JP2013222169A - Interference filter, optical module and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an interference filter preventing a joining part to a substrate from peeling and maintaining spectral accuracy.SOLUTION: The interference filter includes a first substrate 10, a second substrate 20 opposing to the first substrate, a first reflection film 16 disposed on the first substrate 10, and a second reflection film 26 disposed on the second substrate and opposing to the first reflection film 16 via a gap, in which the first substrate and the second substrate 20 are joined by a joining part 45. In a plan view in a plate thickness direction of the first substrate 10 or the second substrate 20, a contour line L1 of the joining part 45 has no angle in a portion where straight lines of the contour line cross, but has a shape of a curved line connecting the straight lines.

Description

  The present invention relates to an interference filter, an optical module, and an electronic apparatus.

There is known an interference filter in which two reflecting films are opposed to each other through a gap, and light having a specific wavelength is selected from incident light and emitted.
In Patent Document 1, in a wavelength tunable interference filter (hereinafter sometimes referred to as an etalon) that can change a gap between reflection films as an interference filter, a reflection film is formed on a transparent substrate facing each other, and a spacer is interposed. It has a structure for joining both substrates.

JP-A-62-257032 (see FIG. 3)

  However, in the wavelength tunable interference filter having a structure in which the substrates are bonded as in Patent Document 1, if an external force is applied to each substrate in the manufacturing process or handling, peeling occurs at a part of the bonded portion between the substrate and the spacer. There is. And since this peeling advances, the gap amount between reflective films changes, and there exists a subject which reduces the spectral accuracy of an interference filter.

  The present invention has been made to solve the above-described problems, and can be realized as the following forms or application examples.

  Application Example 1 An interference filter according to this application example includes a first substrate, a second substrate that faces the first substrate, and a first reflection film and a second reflection film that face each other with a gap therebetween. The first substrate and the second substrate are bonded by a bonding portion, and a contour line in the bonding portion is extended from a straight line in a plan view in the plate thickness direction of the first substrate or the second substrate. It does not include an intersection where the extension lines intersect, and has a shape in which the straight lines are connected by a curve.

According to this configuration, the outline of the joint that joins the first substrate and the second substrate does not include the intersection where the extended line extended from the straight line intersects, and has a shape in which the straight lines are connected by a curve. That is, it is a shape in which the two straight lines are connected by a curve without having a corner portion.
When an external force is applied to the substrate, the peeling at the joint portion tends to peel from the corner portion of the contour line at the joint portion, for example. It is considered that this is because the stress concentrates on the corner of the joint, so that peeling occurs from the corner, and further peeling proceeds from there.
In this application example, the portion where the straight line and the straight line intersect has a shape where the straight line and the straight line intersect with each other without a corner, and there is no portion where stress is concentrated extremely. Further, peeling at the joint can be suppressed.
From this, the interference filter according to this application example maintains the bonding strength between the first substrate and the second substrate at the bonding portion, and prevents a decrease in spectral accuracy of the interference filter due to peeling of the bonding portion. it can.

  Application Example 2 In the interference filter according to the application example, it is preferable that the outline of the joint portion has a shape in which the straight lines are connected by an arc.

According to this configuration, the contour line of the joint portion has a shape in which a portion where the straight line and the straight line intersect with each other does not have a corner portion and the straight lines are connected by an arc.
Since the portion where the straight line and the straight line of the joint portion intersect is an arc shape, the stress acts equally on the arc portion, the applied stress becomes uniform, and peeling at the joint portion can be suppressed.

  Application Example 3 In the interference filter according to the application example described above, it is preferable that a plasma polymerization film is formed at the bonding portion where the first substrate and the second substrate are bonded.

According to this configuration, the plasma polymerization film is formed at the joint portion that joins the first substrate and the second substrate.
By using a plasma polymerized film for the joint, the flatness of the joint can be ensured and good joint strength can be obtained.

  Application Example 4 In the interference filter according to the application example described above, the second filter includes a first electrode formed on the first substrate, and a second electrode facing the first electrode on the second substrate, and the second electrode. It is desirable that the substrate has a movable portion provided with the second reflective film and a thin portion formed around the movable portion so as to be thinner than the movable portion.

According to this configuration, the first substrate and the second substrate are each provided with the first electrode and the second electrode, and the second substrate is provided with the movable portion having the second reflective film and the thin portion around the movable portion. Yes.
In this structure, by applying a voltage between the first electrode and the second electrode, an electrostatic force acts between them, and the movable part can be displaced. The gap between the first reflective film and the second reflective film can be changed by this displacement, and an interference filter (wavelength variable interference filter) that makes the gap between the reflective films variable can be configured.
Also in such an interference filter, the bonding strength between the first substrate and the second substrate is maintained at the bonding portion, and the spectral accuracy of the interference filter due to peeling of the bonding portion can be prevented.

  Application Example 5 An interference filter according to this application example includes a first substrate, a second substrate facing the first substrate, and a first reflection film and a second reflection film facing each other with a gap therebetween. The first substrate and the second substrate are joined by a joint portion, and the joint portion includes the first reflective film and the first substrate in a plan view in the plate thickness direction of the first substrate or the second substrate. 2. A first joint formed on the outer side of the reflective film, and a second joint formed on the outer side of the outline of the first joint with a space from the first joint. And

According to this structure, the 2nd junction part is provided in the outer side of the 1st junction part which joins a 1st board | substrate and a 2nd board | substrate at intervals.
In this structure, even if a large external force is applied to the end portion of the first substrate or the second substrate, the force first acts on the second bonding portion, and the external force is not directly applied to the first bonding portion. In addition, since there is a gap between the second joint and the first joint, there is an effect of relieving the stress applied to the second joint by this gap, and peeling at the first joint and the second joint is prevented. Can be suppressed.
Thus, in the interference filter of this application example, the bonding strength between the first substrate and the second substrate is maintained at the first bonding portion, and the spectral accuracy of the interference filter due to peeling of the bonding portion is prevented from being lowered. be able to.
Further, even if a part of the second joint part is peeled off by an external force, the peeling does not proceed to the first joint part formed at a distance from the second joint part.

  Application Example 6 In the interference filter according to the application example described above, a groove portion that separates the first bonding portion and the second bonding portion is provided on either the first substrate or the second substrate. It is desirable.

According to this configuration, the groove is provided between the first joint and the second joint.
Thus, since there is a groove portion between the second joint portion and the first joint portion, the stress applied to the second joint portion can be relaxed by this groove portion, and the first joint portion and the second joint portion can be relieved. Peeling can be further suppressed.

  Application Example 7 In the interference filter according to the application example described above, it is preferable that an area to be joined of the second joint portion is smaller than an area to be joined of the first joint portion.

According to this configuration, the area (bonding area) where the second bonding portion is bonded is smaller than the area where the first bonding portion is bonded.
A 2nd junction part is formed in the outer periphery of a 1st junction part, and can suppress that the size of an interference filter becomes large because a junction area is smaller than a 1st junction part.

  Application Example 8 In the interference filter according to the application example, it is preferable that the second joint portion is continuously provided along an outer periphery of the contour line of the first joint portion.

According to this structure, the 2nd junction part is continuously provided along the outer periphery of the outline of a 1st junction part.
In this way, the second joint portion is disposed so as to protect the outer periphery of the first joint portion, and can be subjected to external force from any part of the end portion of the substrate, thereby preventing the first joint portion from peeling off. be able to.

  Application Example 9 In the interference filter according to the application example, it is preferable that the second joint portion is provided at a part of the outer periphery of the contour line of the first joint portion.

According to this structure, the 2nd junction part is provided in a part of outer periphery of the outline of a 1st junction part.
In this way, the second joint can be formed in a portion where stress is applied particularly when an external force is applied, and the degree of freedom in design is improved.

  Application Example 10 In the interference filter according to the application example described above, the second joint portion is formed at least at a location including an intersection of the straight lines that surrounds the outline of the first joint portion with a straight line. It is desirable.

According to this structure, the 2nd junction part is formed in the place containing the intersection of the straight line which surrounds the outer side of the outline of a 1st junction part with a straight line at least. That is, the 2nd junction part is formed in the corner | angular part which encloses an outline with a straight line.
The portion including this intersection is a place where stress is concentrated when an external force is applied. By providing the second joint portion in this portion, this stress is relieved, and in particular, peeling of the first joint portion is suppressed. Can do.

  Application Example 11 In the interference filter according to the application example described above, it is preferable that a plasma polymerization film is formed at the bonding portion where the first substrate and the second substrate are bonded.

According to this configuration, the plasma polymerization film is formed at the joint portion that joins the first substrate and the second substrate.
By using a plasma polymerized film for the joint, the flatness of the joint can be ensured and good joint strength can be obtained.

  Application Example 12 In the interference filter according to the application example described above, the interference filter includes a first electrode formed on the first substrate, and a second electrode facing the first electrode on the second substrate, and the second electrode. It is desirable that the substrate has a movable portion provided with the second reflective film and a thin portion formed around the movable portion so as to be thinner than the movable portion.

