JP2015070015A - Substrate processing apparatus and method for processing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technology which appropriately process both of a surface peripheral part and a rear surface, while suppressing a decrease in throughput.SOLUTION: A substrate processing apparatus 1 comprises: a substrate holding part (for example, a spin chuck 2) for rotating a substrate 9 around a vertical rotary shaft passing through a center of its surface, while holding the substrate 9 in a horizontal attitude; a discharging head 51 for a peripheral part, for discharging process liquid to a surface peripheral part of the substrate 9 held by the substrate holding part; a rear surface processing part 8 for discharging the process liquid to a rear surface of the substrate 9 held by the substrate holding part; a controller 130 for controlling the substrate holding part, the discharging head 51 for the peripheral part, and the rear surface processing part 8. The controller 130 makes the discharging head 51 for the peripheral part discharge the process liquid toward the surface peripheral part of the substrate 9 held and rotated by the substrate holding part, then makes the rear surface processing part 8 discharge the process liquid toward the rear surface of the substrate 9.

Description

  The present invention includes a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a glass substrate for a photomask, a substrate for a solar cell, etc. The present invention relates to a technique for performing processing on a surface peripheral portion of a substrate (simply called “substrate”).

  In a substrate, a device pattern (circuit pattern) is rarely formed as far as the end surface, and the device pattern is often formed in a surface region inside a certain width from the end surface of the substrate.

  However, in the film formation process for forming the device pattern, the film is formed on the back surface of the substrate and the outer peripheral portion of the region on the surface of the substrate where the device pattern is formed (hereinafter simply referred to as “device region”). Sometimes formed. The film formed on the back surface and the front surface peripheral part is not only unnecessary, but may cause various troubles. For example, a film formed on the back surface or the peripheral edge of the surface may be peeled off during the processing step, resulting in a decrease in yield, trouble in the substrate processing apparatus, or the like.

  Therefore, there is a case in which a film formed on the back surface and front surface peripheral portion of the substrate is removed by etching. For example, in Patent Document 7, a processing liquid is supplied to the back surface of a substrate that is rotated in a horizontal posture, and the processing liquid is circulated to the front surface peripheral portion of the substrate, whereby etching is performed on the back surface and the front surface peripheral portion. An apparatus is described.

JP 2008-300454 A JP 2009-070946 A JP 2006-210580 A JP 2006-229057 A JP 2003-264168 A JP 2001-060576 A JP 2004-006672 A

  In the aspect of Patent Document 7, since the back surface and the front surface peripheral portion of the substrate can be processed at a time, there is an advantage that a high throughput can be realized, but it is very important to control the amount of the processing liquid that wraps around the front peripheral portion. It is difficult to properly treat the peripheral edge of the surface.

  This invention is made | formed in view of the said subject, and it aims at providing the technique which can process both a front surface peripheral part and a back surface appropriately, suppressing the fall of a through-put.

  A first aspect is a substrate processing apparatus, which holds a substrate in a horizontal posture, and rotates the substrate around a vertical rotation axis passing through the center in the plane, and the substrate holding A peripheral portion discharge head for discharging a processing liquid to the front surface peripheral portion of the substrate held by a portion, a back surface processing portion for discharging a processing liquid to the back surface of the substrate held by the substrate holding portion, and A control unit that controls the substrate holding unit, the peripheral edge discharge head, and the rear surface processing unit, and the control unit is held by the peripheral edge discharge head and rotated by the substrate holding unit. After the processing liquid is discharged toward the peripheral edge of the surface of the substrate, the processing liquid is discharged toward the back surface of the substrate at the back surface processing unit.

  A second aspect is the substrate processing apparatus according to the first aspect, wherein the control unit stops the discharge of the processing liquid from the peripheral portion discharge head, and is from the back surface processing unit. Before starting the discharge of the processing liquid, the rotation speed of the substrate is reduced in the substrate holding portion.

  A 3rd aspect is a substrate processing apparatus concerning the 1st or 2nd aspect, Comprising: At least one part of the surface peripheral part of the said board | substrate, Comprising: The surface of the said board | substrate hold | maintained at the said board | substrate holding part A guard member disposed in a non-contact state with the peripheral portion and a cylindrical member having an open upper end, and the substrate and the guard member held by the substrate holding portion are collectively And a peripheral edge discharge head disposed at a position opposite to the cup with at least a portion of the guard member interposed therebetween, toward the surface peripheral edge portion. Then, the processing liquid is discharged.

  A fourth aspect is a substrate processing method, in which a) a step of holding the substrate in a horizontal posture by the substrate holding portion, and b) the substrate held by the substrate holding portion passes through the center in the plane. Starting a rotation around a vertical rotation axis; c) discharging a processing liquid toward the peripheral edge of the surface of the substrate held and rotated by the substrate holding portion; and d) the c) step. And a step of discharging a processing liquid toward the back surface of the substrate held and rotated by the substrate holding portion.

  A fifth aspect is a substrate processing method according to the fourth aspect, wherein e) after the step c) and before the step d) of the substrate held by the substrate holder. Reducing the rotation speed.

  A sixth aspect is a substrate processing method according to the fourth or fifth aspect, which is after the step a) and before the step b), and f) is held by the substrate holding portion. A step of disposing a guard member having a shape along at least a part of the surface peripheral edge of the substrate at a position close to the surface peripheral edge in a non-contact state; and g) a cylindrical cup having an open upper end. A step of collectively surrounding the substrate and the guard member held by the holding portion; and h) the peripheral edge at a position opposite to the cup across at least a part of the guard member. Arranging a partial discharge head.

  According to the first and fourth aspects, since the substrate is held in the substrate holding portion, the processing on the front surface peripheral portion of the substrate and the processing on the back surface of the substrate are continuously performed. Both the front surface peripheral portion and the back surface of the substrate can be processed while suppressing a decrease in throughput. On the other hand, according to the first and fourth aspects, since the processing liquid is discharged toward the front surface peripheral portion of the substrate and the back surface of the substrate, the processing liquid is held on each of the front surface peripheral portion and the back surface. The amount of treatment liquid to be controlled can be controlled stably. Further, according to the first and fourth aspects, since the processing liquid is supplied toward the back surface after the processing liquid is supplied to the front surface peripheral portion, the processing liquid supplied to the front peripheral portion is scattered from the substrate. Even if it adheres to the back surface, the attached processing solution can be poured off by the processing solution supplied to the back surface of the substrate. Therefore, both the front surface peripheral edge and the back surface can be appropriately processed. As described above, according to the first and fourth aspects, it is possible to appropriately treat both the front surface peripheral portion and the back surface while suppressing a decrease in throughput.

  According to the second and fifth aspects, the rotation speed of the substrate is lowered before the processing liquid is discharged toward the back surface. That is, the substrate is rotated at a relatively high speed while the processing liquid is supplied to the front surface peripheral portion, and the substrate is rotated at a relatively low speed while the processing liquid is supplied to the back surface. It will be. According to this configuration, the processing liquid supplied to the front surface peripheral portion can be prevented from entering the device region, and the processing liquid supplied to the back surface can wrap around the substrate surface and enter the device region. Is also suppressed.

  According to the third and sixth aspects, at least a part of the space between the peripheral portion ejection head and the cup is filled with the guard member. According to this configuration, the space in which the mist of the processing liquid scattered from the substrate can float is reduced by the space filled with the guard member, and the mist of the processing liquid is re-applied to the substrate by the amount of the space. The possibility of adhesion is reduced. That is, it is possible to suppress a part of the processing liquid scattered from the substrate from reattaching to the substrate.

It is a schematic plan view which shows a substrate processing system typically. It is sectional drawing which shows the peripheral part vicinity of the board | substrate used as a process target. It is a schematic perspective view of a substrate processing apparatus. It is a schematic perspective view of a substrate processing apparatus. It is a schematic diagram for demonstrating the structure of a substrate processing apparatus. It is a perspective view of the discharge head for peripheral parts. It is a sectional side view which shows typically the structure of the front-end | tip vicinity of a nozzle. It is a figure which shows typically an example of the target discharge position of a group of nozzle with which the discharge head for peripheral parts is provided. It is the figure which looked at the discharge head for peripheral parts from the downstream of the rotation direction of a board | substrate. It is the figure which looked at the discharge head for peripheral parts from the downstream of the rotation direction of a board | substrate. It is a perspective view of a guard member. It is the top view which looked at the state by which the cup, the guard member, and the peripheral part discharge head were arrange | positioned in each process position from the upper direction. It is the sectional side view which looked at FIG. 12 from the arrow K. It is a figure which shows the flow of the whole operation | movement performed with a substrate processing apparatus. It is a figure which shows the flow of pre-processing. It is a figure for demonstrating pre-processing. It is a figure which shows the flow of a surface periphery process. It is a figure for demonstrating a surface periphery process. It is a figure which shows flows, such as a back surface process. It is a figure for demonstrating a back surface process.

  Hereinafter, embodiments will be described with reference to the drawings. The following embodiment is an example embodying the present invention, and is not an example of limiting the technical scope of the present invention. In each of the drawings referred to below, the size and number of each part may be exaggerated or simplified for easy understanding.

<1. Substrate Processing System 100>
<1-1. Configuration>
The configuration of the substrate processing system 100 will be described with reference to FIG. FIG. 1 is a schematic plan view schematically showing the substrate processing system 100.

  The substrate processing system 100 is a system that sequentially processes a plurality of substrates 9 one by one. In the following description, it is assumed that the substrate 9 to be processed in the substrate processing system 100 is, for example, a circular semiconductor wafer.

  The substrate processing system 100 controls a plurality of cells (processing blocks) arranged in parallel (specifically, the indexer cell 110 and the processing cell 120) and each operation mechanism included in the plurality of cells 110 and 120. Unit 130.

<Indexer cell 110>
The indexer cell 110 is a cell for transferring the unprocessed substrate 9 received from the outside of the apparatus to the processing cell 120 and carrying out the processed substrate 9 received from the processing cell 120 to the outside of the apparatus. The indexer cell 110 includes a carrier stage 111 on which a plurality of carriers C are placed, and a substrate transfer device (transfer robot) IR that loads and unloads the substrate 9 with respect to each carrier C.

  On the carrier stage 111, the carrier C that stores the unprocessed substrate 9 is carried from the outside of the apparatus by OHT (Overhead Hoist Transfer) or the like and placed thereon. Unprocessed substrates 9 are taken out from the carrier C one by one and processed in the apparatus, and the processed substrates 9 that have been processed in the apparatus are stored in the carrier C again. The carrier C containing the processed substrate 9 is carried out of the apparatus by OHT or the like. Thus, the carrier stage 111 functions as a substrate integration unit that integrates the unprocessed substrate 9 and the processed substrate 9. The carrier C may be a FOUP (Front Opening Unified Pod) that accommodates the substrate 9 in a sealed space, or a SMIF (Standard Mechanical Inter Face) pod or the accommodated substrate 9 is exposed to the outside air. It may be OC (Open Cassette).

  The transfer robot IR supports the substrate 9 from below, thereby holding the substrate 9 in a horizontal posture (a posture in which the main surface of the substrate 9 is horizontal), a hand driving mechanism 113 for driving the hand 112, Is provided. The transfer robot IR takes out the unprocessed substrate 9 from the carrier C placed on the carrier stage 111 and transfers the taken-out substrate 9 to the transport robot CR (described later) at the substrate delivery position P. Further, the transfer robot IR receives the processed substrate 9 from the transfer robot CR at the substrate delivery position P, and stores the received substrate 9 in the carrier C placed on the carrier stage 111.

<Processing cell 120>
The processing cell 120 is a cell for processing the substrate 9. The processing cell 120 includes a plurality of substrate processing apparatuses 1 and a substrate transfer apparatus (transfer robot CR) that loads and unloads the substrates 9 with respect to the plurality of substrate processing apparatuses 1. Here, a plurality of (for example, three) substrate processing apparatuses 1 are stacked in the vertical direction to constitute one substrate processing apparatus group 10. A plurality (four in the illustrated example) of substrate processing apparatus groups 10 are installed in a cluster shape (tuft shape) so as to surround the transfer robot CR.

  Each of the plurality of substrate processing apparatuses 1 includes a housing 11 that forms a processing space therein. The housing 11 is formed with a carry-in / out port 12 for inserting the hand 121 of the transfer robot CR into the case, and the substrate processing apparatus 1 is provided in the space where the transfer robot CR is arranged. 12 are arranged so as to face each other. A specific configuration of the substrate processing apparatus 1 will be described later.

  The transport robot CR includes a hand 121 that holds the substrate 9 in a horizontal posture by supporting the substrate 9 from below, and a hand drive mechanism 122 that drives the hand 121. However, as described above, the transfer robot CR (specifically, the base of the transfer robot CR) is arranged in the center of the space surrounded by the plurality of substrate processing apparatus groups 10. The transfer robot CR takes out the processed substrate 9 from the designated substrate processing apparatus 1 and transfers the taken-out substrate 9 to the transfer robot IR at the substrate transfer position P. Further, the transfer robot CR receives an unprocessed substrate 9 from the transfer robot IR at the substrate delivery position P, and transfers the received substrate 9 to the designated substrate processing apparatus 1.

<Control unit 130>
The control unit 130 controls each of the transfer robot IR, the transfer robot CR, and the group of substrate processing apparatuses 1. The configuration of the control unit 130 as hardware can be the same as that of a general computer. That is, the control unit 130 stores, for example, a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, control software, data, and the like. It has a magnetic disk to keep. In the control unit 130, various functional units that control each unit of the substrate processing system 100 are realized by the CPU as the main control unit performing arithmetic processing according to the procedure described in the program. However, some or all of the functional units realized in the control unit 130 may be realized in hardware by a dedicated logic circuit or the like.

<1-2. Operation>
The overall operation of the substrate processing system 100 will be described with continued reference to FIG. In the substrate processing system 100, the control unit 130 controls each unit included in the substrate processing system 100 in accordance with a recipe describing the transport procedure, processing conditions, and the like of the substrate 9, thereby executing a series of operations described below. Is done.

  When the carrier C containing the unprocessed substrate 9 is placed on the carrier stage 111, the transfer robot IR takes out the unprocessed substrate 9 from the carrier C. Then, the transfer robot IR moves the hand 112 holding the unprocessed substrate 9 to the substrate delivery position P, and delivers the unprocessed substrate 9 to the transport robot CR at the substrate delivery position P. The transport robot CR that has received the unprocessed substrate 9 on the hand 121 carries the unprocessed substrate 9 into the substrate processing apparatus 1 specified in the recipe. The transfer of the substrate 9 between the transfer robot IR and the transfer robot CR may be performed directly between the hands 112 and 121, or via a placement unit provided at the substrate transfer position P. It may be done.

