JP6275984B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention includes a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a glass substrate for a photomask, a substrate for a solar cell, etc. The present invention relates to a technique for performing processing on a surface peripheral portion of a substrate (simply called “substrate”).

  In a substrate, a device pattern (circuit pattern) is rarely formed as far as the end surface, and the device pattern is often formed in a surface region inside a certain width from the end surface of the substrate.

  However, in a film forming process for forming a device pattern, a film may be formed outside the region where the device pattern is formed (hereinafter simply referred to as “device region”). The film formed outside the device region is not only unnecessary, but can cause various troubles. For example, a film formed outside the device region may be peeled off during the processing step, resulting in a decrease in yield and troubles in the substrate processing apparatus.

  Therefore, there is a case where a process of removing the thin film formed outside the device region by etching (so-called bevel etching process) is performed, and an apparatus for performing such a process has been proposed (for example, Patent Documents). 1-4).

JP 2006-229057 A JP 2003-264168 A JP 2007-258274 A JP 2003-286597 A

  When processing using the processing liquid is performed on the outer peripheral surface of the device area, if a larger amount of processing liquid than the amount necessary for processing is supplied onto the peripheral surface of the surface, extra processing is performed. There is a risk that the liquid may spread toward the center of the substrate. In this case, the inner edge position of the region where the processing liquid acts on the peripheral edge portion of the surface is shifted to the center side of the substrate from the intended position. In the worst case, the processing liquid that has spread to the center side may enter the device region and cause a defect in the device pattern.

  This invention is made in view of the said subject, and it aims at providing the technique which can suppress that the excess process liquid supplied to the surface peripheral part of the board | substrate spreads to the center side of a board | substrate.

A first aspect is a substrate processing apparatus, which holds a substrate in a horizontal position, and rotates the substrate around a vertical rotation axis passing through the center in the surface thereof, and the substrate holding A peripheral edge processing head that performs processing on the peripheral surface of the substrate held by the substrate, and the peripheral processing head discharges a processing liquid toward the peripheral surface of the surface, and a processing liquid nozzle A portion of the processing liquid that is associated with the processing liquid nozzle and is discharged onto the peripheral surface of the surface is sucked out in the processing of the peripheral surface of the surface while leaving a portion necessary for the processing of the peripheral surface of the surface. And a suction tube that controls the position of the inner edge of the region where the processing liquid acts on the substrate.

  A 2nd aspect is a substrate processing apparatus which concerns on a 1st aspect, Comprising: The said process head for peripheral parts is provided with the support part which supports the said process liquid nozzle and the said suction tube integrally.

The third aspect is a substrate processing apparatus according to the first or second aspect, in the periphery for the treatment head, the suction pipe, a vicinity of the treatment liquid nozzle, the rotation of the front Stories substrate Arranged immediately after the treatment liquid nozzle in the direction.

The fourth aspect is a substrate processing apparatus according to the first or second aspect, in the periphery for the treatment head, the suction pipe, a vicinity of the treatment liquid nozzle, the rotation of the front Stories substrate In the direction just before the treatment liquid nozzle .

According to a fifth aspect of the present invention, there is provided a substrate processing apparatus, wherein the substrate is held in a horizontal posture, and the substrate is rotated about a vertical rotation axis passing through the center of the substrate, and the substrate is held. A peripheral edge processing head that performs processing on the peripheral surface of the substrate held by the substrate, and the peripheral processing head discharges a processing liquid toward the peripheral surface of the surface, and a processing liquid nozzle A suction pipe that is associated with the processing liquid nozzle, sucks excess processing liquid on the peripheral edge of the surface, and controls an inner edge position of a region where the processing liquid acts on the substrate; In a state in which the suction port opened at the tip of the tube is disposed at a suction position so as to face the peripheral surface of the surface, the end of the suction port on the center side of the substrate is the treatment in the peripheral surface of the surface. Of the area where the liquid should act From the edge position, the end face side of the substrate.

According to a sixth aspect of the present invention, there is provided a substrate processing apparatus, wherein the substrate is held in a horizontal position, and the substrate is rotated around a vertical rotation axis passing through the center of the substrate, and the substrate is held. A peripheral edge processing head that performs processing on the peripheral surface of the substrate held by the substrate, and the peripheral processing head discharges a processing liquid toward the peripheral surface of the surface, and a processing liquid nozzle A suction pipe that is associated with the processing liquid nozzle, sucks excess processing liquid on the peripheral edge of the surface, and controls an inner edge position of a region where the processing liquid acts on the substrate; In the state where the suction port opened at the tip of the tube is disposed at the suction position so as to face the peripheral edge of the surface, the end on the end surface side of the substrate in the suction port is inside the end surface of the substrate It is in.

  A seventh aspect is a substrate processing apparatus according to any one of the first to sixth aspects, wherein the processing liquid nozzle ejects the processing liquid toward a first position on the substrate, The suction tube sucks the processing liquid from the second position closer to the end face of the substrate than the first position.

  An eighth aspect is the substrate processing apparatus according to any one of the first to seventh aspects, wherein the peripheral portion processing head includes a gas nozzle that discharges gas toward the front surface peripheral portion.

  A ninth aspect is a substrate processing apparatus according to any one of the first to eighth aspects, comprising a control unit that controls the peripheral edge processing head, wherein the control unit is configured to rotate the substrate. While discharging the processing liquid from the processing liquid nozzle toward the peripheral edge of the surface, the excess processing liquid on the peripheral edge of the surface is sucked into the suction pipe.

A tenth aspect is a substrate processing method, in which a) a step of rotating the substrate around a vertical rotation axis passing through a center in the plane while holding the substrate in a horizontal posture, and b) rotation. A step of discharging a processing liquid toward the surface peripheral edge of the substrate, and c) in parallel with the step b) of the surface peripheral edge of the processing liquid discharged on the surface peripheral edge. And a step of controlling an inner edge position of a region where the processing liquid acts on the substrate by removing a portion necessary for the processing of the surface peripheral portion while sucking and removing an extra portion while leaving a portion necessary for the processing .

  According to the first aspect, the excess processing liquid can be removed from the surface peripheral edge by causing the suction pipe to suck the excessive processing liquid supplied from the processing liquid nozzle onto the surface peripheral edge. As a result, it is possible to suppress the excessive processing liquid on the surface peripheral edge from spreading to the center side of the substrate.

  According to the second aspect, the suction pipe and the processing liquid nozzle are integrally supported in the peripheral edge processing head. According to this configuration, the suction pipe and the processing liquid nozzle are integrally moved relative to each other as viewed from each position in the peripheral edge portion of the surface of the substrate to be rotated. Therefore, the supply timing of the processing liquid from the processing liquid nozzle and the suction timing of the processing liquid from the suction pipe are equal at all positions in the peripheral edge portion of the surface. Thereby, it is possible to suppress variation in the increase / decrease mode of the amount of the processing liquid held at each position in the surface peripheral edge. As a result, each position in the surface peripheral edge can be processed uniformly.

  According to the third aspect, in the peripheral portion processing head, the suction pipe is disposed in the vicinity of the corresponding processing liquid nozzle and downstream of the processing liquid nozzle in the rotation direction of the substrate. According to this configuration, immediately after a new processing liquid is supplied from the processing liquid nozzle to each position in the peripheral edge of the surface of the substrate to be rotated, the excess processing liquid supplied to the position is sucked from the suction pipe. Can do. As a result, the amount of the processing liquid held at each position in the surface peripheral edge can always be kept at a necessary and sufficient amount. As a result, the inner edge position of the area where the processing liquid acts on the peripheral edge of the surface can be controlled with high accuracy.

  According to the fourth aspect, in the peripheral portion processing head, the suction pipe is disposed in the vicinity of the corresponding processing liquid nozzle and upstream of the processing liquid nozzle in the rotation direction of the substrate. According to this configuration, excess processing liquid supplied from the processing liquid nozzle and flowing upstream in the rotation direction of the substrate can be sucked from the suction pipe and removed from the peripheral edge of the surface. As a result, it is possible to suppress the excessive processing liquid on the surface peripheral edge from spreading to the center side of the substrate. Further, according to this configuration, after the old processing liquid supplied from the processing liquid nozzle one cycle before and not shaken off while the substrate is rotated once is sucked from the suction pipe, the old processing liquid is newly added to the position from the processing liquid nozzle. Can be supplied. As a result, it is possible to suppress the occurrence of a situation in which the newly supplied processing liquid collides with the old processing liquid on the peripheral surface of the surface and the processing liquid enters the device region.

  According to the fifth aspect, in the state in which the suction tube is disposed at the suction position, the end of the substrate at the suction port is closer to the end face of the substrate than the inner edge position of the region where the processing liquid should act on the peripheral surface of the surface. On the side. According to this configuration, the suction pressure can be applied to the end face side of the substrate rather than the inner edge position of the region where the processing liquid is to be applied. Therefore, it can suppress that a process liquid protrudes inside the area | region which should make this act.

  According to the sixth aspect, in the state where the suction tube is arranged at the suction position, the end of the suction port on the end face side of the substrate is inside the end face of the substrate. According to this configuration, the suction pressure can be effectively applied to the processing liquid.

  According to the seventh aspect, the processing liquid is discharged toward the first position on the substrate, and excess processing liquid is sucked from the second position closer to the end face side of the substrate than the first position. According to this configuration, the excess processing liquid on the surface peripheral edge flows from the inside to the outside of the substrate and is sucked from the suction tube, so that the excessive processing liquid on the surface peripheral edge spreads to the center side of the substrate. This can be sufficiently suppressed.

  According to the 8th aspect, the old process liquid currently supplied to the surface peripheral part from the process liquid nozzle can be removed with the gas discharged from a gas nozzle. As a result, the occurrence of a situation in which the newly supplied processing liquid collides with the old processing liquid on the peripheral surface of the surface and the processing liquid enters the device region is suppressed.

  According to the ninth and tenth aspects, the excess processing liquid on the surface peripheral edge is sucked in parallel with the discharge of the processing liquid toward the surface peripheral edge of the rotated substrate. According to this configuration, it is possible to prevent the excess processing liquid on the surface peripheral edge from spreading to the center side of the substrate while avoiding a decrease in processing efficiency.

It is a schematic plan view which shows a substrate processing system typically. It is sectional drawing which shows the peripheral part vicinity of the board | substrate used as a process target. It is a schematic perspective view of a substrate processing apparatus. It is a schematic perspective view of a substrate processing apparatus. It is a schematic diagram for demonstrating the structure of a substrate processing apparatus. It is a perspective view of the processing head for peripheral parts. It is a sectional side view which shows typically the structure of the front-end | tip vicinity of a discharge nozzle. It is a sectional side view which shows typically the structure of the front-end | tip vicinity of a suction tube. It is a figure which shows typically the example of arrangement | positioning of a target discharge position and a target suction position. It is the figure which looked at the processing head for peripheral parts from the downstream of the rotation direction of a board | substrate. It is the figure which looked at the processing head for peripheral parts from the downstream of the rotation direction of a board | substrate. It is a figure which shows the flow of the whole operation | movement performed with a substrate processing apparatus. It is a figure which shows the flow of pre-processing. It is a figure for demonstrating pre-processing. It is a figure which shows the flow of a surface periphery process. It is a figure for demonstrating a surface periphery process. It is a figure which shows flows, such as a back surface process. It is a figure for demonstrating a back surface process. It is a perspective view of the processing head for peripheral parts concerning a modification.

  Hereinafter, embodiments will be described with reference to the drawings. The following embodiment is an example embodying the present invention, and is not an example of limiting the technical scope of the present invention. In each of the drawings referred to below, the size and number of each part may be exaggerated or simplified for easy understanding.

<1. Substrate Processing System 100>
<1-1. Configuration>
The configuration of the substrate processing system 100 will be described with reference to FIG. FIG. 1 is a schematic plan view schematically showing the substrate processing system 100.

  The substrate processing system 100 is a system that sequentially processes a plurality of substrates 9 one by one. In the following description, it is assumed that the substrate 9 to be processed in the substrate processing system 100 is, for example, a circular semiconductor wafer.

  The substrate processing system 100 controls a plurality of cells (processing blocks) arranged in parallel (specifically, the indexer cell 110 and the processing cell 120) and each operation mechanism included in the plurality of cells 110 and 120. Unit 130.

<Indexer cell 110>
The indexer cell 110 is a cell for transferring the unprocessed substrate 9 received from the outside of the apparatus to the processing cell 120 and carrying out the processed substrate 9 received from the processing cell 120 to the outside of the apparatus. The indexer cell 110 includes a carrier stage 111 on which a plurality of carriers C are placed, and a substrate transfer device (transfer robot) IR that loads and unloads the substrate 9 with respect to each carrier C.

  On the carrier stage 111, the carrier C that stores the unprocessed substrate 9 is carried from the outside of the apparatus by OHT (Overhead Hoist Transfer) or the like and placed thereon. Unprocessed substrates 9 are taken out from the carrier C one by one and processed in the apparatus, and the processed substrates 9 that have been processed in the apparatus are stored in the carrier C again. The carrier C containing the processed substrate 9 is carried out of the apparatus by OHT or the like. Thus, the carrier stage 111 functions as a substrate integration unit that integrates the unprocessed substrate 9 and the processed substrate 9. The carrier C may be a FOUP (Front Opening Unified Pod) that accommodates the substrate 9 in a sealed space, or a SMIF (Standard Mechanical Inter Face) pod or the accommodated substrate 9 is exposed to the outside air. It may be OC (Open Cassette).

  The transfer robot IR supports the substrate 9 from below, thereby holding the substrate 9 in a horizontal posture (a posture in which the main surface of the substrate 9 is horizontal), a hand driving mechanism 113 for driving the hand 112, Is provided. The transfer robot IR takes out the unprocessed substrate 9 from the carrier C placed on the carrier stage 111 and transfers the taken-out substrate 9 to the transport robot CR (described later) at the substrate delivery position P. Further, the transfer robot IR receives the processed substrate 9 from the transfer robot CR at the substrate delivery position P, and stores the received substrate 9 in the carrier C placed on the carrier stage 111.

<Processing cell 120>
The processing cell 120 is a cell for processing the substrate 9. The processing cell 120 includes a plurality of substrate processing apparatuses 1 and a substrate transfer apparatus (transfer robot CR) that loads and unloads the substrates 9 with respect to the plurality of substrate processing apparatuses 1. Here, a plurality of (for example, three) substrate processing apparatuses 1 are stacked in the vertical direction to constitute one substrate processing apparatus group 10. A plurality (four in the illustrated example) of substrate processing apparatus groups 10 are installed in a cluster shape (tuft shape) so as to surround the transfer robot CR.

  Each of the plurality of substrate processing apparatuses 1 includes a housing 11 that forms a processing space therein. The housing 11 is formed with a carry-in / out port 12 for inserting the hand 121 of the transfer robot CR into the case, and the substrate processing apparatus 1 is provided in the space where the transfer robot CR is arranged. 12 are arranged so as to face each other. A specific configuration of the substrate processing apparatus 1 will be described later.

  The transport robot CR includes a hand 121 that holds the substrate 9 in a horizontal posture by supporting the substrate 9 from below, and a hand drive mechanism 122 that drives the hand 121. However, as described above, the transfer robot CR (specifically, the base of the transfer robot CR) is arranged in the center of the space surrounded by the plurality of substrate processing apparatus groups 10. The transfer robot CR takes out the processed substrate 9 from the designated substrate processing apparatus 1 and transfers the taken-out substrate 9 to the transfer robot IR at the substrate transfer position P. Further, the transfer robot CR receives an unprocessed substrate 9 from the transfer robot IR at the substrate delivery position P, and transfers the received substrate 9 to the designated substrate processing apparatus 1.

<Control unit 130>
The control unit 130 controls each of the transfer robot IR, the transfer robot CR, and the group of substrate processing apparatuses 1. The configuration of the control unit 130 as hardware can be the same as that of a general computer. That is, the control unit 130 stores, for example, a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, control software, data, and the like. It has a magnetic disk to keep. In the control unit 130, various functional units that control each unit of the substrate processing system 100 are realized by the CPU as the main control unit performing arithmetic processing according to the procedure described in the program. However, some or all of the functional units realized in the control unit 130 may be realized in hardware by a dedicated logic circuit or the like.

<1-2. Operation>
The overall operation of the substrate processing system 100 will be described with continued reference to FIG. In the substrate processing system 100, the control unit 130 controls each unit included in the substrate processing system 100 in accordance with a recipe describing the transport procedure, processing conditions, and the like of the substrate 9, thereby executing a series of operations described below. Is done.

