JP2015031854A - Interference filter, optical filter device, optical module, electronic equipment, and method for manufacturing interference filter - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an interference filter in which wiring reliability can be improved even when an electrode is disposed on a reflection film.SOLUTION: A wavelength variable interference filter 5 includes a pair of reflection films 54, 55 opposing to each other, and a second insulating film 572 covering the movable reflection film 55. The second insulating film 572 includes an interference region 572A overlapping the movable reflection film 55 and an extending region 572B that is continuous to the interference region 572A and does not overlap the movable reflection film 55. The surface of the interference region 572A and the surface of the extending region 572B are on the same plane and parallel to the movable reflection film 55.

Description

  The present invention relates to an interference filter, an optical filter device, an optical module, an electronic apparatus, and a method for manufacturing the interference filter.

Conventionally, there has been known an interference filter that has a pair of reflective films facing each other and selects and emits light of a predetermined wavelength from light to be measured by changing the distance (gap size) between the reflective films. (For example, refer to Patent Document 1).
In the interference filter of Patent Document 1, an electrode is disposed on each reflective film, and a gap dimension between the reflective films can be changed by applying a voltage between the electrodes. In addition, a dielectric multilayer film is used as the reflection film, and light having a small half width (high resolution) can be transmitted.

Japanese Patent Application Laid-Open No. 11-142752

By the way, in the interference filter, in order to remove the electric charge held on the reflection film, a configuration in which an electrode for preventing charging is provided on the reflection film, or an electrode for detecting capacitance is arranged on each reflection film, A configuration in which electrodes are provided on a reflective film, such as a configuration for detecting the capacitance between these electrodes, has been proposed. In this case, an extraction electrode drawn out of the reflection film is formed from the electrode on the reflection film, and electrical connection is made to the circuit from a terminal provided on the extraction electrode.
However, when an electrode or an extraction electrode is formed on the end surface of the reflection film (a side surface orthogonal to the upper surface facing the other reflection film) by vapor deposition or sputtering, for example, the electrode or the extraction electrode is disconnected at the end surface. There is. In this case, there is a problem that the electrical continuity cannot be properly obtained with respect to the electrode on the reflective film, and the wiring reliability is lowered. In particular, when a dielectric multilayer film is used as the reflective film as in Patent Document 1, the thickness dimension is larger than that of a single-layer reflective film, and therefore the risk of disconnection is further increased.

  An object of the present invention is to provide an interference filter, an optical filter device, an optical module, an electronic device, and an interference filter manufacturing method capable of improving wiring reliability even when an electrode is provided on a reflective film.

  The interference filter of the present invention includes a pair of reflective films facing each other and an insulating film covering at least one of the pair of reflective films, and the insulating film is a plane viewed from the thickness direction of the reflective film. In view, it includes a first region that overlaps the reflective film, and a second region that is continuous with the first region and does not overlap the reflective film, and the surface of the first region is a flat surface parallel to the reflective film. And the surface of the second region is flush with the surface of the first region.

In the present invention, the insulating film is provided to cover the reflective film, and includes a first region that overlaps the reflective film and a second region that is continuous with the first region. The surface of the second region is flush with the surface of the first region.
For this reason, for example, when an antistatic electrode or a capacitance detection amount electrode is formed in the first region of the insulating film, and an extraction electrode extending from the electrode to the second region is formed, the formation position of the extraction electrode is set. There is no level difference and the risk of disconnection can be reduced. As a result, it is possible to appropriately establish electrical continuity with respect to the electrode in the first region via the extraction electrode, and the wiring reliability can be improved.

  In the interference filter according to the aspect of the invention, the interference filter includes a pair of reflective films facing each other and an insulating film covering at least one of the pair of reflective films, and the insulating film is a plane viewed from the thickness direction of the reflective film. In view, it includes a first region that overlaps the reflective film, and a second region that is continuous with the first region and does not overlap the reflective film, and the surface of the first region is a flat surface parallel to the reflective film. The surface of the second region includes an inclined surface that is continuous with the outer peripheral edge of the surface of the first region and is inclined with respect to the surface of the first region.

In the present invention, the insulating film is provided to cover the reflective film, and includes a first region that overlaps the reflective film and a second region that is continuous with the first region. The surface of the second area is inclined with respect to the surface of the first area.
Here, as the second region in the present invention, in addition to the configuration in which the inclined surface continues from the outer peripheral end of the surface of the first region, the surface is flush with the surface of the first region by a predetermined distance from the outer peripheral end of the first region. The flat surface which becomes becomes continuous, and the inclined surface continues from the outer peripheral end of this flat surface. Moreover, the inclined surface includes an inclined plane inclined at an obtuse angle with respect to the surface of the first region, in addition to a gently inclined inclined surface.
Even in such a configuration, when the electrode is formed from the first region to the second region of the reflective film, the electrode is formed along the inclined surface, for example, the end surface of the reflective film (facing the other reflective film) The risk of disconnection can be reduced as compared with the case of forming electrodes on the side surface orthogonal to the upper surface. Therefore, similarly to the above-described invention, appropriate electrical continuity can be established with respect to the electrode in the first region via the extraction electrode, and the wiring reliability can be improved.

In the interference filter according to the aspect of the invention, it is preferable that an end of the inclined surface on the first region side is a curved surface having a center of curvature inside the insulating film.
According to the present invention, the end of the inclined surface on the first region side is curved into a convex curved surface. That is, the end of the second region on the first region side is inclined as a gentle curved surface from the surface (flat surface) of the first region. For this reason, when an electrode is formed from the first region to the second region, there is no surface where the angle changes abruptly, such as steps or corners, and the risk of disconnection can be more reliably reduced.

In the interference filter according to the aspect of the invention, it is preferable that the inclined surface is a curved surface formed by wet etching.
In the present invention, the inclined surface in the second region is formed by the etching solution flowing into the back side of the mask region (side etching) when wet etching is performed. In such side etching, the entire surface becomes a gently curved surface, and the risk of disconnection when an electrode is formed can be more effectively reduced as in the above-described invention.

In the interference filter according to the aspect of the invention, it is preferable that the reflective film is formed of a dielectric multilayer film.
In the present invention, the reflective film is composed of a dielectric multilayer film. In the interference filter using such a dielectric multilayer film, the half-value width is small in the spectrum of the emitted light, and light having a desired wavelength can be emitted with high resolution. In the reflective film using such a dielectric multilayer film, the thickness dimension becomes large, but by providing the insulating film as described above, even if an electrode is provided on the reflective film, the thickness is appropriately set for the electrode. Electrical conduction can be achieved.

In the interference filter according to the aspect of the invention, it is preferable that the insulating film is provided for each of the pair of reflective films.
In the case where the electrode is formed only on one of the pair of reflective films, the insulating film as described above may be provided only on one side where the electrode is provided. On the other hand, by setting the insulating film as described above for both the pair of reflective films as in the present invention, electrodes can be formed for both reflective films. The wiring reliability of the electrodes can be improved.

An optical filter device of the present invention includes a pair of reflective films facing each other, an interference filter having an insulating film covering at least one of the pair of reflective films, and a housing for housing the interference filter. The insulating film includes a first region that overlaps the reflective film in a plan view as viewed from the thickness direction of the reflective film, and a second region that is continuous with the first region and does not overlap the reflective film, The surface of the first region is a flat surface parallel to the reflective film, and the surface of the second region is flush with the surface of the first region.
In the present invention, when an electrode is formed on the reflective film as in the above-described invention, the wiring reliability can be improved by forming an extraction electrode extending from the electrode onto the second region.
In addition, since the interference filter is housed in the housing, for example, adhesion of foreign matter to the reflective film can be suppressed, and the interference filter can be protected from impact and the like.

An optical filter device of the present invention includes a pair of reflective films facing each other, an interference filter having an insulating film covering at least one of the pair of reflective films, and a housing for housing the interference filter. The insulating film includes a first region that overlaps the reflective film in a plan view as viewed from the thickness direction of the reflective film, and a second region that is continuous with the first region and does not overlap the reflective film, The surface of the first region is a flat surface parallel to the reflective film, and the surface of the second region is continuous with the outer peripheral edge of the surface of the first region and is inclined with respect to the surface of the first region. An inclined surface is included.
In the present invention, when an electrode is formed on the reflective film as in the above-described invention, the wiring reliability can be improved by forming an extraction electrode extending from the electrode onto the second region.
In addition, since the interference filter is housed in the housing, for example, adhesion of foreign matter to the reflective film can be suppressed, and the interference filter can be protected from impact and the like.

The optical module of the present invention includes a pair of reflecting films facing each other, an interference filter having an insulating film covering at least one of the pair of reflecting films, and a light receiving unit that receives light emitted from the interference filter And the insulating film has a first region that overlaps the reflective film and a second region that is continuous with the first region and does not overlap the reflective film in a plan view as viewed from the thickness direction of the reflective film. The surface of the first region is a flat surface parallel to the reflective film, and the surface of the second region is flush with the surface of the first region.
In the present invention, when an electrode is formed on the reflective film as in the above-described invention, the wiring reliability can be improved by forming an extraction electrode extending from the electrode onto the second region. Therefore, also in the optical module having the interference filter, the wiring reliability can be improved.

The optical module of the present invention includes a pair of reflecting films facing each other, an interference filter having an insulating film covering at least one of the pair of reflecting films, and a light receiving unit that receives light emitted from the interference filter And the insulating film has a first region that overlaps the reflective film and a second region that is continuous with the first region and does not overlap the reflective film in a plan view as viewed from the thickness direction of the reflective film. The surface of the first region is a flat surface parallel to the reflective film, the surface of the second region is continuous with the outer peripheral edge of the surface of the first region, and the surface of the first region is It is characterized by including the inclined surface which inclines with respect to it.
In the present invention, when an electrode is formed on the reflective film as in the above-described invention, the wiring reliability can be improved by forming an extraction electrode extending from the electrode onto the second region. Therefore, also in the optical module having the interference filter, the wiring reliability can be improved.

