JP2015065555A - Crystal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a crystal device which quickly transmits heat of an IC component to a crystal vibration piece while inhibiting increase in the manufacturing cost.SOLUTION: A crystal device (100) includes: a crystal vibration element (110) including a crystal vibration piece (140) having an excitation electrode (141), an insulative base plate (150) including a first surface, on which the crystal vibration piece is placed, and a second surface which is located at the opposite side of the first surface and has mounting terminals (155) for mounting the crystal device, and a metal lid member (160) which hermetically seals the crystal vibration piece between itself and the insulative base plate; an IC component (130) having a top surface and a bottom surface including multiple external electrodes (131) and incorporating an oscillation circuit which oscillates the crystal vibration piece; and a heat conductive adhesive (120) which contains a substance that easily conducts heat and bonds the top surface of the IC component to the lid member to fix these components.

Description

  The present invention relates to a crystal device in which a surface-mount type crystal resonator and an IC (integrated circuit element) component having an oscillation circuit for oscillating the crystal resonator are included in one package.

  Surface mount crystal oscillators with related parts packaged are widely used. In the crystal oscillator, a difference is likely to occur between the temperature of the crystal resonator element in the crystal resonator and the temperature detected by the temperature sensor mounted on the IC component connected to the outside of the crystal resonator. When there is such a temperature difference, the crystal oscillator cannot obtain a stable frequency characteristic. In addition, when the crystal oscillator is started, a time difference occurs between the rise in the temperature of the IC component and the rise in the temperature of the crystal vibrating piece, and the frequency drift characteristic is deteriorated.

  In Patent Document 1, an IC component having an oscillation circuit is arranged outside a crystal resonator having a crystal resonator element. Then, a heat conductive member having high heat conductivity is embedded in the ceramic base plate of the crystal resonator so that the heat of the IC component is quickly transmitted to the crystal vibrating piece.

JP 2010-278712 A

  However, since Patent Document 1 embeds a heat conductive member in a ceramic base plate of a crystal resonator, a special process is required, resulting in a problem of high cost.

  According to the present invention, it is possible to provide a crystal device that can quickly transfer heat of an IC component to a crystal resonator element while suppressing an increase in manufacturing cost.

  A quartz crystal device according to a first aspect includes an insulation including a quartz crystal resonator element having an excitation electrode, a first surface on which the quartz crystal resonator element is disposed, and a second surface having a mounting terminal for mounting on the opposite side of the first surface. A crystal resonator element including a conductive base plate and a metal lid member that hermetically seals the crystal resonator element between the insulating base plate, a top surface, and a bottom surface having a plurality of external electrodes, An IC component including an oscillation circuit that oscillates the quartz crystal resonator element, and a heat conductive adhesive that includes a substance that easily conducts heat and is bonded and fixed to the top surface of the IC component and the lid member.

  In a crystal device according to a second aspect, in the first aspect, the IC component includes a temperature sensor that detects a temperature around the IC component and a temperature compensation circuit that compensates the frequency temperature characteristics of the crystal resonator element based on the temperature. .

  A crystal device according to a third aspect of the first or second aspect further includes a wiring substrate having a connection wiring connected to a mounting terminal formed on the insulating base plate, and the external electrode of the IC component is a wiring It is electrically connected to the substrate with metal wires.

  In the crystal device according to a fourth aspect, in the third aspect, the wiring substrate is a multilayer substrate having a first layer and a second layer recessed from the first layer, and the metal wire is connected to the first layer. The mounting terminals are connected to the second layer.

  In the third or fourth aspect, the crystal device of the fifth aspect includes a cover member that covers the metal wire, the IC component, and the crystal resonator, and the cover member is bonded to the wiring board.

  In the third or fourth aspect, the crystal device of the sixth aspect includes a non-conductive resin material that covers the metal wire, the IC component, and the crystal resonator, and the resin material is bonded to the wiring board.

  According to the present invention, it is possible to provide a quartz crystal device that can quickly transfer the heat of an IC component to a quartz crystal vibrating piece while suppressing an increase in manufacturing cost.

1 is an exploded perspective view of a crystal device 100. FIG. It is AA sectional drawing of FIG. 1 is a perspective view of a crystal device 200. FIG. 1 is a perspective view of a crystal device 300. FIG. 2 is a cross-sectional view of a crystal device 400. FIG.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described in detail with reference to the drawings. It should be noted that the scope of the present invention is not limited to these forms unless otherwise specified in the following description.