According to this configuration, the first substrate and the second substrate are each provided with the first electrode and the second electrode, and the second substrate is provided with the movable portion having the second reflective film and the thin portion around the movable portion. Yes.
In this structure, by applying a voltage between the first electrode and the second electrode, an electrostatic force acts between them, and the movable part can be displaced. The gap between the first reflective film and the second reflective film can be changed by this displacement, and an interference filter (wavelength variable interference filter) that makes the gap between the reflective films variable can be configured.
Also in such an interference filter, the bonding strength between the first substrate and the second substrate is maintained at the bonding portion, and the spectral accuracy of the interference filter due to peeling of the bonding portion can be prevented.

  Application Example 13 An optical module according to this application example includes a first substrate, a second substrate facing the first substrate, a first reflective film and a second reflective film facing each other with a gap therebetween, A light receiving portion that receives light transmitted through the first reflection film or the second reflection film, and the first substrate and the second substrate are bonded together by a bonding portion, and the first substrate or the second substrate In a plan view in the plate thickness direction of the substrate, the contour line in the joint portion does not include an intersection where an extended line extending from a straight line intersects, and has a shape in which the straight lines are connected by a curve.

According to this configuration, the outline of the joint that joins the first substrate and the second substrate does not include the intersection where the extended line extended from the straight line intersects, and has a shape in which the straight lines are connected by a curve. That is, it is a shape in which the two straight lines are connected by a curve without having a corner portion.
In this application example, the contour line of the joint has a shape where the straight line and the straight line intersect with each other without a corner, and there is no part where stress is concentrated extremely. Peeling at the joint can be suppressed.
Therefore, in the optical module of this application example, the bonding strength between the first substrate and the second substrate is maintained at the bonding portion, and it is possible to prevent a decrease in spectral accuracy of the optical module due to peeling of the bonding portion. it can.

  Application Example 14 An optical module according to this application example includes a first substrate, a second substrate facing the first substrate, a first reflective film and a second reflective film facing each other with a gap therebetween, A light receiving portion that receives light transmitted through the first reflective film or the second reflective film, and the first substrate and the second substrate are joined by a joint portion, and the joint portion is In plan view of the substrate or the second substrate in the plate thickness direction, the first joint formed on the outside of the first reflective film and the second reflective film, and the outside of the outline of the first joint It has the 2nd junction part formed at intervals with the 1st junction part, It is characterized by the above-mentioned.

According to this structure, the 2nd junction part is provided in the outer side of the 1st junction part which joins a 1st board | substrate and a 2nd board | substrate at intervals.
In this structure, even if a large external force is applied to the end portion of the first substrate or the second substrate, the force first acts on the second bonding portion, and the external force is not directly applied to the first bonding portion. In addition, since there is a gap between the second joint and the first joint, there is an effect of relieving the stress applied to the second joint by this gap, and peeling at the first joint and the second joint is prevented. Can be suppressed.
As described above, in the optical module according to this application example, the bonding strength between the first substrate and the second substrate is maintained at the first bonding portion, and the degradation of the spectral accuracy of the optical module due to the peeling of the bonding portion is prevented. be able to.

  Application Example 15 An electronic apparatus according to this application example includes a first substrate, a second substrate facing the first substrate, a first reflective film and a second reflective film facing each other with a gap therebetween, A light receiving unit that receives light transmitted through the first reflective film or the second reflective film, and an analysis processing unit that analyzes the characteristics of the light based on the light received by the light receiving unit, The first substrate and the second substrate are bonded to each other by a bonding portion, and in the plan view in the thickness direction of the first substrate or the second substrate, a contour line at the bonding portion is an extended line extended from a straight line. The crossing point is not included, and the straight line is connected by a curve.

According to this configuration, the outline of the joint that joins the first substrate and the second substrate does not include the intersection where the extended line extended from the straight line intersects, and has a shape in which the straight lines are connected by a curve. That is, it is a shape in which the two straight lines are connected by a curve without having a corner portion.
In this application example, the contour line of the joint has a shape where the straight line and the straight line intersect with each other without a corner, and there is no part where stress is concentrated extremely. Peeling at the joint can be suppressed.
For this reason, in the electronic device of this application example, the bonding strength between the first substrate and the second substrate is maintained at the bonding portion, and it is possible to prevent a decrease in spectral accuracy of the electronic device due to peeling of the bonding portion. it can.

  [Application Example 16] An electronic apparatus according to this application example includes a first substrate, a second substrate facing the first substrate, a first reflection film and a second reflection film facing each other with a gap therebetween, A light receiving unit that receives light transmitted through the first reflective film or the second reflective film, and an analysis processing unit that analyzes the characteristics of the light based on the light received by the light receiving unit, The first substrate and the second substrate are bonded to each other by a bonding portion, and the bonding portion has the first reflection film and the second reflection in a plan view in the thickness direction of the first substrate or the second substrate. It has the 1st junction part formed in the outer side of a film, and the 2nd junction part formed in the outside of the outline of the 1st junction part at intervals with the 1st junction part, It is characterized by the above-mentioned. .

According to this structure, the 2nd junction part is provided in the outer side of the 1st junction part which joins a 1st board | substrate and a 2nd board | substrate at intervals.
In this structure, even if a large external force is applied to the end portion of the first substrate or the second substrate, the force first acts on the second bonding portion, and the external force is not directly applied to the first bonding portion. In addition, since there is a gap between the second joint and the first joint, there is an effect of relieving the stress applied to the second joint by this gap, and peeling at the first joint and the second joint is prevented. Can be suppressed.
As described above, in the electronic device according to this application example, the bonding strength between the first substrate and the second substrate is maintained at the first bonding portion, and the deterioration of the spectral accuracy of the electronic device due to the peeling of the bonding portion is prevented. be able to.

The schematic plan view which shows the structure of the etalon of 1st Embodiment. FIG. 2 is a schematic cross-sectional view showing the configuration of the etalon of the first embodiment. Process drawing which shows the manufacturing process of the etalon of 1st Embodiment (manufacturing process of a 1st board | substrate). Process drawing which shows the manufacturing process of the etalon of 1st Embodiment (manufacturing process of a 1st board | substrate). Process drawing which shows the manufacturing process of the etalon of 1st Embodiment (manufacturing process of a 2nd board | substrate). Process drawing which shows the manufacturing process of the etalon of 1st Embodiment (manufacturing process of a 2nd board | substrate). Process drawing (joining and cutting process) which shows the manufacturing process of the etalon of 1st Embodiment. Explanatory drawing which shows the outline of the junction part in the modification of 1st Embodiment. The schematic plan view which shows the structure of the etalon of 2nd Embodiment. The schematic sectional drawing which shows the structure of the etalon of 2nd Embodiment. Process drawing which shows the manufacturing process of the etalon of 2nd Embodiment (manufacturing process of a 1st board | substrate). Process drawing which shows the manufacturing process of the etalon of 2nd Embodiment (manufacturing process of a 1st board | substrate). Process drawing (joining and cutting process) which shows the manufacturing process of the etalon of 2nd Embodiment. The schematic plan view which shows the modification of 2nd Embodiment. The schematic plan view which shows the other modification of 2nd Embodiment. The schematic plan view which shows the other modification of 2nd Embodiment. Explanatory drawing which shows the shape of the 2nd junction part in the other modification of 2nd Embodiment. The block diagram which shows the structure of the color measurement apparatus as an electronic device in 3rd Embodiment. Sectional drawing which shows the structure of the gas detection apparatus as an electronic device in 4th Embodiment. The circuit block diagram of the gas detection apparatus in 4th Embodiment. The block diagram which shows the structure of the food analyzer as an electronic device in 5th Embodiment. The perspective view which shows the structure of the spectroscopic camera as an electronic device in 6th Embodiment.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. In the drawings used for the following description, the ratio of dimensions of each member is appropriately changed so that each member has a recognizable size.
[First Embodiment]

FIG. 1 is a schematic plan view showing the configuration of an etalon (wavelength variable interference filter) of this embodiment, and FIG. 2 is a schematic cross-sectional view taken along the line AA in FIG.
(Configuration of Etalon 5)
As shown in FIGS. 1 and 2, the etalon 5 is a plate-like optical member that is rectangular in plan view, and includes a first substrate (fixed substrate) 10 and a second substrate (movable substrate) 20.
The first substrate 10 and the second substrate 20 are each made of, for example, various glasses such as quartz glass, soda glass, crystalline glass, lead glass, potassium glass, borosilicate glass, and alkali-free glass, and base materials such as quartz. And is formed by etching a plate-like base material.
The etalon 5 is integrally formed by joining the first substrate 10 and the second substrate 20. This bonding is fixed by bonding bonding films 17 and 27 provided on the first substrate 10 and the second substrate 20. As the bonding films 17 and 27, plasma polymerized films mainly composed of polyorganosiloxane are employed. The plasma polymerization film is formed with a film thickness of 10 nm to 100 nm.