  In the substrate processing apparatus 1 in which the substrate 9 is carried in, a predetermined process is performed on the substrate 9. The flow of processing executed by the substrate processing apparatus 1 will be described later.

  When the processing on the substrate 9 is completed in the substrate processing apparatus 1, the transfer robot CR takes out the processed substrate 9 from the substrate processing apparatus 1. Then, the transfer robot CR moves the hand 121 holding the processed substrate 9 to the substrate delivery position P, and delivers the processed substrate 9 to the transfer robot IR at the substrate delivery position P. The transfer robot IR that has received the processed substrate 9 on the hand 112 stores the processed substrate 9 in the carrier C.

  In the substrate processing system 100, the transfer robot CR and the transfer robot IR repeatedly perform the transfer operation described above according to the recipe, and each substrate processing apparatus 1 executes a process on the substrate 9 according to the recipe. . Thus, the processing for the substrate 9 is performed one after another.

<2. Substrate 9>
Next, the substrate 9 to be processed in the substrate processing apparatus 1 will be described with reference to FIG. FIG. 2 is a cross-sectional view showing the vicinity of the peripheral edge of the substrate 9.

A substrate 9 to be processed by the substrate processing apparatus 1 includes, for example, a central layer 901 made of silicon (Si), a lower layer film 902 formed outside the central layer 901, and an outer side of the lower layer film 902. A three-layer structure of an upper layer film 903 formed on the substrate. The lower layer film 902 is, for example, a thermal oxide film (Th—SiO ₂ ), or an insulating film (for example, an Hf (hafnium) film, an oxide Hf film, or the like). The upper layer film 903 is, for example, a barrier metal film (for example, a TiN film, a TaN film, etc.) or a metal film (for example, an Al film, a W film, a NiSi film, a Cu film, etc.). However, the substrate 9 to be processed in the substrate processing apparatus 1 may have, for example, a two-layer structure of the central layer 901 and the lower layer film 902 or a structure of four or more layers. May be.

  Hereinafter, the surface of the main surface of the substrate 9 on which the device pattern is formed is referred to as “surface 91”. Further, a surface opposite to the front surface 91 is referred to as a “back surface 92”. Further, a region on the surface 91 where a device pattern is formed is referred to as a “device region 90”. Further, a peripheral region on the surface 91 outside the device region 90 (specifically, for example, an annular shape having a minute width d (for example, d = 0.5 mm to 3.0 mm (millimeters)) from the end surface 93 of the substrate 9. Are referred to as “surface peripheral edge portion 911”. Further, an annular region having a minute width d from the end surface 93 on the back surface 92 is referred to as a “back surface peripheral portion 921”.

  The substrate processing apparatus 1 treats the substrate 9 having a multilayer structure as described above as a processing target, and removes thin films formed on the front surface peripheral portion 911 and the back surface 92 (for example, the front surface peripheral portion 911 and the back surface 92 are removed). Process).

<3. Configuration of Substrate Processing Apparatus 1>
The configuration of the substrate processing apparatus 1 will be described with reference to FIGS. FIG. 3 is a schematic perspective view of the substrate processing apparatus 1. The semicircular arc members 61 and 62, the cup 31, and the peripheral portion discharge head 51 constituting the guard member 60 are arranged at the respective retracted positions. The state is shown. FIG. 4 is also a schematic perspective view of the substrate processing apparatus 1. Here, the guard member 60, the cup 31, and the peripheral portion discharge head 51 are shown in the respective processing positions. Yes. FIG. 5 is a schematic diagram for explaining the configuration of the substrate processing apparatus 1.

  In the following description, “processing liquid” includes “chemical liquid” used for chemical liquid processing and “rinsing liquid” used for rinsing processing for rinsing the chemical liquid.

  The substrate processing apparatus 1 includes a spin chuck 2, a splash prevention unit 3, a surface protection unit 4, a peripheral processing unit 5, a liquid splash suppression unit 6, a heat processing unit 7, and a back surface processing unit 8. Each of these units 2 to 8 is electrically connected to the control unit 130 and operates according to an instruction from the control unit 130.

<Spin chuck 2>
The spin chuck 2 is a substrate holding unit that holds the substrate 9 in a substantially horizontal posture with the surface 91 facing upward, and has a vertical rotation axis that passes through the center of the surface 91. Rotate around.

  The spin chuck 2 includes a spin base 21 that is a disk-like member that is slightly larger than the substrate 9. A rotation shaft portion 22 is connected to the central portion of the lower surface of the spin base 21. The rotating shaft portion 22 is arranged in such a posture that its axis is along the vertical direction. Further, the rotary shaft portion 22 is connected to a rotation drive portion (for example, a motor) 23 that rotates the shaft around the axis. The rotating shaft portion 22 and the rotation driving portion 23 are accommodated in a cylindrical casing 24. A plurality of (for example, six) holding members 25 are provided in the vicinity of the peripheral edge of the upper surface of the spin base 21 with appropriate intervals. The holding member 25 is in contact with the end surface 93 of the substrate 9 to position the substrate 9 in the horizontal direction, and at a position slightly higher than the upper surface of the spin base 21 (that is, at a predetermined interval from the upper surface of the spin base 21). The substrate 9 is held in a substantially horizontal posture.

  In this configuration, when the rotation drive unit 23 rotates the rotation shaft unit 22 with the holding member 25 holding the substrate 9 above the spin base 21, the spin base 21 is rotated around the axis along the vertical direction. Thereby, the substrate 9 held on the spin base 21 is rotated around a vertical rotation axis passing through the center in the plane.

  However, the holding member 25 and the rotation drive unit 23 are electrically connected to the control unit 130 and operate under the control of the control unit 130. That is, the timing of holding the substrate 9 on the spin base 21, the timing of releasing the held substrate 9, and the rotation mode of the spin base 21 (specifically, the rotation start timing, the rotation end timing, the rotation speed (that is, , Rotation speed), etc. are controlled by the control unit 130.

<Spattering prevention part 3>
The scattering prevention unit 3 receives a processing liquid or the like scattered from the substrate 9 held and rotated by the spin base 21.

  The scattering prevention unit 3 includes a cup 31. The cup 31 is a cylindrical member having an open upper end and is provided so as to surround the spin chuck 2. In this embodiment, the cup 31 includes, for example, three members: an inner member 311, an intermediate member 312, and an outer member 313.

  The inner member 311 is a cylindrical member having an open upper end, and has an annular bottom 311a, a cylindrical inner wall 311b extending upward from the inner edge of the bottom 311a, and an upper edge from the outer edge of the bottom 311a. A cylindrical outer wall portion 311c extending to the inner wall portion 311 and a cylindrical guide wall 311d erected between the inner wall portion 311b and the outer wall portion 311c. The guide wall 311d extends upward from the bottom 311a, and the vicinity of the upper end is curved inwardly upward. At least the vicinity of the tip of the inner wall portion 311b is accommodated in the inner space of the bowl-shaped member 241 provided in the casing 24 of the spin chuck 2.

  A drainage groove (not shown) that communicates with the space between the inner wall 311b and the guide wall 311d is formed in the bottom 311a. The drainage groove is connected to a factory drainage line. The drainage groove is connected to an exhaust fluid mechanism that forcibly exhausts the groove and places the space between the inner wall portion 311b and the guide wall 311d in a negative pressure state. The space between the inner wall portion 311b and the guide wall 311d is a space for collecting and draining the processing liquid used for processing the substrate 9, and the processing liquid collected in this space is discharged from the drain groove. Drained.

  The bottom 311a is formed with a first recovery groove (not shown) that communicates with the space between the guide wall 311d and the outer wall 311c. The first collection groove is connected to the first collection tank. The first recovery groove is connected to an exhaust fluid mechanism that forcibly evacuates the groove and places the space between the guide wall 311d and the outer wall portion 311c in a negative pressure state. The space between the guide wall 311d and the outer wall portion 311c is a space for collecting and recovering the processing liquid used for processing the substrate 9, and the processing liquid collected in this space is the first recovery groove. Through the first recovery tank.

  The middle member 312 is a cylindrical member having an open upper end, and is provided outside the guide wall 311 d of the inner member 311. The upper part of the middle member 312 is curved inward and upward, and the upper edge of the middle member 312 is bent along the upper edge of the guide wall 311d.

  An inner peripheral wall portion 312a extending downward along the inner peripheral surface and an outer peripheral wall portion 312b extending downward along the outer peripheral surface are formed in the lower portion of the middle member 312. The inner peripheral wall portion 312a is accommodated between the guide wall 311d and the outer wall portion 311c of the inner member 311 in a state where the inner member 311 and the middle member 312 are close to each other (the state shown in FIG. 5). Further, the lower end of the outer peripheral wall 312b is attached to the inner edge of the annular bottom 312c. A cylindrical outer wall portion 312d extending upward is erected from the outer edge portion of the bottom portion 312c.

  The bottom 312c is formed with a second recovery groove (not shown) that communicates with the space between the outer peripheral wall 312b and the outer wall 312d. The second collection groove is connected to the second collection tank. The second recovery groove is connected to an exhaust fluid mechanism that forcibly exhausts the inside of the groove and places the space between the outer peripheral wall portion 312b and the outer wall portion 312d in a negative pressure state. The space between the outer peripheral wall portion 312b and the outer wall portion 312d is a space for collecting and collecting the processing liquid used for processing the substrate 9, and the processing liquid collected in this space is the second recovery liquid. It is recovered in the second recovery tank via the groove.

  The outer member 313 is a cylindrical member having an open upper end, and is provided outside the middle member 312. The upper part of the outer member 313 is curved inward and upward, and its upper edge 301 is bent slightly inward and downward from the upper edge of the middle member 312 and the upper edge of the inner member 311. Yes. In a state where the inner member 311, the middle member 312, and the outer member 313 are close to each other (the state shown in FIG. 5), the upper edge of the middle member 312 and the upper edge of the inner member 311 are bent of the outer member 313. Covered by the done part.

  An inner peripheral wall portion 313a is formed at the lower portion of the outer member 313 so as to extend downward along the inner peripheral surface. The inner peripheral wall portion 313a is accommodated between the outer peripheral wall portion 312b and the outer wall portion 312d of the intermediate member 312 in a state where the intermediate member 312 and the outer member 313 are close to each other (the state shown in FIG. 5).

  The cup 31 is provided with a cup drive mechanism 32 that moves the cup 31 up and down. The cup drive mechanism 32 is configured by, for example, a stepping motor. In this embodiment, the cup drive mechanism 32 raises and lowers the three members 311, 312, and 313 included in the cup 31 independently.

  Each of the inner member 311, the middle member 312, and the outer member 313 receives the drive of the cup drive mechanism 32 and is moved between an upper position and a lower position. Here, the upper positions of the members 311, 312, and 313 are positions at which the upper edge portions of the members 311, 312, and 313 are arranged on the sides of the substrate 9 held on the spin base 21. On the other hand, the lower positions of the members 311, 312, and 313 are positions at which the upper edge portions of the members 311, 312, and 313 are disposed below the upper surface of the spin base 21. However, the cup drive mechanism 32 is electrically connected to the control unit 130 and operates under the control of the control unit 130. That is, the position of the cup 31 (specifically, the position of each of the inner member 311, the middle member 312, and the outer member 313) is controlled by the control unit 130.

  Pointing to the state in which the external member 313 is disposed at the lower position (that is, the state in which all of the inner member 311, the middle member 312, and the outer member 313 are disposed at the lower position), "It is in a retreat position." While the substrate 9 is not held on the spin base 21, the cup 31 is disposed at the retracted position. That is, while the substrate 9 is not held on the spin base 21, the cup 31 has an upper end edge (that is, an upper end edge of the outer member 313) 301 located below the upper surface of the spin base 21. Placed in position.

  On the other hand, the state where the outer member 313 is disposed at the upper position is referred to as “the cup 31 is at the processing position”. The upper end edge of the cup 31 at the processing position (that is, the upper end edge 301 of the outer member 313) is disposed on the side of the substrate 9 held on the spin base 21. However, the state of “the cup 31 is in the processing position” includes the following three states. The first state is a state in which the inner member 311, the middle member 312, and the outer member 313 are all arranged at the upper position (the state shown in FIG. 5). In this state, the processing liquid splashed from the substrate 9 held by the spin chuck 2 is collected in the space between the inner wall portion 311b of the inner member 311 and the guide wall 311d and drained from the drainage groove. . The second state is a state in which the inner member 311 is disposed at the lower position and the middle member 312 and the outer member 313 are disposed at the upper position. In this state, the processing liquid splashed from the substrate 9 held by the spin chuck 2 is collected in the space between the guide wall 311d and the outer wall 311c of the inner member 311 and collected in the first collection tank. The The third state is a state in which the inner member 311 and the middle member 312 are disposed at the lower position, and the outer member 313 is disposed at the upper position. In this state, the processing liquid splashed from the substrate 9 held by the spin chuck 2 is collected in the space between the outer peripheral wall portion 312b and the outer wall portion 312d of the intermediate member 312 and recovered in the second recovery tank. Is done.

<Surface protector 4>
The surface protection unit 4 supplies gas (cover gas) to the vicinity of the center of the surface 91 of the substrate 9 held on the spin base 21, and the device region 90 is supplied to the surface peripheral portion 911 and the like. Protect from the atmosphere of the processing solution.

  The surface protection unit 4 includes a cover gas nozzle 41 that discharges gas toward the vicinity of the center of the surface 91 of the substrate 9 held on the spin base 21. The cover gas nozzle 41 is attached to the tip of an arm 42 that extends horizontally. Further, the base end portion of the arm 42 is connected to the nozzle base 43. The nozzle base 43 is arranged in such a posture that its axis is along the vertical direction, and the base end portion of the arm 42 is connected to the upper end of the nozzle base 43.

  The nozzle base 43 is provided with a drive unit 44 that drives the cover gas nozzle 41. The drive unit 44 includes, for example, a rotation drive unit (for example, a servo motor) that rotates the nozzle base 43 around its axis, and a lift drive unit (for example, a stepping motor) that expands and contracts the nozzle base 43 along its axis. And comprising. When the drive unit 44 rotates the nozzle base 43, the cover gas nozzle 41 moves along an arc orbit in the horizontal plane, and when the drive unit 44 expands and contracts the nozzle base 43, the cover gas nozzle 41 is moved to the substrate 9. And move in the direction of approaching and separating.

