JP2015046430A - Vapor growth device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor growth device comprising a susceptor rotation mechanism for communicating a rotation drive force from a rotation drive unit installed outside a reaction chamber to a susceptor freely and rotatably holding a plurality of substrate holders via a susceptor rotation plate provided to contact with an outer peripheral part of the susceptor, and capable of preventing eccentricity of the susceptor even when vapor growth of a group-III nitride semiconductor requiring heating at 1000°C or more is performed by using a plurality of large substrates.SOLUTION: The vapor growth device has such a configuration that a susceptor rotation control tool consisting of a rotation body and a leg part freely and rotatably holding the rotation body is provided at a position where the rotation body contacts with an outer peripheral part of the susceptor at least when the substrate is heated.

Description

  The present invention relates to a vapor phase growth apparatus, and more particularly, to a gas phase growth apparatus that stably rotates a large susceptor in vapor phase growth using a plurality of large substrates such as a 4-inch substrate and a 6-inch substrate. The present invention relates to a phase growth apparatus.

As a method for growing a crystal film on a substrate, there is a chemical vapor deposition (CVD) method or the like, and a CVD method involving substrate heating is known as a thermal CVD method or the like. In recent years, vapor deposition performed by heating a substrate under high temperature conditions (for example, 1000 ° C. or more) is increasing, and vapor deposition of a group III nitride semiconductor for producing a blue or ultraviolet LED or a blue or ultraviolet laser diode. Is one of them.
For example, the growth of a group III nitride semiconductor crystal film was heated to a high temperature of 1000 ° C. or higher using an organic metal gas such as trimethylgallium, trimethylindium, or trimethylaluminum as a group III metal source and ammonia as a nitrogen source. In some cases, the thermal CVD method is used in which a crystal film is vapor-phase grown on a substrate such as silicon (Si), sapphire (Al ₂ O ₃ ), or gallium nitride (GaN).

In such vapor phase growth, by rotating the substrate during the vapor phase growth, it is possible to grow a crystal film having a uniform film thickness and quality within the substrate surface. In addition, by rotating and revolving the substrate during vapor phase growth, a uniform film thickness and film quality can be obtained not only within the same substrate surface but also between the substrates.
For example, in the vapor phase growth apparatus described in Patent Documents 1 to 3, as shown in FIG. 1, the rotary driving device 1 ′ installed outside the reaction vessel is provided at the center of the reaction vessel. A substrate rotating mechanism 4 that rotates a plurality of substrate holders 10 via a substrate holder rotating plate 11 and a susceptor rotating plate 4 provided in contact with the outer periphery of the susceptor from a rotation driver 1 installed outside the reaction vessel. The susceptor rotating mechanism for rotating the susceptor 2 that rotatably holds the plurality of substrate holders 10 is provided in a separate and independent configuration.

Here, it is essential that the vertical center axes of the substrate holder rotating plate 11 and the susceptor 2 coincide with each other, and they are set so as to substantially coincide with the vertical central axis of the reactor in the apparatus. Since the vapor phase growth apparatus of Patent Documents 1 to 3 has such a configuration, the ratio of the rotation and revolution of the substrate can be freely set, and the revolution axis of the substrate coincides with the rotation axis of the susceptor. Usually, it is possible to obtain a crystal film having a uniform film thickness and film quality without causing problems such as rotation failure in the rotation and revolution of the substrate.
JP 2012-227231 A JP 2013-4730 A JP 2013-16549 A JP 2012-162752 A

  When performing vapor phase growth using a plurality of large substrates such as a 4-inch substrate and a 6-inch substrate, the susceptor also becomes large and heavy, and as described in Patent Document 4, the susceptor is rotated by a central rotation shaft. However, this vapor phase growth apparatus has a drawback that a large load is applied to the rotating shaft. In this regard, in the vapor phase growth apparatus having a susceptor rotation mechanism as described in Patent Documents 1 to 3, a susceptor having a gear on the outer periphery is rotated via a susceptor rotation plate having a gear on the outer periphery ( As shown in FIG. 1), the above-described drawbacks were eliminated.

