the substrate to adsorb the first reaction gas to the surface of the substrate. It includes a processing step S1, a heating step S2 for heating the wafer W on which the first reactive gas is adsorbed, and a second processing step S3 for supplying a second reactive gas to the surface of the heated wafer W.

  Each step will be described in detail.

[First processing step S1]
First, with respect to the wafer W placed on the substrate platform 24 of the substrate processing apparatus 100 described with reference to FIG. 1 and the like, the first reactive gas is supplied from the first reactive gas nozzle 31 in the first processing region P1. Supply. As a result, the first reactive gas is adsorbed on the surface of the wafer W (S1).

[Heating step S2]
Next, in the heating region A, the surface of the wafer W on which the first reaction gas is adsorbed is heated to a predetermined temperature by the heating means 8 (S2).

  The effect in the heating step S2 according to the present embodiment will be described together with the film growth mechanism using the ALD method.

  Generally, in the film formation by the ALD method, the difference in bond strength between chemical adsorption and physical adsorption is used. More specifically, in the ALD method, chemical adsorption is used in the reaction gas deposition (adsorption) process to eliminate physical adsorption.

  Since the bond by chemical adsorption is formed by a covalent bond between atoms on the surface of the solid phase and a molecule reaching from the gas layer, the bond is strong.

  On the other hand, bonds by physisorption only involve van der Waals forces, so they are much weaker than bonds by chemisorption, and are easily cleaved by thermal energy when the local temperature exceeds the condensation temperature of the molecule. . In addition, bonding by physical adsorption tends to cause impurities (for example, Cl, H, etc.) contained in the reaction gas to remain in the film, thereby deteriorating the film quality.

  The deposition sequence using the ALD method includes at least one deposition cycle composed of four consecutive steps, specifically, a reaction gas A adsorption, a reaction gas A purge, a reaction gas B adsorption, and a reaction gas B purge. Including above. This deposition cycle is repeated until a film of the desired thickness is formed.

In the reaction gas purge step after each reaction gas is adsorbed, these are reacted for the purpose of preventing physical adsorption of gaseous reaction by-products and residual reactant molecules generated in the adsorption step on the wafer. An inert gas such as N ₂ is introduced into the reaction space for removal from the space. At this time, generally, the reaction space is evacuated by a vacuum pump.

  Since the film formed by the conventional ALD method is formed only by bonding by chemical adsorption, it is of high quality, that is, dense, free of pinholes, and uniform in thickness. However, in the ALD method described above, it is difficult to form a film at a high speed because the reaction space needs to be exhausted in the deposition cycle.

  On the other hand, in the rotary table type substrate processing method, since the wafer W alternately passes through the first processing region P1 and the second processing region P2 by the rotation of the rotary table 2, the substrate is processed at high speed. Can do. However, in the rotary table type substrate processing apparatus, it is difficult to sufficiently remove reaction by-products and residual reactant molecules when one reaction gas is supplied. May get worse.

  Therefore, in the present embodiment, after the first processing step S1 for adsorbing the first reactive gas to the wafer W placed on the turntable 2 in the chamber 1, the second processing step S3 The heating step S2 is performed before the first reaction gas and the second reaction gas are reacted.

  In the heating step S2, the controller 101 controls the temperature of the heating means 8 and heats the surface of the wafer W so that the physical adsorption gas can be desorbed. This is because the bond by physical adsorption is much weaker than the bond by chemical adsorption. That is, since the temperature of the surface of the wafer W exceeds the condensation temperature of the molecules due to the heating by the heating means 8, the bond by physical adsorption can be easily broken by the thermal energy.

  In addition, the heating temperature in heating process S2 can be suitably selected by those skilled in the art according to the kind of reaction gas to be used, the rotation speed of the rotary table, and the like.

[Second processing step S3]
In the second processing step S3, the second reaction gas nozzle 32 performs the second processing on the wafer W from which unnecessary reaction by-products and residual reactant molecules have been removed by the heating step S2 in the second processing region P2. The reaction gas is supplied. Thereby, the first reaction gas adsorbed on the surface of the wafer W reacts with the second reaction gas, and a predetermined film is formed (S3).

  As described above, in the substrate processing method according to the present embodiment, a film containing a reaction product resulting from the reaction between the first reaction gas and the second reaction gas is formed by the steps S1 to S3. Further, the rotary table 2 is continuously rotated by a predetermined number of times, and the first processing step S1, the heating step S2, and the second processing step S3 are sequentially repeated, whereby a film containing a reaction product having a desired film thickness. Is formed.

  It is preferable that the structure further includes a separation step S4 for supplying a separation gas to the surface of the wafer W on which the first reaction gas is adsorbed before heating the wafer W on which the first reaction gas is adsorbed. Furthermore, it is preferable that the structure further includes a separation step S4 for supplying a separation gas to the surface of the wafer W on which the second reaction gas is adsorbed.