  The cover gas nozzle 41 is driven between the processing position and the retracted position by being driven by the driving unit 44. Here, the processing position of the cover gas nozzle 41 is a position above the substrate 9 held on the spin base 21 and a position close to the surface 91 in a non-contact state while facing the vicinity of the center of the surface 91. is there. On the other hand, the retracted position of the cover gas nozzle 41 is a position that does not interfere with the transport path of the substrate 9 and is, for example, a position outside the upper end edge 301 of the cup 31 when viewed from above. The drive unit 44 is electrically connected to the control unit 130 and operates under the control of the control unit 130. That is, the position of the cover gas nozzle 41 is controlled by the control unit 130.

The cover gas nozzle 41 is connected to a cover gas supply unit 45 which is a piping system for supplying gas (here, for example, nitrogen (N ₂ ) gas). Specifically, for example, the cover gas supply unit 45 is connected to the cover gas nozzle 41 through a pipe 452 in which an on-off valve 453 is inserted, for example, a nitrogen gas supply source 451 that is a supply source for supplying nitrogen gas. It has a configuration. In this configuration, when the on-off valve 453 is opened, nitrogen gas supplied from the nitrogen gas supply source 451 is discharged from the cover gas nozzle 41. The gas supplied to the cover gas nozzle 41 may be a gas other than nitrogen gas (for example, various inert gases other than nitrogen gas, dry air, etc.).

  When the gas is supplied from the cover gas supply unit 45 to the cover gas nozzle 41 in a state where the cover gas nozzle 41 is disposed at the processing position, the surface 91 of the substrate 9 held on the spin base 21 from the cover gas nozzle 41. A gas (cover gas) is discharged toward the vicinity of the center. However, the on-off valve 453 of the cover gas supply unit 45 is electrically connected to the control unit 130 and is opened and closed under the control of the control unit 130. That is, the discharge mode (specifically, discharge start timing, discharge end timing, discharge flow rate, etc.) of the gas from the cover gas nozzle 41 is controlled by the control unit 130.

<Edge processing unit 5>
The peripheral processing unit 5 performs processing on the surface peripheral portion 911 of the substrate 9 held on the spin base 21.

<I. Overall configuration>
The peripheral edge processing section 5 includes a peripheral edge discharge head 51 that discharges fluid (here, processing liquid and gas) toward the surface peripheral edge 911 of the substrate 9 held on the spin base 21. The peripheral discharge head 51 is attached to the tip of an arm 52 that extends horizontally. Further, the base end portion of the arm 52 is connected to the nozzle base 53. The nozzle base 53 is arranged in such a posture that its axis is along the vertical direction, and the base end portion of the arm 52 is connected to the upper end of the nozzle base 53.

  The nozzle base 53 is provided with a drive unit 54 that drives the peripheral discharge head 51. The drive unit 54 includes, for example, a rotation drive unit (for example, a servo motor) that rotates the nozzle base 53 around its axis, and a lift drive unit (for example, a stepping motor) that expands and contracts the nozzle base 53 along its axis. And comprising. When the drive unit 54 rotates the nozzle base 53, the peripheral discharge head 51 moves along the circular arc trajectory in the horizontal plane, and when the drive unit 54 expands and contracts the nozzle base 53, the peripheral discharge The head 51 moves in a direction to approach and separate from the substrate 9.

  The peripheral edge discharge head 51 is driven between the processing position and the retracted position by the drive of the drive unit 54. Here, the processing position of the peripheral portion ejection head 51 is above the substrate 9 held on the spin base 21 and is close to the surface peripheral portion 911 in a non-contact state while facing the surface peripheral portion 911. Position (position shown in FIG. 4). However, in a state where the peripheral discharge head 51 is disposed at the processing position, at least a part of the peripheral discharge head 51 is accommodated in a notch 605 formed in an inner peripheral wall 601 of the guard member 60 described later. It becomes a state. On the other hand, the retracted position of the peripheral-portion ejection head 51 is a position that does not interfere with the transport path of the substrate 9 and is, for example, a position outside the upper end edge 301 of the cup 31 as viewed from above (see FIG. Position shown). The drive unit 54 is electrically connected to the control unit 130 and operates under the control of the control unit 130. That is, the position of the peripheral portion ejection head 51 is controlled by the control unit 130.

  A fluid supply unit 55 that is a piping system that supplies fluid (specifically, processing liquid and gas) is connected to the peripheral-portion discharge head 51. Specifically, the fluid supply unit 55 includes, for example, an acid chemical solution supply source 551a, an alkaline chemical solution supply source 551b, a rinse solution supply source 551c, a nitrogen gas supply source 551d, a plurality of pipes 552a, 552b, 552c, and 552d, A plurality of on-off valves 553a, 553b, 553c, and 553d are combined.

The acidic chemical solution supply source 551a is a supply source that supplies an acidic chemical solution. Here, the acid chemical solution supply source 551a includes, for example, diluted hydrofluoric acid (dilute hydrofluoric acid) (hereinafter referred to as “DHF”), hydrochloric acid hydrogen peroxide (that is, hydrochloric acid (HCl) and peroxide). Hydrogen (H ₂ O ₂ ) and pure water (DIW: deionized water) is a chemical solution mixed at a predetermined ratio and can be selectively supplied. . The acid-based chemical solution supply source 551a is connected to the peripheral portion discharge head 51 (more specifically, “first chemical solution nozzle 50a” to be described later) via a pipe 552a in which an on-off valve 553a is inserted. . Accordingly, when the on-off valve 553a is opened, the acidic chemical solution (DHF or SC-2) supplied from the acid chemical solution supply source 551a is discharged from the first chemical solution nozzle 50a. However, the acid chemical solution supply source 551a is not necessarily limited to selectively supplying DHF and SC-2. For example, the acid chemical solution supply source 551a includes DHF, SC-2, BDHF (buffered hydrofluoric acid), HF (hydrofluoric acid), hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, oxalic acid, and a mixed solution thereof. Or at least one of them may be supplied.

The alkaline chemical solution supply source 551b is a supply source that supplies an alkaline chemical solution. Here, the alkaline chemical solution supply source 551b includes, for example, ammonia hydrogen peroxide (that is, ammonium hydroxide (NH ₄ OH), hydrogen peroxide (H ₂ O ₂ ), and pure water at a predetermined ratio. It is a mixed chemical solution and can be supplied hereinafter as “SC-1”. The alkaline chemical solution supply source 551b is connected to the peripheral discharge head 51 (more specifically, “second chemical solution nozzle 50b” to be described later) via a pipe 552b in which an on-off valve 553b is inserted. . Therefore, when the on-off valve 553b is opened, the alkaline chemical liquid (SC-1) supplied from the alkaline chemical liquid supply source 551b is discharged from the second chemical liquid nozzle 50b. In addition, it is also preferable that SC-1 supplied from the alkaline chemical supply source 551b is temperature-controlled at 60 ° C. to 80 ° C., for example. However, the alkaline chemical solution supply source 551b may supply a chemical solution other than SC-1 (for example, an aqueous solution of ammonia).

The rinse liquid supply source 551c is a supply source that supplies a rinse liquid. Here, the rinse liquid supply source 551c supplies, for example, pure water (carbonated water) in which carbon dioxide (CO ₂ ) is melted as a rinse liquid. The rinse liquid supply source 551c is connected to the peripheral portion discharge head 51 (more specifically, a “rinse liquid nozzle 50c” to be described later) via a pipe 552c in which an on-off valve 553c is inserted. Accordingly, when the on-off valve 553c is opened, the rinse liquid supplied from the rinse liquid supply source 551c is discharged from the rinse liquid nozzle 50c. Note that pure water, warm water, ozone water, magnetic water, reduced water (hydrogen water), various organic solvents (ion water, IPA (isopropyl alcohol), functional water, etc.) may be used as the rinse liquid.

The nitrogen gas supply source 551d is a supply source that supplies gas (here, nitrogen (N ₂ ) gas, for example). The nitrogen gas supply source 551d is connected to the peripheral discharge head 51 (more specifically, “gas nozzle 50d” described later) via a pipe 552d in which an on-off valve 553d is inserted. Therefore, when the on-off valve 553d is opened, nitrogen gas supplied from the nitrogen gas supply source 551d is discharged from the gas nozzle 50d. However, the nitrogen gas supply source 551d may supply a gas other than nitrogen gas (for example, various inert gases other than nitrogen gas, dry air, etc.).

  In a state where the peripheral edge discharge head 51 is disposed at the processing position, a treatment liquid (an acidic chemical (DHF or SC-2), an alkaline chemical (SC) is supplied from the fluid supply unit 55 to the peripheral discharge head 51. -1) or rinsing liquid) is supplied from the peripheral discharge head 51 toward the surface peripheral portion 911 of the substrate 9 held on the spin base 21. In addition, when gas is supplied from the fluid supply unit 55 to the peripheral discharge head 51 in a state where the peripheral discharge head 51 is disposed at the processing position, the peripheral discharge head 51 is moved onto the spin base 21. Gas is discharged toward the surface peripheral edge portion 911 of the substrate 9 held by the substrate 9. In addition, each of the on-off valves 553a, 553b, 553c, and 553d included in the fluid supply unit 55 is electrically connected to the control unit 130 and is opened and closed under the control of the control unit 130. That is, the control unit 130 controls the fluid discharge mode (specifically, the type of fluid to be discharged, the discharge start timing, the discharge end timing, the discharge flow rate, etc.) from the peripheral portion discharge head 51.

<Ii. Peripheral Discharge Head 51>
Here, the peripheral portion discharge head 51 will be described more specifically with reference to FIG. FIG. 6 is a perspective view of the peripheral-portion ejection head 51. For convenience of explanation, the guard member 60 and the cup 31 are not shown in FIG.

  The peripheral portion discharge head 51 includes a plurality of (here, four) nozzles 50a to 50d and a support portion 500 that integrally supports the plurality of nozzles 50a to 50d.

  In the group of nozzles 50a to 50d provided in the peripheral portion discharge head 51, one or more (here, three) nozzles (hereinafter also referred to as “processing liquid nozzles”) that discharge the processing liquid toward the surface peripheral portion 911. 50a, 50b, and 50c, and a nozzle (hereinafter, also referred to as “gas nozzle”) 50d that discharges gas (here, nitrogen gas) toward the surface peripheral edge portion 911 are included. In particular, the peripheral portion discharge head 51 includes two nozzles (hereinafter, also referred to as “chemical solution nozzles”) 50 a and 50 b that discharge chemical liquids, and nozzles that discharge rinsing liquid (processing liquid nozzles 50 a, 50 b, and 50 c). (Hereinafter also referred to as “rinsing liquid nozzle”) 50c. In particular, the peripheral-portion discharge head 51 includes, as chemical nozzles 50a and 50b, nozzles for discharging acidic chemical liquids (hereinafter also referred to as “first chemical liquid nozzles”) 50a and nozzles for discharging alkaline chemical liquids (hereinafter “first nozzles”). 50b).

  The support portion 500 that integrally supports the group of nozzles 50 a to 50 d is fixed to the arm 52 described above. The support portion 500 is a member that is curved in an arc shape along the surface peripheral edge portion 911 when viewed from above, and the group of nozzles 50a to 50d are arranged along the extending direction of the support portion 500 that is curved in an arc shape. Yes. Therefore, the group of nozzles 50 a to 50 d are arranged along the surface peripheral edge 911 of the substrate 9 in a state where the peripheral discharge head 51 is disposed at the processing position. At this time, the gas nozzle 50d, the first chemical liquid nozzle 50a, the rinse liquid nozzle 50c, and the second chemical liquid nozzle 50b are arranged in this order from the upstream side along the rotation direction AR9 of the substrate 9.

  In other words, in the peripheral portion discharge head 51, the gas nozzle 50d is disposed on the upstream side in the rotation direction AR9 of the substrate 9 relative to the processing liquid nozzles 50a, 50b, and 50c. Therefore, each position in the surface peripheral edge portion 911 of the substrate 9 to be rotated first passes below the gas nozzle 50d and then passes below the processing liquid nozzles 50a, 50b, and 50c. According to this configuration, before a new processing liquid is supplied from each of the processing liquid nozzles 50a, 50b, and 50c to each position in the surface peripheral edge portion 911 of the substrate 9 to be rotated, the gas is discharged from the gas nozzle 50d to that position. Can be supplied (ie, gas can be blown).

  Depending on the surface state of the substrate 9 and the like, the substrate 9 is supplied to each position in the surface peripheral portion 911 that has reached the lower side of the peripheral portion discharge head 51 from the processing liquid nozzles 50a, 50b, and 50c one round before. There is a case in which an old processing liquid that has not been shaken off during the rotation is attached. Even in such a case, a new processing liquid can be supplied from the processing liquid nozzles 50a, 50b, and 50c after the old processing liquid is removed by the gas discharged from the gas nozzle 50d. According to this configuration, a situation in which the processing liquid newly supplied to each position in the surface peripheral edge portion 911 collides with the old processing liquid and jumps is unlikely to occur. Thereby, the processing liquid is prevented from entering the device region 90. Moreover, according to this structure, a fresh process liquid can always be made to act on the board | substrate 9, and, thereby, process efficiency can be improved. In addition, if a new processing solution is further supplied to the place where the old chemical solution remains, the amount of the processing solution held there temporarily increases, and the old chemical solution is removed with gas. If a new processing liquid is supplied later, a situation in which a large amount of processing liquid is temporarily held at each position in the surface peripheral edge portion 911 is unlikely to occur. As a result, it is possible to stabilize the dimensions of the region where the treatment liquid is applied. For example, the size of the region where the chemical for etching is applied, that is, the width that is etched away from the end face 93 toward the inside of the substrate 9 (hereinafter, simply referred to as “etching width”) is stabilized, and the control accuracy of the etching width is controlled. Can be increased.

  From another viewpoint, in the peripheral-portion discharge head 51, the processing liquid nozzles 50a, 50b, and 50c are disposed downstream of the gas nozzle 50d in the rotation direction AR9 of the substrate 9. Accordingly, each position within the peripheral edge portion 911 of the surface of the substrate 9 that is rotated passes below the processing liquid nozzles 50a, 50b, and 50c, and then reaches the lower portion of the gas nozzle 50d after the substrate 9 is rotated substantially once. It will be. According to this configuration, at least a part of the processing liquid supplied from the processing liquid nozzles 50a, 50b, and 50c to each position on the surface peripheral edge 911 is placed on the surface peripheral edge 911 while the substrate 9 is rotated substantially once. Since it continues to stay, the processing liquid can sufficiently act on each position in the surface peripheral edge portion 911.