An electronic apparatus of the present invention includes a pair of reflective films facing each other, an interference filter having an insulating film covering at least one of the pair of reflective films, and a control unit that controls the interference filter, The insulating film includes a first region that overlaps the reflective film and a second region that is continuous with the first region and does not overlap the reflective film in a plan view as viewed from the thickness direction of the reflective film, The surface of one region is a flat surface parallel to the reflective film, and the surface of the second region is flush with the surface of the first region.
In the present invention, when an electrode is formed on the reflective film as in the above-described invention, the wiring reliability can be improved by forming an extraction electrode extending from the electrode onto the second region. Therefore, the wiring reliability can be improved also in the electronic apparatus having the interference filter.

An electronic apparatus of the present invention includes a pair of reflective films facing each other, an interference filter having an insulating film covering at least one of the pair of reflective films, and a control unit that controls the interference filter, The insulating film includes a first region that overlaps the reflective film and a second region that is continuous with the first region and does not overlap the reflective film in a plan view as viewed from the thickness direction of the reflective film, The surface of one region is a flat surface parallel to the reflective film, and the surface of the second region is continuous with the outer peripheral edge of the surface of the first region and is inclined with respect to the surface of the first region. It is characterized by including a surface.
In the present invention, when an electrode is formed on the reflective film as in the above-described invention, the wiring reliability can be improved by forming an extraction electrode extending from the electrode onto the second region. Therefore, the wiring reliability can be improved also in the electronic apparatus having the interference filter.

An interference filter manufacturing method of the present invention includes a reflective film forming step of forming a reflective film on a substrate, and an insulating film forming step of forming an insulating film covering the reflective film on the substrate. In the forming step, the insulating film including a first region that overlaps the reflective film and a second region that does not overlap the reflective film continuously to the first region in a plan view as viewed from the thickness direction of the reflective film. It is characterized in that it is formed and the surface of the insulating film is polished and flattened.
In the present invention, after forming the insulating film so as to cover the reflective film, the surface thereof may be polished, and the above-described interference filter having high wiring connectivity can be easily manufactured.

An interference filter manufacturing method of the present invention includes a reflective film forming step of forming a reflective film on a substrate, and an insulating film forming step of forming an insulating film covering the reflective film on the substrate. In the forming step, the insulating film including a first region that overlaps the reflective film and a second region that does not overlap the reflective film continuously to the first region in a plan view as viewed from the thickness direction of the reflective film. Forming and masking the first region on the surface of the insulating film and a position outside a predetermined dimension from the edge of the first region, and performing wet etching to perform a predetermined etching from the edge of the first region. The second region having an inclined surface inclined with respect to the surface of the first region is formed by side-etching a region up to a position outside the dimension.
In the present invention, an interference filter having high wiring connectivity as described above can be easily manufactured by forming an insulating film so as to cover the reflective film and then performing wet etching.

1 is a block diagram showing a schematic configuration of a spectrometer according to a first embodiment. The top view which shows schematic structure of the wavelength variable interference filter of 1st embodiment. Sectional drawing of the AA line in FIG. Sectional drawing of the BB line in FIG. The flowchart which shows the manufacturing process of the wavelength variable interference filter of 1st embodiment. Schematic which shows each state of the fixed substrate formation process of 1st embodiment. Schematic which shows each state of the movable substrate formation process of 1st embodiment. Sectional drawing which shows schematic structure of the wavelength variable interference filter of 2nd embodiment. The figure for demonstrating the formation method of the 1st insulating film of 2nd embodiment. Sectional drawing which shows schematic structure of the optical filter device which concerns on 3rd embodiment. The figure which shows schematic structure of the wavelength variable interference filter in another modification. FIG. 6 is a block diagram illustrating a schematic configuration of a color measurement device that is another example of the electronic apparatus of the invention. Schematic of the gas detection apparatus which is another example of the electronic device of this invention. The block diagram which shows the control system of the gas detection apparatus of FIG. The block diagram which shows schematic structure of the food analyzer which is another example of the electronic device of this invention. The schematic diagram which shows schematic structure of the spectroscopic camera which is another example of the electronic device of this invention.

[First embodiment]
Hereinafter, a first embodiment according to the present invention will be described with reference to the drawings.
[Configuration of Spectrometer]
FIG. 1 is a block diagram showing a schematic configuration of a spectrometer according to the present invention.
The spectroscopic measurement device 1 is an example of the electronic apparatus of the present invention, and is a device that analyzes the light intensity of each wavelength in the measurement target light reflected by the measurement target X and measures the spectral spectrum. In this embodiment, an example of measuring the measurement target light reflected by the measurement target X is shown. However, when a light emitter such as a liquid crystal panel is used as the measurement target X, the light emitted from the light emitter is measured. The target light may be used.
As shown in FIG. 1, the spectrometer 1 includes an optical module 10 and a control unit 20 that processes a signal output from the optical module 10.

[Configuration of optical module]
The optical module 10 includes a variable wavelength interference filter 5, a detector 11, an IV converter 12, an amplifier 13, an A / D converter 14, and a drive control unit 15.
The optical module 10 guides the measurement target light reflected by the measurement target X to the wavelength tunable interference filter 5 through an incident optical system (not shown), and transmits the light transmitted through the wavelength tunable interference filter 5 to the detector 11 (light receiving unit). ). The detection signal output from the detector 11 is output to the control unit 20 via the IV converter 12, the amplifier 13, and the A / D converter 14.

[Configuration of wavelength tunable interference filter]
Next, the wavelength variable interference filter 5 incorporated in the optical module 10 will be described.
FIG. 2 is a plan view showing a schematic configuration of the variable wavelength interference filter 5. 3 is a cross-sectional view taken along line AA in FIG. 2, and FIG. 4 is a cross-sectional view taken along line BB in FIG.
The wavelength tunable interference filter 5 includes a fixed substrate 51 and a movable substrate 52, as shown in FIGS. The fixed substrate 51 and the movable substrate 52 are each formed of, for example, various glasses such as soda glass, crystalline glass, quartz glass, lead glass, potassium glass, borosilicate glass, and alkali-free glass, crystal, and the like. . Then, the first bonding portion 513 of the fixed substrate 51 and the second bonding portion 523 of the movable substrate 52 are bonded together by a bonding film 53 made of, for example, a plasma polymerized film containing siloxane as a main component. It is configured.

  A fixed reflection film 54 constituting one of the pair of reflection films of the present invention is provided on the surface of the fixed substrate 51 facing the movable substrate 52, and the surface of the movable substrate 52 facing the fixed substrate 51 is provided on the surface of the movable substrate 52. A movable reflective film 55 constituting the other of the pair of reflective films is provided. The fixed reflection film 54 and the movable reflection film 55 are disposed to face each other with a gap G1 interposed therebetween.

The wavelength variable interference filter 5 is provided with an electrostatic actuator 56 which is an example of a gap changing unit of the present invention used to adjust (change) the gap size of the gap G1. Such an electrostatic actuator 56 can easily change the size of the gap G1 by electrostatic attraction by applying a predetermined voltage between the opposing electrodes, and the configuration can be simplified. The electrostatic actuator 56 can be driven under the control of the drive control unit 15.
In the following description, the planar view seen from the substrate thickness direction of the fixed substrate 51 or the movable substrate 52, that is, the planar view seen from the stacking direction of the fixed substrate 51 and the movable substrate 52, This is referred to as a plan view. In the present embodiment, the center point of the fixed reflection film 54 and the center point of the movable reflection film 55 coincide with each other in the filter plan view, and the center point of these reflection films 54 and 55 in the plan view is indicated by O.

(Configuration of fixed substrate)
As shown in FIGS. 3 and 4, the fixed substrate 51 includes an electrode arrangement groove 511 and a reflective film installation portion 512 formed by, for example, etching.
The electrode arrangement groove 511 is formed in an annular shape centering on the filter center point O of the fixed substrate 51 in the filter plan view. The reflection film installation part 512 is formed so as to protrude from the center part of the electrode arrangement groove 511 toward the movable substrate 52 in the filter plan view. The bottom surface of the electrode placement groove 511 is an electrode placement surface 511A on which the first drive electrode 561 constituting the electrostatic actuator 56 is placed. Further, the protruding front end surface of the reflection film installation portion 512 is a reflection film installation surface 512A on which the fixed reflection film 54 is disposed.
The fixed substrate 51 is provided with an electrode extraction groove 511 </ b> B extending from the electrode arrangement groove 511 toward the outer peripheral edge of the fixed substrate 51. Specifically, the electrode lead-out groove 511B extends toward each vertex C1, C2, C3, C4 of the fixed substrate 51. Further, notches 514 are formed at the apexes C2 and C3 (see FIG. 2) of the fixed substrate 51, and a second drive electrode pad 562P and a second mirror electrode pad 59P described later are exposed.

The electrode placement groove 511 is formed by wet etching the fixed substrate 51. For this reason, as shown in FIGS. 3 and 4, the groove end portions (near the inner peripheral edge and near the outer peripheral edge) become inclined surfaces that are gently inclined by side etching.
A first drive electrode 561 constituting the electrostatic actuator 56 is provided on the electrode installation surface 511 </ b> A of the electrode arrangement groove 511. The first drive electrode 561 may be provided directly on the electrode installation surface 511A, or another thin film (layer) may be provided on the electrode installation surface 511A and installed thereover.
More specifically, the first drive electrode 561 is formed in a C-shaped arc centered on the filter center point O, and a C-shaped opening is provided in a part near the vertex C4. The first drive extraction electrode 561A is connected to the first drive electrode 561, and the first drive extraction electrode 561A is extracted to the vertex C1 along the electrode extraction groove 511B extending toward the vertex C1. The first drive electrode pad 561P is configured at the vertex C1.
Examples of the material for forming the first drive electrode 561 and the first drive extraction electrode 561A include ITO (Indium Tin Oxide) and a Cr / Au laminate.
In addition, an insulating layer may be formed on the surface of the first drive electrode 561.
In the present embodiment, a configuration in which one first drive electrode 561 is provided on the electrode installation surface 511A is shown. For example, a configuration in which two electrodes that are concentric circles around the filter center point O are provided (double) Electrode configuration).