  In addition, since the rotary table type substrate processing apparatus 100 supplies the first reaction gas and the second reaction gas into the chamber 1 at the same time, the time required for substrate processing can be shortened.

  That is, it is possible to provide a substrate processing apparatus 100 capable of forming a high-quality film with high productivity and a substrate processing method using the substrate processing apparatus 100.

  Hereinafter, specific examples will be described in Examples.

(Example)
An example to which the substrate processing method according to this embodiment described above is applied will be described with reference to FIGS. 3, 5, 6 and 8. In this embodiment, 3DMAS [trisdimethylaminosilane] gas, which is a silicon-containing gas, is used as the first reaction gas, and O ₃ [ozone] gas, which is an oxygen-containing gas, is used as the second reaction gas. N ₂ [nitrogen] gas was used as the separation gas.

  As shown in FIG. 3, a gate valve (not shown) is opened, and the wafer W is transferred into the substrate mounting portion 24 of the turntable 2 by the transfer arm 10 through the transfer port 15. As shown in FIG. 6, this delivery is performed by lifting pins from the bottom side of the chamber 1 through the through holes 26 on the bottom surface of the substrate platform 24 when the substrate platform 24 stops at a position facing the transfer port 15. This is done by raising and lowering 25a.

  Such delivery of the wafer W is performed by intermittently rotating the turntable 2, and the wafer W is placed on each of the five substrate placement portions 24 of the turntable 2.

Subsequently, the gate valve is closed, and the chamber 1 is evacuated to the lowest ultimate vacuum by the vacuum pump 640. Then, the _{N 2} gas from the first separation gas nozzle 41 and the second separation gas nozzle 42 ejected at a predetermined flow rate, the _{N 2} gas from the separation gas supplying pipe 51 and the purge gas supply pipe 72, 73 (see FIG. 5) Discharge at a predetermined flow rate. Accordingly, the pressure controller 650 adjusts the inside of the chamber 1 to a preset processing pressure.

  Next, the wafer W is heated to a temperature of, for example, 450 ° C. by the heater unit 7 while rotating the turntable 2 counterclockwise, for example, at a maximum rotation speed of 240 rpm.

Thereafter, a valve (not shown) is opened for the chamber 1, 3DMAS gas is supplied from the first reaction gas nozzle 31, and O ₃ gas is supplied from the second reaction gas nozzle 32. That is, 3DMAS gas and O ₃ gas are simultaneously supplied into the chamber 1, but these gases are separated by the separation region D and hardly mixed with each other in the chamber 1.

When the 3DMAS gas and the O ₃ gas are supplied simultaneously, when the turntable 2 is rotated counterclockwise and the wafer W passes through the first processing region P1, the 3DMAS gas is adsorbed on the surface of the wafer W ( S1). In the first processing step S1, 3DMAS gas is adsorbed on the surface of the wafer W due to chemical adsorption and physical adsorption.

Next, when the wafer W that has passed through the first processing region P1 passes through the separation region D, the physical adsorption gas is desorbed by the N ₂ gas (S4). However, in the separation step S4, since the wafer W passes through the separation region D in a short time, the physical adsorption gas may not be sufficiently removed.

  Next, when the wafer W that has passed through the separation region D passes through the heating region A, the wafer W is rapidly heated by the heating means 8, whereby the physical adsorption gas is desorbed (S2). In the heating step S2, as described above, it is possible to remove the physical adsorption gas that could not be removed in the separation step S4.

Next, when the wafer W heated in the heating region A passes through the second processing region P2, the 3DMAS gas adsorbed on the surface of the wafer W is oxidized by the O ₃ gas, and a silicon oxide film is formed on the surface of the wafer W. (S3).

  Thereafter, the rotation table 2 is continuously rotated a predetermined number of times until a silicon oxide film having a desired film thickness is formed, whereby the first processing region P1, the separation region D, the heating region A, and the second processing region. P2 is sequentially passed a plurality of times.

Finally, the film formation is completed by stopping the supply of 3DMAS gas and O ₃ gas.

  As described above, the substrate processing apparatus 100 and the substrate processing method using the substrate processing apparatus 100 have been described by using the embodiments and examples. However, the present invention is not limited to the above-described embodiments and examples, and various modifications may be made within the scope of the present invention. Variations and improvements are possible.

  For example, in this embodiment, the rotation direction of the turntable 2 is counterclockwise, but the present invention is not limited to this. The rotation direction of the turntable 2 may be clockwise or counterclockwise, and the first processing region P1, the heating region A, and the second processing region P2 in the present embodiment may be processed in this order. good.

Although using N ₂ gas as the separation gas may be used an inert gas such as Ar gas.

Moreover, although 3DMAS gas was used as 1st reaction gas, it is not limited to this, For example, silicon content, such as BTBAS [bistar butylaminosilane], DCS [dichlorosilane], HCD [hexachlorodisilane], monoaminosilane, etc. Gas, TiCl ₄ [titanium tetrachloride], Ti (MPD) (THD) [titanium methylpentanediotobistetramethylheptanedionate], TMA [trimethylaluminum], TEMAZ [tetrakisethylmethylaminozirconium], TEMHF [tetrakis] A metal-containing gas such as ethylmethylaminohafnium], Sr (THD) ₂ [strontium bistetramethylheptanedionate] may be used.