  When the carrier C containing the unprocessed substrate 9 is placed on the carrier stage 111, the transfer robot IR takes out the unprocessed substrate 9 from the carrier C. Then, the transfer robot IR moves the hand 112 holding the unprocessed substrate 9 to the substrate delivery position P, and delivers the unprocessed substrate 9 to the transport robot CR at the substrate delivery position P. The transport robot CR that has received the unprocessed substrate 9 on the hand 121 carries the unprocessed substrate 9 into the substrate processing apparatus 1 specified in the recipe. The transfer of the substrate 9 between the transfer robot IR and the transfer robot CR may be performed directly between the hands 112 and 121, or via a placement unit provided at the substrate transfer position P. It may be done.

  In the substrate processing apparatus 1 in which the substrate 9 is carried in, a predetermined process is performed on the substrate 9. The flow of processing executed by the substrate processing apparatus 1 will be described later.

  When the processing on the substrate 9 is completed in the substrate processing apparatus 1, the transfer robot CR takes out the processed substrate 9 from the substrate processing apparatus 1. Then, the transfer robot CR moves the hand 121 holding the processed substrate 9 to the substrate delivery position P, and delivers the processed substrate 9 to the transfer robot IR at the substrate delivery position P. The transfer robot IR that has received the processed substrate 9 on the hand 112 stores the processed substrate 9 in the carrier C.

  In the substrate processing system 100, the transfer robot CR and the transfer robot IR repeatedly perform the transfer operation described above according to the recipe, and each substrate processing apparatus 1 executes a process on the substrate 9 according to the recipe. . Thus, the processing for the substrate 9 is performed one after another.

<2. Substrate 9>
Next, the substrate 9 to be processed in the substrate processing apparatus 1 will be described with reference to FIG. FIG. 2 is a cross-sectional view showing the vicinity of the peripheral edge of the substrate 9.

A substrate 9 to be processed by the substrate processing apparatus 1 includes, for example, a central layer 901 made of silicon (Si), a lower layer film 902 formed outside the central layer 901, and an outer side of the lower layer film 902. A three-layer structure of an upper layer film 903 formed on the substrate. The lower layer film 902 is, for example, a thermal oxide film (Th—SiO ₂ ), or an insulating film (for example, an Hf (hafnium) film, an oxide Hf film, or the like). The upper layer film 903 is, for example, a barrier metal film (for example, a TiN film, a TaN film, etc.) or a metal film (for example, an Al film, a W film, a NiSi film, a Cu film, etc.). However, the substrate 9 to be processed in the substrate processing apparatus 1 may have, for example, a two-layer structure of the central layer 901 and the lower layer film 902 or a structure of four or more layers. May be.

  Hereinafter, the surface of the main surface of the substrate 9 on which the device pattern is formed is referred to as “surface 91”. Further, a surface opposite to the front surface 91 is referred to as a “back surface 92”. Further, a region on the surface 91 where a device pattern is formed is referred to as a “device region 90”. Further, a peripheral region on the surface 91 outside the device region 90 (specifically, for example, an annular shape having a minute width d (for example, d = 0.5 mm to 3.0 mm (millimeters)) from the end surface 93 of the substrate 9. Are referred to as “surface peripheral edge portion 911”. Further, an annular region having a minute width d from the end surface 93 on the back surface 92 is referred to as a “back surface peripheral portion 921”.

  The substrate processing apparatus 1 treats the substrate 9 having a multilayer structure as described above as a processing target, and removes thin films formed on the front surface peripheral portion 911 and the back surface 92 (for example, the front surface peripheral portion 911 and the back surface 92 are removed) Process).

<3. Configuration of Substrate Processing Apparatus 1>
The configuration of the substrate processing apparatus 1 will be described with reference to FIGS. FIG. 3 is a schematic perspective view of the substrate processing apparatus 1. The semicircular members 61 and 62, the cup 31, and the peripheral edge processing head 51 constituting the guard member 60 are arranged at the respective retracted positions. The state is shown. FIG. 4 is also a schematic perspective view of the substrate processing apparatus 1, in which a state in which the guard member 60, the cup 31, and the peripheral portion processing head 51 are arranged at respective processing positions is shown. Yes. FIG. 5 is a schematic diagram for explaining the configuration of the substrate processing apparatus 1.

  In the following description, “processing liquid” includes “chemical liquid” used for chemical liquid processing and “rinsing liquid” used for rinsing processing for rinsing the chemical liquid.

  The substrate processing apparatus 1 includes a spin chuck 2, a splash prevention unit 3, a surface protection unit 4, a peripheral processing unit 5, a liquid splash suppression unit 6, a heat processing unit 7, and a back surface processing unit 8. Each of these units 2 to 8 is electrically connected to the control unit 130 and operates according to an instruction from the control unit 130.

<Spin chuck 2>
The spin chuck 2 is a substrate holding unit that holds the substrate 9 in a substantially horizontal posture with the surface 91 facing upward, and the substrate 9 has a vertical rotation axis that passes through the center of the surface 91. Rotate around.

  The spin chuck 2 includes a spin base 21 that is a disk-like member that is slightly larger than the substrate 9. A rotation shaft portion 22 is connected to the central portion of the lower surface of the spin base 21. The rotating shaft portion 22 is arranged in such a posture that its axis is along the vertical direction. Further, the rotary shaft portion 22 is connected to a rotation drive portion (for example, a motor) 23 that rotates the shaft around the axis. The rotating shaft portion 22 and the rotation driving portion 23 are accommodated in a cylindrical casing 24. A plurality of (for example, six) holding members 25 are provided in the vicinity of the peripheral edge of the upper surface of the spin base 21 with appropriate intervals. The holding member 25 is in contact with the end surface 93 of the substrate 9 to position the substrate 9 in the horizontal direction, and at a position slightly higher than the upper surface of the spin base 21 (that is, at a predetermined interval from the upper surface of the spin base 21). The substrate 9 is held in a substantially horizontal posture.

  In this configuration, when the rotation drive unit 23 rotates the rotation shaft unit 22 with the holding member 25 holding the substrate 9 above the spin base 21, the spin base 21 is rotated around the axis along the vertical direction. Thereby, the substrate 9 held on the spin base 21 is rotated around a vertical rotation axis passing through the center in the plane.

  However, the holding member 25 and the rotation drive unit 23 are electrically connected to the control unit 130 and operate under the control of the control unit 130. That is, the timing of holding the substrate 9 on the spin base 21, the timing of releasing the held substrate 9, and the rotation mode of the spin base 21 (specifically, the rotation start timing, the rotation end timing, the rotation speed (that is, , Rotation speed), etc. are controlled by the control unit 130.

<Spattering prevention part 3>
The scattering prevention unit 3 receives a processing liquid or the like scattered from the substrate 9 held and rotated by the spin base 21.

  The scattering prevention unit 3 includes a cup 31. The cup 31 is a cylindrical member having an open upper end and is provided so as to surround the spin chuck 2. In this embodiment, the cup 31 includes, for example, three members: an inner member 311, an intermediate member 312, and an outer member 313.

  The inner member 311 is a cylindrical member having an open upper end, and has an annular bottom 311a, a cylindrical inner wall 311b extending upward from the inner edge of the bottom 311a, and an upper edge from the outer edge of the bottom 311a. A cylindrical outer wall portion 311c extending to the inner wall portion 311 and a cylindrical guide wall 311d erected between the inner wall portion 311b and the outer wall portion 311c. The guide wall 311d extends upward from the bottom 311a, and the vicinity of the upper end is curved inwardly upward. At least the vicinity of the tip of the inner wall portion 311b is accommodated in the inner space of the bowl-shaped member 241 provided in the casing 24 of the spin chuck 2.

  A drainage groove (not shown) that communicates with the space between the inner wall 311b and the guide wall 311d is formed in the bottom 311a. The drainage groove is connected to a factory drainage line. The drainage groove is connected to an exhaust fluid mechanism that forcibly exhausts the groove and places the space between the inner wall portion 311b and the guide wall 311d in a negative pressure state. The space between the inner wall portion 311b and the guide wall 311d is a space for collecting and draining the processing liquid used for processing the substrate 9, and the processing liquid collected in this space is discharged from the drain groove. Drained.

  The bottom 311a is formed with a first recovery groove (not shown) that communicates with the space between the guide wall 311d and the outer wall 311c. The first collection groove is connected to the first collection tank. The first recovery groove is connected to an exhaust fluid mechanism that forcibly evacuates the groove and places the space between the guide wall 311d and the outer wall portion 311c in a negative pressure state. The space between the guide wall 311d and the outer wall portion 311c is a space for collecting and recovering the processing liquid used for processing the substrate 9, and the processing liquid collected in this space is the first recovery groove. Through the first recovery tank.

  The middle member 312 is a cylindrical member having an open upper end, and is provided outside the guide wall 311 d of the inner member 311. The upper part of the middle member 312 is curved inward and upward, and the upper edge of the middle member 312 is bent along the upper edge of the guide wall 311d.

  An inner peripheral wall portion 312a extending downward along the inner peripheral surface and an outer peripheral wall portion 312b extending downward along the outer peripheral surface are formed in the lower portion of the middle member 312. The inner peripheral wall portion 312a is accommodated between the guide wall 311d and the outer wall portion 311c of the inner member 311 in a state where the inner member 311 and the middle member 312 are close to each other (the state shown in FIG. 5). Further, the lower end of the outer peripheral wall 312b is attached to the inner edge of the annular bottom 312c. A cylindrical outer wall portion 312d extending upward is erected from the outer edge portion of the bottom portion 312c.

  The bottom 312c is formed with a second recovery groove (not shown) that communicates with the space between the outer peripheral wall 312b and the outer wall 312d. The second collection groove is connected to the second collection tank. The second recovery groove is connected to an exhaust fluid mechanism that forcibly exhausts the inside of the groove and places the space between the outer peripheral wall portion 312b and the outer wall portion 312d in a negative pressure state. The space between the outer peripheral wall portion 312b and the outer wall portion 312d is a space for collecting and collecting the processing liquid used for processing the substrate 9, and the processing liquid collected in this space is the second recovery liquid. It is recovered in the second recovery tank via the groove.

  The outer member 313 is a cylindrical member having an open upper end, and is provided outside the middle member 312. The upper part of the outer member 313 is curved inward and upward, and its upper edge 301 is bent slightly inward and downward from the upper edge of the middle member 312 and the upper edge of the inner member 311. Yes. In a state where the inner member 311, the middle member 312, and the outer member 313 are close to each other (the state shown in FIG. 5), the upper edge of the middle member 312 and the upper edge of the inner member 311 are bent of the outer member 313. Covered by the done part.

  An inner peripheral wall portion 313a is formed at the lower portion of the outer member 313 so as to extend downward along the inner peripheral surface. The inner peripheral wall portion 313a is accommodated between the outer peripheral wall portion 312b and the outer wall portion 312d of the intermediate member 312 in a state where the intermediate member 312 and the outer member 313 are close to each other (the state shown in FIG. 5).

  The cup 31 is provided with a cup drive mechanism 32 that moves the cup 31 up and down. The cup drive mechanism 32 is configured by, for example, a stepping motor. In this embodiment, the cup drive mechanism 32 raises and lowers the three members 311, 312, and 313 included in the cup 31 independently.

  Each of the inner member 311, the middle member 312, and the outer member 313 receives the drive of the cup drive mechanism 32 and is moved between an upper position and a lower position. Here, the upper positions of the members 311, 312, and 313 are positions at which the upper edge portions of the members 311, 312, and 313 are arranged on the sides of the substrate 9 held on the spin base 21. On the other hand, the lower positions of the members 311, 312, and 313 are positions at which the upper edge portions of the members 311, 312, and 313 are disposed below the upper surface of the spin base 21. However, the cup drive mechanism 32 is electrically connected to the control unit 130 and operates under the control of the control unit 130. That is, the position of the cup 31 (specifically, the position of each of the inner member 311, the middle member 312, and the outer member 313) is controlled by the control unit 130.

  Pointing to the state in which the external member 313 is disposed at the lower position (that is, the state in which all of the inner member 311, the middle member 312, and the outer member 313 are disposed at the lower position), "It is in a retreat position." While the substrate 9 is not held on the spin base 21, the cup 31 is disposed at the retracted position. That is, while the substrate 9 is not held on the spin base 21, the cup 31 has an upper end edge (that is, an upper end edge of the outer member 313) 301 located below the upper surface of the spin base 21. Placed in position.

  On the other hand, the state where the outer member 313 is disposed at the upper position is referred to as “the cup 31 is at the processing position”. The upper end edge of the cup 31 at the processing position (that is, the upper end edge 301 of the outer member 313) is disposed on the side of the substrate 9 held on the spin base 21. However, the state of “the cup 31 is in the processing position” includes the following three states. The first state is a state in which the inner member 311, the middle member 312, and the outer member 313 are all arranged at the upper position (the state shown in FIG. 5). In this state, the processing liquid splashed from the substrate 9 held by the spin chuck 2 is collected in the space between the inner wall portion 311b of the inner member 311 and the guide wall 311d and drained from the drainage groove. . The second state is a state in which the inner member 311 is disposed at the lower position and the middle member 312 and the outer member 313 are disposed at the upper position. In this state, the processing liquid splashed from the substrate 9 held by the spin chuck 2 is collected in the space between the guide wall 311d and the outer wall 311c of the inner member 311 and collected in the first collection tank. The The third state is a state in which the inner member 311 and the middle member 312 are disposed at the lower position, and the outer member 313 is disposed at the upper position. In this state, the processing liquid splashed from the substrate 9 held by the spin chuck 2 is collected in the space between the outer peripheral wall portion 312b and the outer wall portion 312d of the intermediate member 312 and recovered in the second recovery tank. Is done.

<Surface protector 4>
The surface protection unit 4 supplies gas (cover gas) to the vicinity of the center of the surface 91 of the substrate 9 held on the spin base 21, and the device region 90 is supplied to the surface peripheral portion 911 and the like. Protect from the atmosphere of the processing solution.

  The surface protection unit 4 includes a cover gas nozzle 41 that discharges gas toward the vicinity of the center of the surface 91 of the substrate 9 held on the spin base 21. The cover gas nozzle 41 is attached to the tip of an arm 42 that extends horizontally. Further, the base end portion of the arm 42 is connected to the nozzle base 43. The nozzle base 43 is arranged in such a posture that its axis is along the vertical direction, and the base end portion of the arm 42 is connected to the upper end of the nozzle base 43.

  The nozzle base 43 is provided with a drive unit 44 that drives the cover gas nozzle 41. The drive unit 44 includes, for example, a rotation drive unit (for example, a servo motor) that rotates the nozzle base 43 around its axis, and a lift drive unit (for example, a stepping motor) that expands and contracts the nozzle base 43 along its axis. And comprising. When the drive unit 44 rotates the nozzle base 43, the cover gas nozzle 41 moves along an arc orbit in the horizontal plane, and when the drive unit 44 expands and contracts the nozzle base 43, the cover gas nozzle 41 is moved to the substrate 9. And move in the direction of approaching and separating.

  The cover gas nozzle 41 is driven between the processing position and the retracted position by being driven by the driving unit 44. Here, the processing position of the cover gas nozzle 41 is a position above the substrate 9 held on the spin base 21 and a position close to the surface 91 in a non-contact state while facing the vicinity of the center of the surface 91. is there. On the other hand, the retracted position of the cover gas nozzle 41 is a position that does not interfere with the transport path of the substrate 9 and is, for example, a position outside the upper end edge 301 of the cup 31 when viewed from above. The drive unit 44 is electrically connected to the control unit 130 and operates under the control of the control unit 130. That is, the position of the cover gas nozzle 41 is controlled by the control unit 130.

The cover gas nozzle 41 is connected to a cover gas supply unit 45 which is a piping system for supplying gas (here, for example, nitrogen (N ₂ ) gas). Specifically, for example, the cover gas supply unit 45 is connected to the cover gas nozzle 41 through a pipe 452 in which an on-off valve 453 is inserted, for example, a nitrogen gas supply source 451 that is a supply source for supplying nitrogen gas. It has a configuration. In this configuration, when the on-off valve 453 is opened, nitrogen gas supplied from the nitrogen gas supply source 451 is discharged from the cover gas nozzle 41. The gas supplied to the cover gas nozzle 41 may be a gas other than nitrogen gas (for example, various inert gases other than nitrogen gas, dry air, etc.).

  When the gas is supplied from the cover gas supply unit 45 to the cover gas nozzle 41 in a state where the cover gas nozzle 41 is disposed at the processing position, the surface 91 of the substrate 9 held on the spin base 21 from the cover gas nozzle 41. A gas (cover gas) is discharged toward the vicinity of the center. However, the on-off valve 453 of the cover gas supply unit 45 is electrically connected to the control unit 130 and is opened and closed under the control of the control unit 130. That is, the discharge mode (specifically, discharge start timing, discharge end timing, discharge flow rate, etc.) of the gas from the cover gas nozzle 41 is controlled by the control unit 130.

<Edge processing unit 5>
The peripheral processing unit 5 performs processing on the surface peripheral portion 911 of the substrate 9 held on the spin base 21. The peripheral processing unit 5 will be specifically described later.