(First embodiment)
<Configuration of Crystal Device 100>
FIG. 1 is an exploded perspective view of the quartz crystal device 100. The crystal device 100 is a surface-mount type crystal device, and is used by being mounted on a printed circuit board or the like. The crystal device 100 is mainly formed of a crystal resonator element 110, a heat conductive adhesive 120, and an IC (Integrated Circuit) component 130. The crystal resonator element 110 includes a crystal resonator element 140, an insulating base plate 150, and a lid member 160. As the crystal vibrating piece 140, for example, an AT-cut crystal vibrating piece is used. The AT-cut quartz crystal resonator element has a principal surface (YZ plane) inclined with respect to the Y axis of the crystal axis (XYZ) by 35 degrees 15 minutes from the Z axis in the Y axis direction around the X axis. In the following description, the new axes tilted with respect to the axial direction of the AT-cut quartz crystal vibrating piece are used as the Y ′ axis and the Z ′ axis. That is, in the quartz device 100, the longitudinal direction of the quartz device 100 is defined as the X-axis direction, the height direction of the quartz device 100 is defined as the Y′-axis direction, and the direction perpendicular to the X-axis direction and the Y′-axis direction is described as the Z′-axis direction. To do.

  The crystal vibrating piece 140 has excitation electrodes 141 formed on the surface on the + Y′-axis side and the surface on the −Y′-axis side, and an extraction electrode is formed on each side of the crystal vibrating piece 140 on the −X-axis side. 142 is pulled out. An extraction electrode 142 extracted from the excitation electrode 141 formed on the surface on the + Y ′ axis side is extracted on the + Z ′ axis side of the side on the −X axis side, and on the −Y ′ axis side through the side surface on the + Z ′ axis side Has been pulled out to the face. The extraction electrode 142 extracted from the excitation electrode 141 formed on the surface on the −Y′-axis side is extracted on the −Z′-axis side of the side on the −X-axis side and passes through the side surface on the −Z′-axis side. Is pulled out to the surface on the + Y′-axis side.

  The insulating base plate 150 has a long side extending in the X-axis direction and a short side extending in the Z′-axis direction. Further, a mounting terminal 155 is formed on the mounting surface 152b on the −Y′-axis side of the insulating base plate 150 on which the crystal device 100 is mounted, and the surface on the + Y′-axis side of the insulating base plate 150 is formed. On the upper surface, a bonding surface 152a bonded to the lid member 160 and a recess 151 that is recessed from the bonding surface 152a in the −Y′-axis direction are formed. A mounting portion 153 on which the crystal vibrating piece 140 is mounted is formed in the recess 151. A connection electrode 154 that is electrically connected to the extraction electrode 142 of the quartz crystal vibrating piece 140 via the conductive adhesive 172 (see FIG. 2) is formed on the surface on the + Y′-axis side of the mounting portion 153. .

  The insulating base plate 150 uses, for example, ceramic as a base material, and is formed by superimposing three layers of a first layer 150a, a second layer 150b, and a third layer 150c. The first layer 150a is disposed on the + Y′-axis side of the insulating base plate 150, and a bonding surface 152a is formed on the surface of the first layer 150a on the + Y′-axis side. The second layer 150b is disposed so as to be bonded to the surface at the −Y′-axis side of the first layer 150a, and forms a placement portion 153. The third layer 150c is formed on the surface at the −Y′-axis side of the second layer 150b, and the mounting terminal 155 is formed on the mounting surface 152b that is the surface at the −Y′-axis side of the third layer 150c. Yes. Further, castellations 159 that are recessed inside the insulating base plate 150 are formed on the side surfaces of the four corners of the insulating base plate 150.

  The lid member 160 is formed in a flat plate shape, and is bonded to the bonding surface 152a of the insulating base plate 150 via a sealing material 171 (see FIG. 2) to seal the concave portion 151 of the insulating base plate 150. . The lid member 160 is made of a metal material. Further, the IC component 130 is disposed on the surface at the + Y′-axis side of the lid member 160 via the heat conductive adhesive 120.

  The IC component 130 includes an oscillation circuit (not shown) that oscillates the crystal vibrating piece 140. The oscillation circuit is electrically connected to the external electrode 131 formed on the surface on the + Y′-axis side. When the IC component 130 is placed on a printed circuit board or the like, the surface on which the external electrode 131 is formed is the bottom surface, and the surface opposite to the bottom surface is used as the top surface. Is arranged so that the surface on which is formed faces the + Y′-axis direction.