As described above, the reflective film installation portion 512 is formed in a substantially cylindrical shape having a diameter smaller than that of the electrode arrangement groove 511 on the same axis as the electrode arrangement groove 511. An upper surface (a surface facing the movable substrate 52) of the reflective film installation part 512 is a reflective film installation surface 512A, and a fixed reflective film 54 is provided.
The fixed reflective film 54 may be provided directly on the reflective film installation part 512, or another thin film (layer) may be provided on the reflective film installation part 512 and may be installed thereon. As the fixed reflective film 54, for example, a metal film such as Ag or a conductive alloy film such as an Ag alloy can be used.
Further, for example, a dielectric multilayer film formed by alternately stacking a high refractive index layer and a low refractive index layer using TiO _{2 as} a high refractive index layer and SiO ₂ as a low refractive index layer may be used. A reflective film in which a multilayer film and a metal film are laminated, a reflective film in which a dielectric single layer film and an alloy film are laminated, or the like may be used.

The reflective film installation part 512 is provided with a translucent first insulating film 571 that covers the fixed reflective film 54. As such a first insulating film 571, for example, SiO ₂ , TiO ₂ or the like can be used.
As shown in FIGS. 3 and 4, the first insulating film 571 includes an interference region 571A (first region) overlapping with the fixed reflective film 54, and an extended region 571B (second region) surrounding the interference region 571A. ). Here, the interference region 571 </ b> A has a uniform thickness dimension, and the surface facing the movable reflective film 55 is parallel to the fixed reflective film 54 and the movable reflective film 55.

  On the other hand, the surface of the extension region 571B is an inclined surface that is gently inclined from the edge of the surface of the interference region 571A, and the outer peripheral end thereof is connected to the inclined surface on the inner peripheral side of the electrode placement groove 511 without any step. In the present embodiment, the extension region 571B is exemplified by a configuration inclined from the outer peripheral end of the interference region 571A, but is not limited thereto. For example, a flat surface that is the same plane as the interference region 571A may be formed within a predetermined distance dimension from the interference region 571A, and a gently inclined surface may be formed from an end portion of the flat surface.

Furthermore, a translucent first mirror electrode 58 is provided on the first insulating film 571. Examples of the first mirror electrode 58 include indium gallium oxide (InGaO), indium tin oxide (Sn-doped indium oxide: ITO), Ce-doped indium oxide (ICO), and fluorine-doped indium oxide (indium oxide). IFO), antimony-doped tin oxide (ATO) that is a tin-based oxide, fluorine-doped tin oxide (FTO), tin oxide (SnO ₂ ), Al-doped zinc oxide (AZO) that is a zinc-based oxide, Ga-doped zinc oxide (GZO), fluorine-doped zinc oxide (FZO), zinc oxide (ZnO), or the like is used. Alternatively, indium zinc oxide (IZO: registered trademark) made of indium oxide and zinc oxide may be used.
The first mirror electrode 58 is preferably provided so as to cover at least a region facing the fixed reflective film 54 (interference region 571A of the first insulating film 571).
That is, if the first mirror electrode 58 is provided only in a part on the interference region 571A, a position where light passes through the first mirror electrode 58 and a position where light does not pass between the reflective films 54 and 55 are generated. In this case, the wavelength range of the light emitted by the optical path difference slightly changes, and the wavelength resolution is lowered. On the other hand, as described above, the first mirror electrode 58 is formed so as to cover the entire interference region 571A, so that the difference in optical characteristics as described above does not occur, and the decrease in wavelength resolution can be suppressed.

  For example, when light emitted from a part of the fixed reflective film 54 (for example, a region within a predetermined diameter range from the center point O) is handled as measurement target light by providing an aperture or the like, the first mirror electrode 58 interferes. A structure may be provided in part of the region 571A. In this case, the optical characteristics need only be the same in the measurement region where the measurement target light is incident (emitted). For example, the first mirror electrode 58 may be provided so as to cover the measurement region. A configuration in which the first mirror electrode 58 is provided may be employed.

As shown in FIGS. 2 and 3, the first mirror electrode 58 includes a first mirror extraction electrode 58 </ b> A extending from a part of the outer peripheral edge toward the vertex C <b> 4 of the fixed substrate 51. The first mirror extraction electrode 58A passes from the interference region 571A of the first insulating film 571 to the extension region 571B, and is extracted to the vertex C4 through the inclined surface, bottom surface, and electrode extraction groove 511B of the electrode arrangement groove 511. It is. The surface of the interference region 571A is a flat surface, and the surface of the extension region 571B is gently inclined without a step from the surface of the interference region 571A. Further, the inclined surface of the extension region 571B and the inclined surface of the electrode arrangement groove 511 are also connected with a gentle inclined surface without a step. Furthermore, the bottom surface of the electrode placement groove 511 (electrode installation surface 511A) and the bottom surface of the electrode extraction groove 511B are the same plane and become a flat smooth surface.
Therefore, the first mirror extraction electrode 58A is arranged on a flat surface or a gently inclined surface from the interference region 571A of the first insulating film 571 to the vertex C4 of the fixed substrate 51.
The tip of the first mirror extraction electrode 58A (the part located at the vertex C4) constitutes a first mirror electrode pad 58P connected to the drive control unit 15.

The first bonding portion 513 of the fixed substrate 51 is a region bonded to the movable substrate 52. A first insulating film 571 is provided on the surface of the first bonding portion 513. Then, the first bonding film 531 is formed on the first insulating film 571, and the first bonding film 531 is bonded to the second bonding film 532 of the movable substrate 52, whereby the fixed substrate 51 and the movable substrate 52 are bonded. Be joined.
In the present embodiment, an example in which the first insulating film 571 is formed on the first bonding portion 513 is shown. However, for example, a configuration in which the first insulating film 571 is not formed may be employed. In this case, the first bonding film 531 is provided directly on the first bonding portion 513 or via another spacer member.

  Further, an antireflection film may be formed at a position corresponding to the fixed reflection film 54 on the light incident surface of the fixed substrate 51 (the surface on which the fixed reflection film 54 is not provided). This antireflection film can be formed, for example, by alternately laminating a low refractive index film and a high refractive index film, reducing the reflectance of visible light on the surface of the fixed substrate 51 and increasing the transmittance. Let

(Configuration of movable substrate)
As shown in FIGS. 2 to 4, the movable substrate 52 includes a circular movable portion 521 centered on the filter center point O in the filter plan view, and a holding portion that is coaxial with the movable portion 521 and holds the movable portion 521. 522 and a second joint portion 523 provided outside the holding portion 522. Notches 524 are formed at the apexes C1 and C4 (see FIG. 2) of the movable substrate 52, and the first drive electrode pad 561P and the first mirror electrode pad 58P are exposed.

The movable part 521 has a thickness dimension larger than that of the holding part 522. For example, in this embodiment, the movable part 521 has the same dimension as the thickness dimension of the movable substrate 52 (second bonding part 523). The movable portion 521 is formed to have a diameter larger than at least the diameter of the outer peripheral edge of the reflection film installation surface 512A in the filter plan view. The movable portion 521 is provided with a movable reflective film 55. The movable reflective film 55 may be provided directly on the movable surface 521A, or another thin film (layer) may be provided on the movable surface 521A and may be installed thereon.
The movable reflective film 55 is provided in the central part of the movable surface 521A of the movable part 521 so as to face the fixed reflective film 54 via the gap G1. As the movable reflective film 55, a reflective film having the same configuration as that of the fixed reflective film 54 described above is used.
Similar to the fixed substrate 51, an antireflection film may be formed on the surface of the movable portion 521 opposite to the fixed substrate 51.

A second insulating film 572 is provided on the surface of the movable substrate 52 facing the fixed substrate 51.
As shown in FIGS. 3 and 4, the second insulating film 572 is provided on the entire surface of the movable substrate 52 that faces the fixed substrate 51 so as to cover the movable reflective film 55. Specifically, the second insulating film 572 includes a surface of the interference region 572A (first region) that overlaps the movable reflective film 55 and a surface of the extension region 572B (second region) that extends outward from the interference region 572A. Are in the same plane and parallel to the surface of the movable reflective film 55.

A second drive electrode 562 and a second mirror electrode 59 are provided on the second insulating film 572.
The second drive electrode 562 may be provided directly on the second insulating film 572 or may be provided on another thin film (layer).
The second drive electrode 562 is formed in a C-shaped arc centered on the filter center point O, and a C-shaped opening is provided in a part near the vertex C2 of the fixed substrate 51. Further, the second drive extraction electrode 562A is connected to the second drive electrode 562, and the second drive extraction electrode 562A is movable along a region facing the electrode extraction groove 511B extending toward the vertex C3. It is pulled out to the vertex C3 of the substrate 52. As a material for forming the second drive electrode 562 and the second drive extraction electrode 562A, for example, ITO may be used as in the first drive electrode 561 and the first drive extraction electrode 561A. The second drive lead electrode 562A constitutes a second drive electrode pad 562P connected to the drive control unit 15 by, for example, an FPC or a lead wire at the vertex C3.
In the present embodiment, an example in which the gap G2 between the drive electrodes 561 and 562 is larger than the gap G1 between the reflective films 54 and 55 is shown, but the present invention is not limited to this. For example, when infrared rays or far infrared rays are used as the measurement target light, the gap G1 may be larger than the gap G2 depending on the wavelength range of the measurement target light.

Similar to the first mirror electrode 58, the second mirror electrode 59 is an indium oxide indium gallium oxide (InGaO), indium tin oxide (Sn-doped indium oxide: ITO), Ce-doped indium oxide (ICO), fluorine-doped. Indium oxide (IFO), antimony-doped tin oxide (ATO) that is tin-based oxide, fluorine-doped tin oxide (FTO), tin oxide (SnO ₂ ), Al-doped zinc oxide (AZO) that is zinc-based oxide, Ga Doped zinc oxide (GZO), fluorine-doped zinc oxide (FZO), zinc oxide (ZnO), or the like is used. Alternatively, indium zinc oxide (IZO: registered trademark) made of indium oxide and zinc oxide may be used.
Similarly to the first mirror electrode 58, the second mirror electrode 59 is preferably provided so as to cover at least the region facing the movable reflective film 55 (interference region 572A of the second insulating film 572).
As in the case of the first mirror electrode 58, when light emitted from a part of the reflection films 54 and 55 is handled as measurement target light by providing an aperture, for example, the optical characteristics are the same in the measurement region. As long as it is provided.