The first substrate 10 is formed by etching a base material having a thickness of, for example, 500 μm. The first substrate 10 is provided with a first recess 12 by etching, and the central portion at the bottom of the first recess 12 has a shape protruding in a columnar shape from the periphery thereof.
In addition, a support portion 13 that supports the second substrate 20 in bonding with the second substrate 20 is provided at the outer edge of the first recess 12.

An insulating film 14 such as a SiO ₂ film is formed at the center of the first recess 12, and a first reflective film 16 is formed thereon. The first reflective film 16 includes a dielectric film 16a having a high refractive index such as TiO ₂ or Ta ₂ O ₅ and a metal film 16b such as an Ag alloy or an Al alloy. In the first reflective film 16, a dielectric film 16a is formed on the insulating film 14, and a metal film 16b is formed on the dielectric film 16a.
The first reflective film 16 may be formed of a single layer of a metal such as pure Ag or a metal alloy containing a metal such as Ag as a main component without using the dielectric film 16a.

The first electrode 15 is formed in an annular shape so as to surround the first reflective film 16 in plan view. The first electrode 15 is connected to a connection pad 15b formed at one of the four corners of the first substrate 10 via the lead electrode 15a.
The first electrode 15, the extraction electrode 15a, and the connection pad 15b are conductive films, for example, an ITO (Indium Tin Oxide) film. These conductive films may be Cr / Au films having a Cr film as a base and an Au film laminated thereon.

On the first electrode 15, an insulating film 14 formed below the first reflective film 16 is extended and covered. Further, the insulating film 14 is formed to extend to the upper surface of the support portion 13.
A bonding film 17 is formed on the insulating film 14 of the support portion 13.

The second substrate 20 is formed by using a rectangular plate-like base material, for example, by processing one surface of a base material having a thickness of 200 μm by etching.
The second substrate 20 has a diaphragm 23 composed of a columnar movable portion 23a centering on the center of the substrate and a thin portion 23b holding the movable portion 23a around it.
The thin-walled portion 23b is formed such that an annular second concave portion 22 is formed on the surface opposite to the surface facing the first substrate 10, and is thinner than the movable portion 23a.
Thus, the second substrate 20 has a diaphragm structure, and the movable portion 23a is configured to easily move in the thickness direction of the second substrate 20.

On the surface of the second substrate 20 facing the first substrate 10, a second reflective film 26, a second electrode 25, an extraction electrode 25a, and a connection pad 25b are formed.
Similar to the first reflective film 16, the second reflective film 26 includes a dielectric film 26a having a refractive index such as TiO ₂ or Ta ₂ O ₅ and a metal film 26b such as an Ag alloy or an Al alloy. . In the second reflective film 26, a dielectric film 26a is formed on the second substrate 20, and a metal film 26b is formed on the dielectric film 26a.
The second reflective film 26 may be formed of a single layer of a metal such as pure Ag or a metal alloy mainly composed of a metal such as Ag without using a dielectric film.

The second electrode 25 is provided in the thin portion 23 b facing the first electrode 15. The second electrode 25 is formed in an annular shape so as to surround the second reflective film 26.
The second electrode 25 is connected to a connection pad 25b formed at one of the four corners of the second substrate 20 via the lead electrode 25a. The connection pad 25b is arranged to be diagonal to the connection pad 15b of the first substrate 10 described above.
The second electrode 25, the extraction electrode 25a, and the connection pad 25b are conductive films, for example, an ITO film. These conductive films may be Cr / Au films having a Cr film as a base and an Au film laminated thereon.

A bonding film 27 is formed on the second substrate 20 at a position corresponding to the bonding film 17 formed on the first substrate 10.
A bonding portion 45 between the first substrate 10 and the second substrate 20 by the bonding films 17 and 27 is divided and bonded to two places as shown in FIG. A groove (not shown) is formed between the two bonding portions 45, and the extraction electrodes 15a and 25a can be arranged in the groove.
In a plan view of the first substrate 10 or the second substrate 20 in the plate thickness direction, the contour line L1 of the joint 45 does not include an intersection where an extended line extending from the straight line intersects, and a shape in which the straight lines are connected by a curve. It is. That is, the portion where the straight line intersects has a shape in which the straight line is connected by an arc having a radius r without having a corner. The radius r is preferably about 10 μm or more. The bonding area of the bonding portion 45 is set from the required bonding strength in consideration of the external force applied to both substrates.

  In a state where the first substrate 10 and the second substrate 20 are bonded, the first reflective film 16 and the second reflective film 26, and the first electrode 15 and the second electrode 25 are arranged to face each other with a gap. . The first electrode 15 and the second electrode 25 constitute an electrostatic actuator 40, and the gap dimension between the first reflective film 16 and the second reflective film 26 is adjusted.

  In the etalon 5 described above, when the electrostatic actuator 40 is driven in order to change the gap dimension between the first reflective film 16 and the second reflective film 26 facing each other, the first electrode 15 and the second electrode 25 are caused by electrostatic force. Are attracted, the thin portion 23b of the second substrate 20 is bent, and the movable portion 23a is displaced so as to approach the first substrate 10. The movable portion 23 a is provided with a second reflective film 26, and the gap between the first reflective film 16 and the second reflective film 26 can be adjusted.

The etalon 5 is formed such that the distance between the first electrode 15 and the second electrode 25 is larger than the distance between the first reflective film 16 and the second reflective film 26. For example, in an initial state where no voltage is applied between the first electrode 15 and the second electrode 25, the distance between the first electrode 15 and the second electrode 25 is, for example, 1 μm, and the first reflective film 16 and the second reflective film 26 The distance (gap size) is set to 0.5 μm, for example. For this reason, it is the structure which suppresses the pull-in phenomenon in which the force pulled rapidly increases when the gap dimension between the 1st electrode 15 and the 2nd electrode 25 becomes very small.
In the etalon 5 of the present embodiment, the movable portion 23a that is a part of the second substrate 20 is configured to be displaceable with respect to the first substrate 10, but the entire second substrate 20 is relative to the first substrate 10. It is good also as a structure which can be displaced.

(Method for producing etalon 5)
Next, a method for producing the etalon will be described.
<Manufacturing process of first substrate 10>
3 and 4 are process diagrams showing a manufacturing process of the first substrate, and are represented by a schematic sectional view similar to FIG.
Both surfaces of a substrate such as quartz glass are mirror-polished to produce a first substrate 11 having a thickness of 500 μm. And a resist is apply | coated to one surface of the 1st base material 11, and the resist patterning for making a 1st recessed part is performed.
Next, as shown in FIG. 3A, the central portion of the first base material 11 is etched using a hydrofluoric acid aqueous solution. Etching is performed to a depth of 0.5 μm to form the recess 12 a in the first base material 11.
And a resist is apply | coated to the surface in which the recessed part 12a of the 1st base material 11 was formed, and the resist pattern for making the part which forms a 1st electrode is patterned.
Subsequently, as shown in FIG. 3B, the first substrate 11 is etched to a depth of 1 μm using a hydrofluoric acid aqueous solution, and the first reflection and the portion forming the first electrode in the first recess 12. Separate the part that forms the film. Further, the support portion 13 is formed in the same manner as the formation of the first recess 12.

Next, an electrode forming film is formed on the entire surface of the first base material 11 where the first recess 12 is formed. The electrode forming film is composed of an ITO film, and is formed to a thickness of 100 nm by a sputtering method.
Then, a resist is applied on the electrode formation film, and resist patterning of the first electrode, the lead electrode, and the connection pad is performed. Thereafter, the electrode forming film formed of the ITO film is etched from the resist opening with an acidic solution.
Then, the resist is removed to form the first electrode 15, the lead electrode 15a (not shown), and the connection pad 15b in the first recess 12 as shown in FIG.

Subsequently, as illustrated in FIG. 3D, an insulating film 14 is formed from the first recess 12 to the upper surface of the support portion 13. The insulating film 14 is formed of a SiO ₂ film or the like, and is formed to a thickness of 100 nm by a sputtering method or a CVD (Chemical Vapor Deposition) method.

Next, a resist is applied on the insulating film 14, and resist patterning is performed so that the shape of the first reflective film is open. Thereafter, a high refractive index dielectric material such as TiO ₂ or Ta ₂ O ₅ is formed by sputtering or vapor deposition. This dielectric material is deposited to a thickness of 50 nm.
Then, by removing the resist, a dielectric film 16a is formed on the insulating film 14 as shown in FIG.

Subsequently, a highly reflective metal material such as an Ag alloy or an Al alloy is formed on the surface on which the dielectric film 16a is formed by a sputtering method or an evaporation method. The metal film made of this metal material is formed to a thickness of 50 nm.
Next, a resist is applied on the metal film, and resist patterning that leaves the shape of the first reflective film is performed. Then, the metal film 16b can be formed on the dielectric film 16a by etching the metal film with an acidic solution such as an aqueous solution of phosphoric acid nitrate and then stripping the resist, as shown in FIG. 4B.