  In the peripheral portion discharge head 51, a rinse liquid nozzle 50c for discharging a rinse liquid is disposed between the first chemical liquid nozzle 50a for discharging acidic chemical liquid and the second chemical liquid nozzle 50b for discharging alkaline chemical liquid. Is done. According to this configuration, for example, it is possible to suppress the occurrence of a situation in which the atmosphere generated when the chemical liquid is discharged from one chemical liquid nozzle reacts with the chemical liquid remaining in the other chemical liquid nozzle. Specifically, for example, the atmosphere generated when the first chemical liquid nozzle 50a discharges the acidic chemical liquid reacts with the alkaline chemical liquid remaining in the second chemical liquid nozzle 50b, or the second chemical liquid nozzle Generation | occurrence | production of the situation where the atmosphere generated when 50b discharges the alkaline chemical | medical solution reacts with the acidic chemical | medical solution which remains in the 1st chemical | medical solution nozzle 50a can be suppressed.

<Iii. Nozzle 50>
Next, the configuration of each of the group of nozzles 50a to 50d included in the peripheral discharge head 51 will be described with reference to FIG. Each of the group of nozzles 50a to 50d has substantially the same configuration. Hereinafter, when the nozzles 50a to 50d are not distinguished from each other, they are also simply referred to as “nozzles 50”. FIG. 7 is a side sectional view schematically showing a configuration near the tip of the nozzle 50.

  The nozzle 50 includes a nozzle main body portion 501 that has a long rod-like outer shape with a thin lower end. The nozzle body 501 is supported by the support 500 so that its axial direction is along the vertical direction and its lower surface (hereinafter also referred to as “ejection surface”) 502 is in a horizontal posture. Therefore, in a state where the peripheral portion discharge head 51 is disposed at the processing position, the discharge surface 502 is in a non-contact state with the surface peripheral portion 911 in a posture parallel to the surface 91 of the substrate 9 held on the spin base 21. Close by. However, in this state, the separation distance m between the ejection surface 502 and the surface peripheral edge portion 911 is sufficiently small (for example, about m = 1 mm).

  Inside the nozzle body 501, an introduction channel 503 and a discharge channel 504 communicating with the lower end thereof are formed. One of the pipes 552a, 552b, 552c, and 552d described above is connected to the upper end of the introduction flow path portion 503. In addition, the lower end of the discharge flow path portion 504 communicates with the discharge port 505 opened in the discharge surface 502. The discharge port 505 is, for example, a circular through hole, and the diameter thereof is smaller than the minute width d from the end surface 93 of the substrate 9 in FIG. 2, for example, 0.6 mm. Therefore, the fluid supplied from the piping is first held in the introduction flow path portion 503, flows into the discharge flow path portion 504, and is discharged from the discharge port 505.

  The discharge flow path part 504 has a bent shape in the middle. Specifically, the discharge flow path section 504 includes a vertical flow path portion 5041 and an inclined flow path portion 5042 that is continuous therewith. The vertical flow path portion 5041 extends in parallel with the axial direction of the nozzle body 501 and communicates with the inclined flow path portion 5042 at the lower end. The inclined channel portion 5042 extends obliquely downward from the inner side of the substrate 9 (center side of the substrate 9) toward the outer side (end surface 93 side) as it goes downward, and communicates with the discharge port 505 at the lower end.

  In this nozzle 50, fluid is discharged from the discharge port 505 through the inclined flow path portion 5042 extending obliquely, so that the fluid discharged from the nozzle 50 toward the surface peripheral portion 911 of the substrate 9 is It can flow toward the outside of the substrate 9 at the surface peripheral edge portion 911. Therefore, for example, when the processing liquid is discharged from the nozzle 50 toward the surface peripheral edge portion 911, the processing liquid can be prevented from flowing into the device region 90, and the size of the region where the processing liquid acts (for example, It is possible to stabilize the size of the region where the chemical for etching acts, that is, the etching width, and to improve the control accuracy. Further, for example, when gas is discharged from the nozzle 50 toward the surface peripheral edge portion 911, an air flow toward the outside of the substrate 9 can be formed in the surface peripheral edge portion 911. By this air flow, the processing liquid on the surface peripheral edge portion 911 and the mist of the processing liquid can be blown off to the outside of the substrate 9.

  In particular, the nozzle 50 is not supported by the support portion 500 in an inclined posture, but the inclined flow passage portion that is a part of the discharge flow passage portion 504 formed inside the nozzle main body portion 501. 5042 is inclined. Assuming that the nozzle body itself is in an inclined posture while forming a flow channel extending straight along the axial direction inside the nozzle body, the discharge surface is inclined with respect to the horizontal plane. . In this case, a liquid pool is likely to occur near the lowermost end of the discharge surface, and this liquid pool may drop (drop) on the substrate 9. Such a dripping of the processing liquid occurs on the substrate 9 at a position inside the position where the processing liquid is originally to be supplied (center side of the substrate 9), and is thus discharged from the gas nozzle 50d. It is difficult to remove even gas. On the other hand, according to the configuration in which a part of the discharge flow path portion 504 formed inside the nozzle main body portion 501 is inclined as in this embodiment, the discharge surface 502 can be placed in a horizontal posture. Such a drop in the treatment liquid is unlikely to occur.

  In order to improve the control accuracy of the width of the region where the treatment liquid acts (for example, the etching width where the chemical for etching acts), the angle (tilt angle) formed by the extending direction of the inclined channel portion 5042 with the horizontal plane. θ is preferably 45 degrees or more, and more preferably 60 degrees or more.

<Iv. Target discharge position>
Now, the arrival position at which the fluid is discharged from each of the group of nozzles 50a to 50d provided in the peripheral edge discharge head 51 and reaches the substrate 9 is referred to as a “target discharge position” of the nozzle. Hereinafter, the target discharge positions Qa to Qd of the group of nozzles 50a to 50d will be described with reference to FIGS. FIG. 8 is a diagram schematically illustrating an example of target discharge positions of the nozzles 50a to 50d. 9 and 10 are views of the peripheral-portion ejection head 51 as viewed from the downstream side in the rotation direction AR9 of the substrate 9. FIG. However, FIG. 9 shows a state in which the chemical liquid and the gas are discharged from the peripheral portion discharge head 51, and FIG. 10 shows that the rinse liquid and the gas are discharged from the peripheral portion discharge head 51. The state is shown.

  The target discharge positions Qa to Qd of each of the group of nozzles 50 a to 50 d provided in the peripheral edge discharge head 51 are shifted from each other in the radial direction of the substrate 9. That is, the target discharge position Qd of the gas nozzle 50d is set to the radial inner side (center side) of the substrate 9 relative to the target discharge positions Qa, Qb, Qc of the processing liquid nozzles 50a, 50b, 50c. Furthermore, the target discharge position Qc of the rinsing liquid nozzle 50c is set to the inside in the radial direction of the substrate 9 relative to the target discharge positions Qa and Qb of the chemical liquid nozzles 50a and 50b. Furthermore, the target discharge position Qa of the first chemical liquid nozzle 50a and the target discharge position Qb of the second chemical liquid nozzle 50b are the same position in the radial direction. However, “the same position in the radial direction” refers to a position where the distance from the end surface 93 of the substrate 9 is equal to each other (that is, a position where the distance from the center of the substrate 9 is equal). That is, here, the separation distance from the end surface 93 of the substrate 9 to the target discharge position Qa of the first chemical solution nozzle 50a and the separation distance from the end surface 93 of the substrate 9 to the target discharge position Qb of the second chemical solution nozzle 50b are: equal.

  As an example, the target discharge position Qa of the first chemical liquid nozzle 50 a and the target discharge position Qb of the second chemical liquid nozzle 50 b are both positions that are 1.0 mm from the end surface 93 of the substrate 9. Further, the target discharge position Qd of the gas nozzle 50d is a position inside the substrate 9 by 0.5 mm further than the target discharge positions Qa and Qb of the chemical liquid nozzles 50a and 50b. Further, the target discharge position Qc of the rinsing liquid nozzle 50 c is a position within the range of 1.0 mm to 0.5 mm from the end surface 93 of the substrate 9.

  The nozzles 50a, 50b, 50c, 50d are arranged at positions shifted from each other in the radial direction of the substrate 9 so that the fluid can be discharged so as to reach the target discharge positions Qa, Qb, Qc, Qd, Supported by the support unit 500. That is, the gas nozzle 50d is disposed on the radially inner side of the substrate 9 with respect to the processing liquid nozzles 50a, 50b, and 50c, and is supported by the support portion 500. Further, the rinsing liquid nozzle 50 c is arranged on the inner side in the radial direction of the substrate 9 than the chemical liquid nozzles 50 a and 50 b and is supported by the support portion 500. Further, the first chemical liquid nozzle 50 a and the second chemical liquid nozzle 50 b are arranged at the same position in the radial direction and supported by the support portion 500. It should be noted that the amount of displacement in the arrangement of the nozzles 50a, 50b, 50c, 50d reaches the target discharge positions Qa, Qb, Qc, Qd according to the angle of the inclined channel portion 5042 described above. Is set to

  In the peripheral portion discharge head 51, the target discharge position Qd of the gas nozzle 50d is located on the inner side in the radial direction of the substrate 9 relative to the target discharge positions Qa, Qb, Qc of the processing liquid nozzles 50a, 50b, 50c. In the surface peripheral edge portion 911 of FIG. 9, the gas is supplied to a position inside the position where the processing liquid is discharged. According to this configuration, the processing liquid supplied to the surface peripheral edge portion 911 can be blown away by gas from the inside to the outside of the substrate 9. As a result, the processing liquid on the surface peripheral edge 911 can be prevented from entering the device region 90, and the dimension of the area where the processing liquid acts (for example, the dimension of the area where the chemical for etching acts, that is, the etching width) ) Can be stabilized and its control accuracy can be increased.

  Further, in the peripheral portion discharge head 51, the target discharge position Qc of the rinsing liquid nozzle 50c is located on the inner side in the radial direction of the substrate 9 relative to the target discharge positions Qa and Qb of the chemical liquid nozzles 50a and 50b. In the surface peripheral edge portion 911, the rinse liquid is discharged to a position inside the position where the chemical liquid is discharged. According to this configuration, the chemical liquid supplied to the surface peripheral edge portion 911 can be pushed away by the rinse liquid from the inside to the outside of the substrate 9. Accordingly, the chemical solution can be sufficiently rinsed away without leaving a chemical solution residue while sufficiently suppressing the chemical solution from entering the device region 90.

  Further, in the peripheral portion discharge head 51, the target discharge position Qa of the first chemical liquid nozzle 50a and the target discharge position Qb of the second chemical liquid nozzle 50b are set to the same position in the radial direction of the substrate 9. In the surface peripheral edge portion 911, the alkaline chemical liquid can be discharged to the position where the acidic chemical liquid is discharged. According to this structure, each chemical | medical solution can be made to act correctly on the same area | region.

<Liquid splash suppression unit 6>
Reference is again made to FIGS. In the substrate processing apparatus 1, when the processing liquid is discharged from the peripheral portion discharge head 51 toward the surface peripheral portion 911 of the substrate 9 held on the spin base 21, the substrate is supplied to the surface peripheral portion 911. There is a possibility that a part of the processing liquid scatters from the substrate 9 and a part of the splattered processing liquid rebounds by a member disposed outside, and reattaches to the substrate 9. The liquid splash suppressing unit 6 is a member for suppressing the processing liquid splashed from the substrate 9 from reattaching to the substrate 9.

<I. Guard member 60>
The liquid splash suppressing unit 6 includes a guard member 60. The guard member 60 will be described in detail with reference to FIGS. 11 to 13 in addition to FIGS. FIG. 11 is a perspective view of the guard member 60. FIG. 12 is a plan view of the state in which the cup 31, the guard member 60, and the peripheral discharge head 51 are disposed at the respective processing positions, as viewed from above. FIG. 13 is a sectional side view as seen from the arrow K in FIG.

  The guard member 60 is a ring-shaped member along the entire circumference of the surface peripheral edge portion 911 of the substrate 9. The guard member 60 is disposed concentrically with the substrate 9 as viewed from above while the processing on the substrate 9 held on the spin base 21 is performed, and is close to the surface peripheral portion 911 of the substrate 9 in a non-contact state. It is arranged at the position (processing position). The cross section of the guard member 60 perpendicular to the circumferential direction is preferably rectangular, and particularly preferably square.

  The inner diameter of the guard member 60 is slightly smaller than the outer diameter of the substrate 9. Therefore, when the guard member 60 disposed at the processing position is viewed from above, the inner peripheral wall 601 of the guard member 60 is on the inner side (center side of the substrate 9) than the end surface 93 of the substrate 9, and the lower surface of the guard member 60 At least an inner peripheral portion of 602 is disposed to face the surface peripheral edge portion 911 of the substrate 9 held on the spin base 21. That is, the inner peripheral wall 601 of the guard member 60 is on the inner side (center side of the substrate 9) than the surface peripheral portion of the substrate 9, and the lower surface 602 of the guard member 60 is partially close to the surface peripheral portion 911 of the substrate 9. Facing each other. At this time, the separation distance h between the lower surface 602 of the guard member 60 and the surface 91 of the substrate 9 held on the spin base 21 is, for example, 1 mm or more and 1.5 mm or less.

  The outer diameter of the guard member 60 is larger than the outer diameter of the substrate 9 and slightly smaller than the inner diameter of the upper end edge portion 301 of the cup 31. Therefore, when the guard member 60 arranged at the processing position is viewed from above, the outer peripheral wall 603 of the guard member 60 is outside the end surface 93 of the substrate 9 and is not in contact with the upper end edge 301 of the cup 31. It extends along the entire circumference of the upper edge 301 while approaching in the state of. In other words, the cup 31 disposed at the processing position is a good way to surround the substrate 9 on the spin base 21 and the guard member 60 at once.

  The peripheral edge discharge head 51 described above is disposed on the inner peripheral wall 601 side of the guard member 60 (that is, on the opposite side to the cup 31 with the guard member 60 interposed therebetween) in a state where it is disposed at the processing position. The That is, in this state, the nozzle 50 provided in the peripheral portion ejection head 51 is disposed on the opposite side of the cup 31 with the guard member 60 interposed therebetween. However, the inner peripheral wall 601 of the guard member 60 is formed with a notch 605 that accommodates at least a part of the peripheral discharge head 51, and the peripheral discharge head 51 is disposed at the processing position in the peripheral position. At least a part of the part discharge head 51 (specifically, for example, at least a part of the nozzle 50 included in the peripheral part discharge head 51) is accommodated in the notch 605. As a result, the peripheral-portion ejection head 51 is disposed at the processing position above the surface peripheral portion 911 without interfering with the guard member 60. However, the wall surface portion 6051 that is continuous with the lower surface 602 in the notch 605 is preferably flush with the end surface 93 of the substrate 9 or inside the end surface 93 (center side of the substrate 9) when viewed from above.