  As shown in FIGS. 2 and 3, the second mirror electrode 59 includes a second mirror extraction electrode 59A extending from a part of the outer peripheral edge toward the vertex C2 of the movable substrate 52. The second mirror extraction electrode 59A is extracted from the interference region 572A of the second insulating film 572 to the vertex C3 through the extension region 572B. The tip of the second mirror extraction electrode 59A (the part located at the vertex C2) constitutes a second mirror electrode pad 59P connected to the drive control unit 15.

The holding part 522 is a diaphragm that surrounds the periphery of the movable part 521, and has a thickness dimension smaller than that of the movable part 521. Such a holding part 522 is easier to bend than the movable part 521, and the movable part 521 can be displaced toward the fixed substrate 51 by a slight electrostatic attraction. At this time, since the movable portion 521 has a thickness dimension larger than that of the holding portion 522 and becomes rigid, even if the movable portion 521 is pulled toward the fixed substrate 51 by electrostatic attraction, the shape change of the movable portion 521 is caused to some extent. Can be suppressed.
In the present embodiment, the diaphragm-like holding part 522 is illustrated, but the present invention is not limited to this. For example, the beam-like holding parts arranged at equal angular intervals with the filter center point O of the movable part 521 as the center. It is good also as a structure provided.

[Configuration of optical module detector, IV converter, amplifier, A / D converter]
Next, returning to FIG. 1, the optical module 10 will be described.
The detector 11 receives (detects) the light transmitted through the wavelength variable interference filter 5 and outputs a detection signal based on the amount of received light to the IV converter 12.
The IV converter 12 converts the detection signal input from the detector 11 into a voltage value and outputs the voltage value to the amplifier 13.
The amplifier 13 amplifies a voltage (detection voltage) corresponding to the detection signal input from the IV converter 12.
The A / D converter 14 converts the detection voltage (analog signal) input from the amplifier 13 into a digital signal and outputs it to the control unit 20.

[Configuration of drive control unit]
The drive control unit 15 applies a drive voltage to the electrostatic actuator 56 of the wavelength variable interference filter 5 based on the control of the control unit 20. As a result, an electrostatic attractive force is generated between the first drive electrode 561 and the second drive electrode 562 of the electrostatic actuator 56, and the movable portion 521 is displaced toward the fixed substrate 51 side.
The drive control unit 15 sets the mirror electrode pads 58P and 59P to a reference potential (for example, ground potential). Thereby, electric charges on the surfaces of the first insulating film 571 and the second insulating film 572 are released, and the action of electrostatic force due to charging is suppressed. That is, in this embodiment, each mirror electrode 58 and 59 functions as an antistatic electrode.
The mirror electrodes 58 and 59 can also function as capacitance detection amount electrodes or drive electrodes.
When used as a capacitance detection electrode, for example, a high frequency voltage that does not affect driving is applied between the mirror electrodes 58 and 59, and the capacitance between the mirror electrodes 58 and 59 is detected by the drive control unit 15. . Thereby, the distance between the mirror electrodes 58 and 59 can be calculated, and the gap dimension between the reflective films 54 and 55 is obtained by adding the thickness dimensions of the first insulating film 571 and the second insulating film 572 (described later). Can be calculated.
When used as a drive electrode, for example, a drive voltage is applied between the mirror electrodes 58 and 59. Thereby, it is possible to control the gap dimension between the reflection films 54 and 55 together with the electrostatic actuator 56 with high accuracy, and to set the desired gap dimension with high accuracy.

[Configuration of control unit]
Next, the control unit 20 of the spectrometer 1 will be described.
The control unit 20 is configured by combining a CPU, a memory, and the like, for example, and controls the overall operation of the spectroscopic measurement apparatus 1. As illustrated in FIG. 1, the control unit 20 includes a wavelength setting unit 21, a light amount acquisition unit 22, and a spectroscopic measurement unit 23. The memory of the control unit 20 stores V-λ data indicating the relationship between the wavelength of light transmitted through the wavelength variable interference filter 5 and the drive voltage applied to the electrostatic actuator 56 corresponding to the wavelength. ing.

The wavelength setting unit 21 sets a target wavelength of light extracted by the variable wavelength interference filter 5 and instructs the electrostatic actuator 56 to apply a drive voltage corresponding to the set target wavelength based on the V-λ data. Is output to the drive control unit 15.
The light quantity acquisition unit 22 acquires the light quantity of the target wavelength light transmitted through the wavelength variable interference filter 5 based on the light quantity acquired by the detector 11.
The spectroscopic measurement unit 23 measures the spectral characteristics of the light to be measured based on the light amount acquired by the light amount acquisition unit 22.

[Manufacturing method of tunable interference filter]
Next, a method for manufacturing the wavelength variable interference filter 5 as described above will be described with reference to the drawings.
FIG. 5 is a flowchart showing manufacturing steps of the variable wavelength interference filter 5.
In the manufacture of the variable wavelength interference filter 5, first, a first glass substrate M1 for forming the fixed substrate 51 and a second glass substrate M2 for forming the movable substrate 52 are prepared, and the fixed substrate forming step S1, The movable substrate forming step S2 is performed. Thereafter, the substrate bonding step S3 is performed to bond the first glass substrate M1 processed in the fixed substrate forming step S1 and the second glass substrate M2 processed in the movable substrate forming step S2. Further, the cutting step S4 is performed to separate the first glass substrate M1 and the second glass substrate M2 to form the wavelength variable interference filter 5.
Hereinafter, each process S1-S4 is demonstrated based on drawing.

(Fixed substrate formation process)
FIG. 6 is a diagram showing a state of the first glass substrate M1 in the fixed substrate forming step S1.
In the fixed substrate forming step S1, first, both surfaces of the first glass substrate M1, which is a manufacturing material of the fixed substrate 51, are precisely polished until the surface roughness Ra becomes 1 nm or less, for example, to a thickness of 500 μm.

Then, as shown in FIG. 6A, a fixed reflective film 54 is formed on one surface A1 (the surface to be joined to the movable substrate 52) of the first glass substrate M1. In the case where a metal film such as an Ag alloy or an alloy film such as an Ag alloy is used as the fixed reflective film 54, a photolithography method is performed after a reflective film (metal film or alloy film) is formed on the surface of the first glass substrate M1. Etc. are used for patterning.
In the case of forming a dielectric multilayer film as the reflective film, patterning can be performed by, for example, a lift-off process. In this case, a resist (lift-off pattern) is formed on a portion other than the reflective film formation portion on the first glass substrate M1 by a photolithography method or the like. Thereafter, a material for forming the fixed reflective film 54 (for example, a dielectric multilayer film in which the high refractive layer is TiO ₂ and the low refractive layer is SiO ₂ ) is formed by sputtering or vapor deposition. Then, after forming the fixed reflective film 54, unnecessary portions of the film are removed by lift-off.

Next, as shown in FIG. 6B, a first insulating film 571 is formed on the entire surface A1 of the first glass substrate M1. For this, for example, a plasma CVD method or sputtering can be used. At this time, the first insulating film 571 is formed thicker than the fixed reflective film 54. For example, when a 700 nm dielectric multilayer film is formed as the fixed reflective film 54, the first insulating film 571 is formed to have a thickness of 1 μm or more.
Thereafter, as shown in FIG. 6C, the surface of the first insulating film 571 is mirror-polished and smoothed. At this time, polishing is performed so that the first insulating film 571 remains with a uniform thickness on the surface of the fixed reflective film 54 (interference region 571A). For example, the thickness dimension of the interference region 571A is set to 100 nm.

Next, a resist is applied to the entire first glass substrate M1, and a resist pattern is formed so that regions corresponding to the bottom surfaces (flat portions) of the electrode placement groove 511 and the electrode extraction groove 511B are opened. Thereafter, wet etching is performed on the first insulating film 571 and the first glass substrate M1 using a hydrofluoric acid aqueous solution to form, for example, a 1 μm groove.
At this time, the etching proceeds from the opening of the resist to the bottom of the resist, so that side etching proceeds. For this reason, as shown in FIG. 6D, a gentle inclined curved surface is formed in the outer peripheral portion of the electrode arrangement groove 511 and the electrode extraction groove 511B and the extension region 571B of the first insulating film 571. At this time, in the inclined surface formed in the extension region 571 </ b> B, the end portion of the interference region 571 </ b> A is formed in an arcuate curved surface in which the center of curvature is inside the first insulating film 571.
Thereafter, the resist is removed.
Further, in order to make the end shape of the extended region 571B into a further arcuate curved surface shape, the first glass substrate M1 may be additionally immersed in a hydrofluoric acid aqueous solution, and the surface may be etched by about 0.1 μm.
In order to form a gently sloping curved surface, wet etching with a hydrofluoric acid aqueous solution is most suitable. However, it is possible to form a sloping curved surface by dry etching using CF ₄ , C ₄ F ₈ , and CHF _3. It is.

An electrode layer for forming the first drive electrode 561 and the first drive extraction electrode 561A is formed on the electrode installation surface 511A and the electrode extraction groove 511B of the electrode arrangement groove 511 by, for example, vapor deposition or sputtering. To form a film. As this electrode layer, as the first drive electrode 561, for example, a TiW / Au laminated wiring, a Cr / Au laminated wiring, a laminated wiring combining these and ITO, or the like is formed. When the adhesion with the first glass substrate M1 is good, electrode layers other than those described above may be formed. The first drive electrode 561 is preferably formed to be thicker than the first mirror electrode 58 in order to reduce the electrical resistance of the wiring, for example, 100 to 200 nm.
Then, a resist is applied on the electrode layer, and the resist is patterned in accordance with the shapes of the first drive electrode 561 and the first drive extraction electrode 561A using a photolithography method. Thereafter, etching is performed with an etching solution (for example, a mixed solution of hydrochloric acid, nitric acid, and water) for the electrode layer, and then the resist is removed.