Next, as illustrated in FIG. 4C, a bonding film 17 is formed on the insulating film 14 formed on the upper surface of the support portion 13. The bonding film 17 is formed by a CVD method using a metal mask, and a plasma polymerization film using polyorganosiloxane as a main material is employed. The thickness of the plasma polymerization film is set to 50 nm.
Thus, the 1st board | substrate 10 is manufactured through said process.

<Manufacturing process of second substrate 20>
5 and 6 are process diagrams showing the manufacturing process of the second substrate.
First, both surfaces of a substrate such as quartz glass are mirror-polished to produce a second substrate 21 having a thickness of 200 μm.
Next, as shown in FIG. 5A, an etching resistant film 50 made of a 50 nm thick Cr film and a 500 nm thick Au film are formed on both surfaces of the second substrate 21.

Subsequently, a resist is applied to both surfaces of the second base material 21. Then, resist patterning for forming a thin portion of the diaphragm on one surface of the second base material 21 is performed. The resist pattern has a shape in which a portion of the resist that forms the thin portion is opened.
Next, the Au film is etched with a mixed solution of iodine and potassium iodide, the Cr film is etched with an aqueous cerium ammonium nitrate solution, and the etching resistant film 50 is patterned. Thereafter, the resist is peeled off, and an etching mask 51 is formed on the surface of the second substrate 21 as shown in FIG.

Then, as shown in FIG.5 (c), the 2nd base material 21 is etched using hydrofluoric acid aqueous solution. Etching is performed to a depth of 170 μm to form the second recess 22. The thickness of the second base material 21 in the second recess 22 is about 30 μm.
Then, the etching masks 51 on both surfaces of the second base material 21 are peeled off, and as shown in FIG. 5D, the diaphragm 23 composed of the movable portion 23a and the thin portion 23b that is the bottom surface of the second recess 22 is formed. Form.
The etching mask 51 is removed by etching the Au film with a mixed solution of iodine and potassium iodide, and etching the Cr film with a cerium ammonium nitrate aqueous solution.

Next, an electrode forming film is formed on the surface opposite to the surface on which the second recess 22 is formed. The electrode forming film is composed of an ITO film, and is formed to a thickness of 100 nm by a sputtering method.
A resist is applied on the electrode formation film, and resist patterning of the second electrode, the lead electrode, and the connection pad is performed. Thereafter, the electrode forming film formed of the ITO film is etched from the opening of the resist with a mixed solution of nitric acid and hydrochloric acid.
Then, the resist is peeled off to form the second electrode 25, the extraction electrode 25a (not shown), and the connection pad 25b on the second base material 21, as shown in FIG.

Next, a resist is applied to the surface of the second base material 21 on which the second electrode 25 is formed, and resist patterning is performed so that the shape of the second reflective film is open. Thereafter, a high refractive index dielectric material such as TiO ₂ or Ta ₂ O ₅ is formed by sputtering or vapor deposition. This dielectric material is deposited to a thickness of 50 nm.
Then, by removing the resist, a dielectric film 26a is formed on the insulating film 14 as shown in FIG.

Subsequently, a highly reflective metal material such as an Ag alloy or an Al alloy is formed on the surface on which the dielectric film 26a is formed by a sputtering method or an evaporation method. The metal film made of this metal material is formed to a thickness of 50 nm.
Next, a resist is applied on the metal film, and resist patterning that leaves the shape of the second reflective film is performed. Then, the metal film 26b can be formed on the dielectric film 26a as shown in FIG. 6C by etching the metal film with an acidic solution such as a phosphoric acid nitrate acetic acid solution and then removing the resist.

Next, as illustrated in FIG. 6D, a bonding film 27 is formed on the portion of the second base material 21 corresponding to the support portion 13 of the first substrate 10 described above. The bonding film 27 is formed by a CVD method using a metal mask, and a plasma polymerization film using polyorganosiloxane as a main material is employed. The thickness of the plasma polymerization film is set to 50 nm.
Thus, the 2nd board | substrate 20 is manufactured through said process.

<Jointing step and cutting step>
FIG. 7 is a process diagram showing a bonding process of the first substrate and the second substrate.
In the step of bonding the first substrate 10 and the second substrate 20 obtained by the above manufacturing process, first, an activation process is performed to give activation energy to the bonding films 17 and 27. O ₂ plasma processing, UV processing, etc. are performed as activation processing. In addition, when performing an activation process, a reflective film can be protected by using the metal mask which covers the 1st reflective film 16 and the 2nd reflective film 26. FIG.
As shown in FIG. 7A, after the activation process is performed on the bonding films 17 and 27, the first substrate 10 and the second substrate 20 are aligned, and the first substrate 10 and the second substrate 20 are overlaid and loaded. And the second substrate 20 are joined.
Then, as shown in FIG. 7B, the end portion of the second substrate 20 positioned above the connection pad 15b is cut or scribed and subjected to a breaking process so that the connection pad 15b is exposed. Similarly, the connection pad 25b is subjected to cutting or scribing and breaking processing on the end of the first substrate 10 so that the connection pad 25b is exposed.
Thus, the etalon 5 is manufactured through the above manufacturing process.

As described above, in the etalon 5 as the interference filter of the present embodiment, the contour line L1 of the joint portion 45 that joins the first substrate 10 and the second substrate 20 does not include the intersection point where the extended line extended from the straight line intersects. It is a shape that connects straight lines with curved lines. That is, the portion where the straight lines intersect is a shape in which the straight lines are connected by an arc without having corners.
As described above, the contour line L1 of the joint portion 45 does not have a corner portion where stress is likely to concentrate, and thus, for example, in the cutting process of the first substrate 10 and the second substrate 20 in the manufacturing process of the etalon 5 described above. Even if an external force is applied to the joint 45, the joint 45 is not peeled off. This is considered that the stress applied to the joint portion 45 acts equally on the arc portion, the applied stress becomes uniform, and peeling at the joint portion 45 can be suppressed. In addition to the manufacturing process of the etalon 5, an external force may be applied to the joint in handling the etalon 5. In this case as well, peeling of the joint 45 can be similarly suppressed.
Therefore, in the etalon 5 of the present embodiment, the bonding strength between the first substrate 10 and the second substrate 20 is maintained at the bonding portion 45, and the spectral accuracy of the etalon 5 due to peeling of the bonding portion 45 is reduced. Can be prevented.
In the present embodiment, the wavelength variable interference filter in which the gap between the reflection films is variable has been described as an example, but the same effect can be obtained even with an interference filter in which the gap between the reflection films is fixed.
(Modification of the first embodiment)

Next, a modification of the first embodiment will be described.
FIG. 8 is an explanatory diagram showing a part of the contour line of the joint in the modification of the first embodiment.
In this modification, only the outline of the joint 45 is different, and the other components are the same as those in the first embodiment.
FIG. 8A shows a shape in which the contour line L2 of the joint portion 45 does not include an intersection where the straight line and the straight line intersect, and connects the two straight lines with a curved line.
FIG. 8B shows a shape in which the contour line L3 of the joint portion 45 does not include an intersection where the straight line and the straight line intersect, and the straight lines are connected by a plurality of arcs.

In the present modification, the portion where the straight line and the straight line intersect does not have a corner as in the first embodiment. For this reason, there is no portion where stress is extremely concentrated, and peeling at the joint can be suppressed. Thus, in the outline of a junction part, the shape which connected the part where a straight line and a straight line crossed with a curve, or the shape connected with a plurality of circular arcs may be sufficient.
[Second Embodiment]

Next, the etalon in the second embodiment will be described.
In the present embodiment, the structure of the joint for joining the first substrate and the second substrate is different from that of the first embodiment. Specifically, the second substrate has the same configuration as that of the first embodiment, and only the configuration of the first substrate is different. For this reason, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted or simplified.

FIG. 9 is a schematic plan view showing the configuration of the etalon (wavelength variable interference filter) of this embodiment, and FIG. 10 is a schematic cross-sectional view taken along the line BB in FIG.
(Configuration of etalon 6)
As shown in FIGS. 9 and 10, the etalon 6 includes a first substrate (fixed substrate) 30 and a second substrate (movable substrate) 20.
The first substrate 30 and the second substrate 20 are, for example, various glasses such as quartz glass, soda glass, crystalline glass, lead glass, potassium glass, borosilicate glass, and alkali-free glass, and base materials such as quartz. And is formed by etching a plate-like base material.
The etalon 6 is integrally formed by joining the first substrate 30 and the second substrate 20. This bonding is fixed by bonding bonding films 37 and 27 provided on the first substrate 30 and the second substrate 20. As the bonding films 37 and 27, plasma polymerized films using polyorganosiloxane as a main material are employed. The plasma polymerization film is formed with a film thickness of 10 nm to 100 nm.

The first substrate 30 is formed by etching a base material having a thickness of, for example, 500 μm. The first substrate 30 is provided with a first recess 32 by etching, and the central portion at the bottom of the first recess 32 has a shape protruding in a columnar shape from the periphery thereof.
In addition, a support portion 33 that supports the second substrate 20 in the bonding with the second substrate 20 is provided. The support portion 33 includes a first support portion 33 a and a second support portion 33 b, and a groove portion 38 is formed in the thickness direction of the first substrate 30 between them.
The first support portion 33a is provided on the outer edge of the first recess 32, and the second support portion 33b is provided along the first support portion 33a with the groove portion 38 interposed therebetween.