Moreover, although O ₃ gas was used as the second reaction gas, the present invention is not limited to this. For example, an oxygen-containing gas such as NOx [nitrogen oxide] or H ₂ O, N ₂ , NH ₃ [ammonia], Nitrogen-containing gases such as N ₂ H ₄ [hydrazine] and CH ₆ N ₂ [methyl hydrazine] may be used.

  For example, when a silicon-containing gas is used as the first reaction gas and a nitrogen-containing gas is used as the second reaction gas, a nitride film such as SiN is formed. For example, when a titanium-containing gas is used as the first reaction gas and a nitrogen-containing gas is used as the second reaction gas, a nitride film such as TiN is formed.

Further, as the second reaction gas, for example, O ₂ gas may be used for plasma, and the surface of the wafer W may be subjected to plasma processing. When plasma processing is performed on the surface of the wafer W using O ₂ gas, it is preferable to provide a plasma generation source in the chamber 1.

As a plasma generation source, electrodes on two rods that are parallel to each other and parallel to the rotary table 2 are arranged in the chamber 1, and O ₂ gas is supplied to the space between the electrodes. Electric power may be supplied to generate O ₂ plasma. Further, inductively coupled plasma (ICP) may be used instead of such capacitively coupled plasma (CCP).

DESCRIPTION OF SYMBOLS 1 Chamber 2 Turntable 8 Heating means 24 Substrate mounting part 31 1st reaction gas nozzle 32 2nd reaction gas nozzle 41 1st separation gas nozzle 42 2nd separation gas nozzle 81 Heating lamp 100 Substrate processing apparatus P1 1st processing area P2 Second processing region A Heating region D Separation region W Wafer S1 First processing step S2 Heating step S3 Second processing step S4 Separation step

Claims (9)

In a state where the substrate is placed on a turntable provided in the chamber, at least two kinds of reaction gases that react with each other are sequentially supplied to the surface of the substrate, and a reaction product of the reaction gas is formed on the surface of the substrate. A substrate processing apparatus for forming a film containing
First reaction gas supply means for supplying a first reaction gas to the surface of the substrate;
A second reactive gas supply means for supplying a second reactive gas to the surface of the substrate;
Heating means for heating the substrate;
Have
The substrate processing apparatus, wherein the first reaction gas supply means, the heating means, and the second reaction gas supply means are arranged in a rotation direction of the turntable. Provided in the rotation direction between the first reaction gas supply means and the heating means, and between the second reaction gas supply means and the first reaction gas supply means, A separation gas supply means for supplying a separation gas for separating the second reaction gas and the second reaction gas;
The substrate processing apparatus according to claim 1. The separation region to which the separation gas is supplied, the first processing region to which the first reaction gas is supplied, and the second processing region to which the second reaction gas is supplied are each of the rotary table. Having a predetermined height between the surface on which the substrate is placed and the ceiling surface;
The height of the ceiling surface of the separation region is lower than the height of the ceiling surface of the first processing region and the height of the ceiling surface of the second processing region.
The substrate processing apparatus according to claim 2. The heating means is provided so as to heat a surface of the substrate to which the first reaction gas is supplied.
The substrate processing apparatus as described in any one of Claims 1 thru | or 3. The heating means is composed of a plurality of heating lamps for heating the substrate.
The substrate processing apparatus as described in any one of Claims 1 thru | or 4. The first reaction gas includes a silicon-containing gas or a metal-containing gas,
The second reaction gas includes an oxygen-containing gas or a nitrogen-containing gas.
The substrate processing apparatus as described in any one of Claims 1 thru | or 5. In a state where the substrate is placed on a turntable provided in the chamber, at least two kinds of reaction gases that react with each other are sequentially supplied to the surface of the substrate, and a reaction product of the reaction gas is formed on the surface of the substrate. A substrate processing method for forming a film containing
A first treatment step of adsorbing the first reactive gas on the surface of the substrate by supplying a first reactive gas to the surface of the substrate;
A heating step of heating the substrate on which the first reaction gas is adsorbed;
A second treatment step of reacting the first reaction gas adsorbed on the substrate with the second reaction gas by supplying a second reaction gas to the heated surface of the substrate;
A substrate processing method. A separation step of supplying a separation gas to the surface of the substrate on which the first reaction gas is adsorbed;
A separation step of supplying a separation gas to the surface of the substrate on which the second reaction gas is adsorbed.
The substrate processing method according to claim 7. The first reaction gas includes a silicon-containing gas or a metal-containing gas,
The second reaction gas includes an oxygen-containing gas or a nitrogen-containing gas.
The substrate processing method according to claim 7 or 8.

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