<Liquid splash suppression unit 6>
In the substrate processing apparatus 1, when the processing liquid is discharged from the peripheral portion processing head 51 toward the surface peripheral portion 911 of the substrate 9 held on the spin base 21, it is supplied to the surface peripheral portion 911. There is a possibility that a part of the processing liquid scatters from the substrate 9 and a part of the splattered processing liquid rebounds by a member disposed outside, and reattaches to the substrate 9. The liquid splash suppressing unit 6 is a member for suppressing the processing liquid splashed from the substrate 9 from reattaching to the substrate 9.

  The liquid splash suppressing unit 6 includes a guard member 60 that is a ring-shaped member along the entire circumference of the surface peripheral edge 911 of the substrate 9. The guard member 60 is disposed concentrically with the substrate 9 as viewed from above while the processing on the substrate 9 held on the spin base 21 is performed, and is close to the surface peripheral portion 911 of the substrate 9 in a non-contact state. It is arranged at the position (processing position). The cross section of the guard member 60 perpendicular to the circumferential direction is preferably rectangular, and particularly preferably square.

  The inner diameter of the guard member 60 is slightly smaller than the outer diameter of the substrate 9. Therefore, when the guard member 60 disposed at the processing position is viewed from above, the inner peripheral wall of the guard member 60 is on the inner side (the center side of the substrate 9) than the end surface 93 of the substrate 9, and the lower surface of the guard member 60 is At least the inner peripheral portion is arranged to face the surface peripheral edge portion 911 of the substrate 9 held on the spin base 21. Further, the outer diameter of the guard member 60 is larger than the outer diameter of the substrate 9 and slightly smaller than the inner diameter of the upper end edge portion 301 of the cup 31. Therefore, when the guard member 60 disposed at the processing position is viewed from above, the outer peripheral wall of the guard member 60 is outside the end surface 93 of the substrate 9 and is not in contact with the upper end edge 301 of the cup 31. It extends along the entire circumference of the upper edge 301 while approaching in a state. In other words, the cup 31 disposed at the processing position is a good way to surround the substrate 9 on the spin base 21 and the guard member 60 at once.

  The peripheral processing head 51 provided in the peripheral processing section 5 (described later) is disposed on the inner peripheral wall side of the guard member 60 (that is, with respect to the cup 31 with the guard member 60 in between). On the opposite side). That is, in this state, the discharge nozzles 501 to 501d and the suction pipes 502a and 502b included in the peripheral edge processing head 51 are disposed on the opposite side of the cup 31 with the guard member 60 interposed therebetween. However, the inner peripheral wall of the guard member 60 is formed with a notch 605 that accommodates at least a part of the peripheral edge processing head 51, and the peripheral edge in the state where the peripheral edge processing head 51 is disposed at the processing position. A state in which at least a part of the processing head 51 (specifically, for example, at least a part of the discharge nozzles 501a to 501d and the suction pipes 502a and 502b included in the peripheral processing head 51) is accommodated in the notch 605. Become. Thus, the peripheral edge processing head 51 is disposed at the processing position above the surface peripheral edge 911 without interfering with the guard member 60.

  The inner diameter of the upper edge 301 is larger than the outer diameter of the spin base 21 so that the cup 31 can move to a retracted position below the upper surface of the spin base 21. Since the outer diameter of the spin base 21 is larger than the outer diameter of the substrate 9, when viewed from above, the end surface 93 of the substrate 9 held on the spin base 21, the upper edge portion 301 of the cup 31, and Between them, there is a ring-shaped gap space. Accordingly, a gap space also exists between the peripheral edge processing head 51 disposed at the processing position facing the surface peripheral edge 911 of the substrate 9 and the upper edge 301 of the cup 31. The gap space is a space where mist of the processing liquid splashed from the substrate 9 can float. Here, at least a part of the gap space is filled with a part of the guard member 60. According to this configuration, the space in which the mist or the like of the processing liquid scattered from the substrate 9 can float is reduced by the space filled with the guard member 60, and the processing liquid in the vicinity of the substrate 9 is reduced by the amount of the space. The amount of floating is reduced. As a result, the possibility that the mist or the like of the processing liquid reattaches to the substrate 9 is reduced. That is, it is possible to suppress a part of the processing liquid scattered from the substrate 9 from reattaching to the substrate 9. In particular, here, since at least a part of the lower surface of the guard member 60 is disposed opposite to the surface peripheral edge portion 911, the treatment liquid splashed from the substrate 9 is introduced into the cup 31 along the lower surface of the guard member 60. It is burned. Thereby, it is possible to sufficiently suppress the scattered processing liquid from reattaching to the substrate 9. Here, since the guard member 60 is a ring-shaped member along the entire circumference of the surface peripheral edge portion 911 of the substrate 9, the treatment liquid scattered from the substrate 9 is reattached to the substrate 9. It can suppress over the whole circumferential direction.

  The guard member 60 is configured such that a plurality of arc-shaped members (here, a pair of semicircular arc members 61 and 62) configured separately from each other are in contact with each other in the circumferential end surfaces thereof. It is formed by. That is, each of the pair of semicircular arc members 61 and 62 is a semicircular arc member having the same diameter, and is arranged with the chord direction facing inward and the end faces in the circumferential direction facing each other. Each of the pair of semicircular arc members 61 and 62 is provided with a semicircular arc member driving portion 63 that drives the semicircular arc members 61 and 62. The semicircular arc member drive unit 63 includes an elevating drive unit (for example, a stepping motor) 631 that moves the semicircular arc members 61 and 62 connected thereto up and down along the vertical axis, and the semicircular arc members 61 and 62. An advancing / retreating drive unit 632 that moves forward and backward in the direction of approaching and separating from the other semicircular arc member in the horizontal plane is configured.

  The semicircular arc members 61 and 62 are spaced apart from the other semicircular arc member and disposed at a position outside the loading / unloading path of the substrate 9 (retreat position) while the substrate 9 is not held on the spin base 21. Is done. The retracted positions of the semicircular arc members 61 and 62 are, for example, positions below the upper surface of the spin base 21 (that is, the upper surfaces of the semicircular arc members 61 and 62 are lower than the upper surface of the spin base 21. Position) and a position outside the upper edge 301 of the cup 31 as viewed from above (position shown in FIG. 3).

  When the substrate 9 is held on the spin base 21, the elevating drive unit 631 raises the semicircular arc members 61 and 62 arranged at the retracted position to a position slightly above the upper surface of the spin base 21. Subsequently, the advancing / retreating drive unit 632 moves the semicircular arc members 61, 62 in a direction approaching the other semicircular arc member in the horizontal plane, and the end faces in the circumferential direction of the semicircular arc members 61, 62 are mutually connected. A state where they come into contact with each other. As a result, the guard member 60, which is a ring-shaped member, is placed at the processing position (the state shown in FIG. 4).

<Heat treatment part 7>
The heat treatment unit 7 heats the substrate 9 by supplying steam (water vapor), particularly preferably superheated steam (superheated water vapor), to the back surface 92 of the substrate 9 held on the spin base 21.

  The heat treatment unit 7 includes a steam nozzle 71 that discharges steam toward the back surface 92 of the substrate 9 held on the spin base 21. The steam nozzle 71 is disposed on the spin base 21. A plurality of steam discharge ports (not shown) are formed on the upper surface side of the steam nozzle 71. At least one steam discharge port among the plurality of steam discharge ports is formed at a position where steam is selectively supplied to the back surface peripheral portion 921 of the substrate 9 held on the spin base 21. . More preferably, it is formed at a position facing the rear surface peripheral edge portion 921. Further, a larger amount of steam can be discharged from the steam discharge port than other steam discharge ports. With this configuration, the steam nozzle 71 can discharge steam mainly on the back surface 92 of the substrate 9, particularly toward the back surface peripheral portion 921.

  The steam nozzle 71 is connected to a steam supply unit 72 which is a piping system for supplying steam thereto. Specifically, the steam supply unit 72 has a configuration in which, for example, a steam supply source 721 that is a supply source for supplying steam is connected to the steam nozzle 71 via a pipe 722 in which an on-off valve 723 is inserted. I have. In this configuration, when the on-off valve 723 is opened, steam supplied from the steam supply source 721 is discharged from the steam nozzle 71.

  The steam discharged from the steam nozzle 71 is preferably superheated steam (superheated steam) heated (superheated) to a sufficiently high temperature (for example, 100 ° C. or higher and 130 ° C. or lower). For this purpose, for example, the steam supply source 721 is provided in the middle of the route of the supply source for supplying steam (water vapor) generated by heating pure water or the like, the pipe connected thereto, and the pipe. What is necessary is just to comprise including the heater inserted (all are abbreviate | omitting illustration). In this case, the steam supplied from the supply source takes into account the temperature drop when passing through the piping or the like, and the heater heats the steam supplied from the supply source to, for example, about 140 ° C. to 160 ° C. (overheating). It is preferable to do. However, even if a part of the steam (superheated steam) supplied to the substrate 9 is cooled by being deprived of heat by the substrate 9 and condensed on the substrate 9 to form water droplets, The centrifugal force accompanying the rotation causes the end surface 93 of the substrate 9 to be shaken out of the substrate 9. Accordingly, water droplets do not adhere to the device region 90.

  When steam is supplied from the steam supply unit 72 to the steam nozzle 71, steam is discharged from the steam nozzle 71 toward the back surface 92 of the substrate 9 held on the spin base 21, thereby heating the substrate 9. Will be. As described above, the steam nozzle 71 according to this embodiment can discharge steam intensively toward the back surface peripheral portion 921, so that the back surface peripheral portion 921 can be heated particularly intensively. However, the on-off valve 723 of the steam supply unit 72 is electrically connected to the control unit 130 and is opened and closed under the control of the control unit 130. That is, the discharge mode of the steam from the steam nozzle 71 (specifically, the discharge start timing, the discharge end timing, the discharge flow rate, etc.) is controlled by the control unit 130.

<Back treatment section 8>
The back surface processing unit 8 performs processing on the back surface 92 of the substrate 9 held on the spin base 21. Specifically, the back surface processing unit 8 supplies the processing liquid to the back surface 92 of the substrate 9 held on the spin base 21.

  The back surface processing unit 8 includes a supply pipe 81 disposed so as to penetrate through the hollow portion of the rotating shaft portion 22 of the spin chuck 2. The distal end of the supply pipe 81 is opened on the upper surface of the spin base 21, and this opening forms a rear surface side discharge port 82.

  The supply pipe 81 is connected to a treatment liquid supply unit 83 which is a piping system for supplying a treatment liquid thereto. Specifically, the processing liquid supply unit 83 includes an SC-1 supply source 831a, a DHF supply source 831b, an SC-2 supply source 831c, a rinse liquid supply source 831d, a plurality of pipes 832a, 832b, 832c, 832d, and A plurality of on-off valves 833a, 833b, 833c, and 833d are combined.

  The SC-1 supply source 831a is a supply source that supplies SC-1. The SC-1 supply source 831a is connected to the supply pipe 81 via a pipe 832a in which an on-off valve 833a is inserted. Therefore, when the on-off valve 833a is opened, SC-1 supplied from the SC-1 supply source 831a is discharged from the back side discharge port 82.

  The DHF supply source 831b is a supply source that supplies DHF. The DHF supply source 831b is connected to the supply pipe 81 via a pipe 832b in which an on-off valve 833b is inserted. Therefore, when the on-off valve 833b is opened, DHF supplied from the DHF supply source 831b is discharged from the rear surface side discharge port 82.

  The SC-2 supply source 831c is a supply source that supplies SC-2. The SC-2 supply source 831c is connected to the supply pipe 81 via a pipe 832c in which an on-off valve 833c is inserted. Therefore, when the on-off valve 833c is opened, SC-2 supplied from the SC-2 supply source 831c is discharged from the back side discharge port 82.

The rinse liquid supply source 831d is a supply source that supplies a rinse liquid. Here, the rinse liquid supply source 831d supplies, for example, pure water (carbonated water) in which carbon dioxide (CO ₂ ) is melted as a rinse liquid. The rinse liquid supply source 831d is connected to the supply pipe 81 via a pipe 832d in which an on-off valve 833d is inserted. Therefore, when the on-off valve 833d is opened, the rinsing liquid supplied from the rinsing liquid supply source 831d is discharged from the rear surface side discharge port 82. Note that pure water, warm water, ozone water, magnetic water, reduced water (hydrogen water), various organic solvents (ion water, IPA (isopropyl alcohol), functional water, and the like) may be used as the rinse liquid.

  When the processing liquid (SC-1, DHF, SC-2, or rinsing liquid) is supplied from the processing liquid supply unit 83 to the supply pipe 81, the substrate held on the spin base 21 from the rear surface side discharge port 82. The processing liquid is discharged toward the vicinity of the center of the back surface 92 of N. However, each of the on-off valves 833a, 833b, 833c, and 833d provided in the processing liquid supply unit 83 is electrically connected to the control unit 130 and is opened and closed under the control of the control unit 130. In other words, the control unit 130 controls the discharge mode of the processing liquid from the back-side discharge port 82 (specifically, the type of processing liquid to be discharged, the discharge start timing, the discharge end timing, the discharge flow rate, etc.). .

<4. Edge processing unit 5>
<4-1. Overall configuration>
The overall configuration of the peripheral edge processing unit 5 will be described with reference to FIGS.

  The peripheral processing unit 5 includes a peripheral processing head 51 that performs processing on the surface peripheral portion 911 of the substrate 9 held on the spin base 21. The peripheral edge processing head 51 is attached to the tip of an arm 52 extending horizontally. Further, the base end portion of the arm 52 is connected to the nozzle base 53. The nozzle base 53 is arranged in such a posture that its axis is along the vertical direction, and the base end portion of the arm 52 is connected to the upper end of the nozzle base 53.

  The nozzle base 53 is provided with a driving unit 54 that drives the peripheral processing head 51. The drive unit 54 includes, for example, a rotation drive unit (for example, a servo motor) that rotates the nozzle base 53 around its axis, and a lift drive unit (for example, a stepping motor) that expands and contracts the nozzle base 53 along its axis. And comprising. When the drive unit 54 rotates the nozzle base 53, the peripheral portion processing head 51 moves along an arc orbit in the horizontal plane, and when the drive unit 54 expands and contracts the nozzle base 53, the peripheral portion processing is performed. The head 51 moves in a direction to approach and separate from the substrate 9.

  The peripheral edge processing head 51 is moved between the processing position and the retracted position under the drive of the drive unit 54. Here, the processing position of the peripheral portion processing head 51 is above the substrate 9 held on the spin base 21 and is close to the surface peripheral portion 911 in a non-contact state while facing the surface peripheral portion 911. Position (position shown in FIG. 4). However, in a state in which the peripheral portion processing head 51 is disposed at the processing position, at least a part of the peripheral portion processing head 51 is accommodated in a notch 605 formed on an inner peripheral wall of a guard member 60 described later. It becomes. On the other hand, the retracted position of the processing head 51 for the peripheral edge is a position that does not interfere with the transport path of the substrate 9 and is, for example, a position outside the upper edge 301 of the cup 31 when viewed from above (see FIG. 3). Position shown). The drive unit 54 is electrically connected to the control unit 130 and operates under the control of the control unit 130. That is, the position of the peripheral edge processing head 51 is controlled by the control unit 130.

<4-2. Peripheral processing head 51>
Next, the peripheral portion processing head 51 will be described with reference to FIGS. FIG. 6 is a perspective view of the peripheral edge processing head 51. For convenience of explanation, the guard member 60 and the cup 31 are not shown in FIG.

  The peripheral portion processing head 51 includes a configuration for discharging fluid (processing liquid and gas) toward the surface peripheral portion 911 and a configuration for sucking the processing liquid on the surface peripheral portion 911.

<4-2-1. Configuration related to fluid discharge>
<I. Discharge nozzles 501a to 501d>
The peripheral portion processing head 51 includes a plurality of (here, four) discharge nozzles 501a to 501d that discharge fluid toward the surface peripheral portion 911. The group of discharge nozzles 501a to 501d included in the peripheral portion processing head 51 includes one or more (here, three) discharge nozzles (hereinafter, “processing liquid nozzles”) that discharge the processing liquid toward the surface peripheral portion 911. 501a, 501b, and 501c, and a discharge nozzle (hereinafter, also referred to as “gas nozzle”) 501d that discharges gas (here, nitrogen gas) toward the surface peripheral edge portion 911. In particular, the peripheral portion processing head 51 includes, as processing liquid nozzles 501a, 501b, and 501c, two discharge nozzles (hereinafter, also referred to as “chemical liquid nozzles”) 501a and 501b, and discharges that discharge a rinse liquid. A nozzle (hereinafter also referred to as “rinsing liquid nozzle”) 501c. In particular, the peripheral portion processing head 51 includes, as chemical nozzles 501a and 501b, a discharge nozzle that discharges acidic chemical liquid (hereinafter also referred to as “first chemical liquid nozzle”) 501a and a discharge nozzle that discharges alkaline chemical liquid (hereinafter referred to as “chemical liquid nozzle”). 501b) (also referred to as “second chemical nozzle”).