However, since the susceptor of the vapor phase growth apparatus described in Patent Documents 1 to 3 does not have a susceptor rotating shaft in the center portion and is supported by a base so as to be freely rotatable from below through a bearing, When vapor phase growth is performed at a temperature, there is a risk that the center of the susceptor may deviate from a predetermined central axis (hereinafter referred to as “eccentricity”) due to a difference in heating temperature of each part, a difference in coefficient of thermal expansion of each member, or the like. It was. If this eccentricity is large, the bearing ball may fly out, hindering the rotation of the susceptor and the substrate holder, and possibly causing damage to the members.
Therefore, the problem to be solved by the present invention is a vapor phase growth apparatus having a susceptor rotating mechanism as described in Patent Documents 1 to 3, and heating at 1000 ° C. or more using a plurality of large substrates. It is an object of the present invention to provide a vapor phase growth apparatus capable of preventing the susceptor from being decentered even when necessary vapor phase growth of a group III nitride semiconductor is performed.

  The inventors of the present invention have intensively studied to solve such problems, and as a result, in the vapor phase growth apparatus as described in Patent Documents 1 to 3, at least the substrate is heated in the radial direction by thermal expansion during heating. By providing a control tool that can contact the outer periphery of the expanded susceptor and control the rotation trajectory of the susceptor, even when vapor growth is performed at a high temperature using a large susceptor, the eccentricity of the susceptor Has been found to be able to prevent the vapor phase growth apparatus of the present invention.

  That is, the present invention rotates from a rotary drive installed outside the reaction vessel to a susceptor that rotatably holds a plurality of substrate holders via a susceptor rotating plate provided in contact with the outer periphery of the susceptor. A vapor phase growth apparatus having a susceptor rotating mechanism for transmitting force, the susceptor rotation control tool comprising a rotating body and a leg part rotatably holding the rotating body, the rotating body being a susceptor at least when heating the substrate The vapor phase growth apparatus is provided at a position in contact with the outer peripheral portion.

  In the vapor phase growth apparatus of the present invention, at least when the substrate is heated, the rotating body of the susceptor rotation control tool comes into contact with the outer periphery of the susceptor expanded by heating and controls the rotation path of the susceptor. When the group III nitride semiconductor is vapor-phase grown at a high temperature (over 1000 ° C.), the susceptor does not cause eccentricity even if the susceptor rises to a temperature close to the vapor-phase growth temperature. The rotation axis can be matched. As a result, it is possible to prevent the bearing ball from flying out, the susceptor and the substrate holder from rotating poorly, and the members from being damaged.

The present invention provides a rotational driving force to a susceptor that rotatably holds a plurality of substrate holders from a rotational drive installed outside a reaction vessel via a susceptor rotating plate provided in contact with the outer periphery of the susceptor. This is applied to a vapor phase growth apparatus provided with a susceptor rotating mechanism for transmitting Hereinafter, although this invention is demonstrated in detail based on FIGS. 1-5, this invention is not limited by these.
FIG. 1 is a vertical plane configuration diagram showing an example of the vapor phase growth apparatus of the present invention. FIG. 2 is a vertical plane configuration diagram showing an example of a susceptor rotation control tool used in the vapor phase growth apparatus of the present invention. FIG. 3 is a configuration diagram of a vertical surface showing an example of an end portion of the susceptor. FIG. 4 is a configuration diagram of a horizontal plane illustrating an example of an installation position of the susceptor rotation control tool. FIG. 5 is a configuration diagram of a horizontal plane showing an example of an installation position of the substrate holder rotating plate and the substrate holder.

  As shown in FIG. 1, the vapor phase growth apparatus of the present invention has a susceptor rotating plate 4 provided so as to be in contact with the outer peripheral portion 3 of the susceptor 2 from a rotary driver 1 installed outside the reaction vessel. 2 is a vapor phase growth apparatus including a susceptor rotating mechanism that transmits a rotational driving force to the susceptor 2 that rotatably holds a plurality of substrate holders 10, and includes the rotating body 6 and the rotating body 6 as shown in FIG. As shown in FIGS. 3 and 4, the susceptor rotation control tool 8 including the leg portion 7 that rotatably holds the susceptor is placed at a position where the rotating body 6 comes into contact with the outer peripheral portion 3 of the susceptor at least when the substrate is heated. A vapor phase growth apparatus is provided.

  In the present invention, the rotator 6 of the susceptor rotation control tool 8 is made of one or more materials selected from carbon, boron nitride, molybdenum disulfide, and tungsten disulfide because it becomes high temperature during vapor phase growth. It is preferable. However, the rotating body 6 is preferably not harder than the outer peripheral portion of the susceptor. If those having high hardness are used, the rotating body 6 and the outer periphery 3 of the susceptor may be damaged. The rotating body 6 is usually a disc or ring having no gears, and has a diameter of 5 to 100 mm and a thickness of 2 to 20 mm.