Next, the first mirror electrode 58 is formed on the first insulating film 571. Specifically, a transparent electrode film (for example, ITO or the like) for forming the first mirror electrode 58 is formed on the surface A1 of the first glass substrate M1 by using, for example, a vapor deposition method or a sputtering method. The transparent electrode film preferably has a thickness dimension of, for example, 30 nm or less in order to ensure transparency.
Here, as described above, the first insulating film 571 includes the interference region 571A as a flat surface, and the extension region 571B as an inclined surface that is gently inclined from the surface of the interference region 571A. In addition, the outer peripheral end portion of the extension region 571B is continuous with the gentle inclined surface on the inner peripheral side of the electrode placement groove 511, and is connected to the electrode extraction groove 511B from the flat electrode installation surface 511A. Therefore, the transparent electrode film is formed on a flat surface or a gently inclined surface from the interference region 571A to the electrode lead-out groove 511B, so that there is no step or the like and there is no disconnection.

Thereafter, a resist is applied to the surface of the transparent electrode film to cover the formation positions of the first mirror electrode 58 and the first mirror extraction electrode 58A, and the formation positions of the first drive electrode 561 and the first drive extraction electrode 561A. Form. Then, the first mirror electrode 58 and the first mirror extraction electrode 58A are patterned by etching.
At this time, if the transparent electrode film constituting the first mirror electrode 58 and the first drive electrode 561 are different film materials, and the first drive electrode 561 is not etched by the etchant for the transparent electrode film, the first drive is performed. It is not necessary to cover the formation positions of the electrode 561 and the first drive extraction electrode 561A with a resist.
Accordingly, as shown in FIG. 6E, the first drive electrode 561, the first mirror electrode 58, the first drive extraction electrode 561A (not shown in FIG. 6), and the first mirror extraction electrode 58A (not shown in FIG. 6). Abbreviation) is formed.

Thereafter, an insulating layer may be formed on the first drive electrode 561 and the first mirror electrode 58. In this case, after forming an insulating layer (for example, SiO ₂ ) covering each electrode 561, 561A, 58, 58A by, for example, plasma CVD, the insulating layer on each electrode pad 561P, 58P is removed by, for example, dry etching or the like. .

(Movable substrate formation process)
Next, the movable substrate forming step S2 will be described. FIG. 7 is a diagram illustrating a state of the second glass substrate M2 in the movable substrate forming step S2.
In the movable substrate forming step S2, first, both surfaces are precisely polished until the surface roughness Ra of the second glass substrate M2 (for example, the thickness dimension is 500 μm) becomes 1 nm or less.
Thereafter, as shown in FIG. 7A, the movable reflective film 55 is formed on the surface A2 of the second glass substrate M2 on the side to which the fixed substrate 51 is bonded. The movable reflective film 55 can be formed by the same method as the fixed reflective film 54.

Thereafter, as shown in FIG. 7B, a second insulating film 572 is formed on the entire surface A2 of the second glass substrate M2 by using, for example, plasma CVD or sputtering. At this time, similarly to the formation of the first insulating film 571, the thickness dimension of the second insulating film 572 is formed larger than the thickness dimension of the movable reflective film 55, for example, a dielectric multilayer film having a movable reflective film 55 of 700 nm. In this case, the thickness is preferably 1 μm or more.
Next, as shown in FIG. 7C, the surface of the second insulating film 572 is mirror-polished and smoothed. At this time, polishing is performed so that the second insulating film 572 remains on the surface of the movable reflective film 55 (interference region 572A) with a uniform thickness. For example, the thickness dimension of the interference region 572A is set to 100 nm.

  Thereafter, a Cr / Au layer is formed on the surface (both sides) of the second glass substrate M2, and this Cr / Au layer is used as an etching mask, and for example, a hydrofluoric acid system (BHF or the like) is used and corresponds to the holding unit 522. The region is etched by a depth of, for example, 470 μm. Thereafter, by removing the Cr / Au layer used as an etching mask, the movable substrate 52 is formed as shown in FIG.

Next, as shown in FIG. 7E, a second drive electrode 562, a second drive extraction electrode 562A (not shown), a second mirror electrode 59, and a second mirror extraction electrode 59A (not shown) are formed. .
The formation of the second drive electrode 562 and the second drive extraction electrode 562A can use the same method as the formation method of the first drive electrode 561 and the first drive extraction electrode 561A in the fixed substrate forming step S1.
The second mirror electrode 59 and the second mirror extraction electrode 59A can be formed by using the same method as the formation method of the first mirror electrode 58 and the first mirror extraction electrode 58A in the fixed substrate forming step S1. it can.
Since these electrodes 562, 562A, 59, 59A are formed on the flat second insulating film 572 having no step or the like, there is no risk of disconnection.

(Board bonding process and cutting process)
Next, the substrate bonding step S3 will be described.
In the substrate bonding step S3, first, polyorganosiloxane is used as a main component by using, for example, a metal mask for the first bonding portion 513 of the first glass substrate M1 and the second bonding portion 523 of the second glass substrate M2. Plasma polymerized films (first bonding film 531 and second bonding film 532) are formed by, for example, a plasma CVD method. Each of the bonding films 531 and 532 is formed to have a film thickness dimension set in advance according to the gap dimension between the reflection films 54 and 55, and is formed to be, for example, 100 nm.

Then, in order to providing the activation energy to the plasma-polymerized film of the first glass substrate M1 and the second glass substrate M2, performing the O ₂ plasma treatment or UV treatment. In the case of the O ₂ plasma treatment, for example, it is performed for 30 seconds under the conditions of an O ₂ flow rate of 1.8 × 10 ⁻³ (m ³ / h), a pressure of 27 Pa, and an RF power of 200 W. In the case of UV treatment, the treatment is performed for 3 minutes using excimer UV (wavelength 172 nm) as a UV light source.
After applying activation energy to the plasma polymerization film, alignment adjustment of the first glass substrate M1 and the second glass substrate M2 is performed. Then, the first glass substrate M1 and the second glass substrate M2 are overlapped with each other through the plasma polymerization film, and a load of, for example, 98 (N) is applied to the bonded portion for 10 minutes. Thereby, the 1st glass substrate M1 and the 2nd glass substrate M2 are joined.

(Cutting process)
Next, the cutting step S4 will be described.
In the cutting step S4, the fixed substrate 51 and the movable substrate 52 are cut out in units of chips, and the variable wavelength interference filter 5 as shown in FIGS. 2 and 3 is formed. For the cutting of the first glass substrate M1 and the second glass substrate M2, for example, scribe break or laser cutting can be used.

[Operational effects of the first embodiment]
In the present embodiment, the first insulating film 571 is provided so as to cover the fixed reflective film 54, and includes an interference region 571A that overlaps the fixed reflective film 54 and an extended region 571B that surrounds the interference region 571A. The surface of the extension region 571B is gently inclined from the plane of the interference region 571A and continues to the inclined surface on the inner peripheral side of the electrode placement groove 511 without a step.
For this reason, when forming the 1st mirror electrode 58 and the 1st mirror extraction electrode 58A, the disconnection by a level | step difference etc. does not arise and wiring reliability can be improved.
Further, since the fixed reflective film 54 is covered with the first insulating film 571, even if a film material that easily deteriorates, such as an Ag metal film, is used as the fixed reflective film 54, the first insulating film 571 serves as a protective film. It functions and can suppress deterioration of the fixed reflective film 54.

The second insulating film 572 is provided so as to cover the movable reflective film 55, and includes an interference region 572A that overlaps the movable reflective film 55 and an extended region 572B that surrounds the interference region 572A. The surface of the extension region 572B is flush with the surface of the interference region 572A and is formed into a flat smooth surface by mirror polishing.
For this reason, when forming the second mirror electrode 59 and the second mirror extraction electrode 59A, disconnection due to a step or the like does not occur, and the wiring reliability can be improved also in the second mirror electrode 59.
In addition, since the movable reflective film 55 is covered with the second insulating film 572, the second insulating film 572 serves as a protective film even if a film material that easily deteriorates, such as an Ag metal film, is used as the movable reflective film 55, for example. It functions and can suppress deterioration of the movable reflective film 55.

In the present embodiment, after the first insulating film 571 is formed on the surface of the first glass substrate M1 which is the base material of the fixed substrate 51, a resist pattern opened corresponding to the electrode installation surface 511A is formed, and wet etching is performed. To implement. As a result, the side surface etching proceeds with the etching solution that has flowed under the resist, so that a gentle inclined surface is formed in the extension region 571B of the first insulating film 571.
In addition, a curved surface having a center of curvature is formed inside the first insulating film 571 at the end of the inclined surface in the extended region 571B on the interference region 571A side by wet etching. That is, an inclined surface whose inclination angle changes gently from the flat surface in the interference region 571A is formed.
For this reason, there is no portion where the angle changes suddenly on the surface of the first insulating film 571, and the risk of disconnection can be more reliably reduced.

  As described above, since the wiring reliability in the wavelength tunable interference filter 5 can be improved, the optical module 10 provided with such a wavelength tunable interference filter 5 and the spectroscopic measurement apparatus 1 which is an electronic device are also wired. Reliability can be improved and device reliability can be improved.

[Second Embodiment]
Next, a second embodiment of the present invention will be described based on the drawings.
In the first embodiment described above, after the first insulating film 571 is formed on the first glass substrate M1 in the fixed substrate forming step S1, the recesses are formed in the first insulating film 571 and the first glass substrate M1 by etching. By forming, an inclined surface was formed in the extension region 571B.
On the other hand, this embodiment is different from the first embodiment in that an inclined surface is formed in the extension region 571B of the first insulating film 571 without using etching.

FIG. 8 is a cross-sectional view showing a schematic configuration of the variable wavelength interference filter 5A of the present embodiment.
In the following description of the embodiments and modifications, the same reference numerals are given to the configurations already described, and the description thereof is simplified or omitted.
As shown in FIG. 8, in the present embodiment, the first insulating film 571 is provided only at a position that covers the fixed reflective film 54 of the fixed substrate 51, and the first insulating film 571 is provided on the first bonding portion 513. It is not done.
Similarly, the second insulating film 572 is provided only at a position covering the movable reflective film 55 of the movable substrate 52, and in other regions, the second insulating film 572 is provided at the holding portion 522, the second bonding portion 523, and the like. It is not provided.