An insulating film 34 such as a SiO ₂ film is formed at the center of the first recess 32, and a first reflective film 36 is formed thereon. The first reflective film 36 includes a dielectric film 36a having a high refractive index such as TiO ₂ or Ta ₂ O ₅ and a metal film 36b such as an Ag alloy or an Al alloy. In the first reflective film 36, a dielectric film 36a is formed on the insulating film 34, and a metal film 36b is formed on the dielectric film 36a.
The first reflective film 36 may be formed of a single layer of a metal such as pure Ag or a metal alloy mainly composed of a metal such as Ag without using a dielectric film.

The first electrode 35 is formed in an annular shape so as to surround the first reflective film 36 in plan view. The first electrode 35 is connected to a connection pad 35b formed at one of the four corners of the first substrate 30 via the lead electrode 35a.
The first electrode 35, the extraction electrode 35a, and the connection pad 35b are conductive films, for example, an ITO (Indium Tin Oxide) film. These conductive films may be Cr / Au films having a Cr film as a base and an Au film laminated thereon.

  On the first electrode 35, an insulating film 34 formed below the first reflective film 36 is extended and covered. Furthermore, the insulating film 34 is formed to extend to the upper surface of the support portion 33 and the groove portion 38. A bonding film 37 is formed on the insulating film 34 on the top surfaces of the first support part 33a and the second support part 33b.

The second substrate 20 is the same as that described in the first embodiment.
A bonding film 27 is formed on the second substrate 20 at a position corresponding to the bonding film 37 formed on the first substrate 30.
The first substrate 30 and the second substrate 20 are bonded by the first bonding portion 41 and the second bonding portion 42.

As shown in FIG. 9, the first joint portion 41 includes a part of the outer edge portion of the thin portion 23 b of the diaphragm 23 and is formed in two portions. A groove portion (not shown) is formed between the two first joint portions 41, and the extraction electrodes 35a and 25a can be arranged in the groove portion.
In the plan view of the first substrate 30 or the second substrate 20 in the plate thickness direction, the contour line L4 of the first joint portion 41 has an arc between the straight lines without a corner portion where the straight line and the straight line intersect. It has a shape connected by.

Furthermore, the 2nd junction part 42 is continuously formed at intervals with the 1st junction part 41 along the outer periphery of the outline L4 of the 1st junction part 41. As shown in FIG. The second joint portion 42 has a corner at a portion where the straight lines in the contour line of the second joint portion 42 intersect.
Further, the area where the second bonding portion 42 is bonded is smaller than the area where the first bonding portion 41 is bonded. The bonding area bonded by the first bonding portion 41 is set so that sufficient strength can be obtained from the required bonding strength in consideration of the external force applied to the first substrate 30 and the second substrate 20. For this reason, the bonding area of the second bonding portion 42 may be smaller than that of the first bonding portion 41. For this reason, even if the 2nd junction part 42 is provided, it is not necessary to enlarge the size of the etalon 6.

  In a state where the first substrate 30 and the second substrate 20 are joined, the first reflective film 36 and the second reflective film 26, and the first electrode 35 and the second electrode 25 are disposed to face each other via a gap. . The first electrode 35 and the second electrode 25 constitute an electrostatic actuator 40, and the gap dimension between the first reflective film 36 and the second reflective film 26 is adjusted.

In the etalon 6 described above, when the electrostatic actuator 40 is driven in order to change the gap dimension between the first reflective film 36 and the second reflective film 26 facing each other, the first electrode 35 and the second electrode 25 are caused by electrostatic force. Are attracted, the thin portion 23 b of the second substrate 20 is bent, and the movable portion 23 a is displaced so as to approach the first substrate 30. The movable part 23a is provided with a second reflective film 26, and the gap between the first reflective film 36 and the second reflective film 26 can be adjusted.
Note that the etalon 6 of the present embodiment can be implemented without forming the groove 38.

(Method for producing etalon 6)
Next, a method for producing the etalon will be described. Here, the second substrate 20 has been described in the first embodiment, and a description thereof will be omitted.
<Manufacturing process of first substrate 30>
FIG. 11 and FIG. 12 are process diagrams showing the manufacturing process of the first substrate, and are represented by a schematic sectional view similar to FIG.
Both surfaces of a substrate such as quartz glass are mirror-polished to produce a first substrate having a thickness of 500 μm. And a resist is apply | coated to one surface of the 1st base material 31, and the resist patterning for making a 1st recessed part is performed.
Next, as shown in FIG. 11A, the central portion of the first base material 31 is etched using a hydrofluoric acid aqueous solution. Etching is performed to a depth of 0.5 μm, and a recess 32 a is formed in the first base material 31.
And a resist is apply | coated to the surface in which the recessed part 32a of the 1st base material 31 was formed, and the resist pattern for making the part which forms a 1st electrode is patterned.
Subsequently, as shown in FIG. 11B, the first base material 31 is etched to a depth of 1 μm using a hydrofluoric acid aqueous solution, and the first reflection and the portion forming the first electrode in the first recess 32. Separate the part that forms the film. Further, the first support portion 33 a and the second support portion 33 b are formed by forming the groove portion 38 in the same manner as the formation of the first recess portion 32.

Next, an electrode forming film is formed on the entire surface of the first base material 31 where the first recesses 32 are formed. The electrode forming film is composed of an ITO film, and is formed to a thickness of 100 nm by a sputtering method.
Then, a resist is applied on the electrode formation film, and resist patterning of the first electrode, the lead electrode, and the connection pad is performed. Thereafter, the electrode forming film formed of the ITO film is etched from the resist opening with an acidic solution.
Then, the resist is removed to form the first electrode 35, the lead electrode 35a (not shown), and the connection pad 35b in the first recess 32 as shown in FIG. 11C.

Subsequently, as illustrated in FIG. 11D, an insulating film 34 is formed from the first recess 32 to the upper surface of the support portion 33. The insulating film 34 is formed of a SiO ₂ film or the like, and is formed to a film thickness of 100 nm by a sputtering method or a CVD (Chemical Vapor Deposition) method.

Next, a resist is applied on the insulating film 34, and resist patterning is performed so that the shape of the first reflective film is open. Thereafter, a high refractive index dielectric material such as TiO ₂ or Ta ₂ O ₅ is formed by sputtering or vapor deposition. This dielectric material is deposited to a thickness of 50 nm.
Then, by removing the resist, a dielectric film 36a is formed on the insulating film 34 as shown in FIG.

Subsequently, a highly reflective metal material such as an Ag alloy or an Al alloy is formed on the surface on which the dielectric film 36a is formed by a sputtering method or an evaporation method. The metal film made of this metal material is formed to a thickness of 50 nm.
Next, a resist is applied on the metal film, and resist patterning that leaves the shape of the first reflective film is performed. Then, the metal film 36b can be formed on the dielectric film 36a as shown in FIG. 12B by etching the metal film with an acidic solution such as a phosphoric acid nitrate acetic acid solution and then removing the resist.

Next, as illustrated in FIG. 12C, a bonding film 37 is formed on the insulating film 14 formed on the upper surface of the support portion 33. The bonding film 37 is formed by a CVD method using a metal mask, and a plasma polymerization film using polyorganosiloxane as a main material is employed. The thickness of the plasma polymerization film is set to 50 nm.
Thus, the 1st board | substrate 30 is manufactured through said process.

<Jointing step and cutting step>
FIG. 13 is a process diagram showing a bonding process of the first substrate and the second substrate.
In the step of bonding the first substrate 30 and the second substrate 20 obtained by the above manufacturing process, first, an activation process is performed to give activation energy to the bonding films 37 and 27. O ₂ plasma processing, UV processing, etc. are performed as activation processing. In addition, when performing an activation process, a reflective film can be protected by using the metal mask which covers the 1st reflective film 36 and the 2nd reflective film 26. FIG.
As shown in FIG. 13A, after the activation treatment is performed on the bonding films 37 and 27, the first substrate 30 and the second substrate 20 are aligned, and the first substrate 30 is overlaid by applying a load. And the second substrate 20 are joined.
And as shown in FIG.13 (b), the edge part of the 2nd board | substrate 20 located above the connection pad 35b is cut | disconnected or a scribe process and a breaking process are performed so that the connection pad 35b may be exposed. Similarly, the connection pad 25b is cut or scribed and subjected to a breaking process on the end of the first substrate 30 so that the connection pad 25b is exposed.
Thus, the etalon 6 is manufactured through the above manufacturing process.