  In a state where the guard member 60, the peripheral portion discharge head 51, and the cup 31 are arranged at the respective processing positions, the lower surface 602 of the guard member 60 is connected to the discharge surface 502 of the nozzle 50 provided in the peripheral portion discharge head 51. It is preferable that they are arranged at the same height position or at a position lower than the discharge surface 502. Further, the wall surface portion 6051 can be disposed at a low position up to a position that does not obstruct the fluid path discharged from the nozzle 50. Further, the lower surface 602 of the guard member 60 is preferably disposed at the same height as the lower surface 3011 of the upper end edge 301 of the cup 31 or at a position lower than the lower surface 3011. In this embodiment, the lower surface 602 of the guard member 60, the ejection surface 502 of the peripheral portion ejection head 51, and the lower surface 3011 of the upper end edge 301 of the cup 31 are at the same height position. That is, the three surfaces 602, 502, and 3011 are arranged on the same horizontal plane.

  Further, in a state where the guard member 60 and the cup 31 are disposed at the respective processing positions, the upper surface 604 of the guard member 60 may be disposed at the same height as the upper surface 3012 of the upper edge portion 301 of the cup 31. preferable.

<Ii. Reason why re-adhesion of treatment liquid is suppressed>
While the processing liquid is discharged from the peripheral portion discharge head 51 toward the surface peripheral portion 911, the processing liquid scattered from the substrate 9 is reattached to the substrate 9 because the guard member 60 is disposed at the processing position. Can be suppressed. The reason will be described below.

  The inner diameter of the upper edge 301 is larger than the outer diameter of the spin base 21 so that the cup 31 can move to a retracted position below the upper surface of the spin base 21. Since the outer diameter of the spin base 21 is larger than the outer diameter of the substrate 9, when viewed from above, the end surface 93 of the substrate 9 held on the spin base 21, the upper edge portion 301 of the cup 31, and Between them, there is a ring-shaped gap space. Therefore, a gap space V also exists between the peripheral portion discharge head 51 disposed at the processing position facing the surface peripheral portion 911 of the substrate 9 and the upper end edge portion 301 of the cup 31. The gap space V is a space where mist or the like of the processing liquid splashed from the substrate 9 can float. Here, at least a part of the gap space V is filled with a part of the guard member 60. According to this configuration, the space in which the mist or the like of the processing liquid scattered from the substrate 9 can float is reduced by the space filled with the guard member 60, and the processing liquid in the vicinity of the substrate 9 is reduced by the amount of the space. The amount of floating is reduced. As a result, the possibility that the mist or the like of the processing liquid reattaches to the substrate 9 is reduced. That is, it is possible to suppress a part of the processing liquid scattered from the substrate 9 from reattaching to the substrate 9.

  In particular, here, since at least a part of the lower surface 602 of the guard member 60 is disposed opposite to the surface peripheral edge portion 911, the processing liquid scattered from the substrate 9 enters the cup 31 along the lower surface 602 of the guard member 60. It is guided. Thereby, it is possible to sufficiently suppress the scattered processing liquid from reattaching to the substrate 9.

  In particular, the lower surface 602 of the guard member 60 was scattered from the substrate 9 by being arranged at the same height as the ejection surface 502 of the nozzle 50 included in the peripheral-portion ejection head 51 or at a position lower than the ejection surface 502. It has been confirmed by the inventors that the treatment liquid can be particularly effectively suppressed from adhering to the substrate 9 (particularly, the device region 90).

  In addition, by disposing the lower surface 602 of the guard member 60 at the same height as the lower surface 3011 of the upper end edge 301 of the cup 31 or at a position lower than the lower surface 3011, the processing liquid scattered from the substrate 9 is The inventors have confirmed that adhesion to the substrate 9 (particularly, the device region 90) can be particularly effectively suppressed.

  Furthermore, here, since the guard member 60 is a ring-shaped member along the entire circumference of the surface peripheral edge portion 911 of the substrate 9, the treatment liquid scattered from the substrate 9 is reattached to the substrate 9. It can suppress over the whole circumferential direction.

<Iii. Semicircular arc members 61, 62>
The guard member 60 has a plurality of arc-shaped members (here, a pair of semicircular arc members 61 and 62) configured separately from each other, and the circumferential end surfaces thereof are in contact with each other. Is formed. That is, each of the pair of semicircular arc members 61 and 62 is a semicircular arc member having the same diameter, and is arranged with the chord direction facing inward and the end faces in the circumferential direction facing each other. However, the guard member 60 may be formed by setting three or more arc-shaped members in a state in which the circumferential end surfaces thereof are in contact with each other.

  Each of the pair of semicircular arc members 61 and 62 is provided with a semicircular arc member driving portion 63 for driving the semicircular arc members 61 and 62. The semicircular arc member drive unit 63 includes an elevating drive unit (for example, a stepping motor) 631 that moves the semicircular arc members 61 and 62 connected thereto up and down along the vertical axis, and the semicircular arc members 61 and 62. An advancing / retreating drive unit 632 that moves forward and backward in the direction of approaching and separating from the other semicircular arc member in the horizontal plane is configured.

  The semicircular arc members 61 and 62 are spaced apart from the other semicircular arc member and disposed at a position outside the loading / unloading path of the substrate 9 (retreat position) while the substrate 9 is not held on the spin base 21. Is done. Specifically, the retracted positions of the semicircular arc members 61 and 62 are positions below the upper surface of the spin base 21 (that is, the upper surface 604 of the semicircular arc members 61 and 62 is higher than the upper surface of the spin base 21. And a position outside the upper end edge 301 of the cup 31 as viewed from above (position shown in FIG. 3).

  When the substrate 9 is held on the spin base 21, the elevating drive unit 631 raises the semicircular arc members 61 and 62 arranged at the retracted position to a position slightly above the upper surface of the spin base 21. Subsequently, the advancing / retreating drive unit 632 moves the semicircular arc members 61, 62 in a direction approaching the other semicircular arc member in the horizontal plane, and the end faces in the circumferential direction of the semicircular arc members 61, 62 are mutually connected. A state where they come into contact with each other. As a result, the guard member 60, which is a ring-shaped member, is placed at the processing position.

<Iv. Cleaning process>
As described above, while the substrate 9 is not held on the spin base 21, the semicircular arc members 61 and 62 and the cup 31 are arranged at the respective retracted positions. However, as described above, in a state where the semicircular arc members 61 and 62 and the cup 31 are arranged at the respective retracted positions, the semicircular arc members 61 and 62 and the cup 31 are all located above the upper surface of the spin base 21. The semicircular arc members 61 and 62 are disposed on the lower side, and are disposed on the upper side of the cup 31 at positions close to the upper surface of the cup 31 in a non-contact state.

  By the way, in the substrate processing apparatus 1, in a state where the substrate 9 is not held on the spin base 21, it is regularly (for example, every time a certain number of substrates 9 are processed) or irregularly (for example, In response to an instruction from the operator, the spin base 21 is cleaned.

  In the cleaning process of the spin base 21, the spin base 21 is rotated while the cleaning liquid is supplied from the cleaning nozzle (not shown) to the vicinity of the center of the upper surface of the spin base 21 in a state where the substrate 9 is not held. The Then, the cleaning liquid spreads over the entire upper surface of the spin base 21 due to the centrifugal force associated with the rotation of the spin base 21, thereby cleaning the entire upper surface of the spin base 21. This cleaning liquid is finally spun off from the peripheral portion of the spin base 21 to the outside of the spin base 21. Here, while the spin base 21 is being cleaned, each of the semicircular arc members 61 and 62 and the cup 31 are disposed at the retracted position below the upper surface of the spin base 21. The cleaning liquid shaken off from the peripheral portion to the outside of the spin base 21 reaches the cup 31 and the semicircular arc members 61 and 62 on the upper side thereof. Thereby, the cup 31 and the semicircular arc members 61 and 62 are cleaned. That is, in the cleaning process of the spin base 21, not only the spin base 21 but also the cup 31 and the semicircular arc members 61 and 62 are cleaned together.

<Heat treatment part 7>
Reference is again made to FIGS. The heat treatment unit 7 heats the substrate 9 by supplying steam (water vapor), particularly preferably superheated steam (superheated water vapor), to the back surface 92 of the substrate 9 held on the spin base 21.

  The heat treatment unit 7 includes a steam nozzle 71 that discharges steam toward the back surface 92 of the substrate 9 held on the spin base 21. The steam nozzle 71 is disposed on the spin base 21. A plurality of steam discharge ports (not shown) are formed on the upper surface side of the steam nozzle 71. At least one steam discharge port among the plurality of steam discharge ports is formed at a position where steam is selectively supplied to the back surface peripheral portion 921 of the substrate 9 held on the spin base 21. . More preferably, it is formed at a position facing the rear surface peripheral edge portion 921. Further, a larger amount of steam can be discharged from the steam discharge port than other steam discharge ports. With this configuration, the steam nozzle 71 can discharge steam mainly on the back surface 92 of the substrate 9, particularly toward the back surface peripheral portion 921.

  The steam nozzle 71 is connected to a steam supply unit 72 which is a piping system for supplying steam thereto. Specifically, the steam supply unit 72 has a configuration in which, for example, a steam supply source 721 that is a supply source for supplying steam is connected to the steam nozzle 71 via a pipe 722 in which an on-off valve 723 is inserted. I have. In this configuration, when the on-off valve 723 is opened, steam supplied from the steam supply source 721 is discharged from the steam nozzle 71.

  The steam discharged from the steam nozzle 71 is preferably superheated steam (superheated steam) heated (superheated) to a sufficiently high temperature (for example, 100 ° C. or higher and 130 ° C. or lower). For this purpose, for example, the steam supply source 721 is provided in the middle of the route of the supply source for supplying steam (water vapor) generated by heating pure water or the like, the pipe connected thereto, and the pipe. What is necessary is just to comprise including the heater inserted (all are abbreviate | omitting illustration). In this case, the steam supplied from the supply source takes into account the temperature drop when passing through the piping or the like, and the heater heats the steam supplied from the supply source to, for example, about 140 ° C. to 160 ° C. (overheating). It is preferable to do. However, even if a part of the steam (superheated steam) supplied to the substrate 9 is cooled by being deprived of heat by the substrate 9 and condensed on the substrate 9 to form water droplets, The centrifugal force accompanying the rotation causes the end surface 93 of the substrate 9 to be shaken out of the substrate 9. Accordingly, water droplets do not adhere to the device region 90.

  When steam is supplied from the steam supply unit 72 to the steam nozzle 71, steam is discharged from the steam nozzle 71 toward the back surface 92 of the substrate 9 held on the spin base 21, thereby heating the substrate 9. Will be. As described above, the steam nozzle 71 according to this embodiment can discharge steam intensively toward the back surface peripheral portion 921, so that the back surface peripheral portion 921 can be heated particularly intensively. However, the on-off valve 723 of the steam supply unit 72 is electrically connected to the control unit 130 and is opened and closed under the control of the control unit 130. That is, the discharge mode of the steam from the steam nozzle 71 (specifically, the discharge start timing, the discharge end timing, the discharge flow rate, etc.) is controlled by the control unit 130.

<Back treatment section 8>
The back surface processing unit 8 performs processing on the back surface 92 of the substrate 9 held on the spin base 21. Specifically, the back surface processing unit 8 supplies the processing liquid to the back surface 92 of the substrate 9 held on the spin base 21.

  The back surface processing unit 8 includes a supply pipe 81 disposed so as to penetrate through the hollow portion of the rotating shaft portion 22 of the spin chuck 2. The distal end of the supply pipe 81 is opened on the upper surface of the spin base 21, and this opening forms a rear surface side discharge port 82.

  The supply pipe 81 is connected to a treatment liquid supply unit 83 which is a piping system for supplying a treatment liquid thereto. Specifically, the processing liquid supply unit 83 includes an SC-1 supply source 831a, a DHF supply source 831b, an SC-2 supply source 831c, a rinse liquid supply source 831d, a plurality of pipes 832a, 832b, 832c, 832d, and A plurality of on-off valves 833a, 833b, 833c, and 833d are combined.

  The SC-1 supply source 831a is a supply source that supplies SC-1. The SC-1 supply source 831a is connected to the supply pipe 81 via a pipe 832a in which an on-off valve 833a is inserted. Therefore, when the on-off valve 833a is opened, SC-1 supplied from the SC-1 supply source 831a is discharged from the back side discharge port 82.

  The DHF supply source 831b is a supply source that supplies DHF. The DHF supply source 831b is connected to the supply pipe 81 via a pipe 832b in which an on-off valve 833b is inserted. Therefore, when the on-off valve 833b is opened, DHF supplied from the DHF supply source 831b is discharged from the rear surface side discharge port 82.

  The SC-2 supply source 831c is a supply source that supplies SC-2. The SC-2 supply source 831c is connected to the supply pipe 81 via a pipe 832c in which an on-off valve 833c is inserted. Therefore, when the on-off valve 833c is opened, SC-2 supplied from the SC-2 supply source 831c is discharged from the back side discharge port 82.

The rinse liquid supply source 831d is a supply source that supplies a rinse liquid. Here, the rinse liquid supply source 831d supplies, for example, pure water (carbonated water) in which carbon dioxide (CO ₂ ) is melted as a rinse liquid. The rinse liquid supply source 831d is connected to the supply pipe 81 via a pipe 832d in which an on-off valve 833d is inserted. Therefore, when the on-off valve 833d is opened, the rinsing liquid supplied from the rinsing liquid supply source 831d is discharged from the rear surface side discharge port 82. Note that pure water, warm water, ozone water, magnetic water, reduced water (hydrogen water), various organic solvents (ion water, IPA (isopropyl alcohol), functional water, and the like) may be used as the rinse liquid.

  When the processing liquid (SC-1, DHF, SC-2, or rinsing liquid) is supplied from the processing liquid supply unit 83 to the supply pipe 81, the substrate held on the spin base 21 from the rear surface side discharge port 82. The processing liquid is discharged toward the vicinity of the center of the back surface 92 of N. However, each of the on-off valves 833a, 833b, 833c, and 833d provided in the processing liquid supply unit 83 is electrically connected to the control unit 130 and is opened and closed under the control of the control unit 130. In other words, the control unit 130 controls the discharge mode of the processing liquid from the back-side discharge port 82 (specifically, the type of processing liquid to be discharged, the discharge start timing, the discharge end timing, the discharge flow rate, etc.). .