  The leg portion 7 of the susceptor rotation control tool 8 is not limited to the shape, size, material, number of members, etc. as long as the rotating body 6 can be rotatably held. One or a plurality of the above ones are used, and since it does not reach a high temperature unlike the rotating body 6, stainless steel can be used as the material. Further, as means for holding the rotating body rotatably on the leg portion, for example, a bearing can be used. At this time, if oil or grease is used, a gas containing oil is generated when the temperature is raised to a high temperature, which not only inhibits vapor phase growth but also may cause ignition, so these should not be used. preferable.

  The susceptor rotation control tool 8 may be provided at a position where the rotating body 6 is in contact with the outer periphery 3 of the susceptor at normal temperature. However, during heating, the susceptor rotation control tool 8 is moved radially from the susceptor 2 due to thermal expansion of the susceptor 2. Since a repulsive force directed to the outside is received, it is preferable that the position is not in contact with the outer peripheral portion 4 of the susceptor at room temperature. For example, when the susceptor rotation control tool 8 starts heating the substrate and reaches any temperature between 100 ° C. and 800 ° C., the rotator 6 comes into contact with the outer peripheral portion 3 of the susceptor due to thermal expansion of the susceptor 2 and rotates. It is preferable to set the body 6 to start rotating. When it is set to contact each other at a temperature exceeding 800 ° C., the effect of controlling the rotation trajectory of the susceptor to prevent the susceptor from being eccentric is reduced.

  Further, as the position on the plane of the susceptor rotation control tool 8, the contact points of the plurality of rotating bodies 6 and the outer peripheral portion 3 including the single susceptor rotating plate 4 are concentric circles as shown in FIG. It is preferable to provide them at positions at equal intervals on the top. The number of installed susceptor rotation control tools 8 is usually 3 to 8. Moreover, as shown in FIG. 3, it is preferable to set the height and thickness of the rotary body 6 so as to be the same position and the same thickness as the outer peripheral portion 3 of the susceptor. With such a configuration, it is possible to smoothly control the rotation trajectory of the susceptor. The rotating body 6 of the susceptor rotation control tool 8 is usually configured to rotate in the opposite direction to the susceptor when it contacts the outer periphery 3 of the susceptor. The outer peripheral portion of the rotator normally has no irregularities, but can also be provided with irregularities that mesh with gears provided on the outer peripheral portion of the susceptor.

  As shown in FIG. 1, the susceptor rotating mechanism of the vapor phase growth apparatus according to the present invention includes a susceptor rotating plate 4 provided in contact with the outer peripheral portion 3 of the susceptor from a rotary driver 1 installed outside the reaction vessel. Thus, the susceptor 2 is rotated. As shown in FIG. 4, gears that mesh with each other are provided on the outer peripheral portion 3 of the susceptor and the outer peripheral portion of the susceptor rotating plate 4, whereby the rotational driving force from the rotary driver 1 is transmitted to the susceptor 2. Is done. As shown in FIG. 3, the bearing ball 21 circulates and rotates on a rotating track composed of an annular bearing groove sandwiched between the susceptor 2 and the base 22 and holds the susceptor 2 rotatably.

  In the group III nitride semiconductor vapor phase growth apparatus, carbon, pyrolytic graphite (PG), glassy carbon (GC), or the like is used for a portion that comes into contact with a high temperature corrosive gas such as a susceptor and a base. Materials or carbon materials coated with ceramic materials are often used. Further, as a material for the bearing ball sandwiched between these materials, ceramic materials such as alumina are frequently used from the viewpoint of slidability and heat resistance. When vapor phase growth is performed using such a material with a large susceptor, the thermal expansion coefficient of these materials is different (usually, the carbon-based material has a higher thermal expansion coefficient than the ceramic-based material). As the bearing portion approaches the vapor phase growth temperature, the gap between the bearing grooves becomes larger, which is one cause of the susceptor becoming eccentric. In the present invention, for example, the eccentricity of the susceptor generated in this way is prevented by controlling the rotation trajectory of the susceptor from the outside.

  For the vapor phase growth apparatus of the present invention, those conventionally used can be used for configurations other than those described above. For example, as shown in FIG. 1, the reaction furnace 20 is usually formed from the susceptor 2 and the facing surface 17 of the ceptor, and the vapor phase growth reaction is performed in the reaction furnace 20. The vapor phase growth apparatus of FIG. 1 is configured to supply the source gas from the central part of the reaction furnace and discharge the gas from the peripheral part to the outside. For example, the present invention can be applied to a vapor phase growth apparatus in which a source gas is supplied from one end of a reaction furnace and a gas after reaction is discharged to the outside from the other end.