As described above, the etalon 6 as the interference filter according to the present embodiment is provided with the second bonding portion 42 at an interval outside the first bonding portion 41 that bonds the first substrate 30 and the second substrate 20.
In this structure, an external force is applied to the joining portion 45 at the end portion of the first substrate 30 or the second substrate 20, for example, in the cutting step of the first substrate 30 and the second substrate 20 in the manufacturing process of the etalon 6 described above. Even if the force is applied, the force first acts on the second joint portion 42, and the external force is not directly applied to the first joint portion 41. Further, since there is a gap between the second joint portion 42 and the first joint portion 41, there is an effect of relieving stress applied to the second joint portion 42 with this gap, and the first joint portion 41 and the second joint portion are effective. The peeling at the portion 42 can be suppressed.
In addition to the manufacturing process of the etalon 6, an external force may be applied to the joint in handling the etalon 6. In this case as well, peeling of the first joint 41 and the second joint 42 is similarly suppressed. be able to.

Further, a groove portion 38 is provided between the first joint portion 41 and the second joint portion 42, and stress applied to the second joint portion 42 can be relieved by the groove portion 38, and the first joint portion 41 and the second joint portion 42 can be relieved. The peeling at the two joint portions 42 can be further suppressed.
As described above, in the etalon 6 of the present embodiment, the bonding strength between the first substrate 30 and the second substrate 20 is maintained at the first bonding portion 41, and the spectral accuracy of the etalon 6 is reduced due to peeling of the bonding portion. Can be prevented.
In addition, even if a part of the second joint part 42 is peeled off by an external force, the peeling does not proceed to the first joint part 41 formed with a space from the second joint part 42.
In the present embodiment, the wavelength variable interference filter in which the gap between the reflection films is variable has been described as an example, but the same effect can be obtained even with an interference filter in which the gap between the reflection films is fixed.
(Modification of the second embodiment)

Next, modifications of the second embodiment will be described with several examples. In this modification, the shape of the part equivalent to the 1st junction part demonstrated in 2nd Embodiment and a 2nd junction part differs. For this reason, about the structure other than a junction part, the same code | symbol as 2nd Embodiment is attached | subjected and description is abbreviate | omitted.
FIG. 14 is a schematic plan view showing a modification of the second embodiment.
In the etalon 7, the first substrate 30 and the second substrate 20 are bonded by the first bonding portion 41 a and the second bonding portion 42. Unlike the etalon 6 of the second embodiment shown in FIG. 9, the first joint portion 41 a has a corner at a portion where the straight lines in the contour line L5 of the first joint portion 41 a intersect. And the 2nd junction part 42 is formed along the outer periphery of the 1st junction part 41a at intervals with the 1st junction part 41a. This 2nd junction part 42 also has a corner | angular part in the part which a straight line cross | intersects.
Also in the etalon 7 having such a configuration, the same effect as that of the second embodiment can be obtained.

FIG. 15 is a schematic plan view showing another modification of the second embodiment.
In the etalon 8, the first substrate 30 and the second substrate 20 are bonded by the first bonding portion 41 and the second bonding portion 42a. Similarly to the etalon 6 of the second embodiment shown in FIG. 9, the first joint portion 41 has a corner at the intersection of the straight line and the straight line in the outline L6 of the first joint portion 41 in plan view. Instead, it has a shape in which straight lines are connected by arcs. And the 2nd junction part 42a is formed along the outer periphery of the 1st junction part 41 at intervals with the 1st junction part 41. As shown in FIG. The second joint portion 42a also has a shape in which the portion where the straight line and the straight line cross each other does not have a corner portion and is connected by a circular arc.
Thus, in both the 1st junction part 41 and the 2nd junction part 42a, since a junction part does not have a corner | angular part, even if external force is added to the 1st board | substrate 30 or the 2nd board | substrate 20, the place where stress concentrates And there is an effect that the joint is difficult to peel off.

FIG. 16 is a schematic plan view showing another modification of the second embodiment.
In the etalon 9, the first substrate 30 and the second substrate 20 are bonded by the first bonding portion 41 and the second bonding portions 43 and 44. Similarly to the etalon 6 of the second embodiment shown in FIG. 9, the first joint portion 41 has a corner portion at the intersection of the straight line and the straight line in the outline L7 of the first joint portion 41 in plan view. Instead, it has a shape in which straight lines are connected by arcs. A large number of second joint portions 43 and 44 are formed in an island shape along the outer periphery of the first joint portion 41 at intervals from the first joint portion 41.
The second joint portion 43 is provided at a location including a straight line intersection N that surrounds the outline L7 of the first joint portion 41 with a straight line. Moreover, you may provide the some 2nd junction part 44 in the place which does not contain this intersection N, for example, one side along the outline L7.
The second joint portions 43 and 44 are provided in a square shape in a plan view in FIG. 16, but may be rectangular, circular, or other shapes.
For example, as shown in FIG. 17, a shape along the arc of the contour line L <b> 8 of the first joint portion 41 may be provided at a location including a straight line intersection N that surrounds the contour line L <b> 8 of the first joint portion 41 with a straight line. good.
Thus, the 2nd junction parts 43 and 43a are formed in the place containing the intersection N of the straight line which surrounds the outside of the outline L8 of the 1st junction part 41 by a straight line in this way.
The portion including the intersection N is a place where stress is concentrated when an external force is applied. By providing the second joint portions 43 and 43a in this portion, the stress is relieved, and the first joint portion 41 and the first joint portion 41 are provided. 2 Peeling of the joint portions 43 and 43a can be suppressed.
[Third Embodiment]

Next, optical modules and electronic devices using the etalon described in the first and second embodiments will be described.
In the third embodiment, a color measurement device that measures the chromaticity of a measurement object will be described as an example.
FIG. 18 is a block diagram showing the configuration of the color measuring device.
The color measurement device 80 includes a light source device 82 that irradiates light to the inspection target A, a color measurement sensor 84 (optical module), and a control device 86 that controls the overall operation of the color measurement device 80.
The color measurement device 80 irradiates the inspection target A with light from the light source device 82, receives the inspection target light reflected from the inspection target A with the color measurement sensor 84, and outputs a detection signal output from the color measurement sensor 84. This is a device for analyzing and measuring the chromaticity of the inspection target light.

The light source device 82 includes a light source 91 and a plurality of lenses 92 (only one is shown in FIG. 18), and emits white light to the inspection target A. In addition, the plurality of lenses 92 may include a collimator lens. In this case, the light source device 82 converts the light emitted from the light source 91 into parallel light by the collimator lens, and performs inspection from a projection lens (not shown). Inject toward A.
In the present embodiment, the colorimetric device 80 including the light source device 82 is illustrated. However, for example, when the inspection target A is a light emitting member, the colorimetric device may be configured without providing the light source device 82.

The color measurement sensor 84 as an optical module includes an etalon (wavelength variable interference filter) 5, a voltage controller 94 that controls the voltage applied to the electrostatic actuator 40 and changes the wavelength of light transmitted through the etalon 5, and the etalon 5. And a light receiving unit 93 (detection unit) that receives the light transmitted through.
The colorimetric sensor 84 includes an optical lens (not shown) that guides the reflected light (inspection target light) reflected by the inspection target A to the etalon 5. The colorimetric sensor 84 splits the inspection target light incident on the optical lens into light of a predetermined wavelength band by the etalon 5, and the split light is received by the light receiving unit 93.
The light receiving unit 93 includes a photoelectric conversion element such as a photodiode as a detection unit, and generates an electrical signal corresponding to the amount of received light. The light receiving unit 93 is connected to the control device 86 and outputs the generated electrical signal to the control device 86 as a light reception signal.

  The voltage control unit 94 controls the voltage applied to the electrostatic actuator 40 based on the control signal input from the control device 86.

The control device 86 controls the overall operation of the color measuring device 80. As the control device 86, for example, a general-purpose personal computer, a portable information terminal, a color measurement dedicated computer, or the like can be used.
The control device 86 includes a light source control unit 95, a colorimetric sensor control unit 97, a colorimetric processing unit 96 (analysis processing unit), and the like.

The light source control unit 95 is connected to the light source device 82. Then, the light source control unit 95 outputs a predetermined control signal to the light source device 82 based on, for example, a user setting input, and causes the light source device 82 to emit white light with a predetermined brightness.
The colorimetric sensor control unit 97 is connected to the colorimetric sensor 84. Then, the colorimetric sensor control unit 97 sets the wavelength of light received by the colorimetric sensor 84 based on, for example, a user's setting input, and performs a colorimetric control signal indicating that the amount of light received at this wavelength is detected. Output to sensor 84. Thus, the voltage control unit 94 of the colorimetric sensor 84 sets the voltage applied to the electrostatic actuator 40 so as to transmit the wavelength of light desired by the user based on the control signal.

  The colorimetric processing unit 96 controls the colorimetric sensor control unit 97 to change the gap dimension between the reflective films of the etalon 5 to change the wavelength of the light transmitted through the etalon 5. In addition, the colorimetric processing unit 96 acquires the amount of light transmitted through the etalon 5 based on the light reception signal input from the light receiving unit 93. Then, the colorimetric processing unit 96 calculates the chromaticity of the light reflected from the inspection target A based on the received light amount of each wavelength obtained as described above.