  FIG. 2 is a cross-sectional view taken along the line AA of FIG. The IC component 130 is bonded to the lid member 160 via the heat conductive adhesive 120. The IC member 130 is joined to the + Y′-axis side surface of the lid member 160 with the top surface opposite to the bottom surface facing the −Y′-axis side. The heat conductive adhesive 120 is an adhesive having a high thermal conductivity, and for example, a silicon resin containing silver (Ag) as a metal powder having a high thermal conductivity characteristic is used.

  The IC component 130 is heated when used. The heat generated in the IC component 130 is transmitted to the crystal vibrating piece 140 and heated to bring the crystal vibrating piece 140 to a predetermined temperature. In the quartz crystal device 100, the IC member 130 and the lid member 160 are formed in close contact with each other, and further, the lid member 160 formed of a metal material and having a high thermal conductivity and the thermal conductive adhesive 120 that is an adhesive having a high thermal conductivity. The heat generated in the IC component 130 can be transmitted to the crystal vibrating piece 140 via As a result, heat generated in the IC component 130 is quickly transmitted to the crystal vibrating piece 140, and loss of heat generated in the IC component 130 is suppressed. That is, in the crystal resonator element 110, the time until the crystal resonator element 140 is stabilized at a predetermined frequency can be shortened by efficiently transferring the heat of the IC component 130 in a short time.

  Further, in the quartz crystal device 100, since the quartz crystal vibrating element 110 and the IC component 130 are not specially processed, the heat of the IC component 130 is quickly transmitted to the quartz crystal vibrating piece 140 in a state where an increase in manufacturing cost is suppressed. This is preferable.

(Second Embodiment)
The quartz crystal device 100 can be formed as a different quartz crystal device by being further placed on a wiring board or placed in a thermostatic bath. Hereinafter, various quartz devices formed based on the quartz device 100 will be described. Moreover, in the following description, about the part similar to 1st Embodiment, the code | symbol similar to 1st Embodiment is attached | subjected and the description is abbreviate | omitted.

<Configuration of crystal device 200>
FIG. 3 is a perspective view of the crystal device 200. The crystal device 200 is formed by placing the crystal device 100 on the wiring board 180. A plurality of wirings (not shown) are formed on the wiring board 180, and the mounting terminals 155 are electrically connected to the wiring of the wiring board 180 via solder (not shown). In addition, one end of the metal wire 132 is connected to each external electrode 131 formed on the + Y′-axis side surface of the IC component 130, and the other end of the metal wire 132 is connected to the wiring of the wiring board 180. It is connected. The external electrode 131 of the IC component 130 is electrically connected to the wiring of the wiring board 180 by such wire bonding. Further, the oscillation circuit built in the IC component 130 is electrically connected to the crystal vibrating piece 140 via the wiring (not shown) of the wiring board 180.

  In the quartz crystal device 200, the IC component 130 detects a temperature around the IC component 130 (not shown), and a temperature compensation circuit (not shown) compensates the frequency temperature characteristic of the quartz crystal resonator element 140 based on the temperature of the temperature sensor. ) May be formed as a temperature compensated crystal oscillator (TCXO).

<Configuration of Crystal Device 300>
FIG. 4 is a perspective view of the crystal device 300. The crystal device 300 is formed by covering the crystal device 100 and the metal wire 132 with a non-conductive resin material 181 in the crystal device 200. In FIG. 4, the inside of the non-conductive resin material 181 is shown in a transparent manner. For the non-conductive resin material 181, for example, an epoxy resin can be used.

  In the crystal device 300, the crystal device 100 is covered with the non-conductive resin material 181, whereby the heat of the IC member 130 and the like generated in the crystal device 100 can be confined in the non-conductive resin material 181. As described above, in the quartz crystal device 300, the heat of the IC member 130 and the like can be used efficiently, so that the energy efficiency can be increased, and furthermore, the heat of the IC component 130 can be efficiently transmitted. The time until 140 stabilizes at a predetermined frequency can be shortened.

<Configuration of Crystal Device 400>
FIG. 5 is a cross-sectional view of the quartz crystal device 400. FIG. 5 shows a cross-sectional view including the same cross section as FIG. The crystal device 400 is formed by placing the crystal device 100 on the wiring substrate 480 and further covering the crystal device 100 with a cover member 190.