<4. Operation of Substrate Processing Apparatus 1>
Next, the operation of the substrate processing apparatus 1 will be described. In the substrate processing apparatus 1, a series of processes described below are executed under the control of the control unit 130. However, what is described below is only an example of processing that can be executed by the substrate processing apparatus 1.

  In the substrate processing apparatus 1, for example, for one substrate 9, pre-processing (step S1), front surface peripheral processing (step S2), processing surface switching processing (step S3), back surface processing (step S4), and A drying process (step S5) is performed in this order (FIG. 14). Below, each process is demonstrated concretely.

<4-1. Pretreatment>
The preprocessing (step S1) will be described with reference to FIGS. FIG. 15 is a diagram showing the flow of preprocessing. FIG. 16 is a diagram for explaining the preprocessing, and schematically shows some elements of the substrate processing apparatus 1 in a state in which each processing step in the preprocessing is executed.

  First, in a state where the semicircular arc members 61 and 62, the cup 31, the peripheral discharge head 51, and the cover gas nozzle 41 are disposed at the respective retreat positions, the transfer robot CR moves the substrate 9 on the surface 91 thereof. Is placed on the spin base 21 in a posture facing upward. The substrate 9 disposed on the spin base 21 is held by the group of holding members 25 (step S101). As a result, the substrate 9 is held in a substantially horizontal position on the spin base 21.

  When the substrate 9 is held on the spin base 21, the guard member 60 is moved to the processing position (step S102). Specifically, the elevating drive unit 631 of the semicircular member driving unit 63 raises the semicircular members 61 and 62 arranged at the retracted position to a position slightly above the upper surface of the spin base 21, Subsequently, the advancing / retreating drive unit 632 of the semicircular arc member driving unit 63 moves each semicircular arc member 61, 62 in a direction approaching the other semicircular arc member in the horizontal plane, so that the circumference of each semicircular arc member 61, 62 is increased. End surfaces in the direction are in contact with each other. As a result, the guard member 60, which is a ring-shaped member, is placed at the processing position. Note that the guard member 60 arranged at the processing position remains stationary without being rotated even when the spin base 21 starts to rotate.

  When the guard member 60 is disposed at the processing position, the cup 31 disposed at the retreat position is subsequently raised and disposed at the processing position (step S103). As a result, the cup 31 is arranged so as to surround the substrate 9 and the guard member 60 held on the spin base 21 together.

  When the cup 31 is disposed at the processing position, the cover gas nozzle 41 is subsequently moved from the retracted position to the processing position. Then, the cover gas is started to be discharged from the cover gas nozzle 41 arranged at the processing position toward the center of the surface 91 of the substrate 9 (step S104). The supply of the cover gas started near the center of the surface 91 of the substrate 9 is continued until the processing on the substrate 9 is completed. By continuously supplying the cover gas near the center of the surface 91 of the substrate 9, the device region 90 is exposed to the atmosphere of the processing liquid supplied to the surface peripheral portion 911 and the like while the processing on the substrate 9 is performed. There is nothing to do. That is, the device region 90 continues to be protected from the atmosphere of the processing liquid supplied to the surface peripheral portion.

  Here, discharge of the cover gas from the cover gas nozzle 41 is started after the cup 31 is arranged at the processing position. If the discharge of the cover gas from the cover gas nozzle 41 is started without waiting for the cup 31 to be raised to the processing position, the airflow in the vicinity of the surface peripheral edge portion 911 of the substrate 9 is disturbed and rolled up. Thus, if there is a possibility that particles or the like may adhere to the substrate 9, such a situation can be avoided if discharge of the cover gas is started after the cup 31 is placed at the processing position.

  Subsequently, the rotation of the spin base 21 is started, whereby the substrate 9 held on the spin base 21 is started to rotate in a horizontal posture (step S105). At this time, the rotation speed of the spin base 21 (that is, the rotation speed of the substrate 9) is, for example, 600 rpm. The rotation speed is such that the processing liquid supplied to the surface peripheral edge portion 911 does not enter the device region 90 and does not move to the end portion 93 side during the surface peripheral edge processing. The number is appropriately set (that is, the number of rotations at which the processing liquid is stably held in the region in the surface peripheral portion 911 to be processed).

  Subsequently, steam is discharged from the steam nozzle 71 toward the back surface 92 of the rotated substrate 9 (press team) (step S106). When a predetermined time (for example, 5 seconds) elapses after the steam starts to be discharged, the discharge of the steam from the steam nozzle 71 is stopped. The substrate 9 is heated by this press team. Most of the chemicals used for the chemical treatment on the substrate 9 are chemicals whose reaction is accelerated as the temperature rises. However, the substrate 9 is heated in advance by the press team, so that the chemical solution and the substrate 9 in the chemical treatment are used. Reaction with is promoted. As a result, the treatment time of the chemical solution is shortened and the amount of the chemical solution used is suppressed.

<4-2. Surface edge treatment>
When the preprocessing (step S1) is completed, the surface peripheral processing (step S2) is subsequently performed. The surface edge processing will be described with reference to FIGS. FIG. 17 is a diagram showing the flow of the surface peripheral edge processing. FIG. 18 is a diagram for explaining the surface periphery processing, and schematically shows some elements of the substrate processing apparatus 1 in a state in which each processing step in the surface periphery processing is executed.

  However, the substrate 9 continues to be rotated at a constant rotation speed (for example, 600 rpm) while the surface edge processing described below is performed. Further, as described above, the cover gas is continuously supplied from the cover gas nozzle 41 toward the vicinity of the center of the surface 91 of the substrate 9 while the surface peripheral edge processing is being performed. It is protected from the atmosphere of the processing liquid supplied to the peripheral edge portion 911.

<Alkali treatment (SC-1)>
<I. Chemical treatment>
First, the chemical liquid processing by SC-1 is performed on the surface peripheral edge portion 911 of the substrate 9 (step S201). Specifically, first, the peripheral discharge head 51 is moved from the retracted position to the processing position. Then, SC-1 is discharged from the second chemical liquid nozzle 50b of the peripheral portion discharge head 51 arranged at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated. The discharge flow rate of SC-1 at this time is, for example, 20 (mL / min) or more and 50 (mL / min) or less. When a predetermined time (for example, 20 seconds) elapses after SC-1 is started to be discharged, the discharge of SC-1 from the peripheral portion discharge head 51 is stopped.

  By this chemical processing, the thin film formed on the surface peripheral portion 911 of the substrate 9 is removed (etching processing). However, steam is discharged from the steam nozzle 71 toward the back surface 92 of the substrate 9 while this chemical treatment is being performed. The discharge flow rate of steam at this time is, for example, 500 (mL / min) or more and 2000 (mL / min) or less. Moreover, the temperature of the discharged steam is, for example, 110 ° C. or more and 130 ° C. or less. SC-1 is a chemical solution whose reaction is accelerated as the temperature rises, and the substrate 9 to be treated with the chemical solution by SC-1 is heated by being supplied with steam, whereby the surface peripheral portion 911 of the substrate 9 is heated. And SC-1 are promoted (that is, the etching rate is increased) (so-called heat assist). As a result, the processing time of the chemical solution processing by SC-1 is shortened, and the usage amount of SC-1 is suppressed. In particular, here, since the back surface peripheral portion 921 of the substrate 9 is heated preferentially, the reaction between the front surface peripheral portion 911 and SC-1 can be effectively promoted.

<Ii. Rinse processing>
Subsequently, a rinsing process is performed (step S202). Specifically, the rinsing liquid is discharged from the rinsing liquid nozzle 50c of the peripheral portion discharge head 51 disposed at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated. When a predetermined time (for example, 5 seconds) has elapsed since the start of the discharge of the rinse liquid, the discharge of the rinse liquid from the peripheral portion discharge head 51 is stopped. By this rinsing treatment, the treatment liquid (here, SC-1) adhering to the peripheral surface portion 911 is rinsed away.

<Iii. Liquid shaking off process>
Subsequently, a liquid swing-off process is performed (step S203). In the liquid shaking-off process, the processing liquid remaining in the surface peripheral edge portion 911 (here, the rinse liquid remaining in the surface peripheral edge portion 911 without being shaken off from the substrate 9 in the rinsing process in step S202) is removed. In this process, the end surface 93 is moved away from the substrate 9 toward the end surface 93 side. The processing liquid brought close to the end surface 93 side is held in the end surface 93 and the non-horizontal surface region portion in the vicinity thereof, and the processing liquid held in the non-horizontal surface region portion is unlikely to cause liquid breakage. Therefore, such processing liquids are gathered together and shaken out of the substrate 9. That is, the processing liquid remaining on the surface peripheral edge portion 911 is moved to the end surface 93 side of the substrate 9 and then shaken out of the substrate 9, so that the liquid remaining in the surface peripheral edge portion 911 is hardly generated. Most of the processing liquid that is being processed can be removed from the substrate 9.

  Specifically, the liquid shaking-off process is performed as follows, for example. First, the substrate 9 is rotated for a predetermined time in a state where the discharge of the fluid (processing liquid and gas) from the discharge head 51 for the peripheral portion toward the surface peripheral portion 911 is stopped (liquid feeding step). (Step S2031). As a result, the processing liquid remaining on the surface peripheral edge portion 911 receives a centrifugal force accompanying the rotation of the substrate 9 and moves in a direction approaching the end surface 93 of the substrate 9, so that the end surface 93 and its non-horizontal area are moved. It will be in the state held by the surface area portion. Subsequently, gas is discharged from the gas nozzle 50d of the peripheral-portion discharge head 51 disposed at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated (blowing process) (step S2032). The gas discharge flow rate at this time is, for example, 14 (L / min). As a result, the processing liquid held in the non-horizontal surface region portion receives the gas wind pressure and the centrifugal force accompanying the rotation of the substrate 9, and is swung out of the substrate 9 together. When a predetermined time (for example, 15 seconds) elapses after gas discharge from the peripheral discharge head 51 is started, gas discharge from the peripheral discharge head 51 is stopped.

  By this liquid swing-off process, most of the processing liquid remaining on the surface peripheral edge portion 911 (that is, the rinse liquid remaining on the surface peripheral edge portion 911 without being shaken off from the substrate 9 in the rinse process of step S202) It is shaken off from 9.

<First acid treatment (SC-2)>
<I. Chemical treatment>
Next, the chemical liquid process by SC-2 is performed with respect to the surface peripheral part 911 of the board | substrate 9 (step S204). Specifically, SC-2 is discharged from the first chemical solution nozzle 50a of the peripheral portion discharge head 51 disposed at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated. When a predetermined time (for example, 20 seconds) elapses after SC-2 is started to be discharged, the discharge of SC-2 from the peripheral portion discharge head 51 is stopped.

  By this chemical treatment, metal components (for example, Mo, Co, etc.) adhering to the surface peripheral portion 911 of the substrate 9 are removed (cleaning treatment). However, here, the liquid swing-off process is performed prior to the chemical process (step S203). For this reason, SC-2 is discharged toward the surface periphery 911 where almost no rinsing liquid remains. Assuming that the liquid swing-off process in step S203 is not performed, SC-2 is discharged toward the surface peripheral edge 911 where the rinse liquid remains, and the discharged SC-2 is There is a possibility that the remaining rinsing liquid may collide and jump and enter the device region 90. However, here, since the surface peripheral edge portion 911 is in a state in which almost no rinsing liquid remains by the liquid swing-off process, the processing liquid enters the device region 90 due to such collision of the processing liquid. Hateful. Further, if the liquid swing-off process in step S203 is not performed, the remaining rinse liquid and the supplied SC-2 may be mixed on the surface peripheral edge portion 911. Such a situation is unlikely to occur when processing is being performed. As a result, the desired concentration of SC-2 can be appropriately applied to the surface peripheral edge portion 911. Moreover, the contact with the rinse liquid which rinsed away SC-1 which is an alkaline chemical | medical solution, and SC-2 which is an acidic chemical | medical solution can also be avoided.

<Ii. Liquid shaking off process>
Subsequently, a liquid swing-off process is performed (step S205). The specific flow of the liquid swing-off process is as described in step S203. That is, first, the substrate 9 is rotated for a predetermined time in a state where the discharge of the fluid toward the surface peripheral portion 911 is stopped (liquid feeding step), and thereafter, for the peripheral portion disposed at the processing position. Gas is discharged from the gas nozzle 50d of the discharge head 51 toward the surface peripheral edge portion 911 of the substrate 9 to be rotated (blow off process). When a predetermined time (for example, 15 seconds) elapses after gas discharge from the peripheral discharge head 51 is started, gas discharge from the peripheral discharge head 51 is stopped.

  By this liquid swing-off process, most of the processing liquid remaining on the surface peripheral edge portion 911 (that is, SC-2 remaining on the surface peripheral edge portion 911 without being shaken off from the substrate 9 in the cleaning process in step S204). The substrate 9 is shaken off. In the cleaning process in step S204, the SC-2 remaining on the surface peripheral portion 911 without being shaken off from the substrate 9 contains impurities such as metal components removed from the substrate 9 by the cleaning process. Thereafter, the liquid is shaken off, so that the impurities are shaken off from the substrate 9 at an early stage. Therefore, the risk that the impurities removed from the substrate 9 by the chemical treatment by SC-2 are reattached to the substrate 9 is reduced.

<Iii. Rinse processing>
Subsequently, a rinsing process is performed (step S206). The specific flow of the rinsing process is the same as that in step S202. That is, the rinsing liquid is discharged from the rinsing liquid nozzle 50 c of the peripheral portion discharge head 51 disposed at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated. When a predetermined time (for example, 5 seconds) has elapsed since the start of the discharge of the rinse liquid, the discharge of the rinse liquid from the peripheral portion discharge head 51 is stopped.

  By this rinsing treatment, the treatment liquid (here, SC-2) adhering to the surface peripheral edge portion 911 is rinsed away. However, since the liquid shaking process is performed prior to the rinsing process (step S205), the surface peripheral edge portion 911 is in a state in which almost no SC-2 remains. Accordingly, the processing time for the rinsing process can be shorter than when the liquid shaking process is not performed. Further, in this rinsing process, since the rinsing liquid is discharged toward the surface peripheral edge portion 911 where almost no SC-2 remains, the processing liquid is applied to the device region 90 due to the collision of the processing liquid. Intrusion is unlikely to occur.

<Iv. Liquid shaking off process>
Subsequently, a liquid shake-off process is performed (step S207). The specific flow of the liquid swing-off process is as described in step S203. That is, first, the substrate 9 is rotated for a predetermined time in a state where the discharge of the fluid toward the surface peripheral portion 911 is stopped (liquid feeding step), and thereafter, for the peripheral portion disposed at the processing position. Gas is discharged from the gas nozzle 50d of the discharge head 51 toward the surface peripheral edge portion 911 of the substrate 9 to be rotated (blow off process). When a predetermined time (for example, 15 seconds) elapses after gas discharge from the peripheral discharge head 51 is started, gas discharge from the peripheral discharge head 51 is stopped.