As described above, the color measurement device 80 as the electronic apparatus and the color measurement sensor 84 as the optical module of the present embodiment can accurately set the gap dimension between the reflective films, and the etalon 5 having excellent spectral accuracy. Therefore, a highly accurate colorimetric sensor can be obtained.
As described above, in the third embodiment, the colorimetric device 80 is exemplified as the electronic device. However, the wavelength variable interference filter, the optical module, and the electronic device can be used in various other fields.
For example, it can be used as a light-based system for detecting the presence of a specific substance. As such a system, for example, a gas detection device such as a vehicle-mounted gas leak detector that detects a specific gas with high sensitivity by adopting a spectroscopic measurement method using an etalon, or a photoacoustic rare gas detector for a breath test Can be illustrated.
[Fourth Embodiment]

  Hereinafter, an example of the gas detection device will be described with reference to the drawings.

FIG. 19 is a cross-sectional view illustrating an example of a gas detection device including an etalon.
FIG. 20 is a block diagram illustrating a configuration of a control system of the gas detection device.
As shown in FIG. 19, the gas detection device 100 includes a sensor chip 110, a flow path 120 including a suction port 120A, a suction flow path 120B, a discharge flow path 120C, and a discharge port 120D, a main body 130, It is configured with.
The main body unit 130 includes a sensor unit cover 131 having an opening through which the flow channel 120 can be attached, a discharge unit 133, a housing 134, an optical unit 135, a filter 136, an etalon (wavelength variable interference filter) 5, and a light receiving element 137 (light receiving element). A control unit 138 that processes a detected signal and controls the detection unit, a power supply unit 139 that supplies power, and the like. The optical unit 135 emits light, and a beam splitter 135B that reflects light incident from the light source 135A toward the sensor chip 110 and transmits light incident from the sensor chip toward the light receiving element 137. And lenses 135C, 135D, and 135E.

As shown in FIG. 20, the gas detection apparatus 100 is provided with an operation panel 140, a display unit 141, a connection unit 142 for interface with the outside, and a power supply unit 139. When the power supply unit 139 is a secondary battery, a connection unit 143 for charging may be provided.
Further, the control unit 138 of the gas detection device 100 includes a signal processing unit 144 configured by a CPU or the like, a light source driver circuit 145 for controlling the light source 135A, a voltage control unit 146 for controlling the etalon 5, and a light receiving element 137. A light receiving circuit 147 that receives a signal from the sensor chip, reads a code of the sensor chip 110, controls a sensor chip detection circuit 149 that receives a signal from a sensor chip detector 148 that detects the presence or absence of the sensor chip 110, and a discharge means 133. A discharge driver circuit 150 is provided.

Next, operation | movement of the gas detection apparatus 100 is demonstrated below.
A sensor chip detector 148 is provided inside the sensor unit cover 131 at the upper part of the main body unit 130, and the sensor chip detector 148 detects the presence or absence of the sensor chip 110. When the signal processing unit 144 detects the detection signal from the sensor chip detector 148, the signal processing unit 144 determines that the sensor chip 110 is attached, and displays a display signal for displaying on the display unit 141 that the detection operation can be performed. put out.

  For example, when the operation panel 140 is operated by the user and an instruction signal to start the detection process is output from the operation panel 140 to the signal processing unit 144, the signal processing unit 144 first sends the signal processing unit 144 to the light source driver circuit 145. A light source activation signal is output to activate the light source 135A. When the light source 135A is driven, laser light having a single wavelength and stable linear polarization is emitted from the light source 135A. The light source 135 </ b> A includes a temperature sensor and a light amount sensor, and the information is output to the signal processing unit 144. When the signal processing unit 144 determines that the light source 135A is operating stably based on the temperature and light quantity input from the light source 135A, the signal processing unit 144 controls the discharge driver circuit 150 to operate the discharge unit 133. Thereby, the gas sample containing the target substance (gas molecule) to be detected is guided from the suction port 120A to the suction channel 120B, the sensor chip 110, the discharge channel 120C, and the discharge port 120D.

The sensor chip 110 is a sensor that incorporates a plurality of metal nanostructures and uses localized surface plasmon resonance. In such a sensor chip 110, an enhanced electric field is formed between the metal nanostructures by laser light, and when gas molecules enter the enhanced electric field, Raman scattered light and Rayleigh scattered light including information on molecular vibrations are generated. Occur.
These Rayleigh scattered light and Raman scattered light enter the filter 136 through the optical unit 135, and the Rayleigh scattered light is separated by the filter 136, and the Raman scattered light enters the etalon 5. Then, the signal processing unit 144 controls the voltage control unit 146 to adjust the voltage applied to the etalon 5 and causes the etalon 5 to split the Raman scattered light corresponding to the gas molecule to be detected. Thereafter, when the dispersed light is received by the light receiving element 137, a light reception signal corresponding to the amount of received light is output to the signal processing unit 144 via the light receiving circuit 147.
The signal processing unit 144 compares the spectrum data of the Raman scattered light corresponding to the gas molecule to be detected obtained as described above and the data stored in the ROM, and determines whether or not the target gas molecule is the target gas molecule. To determine the substance. Further, the signal processing unit 144 displays the result information on the display unit 141 or outputs the result information from the connection unit 142 to the outside.

  19 and 20 exemplify the gas detection device 100 that performs gas detection from the Raman scattered light obtained by separating the Raman scattered light with the etalon 5. However, as the gas detection device, gas-specific absorbance is detected. By doing so, you may use as a gas detection device which specifies gas classification. In this case, a gas sensor that allows gas to flow into the sensor and detects light absorbed by the gas in the incident light is used as the optical module of the present invention. The gas detection device 100 that analyzes and discriminates the gas flowing into the sensor by such a gas sensor is an electronic apparatus of the present invention. Even in such a configuration, a gas component can be detected using the etalon of the present invention.

In addition, the system for detecting the presence of a specific substance is not limited to the detection of the gas as described above, and is a non-invasive measuring device for saccharides by near infrared spectroscopy and non-invasive information on food, living body, minerals, etc. A substance component analyzer such as a measuring device can be exemplified.
[Fifth Embodiment]

  Next, a food analyzer will be described as an example of the substance component analyzer.

FIG. 21 is a block diagram illustrating a configuration of a food analysis apparatus that is an example of an electronic apparatus using the etalon 5.
The food analyzer 200 includes a detector (optical module) 210, a control unit 220, and a display unit 230. The detector 210 detects a light source 211 that emits light, an imaging lens 212 into which light from a measurement object is introduced, an etalon 5 that splits light introduced from the imaging lens 212, and the dispersed light. An imaging unit (light receiving unit) 213.
Further, the control unit 220 controls the light source control unit 221 that controls the turning on / off of the light source 211 and the brightness at the time of lighting, the voltage control unit 222 that controls the etalon 5, and the imaging unit 213. A detection control unit 223 that acquires a spectral image captured by the unit 213, a signal processing unit 224, and a storage unit 225.

  In the food analyzer 200, when the apparatus is driven, the light source 211 is controlled by the light source control unit 221, and the measurement object is irradiated with light from the light source 211. Then, the light reflected by the measurement object enters the etalon 5 through the imaging lens 212. The etalon 5 is applied with a voltage capable of dispersing a desired wavelength under the control of the voltage control unit 222, and the dispersed light is imaged by an imaging unit 213 configured by, for example, a CCD camera or the like. The captured light is accumulated in the storage unit 225 as a spectral image. Further, the signal processing unit 224 controls the voltage control unit 222 to change the voltage value applied to the etalon 5, and acquires a spectral image for each wavelength.

Then, the signal processing unit 224 performs arithmetic processing on the data of each pixel in each image accumulated in the storage unit 225, and obtains a spectrum at each pixel. In addition, the storage unit 225 stores, for example, information related to food components with respect to the spectrum, and the signal processing unit 224 analyzes the obtained spectrum data based on the information related to food stored in the storage unit 225. The food component contained in the detection target and the content thereof are obtained. Moreover, a food calorie, a freshness, etc. are computable from the obtained food component and content. Furthermore, by analyzing the spectral distribution in the image, it is possible to extract a portion of the food to be inspected that has reduced freshness, and to detect foreign substances contained in the food. Can also be implemented.
Then, the signal processing unit 224 performs processing for causing the display unit 230 to display information such as the component and content of the obtained food to be inspected, calories, and freshness.

FIG. 21 shows an example of the food analysis apparatus 200, but it can also be used as a non-invasive measurement apparatus for other information as described above with a substantially similar configuration. For example, it can be used as a biological analyzer for analyzing biological components such as measurement and analysis of body fluid components such as blood. As such a bioanalytical device, for example, a device that detects ethyl alcohol as a device that measures body fluid components such as blood, it can be used as a drunk driving prevention device that detects the drinking state of an automobile driver. . Further, it can also be used as an electronic endoscope system provided with such a biological analyzer.
Furthermore, it can also be used as a mineral analyzer for performing component analysis of minerals.