FIG. 9 is a schematic view showing a method for forming the first insulating film 571 in the present embodiment.
Such a first insulating film 571 can be formed as follows.
That is, in the fixed substrate forming step, after the fixed reflective film 54 is formed on the first glass substrate M1, an area from the fixed reflective film 54 and a position away from the outer peripheral edge of the fixed reflective film 54 by a predetermined distance is opened. The mask M3 is overlaid. Specifically, for example, the mask M3 having an opening corresponding to the reflection film installation surface 512A is overlapped.
Thereafter, the first insulating film 571 is formed by plasma CVD or sputtering. As a result, as shown in FIG. 9, an interference region 571A of the first insulating film 571 having a uniform thickness is formed in the central region of the opening of the mask M3, and the thickness of the first insulating film 571 is reduced in the vicinity of the outer periphery. The extended region 571B is formed.
The same applies to the formation of the second insulating film 572 in the movable substrate forming step S2.

[Operational effects of the second embodiment]
In the present embodiment, as in the first embodiment, the surfaces of the extended region 571B of the first insulating film 571 and the surface of the extended region 572B of the second insulating film 572 are inclined with respect to the interference regions 571A and 572A. . Therefore, as in the first embodiment, there is no risk of disconnection in the first mirror electrode 58, the first mirror extraction electrode 58A, the second mirror electrode 59, and the second mirror extraction electrode 59A, and the wiring reliability is improved. be able to.

[Third embodiment]
Next, a third embodiment of the present invention will be described based on the drawings.
In the spectroscopic measurement device 1 of the first embodiment, the wavelength variable interference filter 5 is directly provided to the optical module 10. However, some optical modules have a complicated configuration, and it may be difficult to directly provide the variable wavelength interference filter 5 particularly for a miniaturized optical module. In the present embodiment, an optical filter device that enables the wavelength variable interference filter 5 to be easily installed even for such an optical module will be described below.

FIG. 10 is a cross-sectional view showing a schematic configuration of the optical filter device according to the third embodiment of the present invention.
As shown in FIG. 10, the optical filter device 600 includes a wavelength tunable interference filter 5 and a housing 601 that houses the wavelength tunable interference filter 5.
The housing 601 includes a base substrate 610, a lid 620, a base side glass substrate 630, and a lid side glass substrate 640.

  The base substrate 610 is configured by, for example, a single layer ceramic substrate. On the base substrate 610, the movable substrate 52 of the variable wavelength interference filter 5 is installed. For example, the movable substrate 52 may be disposed on the base substrate 610 via an adhesive layer or the like, or may be disposed by being fitted to another fixing member or the like. In addition, a light passage hole 611 is formed in the base substrate 610 in a region facing an effective region (a region overlapping with the reflection films 54 and 55 in the filter plan view). And the base side glass substrate 630 is joined so that this light passage hole 611 may be covered. As a method for joining the base side glass substrate 630, for example, glass frit joining using a glass frit that is a piece of glass that has been melted at a high temperature and rapidly cooled, adhesion by an epoxy resin, or the like can be used.

Inner terminal portions 615 corresponding to the electrode pads 561P, 562P, 58P, and 59P of the wavelength variable interference filter 5 are provided on the base inner surface 612 of the base substrate 610 facing the lid 620, respectively. The electrode pads 561P, 562P, 58P, 59P and the inner terminal portion 615 can be connected using, for example, an FPC 615A. To do. Further, the connection is not limited to the connection by the FPC 615A, and wiring connection by wire bonding or the like may be performed, for example.
Further, the base substrate 610 has through holes 614 corresponding to positions where the respective inner terminal portions 615 are provided. Each inner terminal portion 615 is connected to an outer terminal portion 616 provided on the base outer surface 613 opposite to the base inner surface 612 of the base substrate 610 via a conductive member filled in the through hole 614. Yes.
A base joint 617 that is joined to the lid 620 is provided on the outer periphery of the base substrate 610.

As shown in FIG. 10, the lid 620 includes a lid joint 624 joined to the base joint 617 of the base substrate 610, a side wall 625 that continues from the lid joint 624 and rises in a direction away from the base substrate 610, A top surface portion 626 that is continuous from the side wall portion 625 and covers the fixed substrate 51 side of the variable wavelength interference filter 5 is provided. The lid 620 can be formed of an alloy such as Kovar or a metal, for example.
The lid 620 is tightly bonded to the base substrate 610 by bonding the lid bonding portion 624 and the base bonding portion 617 of the base substrate 610.
As this joining method, for example, in addition to laser welding, soldering using silver brazing, sealing using a eutectic alloy layer, welding using low melting glass, glass adhesion, glass frit bonding, epoxy resin Adhesion etc. are mentioned. These bonding methods can be appropriately selected depending on the materials of the base substrate 610 and the lid 620, the bonding environment, and the like.

  The top surface portion 626 of the lid 620 is parallel to the base substrate 610. In the top surface portion 626, a light passage hole 621 is formed in a region facing the effective region of the wavelength variable interference filter 5. And the lid side glass substrate 640 is joined so that this light passage hole 621 may be covered. As a method for bonding the lid-side glass substrate 640, for example, glass frit bonding, adhesion using an epoxy resin, or the like can be used as in the case of bonding the base-side glass substrate 630.

[Operational effects of the third embodiment]
In the optical filter device 600 according to the present embodiment as described above, the wavelength tunable interference filter 5 is protected by the casing 601, so that the wavelength tunable interference filter 5 can be prevented from being damaged by an external factor.

[Other Embodiments]
It should be noted that the present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within the scope that can achieve the object of the present invention are included in the present invention.
For example, in the fixed substrate forming step S1 of the first embodiment, after forming the fixed reflective film 54 on the first glass substrate M1, the first insulating film 571 is formed on the entire surface of the first glass substrate M1. Thereafter, an electrode arrangement groove 511 and an electrode extraction groove 511B were formed.
On the other hand, for example, the electrode placement groove 511 and the electrode extraction groove 511B may be first formed by etching on the first glass substrate M1. In this case, after forming the electrode arrangement groove 511 and the electrode extraction groove 511B, the fixed reflective film 54 is formed, the first insulating film 571 is formed so as to cover the fixed reflective film 54, and then the first insulating film is etched. A recess is formed in 571, and an inclined surface is formed in the extension region 571B. At this time, the first insulating film 571 may be formed only on the reflective film installation surface 512A as in the second embodiment.
In the case of using such a manufacturing method, for example, as shown in FIG. 11, a mirror groove 512B for installing the fixed reflection film 54 can be formed. In such a variable wavelength interference filter 5B, the gap G1 between the reflective films can be made larger than the gap G2 between the drive electrodes 561 and 562.

In the above embodiment, the gap size between the reflective films 54 and 55 can be changed by the electrostatic actuator 56, but the present invention is not limited to this. For example, the present invention can be applied to a Fabry-Perot etalon on the wavelength fixed side.
In the fixed wavelength interference filter, the movable part 521 and the holding part 522 as in the above embodiment are not provided, and the distance between the fixed substrate 51 and the movable substrate 52 is kept constant.
Even in such a case, by providing the first mirror electrode 58 and the second mirror electrode 59, the distance between the reflective films can be kept constant by removing the charge. At this time, the risk of disconnection of the mirror electrodes 58 and 59 and the mirror extraction electrodes 58A and 59A can be reduced by adopting the configuration as in the above embodiment.

  In the above embodiment, the extension regions 571B and 572B have exemplified the insulating films 571 and 572 surrounding the interference regions 571A and 572A. However, the present invention is not limited to this. In the present invention, if an extension region is formed at the positions where the mirror electrodes 58 and 59 and the mirror extraction electrodes 58A and 59A are formed, the risk of disconnection of these electrodes can be reduced. Therefore, the insulating film may be configured to have an interference region where the reflection films overlap and an extension region extending in one direction from the interference region. In this case, if a mirror electrode or a mirror extraction electrode is formed from the interference region to the extension region, the risk of disconnection of these electrodes can be reduced, and the same effect as the above embodiment can be achieved.

  In the above-described embodiment, the configuration in which the inclined surface has a gently curved inclination is illustrated, but the present invention is not limited to this. For example, the inclined plane of the extension region may be continuous with the flat surface of the interference region. However, in this case, since the risk of disconnection increases at the corner between the flat surface and the inclined plane of the interference region, it is preferable to form a gently curved inclined surface as shown in the above embodiment. .

  As the electronic apparatus of the present invention, the spectroscopic measurement apparatus 1 has been exemplified in the above embodiments, but the optical module and the electronic apparatus of the present invention can be applied in various other fields.

For example, as shown in FIG. 12, the electronic apparatus of the present invention can also be applied to a color measuring device for measuring color.
FIG. 12 is a block diagram illustrating an example of a color measurement device 400 including a wavelength variable interference filter.
As shown in FIG. 12, the color measurement device 400 includes a light source device 410 that emits light to the measurement target X, a color measurement sensor 420 (optical module), and a control device 430 that controls the overall operation of the color measurement device 400. With. The colorimetric device 400 reflects light emitted from the light source device 410 by the measurement target X, receives the reflected inspection target light by the colorimetric sensor 420, and outputs the light from the colorimetric sensor 420. It is an apparatus that analyzes and measures the chromaticity of the inspection target light, that is, the color of the measurement target X, based on the detection signal.

  A light source device 410, a light source 411, and a plurality of lenses 412 (only one is shown in FIG. 12) are provided, and for example, reference light (for example, white light) is emitted to the measurement target X. Further, the plurality of lenses 412 may include a collimator lens. In this case, the light source device 410 converts the reference light emitted from the light source 411 into parallel light by the collimator lens and measures it from a projection lens (not shown). Inject toward the target X. In the present embodiment, the color measurement device 400 including the light source device 410 is illustrated. However, for example, when the measurement target X is a light emitting member such as a liquid crystal panel, the light source device 410 may not be provided.