  In the wiring substrate 480, a second layer 482 is further formed on the surface at the + Y′-axis side of the wiring substrate 180, and a first layer 481 is formed on the surface at the + Y′-axis side of the second layer 482. The first layer 481 has a central region passing through, and the second layer 482 is exposed from the central region through which the first layer 481 has penetrated. Therefore, in the central region of the first layer 481, the second layer 482 is formed so as to be recessed toward the −Y′-axis side with respect to the first layer 481. A connection wiring 182 is formed on the surface of the second layer 482 exposed from the central region of the first layer 481, and a connection wiring 183 is formed on the surface of the first layer 481 around the central region of the first layer 481. Is formed. Some of the connection wirings 182 and some of the connection wirings 183 are electrically connected by through electrodes 184 that penetrate the first layer 481.

  The crystal device 100 is mounted on the second layer 482 exposed from the central region of the first layer 481 of the wiring board 480. At this time, the mounting terminal 155 of the crystal device 100 and the connection wiring 182 are electrically connected via the solder 173. The metal wire 132 connected to the external electrode 131 of the IC component 130 is electrically connected to the connection wiring 183. Thereby, the excitation electrode 141 is electrically connected to a part of the external electrodes 131 of the IC component 130. In addition, although the metal wire 132 is not included in the cross section of the quartz crystal device 400 shown in FIG. 5, the metal wire 132 is shown by a dotted line in FIG. 5 for explanation.

  As illustrated in FIG. 5, the crystal device 400 includes a cover member 190 that covers the crystal device 100. In the quartz crystal device 400, the quartz crystal device 100 is covered with the cover member 190, so that the heat generated in the IC member 130 is confined in the cover member 190 so that the quartz crystal vibrating piece 140 can be efficiently heated.

  Further, the crystal device 400 can be formed as a temperature controlled crystal oscillator by disposing a temperature sensor (not shown) and a temperature control circuit (not shown) together with the crystal device 100 inside the cover member 190.

  As described above, the optimal embodiment of the present invention has been described in detail. However, as will be apparent to those skilled in the art, the present invention can be implemented with various modifications and variations within the technical scope thereof.

DESCRIPTION OF SYMBOLS 100, 200, 300, 400 ... Crystal device 110 ... Crystal oscillation element 111 ... Cavity 120 ... Thermal conductive adhesive 130 ... IC component 131 ... External electrode 132 ... Metal wire 140 ... Crystal oscillation piece 141 ... Excitation electrode 142 ... Extraction electrode 150 ... Insulating base plate 150a ... First layer 150b ... Second layer 150c ... Third layer 151 ... Recessed portion 152a ... Bonding surface 152b ... Mounting surface 153 ... Mounting portion 154 ... Connection electrode 155 ... Mounting terminal 159 ... Castration 160 ... Lid member 171 ... Sealing material 172 ... Conductive adhesive 173 ... Solder 180, 480 ... Wiring board 181 ... Non-conductive resin material 190 ... Cover member 481 ... First layer 482 ... Second layer

Claims (6)

An insulating base plate including a quartz crystal vibrating piece having an excitation electrode, a first surface on which the quartz crystal vibrating piece is arranged, and a second surface having a mounting terminal for mounting on the opposite side of the first surface; A metal lid member that hermetically seals the quartz crystal vibrating piece with the conductive base plate, and a quartz crystal vibrating element comprising:
An IC component having a top surface and a bottom surface having a plurality of external electrodes, and including an oscillation circuit that oscillates the crystal resonator element;
A heat-conducting adhesive containing a substance that easily conducts heat, and adhesively fixing the top surface of the IC component and the lid member;
Quartz device with.   The crystal device according to claim 1, wherein the IC component includes a temperature sensor that detects a temperature around the IC component, and a temperature compensation circuit that compensates a frequency temperature characteristic of the crystal resonator element based on the temperature. Furthermore, it has a wiring board having a connection wiring connected to the mounting terminal formed on the insulating base plate,
The crystal device according to claim 1, wherein the external electrode of the IC component is electrically connected to the wiring board through a metal wire.   The wiring board is a multi-layer board having a first layer and a second layer recessed from the first layer, the metal wire is connected to the first layer, and the mounting terminal is connected to the second layer. The crystal device according to claim 3 to be connected. A cover member that covers the metal wire, the IC component, and the crystal resonator,
The crystal device according to claim 3, wherein the cover member is bonded to the wiring board. A non-conductive resin material covering the metal wire, the IC component and the crystal unit;
The crystal device according to claim 3, wherein the resin material is bonded to the wiring board.