  Inside the reaction vessel 23, there are a substrate 9 for vapor-phase growth of a crystal film, a substrate holder 10 for holding the substrate 9, a substrate holder rotating plate 11 for transmitting a rotational driving force to the plurality of substrate holders 10, a soaking plate. 13, a heater 14 for heating the substrate 9, a plurality of substrate holders 10, and a disk-like or ring-shaped susceptor 2 that rotatably holds a substrate holder rotating plate 11 by bearings, a source gas introduction unit 15, a reaction gas discharge unit 18 and the like, and these members are housed in a reaction vessel 23 having a disk shape and sealed.

  The substrate holder 10 held rotatably by the susceptor 2 is rotated by receiving a rotational driving force from the substrate holder rotation driver 1 '. That is, the rotational driving force from the substrate holder rotational drive 1 ′ is first transmitted to the substrate holder rotational driving shaft 12 that is rotatably sealed with respect to the reaction vessel 23 by means such as a magnetic fluid seal. The substrate holder rotation drive shaft 12 is installed in the reaction vessel 23 via a bellows or the like so that the substrate holder rotation drive shaft 12 can move up and down. When the claw 19 of the substrate holder rotation drive shaft 12 is inserted into the insertion port of the substrate holder rotation plate 11, the rotation drive force is transmitted to the substrate holder rotation plate 11 held rotatably by the susceptor 2. Then, as shown in FIG. 5, the gear provided on the outer periphery of the substrate holder rotating plate 11 and the gear provided on the outer periphery of each substrate holder 10 mesh with each other, so that the rotational driving force is transmitted to each substrate holder 10. Each substrate 9 rotates.

  Further, the substrate 9 rotates by revolution in addition to rotation. As described above, the susceptor 2 that is rotatably held by the base 22 rotates by receiving the rotational driving force from the susceptor rotation driver 1. That is, the susceptor rotation drive shaft 5 drives the susceptor rotation through the susceptor rotation drive shaft 5 that is rotatably sealed so that the sealing performance of the reaction vessel 23 is not impaired by means such as a magnetic fluid seal. It is transmitted to the susceptor rotating plate 4 fixed to the susceptor side tip of the shaft 5. The outer periphery 3 of the susceptor 2 and the outer periphery of the susceptor rotating plate 4 are provided with gears. When these gears mesh with each other, the rotational driving force from the susceptor rotation driver 1 is transmitted to the susceptor 2, and each substrate 9 revolves.

  A source gas pipe 16 is provided at the center of the reaction furnace 20, and the source gas is blown radially from the source gas introduction unit 15 and supplied horizontally to the crystal growth surface of the substrate 9. The vapor phase growth reaction is performed by supplying the source gas from the source gas introduction unit 15 while heating the substrate 9 via the soaking plate 13 by the heater 14 in the reaction furnace 20. A crystal film is formed on the substrate. A part of the raw material gas used for the vapor phase growth reaction is discharged from the reaction gas discharge unit 18 after being partially used for the reaction.

  During vapor phase growth, the substrate 9 is preferably always rotated and revolved by the rotation of the substrate holder 10 and the susceptor 2. The rotation direction and rotation speed of the substrate holder 10 and the susceptor 2 can be arbitrarily set by changing the rotation direction and rotation speed of the substrate holder rotation driver 1 ′ and the susceptor rotation driver 1, respectively. In order to obtain a uniform film thickness and film quality between the substrates, the substrate holders 10 are arranged on the same circumference with the source gas introduction part 15 as the center, and the distance from the source gas introduction part 15 is made equal. Is preferred.

  EXAMPLES Next, although an Example demonstrates this invention concretely, this invention is not limited by this.

[Example 1]
(Production of susceptor rotation control tool)
As shown in FIG. 2, five susceptor rotation control tools including a disk-shaped rotating body and a leg portion that rotatably holds the rotating body were manufactured. The rotating body was a carbon disk having an outer diameter of 80.5 mm and a thickness of 10.0 mm, and the leg part was a SUS cylinder having an outer diameter of 53.0 mm and a height of 67.0 mm. Further, as a means for rotatably supporting the rotating body, a structure in which a bearing ball made of alumina having a diameter of 5 mm is sandwiched between carbon shaft raceway plates is incorporated in the leg portion.