Furthermore, the variable wavelength interference filter, the optical module, and the electronic apparatus of the present invention can be applied to the following apparatuses.
For example, it is possible to transmit data using light of each wavelength by changing the intensity of light of each wavelength over time. In this case, light of a specific wavelength is dispersed by an etalon provided in the optical module. By receiving light at the light receiving unit, data transmitted by light of a specific wavelength can be extracted, and light data of each wavelength is processed by an electronic device equipped with such an optical module for data extraction. Thus, optical communication can be performed.
[Sixth Embodiment]

Further, as other electronic devices, the present invention can also be applied to a spectroscopic camera, a spectroscopic analyzer, and the like that spectrally divide light with the etalon (wavelength variable interference filter) of the present invention to capture a spectroscopic image. An example of such a spectroscopic camera is an infrared camera incorporating an etalon.
FIG. 22 is a perspective view showing the configuration of the spectroscopic camera. As shown in FIG. 22, the spectroscopic camera 300 includes a camera body 310, an imaging lens unit 320, and an imaging unit 330.
The camera body 310 is a part that is gripped and operated by a user.
The imaging lens unit 320 is provided in the camera body 310 and guides incident image light to the imaging unit 330. The imaging lens unit 320 includes an objective lens 321, an imaging lens 322, and an etalon 5 provided between these lenses.
The imaging unit 330 includes a light receiving element, and images the image light guided by the imaging lens unit 320.
In such a spectroscopic camera 300, a spectral image of light having a desired wavelength can be captured by transmitting light having a wavelength to be imaged by the etalon 5.

Furthermore, the etalon of the present invention may be used as a bandpass filter. For example, among the light in a predetermined wavelength range emitted from the light emitting element, only light in a narrow band centered on a predetermined wavelength is spectrally transmitted. It can also be used as an optical laser device.
Further, the etalon of the present invention may be used as a biometric authentication device, and can also be applied to authentication devices such as blood vessels, fingerprints, retinas, and irises using light in the near infrared region and visible region.

  Furthermore, an optical module and an electronic device can be used as a concentration detection device. In this case, the infrared energy (infrared light) emitted from the substance is separated and analyzed by the etalon, and the analyte concentration in the sample is measured.

  As described above, the variable wavelength interference filter, the optical module, and the electronic apparatus of the present invention can be applied to any device that splits predetermined light from incident light. And since the etalon of this invention can disperse | distribute a some wavelength with one device as mentioned above, the measurement of the spectrum of a some wavelength and the detection with respect to a some component can be implemented accurately. Therefore, compared with the conventional apparatus which takes out a desired wavelength with several devices, size reduction of an optical module or an electronic device can be accelerated | stimulated, for example, it can use suitably for a portable use and a vehicle-mounted use.

  The present invention is not limited to the embodiment described above, and the specific structure and procedure for carrying out the present invention can be appropriately changed to other structures and the like as long as the object of the present invention can be achieved. it can. Many modifications can be made by those skilled in the art within the technical idea of the present invention.

  5, 6, 7, 8, 9 ... variable wavelength interference filter (etalon), 10 ... first substrate, 11 ... first base material, 12 ... first recess, 12a ... recess, 13 ... support, 14 ... insulating film 15 ... first electrode, 15a ... extraction electrode, 15b ... connection pad, 16 ... first reflection film, 16a ... dielectric film, 16b ... metal film, 17 ... bonding film, 20 ... second substrate, 21 ... second Substrate, 22 ... second recess, 23 ... diaphragm, 23a ... movable part, 23b ... thin part, 25 ... second electrode, 25a ... extraction electrode, 25b ... connection pad, 26 ... second reflection film, 26a ... dielectric Membrane, 26b ... Metal membrane, 27 ... Joint film, 30 ... First substrate, 31 ... First substrate, 32 ... First recess, 32a ... Recess, 33 ... Support portion, 33a ... First support portion, 33b ... First 2 support part, 34 ... insulating film, 35 ... first electrode, 35a ... extraction electrode, 35 ... Connection pad 36 ... First reflective film 36a ... Dielectric film 36b ... Metal film 37 ... Joint film 38 ... Groove part 40 ... Electrostatic actuator 41 ... First joint part 42 ... Second joint part , 43... 2nd joint including intersection, 43a... 2nd joint, 44... 2nd joint, 45 .. joint, 50 .. etching resistant film, 51. DESCRIPTION OF SYMBOLS 100 ... Gas detection apparatus as electronic equipment, 200 ... Food analysis apparatus as electronic equipment, 300 ... Spectral camera as electronic equipment, L1-L8 ... Contour line, N ... Intersection.

Claims (16)

A first substrate;
A second substrate facing the first substrate;
A first reflective film and a second reflective film facing each other through a gap,
The first substrate and the second substrate are bonded by a bonding portion,
In a plan view in the thickness direction of the first substrate or the second substrate,
The contour line in the joint portion does not include an intersection where an extended line extending from a straight line intersects, and has a shape in which the straight lines are connected by a curved line. The interference filter according to claim 1,
The contour line of the joint has a shape in which the straight lines are connected by an arc. The interference filter according to claim 1 or 2,
An interference filter, wherein a plasma polymerization film is formed at the joint where the first substrate and the second substrate are joined. The interference filter according to any one of claims 1 to 3,
A first electrode formed on the first substrate;
A second electrode facing the first electrode on the second substrate,
The interference filter, wherein the second substrate has a movable part provided with the second reflective film, and a thin part formed thinner around the movable part than the movable part. A first substrate;
A second substrate facing the first substrate;
A first reflective film and a second reflective film facing each other through a gap,
The first substrate and the second substrate are bonded by a bonding portion,
In the planar view in the plate thickness direction of the first substrate or the second substrate,
A first joint formed outside the first reflective film and the second reflective film, and a second joint formed outside the outline of the first joint and spaced from the first joint. And an interference filter. The interference filter according to claim 5,
An interference filter, wherein a groove for separating the first bonding portion and the second bonding portion is provided on either the first substrate or the second substrate. The interference filter according to claim 5 or 6,
The interference filter is characterized in that an area to be joined of the second joint is smaller than an area to be joined of the first joint. The interference filter according to any one of claims 5 to 7,
The said 2nd junction part is continuously provided along the outer periphery of the said outline of the said 1st junction part. The interference filter characterized by the above-mentioned. The interference filter according to any one of claims 5 to 7,
The said 2nd junction part is provided in a part of outer periphery of the said outline of the said 1st junction part. The interference filter characterized by the above-mentioned. The interference filter according to claim 9,
The interference filter, wherein the second joint is formed at a location including an intersection of the straight lines that surrounds the outline of the first joint with a straight line. The interference filter according to any one of claims 5 to 10,
An interference filter, wherein a plasma polymerization film is formed at the joint where the first substrate and the second substrate are joined. The interference filter according to any one of claims 5 to 11,
A first electrode formed on the first substrate;
A second electrode facing the first electrode on the second substrate,
The interference filter, wherein the second substrate has a movable part provided with the second reflective film, and a thin part formed thinner around the movable part than the movable part. A first substrate;
A second substrate facing the first substrate;
A first reflective film and a second reflective film facing each other through a gap;
A light receiving portion for receiving light transmitted through the first reflective film or the second reflective film,
The first substrate and the second substrate are bonded by a bonding portion,
In a plan view in the thickness direction of the first substrate or the second substrate,
The optical module according to claim 1, wherein the contour line at the joint does not include an intersection where an extended line extending from a straight line intersects, and has a shape in which the straight lines are connected by a curved line. A first substrate;
A second substrate facing the first substrate;
A first reflective film and a second reflective film facing each other through a gap;
A light receiving portion for receiving light transmitted through the first reflective film or the second reflective film,
The first substrate and the second substrate are bonded by a bonding portion,
In the planar view in the plate thickness direction of the first substrate or the second substrate,
A first joint formed outside the first reflective film and the second reflective film, and a second joint formed outside the outline of the first joint and spaced from the first joint. And an optical module. A first substrate;
A second substrate facing the first substrate;
A first reflective film and a second reflective film facing each other through a gap;
A light receiving unit that receives light transmitted through the first reflective film or the second reflective film;
An analysis processing unit that analyzes the characteristics of the light based on the light received by the light receiving unit,
The first substrate and the second substrate are bonded by a bonding portion,
In a plan view in the thickness direction of the first substrate or the second substrate,
The electronic device according to claim 1, wherein the contour line at the joint does not include an intersection where an extended line extending from a straight line intersects, and has a shape in which the straight lines are connected by a curved line. A first substrate;
A second substrate facing the first substrate;
A first reflective film and a second reflective film facing each other through a gap;
A light receiving unit that receives light transmitted through the first reflective film or the second reflective film;
An analysis processing unit that analyzes the characteristics of the light based on the light received by the light receiving unit,
The first substrate and the second substrate are bonded by a bonding portion,
In the planar view in the plate thickness direction of the first substrate or the second substrate,
A first joint formed outside the first reflective film and the second reflective film, and a second joint formed outside the outline of the first joint and spaced from the first joint. And an electronic device.

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