  The colorimetric sensor 420 is an optical module according to the present invention. As shown in FIG. 12, the colorimetric sensor 420 includes a wavelength variable interference filter 5, a detector 11 that receives light transmitted through the wavelength variable interference filter 5, and the wavelength variable interference filter 5. And a drive control unit 15 that varies the wavelength of light to be transmitted. In addition, the colorimetric sensor 420 includes an incident optical lens (not shown) that guides the reflected light (inspection target light) reflected by the measurement target X at a position facing the wavelength variable interference filter 5. In the colorimetric sensor 420, the wavelength variable interference filter 5 separates the light having a predetermined wavelength from the inspection target light incident from the incident optical lens, and the detected light is received by the detector 11. Instead of the wavelength variable interference filter 5, wavelength variable interference filters 5A and 5B and an optical filter device 600 may be provided.

The control device 430 controls the overall operation of the color measurement device 400.
As the control device 430, for example, a general-purpose personal computer, a portable information terminal, a color measurement dedicated computer, or the like can be used. The control device 430 includes a light source control unit 431, a colorimetric sensor control unit 432, a colorimetric processing unit 433, and the like as illustrated in FIG.
The light source control unit 431 is connected to the light source device 410 and outputs a predetermined control signal to the light source device 410 based on, for example, a user's setting input to emit white light with a predetermined brightness.
The colorimetric sensor control unit 432 is connected to the colorimetric sensor 420, sets the wavelength of light received by the colorimetric sensor 420 based on, for example, a user's setting input, and detects the amount of light received at this wavelength. A control signal to this effect is output to the colorimetric sensor 420. Accordingly, the drive control unit 15 of the colorimetric sensor 420 applies a voltage to the electrostatic actuator 56 based on the control signal, and drives the wavelength variable interference filter 5.
The colorimetric processing unit 433 analyzes the chromaticity of the measurement target X from the amount of received light detected by the detector 11.

Another example of the electronic device of the present invention is a light-based system for detecting the presence of a specific substance. As such a system, for example, an in-vehicle gas leak detector that detects a specific gas with high sensitivity by adopting a spectroscopic measurement method using the optical module of the present invention, a photoacoustic rare gas detector for a breath test, etc. Examples of the gas detection device can be exemplified.
An example of such a gas detection device will be described below with reference to the drawings.

FIG. 13 is a schematic view showing an example of a gas detection apparatus provided with the optical module of the present invention.
FIG. 14 is a block diagram showing a configuration of a control system of the gas detection device of FIG.
As shown in FIG. 13, the gas detection device 100 includes a sensor chip 110, a flow path 120 including a suction port 120A, a suction flow path 120B, a discharge flow path 120C, and a discharge port 120D, a main body 130, It is configured with.
The main body unit 130 includes a sensor unit cover 131 having an opening through which the flow channel 120 can be attached, a discharge unit 133, a housing 134, an optical unit 135, a filter 136, a wavelength variable interference filter 5, a light receiving element 137 (detection unit), and the like. , A control unit 138 (processing unit) that processes a detected signal and controls the detection unit, a power supply unit 139 that supplies power, and the like. Instead of the wavelength variable interference filter 5, wavelength variable interference filters 5A and 5B and an optical filter device 600 may be provided. The optical unit 135 emits light, and a beam splitter 135B that reflects light incident from the light source 135A toward the sensor chip 110 and transmits light incident from the sensor chip toward the light receiving element 137. And lenses 135C, 135D, and 135E.
As shown in FIG. 14, an operation panel 140, a display unit 141, a connection unit 142 for interface with the outside, and a power supply unit 139 are provided on the surface of the gas detection device 100. When the power supply unit 139 is a secondary battery, a connection unit 143 for charging may be provided.
Furthermore, as shown in FIG. 14, the control unit 138 of the gas detection device 100 controls a signal processing unit 144 configured by a CPU or the like, a light source driver circuit 145 for controlling the light source 135A, and the variable wavelength interference filter 5. Drive control unit 15, a light receiving circuit 147 that receives a signal from the light receiving element 137, a sensor chip detection that reads a code from the sensor chip 110 and receives a signal from a sensor chip detector 148 that detects the presence or absence of the sensor chip 110. A circuit 149, a discharge driver circuit 150 for controlling the discharge means 133, and the like are provided.

Next, operation | movement of the above gas detection apparatuses 100 is demonstrated below.
A sensor chip detector 148 is provided inside the sensor unit cover 131 at the upper part of the main body unit 130, and the sensor chip detector 148 detects the presence or absence of the sensor chip 110. When the signal processing unit 144 detects the detection signal from the sensor chip detector 148, the signal processing unit 144 determines that the sensor chip 110 is attached, and displays a display signal for displaying on the display unit 141 that the detection operation can be performed. put out.

  For example, when the operation panel 140 is operated by the user and an instruction signal to start the detection process is output from the operation panel 140 to the signal processing unit 144, the signal processing unit 144 first sends the signal processing unit 144 to the light source driver circuit 145. A light source activation signal is output to activate the light source 135A. When the light source 135A is driven, laser light having a single wavelength and stable linear polarization is emitted from the light source 135A. The light source 135A includes a temperature sensor and a light amount sensor, and the information is output to the signal processing unit 144. When the signal processing unit 144 determines that the light source 135A is stably operating based on the temperature and light quantity input from the light source 135A, the signal processing unit 144 controls the discharge driver circuit 150 to operate the discharge unit 133. Thereby, the gas sample containing the target substance (gas molecule) to be detected is guided from the suction port 120A to the suction channel 120B, the sensor chip 110, the discharge channel 120C, and the discharge port 120D. The suction port 120A is provided with a dust removal filter 120A1 to remove relatively large dust, some water vapor, and the like.

The sensor chip 110 is a sensor that incorporates a plurality of metal nanostructures and uses localized surface plasmon resonance. In such a sensor chip 110, an enhanced electric field is formed between the metal nanostructures by the laser light, and when gas molecules enter the enhanced electric field, Raman scattered light and Rayleigh scattered light including information on molecular vibrations are generated. Occur.
These Rayleigh scattered light and Raman scattered light enter the filter 136 through the optical unit 135, and the Rayleigh scattered light is separated by the filter 136, and the Raman scattered light enters the wavelength variable interference filter 5. Then, the signal processing unit 144 outputs a control signal to the drive control unit 15. Accordingly, the drive control unit 15 drives the electrostatic actuator 56 of the wavelength tunable interference filter 5 in the same manner as in the first embodiment, so that the Raman scattered light corresponding to the gas molecule to be detected becomes the wavelength tunable interference filter 5. Spectate with. Thereafter, when the dispersed light is received by the light receiving element 137, a light reception signal corresponding to the amount of received light is output to the signal processing unit 144 via the light receiving circuit 147. In this case, target Raman scattered light can be extracted from the wavelength variable interference filter 5 with high accuracy.
The signal processing unit 144 compares the spectrum data of the Raman scattered light corresponding to the gas molecule to be detected obtained as described above and the data stored in the ROM, and determines whether or not the target gas molecule is the target gas molecule. To determine the substance. Further, the signal processing unit 144 displays the result information on the display unit 141 or outputs the result information from the connection unit 142 to the outside.

  13 and 14 exemplify the gas detection device 100 that performs gas detection from the Raman scattered light obtained by spectrally dividing the Raman scattered light with the variable wavelength interference filter 5. You may use as a gas detection apparatus which specifies gas classification by detecting the light absorbency of. In this case, a gas sensor that allows gas to flow into the sensor and detects light absorbed by the gas in the incident light is used as the optical module of the present invention. A gas detection device that analyzes and discriminates the gas flowing into the sensor by such a gas sensor is an electronic apparatus of the present invention. Even in such a configuration, it is possible to detect a gas component using the wavelength variable interference filter.

In addition, the system for detecting the presence of a specific substance is not limited to the detection of the gas as described above, but a non-invasive measuring device for saccharides by near-infrared spectroscopy, and non-invasive information on food, living body, minerals, etc. A substance component analyzer such as a measuring device can be exemplified.
Hereinafter, a food analyzer will be described as an example of the substance component analyzer.

FIG. 15 is a diagram showing a schematic configuration of a food analysis apparatus which is an example of an electronic apparatus using the optical module of the present invention.
As shown in FIG. 15, the food analyzer 200 includes a detector 210 (optical module), a control unit 220, and a display unit 230. The detector 210 includes a light source 211 that emits light, an imaging lens 212 into which light from the measurement target is introduced, a wavelength variable interference filter 5 that splits the light introduced from the imaging lens 212, and the dispersed light. And an imaging unit 213 (detection unit) for detecting. Instead of the wavelength variable interference filter 5, wavelength variable interference filters 5A and 5B and an optical filter device 600 may be provided.
In addition, the control unit 220 controls the light source control unit 221 that controls the turning on / off of the light source 211 and the brightness control at the time of lighting, the drive control unit 15 that controls the wavelength variable interference filter 5, and the imaging unit 213. , A detection control unit 223 that acquires a spectral image captured by the imaging unit 213, a signal processing unit 224, and a storage unit 225.

  In the food analyzer 200, when the system is driven, the light source 211 is controlled by the light source control unit 221, and light is irradiated from the light source 211 to the measurement object. Then, the light reflected by the measurement object enters the wavelength variable interference filter 5 through the imaging lens 212. The variable wavelength interference filter 5 is driven by the driving method as described in the first embodiment under the control of the drive control unit 15. Thereby, the light of the target wavelength can be extracted from the variable wavelength interference filter 5 with high accuracy. Then, the extracted light is imaged by an imaging unit 213 configured by, for example, a CCD camera or the like. The captured light is accumulated in the storage unit 225 as a spectral image. In addition, the signal processing unit 224 controls the drive control unit 15 to change the voltage value applied to the wavelength variable interference filter 5 and acquires a spectral image for each wavelength.

Then, the signal processing unit 224 performs arithmetic processing on the data of each pixel in each image accumulated in the storage unit 225, and obtains a spectrum at each pixel. In addition, the storage unit 225 stores, for example, information related to food components with respect to the spectrum, and the signal processing unit 224 analyzes the obtained spectrum data based on the information related to food stored in the storage unit 225. The food component contained in the detection target and its content are obtained. Moreover, a food calorie, a freshness, etc. are computable from the obtained food component and content. Furthermore, by analyzing the spectral distribution in the image, it is possible to extract a portion of the food to be inspected that has reduced freshness, and to detect foreign substances contained in the food. Can also be implemented.
Then, the signal processing unit 224 performs processing for causing the display unit 230 to display information such as the components and contents of the food to be examined, the calories, and the freshness obtained as described above.