  By this liquid swing-off process, most of the processing liquid remaining on the surface peripheral edge portion 911 (that is, the rinse liquid remaining on the surface peripheral edge portion 911 without being shaken off from the substrate 9 in the rinse process of step S206) It is shaken off from the substrate 9.

<Second acid treatment (DHF)>
<I. Chemical treatment>
Next, chemical treatment with DHF is performed on the surface peripheral edge portion 911 of the substrate 9 (step S208). Specifically, DHF is discharged from the first chemical solution nozzle 50 a of the peripheral portion discharge head 51 disposed at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated. The discharge flow rate of DHF at this time is, for example, 20 (mL / min) or more and 50 (mL / min) or less. When a predetermined time (for example, 10 seconds) has elapsed since the start of DHF discharge, the discharge of DHF from the peripheral discharge head 51 is stopped.

  By this chemical processing, the thin film formed on the surface peripheral portion 911 of the substrate 9 is removed (etching processing). However, here, since the liquid shake-off process is performed prior to the chemical liquid process (step S207), the DHF is discharged toward the surface peripheral edge portion 911 where the rinse liquid hardly remains. Therefore, it is difficult for the processing liquid to enter the device region 90 due to the collision of the processing liquid. In addition, since the DHF and the rinsing liquid do not mix on the surface peripheral edge 911, the desired concentration of DHF can be appropriately applied to the surface peripheral edge 911.

  However, gas is discharged from the gas nozzle 50d of the peripheral portion discharge head 51 toward the surface peripheral portion 911 while this chemical treatment is being performed. The gas discharge flow rate at this time is, for example, 14 (L / min). That is, at each position in the surface peripheral edge portion 911, the old DHF (that is, the old DHF that is supplied from the first chemical nozzle 50a one round before and is not shaken off while the substrate 9 is rotated once) is changed to the gas nozzle 50d. After being removed by the gas discharged from, new DHF is supplied to the position from the first chemical liquid nozzle 50a. According to this configuration, as described above, it is possible to suppress the entry of the processing liquid into the device region 90 due to the collision between the old processing liquid that has not been shaken off while the substrate 9 is rotated once and the newly supplied processing liquid. . Further, according to this configuration, it is possible to increase the processing efficiency by always applying fresh DHF to the substrate 9. Further, according to this configuration, it is possible to avoid a situation in which a large amount of DHF is temporarily held at each position in the surface peripheral edge portion 911. As a result, the etching width can be stabilized and the control accuracy of the etching width can be increased. Further, when DHF is supplied, the surface peripheral edge portion 911 becomes water repellent, and thus the old processing liquid held in the surface peripheral edge portion 911 may be partially thickened. When a new processing liquid is supplied in this state, the processing liquid is bounced and easily jumps. Therefore, by blowing off the old processing liquid toward the outside of the substrate 9 with the gas discharged from the gas nozzle 50d, the entry of the droplets or the like into the device region 90 is sufficiently suppressed.

<Ii. Rinse processing>
Subsequently, a rinsing process is performed (step S209). The specific flow of the rinsing process is the same as that in step S202. That is, the rinsing liquid is discharged from the rinsing liquid nozzle 50 c of the peripheral portion discharge head 51 disposed at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated. When a predetermined time (for example, 5 seconds) has elapsed since the start of the discharge of the rinse liquid, the discharge of the rinse liquid from the peripheral portion discharge head 51 is stopped.

  By this rinsing treatment, the treatment liquid (here, DHF) adhering to the surface peripheral edge portion 911 is rinsed away. However, gas is discharged from the gas nozzle 50d of the peripheral-portion discharge head 51 toward the surface peripheral portion 911 of the substrate 9 even during the rinsing process. The gas discharge flow rate at this time is, for example, 14 (L / min). That is, at each position in the surface peripheral edge portion 911, the old rinse liquid (that is, the old rinse liquid that has been supplied from the rinse liquid nozzle 50c one round before and is not shaken off while the substrate 9 is rotated once) is gas nozzle. After being removed by the gas discharged from 50d, a new rinse liquid is supplied to the position from the rinse liquid nozzle 50c. According to this configuration, as described above, it is possible to suppress the entry of the processing liquid into the device region 90 due to the collision between the old processing liquid that has not been shaken off while the substrate 9 is rotated once and the newly supplied processing liquid. . Further, according to this configuration, the old rinsing liquid containing DHF can be quickly removed from the surface peripheral edge portion 911, and a new rinsing liquid not containing DHF can be applied to the substrate 9. Therefore, the processing efficiency of the rinsing process Will increase. Further, according to this configuration, as described above, the liquid droplets of the processing liquid bounced at the surface peripheral edge portion 911 are blown out toward the outside of the substrate 9 by the airflow formed by the gas discharged from the gas nozzle 50d. Therefore, the liquid droplets and the like are sufficiently suppressed from entering the device region 90.

<Iii. Liquid shaking off process>
Subsequently, a liquid shake-off process is performed (step S210). The specific flow of the liquid swing-off process is as described in step S203. That is, first, the substrate 9 is rotated for a predetermined time in a state where the discharge of the fluid toward the surface peripheral portion 911 is stopped (liquid feeding step), and thereafter, for the peripheral portion disposed at the processing position. Gas is discharged from the gas nozzle 50d of the discharge head 51 toward the surface peripheral edge portion 911 of the substrate 9 to be rotated (blow off process). When a predetermined time (for example, 5 seconds) elapses after gas discharge from the peripheral discharge head 51 is started, gas discharge from the peripheral discharge head 51 is stopped.

  By this liquid shaking off treatment, most of the processing liquid remaining on the surface peripheral edge portion 911 (that is, the rinse liquid remaining on the surface peripheral edge portion 911 without being shaken off from the substrate 9 in the rinsing process of step S209) It is shaken off from the substrate 9.

<4-3. Processing surface switching process>
When the surface peripheral edge process (step S2) is completed, a process surface switching process (step S3) is subsequently performed. In the processing surface switching processing, the rotational speed of the spin base 21 (that is, the rotational speed of the substrate 9) is reduced (decreased) in preparation for the back surface processing (step S4) (see FIGS. 19 and 20). That is, the rotation speed of the spin base 21 is switched from the rotation speed at the time of the surface edge processing to a rotation speed smaller than this (low rotation speed). Specifically, the rotational speed of the spin base 21 is switched from 600 rpm, which is the rotational speed at the time of surface peripheral processing, to a low rotational speed (for example, 20 rpm) sufficiently smaller than this.

  However, as described above, the cover gas is continuously supplied from the cover gas nozzle 41 toward the vicinity of the center of the surface 91 of the substrate 9 while the processing surface switching process is being performed.

<4-4. Backside treatment>
When the processing surface switching process (step S3) is completed, the back surface processing (step S4) is subsequently performed. The back surface processing will be described with reference to FIGS. FIG. 19 is a diagram showing the flow of back surface processing. FIG. 20 is a diagram for explaining the back surface processing, and schematically shows some elements of the substrate processing apparatus 1 in a state where each processing step in the back surface processing is executed.

  However, as described above, the cover gas is continuously supplied from the cover gas nozzle 41 toward the vicinity of the center of the front surface 91 of the substrate 9 while the back surface processing is being performed. It is protected from the atmosphere of the processing liquid supplied to 92.

  Prior to the supply of the treatment liquid to the back surface 92, the rotation speed of the spin base 21 is switched to a low rotation speed of 20 rpm. The “low rotation speed” here means that the processing liquid supplied to the back surface 92 of the substrate 9 spreads over the entire back surface 92 in a state where the substrate 9 is rotated at the rotation speed. The speed is such that it does not wrap around the surface 91, and specifically, for example, a rotational speed corresponding to a rotational speed of 20 rpm or less.

  First, the chemical treatment by SC-1 is performed on the back surface 92 of the substrate 9 (step S401). Specifically, SC-1 is discharged from the back surface side discharge port 82 toward the center of the back surface 92 of the substrate 9 rotated at a low rotation speed. At this time, the discharge flow rate of SC-1 is, for example, 500 (mL / min) or more and 2000 (mL / min) or less. The SC-1 supplied to the vicinity of the center of the back surface 92 spreads over the entire back surface 92 due to the centrifugal force accompanying the rotation of the substrate 9, whereby the chemical treatment by SC-1 proceeds on the back surface 92 of the substrate 9. To do. Here, the thin film formed on the back surface 92 of the substrate 9 is removed by the chemical treatment by SC-1 (etching process). When a predetermined time (for example, 20 seconds) elapses after the SC-1 starts to be discharged, the SC-1 discharge from the rear surface side discharge port 82 is stopped.

  Subsequently, a rinsing process is performed (step S402). Specifically, the rinsing liquid is discharged from the back surface-side discharge port 82 toward the vicinity of the center of the back surface 92 of the substrate 9 while the substrate 9 is rotated at a low rotation speed. The rinse liquid supplied to the vicinity of the center of the back surface 92 spreads over the entire back surface 92 due to the centrifugal force accompanying the rotation of the substrate 9, whereby the treatment liquid (here, SC-1) adhering to the back surface 92 is formed. Rinse away. When a predetermined time (for example, 20 seconds) has elapsed since the start of the discharge of the rinse liquid, the discharge of the rinse liquid from the rear surface side discharge port 82 is stopped.

  Subsequently, the chemical treatment by SC-2 is performed on the back surface 92 of the substrate 9 (step S403). Specifically, SC-2 is discharged from the back surface side discharge port 82 toward the vicinity of the center of the back surface 92 of the substrate 9 while the substrate 9 is rotated at a low rotation speed. SC-2 supplied to the vicinity of the center of the back surface 92 spreads over the entire back surface 92 due to the centrifugal force accompanying the rotation of the substrate 9, whereby the chemical treatment with SC-2 proceeds on the back surface 92. Here, the metal component (for example, Mo, Co, etc.) adhering to the back surface 92 of the board | substrate 9 etc. is removed by chemical | medical solution process by SC-2 (cleaning process). When a predetermined time (for example, 20 seconds) elapses after SC-2 is started to be discharged, SC-2 discharge from the rear surface side discharge port 82 is stopped.

  Subsequently, a rinsing process is performed (step S404). The specific flow of the rinsing process is the same as that in step S402. That is, the rinsing liquid is discharged from the back surface side discharge port 82 toward the vicinity of the center of the back surface 92 of the substrate 9 while the substrate 9 is rotated at a low rotation speed. The rinse liquid supplied to the vicinity of the center of the back surface 92 spreads over the entire back surface 92 due to the centrifugal force accompanying the rotation of the substrate 9, whereby the treatment liquid (here, SC-2) adhering to the back surface 92 is formed. Rinse away. When a predetermined time (for example, 20 seconds) has elapsed since the start of the discharge of the rinse liquid, the discharge of the rinse liquid from the rear surface side discharge port 82 is stopped.

  Subsequently, a chemical treatment with DHF is performed on the back surface 92 of the substrate 9 (step S405). Specifically, DHF is discharged from the back surface side discharge port 82 toward the center of the back surface 92 of the substrate 9 while the substrate 9 is rotated at a low rotation speed. The discharge flow rate of DHF at this time is, for example, 500 (mL / min) or more and 2000 (mL / min) or less. The DHF supplied to the vicinity of the center of the back surface 92 spreads over the entire back surface 92 due to the centrifugal force accompanying the rotation of the substrate 9, whereby the chemical treatment with DHF proceeds on the back surface 92. Here, the thin film formed on the back surface 92 of the substrate 9 is removed by the chemical treatment with DHF (etching treatment). When a predetermined time (for example, 10 seconds) has elapsed since the start of the DHF discharge, the discharge of the DHF from the rear surface side discharge port 82 is stopped.

  Subsequently, a rinsing process is performed (step S406). The specific flow of the rinsing process is the same as that in step S402. That is, the rinsing liquid is discharged from the back surface side discharge port 82 toward the vicinity of the center of the back surface 92 of the substrate 9 while the substrate 9 is rotated at a low rotation speed. The rinse liquid supplied to the vicinity of the center of the back surface 92 spreads over the entire back surface 92 due to the centrifugal force accompanying the rotation of the substrate 9, whereby the processing liquid (here, DHF) adhering to the back surface 92 is rinsed. Washed away. When a predetermined time (for example, 22.5 seconds) elapses after the start of the discharge of the rinse liquid, the discharge of the rinse liquid from the rear surface side discharge port 82 is stopped. This completes the back surface processing.

<4-5. Drying process>
When the back surface process (step S4) is completed, a drying process (step S5) is subsequently performed. In the drying process, in a state where the discharge of the processing liquid toward the substrate 9 is stopped, the rotation speed of the spin base 21 (that is, the rotation speed of the substrate 9) is changed from the low rotation speed at the time of performing the back surface processing. Thus, the rotational speed is increased to a relatively high speed during drying (see FIGS. 19 and 20). Thereby, the rinse liquid adhering to the back surface 92 of the substrate 9 is gradually shaken off, and the substrate 9 is finally dried. However, as described above, the cover gas is continuously supplied from the cover gas nozzle 41 to the surface 91 of the substrate 9 while the drying process is being performed, so that the device region 90 can be removed from the atmosphere of the processing liquid and the like. Protected.

  When a predetermined time elapses after the substrate 9 starts rotating at the rotation speed at the time of drying, the rotation of the spin base 21 is stopped. Thereafter, the gas discharge from the cover gas nozzle 41 is stopped, and the cover gas nozzle 41 is moved to the retracted position. Further, the peripheral portion discharge head 51, the cup 31, and the semicircular arc members 61 and 62 are moved to the respective retracted positions. Then, the group of holding members 25 opens the substrate 9, and the transfer robot CR carries the substrate 9 out of the substrate processing apparatus 1. Thus, a series of processes for the substrate 9 is completed.

<5. Effect>
According to the above embodiment, the processing for the front surface peripheral portion 911 of the substrate 9 and the processing for the back surface 92 of the substrate 9 are continuously performed while the substrate 9 is held on the spin base 21. As a result, it is possible to process both the front surface peripheral portion 911 and the back surface 92 of the substrate 9 while suppressing a decrease in throughput. On the other hand, according to the above embodiment, the processing liquid is discharged toward the front surface peripheral portion 911 of the substrate 9 and the back surface 92 of the substrate 9. The amount of the processing liquid retained in each can be controlled stably. Further, according to the above-described embodiment, since the processing liquid is supplied toward the back surface 92 after the processing liquid is supplied to the front surface peripheral portion 911, the processing liquid supplied to the front surface peripheral portion 911 is Even if the substrate 9 scatters and adheres to the back surface 92, the attached processing solution can be poured off by the processing solution supplied to the back surface 92 of the substrate 9. Therefore, both the front surface peripheral portion 911 and the back surface 92 can be appropriately processed. As described above, according to the above-described embodiment, it is possible to appropriately process both the front surface peripheral portion 911 and the back surface 92 while suppressing a decrease in throughput.