<Ii. Fluid Supply Unit 55>
The peripheral portion processing head 51 is a fluid supply that is a piping system that supplies a predetermined fluid (specifically, a predetermined processing liquid or gas) to each of a group of discharge nozzles 501a to 501d included in the peripheral portion processing head 51. The unit 55 is connected.

  Specifically, the fluid supply unit 55 includes, for example, an acid chemical solution supply source 551a, an alkaline chemical solution supply source 551b, a rinse solution supply source 551c, a nitrogen gas supply source 551d, a plurality of pipes 552a, 552b, 552c, and 552d, A plurality of on-off valves 553a, 553b, 553c, and 553d are combined.

The acidic chemical solution supply source 551a is a supply source that supplies an acidic chemical solution. Here, the acid chemical solution supply source 551a includes, for example, diluted hydrofluoric acid (dilute hydrofluoric acid) (hereinafter referred to as “DHF”), hydrochloric acid hydrogen peroxide (that is, hydrochloric acid (HCl) and peroxide). Hydrogen (H ₂ O ₂ ) and pure water (DIW: deionized water) is a chemical solution mixed at a predetermined ratio and can be selectively supplied. . The acid chemical solution supply source 551a is connected to the first chemical solution nozzle 501a via a pipe 552a in which an on-off valve 553a is inserted. Therefore, when the on-off valve 553a is opened, the acidic chemical solution (DHF or SC-2) supplied from the acid chemical solution supply source 551a is discharged from the first chemical solution nozzle 501a. However, the acid chemical solution supply source 551a is not necessarily limited to selectively supplying DHF and SC-2. For example, the acid chemical solution supply source 551a includes DHF, SC-2, BDHF (buffered hydrofluoric acid), HF (hydrofluoric acid), hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, oxalic acid, and a mixed solution thereof. Or at least one of them may be supplied.

The alkaline chemical solution supply source 551b is a supply source that supplies an alkaline chemical solution. Here, the alkaline chemical solution supply source 551b includes, for example, ammonia hydrogen peroxide (that is, ammonium hydroxide (NH ₄ OH), hydrogen peroxide (H ₂ O ₂ ), and pure water at a predetermined ratio. It is a mixed chemical solution and can be supplied hereinafter as “SC-1”. The alkaline chemical solution supply source 551b is connected to the second chemical solution nozzle 501b through a pipe 552b in which an on-off valve 553b is inserted. Therefore, when the on-off valve 553b is opened, the alkaline chemical liquid (SC-1) supplied from the alkaline chemical liquid supply source 551b is discharged from the second chemical liquid nozzle 501b. In addition, it is also preferable that SC-1 supplied from the alkaline chemical supply source 551b is temperature-controlled at 60 ° C. to 80 ° C., for example. However, the alkaline chemical solution supply source 551b may supply a chemical solution other than SC-1 (for example, an aqueous solution of ammonia).

The rinse liquid supply source 551c is a supply source that supplies a rinse liquid. Here, the rinse liquid supply source 551c supplies, for example, pure water (carbonated water) in which carbon dioxide (CO ₂ ) is melted as a rinse liquid. The rinsing liquid supply source 551c is connected to the rinsing liquid nozzle 501c via a pipe 552c in which an on-off valve 553c is inserted. Therefore, when the on-off valve 553c is opened, the rinse liquid supplied from the rinse liquid supply source 551c is discharged from the rinse liquid nozzle 501c. Note that pure water, warm water, ozone water, magnetic water, reduced water (hydrogen water), various organic solvents (ion water, IPA (isopropyl alcohol), functional water, etc.) may be used as the rinse liquid.

The nitrogen gas supply source 551d is a supply source that supplies gas (here, nitrogen (N ₂ ) gas, for example). The nitrogen gas supply source 551d is connected to the gas nozzle 501d through a pipe 552d in which an on-off valve 553d is inserted. Therefore, when the on-off valve 553d is opened, nitrogen gas supplied from the nitrogen gas supply source 551d is discharged from the gas nozzle 501d. However, the nitrogen gas supply source 551d may supply a gas other than nitrogen gas (for example, various inert gases other than nitrogen gas, dry air, etc.).

  Each of the discharge nozzles 501a to 501d is a substrate on which a discharge port 515 (described later) formed at the tip of the discharge nozzle 501a to 501d is held on the spin base 21 in a state where the peripheral portion processing head 51 is disposed at the processing position. 9 is arranged at a position (discharging position) that faces the surface peripheral edge portion 911 in a non-contact state while facing. In this state, when the fluid supply unit 55 supplies fluid to the discharge nozzles 501a to 501d, the fluid is discharged toward the surface peripheral edge 911. For example, when the fluid supply unit 55 supplies an acidic chemical solution (DHF or SC-2) to the first chemical solution nozzle 501a, the acidic chemical solution is discharged from the first chemical solution nozzle 501a toward the surface peripheral portion 911. Is done. Further, when the fluid supply unit 55 supplies the alkaline chemical solution (SC-1) to the second chemical solution nozzle 501b, the alkaline chemical solution is discharged from the second chemical solution nozzle 501b toward the surface peripheral edge portion 911. Further, when the fluid supply unit 55 supplies the rinse liquid to the rinse liquid nozzle 501c, the rinse liquid is discharged from the rinse liquid nozzle 501c toward the surface peripheral edge portion 911. Further, when the fluid supply unit 55 supplies gas to the gas nozzle 501d, the gas is discharged from the gas nozzle 501d toward the surface peripheral portion 911.

  In addition, each of the on-off valves 553a, 553b, 553c, and 553d included in the fluid supply unit 55 is electrically connected to the control unit 130 and is opened and closed under the control of the control unit 130. That is, the discharge mode (specifically, the discharge start timing, the discharge end timing, the discharge flow rate, etc.) of the fluid from each of the discharge nozzles 501a to 501d is controlled by the control unit 130.

<Iii. Discharge nozzle 501>
Next, a specific configuration of each of the group of ejection nozzles 501a to 501d included in the peripheral edge processing head 51 will be described with reference to FIG. Each of the group of discharge nozzles 501a to 501d has substantially the same configuration, and hereinafter, when these discharge nozzles 501a to 501d are not distinguished, they are simply referred to as “discharge nozzles 501”. FIG. 7 is a side sectional view schematically showing a configuration near the tip of the discharge nozzle 501.

  The discharge nozzle 501 includes a nozzle main body 511 that has a long bar-like outer shape with a thin lower end. The nozzle body 511 is supported by a support 500 (described later) such that its axial direction is along the vertical direction and its lower surface (hereinafter also referred to as “ejection surface”) 512 is in a horizontal posture. Therefore, in a state where the peripheral portion processing head 51 is disposed at the processing position, the ejection surface 512 is in a non-contact state with the surface peripheral portion 911 in a posture parallel to the surface 91 of the substrate 9 held on the spin base 21. Close by. However, in this state, the separation distance m between the ejection surface 512 and the surface peripheral edge portion 911 is sufficiently small (for example, m = 1 mm).

  Inside the nozzle body portion 511, an introduction flow path portion 513 and a discharge flow path portion 514 communicating with the lower end thereof are formed. One of the pipes 552a, 552b, 552c, and 552d described above is connected to the upper end of the introduction flow path portion 513. In addition, the lower end of the discharge channel portion 514 communicates with the discharge port 515 opened in the discharge surface 512. The discharge port 515 is, for example, a circular through hole, and the diameter thereof is smaller than the minute width d from the end surface 93 of the substrate 9 in FIG. 2, for example, 0.6 mm. Therefore, the fluid supplied from the pipe is first held in the introduction flow path portion 513, flows into the discharge flow path portion 514, and is discharged from the discharge port 515.

  The discharge flow path part 514 has a shape bent in the middle. Specifically, the discharge flow path part 514 includes a vertical flow path part 5141 and an inclined flow path part 5142 connected to the vertical flow path part 5141. The vertical flow path portion 5141 extends in parallel with the axial direction of the nozzle main body 511 and communicates with the inclined flow path portion 5142 at the lower end. The inclined channel portion 5142 extends obliquely downward from the inner side of the substrate 9 (center side of the substrate 9) toward the outer side (end surface 93 side) as going downward, and communicates with the discharge port 515 at the lower end.

  In the discharge nozzle 501, the fluid is discharged from the discharge port 515 through the inclined flow path portion 5142 that extends obliquely, and thus the fluid discharged from the discharge nozzle 501 toward the surface peripheral portion 911 of the substrate 9. Can flow toward the outside of the substrate 9 at the surface peripheral edge portion 911. Therefore, for example, when the processing liquid is discharged from the processing liquid nozzles 501a, 501b, and 501c toward the surface peripheral edge portion 911, the processing liquid can be prevented from flowing into the device region 90, and at the surface peripheral edge portion 911, The position of the inner edge of the region where the processing liquid acts can be controlled with high accuracy. For example, when gas is discharged from the gas nozzle 501 d toward the surface peripheral edge 911, an air flow toward the outside of the substrate 9 can be formed in the surface peripheral edge 911. By this air flow, the processing liquid on the surface peripheral edge portion 911 and the mist of the processing liquid can be blown off to the outside of the substrate 9.

  In particular, the discharge nozzle 501 has an inclined flow path that is a part of the discharge flow path section 514 formed inside the nozzle main body section 511, rather than being supported by the support section 500 in an inclined posture. Portion 5142 is inclined. Assuming that the nozzle body itself is in an inclined posture while forming a flow channel extending straight along the axial direction inside the nozzle body, the discharge surface is inclined with respect to the horizontal plane. . In this case, a liquid pool is likely to occur near the lowermost end of the discharge surface, and this liquid pool may drop (drop) on the substrate 9. Such dripping of the processing liquid occurs on the substrate 9 at a position inside the position where the processing liquid is originally to be supplied (center side of the substrate 9), and is thus discharged from the gas nozzle 501d. It is difficult to remove even gas. On the other hand, according to the configuration in which a part of the discharge channel portion 514 formed inside the nozzle main body portion 511 is inclined instead of the nozzle main body portion 511, the discharge surface 512 can be placed in a horizontal posture. Such a drop in the treatment liquid is unlikely to occur.

  In order to improve the control accuracy of the width of the region where the treatment liquid acts (for example, the etching width where the chemical for etching acts), the angle (tilt angle) formed by the extending direction of the inclined channel portion 5142 with the horizontal plane θ is preferably 45 degrees or more, and more preferably 60 degrees or more.

<4-2-2. Configuration for suction of treatment liquid>
<I. Suction tube 502a, 502b>
Refer to FIGS. 5 and 6 again. The peripheral edge processing head 51 includes suction pipes 502 a and 502 b for sucking excess processing liquid on the surface peripheral edge 911. However, the “excess processing liquid” referred to here is an amount of processing liquid necessary and sufficient to perform a predetermined process on a predetermined region of the processing liquid supplied to the surface peripheral edge portion 911. The remainder of the processing solution after subtracting. That is, the suction pipes 502a and 502b suck out only the excess processing liquid while leaving a sufficient amount of processing liquid necessary for processing out of the processing liquid on the surface peripheral edge portion 911.

  Each of the suction pipes 502a and 502b is associated with one of the processing liquid nozzles 501a, 501b, and 501c, and sucks the processing liquid supplied from the corresponding processing liquid nozzle onto the surface peripheral edge 911. In this embodiment, the peripheral processing head 51 includes two suction pipes 502a and 502b. One suction pipe (hereinafter also referred to as “first suction pipe”) 502a is connected to the first chemical liquid nozzle 501a. Correspondingly, the chemical liquid discharged from the first chemical liquid nozzle 501a is sucked. The other suction pipe (hereinafter also referred to as “second suction pipe”) 502b is associated with the second chemical liquid nozzle 501b and sucks the chemical liquid discharged from the second chemical liquid nozzle 501b.

<Ii. Suction pressure forming unit 56>
The peripheral portion processing head 51 is connected to a suction pressure forming portion 56 that is a piping system that forms a negative pressure (suction pressure) in the hollow space of each of the plurality of suction pipes 502a and 502b provided therein.

  Specifically, the suction pressure forming unit 56 includes, for example, a configuration in which a suction source 561 is connected to the suction pipes 502a and 502b via a pipe 562 in which an on-off valve 563 is inserted. Specifically, the suction source 561 includes, for example, a pump that sucks and discharges the liquid (for example, a volumetric pump, a non-volumetric pump, and the like) and a recovery tank that recovers the liquid discharged from the pump. Consists of. In this configuration, when the on-off valve 563 is opened, a negative pressure (suction pressure) is formed in the hollow space of the suction tubes 502a and 502b, and the suction port 521 (described later) opens at the lower ends of the suction tubes 502a and 502b. Then, the processing liquid and the like are sucked. The sucked processing liquid is collected in a collection tank. However, the suction pressure forming unit 56 does not collect the suctioned processing liquid into the recovery tank, but directly discharges the processing liquid to an external drainage line, or serves as a processing liquid supply source included in the fluid supply unit 55. It may be configured to circulate.

  In a state in which the peripheral edge processing head 51 is disposed at the processing position, the suction pipes 502 a and 502 b each have a suction port 521 formed at the tip thereof and a peripheral edge of the surface of the substrate 9 held on the spin base 21. It arrange | positions in the position (suction position) which opposes the part 911, adjoining in the non-contact state. In this state, when the suction pressure forming unit 56 forms a negative pressure (suction pressure) in the hollow space of the suction pipes 502a and 502b, the processing liquid on the surface peripheral edge 911 passes through the suction port 521 and the suction pipe 502a. , 502b.

  However, the suction source 561 and the opening / closing valve 563 are electrically connected to the control unit 130 and are driven (or opened / closed) under the control of the control unit 130. That is, the control unit 130 controls the suction mode (specifically, the suction start timing, the suction end timing, the suction pressure (that is, the suction amount), etc.) of the processing liquid from the suction tubes 502a and 502b. However, the control unit 130 leaves a sufficient amount of processing liquid necessary for processing on the surface peripheral edge portion 911, and only the excess processing liquid exceeding the processing liquid is sucked from the suction pipes 502a and 502b. , 502b (specifically, the pump pressure of the suction source 561, etc.) is adjusted.

  In the substrate processing apparatus 1, the processing liquid nozzles 501 a, 501 b, and 501 c described above discharge the processing liquid toward the surface peripheral edge 911, thereby performing a predetermined process on the surface peripheral edge 911. However, the inner edge position of the region where the treatment liquid acts on the surface peripheral edge portion 911 needs to be controlled with high accuracy. In particular, the inner edge position of the region where the chemical solution (for example, the chemical solution for etching) acts on the surface peripheral edge portion 911 needs to be controlled with particularly high accuracy. However, if a larger amount of processing liquid than the necessary and sufficient amount for processing is supplied from the processing liquid nozzles 501 a, 501 b, and 501 c to the surface peripheral edge portion 911, excess processing liquid on the surface peripheral edge portion 911 is transferred to the substrate 9. The inner edge position may be shifted to the center side of the substrate 9 from the intended position. In the worst case, the processing liquid that has spread to the center side of the substrate 9 may enter the device region 90 and cause a defect in the device pattern.

  In the substrate processing apparatus 1, the excess processing liquid on the surface peripheral portion 911 is sucked into the suction pipes 502 a and 502 b provided in the peripheral portion processing head 51, so that the extra processing liquid is removed from the surface peripheral portion. 911 can be removed from above. Thereby, it is possible to suppress the excessive processing liquid on the surface peripheral edge portion 911 from spreading to the center side of the substrate 9. That is, it can suppress that the inner edge position of the area | region where the process liquid acts in the surface peripheral part 911 shift | deviates to the center side of the board | substrate 9 rather than the expected position. In addition, it is possible to avoid a situation in which the processing liquid that has spread to the center side of the substrate 9 enters the device region 90 and causes a defect in the device pattern.

  Furthermore, if there is an excess processing solution on the surface peripheral edge 911, the processing solution newly supplied to the surface may collide with the excess processing solution and jump and enter the device region 90. In some cases, the occurrence of such a situation can be suppressed by removing excess processing liquid from the peripheral surface portion 911.

<Iii. Suction tube 502a, 502b>
Next, a specific configuration of each of the suction tubes 502a and 502b included in the peripheral edge processing head 51 will be described with reference to FIG. The suction tubes 502a and 502b have substantially the same configuration. Hereinafter, when the suction tubes 502a and 502b are not distinguished from each other, they are simply referred to as “suction tubes 502”. FIG. 8 is a side sectional view schematically showing a configuration near the tip of the suction tube 502.