FIG. 15 shows an example of the food analysis apparatus 200, but it can also be used as a non-invasive measurement apparatus for other information as described above with a substantially similar configuration. For example, it can be used as a biological analyzer for analyzing biological components such as measurement and analysis of body fluid components such as blood. As such a bioanalytical device, for example, a device that detects ethyl alcohol as a device that measures a body fluid component such as blood, it can be used as a drunk driving prevention device that detects the drunk state of the driver. Further, it can also be used as an electronic endoscope system provided with such a biological analyzer.
Furthermore, it can also be used as a mineral analyzer for performing component analysis of minerals.

Furthermore, the optical module and electronic apparatus of the present invention can be applied to the following apparatuses.
For example, it is possible to transmit data using light of each wavelength by changing the intensity of light of each wavelength over time. In this case, light of a specific wavelength is transmitted by a wavelength variable interference filter provided in the optical module. The data transmitted by the light of the specific wavelength can be extracted by separating the light and receiving the light at the light receiving unit, and the electronic data having such a data extraction optical module can be used to extract the light data of each wavelength. By processing, optical communication can be performed.

Further, the electronic device can be applied to a spectroscopic camera, a spectroscopic analyzer, or the like that captures a spectroscopic image by dispersing light with the optical module of the present invention. An example of such a spectroscopic camera is an infrared camera incorporating a wavelength variable interference filter.
FIG. 16 is a schematic diagram showing a schematic configuration of the spectroscopic camera. As shown in FIG. 16, the spectroscopic camera 300 includes a camera body 310, an imaging lens unit 320, and an imaging unit 330.
The camera body 310 is a part that is gripped and operated by a user.
The imaging lens unit 320 is provided in the camera body 310 and guides incident image light to the imaging unit 330. Further, as shown in FIG. 16, the imaging lens unit 320 includes an objective lens 321, an imaging lens 322, and a variable wavelength interference filter 5 provided between these lenses. Instead of the wavelength variable interference filter 5, wavelength variable interference filters 5A and 5B and an optical filter device 600 may be provided.
The imaging unit 330 includes a light receiving element, and images the image light guided by the imaging lens unit 320.
In such a spectroscopic camera 300, a spectral image of light having a desired wavelength can be captured by transmitting light having a wavelength to be imaged by the variable wavelength interference filter 5.

Furthermore, the optical module of the present invention may be used as a bandpass filter. For example, among the light in a predetermined wavelength range emitted from the light emitting element, only the light in a narrow band centered on the predetermined wavelength is used as the variable wavelength interference filter. It can also be used as an optical laser device for spectrally transmitting through.
Further, the optical module of the present invention may be used as a biometric authentication device. For example, the optical module can be applied to authentication devices such as blood vessels, fingerprints, retinas, and irises using light in the near infrared region and visible region.

  Furthermore, an optical module and an electronic device can be used as a concentration detection device. In this case, the infrared energy (infrared light) emitted from the substance is spectrally analyzed by the variable wavelength interference filter, and the analyte concentration in the sample is measured.

  As described above, the optical module and the electronic apparatus of the present invention can be applied to any device that separates predetermined light from incident light. And since the optical module of this invention can disperse | distribute a some wavelength with one device as mentioned above, the measurement of the spectrum of a some wavelength and the detection with respect to a some component can be implemented accurately. Therefore, compared with the conventional apparatus which takes out a desired wavelength with a plurality of devices, it is possible to promote downsizing of the optical module and the electronic apparatus, and for example, it can be suitably used as a portable or in-vehicle optical device.

  In addition, the specific structure for carrying out the present invention can be appropriately changed to other structures and the like within a range in which the object of the present invention can be achieved.

  DESCRIPTION OF SYMBOLS 1 ... Spectrometer, 5, 5A, 5B ... Variable wavelength interference filter, 10 ... Optical module, 11 ... Detector, 15 ... Drive control part, 20 ... Control part, 51 ... Fixed substrate, 511 ... Electrode arrangement groove, 511A ... Electrode installation surface, 512 ... Reflection film installation part, 52 ... Movable substrate, 54 ... Fixed reflection film, 55 ... Movable reflection film, 571 ... First insulating film, 571A ... Interference area, 571B ... Extension area, 572 ... Second Insulating film, 572A ... interference region, 572B ... extension region, 58 ... first mirror electrode, 58A ... first mirror extraction electrode, 59 ... second mirror electrode, 59A ... second mirror extraction electrode, 600 ... optical filter device, 601 ... Housing, 100 ... Gas detection device, 137 ... Light receiving element, 200 ... Food analysis device, 210 ... Detector, 220 ... Control unit, 300 ... Spectral camera, 330 ... Imaging unit, 400 Colorimetric apparatus, 420 ... colorimetric sensor, 430 ... control device.

Claims (14)

A pair of reflective films facing each other;
An insulating film covering at least one of the pair of reflective films,
The insulating film includes a first region that overlaps the reflective film in a plan view as viewed from the thickness direction of the reflective film, and a second region that is continuous with the first region and does not overlap the reflective film.
The surface of the first region is a flat surface parallel to the reflective film,
The surface of said 2nd area | region is the same plane as the surface of said 1st area | region. The interference filter characterized by the above-mentioned. A pair of reflective films facing each other;
An insulating film covering at least one of the pair of reflective films,
The insulating film includes a first region that overlaps the reflective film in a plan view as viewed from the thickness direction of the reflective film, and a second region that is continuous with the first region and does not overlap the reflective film.
The surface of the first region is a flat surface parallel to the reflective film,
The surface of the second region includes an inclined surface that is continuous with the outer peripheral edge of the surface of the first region and is inclined with respect to the surface of the first region. The interference filter according to claim 2,
The interference filter, wherein an end of the inclined surface on the first region side is a curved surface having a center of curvature inside the insulating film. The interference filter according to claim 2 or 3,
The inclined filter is a curved surface formed by wet etching. The interference filter according to any one of claims 1 to 4,
The reflection filter is formed of a dielectric multilayer film. The interference filter according to any one of claims 1 to 5,
The interference filter is provided for each of the pair of reflective films. An interference filter having a pair of reflective films facing each other, and an insulating film covering at least one of the pair of reflective films;
A housing for housing the interference filter,
The insulating film includes a first region that overlaps the reflective film in a plan view as viewed from the thickness direction of the reflective film, and a second region that is continuous with the first region and does not overlap the reflective film.
The surface of the first region is a flat surface parallel to the reflective film,
The optical filter device, wherein the surface of the second region is flush with the surface of the first region. An interference filter having a pair of reflective films facing each other, and an insulating film covering at least one of the pair of reflective films;
A housing for housing the interference filter,
The insulating film includes a first region that overlaps the reflective film in a plan view as viewed from the thickness direction of the reflective film, and a second region that is continuous with the first region and does not overlap the reflective film.
The surface of the first region is a flat surface parallel to the reflective film,
The surface of the second region includes an inclined surface that is continuous with the outer peripheral edge of the surface of the first region and is inclined with respect to the surface of the first region. An interference filter having a pair of reflective films facing each other, and an insulating film covering at least one of the pair of reflective films;
A light receiving unit that receives light emitted from the interference filter,
The insulating film includes a first region that overlaps the reflective film in a plan view as viewed from the thickness direction of the reflective film, and a second region that is continuous with the first region and does not overlap the reflective film.
The surface of the first region is a flat surface parallel to the reflective film,
The surface of said 2nd field is the same plane as the surface of said 1st field. The optical module characterized by things. An interference filter having a pair of reflective films facing each other, and an insulating film covering at least one of the pair of reflective films;
A light receiving unit that receives light emitted from the interference filter,
The insulating film includes a first region that overlaps the reflective film in a plan view as viewed from the thickness direction of the reflective film, and a second region that is continuous with the first region and does not overlap the reflective film.
The surface of the first region is a flat surface parallel to the reflective film,
The surface of the second region includes an inclined surface that is continuous with the outer peripheral edge of the surface of the first region and is inclined with respect to the surface of the first region. An interference filter having a pair of reflective films facing each other, and an insulating film covering at least one of the pair of reflective films;
A control unit for controlling the interference filter,
The insulating film includes a first region that overlaps the reflective film in a plan view as viewed from the thickness direction of the reflective film, and a second region that is continuous with the first region and does not overlap the reflective film.
The surface of the first region is a flat surface parallel to the reflective film,
The surface of said 2nd field is the same plane as the surface of said 1st field. Electronic equipment characterized by things. An interference filter having a pair of reflective films facing each other, and an insulating film covering at least one of the pair of reflective films;
A control unit for controlling the interference filter,
The insulating film includes a first region that overlaps the reflective film in a plan view as viewed from the thickness direction of the reflective film, and a second region that is continuous with the first region and does not overlap the reflective film.
The surface of the first region is a flat surface parallel to the reflective film,
The surface of the second region includes an inclined surface that is continuous with the outer peripheral edge of the surface of the first region and is inclined with respect to the surface of the first region. A reflective film forming step of forming a reflective film on the substrate;
An insulating film forming step of forming an insulating film covering the reflective film on the substrate,
In the insulating film forming step, the first region that overlaps the reflective film in a plan view as viewed from the thickness direction of the reflective film, and the second region that does not overlap the reflective film continuously to the first region A method of manufacturing an interference filter, comprising forming an insulating film and polishing and flattening a surface of the insulating film. A reflective film forming step of forming a reflective film on the substrate;
An insulating film forming step of forming an insulating film covering the reflective film on the substrate,
In the insulating film forming step, the first region that overlaps the reflective film in a plan view as viewed from the thickness direction of the reflective film, and the second region that does not overlap the reflective film continuously to the first region Forming an insulating film, masking the first region on the surface of the insulating film and a position outside a predetermined dimension from the edge of the first region, and performing wet etching to perform edge etching of the first region; A method of manufacturing an interference filter comprising: forming a second region having an inclined surface that is inclined with respect to a surface of the first region by side-etching a region from a predetermined dimension to a position outside a predetermined dimension.

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