  Further, according to the above embodiment, the rotation speed of the substrate 9 is reduced before the processing liquid is discharged toward the back surface 92. That is, the substrate 9 is rotated at a relatively high speed while the processing liquid is supplied to the front surface peripheral portion 911, and the substrate 9 is driven at a relatively low speed while the processing liquid is supplied to the back surface 92. Will be rotated. According to this configuration, the processing liquid supplied to the front surface peripheral portion 911 can be prevented from entering the device region 90, and the processing liquid supplied to the back surface 92 wraps around the front surface 91 of the substrate 9 to form the device. Entering the region 90 is also suppressed.

  Further, according to the above embodiment, at least a part of the gap space V between the peripheral portion ejection head 51 and the cup 31 is filled with the guard member 60. According to this configuration, the space in which the mist of the processing liquid scattered from the substrate 9 can float is reduced by the space filled with the guard member 60, and the mist of the processing liquid is reduced by the amount of the space. The possibility of redeposition to 9 is reduced. That is, it is possible to suppress a part of the processing liquid scattered from the substrate 9 from reattaching to the substrate 9.

<6. Modification>
In the above embodiment, steam supply (heat assist) to the back surface 92 of the substrate 9 is performed during the chemical treatment by SC-2 (step S201) and the chemical treatment by DHF (step S208). Not. That is, in the above-described embodiment, since the chemical process by SC-2 is a chemical process that advances a cleaning process instead of an etching process, the heat assist is omitted. Further, since DHF is etched at a relatively high etching rate even without heat assist, heat assist is omitted even during chemical treatment with DHF. However, depending on the processing target or the like, steam may be supplied to the back surface 92 of the substrate 9 while the chemical treatment by SC-2 or the chemical treatment by DHF is performed.

  Moreover, in said embodiment, the chemical | medical solution process (step S201) by SC-1 and the subsequent rinse process (step S202), the chemical | medical solution process by SC-2 (step S204), and the subsequent rinse process ( In each process of step S206), the gas is not supplied from the gas nozzle 50d to the surface peripheral edge portion 911. When SC-1 or SC-2 is supplied, the surface peripheral edge portion 911 becomes hydrophilic, so that the liquid film of the processing solution supplied here becomes relatively stable only by centrifugal force due to the rotation of the substrate. This is because, when the gas is supplied to the surface peripheral edge portion 911 in such a state, there is a risk of causing liquid splashing. However, depending on the processing target or the like, gas may be supplied to the surface peripheral edge portion 911 while each of the above processes is performed.

  Moreover, in said embodiment, the liquid shake-off process is not performed after the chemical | medical solution process by SC-1. In the above-described embodiment, when the etching process is performed on the substrate 9 by the chemical process by SC-1, the rinse process is performed without performing the liquid swing-off process after the etching process, and the chemical solution used for the etching is changed. This is because the etching width and the etching depth can be well controlled by rinsing quickly. When SC-1 is supplied, the surface peripheral portion 911 becomes hydrophilic. Therefore, the SC-1 remaining in the surface peripheral portion 911 at the time when the chemical treatment by SC-1 is completed is the surface peripheral portion 911. It is in a state of spreading thinly above. Even when the rinse liquid that is the next treatment liquid is supplied to the surface peripheral edge portion 911 in such a state, the liquid splash is relatively unlikely to occur. That is, even if the liquid shake-off process after the chemical process by SC-1 is omitted, it is unlikely to be a serious problem. However, depending on the processing target and the like, the liquid shake-off process may be performed after the chemical liquid processing by SC-1 is performed. For example, when the chemical treatment by SC-1 is performed on the substrate 9 instead of an etching treatment (for example, a cleaning treatment for removing organic substances adhering to the surface peripheral portion 911 of the substrate 9), the SC- It is rather preferable to perform the liquid shaking off treatment after the chemical treatment by 1.

  Moreover, in said embodiment, the liquid shake-off process is not performed after the chemical | medical solution process by DHF. In the above embodiment, when the etching process is performed on the substrate 9 by the chemical process using DHF, as described above, the rinsing process is performed without performing the liquid swing-off process after the etching process, and the substrate 9 is subjected to the etching. This is because the etching width and the etching depth can be satisfactorily controlled by rinsing the chemical quickly. Note that when the DHF is supplied, the surface peripheral edge portion 911 becomes water-repellent, and thus the surface peripheral edge portion 911 is in a state where the processing liquid hardly remains. In addition, in the above-described embodiment, since the gas is supplied from the gas nozzle 50d to the surface peripheral portion 911 while the chemical treatment by DHF is performed, unnecessary DHF supplied to the surface peripheral portion 911 is used. Most of them are removed from the end face 93 of the substrate 9. Therefore, when the chemical treatment by DHF is completed (without performing the liquid swing-off treatment), almost no DHF remains in the surface peripheral edge portion 911 of the substrate 9. Therefore, the necessity of performing the liquid swing-off process after the chemical process with DHF is particularly scarce. However, depending on the processing target or the like, the liquid shake-off process may be performed after the chemical liquid treatment with DHF is performed.

  Moreover, in said embodiment, in each of a surface periphery process (step S2) and a back surface process (step S4), the chemical | medical solution process using three types of chemical | medical solutions (SC-1, SC-2, and DHF) However, although the rinsing process and the like are performed in order, it is not always necessary to perform the chemical treatment using these three types of chemical solutions. For example, an aqueous solution such as SC-1, SC-2, DHF, BDHF (buffered hydrofluoric acid), HF (hydrofluoric acid), hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, oxalic acid or ammonia, or a mixture thereof The chemical liquid treatment may be performed on the front surface peripheral portion 911 or the back surface 92 using one or more chemical liquids selected from a solution and the like.

  The fluid supply unit 55 according to the above embodiment includes a hydrofluoric acid supply source that supplies hydrofluoric acid (for example, 49% hydrofluoric acid), a hydrochloric acid supply source that supplies hydrochloric acid, and a peroxide that supplies hydrogen peroxide. Hydrogen supply source, ammonium hydroxide supply source for supplying ammonium hydroxide, pure water supply source for supplying pure water, carbon dioxide gas supply source for supplying carbon dioxide gas, nitrogen gas supply source for supplying nitrogen gas, piping, An on-off valve and a mixing valve may be combined. In this configuration, for example, DHF is generated by mixing hydrofluoric acid from a hydrofluoric acid supply source and pure water from a pure water supply source at a predetermined ratio in the mixing valve, and this is generated at the peripheral portion. To the discharge head 51 (specifically, the first chemical nozzle 50a). SC-2 is generated by mixing hydrochloric acid from the hydrochloric acid supply source and hydrogen peroxide from the hydrogen peroxide supply source at a predetermined ratio in the mixing valve. It is supplied to the head 51 (specifically, the first chemical liquid nozzle 50a). In addition, ammonium hydroxide from an ammonium hydroxide supply source, hydrogen peroxide from a hydrogen peroxide supply source, and pure water from a pure water supply source are mixed in a predetermined ratio in the mixing valve. SC-1 is generated by this, and this is supplied to the peripheral discharge head 51 (specifically, the second chemical nozzle 50b). Further, the rinsing liquid is generated by melting carbon dioxide in the pure water from the pure water supply source, and this is supplied to the peripheral edge discharge head 51 (specifically, the rinsing liquid nozzle 50c).

  In the above embodiment, the heat treatment unit 7 is configured to heat the substrate 9 using steam. However, the heat treatment unit 7 may include other heating sources (for example, a heating wire heater, a lamp heater, Etc.) may be used to heat the substrate 9. But the aspect which heats the board | substrate 9 using a steam can heat the board | substrate 9 locally in a short time compared with the aspect which heats the board | substrate 9 with a heating wire heater or a lamp heater (as a result, It is particularly preferable because a good throughput can be realized).

  Further, in the above embodiment, in the liquid shaking process, the liquid feeding process (step S2031) and the blowing process (step S2032) are sequentially performed. However, the liquid feeding process (step S2031) and the blowing process are performed. The process (step S2032) may be performed in parallel.

  Moreover, the timing which performs a liquid swing-off process is illustrated in said embodiment, and is not restricted to a timing. For example, the liquid swing-off process after the chemical liquid process by SC-2 may be omitted, and at least one of the liquid swing-off processes after each rinse process may be omitted. Moreover, as above-mentioned, a liquid shake-off process may be performed after the chemical | medical solution process by SC-1, and a liquid shake-off process may be performed after the chemical | medical solution process by DHF.

  In the peripheral portion discharge head 51 according to the above-described embodiment, the first chemical liquid nozzle 50a is upstream of the rinse nozzle 50c in the rotational direction AR9 of the substrate 9, and the second chemical liquid nozzle 50b is downstream. However, the second chemical liquid nozzle 50b may be disposed on the upstream side in the rotation direction AR9 of the substrate 9 and the first chemical liquid nozzle 50a may be disposed on the downstream side with respect to the rinse nozzle 50c.

  In the above embodiment, at least a part of the peripheral edge discharge head 51 is formed on the inner peripheral wall 601 of the guard member 60 in a state where the peripheral edge discharge head 51 is disposed at the processing position. In the state where the peripheral portion discharge head 51 is disposed at the processing position, at least a part of the peripheral portion discharge head 51 (specifically, for example, the peripheral portion discharge head). For example, at least a part of the nozzles 50 included in the head 51 may be accommodated in a through-hole penetrating from the upper surface 604 to the lower surface 602 of the guard member 60. That is, the nozzle 50 included in the peripheral-portion ejection head 51 disposed at the processing position may be disposed on the opposite side of the cup 31 with a part of the guard member 60 interposed therebetween.

  Further, in the substrate processing apparatus 1 according to the above-described embodiment, processing (for example, film forming processing) other than etching processing and cleaning processing may be performed on at least one of the front surface peripheral portion 911 and the back surface 92. .

  In the above embodiment, the substrate 9 is a semiconductor wafer. However, the substrate 9 is a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a substrate for an optical disk, a substrate for a magnetic disk, a magneto-optical disk. For example, a glass substrate for a photomask, a substrate for a solar cell, and the like.

  As described above, the present invention has been shown and described in detail, but the above description is illustrative in all aspects and not limiting. Therefore, embodiments of the present invention can be modified or omitted as appropriate within the scope of the invention.

DESCRIPTION OF SYMBOLS 100 Substrate processing system 130 Control part 1 Substrate processing apparatus 2 Spin chuck 21 Spin base 25 Holding member 3 Splash prevention part 31 Cup 32 Cup drive mechanism 4 Surface protection part 41 Cover gas nozzle 45 Cover gas supply part 5 Perimeter processing part 51 For peripheral part Discharge head 55 Peripheral fluid supply section 50 Nozzle 50a First chemical nozzle 50b Second chemical nozzle 50c Rinse nozzle 50d Gas nozzle 501 Nozzle body 502 Discharge surface 503 Introductory flow path 504 Discharge flow path 5041 Vertical flow path 5042 Inclined flow path portion 505 Discharge port 6 Liquid splash suppressing portion 60 Guard member 601 Guard member inner peripheral wall 602 Guard member lower surface 603 Guard member outer peripheral wall 604 Guard member upper surface 605 Notch 61, 62 Semicircular arc member 63 Semicircular arc member Drive unit 7 Heat treatment section 71 Steam nozzle 72 Steam supply section 8 Back surface processing section 81 Supply pipe 82 Back surface side discharge port 83 Back surface processing liquid supply section 9 Substrate 90 Device region 91 Substrate surface 911 Substrate surface peripheral edge 92 Substrate back surface 93 Substrate of substrate End face

Claims (6)

A substrate holding unit that rotates the substrate around a vertical rotation axis passing through the center in the plane while holding the substrate in a horizontal posture;
A peripheral-portion discharge head for discharging a processing liquid to the peripheral portion of the surface of the substrate held by the substrate holding portion;
A back surface processing unit that discharges a processing liquid to the back surface of the substrate held by the substrate holding unit;
A control unit for controlling the substrate holding unit, the peripheral edge discharge head, and the back surface processing unit;
With
The control unit is
After the peripheral portion discharge head discharges the processing liquid toward the front surface peripheral portion of the substrate held and rotated by the substrate holding portion, the back surface processing portion performs processing toward the back surface of the substrate. To discharge the liquid,
Substrate processing equipment. The substrate processing apparatus according to claim 1,
The control unit is
After stopping the discharge of the processing liquid from the peripheral portion discharge head and before starting the discharge of the processing liquid from the back surface processing section, the rotation speed of the substrate is reduced in the substrate holding section. Let
Substrate processing equipment. The substrate processing apparatus according to claim 1, wherein:
A guard member that is in a shape along at least a portion of the surface peripheral edge of the substrate and is disposed in a non-contact state and close to the surface peripheral edge of the substrate held by the substrate holding portion;
A cup-shaped member having an open upper end, the cup provided so as to collectively surround the substrate held by the substrate holding unit and the guard member;
With
The peripheral discharge head is
Disposed at a position opposite to the cup across at least a portion of the guard member, and discharges a processing liquid toward the peripheral edge of the surface;
Substrate processing equipment. a) holding the substrate in a horizontal posture on the substrate holding unit;
b) starting the rotation of the substrate held by the substrate holding portion around a vertical rotation axis passing through the center in the plane;
c) discharging the processing liquid toward the peripheral edge of the surface of the substrate that is held and rotated by the substrate holding unit;
d) after the c) step, discharging the processing liquid toward the back surface of the substrate held and rotated by the substrate holding unit;
A substrate processing method. The substrate processing method according to claim 4,
e) a step of reducing the rotation speed of the substrate held by the substrate holding portion after the step c) and before the step d);
A substrate processing method. A substrate processing method according to claim 4 or 5, wherein
After step a) and before step b)
f) a step of disposing a guard member having a shape along at least a part of the surface peripheral portion of the substrate held by the substrate holding portion at a position close to the surface peripheral portion in a non-contact state;
g) a step of disposing a cylindrical cup having an open upper end so as to collectively surround the substrate and the guard member held by the substrate holding unit;
h) a step of disposing the peripheral edge discharge head at a position opposite to the cup across at least a part of the guard member;
A substrate processing method.

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