  The suction tube 502 has an elongated cylindrical outer shape and is hollow inside. The hollow space inside the suction pipe 502 communicates with the suction port 521 opened at the lower end of the suction pipe 502. However, the suction tube 502 may have a straight shape as illustrated, or may have a nozzle shape with a diameter reduced toward the tip.

  Here, the diameter of the suction port 521 provided in the suction pipe 502 is the area where the processing liquid is to act on the surface peripheral edge portion 911 (specifically, discharged from the processing liquid nozzles 501a and 501b associated with the suction pipe 502). This is a region where the processing liquid is to be applied and is smaller than a width T of “target processing region” hereinafter.

  Then, in a state where the suction tube 502 is disposed at the suction position, the end (inner end) 5211 on the center side of the substrate 9 at the suction port 521 is from the inner edge position (hereinafter referred to as “target inner edge position”) t of the target processing region. Is also on the end face 93 side of the substrate 9. According to this configuration, the suction pressure can be applied to the outer side (the end surface 93 side of the substrate 9) than the target inner edge position t, so that excess processing liquid spreads to the center side of the substrate 9 and protrudes from the target processing region. This can be suppressed.

  Further, in a state where the suction tube 502 is disposed at the suction position, the end (outer end) 5212 on the end surface 93 side of the substrate 9 in the suction port 521 is on the inner side (center side of the substrate 9) than the end surface 93 of the substrate 9. is there. According to this configuration, the suction pressure can be effectively applied to the processing liquid.

<4-2-3. Layout>
The peripheral portion processing head 51 includes a support portion 500 fixed to the arm 52 described above. The support unit 500 integrally supports the plurality of discharge nozzles 501a to 501d and the plurality of suction pipes 502a and 502b. The layout of the plurality of discharge nozzles 501a to 501d and the plurality of suction pipes 502a and 502b that are integrally supported will be described with reference to FIG.

<I. Layout of discharge nozzles 501a to 501d>
The support portion 500 is a member that is curved in an arc shape along the surface peripheral edge portion 911 when viewed from above, and the group of discharge nozzles 501a to 501d are arranged along the extending direction of the support portion 500 that is curved in an arc shape. ing. Accordingly, the group of ejection nozzles 501 a to 501 d are arranged along the surface peripheral edge 911 of the substrate 9 in a state where the peripheral edge processing head 51 is disposed at the processing position. At this time, the gas nozzle 501d, the first chemical liquid nozzle 501a, the rinse liquid nozzle 501c, and the second chemical liquid nozzle 501b are arranged in this order from the upstream side along the rotation direction AR9 of the substrate 9.

  In this manner, in the peripheral edge processing head 51, the gas nozzle 501d is disposed upstream of the processing liquid nozzles 501a, 501b, and 501c in the rotation direction AR9 of the substrate 9. Therefore, each position in the surface peripheral edge portion 911 of the substrate 9 to be rotated first passes below the gas nozzle 501d and then passes below the processing liquid nozzles 501a, 501b, and 501c. According to this configuration, before a new processing liquid is supplied from each of the processing liquid nozzles 501a, 501b, and 501c to each position in the surface peripheral edge portion 911 of the substrate 9 to be rotated, the gas nozzle 501d supplies the gas to that position. Can be supplied (ie, gas can be blown).

  Depending on the surface state or the like of the substrate 9, the substrate 9 is supplied to the respective positions in the surface peripheral portion 911 reaching the lower part of the peripheral portion processing head 51 from the processing liquid nozzles 501 a, 501 b, and 501 c one round before. There is a case in which an old processing liquid that has not been shaken off during the rotation is attached. Even in such a case, the peripheral portion processing head 51 supplies the new processing liquid from the processing liquid nozzles 501a, 501b, and 501c after removing the old processing liquid with the gas discharged from the gas nozzle 501d. be able to. According to this configuration, a situation in which the processing liquid newly supplied to each position in the surface peripheral edge portion 911 collides with the old processing liquid and jumps is unlikely to occur. Thereby, the processing liquid is prevented from entering the device region 90. Moreover, according to this structure, a fresh process liquid can always be made to act on the board | substrate 9, and, thereby, process efficiency can be improved. In addition, if a new processing solution is further supplied to the place where the old chemical solution remains, the amount of the processing solution held there temporarily increases, and the old chemical solution is removed with gas. If a new processing liquid is supplied later, a situation in which a large amount of processing liquid is temporarily held at each position in the surface peripheral edge portion 911 is unlikely to occur. Thereby, it is possible to suppress the amount of the processing liquid held at each position in the surface peripheral edge portion 911 from fluctuating with time. As a result, the inner edge position of the area where the processing liquid acts on the surface peripheral edge portion 911 can be controlled with high accuracy.

  From another point of view, in the peripheral portion processing head 51, the processing liquid nozzles 501a, 501b, and 501c are disposed downstream of the gas nozzle 501d in the rotation direction AR9 of the substrate 9. Therefore, each position in the surface peripheral edge portion 911 of the substrate 9 to be rotated passes below the processing liquid nozzles 501a, 501b, and 501c, and then reaches below the gas nozzle 501d after the substrate 9 is rotated substantially once. It will be. According to this configuration, at least a part of the processing liquid supplied from the processing liquid nozzles 501a, 501b, and 501c to each position on the surface peripheral edge 911 is placed on the surface peripheral edge 911 while the substrate 9 is rotated substantially once. Since it continues to stay, the processing liquid can sufficiently act on each position in the surface peripheral edge portion 911.

  In the peripheral portion processing head 51, a rinse liquid nozzle 501c for discharging a rinse liquid is provided between the first chemical liquid nozzle 501a for discharging an acidic chemical liquid and the second chemical liquid nozzle 501b for discharging an alkaline chemical liquid. Be placed. According to this configuration, for example, it is possible to suppress the occurrence of a situation in which the atmosphere generated when the chemical liquid is discharged from one chemical liquid nozzle reacts with the chemical liquid remaining in the other chemical liquid nozzle. Specifically, for example, the atmosphere generated when the first chemical liquid nozzle 501a discharges the acidic chemical liquid reacts with the alkaline chemical liquid remaining in the second chemical liquid nozzle 501b, or the second chemical liquid nozzle Generation | occurrence | production of the situation where the atmosphere generate | occur | produced when 501b discharges the alkaline chemical | medical solution reacts with the acidic chemical | medical solution remaining in the 1st chemical | medical solution nozzle 501a can be suppressed.

<Ii. Suction tube 502a, 502b layout>
The first suction pipe 502a is disposed in the vicinity of the first chemical liquid nozzle 501a, which is the corresponding processing liquid nozzle, and downstream of the first chemical liquid nozzle 501a in the rotation direction AR9 of the substrate 9. Further, the second suction pipe 502b is disposed in the vicinity of the second chemical liquid nozzle 501b, which is the corresponding processing liquid nozzle, and downstream of the second chemical liquid nozzle 501b in the rotation direction AR9 of the substrate 9. However, the “near” here refers to the angle (or the second angle) formed by the first suction tube 502a and the first chemical liquid nozzle 501a when viewed from the center of the substrate 9 (that is, the rotation axis A of the spin base 21). This means that the angle formed by the suction pipe 502b and the second chemical liquid nozzle 501b is 10 ° or less, particularly preferably 5 ° or less.

  However, the first suction pipe 502a is disposed downstream of the first chemical nozzle 501a in the rotational direction AR9 of the substrate 9 and upstream of the rinse liquid nozzle 501c in the rotational direction AR9 of the substrate 9 ( That is, it is preferable that the first chemical liquid nozzle 501a and the rinsing liquid nozzle 501c are disposed when viewed from the center of the substrate 9.

  As described above, in the peripheral edge processing head 51, the respective suction pipes 502a and 502b are disposed in the vicinity of the corresponding processing liquid nozzle and downstream of the processing liquid nozzle in the rotation direction AR9 of the substrate 9. The Therefore, each position in the surface peripheral edge portion 911 of the substrate 9 to be rotated passes under the suction pipes 502a and 502b corresponding to the chemical nozzles 501a and 501b immediately after passing under the chemical nozzles 501a and 501b. Will do. According to this configuration, immediately after a new chemical solution is supplied from each of the chemical nozzles 501a and 501b to each position in the surface peripheral edge portion 911 of the substrate 9 to be rotated, the extra chemical solution supplied to the position is It can suck | inhale from the suction pipes 502a and 502b corresponding to the chemical | medical solution nozzles 501a and 501b. Thereby, the quantity of the chemical | medical solution hold | maintained at each position in the surface peripheral part 911 can always be kept at the necessary and sufficient quantity. As a result, the inner edge position of the area where the processing liquid acts on the surface peripheral edge portion 911 can be controlled with high accuracy.

<4-2-4. Discharge position and suction position>
Now, the arrival position at which the fluid is discharged from each of the plurality of discharge nozzles 501a to 501d included in the peripheral portion processing head 51 and reaches the substrate 9 is referred to as “target discharge position” of the discharge nozzles 501a to 501d. To. In addition, each of the plurality of suction pipes 502a and 502b included in the peripheral portion processing head 51 is processed by a processing liquid (specifically, processing discharged from the processing liquid nozzles 501a and 501b associated with the suction pipes 502a and 502b). The position on the substrate 9 where the liquid is sucked is referred to as “target suction position” of the suction pipes 502a and 502b. Hereinafter, the target discharge positions Qa to Qd of the plurality of discharge nozzles 501a to 501d and the target suction positions Ra and Rb of the plurality of suction pipes 502a and 502b will be described with reference to FIGS. FIG. 9 is a diagram schematically illustrating an arrangement example of the target discharge positions Qa to Qd and the target suction positions Ra and Rb. 10 and 11 are views of the peripheral edge processing head 51 as viewed from the downstream side in the rotation direction AR9 of the substrate 9. FIG. However, FIG. 10 shows a state where the chemical liquid and the gas are discharged from the peripheral portion processing head 51, and FIG. 11 shows that the rinse liquid and the gas are discharged from the peripheral portion processing head 51. The state is shown.

  The target discharge positions Qa to Qd of the plurality of discharge nozzles 501 a to 501 d are positions shifted from each other in the radial direction of the substrate 9. That is, the target discharge position Qd of the gas nozzle 501d is set on the inner side (center side) in the radial direction of the substrate 9 relative to the target discharge positions Qa, Qb, Qc of the processing liquid nozzles 501a, 501b, 501c. Further, the target discharge position Qc of the rinsing liquid nozzle 501c is set on the radially inner side of the substrate 9 relative to the target discharge positions Qa and Qb of the chemical liquid nozzles 501a and 501b. Further, the target discharge position Qa of the first chemical liquid nozzle 501a and the target discharge position Qb of the second chemical liquid nozzle 501b are the same position in the radial direction. However, “the same position in the radial direction” refers to a position where the distance from the end surface 93 of the substrate 9 is equal to each other (that is, a position where the distance from the center of the substrate 9 is equal). That is, here, the separation distance from the end surface 93 of the substrate 9 to the target discharge position Qa of the first chemical solution nozzle 501a and the separation distance from the end surface 93 of the substrate 9 to the target discharge position Qb of the second chemical solution nozzle 501b are: equal.

  On the other hand, the position (target suction position) Ra on the substrate 9 where the first suction pipe 502a sucks the chemical liquid discharged from the first chemical liquid nozzle 501a is higher than the target discharge position Qa of the first chemical liquid nozzle 501a. The outer side in the radial direction (end surface 93 side). That is, the first chemical liquid nozzle 501a discharges the chemical toward the first position (target discharge position Qa) on the substrate 9, and the first suction pipe 502a has the end face 93 of the substrate 9 beyond the target discharge position Qa. The chemical solution is sucked from the second position (target suction position Ra) on the side.

  Similarly, the position (target suction position) Rb on the substrate 9 where the second suction pipe 502b sucks the chemical liquid discharged from the second chemical liquid nozzle 501b is closer to the substrate than the target discharge position Qb of the second chemical liquid nozzle 501b. 9 is the radially outer side (end face 93 side). That is, the second chemical liquid nozzle 501b discharges the chemical liquid toward the first position (target discharge position Qb) on the substrate 9, and the second suction pipe 502b has the end surface 93 of the substrate 9 beyond the target discharge position Qb. The chemical solution is sucked from the second position (target suction position Rb) on the side.

  As described above, each of the suction pipes 502a and 502b is disposed on the downstream side in the rotation direction AR9 of the substrate 9 with respect to the corresponding processing liquid nozzle. Accordingly, the target suction position Ra of the first suction pipe 502a is located downstream of the target discharge position Qa of the first chemical liquid nozzle 501a in the rotation direction AR9 of the substrate 9, and the target suction position Rb of the second suction pipe 502b is It is on the downstream side in the rotation direction AR9 of the substrate 9 with respect to the target discharge position Qb of the second chemical liquid nozzle 501b.

  As an example, the target discharge position Qa of the first chemical liquid nozzle 501 a and the target discharge position Qb of the second chemical liquid nozzle 501 b are both positions that are 1.0 mm inside from the end surface 93 of the substrate 9. The target suction position Ra of the first suction pipe 502a and the target suction position Rb of the second suction pipe 502b are both positions within the range of 0 mm to 1.0 mm from the end surface 93 of the substrate 9. The target discharge position Qd of the gas nozzle 501d is further 0.5 mm inside the substrate 9 than the target discharge positions Qa and Qb of the chemical liquid nozzles 501a and 501b (or the target suction positions Ra and Rb of the suction pipes 502a and 502b). Is the position. The target discharge position Qc of the rinsing liquid nozzle 501c is a position within the range of 1.0 mm to 0.5 mm from the end surface 93 of the substrate 9.

  Each of the discharge nozzles 501a to 501d and each of the suction pipes 502a and 502b can discharge fluid so as to reach the respective target discharge positions Qa, Qb, Qc, and Qd, and from each target suction position Ra and Rb. In order to be able to suck the treatment liquid, the substrate 9 is arranged at a position shifted from each other in the radial direction of the substrate 9 and supported by the support portion 500. That is, the gas nozzle 501d is arranged on the inner side (center side) in the radial direction of the substrate 9 than the processing liquid nozzles 501a, 501b, and 501c, and is supported by the support unit 500. Further, the rinsing liquid nozzle 501c is disposed on the radially inner side of the substrate 9 with respect to the chemical liquid nozzles 501a and 501b and is supported by the support portion 500. Further, the first chemical liquid nozzle 501 a and the second chemical liquid nozzle 501 b are arranged at the same position in the radial direction and supported by the support portion 500. It should be noted that the amount of mutual displacement in the arrangement of the nozzles 501a, 501b, 501c, 501d reaches the target discharge positions Qa, Qb, Qc, Qd according to the angle of the inclined flow path portion 5042 described above. Is set to The suction pipes 502a and 502b are disposed on the outer side in the radial direction of the substrate 9 (on the end face 93 side) than the corresponding chemical liquid nozzles 501a and 501b, and are supported by the support unit 500.

  In the peripheral portion processing head 51, the target discharge position Qd of the gas nozzle 501d is located radially inward of the substrate 9 relative to the target discharge positions Qa, Qb, Qc of the processing liquid nozzles 501a, 501b, 501c. In the surface peripheral edge portion 911 of FIG. 9, the gas is supplied to a position inside the position where the processing liquid is discharged. According to this configuration, the processing liquid supplied to the surface peripheral edge portion 911 can be removed by gas from the inside to the outside of the substrate 9. Accordingly, the processing liquid on the surface peripheral edge portion 911 can be prevented from entering the device region 90, and the width of the area where the processing liquid acts (for example, the width of the area where the etching chemical liquid acts (etching width)). The control accuracy can be increased.

  Further, in the peripheral edge processing head 51, the target discharge position Qc of the rinsing liquid nozzle 501c is set radially inward of the substrate 9 relative to the target discharge positions Qa and Qb of the chemical liquid nozzles 501a and 501b. In the surface peripheral edge portion 911, the rinse liquid is discharged to a position inside the position where the chemical liquid is discharged. According to this configuration, the chemical liquid supplied to the surface peripheral edge portion 911 can be pushed away by the rinse liquid from the inside to the outside of the substrate 9. Accordingly, the chemical solution can be sufficiently rinsed away without leaving a chemical solution residue while sufficiently suppressing the chemical solution from entering the device region 90.

  Further, in the peripheral portion processing head 51, the target discharge position Qa of the first chemical liquid nozzle 501a and the target discharge position Qb of the second chemical liquid nozzle 501b are set to the same position in the radial direction of the substrate 9. In the surface peripheral edge portion 911, the alkaline chemical liquid can be discharged to the position where the acidic chemical liquid is discharged. According to this structure, each chemical | medical solution can be made to act correctly on the same area | region.