(Production of vapor phase growth equipment)
A vapor phase growth apparatus as shown in FIG. 1 was manufactured as follows.
A substrate holder rotating plate (SiC coated carbon, diameter 255 mm, thickness 8.5 mm) is placed on a base (SiC coated) via a bearing portion in which a bearing ball (alumina, 4 mm diameter spherical shape) is housed in a bearing ball groove portion. (Made of carbon, diameter 240 mm, thickness 5 mm). Further, the base was held on an annular susceptor (made of SiC coated carbon, outer diameter 720 mm (including gear portion), inner diameter 210 mm, thickness 11 mm, capable of holding six substrate holders). In addition, six substrate holders were rotatably held on the susceptor via bearings in the same manner as described above.

  Next, the above-mentioned members and the like were placed in the reaction vessel. At this time, after adjusting the center position of the susceptor to be within 0.2 mm from the center position of the reaction vessel, the center position of the substrate holder rotating plate and the center position of the substrate holder rotating drive shaft are within 0.2 mm. It adjusted so that it might become. Furthermore, adjustment was performed using a dial gauge so that the center position of the substrate holder rotation drive shaft and the center position of the susceptor were within 0.2 mm. Adjustment is performed by fixing the dial gauge in one place of the susceptor and measuring the distance between the reference point and the substrate holder rotation drive shaft while rotating the susceptor, and the change in the distance due to the movement of the reference point is reduced. It was done by doing so. (See Japanese Patent Application No. 2013-107254)

Next, five susceptor rotation control tools were installed at equal intervals at positions on the outer periphery side of the susceptor as shown in FIG. Further, at the time of contact, the outer vertical surface of the rotating body of the susceptor rotation control tool efficiently contacts the susceptor outer vertical surface as shown in FIG. The gap between the rotating body of the susceptor rotation control tool and the outer periphery of the susceptor (the tip of the gear) was set to 2.0 mm at room temperature (25 ° C.). This gap is calculated from the coefficient of thermal expansion of each member and is a value at which the outer periphery of the rotating body and the susceptor come into contact when the temperature is raised to 1200 ° C.
In addition, the vapor phase growth apparatus as shown in FIG. 1 was completed by installing a raw material gas introduction section, a susceptor facing, and the like.

(Vapor phase growth experiment)
Using such a vapor phase growth apparatus, gallium nitride (GaN) was grown on the surface of the substrate. First, the substrates (diameter 6 inches, sapphire) were set one by one on the substrate holder, and rotation (10 rpm) and revolution (1 rpm) of the substrate were started. It should be noted that the rotation and revolution of the substrate were continued at these speeds until the internal temperature dropped to near room temperature after all the growth was completed, and the inside of the reaction vessel was kept at atmospheric pressure. Thereafter, the temperature of the substrate was raised to 1050 ° C. while flowing hydrogen from the source gas introduction part, and the substrate was annealed.

  Subsequently, the temperature of the heater is lowered to 510 ° C., and a buffer layer having a thickness of 20 nm made of GaN is grown on the sapphire substrate using trimethyl gallium and ammonia as source gases and hydrogen as a carrier gas. After the growth, only the supply of trimethylgallium was stopped, and the temperature of the heater was raised to 1050 ° C. Thereafter, in addition to trimethylgallium and ammonia, hydrogen and nitrogen were supplied as carrier gases from the source gas introduction section, and undoped GaN was grown for 1 hour.

  After growing GaN as described above, the temperature of the heater was lowered to cool the interior to near room temperature, and then the substrate revolution was stopped. From the start to the end of the rotation and revolution of the substrate, the substrate holder rotation drive and the susceptor rotation drive operated normally. Thereafter, the reaction vessel was released and the substrate was taken out, and formation of GaN was confirmed on the substrate. In addition, when each member in the reaction vessel was visually inspected, there was no abnormality such as corrosion, breakage, etc., and the bearing ball did not fly out, and all the bearing balls were held on the bearing groove members. It was the state of. Further, the outer periphery of the susceptor rotation control tool and the outer periphery of the susceptor (the tip of the gear) maintain a gap of 2.0 mm. Also, the center position of the substrate holder rotating plate, the center position of the reaction vessel, the substrate holder rotating plate When the center position and the center position of the substrate holder rotation drive shaft were measured, both were within 0.2 mm.

