JP2015041403A5 - - Google Patents

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Publication number
JP2015041403A5
JP2015041403A5 JP2014170690A JP2014170690A JP2015041403A5 JP 2015041403 A5 JP2015041403 A5 JP 2015041403A5 JP 2014170690 A JP2014170690 A JP 2014170690A JP 2014170690 A JP2014170690 A JP 2014170690A JP 2015041403 A5 JP2015041403 A5 JP 2015041403A5
Authority
JP
Japan
Prior art keywords
cross
track
sensor stack
anisotropy
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014170690A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015041403A (ja
Filing date
Publication date
Priority claimed from US13/975,053 external-priority patent/US9508366B2/en
Application filed filed Critical
Publication of JP2015041403A publication Critical patent/JP2015041403A/ja
Publication of JP2015041403A5 publication Critical patent/JP2015041403A5/ja
Pending legal-status Critical Current

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JP2014170690A 2013-08-23 2014-08-25 リーダー構造 Pending JP2015041403A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/975,053 2013-08-23
US13/975,053 US9508366B2 (en) 2013-08-23 2013-08-23 Reader structure

Publications (2)

Publication Number Publication Date
JP2015041403A JP2015041403A (ja) 2015-03-02
JP2015041403A5 true JP2015041403A5 (enExample) 2015-08-20

Family

ID=52480168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014170690A Pending JP2015041403A (ja) 2013-08-23 2014-08-25 リーダー構造

Country Status (4)

Country Link
US (1) US9508366B2 (enExample)
JP (1) JP2015041403A (enExample)
KR (1) KR101823489B1 (enExample)
CN (1) CN104424959B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9679589B2 (en) * 2015-09-11 2017-06-13 Seagate Technology Llc Magnetoresistive sensor with enhanced uniaxial anisotropy

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4956736A (en) * 1988-12-16 1990-09-11 Eastman Kodak Company Thin film magnetic element having a rhombic shape
US5379172A (en) * 1990-09-19 1995-01-03 Seagate Technology, Inc. Laminated leg for thin film magnetic transducer
JP2683503B2 (ja) * 1993-09-02 1997-12-03 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁性膜構造
JP3075253B2 (ja) * 1998-03-31 2000-08-14 日本電気株式会社 スピンバルブ型感磁素子及びこれを用いた磁気ヘッド並びに磁気ディスク装置
JP3623418B2 (ja) * 1999-12-06 2005-02-23 アルプス電気株式会社 スピンバルブ型磁気抵抗効果素子及びそれを備えた薄膜磁気へッドとそれらの製造方法
US6809900B2 (en) * 2001-01-25 2004-10-26 Seagate Technology Llc Write head with magnetization controlled by spin-polarized electron current
US6765770B2 (en) * 2001-10-11 2004-07-20 Storage Technology Corporation Apparatus and method of making a stabilized MR/GMR spin valve read element using longitudinal ferromagnetic exchange interactions
US6965494B2 (en) * 2002-05-13 2005-11-15 Robert Owen Campbell Magnetic recording head having a first pole for generating an easy axis field and an auxiliary pole for generating a first auxiliary hard axis field that opposes an initial hard axis field
US7330339B2 (en) * 2003-07-25 2008-02-12 Hitachi Global Storage Technologies Netherlands B.V. Structure providing enhanced self-pinning for CPP GMR and tunnel valve heads
JP5095076B2 (ja) * 2004-11-09 2012-12-12 株式会社東芝 磁気抵抗効果素子
US7382586B2 (en) * 2005-03-31 2008-06-03 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer
US7460343B2 (en) * 2005-03-31 2008-12-02 Hitachi Global Storage Technologies Netherlands B.V. Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
US7443639B2 (en) * 2005-04-04 2008-10-28 International Business Machines Corporation Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials
JP2007323725A (ja) * 2006-05-31 2007-12-13 Toshiba Corp 垂直通電型磁気ヘッドおよびそれを用いた磁気ディスク装置
US8023230B2 (en) * 2008-10-27 2011-09-20 Tdk Corporation Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers
US8405931B2 (en) * 2009-06-25 2013-03-26 Seagate Technology Llc Magnetic main write pole
US8742518B2 (en) * 2011-03-31 2014-06-03 Seagate Technology Llc Magnetic tunnel junction with free layer having exchange coupled magnetic elements
US8400738B2 (en) 2011-04-25 2013-03-19 Seagate Technology Llc Magnetic element with dual magnetic moments
US8675315B2 (en) * 2011-07-29 2014-03-18 Seagate Technology Llc Magnetic sensor with anisotropic liner
US8755154B2 (en) * 2011-09-13 2014-06-17 Seagate Technology Llc Tuned angled uniaxial anisotropy in trilayer magnetic sensors
US8837092B2 (en) 2012-06-29 2014-09-16 Seagate Technology Llc Magnetic element with biasing structure distal the air bearing surface

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