  In the peripheral portion processing head 51, the target suction positions Ra and Rb of the suction pipes 502a and 502b are more than the target discharge positions Qa and Qb of the processing liquid nozzles 501a and 501b corresponding to the suction pipes 502a and 502b. , The end surface 93 side of the substrate 9. That is, in the surface peripheral edge portion 911 of the substrate 9, excess processing liquid is sucked at a position closer to the end surface 93 of the substrate 9 than the position where the processing liquid is discharged. According to this configuration, excess processing liquid on the surface peripheral edge portion 911 flows from the inside to the outside of the substrate 9 and is sucked from the suction pipes 502a and 502b. Spreading toward the center side of the substrate 9 can be sufficiently suppressed.

<5. Operation of Substrate Processing Apparatus 1>
Next, the operation of the substrate processing apparatus 1 will be described. In the substrate processing apparatus 1, a series of processes described below are executed under the control of the control unit 130. However, what is described below is only an example of processing that can be executed by the substrate processing apparatus 1.

  In the substrate processing apparatus 1, for example, for one substrate 9, pre-processing (step S1), front surface peripheral processing (step S2), processing surface switching processing (step S3), back surface processing (step S4), and The drying process (step S5) is performed in this order (FIG. 12). Below, each process is demonstrated concretely.

<5-1. Pretreatment>
The preprocessing (step S1) will be described with reference to FIGS. FIG. 13 is a diagram showing the flow of preprocessing. FIG. 14 is a diagram for explaining the preprocessing, and schematically shows some elements of the substrate processing apparatus 1 in a state in which each processing step in the preprocessing is executed.

  First, in a state in which the semicircular arc members 61 and 62, the cup 31, the peripheral edge processing head 51, and the cover gas nozzle 41 are disposed at the respective retreat positions, the transfer robot CR causes the substrate 9 to move to the surface 91 thereof. Is placed on the spin base 21 in a posture facing upward. The substrate 9 disposed on the spin base 21 is held by the group of holding members 25 (step S101). As a result, the substrate 9 is held in a substantially horizontal position on the spin base 21.

  When the substrate 9 is held on the spin base 21, the guard member 60 is moved to the processing position (step S102). Specifically, the elevating drive unit 631 of the semicircular member driving unit 63 raises the semicircular members 61 and 62 arranged at the retracted position to a position slightly above the upper surface of the spin base 21, Subsequently, the advancing / retreating drive unit 632 of the semicircular arc member driving unit 63 moves each semicircular arc member 61, 62 in a direction approaching the other semicircular arc member in the horizontal plane, so that the circumference of each semicircular arc member 61, 62 is increased. End surfaces in the direction are in contact with each other. As a result, the guard member 60, which is a ring-shaped member, is placed at the processing position. Note that the guard member 60 arranged at the processing position remains stationary without being rotated even when the spin base 21 starts to rotate.

  When the guard member 60 is disposed at the processing position, the cup 31 disposed at the retreat position is subsequently raised and disposed at the processing position (step S103). As a result, the cup 31 is arranged so as to surround the substrate 9 and the guard member 60 held on the spin base 21 together.

  When the cup 31 is disposed at the processing position, the cover gas nozzle 41 is subsequently moved from the retracted position to the processing position. Then, the cover gas is started to be discharged from the cover gas nozzle 41 arranged at the processing position toward the center of the surface 91 of the substrate 9 (step S104). The supply of the cover gas started near the center of the surface 91 of the substrate 9 is continued until the processing on the substrate 9 is completed. By continuously supplying the cover gas near the center of the surface 91 of the substrate 9, the device region 90 is exposed to the atmosphere of the processing liquid supplied to the surface peripheral portion 911 and the like while the processing on the substrate 9 is performed. There is nothing to do. That is, the device region 90 continues to be protected from the atmosphere of the processing liquid supplied to the surface peripheral portion.

  Here, discharge of the cover gas from the cover gas nozzle 41 is started after the cup 31 is arranged at the processing position. If the discharge of the cover gas from the cover gas nozzle 41 is started without waiting for the cup 31 to be raised to the processing position, the airflow in the vicinity of the surface peripheral edge portion 911 of the substrate 9 is disturbed and rolled up. Thus, if there is a possibility that particles or the like may adhere to the substrate 9, such a situation can be avoided if discharge of the cover gas is started after the cup 31 is placed at the processing position.

  Subsequently, the rotation of the spin base 21 is started, whereby the substrate 9 held on the spin base 21 is started to rotate in a horizontal posture (step S105). At this time, the rotation speed of the spin base 21 (that is, the rotation speed of the substrate 9) is, for example, 600 rpm. The rotation speed is such that the processing liquid supplied to the surface peripheral edge portion 911 does not enter the device region 90 and does not move to the end portion 93 side during the surface peripheral edge processing. The number is appropriately set (that is, the number of rotations at which the processing liquid is stably held in the region in the surface peripheral portion 911 to be processed).

  Subsequently, steam is discharged from the steam nozzle 71 toward the back surface 92 of the rotated substrate 9 (press team) (step S106). When a predetermined time (for example, 5 seconds) elapses after the steam starts to be discharged, the discharge of the steam from the steam nozzle 71 is stopped. The substrate 9 is heated by this press team. Most of the chemicals used for the chemical treatment on the substrate 9 are chemicals whose reaction is accelerated as the temperature rises. However, the substrate 9 is heated in advance by the press team, so that the chemical solution and the substrate 9 in the chemical treatment are used. Reaction with is promoted. As a result, the treatment time of the chemical solution is shortened and the amount of the chemical solution used is suppressed.

<5-2. Surface edge treatment>
When the preprocessing (step S1) is completed, the surface peripheral processing (step S2) is subsequently performed. The surface edge processing will be described with reference to FIGS. 15 and 16. FIG. 15 is a diagram illustrating the flow of the surface peripheral edge processing. FIG. 16 is a diagram for explaining the surface periphery processing, and schematically shows some elements of the substrate processing apparatus 1 in a state in which each processing step in the surface periphery processing is executed.

  However, the substrate 9 continues to be rotated at a constant rotation speed (for example, 600 rpm) while the surface edge processing described below is performed. Further, as described above, the cover gas is continuously supplied from the cover gas nozzle 41 toward the vicinity of the center of the surface 91 of the substrate 9 while the surface peripheral edge processing is performed. It is protected from the atmosphere of the processing liquid supplied to the section 911.

<Alkali treatment (SC-1)>
<I. Chemical treatment>
First, the chemical liquid processing by SC-1 is performed on the surface peripheral edge portion 911 of the substrate 9 (step S201). Specifically, the peripheral edge processing head 51 is first moved from the retracted position to the processing position. Then, SC-1 is discharged from the second chemical solution nozzle 501b of the peripheral portion processing head 51 arranged at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated. The discharge flow rate of SC-1 at this time is, for example, 20 (mL / min) or more and 50 (mL / min) or less. When a predetermined time (for example, 20 seconds) elapses after SC-1 is started to be discharged, the discharge of SC-1 from the peripheral portion processing head 51 is stopped.

  By this chemical processing, the thin film formed on the surface peripheral portion 911 of the substrate 9 is removed (etching processing). However, while this chemical treatment is being performed, the second suction pipe 502b is disposed on the surface peripheral portion 911 in parallel with the second chemical solution nozzle 501b discharging SC-1 toward the surface peripheral portion 911. The SC-1 is sucked. That is, simultaneously with the start of SC-1 discharge from the second chemical nozzle 501b toward the surface peripheral edge 911, suction from the second suction pipe 502b is started, and the surface peripheral edge 911 from the second chemical nozzle 501b is started. The suction from the second suction pipe 502b is stopped simultaneously with the stop of the discharge of SC-1 toward the head. Thereby, it is possible to suppress the excessive SC-1 supplied to the surface peripheral edge portion 911 from spreading to the center side of the substrate 9.

  Further, steam is discharged from the steam nozzle 71 toward the back surface 92 of the substrate 9 while this chemical treatment is being performed. The discharge flow rate of steam at this time is, for example, 500 (mL / min) or more and 2000 (mL / min) or less. Moreover, the temperature of the discharged steam is, for example, 110 ° C. or more and 130 ° C. or less. SC-1 is a chemical solution whose reaction is accelerated as the temperature rises, and the substrate 9 to be treated with the chemical solution by SC-1 is heated by being supplied with steam, whereby the surface peripheral portion 911 of the substrate 9 is heated. And SC-1 are promoted (that is, the etching rate is increased) (so-called heat assist). As a result, the processing time of the chemical solution processing by SC-1 is shortened, and the usage amount of SC-1 is suppressed. In particular, here, since the back surface peripheral portion 921 of the substrate 9 is heated preferentially, the reaction between the front surface peripheral portion 911 and SC-1 can be effectively promoted.

<Ii. Rinse processing>
Subsequently, a rinsing process is performed (step S202). Specifically, the rinsing liquid is discharged from the rinsing liquid nozzle 501c of the peripheral portion processing head 51 arranged at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated. When a predetermined time (for example, 5 seconds) has elapsed since the start of the discharge of the rinse liquid, the discharge of the rinse liquid from the peripheral portion processing head 51 is stopped. By this rinsing treatment, the treatment liquid (here, SC-1) adhering to the peripheral surface portion 911 is rinsed away.

<Iii. Liquid shaking off process>
Subsequently, a liquid swing-off process is performed (step S203). In the liquid shaking-off process, the processing liquid remaining in the surface peripheral edge portion 911 (here, the rinse liquid remaining in the surface peripheral edge portion 911 without being shaken off from the substrate 9 in the rinsing process in step S202) is removed. In this process, the end surface 93 is moved away from the substrate 9 toward the end surface 93 side. The processing liquid brought close to the end surface 93 side is held in the end surface 93 and the non-horizontal surface region portion in the vicinity thereof, and the processing liquid held in the non-horizontal surface region portion is unlikely to cause liquid breakage. Therefore, such processing liquids are gathered together and shaken out of the substrate 9. That is, the processing liquid remaining on the surface peripheral edge portion 911 is moved to the end surface 93 side of the substrate 9 and then shaken out of the substrate 9, so that the liquid remaining in the surface peripheral edge portion 911 is hardly generated. Most of the processing liquid that is being processed can be removed from the substrate 9.

  Specifically, the liquid shaking-off process is performed as follows, for example. First, the substrate 9 is rotated for a predetermined time in a state where the discharge of the fluid (processing liquid and gas) from the peripheral portion processing head 51 toward the surface peripheral portion 911 is stopped (liquid feeding step). (Step S2031). As a result, the processing liquid remaining on the surface peripheral edge portion 911 receives a centrifugal force accompanying the rotation of the substrate 9 and moves in a direction approaching the end surface 93 of the substrate 9, so that the end surface 93 and the non-horizontal area in the vicinity thereof are moved. It will be in the state held by the surface area portion. Subsequently, gas is discharged from the gas nozzle 501d of the peripheral portion processing head 51 arranged at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated (blowing process) (step S2032). The gas discharge flow rate at this time is, for example, 14 (L / min). As a result, the processing liquid held in the non-horizontal surface region portion receives the gas wind pressure and the centrifugal force accompanying the rotation of the substrate 9, and is swung out of the substrate 9 together. When a predetermined time (for example, 15 seconds) elapses after gas discharge from the peripheral processing head 51 is started, gas discharge from the peripheral processing head 51 is stopped.

  By this liquid swing-off process, most of the processing liquid remaining on the surface peripheral edge portion 911 (that is, the rinse liquid remaining on the surface peripheral edge portion 911 without being shaken off from the substrate 9 in the rinse process of step S202) It is shaken off from 9.

<First acid treatment (SC-2)>
<I. Chemical treatment>
Next, the chemical liquid process by SC-2 is performed with respect to the surface peripheral part 911 of the board | substrate 9 (step S204). Specifically, SC-2 is discharged from the first chemical solution nozzle 501a of the peripheral portion processing head 51 arranged at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated. When a predetermined time (for example, 20 seconds) elapses after the SC-2 is started to be discharged, the discharge of the SC-2 from the peripheral portion processing head 51 is stopped.

  By this chemical treatment, metal components (for example, Mo, Co, etc.) adhering to the surface peripheral portion 911 of the substrate 9 are removed (cleaning treatment). However, here, the liquid swing-off process is performed prior to the chemical process (step S203). For this reason, SC-2 is discharged toward the surface periphery 911 where almost no rinsing liquid remains. Assuming that the liquid swing-off process in step S203 is not performed, SC-2 is discharged toward the surface peripheral edge 911 where the rinse liquid remains, and the discharged SC-2 is There is a possibility that the remaining rinsing liquid may collide and jump and enter the device region 90. However, here, since the surface peripheral edge portion 911 is in a state in which almost no rinsing liquid remains by the liquid swing-off process, the processing liquid enters the device region 90 due to such collision of the processing liquid. Hateful. Further, if the liquid swing-off process in step S203 is not performed, the remaining rinse liquid and the supplied SC-2 may be mixed on the surface peripheral edge portion 911. Such a situation is unlikely to occur when processing is being performed. As a result, the desired concentration of SC-2 can be appropriately applied to the surface peripheral edge portion 911. Moreover, the contact with the rinse liquid which rinsed away SC-1 which is an alkaline chemical | medical solution, and SC-2 which is an acidic chemical | medical solution can also be avoided.

  In addition, while this chemical treatment is being performed, the first suction pipe 502a is disposed on the surface peripheral portion 911 in parallel with the first chemical solution nozzle 501a discharging SC-2 toward the surface peripheral portion 911. Suction SC-2. That is, simultaneously with the start of SC-1 discharge from the first chemical nozzle 501a toward the surface peripheral portion 911, suction from the first suction pipe 502a is started, and the surface peripheral portion 911 from the first chemical nozzle 501a. The suction from the first suction pipe 502a is stopped at the same time as the SC-2 discharge is stopped. Thereby, it is possible to suppress the excessive SC-2 supplied to the surface peripheral edge portion 911 from spreading to the center side of the substrate 9.

<Ii. Liquid shaking off process>
Subsequently, a liquid swing-off process is performed (step S205). The specific flow of the liquid swing-off process is as described in step S203. That is, first, the substrate 9 is rotated for a predetermined time in a state where the discharge of the fluid toward the surface peripheral portion 911 is stopped (liquid feeding step), and thereafter, for the peripheral portion disposed at the processing position. Gas is discharged from the gas nozzle 501d of the processing head 51 toward the surface peripheral portion 911 of the substrate 9 to be rotated (blow off process). When a predetermined time (for example, 15 seconds) elapses after the gas discharge from the peripheral processing head 51 is started, the gas discharge from the peripheral processing head 51 is stopped.

  By this liquid swing-off process, most of the processing liquid remaining on the surface peripheral edge portion 911 (that is, SC-2 remaining on the surface peripheral edge portion 911 without being shaken off from the substrate 9 in the cleaning process in step S204). The substrate 9 is shaken off. In the cleaning process in step S204, the SC-2 remaining on the surface peripheral portion 911 without being shaken off from the substrate 9 contains impurities such as metal components removed from the substrate 9 by the cleaning process. Thereafter, the liquid is shaken off, so that the impurities are shaken off from the substrate 9 at an early stage. Therefore, the risk that the impurities removed from the substrate 9 by the chemical treatment by SC-2 are reattached to the substrate 9 is reduced.

<Iii. Rinse processing>
Subsequently, a rinsing process is performed (step S206). The specific flow of the rinsing process is the same as that in step S202. That is, the rinsing liquid is discharged from the rinsing liquid nozzle 501c of the peripheral portion processing head 51 arranged at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated. When a predetermined time (for example, 5 seconds) has elapsed since the start of the discharge of the rinse liquid, the discharge of the rinse liquid from the peripheral portion processing head 51 is stopped.

  By this rinsing treatment, the treatment liquid (here, SC-2) adhering to the surface peripheral edge portion 911 is rinsed away. However, since the liquid shaking process is performed prior to the rinsing process (step S205), the surface peripheral edge portion 911 is in a state in which almost no SC-2 remains. Accordingly, the processing time for the rinsing process can be shorter than when the liquid shaking process is not performed. Further, in this rinsing process, since the rinsing liquid is discharged toward the surface peripheral edge portion 911 where almost no SC-2 remains, the processing liquid is applied to the device region 90 due to the collision of the processing liquid. Intrusion is unlikely to occur.

<Iv. Liquid shaking off process>
Subsequently, a liquid shake-off process is performed (step S207). The specific flow of the liquid swing-off process is as described in step S203. That is, first, the substrate 9 is rotated for a predetermined time in a state where the discharge of the fluid toward the surface peripheral portion 911 is stopped (liquid feeding step), and thereafter, for the peripheral portion disposed at the processing position. Gas is discharged from the gas nozzle 501d of the processing head 51 toward the surface peripheral portion 911 of the substrate 9 to be rotated (blow off process). When a predetermined time (for example, 15 seconds) elapses after the gas discharge from the peripheral processing head 51 is started, the gas discharge from the peripheral processing head 51 is stopped.