[Examples 2 to 10]
Using the same vapor phase growth apparatus as in Example 1 in which the susceptor rotation control tool was installed, the same vapor phase growth experiment as in Example 1 was performed nine times in total. As a result, formation of GaN on the substrate was confirmed in all vapor phase growth experiments. In all the vapor phase growth experiments, there was no abnormality such as corrosion and breakage, and no bearing ball jumped out, and all the bearing balls were held on the bearing groove members. Furthermore, in any vapor phase growth experiment, the gap between the rotating body of the susceptor rotation control tool and the outer periphery of the susceptor (the tip of the gear), the center position of the substrate holder rotating plate and the center position of the reaction vessel, the center of the substrate holder rotating plate The position and the center position of the substrate holder rotation drive shaft were within a predetermined range even after the vapor phase growth experiment was completed.

[Comparative Examples 1 to 10]
In the production of the vapor phase growth apparatus of Example 1, the vapor phase growth apparatus was produced in the same manner as in Example 1 except that the susceptor rotation control tool was not installed. Using this vapor phase growth apparatus, vapor phase growth experiments similar to those in Example 1 were performed 10 times in total. As a result, 9 times out of 10 times were good for any test items as in the example. However, one out of 10 times, the vapor phase growth experiment was stopped because the alarm device of the susceptor rotation driver detected an abnormality during the growth of undoped GaN. The reaction vessel was cooled to room temperature and released, and each member was visually inspected. There was no abnormality such as corrosion or breakage, but one bearing ball to support the susceptor was released. I found out that it was happening.

  As in the above embodiments, the vapor phase growth apparatus of the present invention does not cause eccentricity of the susceptor even when a large-scale susceptor is used for vapor phase growth of a group III nitride semiconductor at a high temperature. It is possible to prevent the bearing ball from jumping out.

  The vapor phase growth apparatus of the present invention is suitable, for example, as a group III nitride semiconductor vapor phase growth apparatus used for manufacturing blue or ultraviolet light emitting diodes or laser diodes.

Configuration diagram of a vertical surface showing an example of a vapor phase growth apparatus of the present invention Configuration diagram of a vertical plane showing an example of a susceptor rotation control tool used in the vapor phase growth apparatus of the present invention Configuration diagram of the vertical plane showing an example of the end of the susceptor Configuration diagram of horizontal plane showing an example of installation position of susceptor rotation control tool Horizontal plane configuration diagram showing an example of the installation position of the substrate holder rotating plate and substrate holder

DESCRIPTION OF SYMBOLS 1 Susceptor rotation drive 1 'Substrate holder rotation drive 2 Susceptor 3 Outer part of susceptor 4 Susceptor rotation plate 5 Susceptor rotation drive shaft 6 Rotation body of rotation control tool 7 Leg part of rotation control tool 8 Rotation control tool 9 Substrate 10 Substrate Holder 11 Substrate holder rotating plate 12 Substrate holder rotation drive shaft 13 Heat equalizing plate 14 Heater 15 Raw material gas introduction part 16 Raw material gas pipe 17 Face to face of susceptor 18 Reactive gas discharge part 19 Claw 20 Reactor 21 Bearing ball 22 Base 23 Reaction vessel 24 Flow path through which refrigerant flows 25 Gear section

Claims (6)

  A susceptor that transmits a rotational driving force from a rotary drive installed outside the reaction vessel to a susceptor that rotatably holds a plurality of substrate holders via a susceptor rotary plate that is provided in contact with the outer periphery of the susceptor. A vapor phase growth apparatus provided with a rotation mechanism, wherein a susceptor rotation control tool comprising a rotator and a leg portion that rotatably holds the rotator is contacted with an outer periphery of the susceptor at least when the substrate is heated. A vapor phase growth apparatus provided at such a position.   When the rotating body of the susceptor rotation control tool starts heating the substrate and reaches any temperature between 100 ° C. and 800 ° C., the susceptor rotation expansion is set to contact the outer periphery of the susceptor and start rotating. The vapor phase growth apparatus according to claim 1.   2. The vapor phase growth apparatus according to claim 1, wherein the rotating body of the plurality of susceptor rotation control tools and one susceptor rotating plate are provided so that the contact points with the outer periphery of the susceptor are equidistantly spaced on a concentric circle.   The vapor phase growth apparatus according to claim 1, wherein the rotating body of the susceptor rotation control tool has a disk shape or an annular shape without a gear.   The vapor phase growth apparatus according to claim 1, wherein the rotating body of the susceptor rotation control tool is held by a leg portion via a bearing.   2. The vapor phase growth apparatus according to claim 1, wherein the rotating body of the susceptor rotation control tool is made of one or more materials selected from carbon, boron nitride, molybdenum disulfide, and tungsten disulfide.

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