  By this liquid swing-off process, most of the processing liquid remaining on the surface peripheral edge portion 911 (that is, the rinse liquid remaining on the surface peripheral edge portion 911 without being shaken off from the substrate 9 in the rinse process of step S206) It is shaken off from the substrate 9.

<Second acid treatment (DHF)>
<I. Chemical treatment>
Next, chemical treatment with DHF is performed on the surface peripheral edge portion 911 of the substrate 9 (step S208). Specifically, DHF is discharged from the first chemical liquid nozzle 501a of the peripheral portion processing head 51 arranged at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated. The discharge flow rate of DHF at this time is, for example, 20 (mL / min) or more and 50 (mL / min) or less. When a predetermined time (for example, 10 seconds) has elapsed since the start of DHF discharge, the discharge of DHF from the peripheral portion processing head 51 is stopped.

  By this chemical processing, the thin film formed on the surface peripheral portion 911 of the substrate 9 is removed (etching processing). However, here, since the liquid shake-off process is performed prior to the chemical liquid process (step S207), the DHF is discharged toward the surface peripheral edge portion 911 where the rinse liquid hardly remains. Therefore, it is difficult for the processing liquid to enter the device region 90 due to the collision of the processing liquid. In addition, since the DHF and the rinsing liquid do not mix on the surface peripheral edge 911, the desired concentration of DHF can be appropriately applied to the surface peripheral edge 911.

  While the chemical treatment is being performed, the first suction pipe 502a has an extra DHF on the surface peripheral portion 911 in parallel with the discharge of the DHF toward the surface peripheral portion 911 by the first chemical solution nozzle 501a. Is sucking. That is, simultaneously with the start of the discharge of DHF from the first chemical liquid nozzle 501a toward the surface peripheral edge portion 911, suction from the first suction pipe 502a is started and directed toward the surface peripheral edge portion 911 from the first chemical liquid nozzle 501a. Simultaneously with the stop of the discharge of all the DHF, the suction from the first suction pipe 502a is stopped. As a result, it is possible to suppress the excessive DHF supplied to the surface peripheral edge portion 911 from spreading to the center side of the substrate 9.

  Further, while this chemical treatment is being performed, gas is discharged from the gas nozzle 501d of the peripheral portion processing head 51 toward the surface peripheral portion 911. The gas discharge flow rate at this time is, for example, 14 (L / min). That is, at each position in the surface peripheral edge portion 911, the old DHF (that is, the old DHF that was supplied from the first chemical nozzle 501a one round before and was not shaken off while the substrate 9 is rotated once) is changed to the gas nozzle 501d. After being removed by the gas discharged from, new DHF is supplied to the position from the first chemical liquid nozzle 501a. According to this configuration, as described above, it is possible to suppress the entry of the processing liquid into the device region 90 due to the collision between the old processing liquid that has not been shaken off while the substrate 9 is rotated once and the newly supplied processing liquid. . Further, according to this configuration, it is possible to increase the processing efficiency by always applying fresh DHF to the substrate 9. Further, according to this configuration, it is possible to avoid a situation in which a large amount of DHF is temporarily held at each position in the surface peripheral edge portion 911. As a result, the etching width can be stabilized and the control accuracy of the etching width can be increased. Further, when DHF is supplied, the surface peripheral edge portion 911 becomes water repellent, and thus the old processing liquid held in the surface peripheral edge portion 911 may be partially thickened. When a new processing liquid is supplied in this state, the processing liquid is bounced and easily jumps. Therefore, by blowing off the old processing liquid toward the outside of the substrate 9 by the gas discharged from the gas nozzle 501d, the entry of the droplets or the like into the device region 90 is sufficiently suppressed.

<Ii. Rinse processing>
Subsequently, a rinsing process is performed (step S209). The specific flow of the rinsing process is the same as that in step S202. That is, the rinsing liquid is discharged from the rinsing liquid nozzle 501c of the peripheral portion processing head 51 arranged at the processing position toward the surface peripheral portion 911 of the substrate 9 to be rotated. When a predetermined time (for example, 5 seconds) has elapsed since the start of the discharge of the rinse liquid, the discharge of the rinse liquid from the peripheral portion processing head 51 is stopped.

  By this rinsing treatment, the treatment liquid (here, DHF) adhering to the surface peripheral edge portion 911 is rinsed away. However, gas is discharged from the gas nozzle 501d of the peripheral portion processing head 51 toward the surface peripheral portion 911 of the substrate 9 even during the rinsing process. The gas discharge flow rate at this time is, for example, 14 (L / min). That is, at each position within the surface peripheral edge portion 911, the old rinse liquid (that is, the old rinse liquid that was supplied from the rinse liquid nozzle 501c one round before and was not shaken off while the substrate 9 is rotated once) is gas gas nozzle. After being removed by the gas discharged from 501d, a new rinse liquid is supplied from the rinse liquid nozzle 501c to the position. According to this configuration, as described above, it is possible to suppress the entry of the processing liquid into the device region 90 due to the collision between the old processing liquid that has not been shaken off while the substrate 9 is rotated once and the newly supplied processing liquid. . Further, according to this configuration, the old rinsing liquid containing DHF can be quickly removed from the surface peripheral edge portion 911, and a new rinsing liquid not containing DHF can be applied to the substrate 9. Therefore, the processing efficiency of the rinsing process Will increase. Further, according to this configuration, as described above, the droplets of the processing liquid bounced at the surface peripheral edge portion 911 are blown out toward the outside of the substrate 9 by the airflow formed by the gas discharged from the gas nozzle 501d. Therefore, the liquid droplets and the like are sufficiently suppressed from entering the device region 90.

<Iii. Liquid shaking off process>
Subsequently, a liquid shake-off process is performed (step S210). The specific flow of the liquid swing-off process is as described in step S203. That is, first, the substrate 9 is rotated for a predetermined time in a state where the discharge of the fluid toward the surface peripheral portion 911 is stopped (liquid feeding step), and thereafter, for the peripheral portion disposed at the processing position. Gas is discharged from the gas nozzle 501d of the processing head 51 toward the surface peripheral portion 911 of the substrate 9 to be rotated (blow off process). When a predetermined time (for example, 5 seconds) elapses after gas discharge from the peripheral processing head 51 is started, gas discharge from the peripheral processing head 51 is stopped.

  By this liquid shaking off treatment, most of the processing liquid remaining on the surface peripheral edge portion 911 (that is, the rinse liquid remaining on the surface peripheral edge portion 911 without being shaken off from the substrate 9 in the rinsing process of step S209) It is shaken off from the substrate 9.

<5-3. Processing surface switching process>
When the surface peripheral edge process (step S2) is completed, a process surface switching process (step S3) is subsequently performed. In the processing surface switching processing, the rotational speed of the spin base 21 (that is, the rotational speed of the substrate 9) is reduced in preparation for the back surface processing (step S4) (see FIGS. 17 and 18). That is, the rotation speed of the spin base 21 is switched from the rotation speed (here, 600 rpm) at the time of the peripheral surface treatment to a lower rotation speed (lower rotation speed) (for example, 20 rpm).

  However, as described above, the cover gas is continuously supplied from the cover gas nozzle 41 toward the vicinity of the center of the surface 91 of the substrate 9 even during the processing surface switching process.

<5-4. Backside treatment>
When the processing surface switching process (step S3) is completed, the back surface processing (step S4) is subsequently performed. The back surface processing will be described with reference to FIGS. FIG. 17 is a diagram illustrating the flow of steps S2 to S4. FIG. 18 is a diagram for explaining the back surface processing and the like, and schematically shows some elements of the substrate processing apparatus 1 in a state where each processing step in the back surface processing is executed.

  However, as described above, the cover gas is continuously supplied from the cover gas nozzle 41 toward the vicinity of the center of the front surface 91 of the substrate 9 even during the back surface processing, whereby the device region 90 is applied to the back surface 92. It is protected from the atmosphere of the processing liquid supplied.

  Prior to the supply of the treatment liquid to the back surface 92, the rotation speed of the spin base 21 is switched to a low rotation speed of 20 rpm. The “low rotation speed” here means that the processing liquid supplied to the back surface 92 of the substrate 9 spreads over the entire back surface 92 in a state where the substrate 9 is rotated at the rotation speed. The speed is such that it does not wrap around the surface 91, and specifically, for example, a rotational speed corresponding to a rotational speed of 20 rpm or less.

  First, the chemical treatment by SC-1 is performed on the back surface 92 of the substrate 9 (step S401). Specifically, SC-1 is discharged from the back surface side discharge port 82 toward the center of the back surface 92 of the substrate 9 rotated at a low rotation speed. At this time, the discharge flow rate of SC-1 is, for example, 500 (mL / min) or more and 2000 (mL / min) or less. The SC-1 supplied to the vicinity of the center of the back surface 92 spreads over the entire back surface 92 due to the centrifugal force accompanying the rotation of the substrate 9, whereby the chemical treatment by SC-1 proceeds on the back surface 92 of the substrate 9. To do. Here, the thin film formed on the back surface 92 of the substrate 9 is removed by the chemical treatment by SC-1 (etching process). When a predetermined time (for example, 20 seconds) elapses after the SC-1 starts to be discharged, the SC-1 discharge from the rear surface side discharge port 82 is stopped.

  Subsequently, a rinsing process is performed (step S402). Specifically, the rinsing liquid is discharged from the back surface-side discharge port 82 toward the vicinity of the center of the back surface 92 of the substrate 9 while the substrate 9 is rotated at a low rotation speed. The rinse liquid supplied to the vicinity of the center of the back surface 92 spreads over the entire back surface 92 due to the centrifugal force accompanying the rotation of the substrate 9, whereby the treatment liquid (here, SC-1) adhering to the back surface 92 is formed. Rinse away. When a predetermined time (for example, 20 seconds) has elapsed since the start of the discharge of the rinse liquid, the discharge of the rinse liquid from the rear surface side discharge port 82 is stopped.

  Subsequently, the chemical treatment by SC-2 is performed on the back surface 92 of the substrate 9 (step S403). Specifically, SC-2 is discharged from the back surface side discharge port 82 toward the vicinity of the center of the back surface 92 of the substrate 9 while the substrate 9 is rotated at a low rotation speed. SC-2 supplied to the vicinity of the center of the back surface 92 spreads over the entire back surface 92 due to the centrifugal force accompanying the rotation of the substrate 9, whereby the chemical treatment with SC-2 proceeds on the back surface 92. Here, the metal component (for example, Mo, Co, etc.) adhering to the back surface 92 of the board | substrate 9 etc. is removed by chemical | medical solution process by SC-2 (cleaning process). When a predetermined time (for example, 20 seconds) elapses after SC-2 is started to be discharged, SC-2 discharge from the rear surface side discharge port 82 is stopped.

  Subsequently, a rinsing process is performed (step S404). The specific flow of the rinsing process is the same as that in step S402. That is, the rinsing liquid is discharged from the back surface side discharge port 82 toward the vicinity of the center of the back surface 92 of the substrate 9 while the substrate 9 is rotated at a low rotation speed. The rinse liquid supplied to the vicinity of the center of the back surface 92 spreads over the entire back surface 92 due to the centrifugal force accompanying the rotation of the substrate 9, whereby the treatment liquid (here, SC-2) adhering to the back surface 92 is formed. Rinse away. When a predetermined time (for example, 20 seconds) has elapsed since the start of the discharge of the rinse liquid, the discharge of the rinse liquid from the rear surface side discharge port 82 is stopped.

  Subsequently, a chemical treatment with DHF is performed on the back surface 92 of the substrate 9 (step S405). Specifically, DHF is discharged from the back surface side discharge port 82 toward the center of the back surface 92 of the substrate 9 while the substrate 9 is rotated at a low rotation speed. The discharge flow rate of DHF at this time is, for example, 500 (mL / min) or more and 2000 (mL / min) or less. The DHF supplied to the vicinity of the center of the back surface 92 spreads over the entire back surface 92 due to the centrifugal force accompanying the rotation of the substrate 9, whereby the chemical treatment with DHF proceeds on the back surface 92. Here, the thin film formed on the back surface 92 of the substrate 9 is removed by the chemical treatment with DHF (etching treatment). When a predetermined time (for example, 10 seconds) has elapsed since the start of the DHF discharge, the discharge of the DHF from the rear surface side discharge port 82 is stopped.

  Subsequently, a rinsing process is performed (step S406). The specific flow of the rinsing process is the same as that in step S402. That is, the rinsing liquid is discharged from the back surface side discharge port 82 toward the vicinity of the center of the back surface 92 of the substrate 9 while the substrate 9 is rotated at a low rotation speed. The rinse liquid supplied to the vicinity of the center of the back surface 92 spreads over the entire back surface 92 due to the centrifugal force accompanying the rotation of the substrate 9, whereby the processing liquid (here, DHF) adhering to the back surface 92 is rinsed. Washed away. When a predetermined time (for example, 22.5 seconds) elapses after the start of the discharge of the rinse liquid, the discharge of the rinse liquid from the rear surface side discharge port 82 is stopped. This completes the back surface processing.

<5-5. Drying process>
When the back surface process (step S4) is completed, a drying process (step S5) is subsequently performed. In the drying process, in a state where the discharge of the processing liquid toward the substrate 9 is stopped, the rotation speed of the spin base 21 (that is, the rotation speed of the substrate 9) is changed from the low rotation speed at the time of performing the back surface processing. Increased to a relatively high speed, rotational speed during drying. Thereby, the rinse liquid adhering to the back surface 92 of the substrate 9 is gradually shaken off, and the substrate 9 is finally dried. However, as described above, the cover gas continues to be supplied from the cover gas nozzle 41 to the surface 91 of the substrate 9 during the drying process, thereby protecting the device region 90 from the atmosphere of the processing liquid and the like. ing.

  When a predetermined time elapses after the substrate 9 starts rotating at the rotation speed at the time of drying, the rotation of the spin base 21 is stopped. Thereafter, the gas discharge from the cover gas nozzle 41 is stopped, and the cover gas nozzle 41 is moved to the retracted position. Further, the peripheral edge processing head 51, the cup 31, and the semicircular arc members 61 and 62 are moved to the respective retracted positions. Then, the group of holding members 25 opens the substrate 9, and the transfer robot CR carries the substrate 9 out of the substrate processing apparatus 1. Thus, a series of processes for the substrate 9 is completed.

<6. Effect>
In the above embodiment, each suction pipe 502a, 502b has a processing liquid nozzle (specifically, a processing liquid nozzle associated with the suction pipes 502a, 502b. In the above embodiment, The excess processing liquid supplied from the chemical nozzles 501a and 501b) onto the surface peripheral edge 911 can be removed from the surface peripheral edge. As a result, it is possible to suppress the excessive processing liquid on the surface peripheral edge portion 911 from spreading to the center side of the substrate 9. That is, it can suppress that the inner edge position of the area | region where the process liquid acts in the surface peripheral part 911 shifts | deviates to the center side of the board | substrate 9 rather than the expected position. In addition, it is possible to avoid a situation in which the processing liquid that has spread to the center side of the substrate 9 enters the device region 90 and causes a defect in the device pattern.

  Further, according to the above embodiment, the suction pipes 502a and 502b and the corresponding processing liquid nozzles are integrally supported in the peripheral edge processing head 51. According to this configuration, the suction pipes 502a and 502b and the processing liquid nozzle corresponding thereto are integrally moved relative to each other when viewed from each position in the surface peripheral edge portion 911 of the substrate 9 to be rotated. Accordingly, the supply timing of the treatment liquid from the treatment liquid nozzle and the suction timing of the treatment liquid from the suction pipes 502a and 502b are equal at all positions within the surface peripheral edge portion 911. Thereby, it is possible to suppress variation in the increase / decrease mode of the amount of the processing liquid held at each position in the surface peripheral edge portion 911. As a result, each position in the surface peripheral part 911 can be processed uniformly.

  Further, according to the above-described embodiment, in the peripheral portion processing head 51, the suction pipes 502a and 502b are in the vicinity of the processing liquid nozzle corresponding to the suction pipes 502a and 502b, and the rotation direction of the substrate 9 is higher than the processing liquid nozzle It is arranged on the downstream side. According to this configuration, immediately after a new processing liquid is supplied from the processing liquid nozzle to each position in the surface peripheral edge portion 911 of the substrate 9 to be rotated, the excess processing liquid supplied to the position is transferred to the processing liquid. Suction can be sucked from the suction pipes 502a and 502b corresponding to the nozzles. Thereby, the amount of the processing liquid held at each position in the surface peripheral edge portion 911 can always be kept at a necessary and sufficient amount. As a result, the inner edge position of the area where the processing liquid acts on the surface peripheral edge portion 911 can be controlled with high accuracy.

  Further, according to the above-described embodiment, in the state where the suction pipes 502a and 502b are arranged at the suction position, the inner end 5211 of the suction port 521 is a region where the treatment liquid in the surface peripheral edge portion 911 should act (that is, The end surface 93 side of the substrate 9 is closer to the inner edge position (target inner edge position t) of the target processing area) where the processing liquid discharged from the processing liquid nozzle associated with the suction pipes 502a and 502b is to act. is there. According to this configuration, the suction pressure can be applied to the end surface 93 side of the substrate 9 from the target inner edge position t. Therefore, it can suppress that a process liquid protrudes inside the area | region which should make this act.

  Further, according to the above-described embodiment, the outer end 5212 of the suction port 521 is on the inner side of the end surface 93 of the substrate 9 in a state where the suction tubes 502 a and 502 b are disposed at the suction position. According to this configuration, the suction pressure can be effectively applied to the processing liquid.

  Further, according to the above embodiment, the processing liquid is discharged toward the first position on the substrate 9, and extra processing is performed from the second position on the end face 93 side of the substrate 9 with respect to the first position. Liquid is aspirated. According to this configuration, excess processing liquid on the surface peripheral edge portion 911 flows from the inside to the outside of the substrate 9 and is sucked from the suction pipes 502a and 502b. Spreading toward the center side of the substrate 9 can be sufficiently suppressed.

  Further, according to the above embodiment, the peripheral portion processing head 51 includes the gas nozzle 501 d that discharges gas toward the surface peripheral portion 911. According to this configuration, the old processing liquid supplied from the processing liquid nozzles 501a, 501b, and 501c to the surface peripheral edge portion 911 can be removed with the gas discharged from the gas nozzle 501d. As a result, it is difficult for a newly supplied processing liquid to collide with and bounce off the old processing liquid on the surface peripheral edge 911. Thereby, the processing liquid is prevented from entering the device region 90.

  Further, according to the above-described embodiment, the excess processing liquid on the surface peripheral edge 911 is sucked in parallel with the discharge of the processing liquid toward the surface peripheral edge 911 of the rotated substrate 9. According to this configuration, it is possible to prevent the excess processing liquid on the surface peripheral edge portion 911 from spreading to the center side of the substrate 9 while avoiding a decrease in processing efficiency.

<7. Modified example of processing head for peripheral edge>
A peripheral portion processing head 51a according to another embodiment will be described with reference to FIG. FIG. 19 is a perspective view of the peripheral edge processing head 51a. In addition, in the figure, the same code | symbol is attached | subjected about the same structure as the structure demonstrated in said embodiment. Moreover, in the following description, about the same structure as the structure demonstrated in said embodiment, while abbreviate | omitting description, the same code | symbol is attached | subjected and shown.

  The peripheral portion processing head 51a includes a plurality of discharge nozzles 501a to 501d and a plurality of suction pipes 502a and 502b, similarly to the peripheral portion processing head 51 according to the above embodiment. Furthermore, the peripheral portion processing head 51a includes a support portion 500 that integrally supports the plurality of discharge nozzles 501a to 501d and the plurality of suction pipes 502a and 502b.

  The peripheral portion processing head 51a is different from the peripheral portion processing head 51 according to the above embodiment in the layout of the suction tubes 502a and 502b. That is, in the peripheral portion processing head 51a, the first suction pipe 502a is in the vicinity of the first chemical liquid nozzle 501a that is the corresponding processing liquid nozzle, and in the rotation direction AR9 of the substrate 9 more than the first chemical liquid nozzle 501a. Arranged upstream. Further, the second suction pipe 502b is disposed in the vicinity of the second chemical liquid nozzle 501b, which is a corresponding processing liquid nozzle, and upstream of the second chemical liquid nozzle 501b in the rotation direction AR9 of the substrate 9. However, the “near” here also refers to the angle formed by the first suction pipe 502a and the first chemical liquid nozzle 501a (or the second suction pipe 502b and the second suction pipe 502b when viewed from the center of the substrate 9 as in the above embodiment. The angle formed by the second chemical liquid nozzle 501b) is 10 ° or less, and particularly preferably 5 ° or less.

  As described above, in the peripheral edge processing head 51a, the suction pipes 502a and 502b are arranged in the vicinity of the corresponding processing liquid nozzle and upstream of the processing liquid nozzle in the rotation direction AR9 of the substrate 9. The According to this configuration, the excess processing liquid supplied from the processing liquid nozzle and flowing upstream in the rotation direction of the substrate 9 is sucked from the suction pipes 502a and 502b corresponding to the processing liquid nozzle from the surface peripheral edge portion 911. Can be removed. As a result, it is possible to suppress the excessive processing liquid on the surface peripheral edge portion 911 from spreading to the center side of the substrate 9.

  Further, according to this configuration, each position in the surface peripheral edge portion 911 of the substrate 9 to be rotated immediately before passing under the chemical nozzles 501a and 501b, the suction pipes 502a and 501b corresponding to the chemical nozzles 501a and 501b. It will pass below 502b. Accordingly, after the old processing liquid supplied from the processing liquid nozzle one cycle before and not shaken off while the substrate 9 is rotated once is sucked from the suction pipes 502a and 502b corresponding to the processing liquid nozzle, A new treatment liquid can be supplied from the treatment liquid nozzle. Accordingly, it is possible to suppress the occurrence of a situation in which the newly supplied processing liquid collides with the old processing liquid on the surface peripheral edge portion 911 and the processing liquid enters the device region 90.

<8. Other variations>
In the above embodiment, the peripheral portion processing head 51 includes two suction pipes 502a and 502b, and each suction pipe 502a and 502b is associated with each chemical solution nozzle 501a and 501b. The processing head 51 may further include a suction pipe associated with the rinse liquid nozzle 501c. Of course, the peripheral portion processing head 51 does not necessarily include two or more suction pipes, but may include at least one suction pipe corresponding to one of the processing liquid nozzles 501a, 501b, and 501b. Good. A plurality of suction pipes corresponding to one processing liquid nozzle may be provided.

  In the peripheral portion processing head 51 according to the above-described embodiment, the first chemical nozzle 501a is upstream of the rinsing liquid nozzle 501c in the rotation direction AR9 of the substrate 9, and the second chemical nozzle is downstream. 501b is disposed, but the second chemical liquid nozzle 501b is disposed on the upstream side in the rotation direction AR9 of the substrate 9 with respect to the rinsing liquid nozzle 501c, and the first chemical liquid nozzle 501a is disposed on the downstream side. Good.

  Moreover, in said embodiment, while each of the chemical | medical solution process by SC-2 (step S201), the chemical | medical solution process by SC-2 (step S204), and the chemical | medical solution process by DHF (step S208) is performed, it aspirates Although the tubes 502a and 502b are configured to suck the excess chemical solution supplied to the surface peripheral edge portion 911 of the substrate 9, it is not always necessary to perform the suction by the suction tubes 502a and 502b in all the chemical solution processing. . For example, in the chemical treatment for the purpose of cleaning, the suction pipes 502a and 502b may not be sucked.

  Further, in the above-described embodiment, the suction from the suction pipes 502a and 502b is started simultaneously with the start of the discharge of the chemical liquid toward the surface peripheral edge portion 911 from the chemical liquid nozzles 501a and 501b. The suction from the suction pipes 502a and 502b may be started after the start of the discharge or before the start of the discharge of the chemical solution.

  In the above embodiment, the suction from the suction pipes 502a and 502b is stopped at the same time as the discharge of the chemical liquid from the chemical nozzles 501a and 501b toward the surface peripheral portion 911 is stopped. The suction from the suction pipes 502a and 502b may be stopped after the discharge of the chemical liquid is stopped or before the discharge of the chemical liquid is stopped.

  Moreover, in said embodiment, the chemical | medical solution process (step S201) by SC-1 and the subsequent rinse process (step S202), the chemical | medical solution process by SC-2 (step S204), and the subsequent rinse process ( In each process of step S206), the gas is not supplied from the gas nozzle 50d to the surface peripheral edge portion 911. When SC-1 or SC-2 is supplied, the surface peripheral edge portion 911 becomes hydrophilic, so that the liquid film of the processing solution supplied here becomes relatively stable only by centrifugal force due to the rotation of the substrate. This is because, when the gas is supplied to the surface peripheral edge portion 911 in such a state, there is a risk of causing liquid splashing. However, depending on the processing target or the like, gas may be supplied to the surface peripheral edge portion 911 while each of the above processes is performed.

  Moreover, in said embodiment, in each of a surface periphery process (step S2) and a back surface process (step S4), the chemical | medical solution process using three types of chemical | medical solutions (SC-1, SC-2, and DHF) However, although the rinsing process and the like are performed in order, it is not always necessary to perform the chemical treatment using these three types of chemical solutions. For example, an aqueous solution such as SC-1, SC-2, DHF, BDHF (buffered hydrofluoric acid), HF (hydrofluoric acid), hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, oxalic acid or ammonia, or a mixture thereof The chemical liquid treatment may be performed on the front surface peripheral portion 911 or the back surface 92 using one or more chemical liquids selected from a solution and the like.

  The fluid supply unit 55 according to the above embodiment includes a hydrofluoric acid supply source that supplies hydrofluoric acid (for example, 49% hydrofluoric acid), a hydrochloric acid supply source that supplies hydrochloric acid, and a peroxide that supplies hydrogen peroxide. Hydrogen supply source, ammonium hydroxide supply source for supplying ammonium hydroxide, pure water supply source for supplying pure water, carbon dioxide gas supply source for supplying carbon dioxide gas, nitrogen gas supply source for supplying nitrogen gas, piping, An on-off valve and a mixing valve may be combined. In this configuration, for example, DHF is generated by mixing hydrofluoric acid from a hydrofluoric acid supply source and pure water from a pure water supply source at a predetermined ratio in the mixing valve, and this is generated at the peripheral portion. The processing head 51 (specifically, the first chemical liquid nozzle 501a) is supplied. Also, SC-2 is generated by mixing hydrochloric acid from the hydrochloric acid supply source and hydrogen peroxide from the hydrogen peroxide supply source at a predetermined ratio in the mixing valve, and this is processed for the peripheral portion. It is supplied to the head 51 (specifically, the first chemical liquid nozzle 501a). In addition, ammonium hydroxide from an ammonium hydroxide supply source, hydrogen peroxide from a hydrogen peroxide supply source, and pure water from a pure water supply source are mixed in a predetermined ratio in the mixing valve. Produces SC-1, which is supplied to the peripheral edge processing head 51 (specifically, the second chemical nozzle 501b). Further, the rinsing liquid is generated by melting carbon dioxide in the pure water from the pure water supply source, and this is supplied to the peripheral portion processing head 51 (specifically, the rinsing liquid nozzle 501c).

  Further, in the above embodiment, the substrate processing apparatus 1 performs the processing on the front surface peripheral portion 911 and the back surface 92 of the substrate 9, but in the substrate processing apparatus 1, only the front surface peripheral portion 911 is processed. A process may be performed on this. In the substrate processing apparatus 1, processing (for example, film formation processing) other than etching processing and cleaning processing may be performed on at least one of the front surface peripheral portion 911 and the back surface 92.

  In the above embodiment, the substrate processing apparatus 1 performs the process on the back surface 92 after performing the process on the front surface peripheral portion 911 of the substrate 9. The processing for 92 may be performed in parallel.

  In the above embodiment, the substrate 9 is a semiconductor wafer. However, the substrate 9 is a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a substrate for an optical disk, a substrate for a magnetic disk, a magneto-optical disk. For example, a glass substrate for a photomask, a substrate for a solar cell, and the like.

  As described above, the present invention has been shown and described in detail, but the above description is illustrative in all aspects and not limiting. Therefore, embodiments of the present invention can be modified or omitted as appropriate within the scope of the invention.

DESCRIPTION OF SYMBOLS 100 Substrate processing system 130 Control part 1 Substrate processing apparatus 2 Spin chuck 3 Spattering prevention part 4 Surface protection part 5 Perimeter processing part 6 Liquid splash suppression part 7 Heat processing part 8 Back surface processing part 51 Peripheral part processing head 55 Fluid supply part 56 Suction pressure forming section 501 Discharge nozzle 501a First chemical liquid nozzle 501b Second chemical liquid nozzle 501c Rinse liquid nozzle 501d Gas nozzle 511 Nozzle body section 512 Discharge surface 513 Introductory flow path section 514 Discharge flow path section 5141 Vertical flow path section 5142 Inclined flow path section 515 Ejection port 502 Suction tube 502a First suction tube 501b Second suction tube 521 Suction port 5211 Inner end of suction port 5212 Outer end of suction port 9 Substrate 90 Device region 91 Front surface 911 Substrate surface peripheral portion 92 Substrate back surface 93 End face of substrate Qa, Qb, Qc, Qd Target discharge position Ra, Rb target suction position

Claims (10)

A substrate holding unit that rotates the substrate around a vertical rotation axis that passes through the center in the plane while holding the substrate in a horizontal posture;
A peripheral portion processing head for performing processing on the peripheral portion of the surface of the substrate held by the substrate holding portion;
With
The peripheral edge processing head comprises:
A processing liquid nozzle that discharges the processing liquid toward the peripheral edge of the surface;
A portion of the processing liquid that is associated with the processing liquid nozzle and is discharged onto the peripheral surface of the surface is sucked out in the processing of the peripheral surface of the surface while leaving a portion necessary for the processing of the peripheral surface of the surface. by removing Te, a suction pipe the treatment liquid to control the inner position of the region which acts on the substrate,
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
The peripheral edge processing head comprises:
A support unit that integrally supports the treatment liquid nozzle and the suction pipe;
Comprising
Substrate processing equipment. The substrate processing apparatus according to claim 1, wherein:
In the peripheral edge processing head,
The suction pipe is disposed in the vicinity of the processing liquid nozzle and immediately after the processing liquid nozzle in the rotation direction of the substrate.
Substrate processing equipment. The substrate processing apparatus according to claim 1, wherein:
In the peripheral edge processing head,
The suction tube is disposed in the vicinity of the processing liquid nozzle and immediately before the processing liquid nozzle in the rotation direction of the substrate.
Substrate processing equipment. A substrate holding unit that rotates the substrate around a vertical rotation axis that passes through the center in the plane while holding the substrate in a horizontal posture;
A peripheral portion processing head for performing processing on the peripheral portion of the surface of the substrate held by the substrate holding portion;
With
The peripheral edge processing head comprises:
A processing liquid nozzle that discharges the processing liquid toward the peripheral edge of the surface;
A suction pipe that is associated with the processing liquid nozzle, sucks excess processing liquid on the peripheral edge of the surface, and controls an inner edge position of a region where the processing liquid acts on the substrate;
With
In the state where the suction port opened at the tip of the suction tube is disposed at a suction position so as to face the peripheral surface portion of the surface, the end of the suction port at the center side of the substrate is in the peripheral surface portion of the surface. It is on the end face side of the substrate from the inner edge position of the region where the treatment liquid is to act.
Substrate processing equipment. A substrate holding unit that rotates the substrate around a vertical rotation axis that passes through the center in the plane while holding the substrate in a horizontal posture;
A peripheral portion processing head for performing processing on the peripheral portion of the surface of the substrate held by the substrate holding portion;
With
The peripheral edge processing head comprises:
A processing liquid nozzle that discharges the processing liquid toward the peripheral edge of the surface;
A suction pipe that is associated with the processing liquid nozzle, sucks excess processing liquid on the peripheral edge of the surface, and controls an inner edge position of a region where the processing liquid acts on the substrate;
With
In the state where the suction port opened at the tip of the suction tube is disposed at a suction position so as to face the peripheral edge of the surface, the end of the suction port on the end surface side of the substrate is more than the end surface of the substrate. Is also inside,
Substrate processing equipment. The substrate processing apparatus according to claim 1,
The processing liquid nozzle discharges the processing liquid toward a first position on the substrate;
The suction tube sucks the processing liquid from a second position on the end face side of the substrate with respect to the first position;
Substrate processing equipment. The substrate processing apparatus according to claim 1,
The peripheral edge processing head comprises:
A gas nozzle for discharging gas toward the peripheral edge of the surface;
Comprising
Substrate processing equipment. A substrate processing apparatus according to any one of claims 1 to 8,
A control unit for controlling the peripheral edge processing head;
With
The control unit is
While discharging the processing liquid from the processing liquid nozzle toward the peripheral edge of the surface of the substrate to be rotated, the suction pipe sucks the excessive processing liquid on the peripheral edge of the surface.
Substrate processing equipment. a) rotating the substrate around a vertical rotation axis passing through the center in the plane while holding the substrate in a horizontal position;
b) discharging the processing liquid toward the peripheral edge of the surface of the substrate to be rotated;
c) In parallel with the step b), the processing liquid discharged onto the surface peripheral edge portion leaves an unnecessary portion for processing the surface peripheral edge portion while leaving a portion necessary for the processing of the surface peripheral edge portion. Controlling the inner edge position of the region where the treatment liquid acts on the substrate by removing by suction ; and
A substrate processing method.

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